CN104891822A - Sulfonic acid group phthalocyanine nickel-graphene oxide composite film material and preparation method thereof - Google Patents

Sulfonic acid group phthalocyanine nickel-graphene oxide composite film material and preparation method thereof Download PDF

Info

Publication number
CN104891822A
CN104891822A CN201510271089.XA CN201510271089A CN104891822A CN 104891822 A CN104891822 A CN 104891822A CN 201510271089 A CN201510271089 A CN 201510271089A CN 104891822 A CN104891822 A CN 104891822A
Authority
CN
China
Prior art keywords
nickel
film material
thin film
sulfonic
composite thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201510271089.XA
Other languages
Chinese (zh)
Other versions
CN104891822B (en
Inventor
贺春英
蒋恩晶
陈博文
王钊
赵呈
李宗乐
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heilongjiang University
Original Assignee
Heilongjiang University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heilongjiang University filed Critical Heilongjiang University
Priority to CN201510271089.XA priority Critical patent/CN104891822B/en
Publication of CN104891822A publication Critical patent/CN104891822A/en
Application granted granted Critical
Publication of CN104891822B publication Critical patent/CN104891822B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Landscapes

  • Carbon And Carbon Compounds (AREA)

Abstract

The invention provides a sulfonic acid group phthalocyanine nickel-graphene oxide composite film material and a preparation method thereof, and belongs to the field of nonlinear optics to solve the problem that the existing nonlinear optical film material is relatively poor in three-order nonlinear optical performance. The sulfonic acid group phthalocyanine nickel-graphene oxide composite film material is prepared into a film by virtue of an electrostatic self-assembly method by using a phthalocyanine compound and a graphene oxide aqueous solution. The preparation method comprises the following steps: 1, alternately placing quartz substrates into a PDDA solution and a PSS solution to prepare substrates with negative charges; 2, putting the substrates into the PDDA solution, an alpha-SLPcNi aqueous solution, the PDDA solution and the graphene oxide aqueous solution in sequence; and 3, repeating the step 2 for multiple times to obtain the composite film material. According to the preparation method provided by the invention, tetra-alpha-(4-sulfonic acid phenoxy) phthalocyanine nickel with nickel as a center metal is selected, the three-order nonlinear absorption coefficient beta of the composite film material is 4.16*10<-5>m/W, and the composite film material has good three-order nonlinear optical performance.

