CN104885155A - Aluminum substrate for magnetic recording medium - Google Patents

Aluminum substrate for magnetic recording medium Download PDF

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Publication number
CN104885155A
CN104885155A CN201380068291.1A CN201380068291A CN104885155A CN 104885155 A CN104885155 A CN 104885155A CN 201380068291 A CN201380068291 A CN 201380068291A CN 104885155 A CN104885155 A CN 104885155A
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film
sio
temperature
aluminium base
film forming
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CN104885155B (en
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铃木哲雄
藤原直也
平野贵之
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Kobe Steel Ltd
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Kobe Steel Ltd
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/739—Magnetic recording media substrates
    • G11B5/73911—Inorganic substrates
    • G11B5/73913—Composites or coated substrates
    • G11B5/73915—Silicon compound based coating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/739—Magnetic recording media substrates
    • G11B5/73911—Inorganic substrates
    • G11B5/73917—Metallic substrates, i.e. elemental metal or metal alloy substrates
    • G11B5/73919—Aluminium or titanium elemental or alloy substrates

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Magnetic Record Carriers (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The invention provides an aluminum substrate for a magnetic recording medium, and the aluminum substrate has an SiO2 film formed thereon, said SiO2 film has a thickness of 6 [mu]m or more, and the aluminum substrate is characterized in that the SiO2 film is formed by means of a vapor-phase film forming method by heating the aluminum substrate to 150-370 DEG C.

Description

Magnetic recording media aluminium base
Technical field
The present invention relates to as magnetic recording media (disk) substrate use and at high temperature film forming have be applicable to formed magnetic film (recording layer) SiO 2the aluminium base of film.
Background technology
As information recording medium, magnetic recording media is the medium that versatility is high.As to the characteristic required by magnetic recording media, require hardness and flaw resistance excellence.Such as, during fabrication, sometimes impacted and magnetic head and magnetic recording media are come in contact when using, because of this contact etc. when magnetic recording media surface produces the physical imperfection such as flaw, pit, this defect becomes the poor prognostic cause of recording medium to magnetic recording media.Therefore, require that magnetic recording media has sufficient hardness and flaw resistance.
In addition, also require that the surface of magnetic recording media is level and smooth.Reading information to magnetic recording media record is undertaken by the magnetic head of movement on the recording medium, maximum only several about the nm in interval (levitation height of magnetic head) of magnetic head and magnetic recording media.Therefore, in order to prevent with the contact of magnetic head, record and read bad, magnetic recording media is required to the excellent surface flatness of sub-nanometer level.
As magnetic recording media substrate, there will be a known aluminium base, but during aluminium base individualism, hardness, flaw resistance are insufficient or be difficult to realize flatness by grinding.Therefore, the surperficial NiP plating aluminium base implemented without electrolysis NiP plating of aluminium base is used in.Hardness, the flaw resistance of NiP plating overlay film are also high, can realize excellent flatness by grinding.
NiP plating aluminium base manufactures as follows: coiled type aluminium sheet calendering manufactured is die-cut into discoideus, after in implementing, the lathe process of periphery and the grinding of first type surface process (attrition process), utilize electroless plating to carry out NiP plating, so carry out attrition process (polishing), cleaning manufacture (non-patent literature 1).
Such as; about the formation of magnetic recording media; NiP plating aluminium base is formed with soft magnetism backing layer, middle layer (crystal grain key-course, crystal orientation key-course etc.) etc., and film forming there is the magnetic film as recording layer thereon, and then be formed with sealer (hard carbon etc.).
In recent years, magnetic recording media is high capacity gradually, is developing the magnetic recording media of future generation improving recording density tremendously.Such as, when advancing the densification of magnetic recording media, need to make magnetic-particle generation miniaturization, the problem of this hot difference thus the part producing magnetic recording data disappears because of the heat affecting of surrounding, the magnetic recording media that the coercive force therefore proposing magnetic film is improved.But, when improving coercive force, be difficult to utilize existing magnetic head to record data, therefore, pay close attention to and utilize laser to add the thermal assisted recording mode that thermal recording media records data simultaneously.In this recording mode, the coercive force of the heating part of the magnetic film being formed with magnetic recording media is reduced, thus can record data, in addition, the coercive force of non-heated part is high, therefore, it is possible to eliminate hot difference.
In the manufacture process of magnetic recording media being suitable for this thermal assisted recording mode, the thermal history when film-forming temperature of magnetic film etc. manufacture reaches more than 300 DEG C and then reach more than 350 DEG C sometimes.Now general when being formed with the aluminium base of NiP plating overlay film, thermotolerance as the aluminium base of substrate is more than 370 DEG C, can crystallization be there is and possess magnetic in NiP plating overlay film when being heated to more than 300 DEG C, therefore in fact only can tackle about 300 DEG C, the heat resisting temperature of substrate becomes the obvious restriction of magnetic recording media manufacture view.
For this problem, attempt the thermotolerance (patent documentation 1) assigning to improve NiP plating overlay film by interpolation the three one-tenth, but be only the thermotolerance till about 320 DEG C at most, sufficient improved heat resistance effect cannot have been obtained.
Therefore, need to develop non magnetic and high rigidity and the substrate overlay film that flaw resistance is excellent and then thermotolerance is also excellent to replace the substrate overlay film of existing NiP plating.As the overlay film meeting this condition, be conceived to amorphous SiO 2film.
Such as, the SiO based on sol-gel process is proposed in patent documentation 2 2film.But when utilizing sol-gel process to carry out film forming, the Mass lost in this film forming procedure and volumetric contraction are comparatively large, are difficult to guarantee required thickness.
And then, propose the SiO utilizing sputtering method to carry out film forming about 0.6 μm in patent documentation 3 2the technology of film.Although surface accuracy, hardness, abrasion performance can be realized, be insufficient for realizing for flaw resistance when thickness is 0.6 μm.SiO is thickeied in order to improve flaw resistance 2during film, SiO 2the difference of the thermal expansivity of film and aluminium base is comparatively large, when being therefore exposed under hot environment, produces SiO 2film easily chaps this problem.
