CN104900630B - Improve structure of alignment mark contrast and forming method thereof - Google Patents
Improve structure of alignment mark contrast and forming method thereof Download PDFInfo
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- CN104900630B CN104900630B CN201510308861.0A CN201510308861A CN104900630B CN 104900630 B CN104900630 B CN 104900630B CN 201510308861 A CN201510308861 A CN 201510308861A CN 104900630 B CN104900630 B CN 104900630B
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- alignment mark
- passivation
- contrast
- hole
- forming method
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Abstract
The present invention proposes a kind of structure for improving alignment mark contrast and forming method thereof, passivation hole is being formed around alignment mark in preset space length, due to being passivated the presence in hole, light can be reflected at passivation hole and diffusing reflection, so as to avoid light from directly reflecting, increase alignment mark and the contrast being passivated at hole, be advantageous to equipment board identification alignment mark.
Description
Technical field
The present invention relates to field of semiconductor manufacture, more particularly to a kind of structure for improving alignment mark contrast and its formation
Method.
Background technology
In semiconductor manufacturing process, it is necessary to the film layer on wafer is performed etching, exposes and scanned etc. processing,
Because different regions needs to carry out different PROCESS FOR TREATMENTs, therefore, in order to make the difference on equipment board identification wafer
Region, it will usually multiple alignment marks (Alignment mark) are provided with wafer, facilitate equipment board when carrying out technique,
Wafer is first directed at, so as to be positioned to the different zones on wafer.
For example, when carrying out wafer defect scanning, it usually needs first position, Defect Scanning board can be first to pair on wafer
Fiducial mark remembers row Search and Orientation into, after being aligned, just starts to be scanned the defects of wafer, consequently facilitating confirming defective bit
In the particular location on wafer；In addition, for example, circuit modifications board generally use laser cut metal is to carry out circuit structure
Modification or one-time write code, in order to be cut in correct place, it is necessary to be accurately positioned to wafer.Therefore, if
Standby host platform can first find alignment mark, such as L-shaped alignment mark, then according to the alignment mark carry out wafer general alignment and
It is accurately positioned.
But found in practical operation, because crystal column surface has the reason of reflected light, reduce alignment mark and week
The contrast enclosed, make alignment mark be not easy to be identified, cause the more difficult identification alignment mark of equipment board to be aligned.Specifically,
Fig. 1 is refer to, Fig. 1 is the structural profile illustration of alignment mark in the prior art；On substrat structure 10 formed passivation layer 20 and
Alignment mark 30, because the surface of passivation layer 20 is silicon nitride film, reflection of the film to light is stronger, and alignment mark 30
Surface is aluminium film, and when light (light is as shown by arrows in FIG.) exposes to surface both, surface both can reflect stronger
Reflected light, cause both of which present bright state so that under the contrast of alignment mark 30 and the passivation layer 20 around it
Drop, is not easy to be identified.
The content of the invention
It is an object of the invention to provide a kind of structure for improving alignment mark contrast and forming method thereof, it is possible to increase
The contrast of alignment mark and surrounding, it is set to be relatively easy to be identified.
To achieve these goals, the present invention proposes a kind of structure for improving alignment mark contrast, including：Substrate knot
Structure, alignment mark and passivation hole, the alignment mark are formed on the substrat structure, and the passivation hole is formed in alignment mark
In surrounding preset space length.
Further, in the structure of described raising alignment mark contrast, the preset space length scope is 0~1000
μm。
Further, in the structure of described raising alignment mark contrast, the substrat structure includes passivation layer, institute
Passivation hole is stated to be formed in the passivation layer.
Further, in the structure of described raising alignment mark contrast, the depth in the passivation hole is more than or equal to
1000 angstroms.
Further, in the structure of described raising alignment mark contrast, being shaped as the passivation hole is circular, ellipse
Circular, square, rectangle or annular.
The invention also provides a kind of forming method for the structure for improving alignment mark contrast, for being formed such as institute above
The structure for the raising alignment mark contrast stated, it is pre- around alignment mark while forming alignment mark opening using etching
Passivation hole is formed in determining deviation, or, made a reservation for before or after alignment mark is formed using etching around alignment mark
Passivation hole is formed in spacing.
