CN104900645B - Voltage surge protector part and its manufacturing method - Google Patents
Voltage surge protector part and its manufacturing method Download PDFInfo
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- CN104900645B CN104900645B CN201510282708.5A CN201510282708A CN104900645B CN 104900645 B CN104900645 B CN 104900645B CN 201510282708 A CN201510282708 A CN 201510282708A CN 104900645 B CN104900645 B CN 104900645B
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Abstract
The present invention discloses a kind of voltage surge protector part and its manufacturing method, comprising: the substrate of the first conduction type；First base area of the second conduction type, extends into substrate from the first surface of substrate；Second base area of second conduction type opposite with the first base area extends into substrate from the second surface opposite with first surface of substrate；First emitter region of multiple first conduction types, extends into the first base area from the first surface of substrate；Second emitter region of multiple first conduction types, extends into the second base area from the second surface of substrate, is staggered with the first emitter region, wherein the first conduction type is complementary with the second conduction type.Voltage surge protector part of the invention is capable of providing forward and reverse surge protection ability, and in some preferred embodiments, and the forward and reverse surge protection ability of voltage surge protector part of the invention is balanced, and aerial drainage speed is fast, small in size.
Description
Technical field
The present invention relates to a kind of technical field of semiconductors, in particular to a kind of voltage surge protector part and its manufacturer
Method.
Background technique
With the rapid development of electronic technology, the property for often thering is unexpected voltage transient and surge current to make machine system
It can decline, malfunction occur and even damage.Especially in communication system, the surges such as lightning stroke, mains fluctuations, electromagnetic induction
It can make a big impact to communication equipment and even destroy.
Semiconductor surge protection device has the superior function of accurate conducting, unlimited repetition and quick response, is other winks
Between over-voltage protector far from and.However, there is following deficiency in existing semiconductor surge protection device: only unidirectional
Even if surge protection ability has bidirectional protective ability but protection with right and opposite directions ability is unbalanced, protection response speed is slow etc..
Summary of the invention
The purpose of the present invention is to provide a kind of voltage surge protector part and its manufacturing methods, for solving above-mentioned technology
At least one of defect.
One aspect of the present invention provides a kind of voltage surge protector part, comprising:
The substrate of first conduction type；
First base area of the second conduction type, extends into substrate from the first surface of substrate；
Second base area of second conduction type opposite with the first base area, from second table opposite with first surface of substrate
Face extends into substrate；
First emitter region of multiple first conduction types, extends into the first base area from the first surface of substrate；
Second emitter region of multiple first conduction types, extends into the second base area from the second surface of substrate, with
One emitter region is staggered,
Wherein the first conduction type is complementary with the second conduction type.
In a specific embodiment, the size of multiple first emitter region and multiple second emitter region is identical, every two
Spacing between first emitter region is identical as the spacing between the second emitter region of every two.
In a specific embodiment, the device further include: the first annular area of the first conduction type, around the first base
Area；And/or first conduction type the second annulus, around the second base area.
In a specific embodiment, the spacing of first annular area and the first base area and the second annulus and the second base area
Spacing is identical.
In a specific embodiment, device further include: the first slab region of the first conduction type is formed in described
Between one annulus and the multiple first emitter region；And/or first conduction type the second slab region, be formed in described second
Between annulus and the multiple second emitter region.
In a specific embodiment, device further include: the first injection region of the second conduction type is prolonged from first surface
It extends into the first base area, and is oppositely arranged with first emitter region；And/or second conduction type the second injection region,
It extends into the second base area from second surface, and is oppositely arranged with second emitter region.
In a specific embodiment, the doping concentration of the first injection region is greater than the doping concentration of the first base area；And/or the
The doping concentration of two injection regions is greater than the doping concentration of the second base area.
In a specific embodiment, the first metal layer is formed on the first base area；And second metal layer, it is formed in
On second base area.