SiO 2from as non magnetic and have high heat resistance, but reality during film forming, can produce the problems such as be full of cracks as described above on aluminium base.Therefore, also the SiO that be full of cracks etc. has practicality can not be produced even if not yet provide being exposed under hot environment 2film.
On the other hand, about the thermotolerance of the aluminium base used in magnetic recording media self (mother metal), such as 5086 alloys (JIS H4000) etc. have the excellent high temperature thermotolerance of more than 300 DEG C, in addition in recent years, even if also proposed is about the 500 DEG C aluminium alloy base plates (patent documentation 4) that also can maintain surface smoothness etc.
Therefore, the SiO conformed to the aluminium base of these high heat resistance excellences if can realize 2film, then significantly can alleviate the restriction in magnetic recording field aluminium alloy base plate being applied to above-mentioned thermal assisted recording mode etc. and so on.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2012-195021 publication
Patent documentation 2: Jap.P. No. 2552682 publication
Patent documentation 3: Japanese Patent Publication 53-37202 publication
Patent documentation 4: Japanese Unexamined Patent Publication 2012-99179 publication
Non-patent literature
Non-patent literature 1: grinding stone processing association will, Vol.43, No.11, in November, 1999, p.475 ~ 479.
Summary of the invention
The present invention is conceived to situation as described above and carries out, and its object is to, provides the magnetic recording media aluminium base of thermotolerance, hardness, flaw resistance excellence.And then, the object of the invention is to, the grinding can carried out as required except these characteristics for reducing surfaceness, the magnetic recording media aluminium base that surface smoothness after grinding is also excellent are provided.
Solve above-mentioned problem and the magnetic recording media aluminium base of the present invention obtained is the SiO that film forming has thickness more than 6.0 μm 2the aluminium base of film, its purport is, aforementioned SiO 2aforementioned aluminium base is heated to 150 DEG C ~ 370 DEG C and utilizes gas phase membrane formation process and film forming by film.
Accompanying drawing explanation
Fig. 1 is the figure of the relation representing film forming time substrate temperature and [heat-resisting evaluation temperature-film forming time substrate temperature].
Fig. 2 represents various overlay film (test material 1 ~ 4(SiO 2film) and reference example 1,2(is without SiO 2film and NiP plating overlay film) with the figure of the relation of the flaw degree of depth.
Fig. 3 represents SiO 2siO before and after the grinding of film 2the figure of the surfaceness of film.
Fig. 4 represents film forming SiO 2surfaceness and the film forming on the aluminium base surface before film have SiO 2siO after film 2the figure of the change of the surfaceness of film.
Embodiment
Below, be described for embodiments of the present invention, in the present embodiment, " substrate temperature during film forming " refers to film forming SiO 2the temperature of aluminium base during film self is on substrate, arrange the substrate temperature that thermoelectricity measures occasionally.In this instructions, sometimes by " substrate temperature during film forming " referred to as " film-forming temperature " or " substrate temperature ".
In addition, " substrate temperature during heating " refers to the temperature of the substrate self when being exposed under hot environment in the manufacture process forming the magnetic recording media such as magnetic film, sealer, is the substrate temperature utilizing thermopair to record as described above.In this instructions, sometimes by " substrate temperature during heating " referred to as " heating-up temperature " or " heat-resisting evaluation temperature ".
And then " heating-up temperature is poor " refers to the temperature difference of above-mentioned " substrate temperature during heating " and " substrate temperature during film forming ".
It should be noted that, in present embodiment, owing to determining the temperature of substrate, therefore at film forming SiO 2design temperature and the substrate temperature (substrate temperature during heating) of device when film, magnetic film etc., atmosphere etc. are sometimes inconsistent.Such as, in an embodiment of the present invention, SiO is had in order to evaluate film forming 2the thermotolerance of the substrate of film, on substrate, thermopair is installed in advance, the relation of investigation heating in-furnace temperature and substrate temperature, the mode reaching the temperature of the thermal history simulating manufacture process with substrate temperature sets the temperature of heating furnace, and therefore the temperature of heating furnace is sometimes inconsistent with substrate temperature.
The present inventor etc. can substitute hardness, the flaw resistance of existing NiP plating overlay film degree for having, and outmatch the overlay film of the excellent heat resistance of NiP plating overlay film, are repeated further investigation.
In general, the thermal expansivity of aluminium (comprising fine aluminium, aluminium alloy) is approximately 24 × 10 -6about/K, known temperature rise 400 DEG C time exist about 1% line expand.On the other hand, SiO 2thermal expansivity be known as 1 × 10 -7~ 1 × 10 -6the thermal expansivity of about/K, SiO 2the line expansion phase of film is expanded to the degree of tens of/mono-for the line of aluminium.
The present inventor etc. carry out film forming SiO for utilizing various condition 2the aluminium base of film is studied.
First, by film forming SiO 2aluminium base temperature during film is set as that the SiO that film forming is thickness 3.5 μm is carried out in room temperature (25 DEG C) left and right 2film, is then inserted into when heating in electric furnace by aluminium base, known, when heating-up temperature (substrate temperature during heating) reaches about 250 DEG C, can produce SiO 2there is be full of cracks or SiO in film 2film the problem such as to peel off from aluminium base.
On the other hand, by SiO 2when the film forming time substrate temperature of film is increased to more than 150 DEG C, even if the heating-up temperature of substrate (heat-resisting evaluation temperature) reaches more than 300 DEG C also do not find SiO 2film chaps, peel off (No.3 ~ 24 of table 1).It can thus be appreciated that: in order to ensure the thermotolerances of more than 300 DEG C (substrate temperature during heating), substrate temperature during film forming is set to more than at least 150 DEG C.