Further, in the structure of described raising alignment mark contrast, the preset space length scope is 0~1000
μm。
Further, in the structure of described raising alignment mark contrast, substrat structure includes passivation layer, described blunt
Change hole to be formed in the passivation layer.
Further, in the structure of described raising alignment mark contrast, the depth in the passivation hole is more than or equal to
1000 angstroms.
Further, in the structure of described raising alignment mark contrast, being shaped as the passivation hole is circular, ellipse
Circular, square, rectangle or annular.
Compared to prior art, the beneficial effects are mainly as follows：Around alignment mark in preset space length
Passivation hole is formed, due to being passivated the presence in hole, light can be reflected at passivation hole and diffusing reflection, so as to avoid light direct
Reflect, increase alignment mark and the contrast being passivated at hole, be advantageous to equipment board identification alignment mark.
Brief description of the drawings
Fig. 1 is the structural profile illustration of alignment mark in the prior art；
Fig. 2 is the structural profile illustration that alignment mark contrast is improved in one embodiment of the invention.
Embodiment
Carried out more below in conjunction with the structure of raising alignment mark contrast of schematic diagram to the present invention and forming method thereof
Detailed description, which show the preferred embodiments of the present invention, it should be appreciated that those skilled in the art can change and retouch herein
The present invention stated, and still realize the advantageous effects of the present invention.Therefore, description below is appreciated that for art technology
Personnel's is widely known, and is not intended as limitation of the present invention.
For clarity, whole features of practical embodiments are not described.In the following description, it is not described in detail known function
And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments
In hair, it is necessary to a large amount of implementation details are made to realize the specific objective of developer, such as according to relevant system or relevant business
Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expended
Time, but it is only to those skilled in the art routine work.
More specifically description is of the invention by way of example referring to the drawings in the following passage.Will according to following explanation and right
Book is sought, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing is using very simplified form and using non-
Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.
Fig. 2 is refer to, in the present embodiment, it is proposed that a kind of structure for improving alignment mark contrast, including：Substrate knot
Structure 100, alignment mark 300 and passivation hole 400, the alignment mark 300 are formed on the substrat structure 100, the passivation
Hole 400 is formed around alignment mark 300 in preset space length.
In the present embodiment, the preset space length scope is 0~1000 μm, e.g. 10 μm, and passivation hole 400 is formed
In the surrounding preset space length of alignment mark 300, the reflected intensity of the ambient light of alignment mark 300 can be reduced, keeps alignment mark 300
The reflected intensity of light is constant, so as to increase alignment mark 300 and the contrast around it；The substrat structure 100 includes passivation
Layer 200, the passivation hole 400 are formed in the passivation layer 200；The depth in the passivation hole 400 is more than or equal to 1000 angstroms, from
And the direct reflection of light can be avoided well, increase refraction and diffusing reflection effect.
As mentioned by background technology, if not forming passivation hole around alignment mark 300, light is exposing to its table
During face, light reflection is stronger, and its surface can be in bright state, because bright state can be also presented in the surface of alignment mark 300,
Contrast between the two is relatively low, makes alignment mark 300 be not easy to be identified；As shown in Fig. 2 in the present embodiment, alignment mark
300 both sides have been respectively formed passivation hole 400, when light exposes to its surface (as shown by arrows in FIG.), due to being passivated hole 400
Presence, light can be refracted and diffusing reflection, thus the state of more dark (reflection is weaker) can be presented in it, so as to and alignment mark
300, which are presented bright (reflection is stronger) state, is presented higher contrast, is easily identified by equipment board.
In the present embodiment, passivation hole 400 can form the surrounding in alignment mark 300, be not limited to a single side.And
And the passivation hole 400 is shaped as the shapes such as circular, oval, square, rectangle or annular.Can according to technique come
It is adjusted.In addition, the open top in the passivation hole 400 is more than bottom opening, inverted trapezoidal shape is presented, is easy to the unrestrained anti-of light
Penetrate.
In the another aspect of the present embodiment, it is also proposed that a kind of forming method for the structure for improving alignment mark contrast,
For forming the structure of raising alignment mark contrast as described above, alignment mark 300 is formed using etching and is open or shape
Passivation hole 400 is being formed around alignment mark 300 in preset space length while opening into bond pad (Bonding Pad), or
Person, made a reservation for before or after forming alignment mark 300 or forming bonding dish opening using etching around alignment mark 300
Passivation hole 400 is formed in spacing.