In a specific embodiment, substrate with a thickness of 150-190 microns.
In a specific embodiment, the first conduction type is N-type, and the second conduction type is p-type；Or first conductive-type
Type is p-type, and the second conduction type is N-type.
Another aspect of the present invention provides a kind of manufacturing method of voltage surge protector part, comprising:
Form the substrate of the first conduction type；Form the first base area of the second conduction type, the first base area from substrate
One surface extends into substrate；
Form the second base area of second conduction type opposite with the first base area, the second base area from substrate and first surface
Opposite second surface extends into substrate；
The first emitter region of multiple first conduction types is formed, the first emitter region extends into from the first surface of substrate
In one base area；
The second emitter region of multiple first conduction types is formed, the second emitter region extends into from the second surface of substrate
In two base areas, it is staggered with the first emitter region,
Wherein the first conduction type is complementary with the second conduction type.
In a specific embodiment, the size of multiple first emitter region and multiple second emitter region is identical, every two
Spacing between first emitter region is identical as the spacing between the second emitter region of every two.
In a specific embodiment, this method further include:
The first annular area of the first conduction type is formed, annulus is around the first base area；And/or
The second annulus of the first conduction type is formed, the second annulus is around the second base area.
In a specific embodiment, the spacing of first annular area and the first base area and the second annulus and the second base area
Spacing is identical.
In a specific embodiment, this method further include: in the first annular area and the multiple first emitter region
Between form the first slab region of the first conduction type；And/or second annulus and the multiple second emitter region it
Between form the second slab region of the first conduction type.
In a specific embodiment, this method further include: form the first injection region of the second conduction type, the first injection
Area extends into the first base area from first surface, and is oppositely arranged with first emitter region；And/or form the second conduction
Second injection region of type, the second injection region extend into the second base area from second surface, and with second emitter region
It is oppositely arranged.
In a specific embodiment, the doping concentration of the first injection region is greater than the doping concentration of the first base area；And/or the
The doping concentration of two injection regions is greater than the doping concentration of the second base area.
In a specific embodiment, the first metal layer is formed on the first base area；And is formed on the second base area
Two metal layers.
In a specific embodiment, substrate with a thickness of 150-190 microns.
In a specific embodiment, the first conduction type is N-type, and the second conduction type is p-type；Or first conductive-type
Type is p-type, and the second conduction type is N-type.
Voltage surge protector part of the invention is capable of providing forward and reverse surge protection ability, and in some preferred implementations
In example, the forward and reverse surge protection ability of voltage surge protector part of the invention is balanced, and aerial drainage speed is fast, small in size, and
The device can change its clamp voltage under the premise of capacitor is constant, be answered with adapting to not homologous ray device of surge protector
With requiring.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from, in the accompanying drawings:
Fig. 1 shows the manufacturing method of device of surge protector according to the present invention；
Fig. 2-6,7a, 7b, 8 show the device junction composition that each step according to the method for the present invention is formed；
Fig. 9 shows the circuit diagram of device of surge protector of the present invention；
Figure 10 shows the forward and reverse over-voltage aerial drainage I-V curve of device of surge protector of the present invention；
Figure 11 shows the circuit application circuit figure of device of surge protector of the present invention.
It should be noted that this specification attached drawing is not drawn to draw, and only schematical purpose, therefore, no
It should be understood any limitation on the scope of the present invention and constraint.In the accompanying drawings, similar component part is with similar attached drawing mark
Number mark.
Specific embodiment
It is described in detail referring to the drawings, the attached drawing forms a part of the invention, and in the present invention, attached
Figure is by showing to the explanation for implementing specific embodiments of the present invention.It should be understood that without departing from the scope of the present invention
In the case where using other embodiments and can carry out change in structure or in logic.For example, implementing for one
Illustrating the feature released or described can be used for other embodiments or generates another embodiment in conjunction with other embodiments.It is anticipated
Figure is that the present invention includes such modifications and variations.These examples are described with specific sentence, but they are understood not to
Limitation to scope of the appended claims.Attached drawing is merely for explanatory purpose and is not necessarily drawn to scale.Unless stated otherwise,
For purposes of clarity, corresponding element is adopted in different drawings is indicated by the same numerals.