Like this, at high temperature film forming has SiO 2the reason that can show the excellent high temperature thermotolerance of more than 300 DEG C (heat-resisting evaluation temperature) during film is considered as follows.
Also be subject to the impact of shape, size, SiO 2usually possess and easily rupture because of tensile force but be difficult to the character destroyed because of force of compression.Therefore can think: under the state that heated aluminium base, film forming has SiO as above 2during film, time till being cooled to room temperature from film-forming temperature, SiO 2film is in by the state compressed, because of SiO 2the difference in shrinkage of film and aluminium base and produce load (force of compression), but SiO 2the excellent in te pins of durability relative to force of compression of film, SiO 2film can not produce be full of cracks, peel off.
On the other hand, can think: the compressive SiO of effect at room temperature film forming in this wise 2when the aluminium base of film heats, cause SiO due to aluminium base generation thermal expansion 2film is stretched, the degree of having an effect with force of compression under room temperature correspondingly, to SiO 2to the direction generation effect that compressive state is relaxed till the film-forming temperature of film, therefore, in fact act on SiO 2the tensile force of film is relaxed, its result, SiO 2film is difficult to produce be full of cracks, peel off, and shows excellent thermotolerance.
That is, SiO 2the thermal expansion of film is mainly subject to the domination of the difference of heating-up temperature and film-forming temperature, when therefore at high temperature carrying out film forming, even if heat, does not act on SiO in fact from room temperature tensile force to film-forming temperature again 2film, when exceeding film-forming temperature ground heated substrates, in the scope till this film-forming temperature and heating-up temperature, tensile force can act on SiO 2film.Therefore can think: SiO 2during the film-forming temperature height of film, SiO 2the film-forming temperature of film and SiO 2the difference section of the heating-up temperature after film film forming can derive tensile force, therefore has SiO with at room temperature film forming 2the situation of film is compared, and is difficult to produce SiO because of above-mentioned coefficient of thermal expansion difference 2the be full of cracks of film, stripping.
In addition, along with substrate temperature during film forming uprises, the SiO under normal temperature is shown 2the tendency that the hardness of film also uprises.Such as, SiO when substrate temperature during film forming being set to 150 DEG C 2the hardness of film is 8.0Gpa, and along with substrate temperature uprises, hardness also reaches 8.4GPa(200 DEG C), 8.8Gpa(250 DEG C) (No.13 ~ 18).Also meet same tendency when thickness is different, such as, when thickness is set to 10.5 μm, (No.19 ~ 24) show the tendency (8.5GPa → 8.8GPa → 9.2GPa) that hardness also uprises along with the uprising (200 DEG C → 250 DEG C → 300 DEG C) of temperature similarly.
Therefore known: in order to give sufficient hardness, improve SiO 2the film-forming temperature of film.
And then known: SiO 2when the thickness of film is thinner, the function (flaw resistance) as the diaphragm on protection aluminium base surface is insufficient, needs thickness to a certain degree.Namely, in the example of thickness less than 6 μm (No.1 ~ 12), flaw resistance inequality, thickness is in the example of more than 6 μm, possesses the flaw resistance (No.13 and afterwards) of the level that can be met, especially thickness is in the example (No.19 ~ 24) of more than 10 μm, possesses more excellent flaw resistance.
The present invention completes based on above-mentioned opinion, and it has the SiO of thickness more than 6.0 μm for film forming 2the aluminium base of film, its purport is, aforementioned SiO 2aforementioned aluminium base is heated to 150 DEG C ~ 370 DEG C and utilizes gas phase membrane formation process and film forming by film.
Below, the formation for the magnetic recording media aluminium base of present embodiment illustrates.
[SiO 2the thickness of film: more than 6.0 μm]
Be formed at the SiO of aluminium base 2when the thickness of film is thinner, even if hardness its flaw resistance high is also insufficient, magnetic recording media easily produces defect.On the other hand, the SiO of thickness more than 6.0 μm is formed in the substrate temperature region when the film forming specified 2during film, though magnetic recording media surface during fabrication, use time impacted, also can give the abundant flaw resistance that can suppress the degree of the physical imperfection such as flaw, pit.Therefore, SiO 2the thickness of film needs to be more than 6.0 μm, is preferably more than 9.0 μm, is more preferably more than 10.0 μm.On the other hand, from the view point of flaw resistance, the upper limit of thickness is not particularly limited, SiO 2when the thickness of film becomes blocked up, as described later, the endurance of the drawing stress caused by thermal expansion is reduced, be therefore preferably less than 15.0 μm.
It should be noted that, in order to ensure the surface smoothness expected to SiO 2when film grinds, it is desirable that, the SiO of amount of grinding film forming to determine also will be considered 2the thickness of film, reaches above-mentioned scope to make the thickness after grinding.
[SiO 2aluminium base temperature during film film forming: 150 DEG C ~ 370 DEG C]
Film forming SiO is carried out lower than the temperature of 150 DEG C with the temperature of aluminium base 2during film, reach before 300 DEG C in the heating-up temperature of substrate, SiO sometimes 2film produces be full of cracks etc., therefore cannot give the heat resisting temperature i.e. thermotolerance of 300 DEG C more than NiP plating.On the other hand, when the temperature of aluminium base during film forming is more than 370 DEG C, intensity (pulling strengrth), 0.2% endurance of aluminium base self reduce, and therefore become bad to the substrate properties that magnetic recording media requires.Especially, when substrate temperature is more than 370 DEG C, the intensity of aluminium base is reduced to less than 1/4 of the intensity under room temperature, and aluminium base, in film forming, to deform in the cooling procedure after film forming or substrate surface produces concavo-convex.Its result, even if be cooled to room temperature, sometimes also cannot to SiO 2membrane interaction has sufficient force of compression.Therefore, when again heating, to SiO from the temperature lower than film-forming temperature 2film produces tensile force, sometimes cannot obtain the high heat resistance of expectation.