Description

A kind of sulfonic phthalocyanin nickel-graphene composite thin film material and preparation method
Technical field
The invention belongs to non-linear optical field, be specifically related to metal phthalocyanine-graphene composite thin film material and preparation method.
Background technology
Nonlinear optical material occupies critical role in optically functional device design and R&D process.Nonlinear optical material is assembled into the requirement that solid film is functional materials implementation, and phthalocyanine and Graphene are all good nonlinear optical materials.Phthalocyanine is as classical organic non linear optical material, and phthalocyanine part has special planar conjugate π-electron structure, and the macrocyclic ring system of conjugation has strong π-π-electron effect, so this compounds has special light, and electricity, the special propertys such as magnetic.The two-dimensional material of up-and-coming youngster's Graphene of nonlinear optical material-the thinnest in the world, extensively obtains the concern of investigator.The carbon atom of Graphene inside is interconnected by the large conjugatedπbond of very high bond energy, and due to energy band structure and the excellent character of its uniqueness, these character make Graphene on opto-electronic device, have potential application.But, due to the problem of solvability difficulty, Graphene is restricted in the application of optical field.Be oxidized by Graphene, make its surface increase many oxygen-containing functional groups, such as hydroxyl, carboxyl etc., improve the solvability of Graphene, also effectively change its photoelectric property simultaneously.Phthalocyanine and graphene oxide are all two-dimension plane structure, phthalocyanine and Graphene physics are combined with each other, pi-pi accumulation can well be reached, mutually adsorbed by electrostatic interaction and have stable performance, now matrix material is compared with single material (phthalocyanine or graphene oxide), have higher non-linear absorption coefficient, the phthalocyanine therefore after compound and graphene oxide are more suitable for doing light limiting material.
Electrostatic Self-Assembled Films technology refers to the multilayer film that the ion of oppositely charged is formed by electrostatic interaction alternating deposit.From the nineties in last century, technique is proposed by people such as Sagi, due to the advantage that it is exclusive relative to other technology for coatings, and can the composition of controlling diaphragm and thickness, thus realize film optical, electrical, magnetic, the functionalization such as to free.Therefore extensive concern is subject in self-assembling technique field.
Summary of the invention
The object of the invention is the problem that third order non-linear optical property in order to solve existing nonlinear optical film material is poor, and a kind of sulfonic phthalocyanin nickel-graphene composite thin film material and preparation method are provided.
Sulfonic phthalocyanin nickel-graphene composite thin film material of the present invention by the aqueous solution of phthalocyanine compound and graphene oxide with the method film forming of electrostatic self-assembled, wherein said phthalocyanine compound is charged four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine (α-PhSPcNi), and its structural formula is:
The preparation method of sulfonic phthalocyanin nickel-graphene composite thin film material of the present invention follows these steps to realize:
One, pretreated quartz substrate is placed in PDDA (diallyl dimethyl ammoniumchloride) solution immersion 8 ~ 10min that mass concentration is 10%, cleans with distilled water after taking-up, N 2being immersed in mass concentration after drying up again is 8 ~ 10min in PSS (sodium polystyrene sulfonate) solution of 10%, cleans, use N after taking-up with distilled water 2dry up, complete a PDDA-PSS immersion process, repeat PDDA-PSS immersion process three times, obtain the substrate with negative charge;
Two, PDDA solution immersion 8 ~ 10min that mass concentration is 10% put into by the substrate with negative charge step one obtained, and cleans, N after taking-up with distilled water 2be immersed in 8 ~ 10min in four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine (α-SLPcNi) aqueous solution after drying up, clean with distilled water after taking-up, N 2being immersed in mass concentration after drying up again is soak 8 ~ 10min in the PDDA solution of 10%, cleans, use N after taking-up with distilled water 2dry up and be finally immersed in 8 ~ 10min in graphene oxide (GO) aqueous solution afterwards, clean with distilled water after taking-up, use N 2dry up, complete single to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling;
Three, repeatedly the list of step 2, to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling process, obtains sulfonic phthalocyanin nickel-graphene composite thin film material.
The present invention selects central metal to be four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine of nickel, Charger transfer effect between central metal and phthalocyanine ring effectively increases the electron delocalization energy of phthalocyanine, the non-linear susceptibility of phthalocyanine is made at least to strengthen two orders of magnitude than metal-free phthalocyanine, the third-order nonlinear susceptibility χ of phthalocyanine solution (3)value is maximum to be reached 10 -10esu.Adopt the graphene oxide that Hummers legal system is standby, there is good dispersiveness.Choose electrostatic self-assembled mode and obtain four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film material, its film thickness determines by assembling the number of plies.Electrostatic self-assembled operating process is simple, and requirement for experiment condition is loose.Phthalocyanine complex and Graphene are two-dimension plane structure, in film process, phthalocyanine and Graphene can be tightly packed, be conducive to transfer transport therebetween, and define larger conjugated pi electron system, be conducive to third-order non-linear to absorb, the third-order non-linear uptake factor β of this sulfonic phthalocyanin nickel-graphene composite thin film is 4.16 × 10 -5m/W.This four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene oxide composite non-linear thin-film material stable performance, has good third order non-linear optical property, can be applied in optical Limiting and lasing safety field.