Term " has ", " containing ", " includes that " including " etc. is open, the described structure of their expressions, element
Or the presence of feature, but additional element or feature is not precluded.
Corresponding doping concentration is indicated by indicating "+" or " ++ " later in doping type " n " or " p " in attached drawing.Example
Such as, " n- " indicates a doping concentration lower than the doping concentration of n doped region, and " n+/n++ " doped region has than n doped region
The high doping concentration of doping concentration, and " n++ " doped region has the doping concentration higher than the doping concentration of n+ doped region.Tool
There is the doped region of identical relative doping concentration might not absolute doping concentration having the same.For example, two different n doping
Area can have same or different absolute doping concentration.
Term " electrical contact " describes the permanent low ohm connection between electrical connecting element, for example, straight between related elements
Contact or via metal and/or highly doped semiconductor low ohm connection.
Embodiment 1
Fig. 1 is the flow chart 10 for manufacturing the voltage surge protector part of the present embodiment.Below in conjunction with the flow chart and phase of Fig. 1
The topology view answered explains in detail the present invention.
Step S100 forms N-type substrate 200, as shown in Figure 2.
Preferably, the substrate thickness with a thickness of existing voltage surge protector part of substrate 200 of the present invention
65%-95%.Such as existing substrate thickness is usually 200-230 microns, and substrate thickness of the invention is about 150-190 micro-
Rice.It is described after can shortening under the premise of reaching surge protection ability by technique adjustment using so thin substrate
The deep knot injection region the P++ knot time, while reducing the volume of device.
S105, forms the first base area of p-type 205, and the first base area 205 extends into substrate from the first surface of lining 200.The
One base area 205 can be formed using method well known to those skilled in the art, such as by injecting or spreading.
S110, form p-type second base area 210 opposite with the first base area 205, and the second base area 210 is from substrate and first
The opposite second surface in surface extends into substrate 200.Second base area 210 can use side well known to those skilled in the art
Method is formed, such as by injecting or spreading.
It, can also shape simultaneously note that in the present invention, the first base area 205 and the second base area 210 can be both respectively formed
At this is also well known for those skilled in the art.
Structure after forming the first base area 205 and the second base area 210 is as shown in Figure 3.
S115, forms multiple the first emitter region of N+ type 215, and the first emitter region 215 is extended into from the first surface of substrate 200
Enter in the first base area 205.First emitter region 215 can be formed using method well known to those skilled in the art, such as pass through note
Enter or spreads.
In the present invention, term " extending into ", which refers to, extends into but does not penetrate.For example, the first emitter region 215 from
The first surface of substrate 200 extends into the first base area 205, refers to that the first emitter region 215 terminates in the first base area 205,
The first base area 205 is not penetrated.
S120, forms multiple the second emitter region of N+ type 220, and the second emitter region 220 is extended into from the second surface of substrate 200
Enter in the second base area 210, is staggered with the first emitter region 215.
Note that unless stated otherwise, the present invention in step between sequence can change, as long as do not violate technology and
The sequence of logic.For example, can first manufacture the second emitter region after having manufactured the first, second base area, the first hair is remanufactured
Area is penetrated, i.e. execution step S120, then executes step S115.
Structure after forming the first emitter region 215 and the second emitter region 220 is as shown in Figure 4.Figure 4, it is seen that the
Entirety is staggered relatively (i.e. in vertical direction) on the direction perpendicular to substrate surface for one emitter region 215 and the second emitter region 220.