From the view point of raising thermotolerance, SiO 2better during the temperature height of aluminium base during film film forming, therefore aluminium base temperature is more than 150 DEG C, preferably more than 200 DEG C.In addition, when excessively improving the temperature of aluminium base, as mentioned above, the characteristics such as the intensity of aluminium base reduce, and are therefore less than 370 DEG C, are preferably less than 350 DEG C.
By utilizing gas phase membrane formation process to carry out film forming SiO with this temperature province under the state that the temperature of aluminium base is increased to 150 DEG C ~ 370 DEG C 2film, as mentioned above, can improve SiO 2the thermal expansion because of heating of film thus the tensile force caused start the temperature acted on, therefore, it is possible to prevent SiO 2the be full of cracks of film, stripping.
And then, in the present embodiment, SiO 2the film-forming temperature of film is by considering SiO 2the thickness of film and required heat resisting temperature (temperature during heating) determine it is also preferred embodiment.The present inventor etc. are for SiO 2the relation of the thickness of film, heating-up temperature difference ([substrate temperature during heating]-[substrate temperature during film forming]), thermotolerance is studied, and result is known: SiO 2the thickness of film becomes thicker or heating-up temperature is poor becomes larger, more can there is following tendency: relative to because of SiO 2the SiO that the heating-up temperature of film is poor and produce 2the difference of the thermal expansion of film and aluminium base and the endurance step-down of the tensile force caused, SiO 2film produces be full of cracks, peels off (table 1 and Fig. 1).Therefore, from the relation with above-mentioned film-forming temperature, drawing stress, in order to suppress the generation of the defects such as be full of cracks, expect suitably to control manufacturing condition.
Such as, in the example of thickness 6.1 μm (No.13 ~ 18 of table 1), in any situation that substrate temperature (" film forming time substrate temperature " in table 1) during film forming is in 150 DEG C, 200 DEG C, 250 DEG C, as long as heating-up temperature difference is (in table 1, " heat-resisting evaluation temperature-film forming time substrate temperature ") be the scope of 150 ~ 175 DEG C, just can obtain excellent thermotolerance (in table 1, " Evaluation of Heat Tolerance ") (No.13,15,17), when heating-up temperature difference is 200 DEG C, poor heat resistance (No.14,16,18).On the other hand, in the example of thickness 10.5 μm (No.19 ~ 24 of table 1), substrate temperature during film forming is in any situation in 200 DEG C, 250 DEG C, 300 DEG C, as long as heating-up temperature difference is the scope of 100 ~ 125 DEG C, just can obtain excellent thermotolerance (No.19,21,23), when heating-up temperature difference is 150 DEG C, poor heat resistance (No.20,22,24).Among these examples, be the No.15(thickness of 200 DEG C by substrate temperature during film forming: 6.1 μm) with No.19(thickness 10.5 μm) contrast time, even if in No.15, heating-up temperature difference is 175 DEG C and also can have given play to thermotolerance, but the temperature having given play to thermotolerance in No.19 is to 125 DEG C.Therefore, during No.15, substrate temperature during heating is (in table 1, " heat-resisting evaluation temperature ") to 375 DEG C, all there is thermotolerance, but be during No.19 to 325 DEG C, in order to give play to thermotolerance under the heating time substrate temperature (375 DEG C) equal with No.15, till needing that film forming time substrate temperature is increased to 250 DEG C (No.21).
This tendency as in Fig. 1 sum up shown in, such as, in order to the heating time substrate temperature with thermotolerance being made more than 350 DEG C (in Fig. 1, the right side of " 350 DEG C of lines "), SiO 2when the thickness of film is thickness 6.1 μm, substrate temperature during film forming is set to more than 200 DEG C, be more than 250 DEG C during thickness 10.5 μm, thickness becomes thicker, more there is substrate temperature when improving film forming, the poor tendency diminished of heating-up temperature.
Therefore, in order at high temperature give play to thermotolerance, it is desirable that, all the more thick SiO 2the thickness of film, substrate temperature when more improving film forming reduces itself and the difference heating time substrate temperature.
It should be noted that, for the relation of this thickness and heating-up temperature difference, as described above, do not exist only in substrate temperature during heating, as long as identical thickness then shows substantially identical tendency, therefore, in order to obtain thermotolerance with the heating time substrate temperature expected, substrate temperature during film forming is improved.
[SiO 2the hardness of film: be preferably more than 4.0GPa]
SiO 2the hardness of film is not particularly limited, and from the view point of raising aluminium base to the permanance of physical impact etc., desired hardness is high.In addition, in order to improve flaw resistance, be desirably in guarantee abundant hardness basis on thicken thickness.SiO 2the hardness of film is preferably more than 4.0GPa, is more preferably more than 7.0GPa.
It should be noted that, SiO 2there is SiO in the hardness of film 2the film forming time substrate temperature of film is higher, and hardness becomes higher tendency, therefore, in order to obtain with the scope of above-mentioned film forming time substrate temperature (150 DEG C ~ 370 DEG C) expect hardness and setting substrate temperature.
[SiO 2the film forming of film: gas phase membrane formation process]
And then, the SiO of present embodiment 2film utilizes gas phase membrane formation process and film forming.Owing to easily controlling thickness or easily evenly and the film forming of densification, therefore expect for gas phase membrane formation process.Gas phase membrane formation process refers to the physical vapor such as sputtering method, vapour deposition method method (PVD); The chemical gas-phase methods such as plasma CVD (CVD).Among these, because easy film forming is the expectation thickness of more than 6 μm, be therefore preferably chemical gas-phase method.And then, as chemical gas-phase method, be especially more preferably plasma CVD method.Owing to easily controlling film forming speed, therefore as the SiO expecting thickness 2the film build method of film and be suitably for plasma CVD method, and due to easily evenly and the film forming of densification, therefore easy by SiO 2the surface smoothness of film is adjusted to the scope of regulation, so preferably.