Accompanying drawing explanation
Fig. 1 is that the 1-10 that obtains of embodiment two is to the uv-visible absorption spectra of layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene oxide composite non-linear film, the number of plies of nonlinear optical film reduces in the direction of the arrow, 1-four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine aqueous solution, 2-graphene oxide water solution;
Fig. 2 is 30 trying hard to the atom of layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene oxide composite nonlinear optical film of obtaining of embodiment four;
Fig. 3 is 30 3 dimensional drawings to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene oxide composite nonlinear optical film that embodiment four obtains;
Fig. 4 is the 20 Raman spectrograms to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene oxide composite nonlinear optical film that embodiment three obtains;
Fig. 5 is the 30 perforate Z-scanning curves to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene oxide composite nonlinear optical film that embodiment four obtains.
Embodiment
Embodiment one: present embodiment sulfonic phthalocyanin nickel-graphene composite thin film material by the aqueous solution of phthalocyanine compound and graphene oxide with the method film forming of electrostatic self-assembled, wherein said phthalocyanine compound is charged four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine (α-PhSPcNi), and its structural formula is:
Embodiment two: present embodiment and embodiment one adopt Hummers method to prepare unlike described graphene oxide.
Graphene oxide described in present embodiment adopts Hummers legal system standby, and have good dispersiveness, its structural formula is
Embodiment three: the preparation method of present embodiment sulfonic phthalocyanin nickel-graphene composite thin film material follows these steps to implement:
One, pretreated quartz substrate is placed in PDDA (diallyl dimethyl ammoniumchloride) solution immersion 8 ~ 10min that mass concentration is 10%, cleans with distilled water after taking-up, N 2being immersed in mass concentration after drying up again is 8 ~ 10min in PSS (sodium polystyrene sulfonate) solution of 10%, cleans, use N after taking-up with distilled water 2dry up, complete a PDDA-PSS immersion process, repeat PDDA-PSS immersion process three times, obtain the substrate with negative charge;
Two, PDDA solution immersion 8 ~ 10min that mass concentration is 10% put into by the substrate with negative charge step one obtained, and cleans, N after taking-up with distilled water 2be immersed in 8 ~ 10min in four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine (α-SLPcNi) aqueous solution after drying up, clean with distilled water after taking-up, N 2being immersed in mass concentration after drying up again is soak 8 ~ 10min in the PDDA solution of 10%, cleans, use N after taking-up with distilled water 2dry up and be finally immersed in 8 ~ 10min in graphene oxide (GO) aqueous solution afterwards, clean with distilled water after taking-up, use N 2dry up, complete single to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling;
Three, repeatedly the list of step 2, to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling process, obtains sulfonic phthalocyanin nickel-graphene composite thin film material.
Present embodiment adopts electrostatic self-assembled method, prepares one and trends towards practical application four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film material, can be applicable to nonlinear optics and laser radiation field.Whole preparation process is simple, easy to operate, to equipment without particular requirement, is a kind of eco-friendly method.
Embodiment four: present embodiment and embodiment three are that quartz substrate is first used acetone wiped clean unlike the pretreated quartz substrate described in step one, then 5min in the NaOH solution of 1mol/L is immersed, taking-up afterwash dries up, and obtains pretreated quartz substrate.Other step and parameter identical with embodiment three.
Embodiment five: present embodiment and embodiment three or four are 0.8 ~ 1.5mg/ml unlike the concentration of four-α described in step 2-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine aqueous solution.Other step and parameter identical with embodiment three or four.
Embodiment six: present embodiment and embodiment five are 1mg/ml unlike the concentration of four-α described in step 2-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine aqueous solution.Other step and parameter identical with embodiment three or four.
Embodiment seven: one of present embodiment and embodiment three to six are 0.08 ~ 0.15mg/ml unlike the concentration of the graphene oxide water solution described in step 2.Other step and parameter identical with one of embodiment three to six.
Embodiment eight: present embodiment and embodiment seven are 0.1mg/ml unlike the concentration of the graphene oxide water solution described in step 2.Other step and parameter identical with embodiment seven.
Embodiment nine: one of present embodiment and embodiment three to eight repeat the single to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling process of 15 ~ 30 step 2 unlike step 3.Other step and parameter identical with one of embodiment three to eight.
Embodiment one: the preparation method of the present embodiment sulfonic phthalocyanin nickel-graphene composite thin film material follows these steps to implement:
One, pretreated quartz substrate is placed in mass concentration be 10% PDDA (diallyl dimethyl ammoniumchloride) solution soak 10min, after taking-up with intermediate water clean, N 2being immersed in mass concentration after drying up again is 10min in PSS (sodium polystyrene sulfonate) solution of 10%, cleans, use N after taking-up with intermediate water 2dry up, complete a PDDA-PSS immersion process, repeat PDDA-PSS immersion process three times, obtain the substrate with negative charge;
Two, the substrate with negative charge step one obtained put into mass concentration be 10% PDDA solution soak 10min, after taking-up with intermediate water clean, N 2be immersed in 10min in four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine (α-SLPcNi) aqueous solution that concentration is 1mg/ml after drying up, clean with intermediate water after taking-up, N 2being immersed in mass concentration after drying up again is soak 10min in the PDDA solution of 10%, cleans, use N after taking-up with intermediate water 2drying up the rear concentration that is finally immersed in is 10min in the graphene oxide water solution of 0.1mg/ml, cleans, use N after taking-up with intermediate water 2dry up, complete single to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling.
PDDA and the PSS used in the present embodiment all buys from Sigma-Aldrich.Four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine is that metal-salt selects Glacial acetic acid zinc, uses DBU Template synthesis, and solvent is Pentyl alcohol, and metal-salt is Dehydrated nickel chloride NiCl so that α-(4-sulfonic acid phenoxy group) phthalic nitrile is as presoma 2, temperature of reaction controls at 140 DEG C.The synthetic method of presoma α-(4-sulfonic acid phenoxy group) phthalic nitrile is as follows: 3-nitro phthalic nitrile and 4-hydroxy benzenesulfonic acid feed intake by amount of substance 1:1, and Anhydrous potassium carbonate makes catalyzer, normal-temperature reaction 3-4 days under nitrogen protection.
Embodiment two: the present embodiment and embodiment one repeat the single to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling process of 1 ~ 10 step 2 respectively unlike step 3, obtain sulfonic phthalocyanin nickel-graphene composite thin film material.
Adopt the propagation process of uv-visible absorption spectra test 1 ~ 10 to layer α-PhSPcNi/PDDA/GO electrostatic self-assembled multilayer film, the wavelength region of measurement all regulates at 200-850nm.Fig. 1 is uv-visible absorption spectra, the absorption peak of as can be seen from the figure four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene oxide film material is at about 230nm and about 680nm, this illustrates that the UV-Vis spectrum of matrix material spectrally all embodies the characteristic peak of phthalocyanine and graphene oxide, all there is red shift to a certain degree in four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene oxide film material, it is aspectant tightly packed for illustrating that Phthalocyanine is assembled in the film compared with the maximum absorption band of the phthalocyanine aqueous solution.In addition, along with increasing of the film number of plies, film Q is with obtained the maximum absorption larger.Illustrating that electrostatic self-assembled provides to phthalocyanine-graphene oxide composite material is even, an orderly film deposition process.
Embodiment three: the present embodiment and embodiment one repeat the single to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling process of 20 step 2 respectively unlike step 3, obtain sulfonic phthalocyanin nickel-graphene composite thin film material.
Test the present embodiment 20 carries out Raman spectrum to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene oxide composite nonlinear optical film material, and optical maser wavelength is 458nm.As can be seen from the figure α-SLPcNi/PDDA/GO film is at 1372.7cm -1(D band) and at 1594.9cm -1(G band) place shows the main key band of Graphene two, and D peak is A 1grelevant with the order degree of Graphene; G peak is characteristic peak and the sp of Graphene 2the E of the carbon atom of hydridization 2graman active mould is relevant.Illustrate that α-SLPcNi/PDDA/GO Electrostatic Self-Assembled Films deposition has gone up GO molecule.
Embodiment four: the present embodiment and embodiment one repeat the single to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling process of 30 step 2 respectively unlike step 3, obtain sulfonic phthalocyanin nickel-graphene composite thin film material.
With the surface topography of phthalocyanine-graphene oxide composite material under its yardstick of 20 μm of atomic force microscope observation, choose 30 and enter to observe in 2 × 2um region on layer α-PhSPcNi/PDDA thin-film material, provide its atomic power orthographic plan and three-dimensional image.From Fig. 2 and Fig. 3, clearly see that substrate defines closelypacked pointed nanoparticle, particle distribution is more even.The large chip architecture of Graphene and particle distribution is homogeneous, smooth, roughness is 13.529nm, mean diameter 3.09um, in Electrostatic Self-Assembled Films deposition process, defines metal phthalocyanine and graphene molecules aggregate at substrate surface.
In opening Z surface sweeping test, YAG laser is used as light source.Energy is 1.16 μ J, wavelength 532nm, pulse width is 4ns, metal phthalocyanine-graphene composite thin film material is fixed, the laser exported is penetrated on thin-film material, computer is used to collect data and goes forward side by side row relax, from the data Zolix SC300-2A motion controller that energy detector has been sent by.The numerical value of Z scanning, by matching, obtains Z scanning curve.The third-order nonlinear optical parameter of this α-SLPcNi/PDDA/GO film: third-order non-linear uptake factor β is 4.16 × 10 -5m/W, imaginary part Im χ (3)value is 1.51 × 10 -6esu.α-SLPcNi/PDDA/GO film is trough curve, masking polymer electrolyte PDDA and PSS used does not have Nonlinear Third-Order Optical Properties, the third-order nonlinear optical effect of α-SLPcNi/PDDA/GO film is that α-SLPcNi and GO produce, and shows that sample has good reverse saturated absorption characteristic.