That is, the section in Fig. 4 is illustrated as: left side edge of first emitter region 215 close to the first base area 205 is arranged, and the second hair
Right side edge of the area 220 close to the second base area 210 is penetrated to be arranged.Certainly, first emitter region 215 and the second emitter region 220 be simultaneously
Not necessarily require it is whole be staggered, as long as each of multiple first emitter region 215 with it is each in multiple second emitter region 220
It is a to be staggered, i.e., it is misaligned in vertical direction.
Therefore, the thyristor of two NPNP structures is formd in N-type substrate 200.One is by the first emitter region of N+ type
215, the thyristor 300 that the first base area of p-type 205, N-type substrate 200 and the second base area of p-type 210 form, the other is by N+ type the
The thyristor 305 that two emitter region 220, the second base area of p-type 210, N-type substrate 200 and the first base area of p-type 205 form, such as Fig. 9
Shown in device 30.
Figure 10 shows the positive and negative over-voltage aerial drainage I-V curve of device of surge protector of the invention.As it can be seen that surge of the invention is protected
Shield device protects positive surge using forward direction NPNP structure, and reversed NPNP structure protects reversed surge,
With bidirectional protective ability.
Meanwhile the NPNP structure of formation be in vertical direction so that electric current it is vertical from electrode (such as Fig. 9
In electrode 310) flow to another electrode (such as electrode 315 in Fig. 9), the product with other available manufacturers of market is horizontal
Different to NPNP structure is formed, this vertical structure can effectively reduce the surface area and overall dimension of device.
When positive surge is applied on electrode 310, thyristor 300 is used as main surge protection unit, will be unrestrained
It gushes electric current to release, to protect system in parallel below not influenced by surge；When reverse surge is applied on electrode 315
It waits, thyristor 305 is used as main surge protection unit, surge current is released, to protect system in parallel below not by wave
The influence gushed.
Preferably, the size of multiple first emitter region is identical, and spacing is identical.Preferably, the size of multiple second emitter region
Identical, spacing is identical.It is highly preferred that the size of multiple first emitter region and multiple second emitter region is identical, every two first
Spacing between emitter region is identical as the spacing between the second emitter region of every two.In this case, due to chip structure
Symmetry, form one have the forward and reverse symmetrical device of surge protector of surge protection ability, I-V curve as shown in figure 9,
Breakdown voltage V positively and negativelyBRWith breakover current IBOSize is identical.
The region of spacing forms short-channel between multiple first emitter region 215 and between multiple second emitter region 220,
Play the role of euqalizing current, to avoid partial breakdown, improves device entirety discharge capacity and stability.
In a specific example, as shown in figure 5, the method also includes forming the first annular area 225 of N+ type, the first ring
Shape area 225 is around the first base area 205.First annular area 225 can independently form, can also be with the first emitter region 215 using together
One diffusion or injection technology are formed simultaneously, and are avoided because of structure change and additional process step.
This N+ ring structure changes the doping concentration at device surface, when a positive surge is applied in NPNP structure
When, the puncture place of N+P knot is become laterally puncturing along surface to N+ ring from longitudinal, then, by reasonably arranging the first ring
Shape area 225 can form the series of products of different clamp voltages at a distance from the first base area 205, from several hundred volts of high pressures to several
The low pressure of volt, structure of the invention can be applicable in.
In another specific example, as shown in figure 5, the method also includes formation the second annulus of N+ type 230, second
Annulus 230 is around the second base area 210.Second annulus 230 can independently form, and can also utilize with the second emitter region 220
Same diffusion or injection technology are formed simultaneously, and are avoided because of structure change and additional process step.
This N+ ring structure changes the doping concentration at device surface, when a reverse surge is applied in NPNP structure
When, the puncture place of N+P knot is become laterally puncturing along surface to N+ ring from longitudinal, then, by reasonably arranging the second ring
Shape area 230 can form the series of products of different clamp voltages at a distance from the second base area 210, from several hundred volts of high pressures to several
The low pressure of volt, structure of the invention can be applicable in.