Especially, about surface smoothness, the reason being preferably plasma CVD method is as follows.That is, Fig. 4 represents SiO 2the roughness on the aluminium base surface before film film forming with utilize plasma CVD method film forming for SiO 2siO after film 2the figure of the general tendency of the roughness on film surface, in Fig. 4, " tracer method " is the result that the Intra using Taylor/Hobson company to manufacture for multiple sample records, " AMF1 " is the Nanosurf EasyScan(angle of visibility using Nano Science Instrument company to manufacture is 10 μm) result that records, " AMF2 " is the Nanosurf EasyScan(angle of visibility 2 μm using Nano Science Instrument company to manufacture) result that records.Can think: based on the SiO of any assay method 2surfaceness (center line surface roughness Ra (nm)) before and after the film forming of film is all roughly equal, is therefore utilizing plasma CVD method film forming for SiO 2during film, the surfaceness on the aluminium base surface before film forming is roughly reflected in the SiO after directly carrying out film forming 2the surfaceness on film surface.
But, this is because: as shown in aftermentioned embodiment, utilize the SiO of plasma CVD method institute film forming 2film easily utilizes the method for polishing surface of known glass substrate to grind, and surfaceness can be reduced to the value of expectation, easily can obtain excellent flatness (Fig. 3).
It should be noted that, utilize sputtering method to carry out film forming SiO 2during film, utilize reactive sputtering method to carry out the film forming speed of film forming soon, be practical, in described reactive sputtering method, Si be used for target, use and add O in Ar 2carrier gas, RF plasma, pulsed D C discharge plasma sputter.
In addition, vapour deposition method is utilized to carry out film forming SiO 2during film, by Si and SiO 2mixed-powder stove heat, be vaporized, by the O of trace with the form of the low SiO of sublimation temperature 2when being additional near substrate surface, SiO can be formed 2film.
Below, the manufacture method for the magnetic recording media aluminium base described in present embodiment is described.
First, aluminium base is prepared.The aluminium base (mother metal) used in present embodiment is not particularly limited, and preferably, the pulling strengrth under room temperature and 0.2% endurance and 5086 alloys are equal above aluminium base.The thickness of slab of aluminium base is not particularly limited, and can use the aluminium base of various thickness, usually suitably sets in the mode be processed into as the specific thickness required by magnetic recording media.Such as, the magnetic recording media aluminium base of φ 95mm can use the aluminium base of thickness 1.270mm or thickness 1.753mm, and in addition, the magnetic recording media aluminium base of φ 65mm can use the aluminium base of thickness 0.635mm or thickness 0.800mm.
Aluminium base is preferably die-cut into intended shape in advance and implements annealing in process.By implementing annealing in process, can removing by processing the strain caused, in addition, can also flatness be improved.
Above-mentioned aluminium base surface is formed with damaged surface layer because calendering waits, and it is therefore preferable that to utilize the face based on lathe to cut or grind the job operations such as processing or both combinations remove this damaged surface layer, makes aluminium base surface become level and smooth.In addition, when the surfaceness of aluminium base is excessive, even if to SiO 2film carries out grinding the surfaceness (surface smoothness) that also possibly cannot obtain expectation, therefore preferably makes surface become level and smooth.
Above-mentioned job operation is not particularly limited, and in general, can adopt the wet type grinding employing PVA grinding stone, the face employing diamond blade cuts.In addition, PVA grinding stone also can be used after face is cut to carry out wet type grinding.
The surfaceness of above-mentioned aluminium base is such as in JIS B0601(2001) in regulation center line average roughness Ra preferably below 20nm, be more preferably below 12nm.
[SiO 2the film forming of film]
In present embodiment, utilize gas phase membrane formation process to the SiO of aluminium base film forming more than 6.0 μm being heated to 150 DEG C ~ 370 DEG C 2film.
Such as, the chemical gas-phase method film forming SiO expected is utilized as gas phase membrane formation process 2during film, organosiloxane gas (molecular skeleton has the compound of Si-O-Si key) or silane gas and oxygen-containing gas can be used to carry out film forming on the aluminium base surface being heated to set point of temperature is SiO 2film.
In addition, in order to film forming be film quality well, namely fine and close and hard and level and smooth SiO 2film, preferably changes into SiO completely by the Si comprised in organosiloxane gas 2, for this reason, carrying out SiO 2during the film forming of film, recommendation changes into SiO relative to by the Si comprised in above-mentioned organosiloxane gas 2the chemical theory amount of required oxygen is the oxygen-containing gas of the amount of more than 1.2 times.In theory, use for the Si comprised in organosiloxane gas is changed into SiO 2during the oxygen-containing gas of required chemical theory amount, Si should change into SiO completely 2, but be in fact subject to the impact of loss of reaction, accessory substance etc.Therefore, in order to Si is changed into SiO completely 2, expect to use relative to the oxygen of chemical theory amount for excess quantity (being specifically more than 1.2 times).In present embodiment, the throughput ratio of oxygen when recommending to be above-mentioned scope by the flow control of oxygen-containing gas to make film forming reaches above-mentioned scope.
As above-mentioned organosiloxane, such as, can use HMDO (HMDSO), octamethyltrisiloxane etc., also can combinationally use them.Consider the SiO of suitable vapor pressure, security, acquisition easness, film forming speed and film forming 2during the hardness of film, preferably use HMDSO.
As above-mentioned silane gas, such as SiH can be used 4, SiHCl 3, SiH 2cl 2, SiH 3cl, SiCl 4, SiBr 4, SiI 4, SiF 4, Si(OC 2h 5) 2deng, also can combinationally use them.Among these, be particularly preferably SiH 4.
In addition, as above-mentioned oxygen-containing gas, O can be exemplified 2, N 2o etc.It should be noted that, oxygen-containing gas refer to also comprise its with for film forming SiO 2film and the H added as required 2the purport of the mixed gas of gas etc.Among these, be particularly preferably O 2, or N 2the mixed gas of O gas.
[about grinding (polishing) operation]
Preferably, the SiO after above-mentioned film forming 2the surfaceness of film is such as in JIS B0601(2001) in regulation center line average roughness Ra preferably below 0.5nm, be more preferably below 0.3nm.