Claims (9)

1. sulfonic phthalocyanin nickel-graphene composite thin film material, this sulfonic phthalocyanin nickel-graphene composite thin film material by the aqueous solution of phthalocyanine compound and graphene oxide with the method film forming of electrostatic self-assembled, wherein said phthalocyanine compound is charged four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine, and its structural formula is:
2. a kind of sulfonic phthalocyanin nickel-graphene composite thin film material according to claim 1, is characterized in that described graphene oxide adopts Hummers method to prepare.
3. a preparation method for sulfonic phthalocyanin nickel-graphene composite thin film material, it is characterized in that following these steps to realize:
One, pretreated quartz substrate is placed in PDDA solution immersion 8 ~ 10min that mass concentration is 10%, cleans with distilled water after taking-up, N 2being immersed in mass concentration after drying up again is 8 ~ 10min in the PSS solution of 10%, cleans, use N after taking-up with distilled water 2dry up, complete a PDDA-PSS immersion process, repeat PDDA-PSS immersion process three times, obtain the substrate with negative charge;
Two, PDDA solution immersion 8 ~ 10min that mass concentration is 10% put into by the substrate with negative charge step one obtained, and cleans, N after taking-up with distilled water 2be immersed in 8 ~ 10min in four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine aqueous solution after drying up, clean with distilled water after taking-up, N 2being immersed in mass concentration after drying up again is soak 8 ~ 10min in the PDDA solution of 10%, cleans, use N after taking-up with distilled water 2dry up and be finally immersed in 8 ~ 10min in graphene oxide water solution afterwards, clean with distilled water after taking-up, use N 2dry up, complete single to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling;
Three, repeatedly the list of step 2, to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling process, obtains sulfonic phthalocyanin nickel-graphene composite thin film material.
4. the preparation method of a kind of sulfonic phthalocyanin nickel-graphene composite thin film material according to claim 3, it is characterized in that the pretreated quartz substrate described in step one is that quartz substrate is first used acetone wiped clean, then 5min in the NaOH solution of 1mol/L is immersed, taking-up afterwash dries up, and obtains pretreated quartz substrate.
5. the preparation method of a kind of sulfonic phthalocyanin nickel-graphene composite thin film material according to claim 3, is characterized in that the concentration of four-α-(4-sulfonic acid phenoxy group) the Nickel Phthalocyanine aqueous solution described in step 2 is 0.8 ~ 1.5mg/ml.
6. the preparation method of a kind of sulfonic phthalocyanin nickel-graphene composite thin film material according to claim 5, is characterized in that the concentration of four-α-(4-sulfonic acid phenoxy group) the Nickel Phthalocyanine aqueous solution described in step 2 is 1mg/ml.
7. the preparation method of a kind of sulfonic phthalocyanin nickel-graphene composite thin film material according to claim 3, is characterized in that the concentration of the graphene oxide water solution described in step 2 is 0.08 ~ 0.15mg/ml.
8. the preparation method of a kind of sulfonic phthalocyanin nickel-graphene composite thin film material according to claim 7, is characterized in that the concentration of the graphene oxide water solution described in step 2 is 0.1mg/ml.
9. the preparation method of a kind of sulfonic phthalocyanin nickel-graphene composite thin film material according to claim 3, is characterized in that step 3 repeats the single to layer four-α-(4-sulfonic acid phenoxy group) Nickel Phthalocyanine-graphene composite thin film assembling process of 15 ~ 30 step 2.
CN201510271089.XA 2015-05-25 2015-05-25 A kind of preparation method of sulfonic phthalocyanin nickel graphene composite thin film material Expired - Fee Related CN104891822B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510271089.XA CN104891822B (en) 2015-05-25 2015-05-25 A kind of preparation method of sulfonic phthalocyanin nickel graphene composite thin film material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510271089.XA CN104891822B (en) 2015-05-25 2015-05-25 A kind of preparation method of sulfonic phthalocyanin nickel graphene composite thin film material