In another specific example, as shown in figure 5, the method also includes forming first annular area 225 and the second annular
Both areas 230.The effect in above-mentioned two specific example had both may be implemented in this, can be with forward and reverse performance one of retainer member
It causes.
It, can also be in the first transmitting for the low-voltage series of device of surge protector of the present invention in a specific example
End and first annular area 225 on the length direction (i.e. extending direction, in Fig. 5 for perpendicular to paper direction) in area 215 it
Between formed the first slab region N+ 235, as shown in fig. 6, Fig. 6 thus 200 first surface of step back substrate upward when top view.The
One slab region 235 can both independently form, and can also utilize same diffusion with the first emitter region 215 and first annular area 225
Or injection technology is formed simultaneously, and is avoided because of structure change and additional process step.
In addition to situation shown in fig. 6, the first slab region 235 is additionally formed in the end in the width direction of the first emitter region
Between end and first annular area 225, i.e. in Fig. 5 between the first emitter region and first annular area 225 of the leftmost side.
By forming the first slab region 235, breakdown voltage V is further adjustedBRSize.In addition to adjustment breakdown voltage with
Outside, breakover current I can also be adjustedBOSize, if N+ annular sector width is too big, breakover current is bigger, device
Sensitivity will reduce；If N+ ring width is too small, cause breakover current too small, so that the probability of protection device malfunction adds
Greatly, the stability of system is influenced.So, the size and it and NPNP structure N+ emitter region of the first slab region N+ are reasonably adjusted
215 distance will to protect device under the premise of reaching predetermined protection voltage capability, obtain the turnover electricity of moderate size
Stream, guarantees the safety and reliability of device of surge protector.
It in another specific example, can also be in the second hair for the low-voltage series of device of surge protector of the present invention
Penetrate the end on the length direction (i.e. extending direction, for perpendicular to paper direction in Fig. 5) in area 220 and the second annulus 230
Between formed the second slab region N+ (not shown).Second slab region can both independently form, can also be with the second emitter region
220 and second annulus 230 using it is same diffusion or injection technology be formed simultaneously, avoid because structure change and additionally increase
Add processing step.
Second slab region be additionally formed in end in the width direction of the second emitter region and the second annulus 230 it
Between, i.e. in Fig. 5 between the second emitter region of the rightmost side and the second annulus 230.
By forming the second slab region, breakdown voltage V is further adjustedBRSize.Other than adjusting breakdown voltage,
Breakover current I can also be adjustedBOSize, if N+ annular sector width is too big, breakover current is bigger, device it is sensitive
Degree will reduce；If N+ ring width is too small, cause breakover current too small, so that the probability of protection device malfunction increases, shadow
The stability of acoustic system.So, reasonably adjust the second slab region N+ size and it with NPNP structure N+ emitter region 220 away from
From, it will make protection device under the premise of reaching predetermined protection voltage capability, obtain the breakover current of moderate size, guarantee
The safety and reliability of device of surge protector.
In another specific example, the method also includes forming both first annular area and second slab region.This both may be used
It, can be consistent with forward and reverse performance of retainer member to realize the effect in above-mentioned two specific example.
In a specific example of the invention, method of the invention further includes forming the first injection region 240 of P++ type,
First injection region 240 extends into the first base area 205 from first surface, and is oppositely arranged with the first emitter region 215.Such as figure
Shown in 7a and 7b (Fig. 7 a be first surface upward when device top view, Fig. 7 b be Fig. 7 a along A-A sectional view), first
Right side edge of the injection region 240 close to the first base area 205 is arranged.
The method for forming the first injection region 240 is well-known to those skilled in the art, such as ion implanting or diffusion.
The formation in this region can reduce bulk resistor after conducting, the effective ability for improving leakage current.