But, as mentioned above, utilize plasma CVD method film forming for SiO 2during film, the surfaceness on aluminium base surface is directly with SiO 2the form of the surfaceness of film is reflected.Therefore, SiO 2the surface smoothness of film is also high, in order to alleviate SiO 2load needed for the grinding of film, it is desirable that, as described above, at SiO 2the flatness on aluminium base surface is improved in advance before the film forming of film.
In addition, after film forming to SiO 2when film grinds, utilize known condition to SiO 2the surface of film is ground, and reaches the smoothness (above-mentioned surfaceness) of above-mentioned expectation.The SiO of present embodiment 2in the grinding of film, directly can utilize the method for the abrading glass plate in the past used, its device etc.Such as, polishing pad and ground slurry is used to carry out wet lapping.Grinding pressure is such as set to 40 ~ 150gf/cm 2, about sliding speed is such as set to 40 ~ 160cm/ second.
[purposes]
The film forming of present embodiment has SiO 2the aluminium base of film can be suitably used as magnetic recording media.Especially, the film forming of present embodiment that thermotolerance is improved has SiO 2the aluminium base of film contributes to the restriction of the substrate temperature relaxed when forming magnetic film.The film forming of present embodiment is used to have SiO 2when the aluminium base of film manufactures magnetic recording media, can at the SiO of this aluminium base 2film utilizes known condition to form magnetic recording film etc. on the surface, forms diaphragm, lubricating film as required further to manufacture magnetic recording media.
This instructions discloses the technology of various mode as described above, and following such mode can be utilized to solve above-mentioned problem.Wherein, the present invention is not limited to following solution, can refer to all the elements recorded in this instructions needless to say.
A mode of the present invention and magnetic recording media aluminium base are the SiO that film forming has thickness more than 6.0 μm 2the aluminium base of film, is characterized in that, aforementioned SiO 2aforementioned aluminium base is heated to 150 DEG C ~ 370 DEG C and utilizes gas phase membrane formation process and film forming by film.
By this formation, on the aluminium base being heated to the temperature province specified, film forming has the SiO of regulation thickness 2film, therefore has the characteristic of non magnetic and thermotolerance (be preferably more than 300 DEG C, be more preferably more than 350 DEG C, more preferably more than 400 DEG C) and hardness (preferably more than 4.0GPa, be more preferably more than 7.0GPa) and flaw resistance (with NiP plating be preferably on an equal basis more than) excellence.And then, SiO of the present invention 2the grinding technique that film can apply existing glass substrate is used as the grinding means after film forming, by grinding, can provide the magnetic recording media aluminium base that surface smoothness is more excellent.
Therefore, film forming of the present invention has SiO 2the aluminium base of film is suitable as magnetic recording media, significantly can relax the restriction in magnetic recording field aluminium alloy base plate being used in thermal assisted recording mode etc. and so on.
In addition, in magnetic recording media aluminium base of the present invention, above-mentioned gas phase membrane formation process is preferably plasma CVD method.This is because: the SiO utilizing plasma CVD method film forming 2film easily utilizes the method for polishing surface of known glass substrate to grind, and surfaceness can be reduced to the value of expectation, easily can obtain excellent flatness.
Below, list embodiment to further illustrate present embodiment, but the present invention is not limited to following embodiment, can suitably add change in the scope being applicable to aforementioned aftermentioned purport needless to say and implement, they include in technical scope of the present invention.
Embodiment
Experiment 1
In experiment 1, investigate SiO 2the film-forming temperature of film and SiO 2the relation of the characteristic of film.
Aluminium base (aluminium alloy (4.2 quality %Mg-surplus: Al and inevitable impurity), size: external diameter 65mm, internal diameter 20mm, thickness are about the discoid dish of 0.84mm) is carried out grinding with PVA grinding stone, utilizes calendering and remove metamorphic layer.The 16B double-side processing machine that grinding processing uses Speed Fam company to manufacture, with grinding pressure: 80gf/cm 2, sliding speed: 80cm/ carries out second, the removal amount of one side is set to about about 20 μm, and the mode reaching 0.800mm with the aluminium base thickness after grinding sets.When utilizing tracer method to measure the surfaceness of the aluminium base after grinding, Ra=12nm.Thereafter, substrate temperature during film forming is changed between 80 DEG C ~ 350 DEG C, (in table 1, " film forming time substrate temperature (DEG C) "), utilize the plasma CVD method film forming of following condition for the SiO of thickness 3.5 μm ~ 10.5 μm simultaneously 2film.Now, substrate temperature during film forming uses the aluminium base being provided with thermopair in advance to obtain the design temperature of film formation device and the relevant of substrate temperature, and the mode reaching set point of temperature with substrate temperature during film forming according to it controls.After film forming, let cool and obtain there is SiO at aluminium base surface filming to room temperature 2the test material of film.
(membrance casting condition of plasma CVD method)
Carrier gas: the mixed gas of monosilane and nitrogen and nitrous oxide
Gas compares: SiH 4/ N 2=1/9 flow: 80sccm, N 2o flow: 56sccm
Pressure: 133Pa
RF power: 150W.
(SiO 2the surface texture of film)
At room temperature inquiry agency obtains the surface texture of each test material.The SiO of each test material of visual confirmation 2film whether produce be full of cracks, with the stripping of substrate.Its result, the test material do not produce be full of cracks, peeling off, the surface texture of all test materials is good.
(SiO 2the thickness of film)
The SiO of each test material 2the nanospec/AFTmodel5100 that the thickness of film uses nanometrics company to manufacture measures.
(SiO 2the hardness of film)
Using Nanoindentation is utilized to measure the SiO of each test material 2the hardness of film.Specifically, nano impress machine (the Nano Indenter XP/DCM that Agilent Technology company manufactures) is used to measure.Measure with excited vibrational number: 45Hz, excited vibrational amplitude: 2nm, rate of straining: 0.05/ second, compression distance: 2000nm carries out.