That is, the formation in passivation hole 400, which can be open or be formed with formation alignment mark 300, is bonded the same of dish opening
When formed, be not required to increase extra processing step, can also individually increase by one of lithographic process, be exposed development and etching is single
Solely formed, be not limited to before or after alignment mark 300 is formed, flexibly can be embedded in different process.
To sum up, in structure of raising alignment mark contrast provided in an embodiment of the present invention and forming method thereof, right
Fiducial mark note surrounding's preset space length in formed passivation hole, due to be passivated hole presence, light can passivation hole at carry out refraction and
Diffusing reflection, so as to avoid light from directly reflecting, increase alignment mark and the contrast being passivated at hole, be advantageous to the knowledge of equipment board
Other alignment mark.
The preferred embodiments of the present invention are above are only, any restrictions effect is not played to the present invention.Belonging to any
Those skilled in the art, in the range of technical scheme is not departed from, to the invention discloses technical scheme and
Technology contents make the variation such as any type of equivalent substitution or modification, belong to the content without departing from technical scheme, still
Belong within protection scope of the present invention.
Claims (8)
- A kind of 1. structure for improving alignment mark contrast, it is characterised in that including：Substrat structure, alignment mark and passivation layer, The alignment mark and the passivation layer are formed on the substrat structure, and the passivation layer includes passivation hole and bulge-structure, The passivation hole is formed around alignment mark in preset space length, and the bulge-structure limits the alignment mark, the passivation Hole penetrates the passivation layer and extended to inside the substrat structure.
- 2. the structure of alignment mark contrast is improved as claimed in claim 1, it is characterised in that the preset space length scope is 0~1000 μm.
- 3. the structure of alignment mark contrast is improved as claimed in claim 1, it is characterised in that the depth in the passivation hole is big In equal to 1000 angstroms.
- 4. the structure of alignment mark contrast is improved as claimed in claim 1, it is characterised in that the passivation hole is shaped as Circular, oval, square, rectangle or annular.
- A kind of 5. forming method for the structure for improving alignment mark contrast, for forming raising pair as claimed in claim 1 Fiducial mark remembers the structure of contrast, it is characterised in that sequentially forms substrat structure, passivation layer and alignment mark, the alignment mark Formed with the passivation layer on the substrat structure, in the week of alignment mark while forming alignment mark opening using etching Enclose and passivation hole and bulge-structure are formed in preset space length, or, it is being aligned before or after alignment mark is formed using etching Passivation hole is formed in surrounding's preset space length of mark, the passivation hole penetrates the passivation layer and extended in the substrat structure Portion.
- 6. the forming method of the structure of alignment mark contrast is improved as claimed in claim 5, it is characterised in that described predetermined Spacing range is 0~1000 μm.
- 7. the forming method of the structure of alignment mark contrast is improved as claimed in claim 5, it is characterised in that the passivation The depth in hole is more than or equal to 1000 angstroms.
- 8. the forming method of the structure of alignment mark contrast is improved as claimed in claim 5, it is characterised in that the passivation Being shaped as hole is circular, oval, square, rectangle or annular.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510308861.0A CN104900630B (en) | 2015-06-07 | 2015-06-07 | Improve structure of alignment mark contrast and forming method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510308861.0A CN104900630B (en) | 2015-06-07 | 2015-06-07 | Improve structure of alignment mark contrast and forming method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104900630A CN104900630A (en) | 2015-09-09 |
| CN104900630B true CN104900630B (en) | 2018-01-26 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115440707A (en) * | 2022-09-20 | 2022-12-06 | 中国科学院光电技术研究所 | Alignment mark structure and forming method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103572246A (en) * | 2012-07-31 | 2014-02-12 | 三星显示有限公司 | Mask for deposition and method for alignment thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7835001B2 (en) * | 2006-05-24 | 2010-11-16 | Samsung Mobile Display Co., Ltd. | Method of aligning a substrate, mask to be aligned with the same, and flat panel display apparatus using the same |
| JP2010106358A (en) * | 2008-09-30 | 2010-05-13 | Canon Inc | Film formation mask and film formation method using the same |
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103572246A (en) * | 2012-07-31 | 2014-02-12 | 三星显示有限公司 | Mask for deposition and method for alignment thereof |
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