In addition, other similar product in the market, the substrate of use is thicker, makes the junction depth needs of the injection region P++ to be formed
It is deeper than the junction depth of p-type base area, voltage is reduced with this.This not only adds technology difficulties, overspending quality time, and this
The injection region P++ outstanding increases the sectional area in entire p type island region domain, increases the integral capacitor of device, and it is instantly right not to be able to satisfy
The application requirement of high speed device.However, as previously mentioned, the present invention can use relatively thin substrate, in this case, originally
The depth of the first injection region P++ of invention can be less than the depth of the first base area 205, before guaranteeing high current relieving capacity
It puts, the knot time can be shortened, increase technology difficulty and whole capacitance that will not be additional.
In another specific example of the invention, method of the invention further includes forming the second injection region of P++ type
245, the second injection region 245 extends into the second base area 210 from second surface, and is oppositely arranged with the second emitter region 220.
As shown in Figure 7b, left side edge of second injection region 245 close to the second base area 210 is arranged.
The method for forming the second injection region 245 is well-known to those skilled in the art, such as ion implanting or diffusion.
The formation in this region can reduce bulk resistor after conducting, effectively improve the ability of leakage current.
In addition, other similar product in the market, the substrate of use is thicker, makes the junction depth needs of the injection region P++ to be formed
It is deeper than the junction depth of p-type base area, voltage is reduced with this.This not only adds technology difficulties, overspending quality time, and this
The injection region P++ outstanding increases the sectional area in entire p type island region domain, increases the integral capacitor of device, and it is instantly right not to be able to satisfy
The application requirement of high speed device.However, as previously mentioned, the present invention can use relatively thin substrate, in this case, originally
The depth of the second injection region P++ of invention can be less than the depth of the second base area 210, before guaranteeing high current relieving capacity
It puts, the knot time can be shortened, increase technology difficulty and whole capacitance that will not be additional.
In another specific example of the invention, method of the invention further includes forming the first injection region 240 of P++ type
Both with the second injection region 245, as shown in Figure 7b.The effect in above-mentioned two specific example had both may be implemented in this, can also protect
Forward and reverse performance of holder part is consistent.
In the present invention, had before N or P " ++ ", "+" and without "+" indicate doping concentration between can successively differ
The 2-3 order of magnitude.
After completing method shown in FIG. 1 or it is additional complete above-mentioned additional preferred steps after, can be with
Dielectric is formed in first surface and second surface, forms ohmic contact hole, and then form the first metal layer 250 and the second gold medal
Belong to layer 255, as shown in Figure 8.
The outside of aforementioned short-channel is directly in electrical contact with the metal layer 250 and 255 on the outside of N+ emitter region 215 and 220.
P-type base area 205 and 210 where N+ emitter region 215 and 220, is connected to metal layer 250 and 255 by above-mentioned short-channel,
P-type base area 205 and 210 is connected by metal layer 250 with 255 with N+ emitter region 215 and 220.
The device of surge protector can use standard SMA/SMB packing forms, as shown in figure 9, metal layer on back 255 is excellent
The Ji Dao of selection of land and plastic package lead frame is connected directly and leads to an electrode 315 of device of surge protector, upper metal layers
250 preferably connect by welding wire and lead to another electrode 310 of device of surge protector.
Embodiment 2
Embodiment 2 is similar with the device architecture of method and formation in embodiment 1, only by the conductive-type in embodiment 1
Type N changes into P, and P changes into N.Therefore, details are not described herein.
Figure 11 is the application drawing according to device of surge protector of the present invention, which has forward and reverse two protection locations, right
Forward and reverse surge in route is released, with the operation for protecting system in parallel therewith safe and stable.
In the above description, the technical details such as composition, the etching of each layer are not described in detail.But
It will be appreciated by those skilled in the art that can be by various means in the prior art, to form layer, the region of required shape
Deng.In addition, in order to form same structure, those skilled in the art be can be devised by and process as described above not fully phase
Same method.