(Evaluation of Heat Tolerance)
In order to evaluate thermotolerance, use the substrate being provided with thermopair in advance, the investigation design temperature of heating furnace and the relevant of substrate temperature, set the temperature of heating furnace thus.In the heating furnace being heated to the corresponding temperature with evaluation temperature heat-resisting shown in table 1 (substrate temperature during heating), inserts test material, keep after 30 minutes, test material is taken out to stove and let cool to reaching room temperature (25 DEG C) outward.
After letting cool, the surface texture for the test material under room temperature is observed.Specifically, by visual and optical microscope under fluorescent lighting (multiplying power: 50 times and 200 times, at each one side for substrate inner peripheral portion, central portion, each arbitrary 5 places of peripheral part) investigate SiO 2film is with or without be full of cracks and aluminium base and SiO 2whether film is peeled off, and carries out evaluating (in table 1, " Evaluation of Heat Tolerance ") according to following benchmark.
Zero: do not find SiO 2there is be full of cracks, peel off in film
Zero note 1: do not find SiO 2there is be full of cracks, peel off in film, but heat resisting temperature is less than the example of 300 DEG C
× note 2: aluminium base produces distortion
×: find SiO 2there is be full of cracks, peel off in film.
It should be noted that, about heat-resisting evaluation temperature, heat up tens of DEG C from 250 DEG C at every turn and evaluate thermotolerance, the example of "○" evaluation represents the maximum temperature not finding to chap, peel off, and "×" evaluation represents the temperature finding be full of cracks, peel off.Such as, in No.13,14, the Evaluation of Heat Tolerance to 325 DEG C is "○" (No.13), so heat up 25 DEG C 350 DEG C time represent and become "×" (No.14).
(flaw resistance evaluation)
Make the leading section of the contact pilotage being applied with 10g or 50g load-carrying (the adamas ball of radius 0.1mm) contact test material surface (overlay film film forming face side) and make it slide.Sliding speed is set to constant speed (5mm/ second), sliding distance is set to 15mm.After slip, utilize non-contact optical roughmeter to carry out the degree of depth of the slip vestige of determination test material surface, evaluate according to following benchmark.
Zero: load-carrying 10g and 50g is the equal following flaw degree of depth with NiP plating
△: during load-carrying 10g be with NiP plating on an equal basis below, flaw during load-carrying 50g is darker than NiP plating
×: even if be load-carrying 10g, flaw is also darker than NiP plating
-: sufficient thermotolerance (Evaluation of Heat Tolerance "×") cannot be obtained, therefore do not evaluate flaw resistance.
Above-mentioned each test findings is shown in table 1.
[table 1]
In addition, the example that the "○" based on table 1 is evaluated, for SiO 2each thickness of film, is shown in Fig. 1 by film forming time substrate temperature and the relation of [heat-resisting evaluation temperature-film forming time substrate temperature].In Fig. 1, oblique line (" 300 DEG C of lines ", " 350 DEG C of lines ", " substrate deformation ") is corresponding to heat resisting temperature.
Meet the thermotolerance (heat-resisting evaluation temperature: more than 300 DEG C) of the thickness of present embodiment and No.13 ~ 24 of membrance casting condition, flaw resistance (more than △) and hardness (more than 4.0GPa) excellent.Especially, by SiO 2no.19 ~ 24 that the thickness of film is set to more than 10 μm can obtain more excellent flaw resistance compared with No.13 ~ 18 thickness being set to 6.1 μm.
On the other hand, the example not meeting essential condition of the present invention cannot obtain desired characteristic.
When substrate temperature (80 DEG C) during film forming is low (No.1,2), the thermotolerance (No.1) at 275 DEG C cannot be obtained, the high heat resistance (No.2) of more than 300 DEG C cannot be obtained.
In addition, SiO 2when the thickness (3.5 μm) of film is thin (No.3 ~ 12), the thermotolerance of more than 300 DEG C can be obtained, but flaw resistance is poor.
Experiment 2
In experiment 2, for SiO 2the relation of film and flaw resistance is investigated.
The aluminium base used in above-mentioned experiment 1 is heated to 250 DEG C, by SiO 2the thickness of film is set to 3.5 μm (test materials 1), 6.1 μm (test material 2), 9 μm (test material 3), 10.5 μm (test material 4), in addition, to operate equally with above-described embodiment 1, utilize plasma CVD method at the upper film forming SiO of aluminium alloy base plate (discoid dish) 2film, thus make test material.
For reference, having prepared non-film forming has the aluminium base of the overlay film used in above-mentioned experiment 1 as a reference example 1, and by NiP plating substrate as a reference example 2.
NiP plating carries out as follows: after carrying out degreasing (industrial group of upper village system: AD-68F), acid cleaning (industrial group of upper village system: AD-107F), zincate process (industrial group of upper village system: AD-301 F3-X), uses NiP plating process (industrial group of upper village system: ニ system デ Application HDX-7G and industrial group of upper village system: the mixed liquor of HDX-A) to carry out.Plating thickness is 10 μm.
(flaw resistance test)
Make the leading section of the contact pilotage being applied with 10g or 50g load-carrying (the adamas ball of radius 0.1mm) contact test material surface (overlay film film forming face side) and make it slide.Sliding speed is set to constant speed (5mm/ second), sliding distance is set to 15mm.After slip, non-contact optical roughmeter is utilized to carry out the degree of depth of the slip vestige of determination test material surface.Show the result in Fig. 2.
Following item as shown in Figure 2.First, by SiO 2the thickness of film is set to the slip vestige depth ratio reference example 1(aluminium alloy base plate of the test material 1 of 3.5 μm) better, but be worse than reference example 2(NiP plating substrate), not there is sufficient flaw resistance.