Publications (2)

Publication Number Publication Date
CN104891822A true CN104891822A (en) 2015-09-09
CN104891822B CN104891822B (en) 2017-12-08

Family

ID=54024857

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510271089.XA Expired - Fee Related CN104891822B (en) 2015-05-25 2015-05-25 A kind of preparation method of sulfonic phthalocyanin nickel graphene composite thin film material

Country Status (1)

Country Link
CN (1) CN104891822B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109678143A (en) * 2019-03-04 2019-04-26 吉林大学 Hyperbranched rare earth phthalocyanine modification graphene oxide and its preparation and the application in lasing safety
CN110256450A (en) * 2019-06-28 2019-09-20 黑龙江大学 Phenyl ring substituted phthalocyanine/graphene oxide composite non-linear optical material and preparation method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101879795A (en) * 2010-06-08 2010-11-10 黑龙江大学 Phthalocyanine/TiO2 ordered film and preparation method thereof
WO2011115879A2 (en) * 2010-03-16 2011-09-22 Basf Se Method for marking polymer compositions containing graphite nanoplatelets
CN102489328A (en) * 2011-12-02 2012-06-13 东华大学 Carbon-loaded pyridine-nitrogen-modified cobalt-phthalocyanine catalyst, and preparation method and application thereof
CN102850360A (en) * 2012-09-20 2013-01-02 首都师范大学 Method for preparing graphene/metal phthalocyanine compound composite material through electrostatic assembly
CN103991257A (en) * 2014-05-16 2014-08-20 北京化工大学 Phthalocyanine-polyoxometallate third-order nonlinear optical self-assembled film and preparation method thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011115879A2 (en) * 2010-03-16 2011-09-22 Basf Se Method for marking polymer compositions containing graphite nanoplatelets
WO2011115879A3 (en) * 2010-03-16 2012-01-05 Basf Se Method for marking polymer compositions containing graphite nanoplatelets
CN101879795A (en) * 2010-06-08 2010-11-10 黑龙江大学 Phthalocyanine/TiO2 ordered film and preparation method thereof
CN102489328A (en) * 2011-12-02 2012-06-13 东华大学 Carbon-loaded pyridine-nitrogen-modified cobalt-phthalocyanine catalyst, and preparation method and application thereof
CN102850360A (en) * 2012-09-20 2013-01-02 首都师范大学 Method for preparing graphene/metal phthalocyanine compound composite material through electrostatic assembly
CN103991257A (en) * 2014-05-16 2014-08-20 北京化工大学 Phthalocyanine-polyoxometallate third-order nonlinear optical self-assembled film and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109678143A (en) * 2019-03-04 2019-04-26 吉林大学 Hyperbranched rare earth phthalocyanine modification graphene oxide and its preparation and the application in lasing safety
CN110256450A (en) * 2019-06-28 2019-09-20 黑龙江大学 Phenyl ring substituted phthalocyanine/graphene oxide composite non-linear optical material and preparation method thereof
CN110256450B (en) * 2019-06-28 2021-07-23 黑龙江大学 Benzene ring substituted phthalocyanine/graphene oxide composite nonlinear optical material and preparation method thereof