The present invention is described above by reference to the embodiment of the present invention.But these embodiments are used for the purpose of saying
Bright purpose, and be not intended to limit the scope of the invention.The scope of the present invention is limited by appended claims and its equivalent.
The scope of the present invention is not departed from, those skilled in the art can make a variety of substitutions and modifications, these substitutions and modifications should all be fallen
Within the scope of the present invention.
Claims (20)
1. a kind of voltage surge protector part characterized by comprising
The substrate (200) of first conduction type；
The first base area (205) of second conduction type, extends into the substrate from the first surface of the substrate；
The second base area (210) of second conduction type opposite with first base area, from the substrate and first table
The opposite second surface in face extends into the substrate；
The first emitter region (215) of multiple first conduction types extends into first base from the first surface of the substrate
Qu Zhong；
The second emitter region (220) of multiple first conduction types extends into second base from the second surface of the substrate
Qu Zhong is staggered with first emitter region,
The first annular area (225) of first conduction type, around first base area；
The first slab region (235) of first conduction type is formed in the first emitter region of the multiple first conduction type in length
Spend direction on end and the first annular area between and on the projecting direction perpendicular to the substrate with first base
Area partly overlaps；
Wherein first conduction type is complementary with the second conduction type.
2. voltage surge protector part according to claim 1, which is characterized in that
First emitter region of the multiple first conduction type and the second emitter region of the multiple first conduction type it is big
Small identical, the spacing between the first emitter region of every two is identical as the spacing between the second emitter region of every two.
3. voltage surge protector part according to claim 1, which is characterized in that further include:
The second annulus (230) of first conduction type, around second base area.
4. voltage surge protector part according to claim 3, which is characterized in that
The first annular area and the spacing of first base area and the spacing phase of second annulus and second base area
Together.
5. voltage surge protector part according to claim 3, which is characterized in that further include:
Second slab region of the first conduction type is formed in the second emitter region of the multiple first conduction type in length direction
On end and second annulus between and on the projecting direction perpendicular to substrate with second base area part
Overlapping.
6. voltage surge protector part according to claim 1, which is characterized in that further include:
The first injection region (240) of second conduction type, extends into first base area from the first surface, and with
First emitter region is oppositely arranged；And/or
The second injection region (245) of second conduction type, extends into second base area from the second surface, and with
Second emitter region is oppositely arranged.
7. voltage surge protector part according to claim 6, which is characterized in that
The doping concentration of first injection region is greater than the doping concentration of the first base area；And/or
The doping concentration of second injection region is greater than the doping concentration of the second base area.
8. voltage surge protector part according to claim 1, which is characterized in that further include:
The first metal layer (250), is formed on the first base area；And
Second metal layer (255), is formed on the second base area.
9. voltage surge protector part according to claim 6, which is characterized in that
The substrate with a thickness of 150-190 microns.
10. voltage surge protector part as claimed in one of claims 1-9, which is characterized in that
First conduction type is N-type, and the second conduction type is p-type；Or
First conduction type is p-type, and the second conduction type is N-type.
11. a kind of manufacturing method of voltage surge protector part characterized by comprising
Form the substrate (200) of the first conduction type；
The first base area (205) of the second conduction type is formed, first base area is extended into from the first surface of the substrate
In the substrate；
Form the second base area (210) of second conduction type opposite with first base area, second base area is from the lining
The second surface opposite with the first surface at bottom extends into the substrate；
Form the first emitter region (215) of multiple first conduction types, first surface of first emitter region from the substrate
It extends into first base area；
Form the second emitter region (220) of multiple first conduction types, second surface of second emitter region from the substrate
It extends into second base area, is staggered with first emitter region；
The first annular area (225) of the first conduction type is formed, the first annular area is around first base area；
The first slab region (235) of the first conduction type is formed, the first slab region of first conduction type is formed in described
Between the end and the first annular area of first emitter region of multiple first conduction types in the longitudinal direction and perpendicular to
It partly overlaps on the projecting direction of the substrate with first base area；
Wherein first conduction type is complementary with the second conduction type.