On the other hand, by SiO 2when the thickness of film is set to 6.1 μm (test materials 2), 9 μm (test material 3), 10.5 μm (test material 4), with reference example 1(aluminium alloy base plate) compared with there is excellent flaw resistance.In addition, when load-carrying is 10g, the slip vestige degree of depth of test material 2 ~ 4 and reference example 2 are equal, have excellent flaw resistance.And then known: when load-carrying is 50g, test material 2(thickness 6 μm) the slip vestige degree of depth and reference example 2 worsen, but test material 3(thickness 9 μm), test material 4(thickness 10.5 μm) slip vestige depth ratio reference example 2 good, there is more excellent flaw resistance.
Experiment 3
In experiment 3, whether investigation grinds SiO 2film is to the SiO of film forming on the surface of aluminium alloy base plate 2the impact that the surfaceness (center line average roughness Ra) of film causes.
By SiO 2the thickness of film is set to 7 μm, substrate temperature is set to 250 DEG C, in addition, the aluminium base used in above-mentioned experiment 1 utilizes plasma CVD method film forming SiO 2film manufactures test material.
Now, at film forming SiO 2before film, measure the surfaceness of the aluminium base that will use.First, as the surfaceness of aluminium base, utilize atomic force microscope (Atomic Force Microscope; AFM) center line average roughness Ra is measured.As AFM, employ " Nanosurf easyScan2 FlexAFM " (angle of visibility 2 μm) that Nano Science Instrument company manufactures.
It should be noted that, and center line average roughness Ra that above-mentioned center line average roughness Ra measures based on two dimension [JIS B0601(2001)] set condition determination.Measure the result of center line average roughness Ra, film forming SiO 2the center line average roughness Ra of the aluminium base before film is 8.9nm.
Then, the SiO of film forming on aluminium base is determined at 2the center line average roughness Ra of film.Its result, SiO 2the center line average roughness Ra of film is in 8.9nm(Fig. 3, " amount of grinding is 0 μm "), film forming SiO 2surfaceness before and after film is identical.
Then, muller (the 9B twin grinder that Speed Fam company manufactures) is utilized to grind SiO 2the surface of film.Grinding employs commercially available glass substrate polishing pad (the RN-H liner that ロ デ ー Le ニ ッ タ company manufactures) and ground slurry (Compol 20 ground slurry that Off ジ ミ company manufactures).It should be noted that, condition during grinding is grinding pressure 100gf/cm 2, sliding speed 60cm/ second, amount of grinding supposes the density (2.2g/cm of silicon dioxide film by the weight change before and after grinding 3) estimate.
By SiO 2it is 0.45nm that film grinds the center line average roughness Ra measured after 0.39 μm, significantly can improve SiO by grinding 2the surface smoothness of film film forming.
And then, by SiO 2it is 0.27nm that film grinds the center line average roughness Ra measured after 0.60 μm, by application glass substrate Ginding process, can confirm to obtain fully level and smooth face.
The Japanese patent application laid that this application was submitted to by Dec 27th, 2012 is willing to based on 2012-285760, its content is comprised in this application.
In order to describe the present invention, reference accompanying drawing etc. in foregoing teachings also utilize embodiment suitably and sufficiently illustrate the present invention, but should be realized that, as long as those skilled in the art, just can easily change aforementioned embodiments and/or improve.Therefore, as long as the enforceable alter mode of those skilled in the art or mode of ameliorating are in the level of interest field not departing from the claim that claims are recorded, be then interpreted as this alter mode or this mode of ameliorating is included in the interest field of this claim.
Industry applications
The present invention has industry applications widely in the correlative technology field relating to aluminium base, especially magnetic recording media aluminium base and manufacture method thereof.

Claims (3)

1. magnetic recording media aluminium base, it has the SiO of thickness more than 6.0 μm for film forming 2the aluminium base of film, is characterized in that,
Described aluminium base is heated to 150 DEG C ~ 370 DEG C and utilizes gas phase membrane formation process and film forming by described SiO film.
2. aluminium base according to claim 1, wherein, described gas phase membrane formation process is plasma CVD method.
3. magnetic recording media aluminium base according to claim 1 and 2, wherein, described SiO 2the thickness of film is less than 15.0 μm.
CN201380068291.1A 2012-12-27 2013-12-11 Magnetic recording media aluminum substrate Expired - Fee Related CN104885155B (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5337202B2 (en) * 1974-10-24 1978-10-07
CN1692084A (en) * 2002-11-07 2005-11-02 Hoya株式会社 Substrate for information recording medium, information reocrding medium and method for manufacturing same
US20070264533A1 (en) * 2006-05-15 2007-11-15 Fuji Electric Device Technology Co., Ltd Information recording medium glass substrate and information recording medium
US20090239035A1 (en) * 2007-03-23 2009-09-24 Asahi Glass Company Limited Substrate glass for data storage medium and glass substrate

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04362510A (en) * 1991-06-07 1992-12-15 Sony Corp Magnetic disk
JPH05307747A (en) * 1992-04-30 1993-11-19 Sony Corp Magnetic disk
JP2000030245A (en) * 1998-05-06 2000-01-28 Hitachi Koki Co Ltd Magnetic recording medium and magnetic recorder
JP2004253103A (en) * 2002-12-24 2004-09-09 Fujitsu Ltd Recording medium substrate and manufacturing method therefor
JP5681580B2 (en) * 2011-07-08 2015-03-11 株式会社神戸製鋼所 Method for manufacturing aluminum substrate for magnetic recording medium

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5337202B2 (en) * 1974-10-24 1978-10-07
CN1692084A (en) * 2002-11-07 2005-11-02 Hoya株式会社 Substrate for information recording medium, information reocrding medium and method for manufacturing same
US20070264533A1 (en) * 2006-05-15 2007-11-15 Fuji Electric Device Technology Co., Ltd Information recording medium glass substrate and information recording medium
US20090239035A1 (en) * 2007-03-23 2009-09-24 Asahi Glass Company Limited Substrate glass for data storage medium and glass substrate

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