Also Published As

Publication number Publication date
CN104891822B (en) 2017-12-08

Similar Documents

Publication Publication Date Title
Guldi Biomimetic assemblies of carbon nanostructures for photochemical energy conversion
Bernardi et al. Nanocarbon-based photovoltaics
Yang et al. Toward high-performance polymer solar cells: The importance of morphology control
CN104898346B (en) A kind of metal-free phthalocyanine-graphene oxide composite nonlinear optical film material and preparation method thereof
Liu et al. Buried interface molecular hybrid for inverted perovskite solar cells
Huang et al. Spectroscopic properties of nanotube–chromophore hybrids
CN108012568A (en) Perovskite-based solar cell using graphene as transparent conductive electrode
Seo et al. Si microwire solar cells: improved efficiency with a conformal SiO2 layer
Ou et al. Enhanced light harvesting in flexible polymer solar cells: synergistic simulation of a plasmonic meta-mirror and a transparent silver mesowire electrode
Ren et al. Poly (carbazole phosphonic acid) as a versatile hole-transporting material for pin perovskite solar cells and modules
Chen et al. Nonlinear plexcitons: Excitons coupled with plasmons in two-photon absorption
Wan et al. Ionic liquid-assisted thermal decomposition synthesis of carbon dots and graphene-like carbon sheets for optoelectronic application
Zhao et al. Surface modification of SnO2 via MAPbI3 nanowires for a highly efficient non-fullerene acceptor-based organic solar cell
Liu et al. Effects of nano-patterned versus simple flat active layers in upright organic photovoltaic devices
Li et al. Boosting solar-to-pyroelectric energy harvesting via a plasmon-enhanced solar-thermal conversion approach
Kim et al. Lead sulfide nanocrystal quantum dot solar cells with trenched ZnO fabricated via nanoimprinting
CN110429181A (en) A kind of embellishing cathode interface material compositions, preparation method and application
CN104891822A (en) Sulfonic acid group phthalocyanine nickel-graphene oxide composite film material and preparation method thereof
Kar et al. Pathways for improving the photovoltaic efficiency of porphyrin and phosphorene antidot lattice nanocomposites: An insight from a theoretical study
Zhang et al. All-organic composite films for high flexibility and giant nonlinear optical limiting responses
Gensch et al. Correlating optical reflectance with the topology of aluminum nanocluster layers growing on partially conjugated diblock copolymer templates
Manibalan et al. Facile route of heterostructure CeO2–CuO nanocomposite as an efficient electron transport material for perovskite solar cells
Dai et al. PbS quantum dots prepared by pulsed laser deposition for photovoltaic applications and ligand effects on device performance
Kadam et al. Electrospun 1D TiO2 nanofibers for dye-sensitized solar cell application
Fan et al. Facile synthesis of silicon micropillar arrays using extreme ultraviolet lithography and Ag-assisted chemical etching method

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CB03 Change of inventor or designer information
CB03 Change of inventor or designer information

Inventor after: He Chunying

Inventor after: Zhao Cheng

Inventor after: Jiang Enjing

Inventor after: Chen Bowen

Inventor after: Wang Zhao

Inventor after: Li Zongle

Inventor before: He Chunying

Inventor before: Jiang Enjing

Inventor before: Chen Bowen

Inventor before: Wang Zhao

Inventor before: Zhao Cheng

Inventor before: Li Zongle

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20171208

Termination date: 20190525