12. the manufacturing method of voltage surge protector part according to claim 11, which is characterized in that
First emitter region of the multiple first conduction type and the second emitter region of the multiple first conduction type it is big
Small identical, the spacing between the first emitter region of every two is identical as the spacing between the second emitter region of every two.
13. the manufacturing method of voltage surge protector part according to claim 12, which is characterized in that further include:
The second annulus (230) of the first conduction type is formed, second annulus is around second base area.
14. the manufacturing method of voltage surge protector part according to claim 13, which is characterized in that
The first annular area and the spacing of first base area and the spacing phase of second annulus and second base area
Together.
15. the manufacturing method of voltage surge protector part according to claim 13, which is characterized in that further include:
The second slab region of the first conduction type is formed, the second slab region of first conduction type is formed in the multiple
Perpendicular to lining between second emitter region of one conduction type end in the longitudinal direction and second annulus and described
It partly overlaps on the projecting direction at bottom with second base area.
16. the manufacturing method of voltage surge protector part according to claim 11, which is characterized in that further include:
The first injection region (240) of the second conduction type is formed, first injection region extends into institute from the first surface
It states in the first base area, and is oppositely arranged with first emitter region；And/or
The second injection region (245) of the second conduction type is formed, second injection region extends into institute from the second surface
It states in the second base area, and is oppositely arranged with second emitter region.
17. the manufacturing method of voltage surge protector part according to claim 16, which is characterized in that
The doping concentration of first injection region is greater than the doping concentration of the first base area；And/or
The doping concentration of second injection region is greater than the doping concentration of the second base area.
18. the manufacturing method of voltage surge protector part according to claim 11, which is characterized in that
The first metal layer (250) are formed on the first base area；And
Second metal layer (255) are formed on the second base area.
19. the manufacturing method of voltage surge protector part according to claim 16, which is characterized in that
The substrate with a thickness of 150-190 microns.
20. the manufacturing method of the voltage surge protector part of any one of 1-19 according to claim 1, which is characterized in that
First conduction type is N-type, and the second conduction type is p-type；Or
First conduction type is p-type, and the second conduction type is N-type.
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0574321A (en) * | 1991-07-29 | 1993-03-26 | Nippon Telegr & Teleph Corp <Ntt> | Surge protecting element |
| CN1667841A (en) * | 2004-03-08 | 2005-09-14 | 敦南科技股份有限公司 | Over-voltage protection device and process for making same |
| CN101819972A (en) * | 2009-02-09 | 2010-09-01 | 万国半导体有限公司 | Configuration of gate to drain (gd) clamp and ESD protection circuit for power device breakdown protection |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4369230B2 (en) * | 2001-11-07 | 2009-11-18 | 新電元工業株式会社 | Surge protection semiconductor device |
| JP5369300B2 (en) * | 2009-09-16 | 2013-12-18 | 三菱電機株式会社 | Semiconductor device and manufacturing method thereof |
| JP5435138B2 (en) * | 2011-06-24 | 2014-03-05 | 富士電機株式会社 | High voltage integrated circuit device |
| CN204720449U (en) * | 2015-05-28 | 2015-10-21 | 北京燕东微电子有限公司 | Voltage surge protector part |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0574321A (en) * | 1991-07-29 | 1993-03-26 | Nippon Telegr & Teleph Corp <Ntt> | Surge protecting element |
| CN1667841A (en) * | 2004-03-08 | 2005-09-14 | 敦南科技股份有限公司 | Over-voltage protection device and process for making same |
| CN101819972A (en) * | 2009-02-09 | 2010-09-01 | 万国半导体有限公司 | Configuration of gate to drain (gd) clamp and ESD protection circuit for power device breakdown protection |
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