CN104882540B - Molecular plane parallel to Si/SiO2Preparation method of porphyrin monomolecular layer on surface - Google Patents
Molecular plane parallel to Si/SiO2Preparation method of porphyrin monomolecular layer on surface Download PDFInfo
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- 150000004032 porphyrins Chemical class 0.000 title claims abstract description 34
- 238000000034 method Methods 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 229910004298 SiO 2 Inorganic materials 0.000 claims abstract description 13
- 239000000126 substance Substances 0.000 claims abstract description 9
- 239000010409 thin film Substances 0.000 claims abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 claims abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052681 coesite Inorganic materials 0.000 claims description 8
- 229910052906 cristobalite Inorganic materials 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 229910052682 stishovite Inorganic materials 0.000 claims description 8
- 229910052905 tridymite Inorganic materials 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- 125000000524 functional group Chemical group 0.000 claims 2
- 125000001841 imino group Chemical group [H]N=* 0.000 claims 2
- 229910004283 SiO 4 Inorganic materials 0.000 claims 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 1
- 239000010410 layer Substances 0.000 abstract description 11
- 239000002356 single layer Substances 0.000 abstract description 9
- 238000001338 self-assembly Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 abstract 1
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 32
- -1 alkyl organosilanes Chemical class 0.000 description 31
- 239000010408 film Substances 0.000 description 18
- 238000002390 rotary evaporation Methods 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000010992 reflux Methods 0.000 description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 238000002360 preparation method Methods 0.000 description 13
- 238000005481 NMR spectroscopy Methods 0.000 description 12
- 238000000655 nuclear magnetic resonance spectrum Methods 0.000 description 11
- 239000002904 solvent Substances 0.000 description 11
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 10
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 239000000243 solution Substances 0.000 description 9
- 239000011368 organic material Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 6
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 239000012153 distilled water Substances 0.000 description 6
- 235000012239 silicon dioxide Nutrition 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- XQCCNZFHLCQXEP-UHFFFAOYSA-N 4-(3-bromopropoxy)benzaldehyde Chemical compound BrCCCOC1=CC=C(C=O)C=C1 XQCCNZFHLCQXEP-UHFFFAOYSA-N 0.000 description 3
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 3
- 235000019341 magnesium sulphate Nutrition 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012074 organic phase Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 150000003573 thiols Chemical class 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- RGHHSNMVTDWUBI-UHFFFAOYSA-N 4-hydroxybenzaldehyde Chemical compound OC1=CC=C(C=O)C=C1 RGHHSNMVTDWUBI-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- UIIMBOGNXHQVGW-UHFFFAOYSA-M Sodium bicarbonate Chemical compound [Na+].OC([O-])=O UIIMBOGNXHQVGW-UHFFFAOYSA-M 0.000 description 2
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 239000013067 intermediate product Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- 239000003208 petroleum Substances 0.000 description 2
- 239000002094 self assembled monolayer Substances 0.000 description 2
- 239000013545 self-assembled monolayer Substances 0.000 description 2
- UGNWTBMOAKPKBL-UHFFFAOYSA-N tetrachloro-1,4-benzoquinone Chemical compound ClC1=C(Cl)C(=O)C(Cl)=C(Cl)C1=O UGNWTBMOAKPKBL-UHFFFAOYSA-N 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- VEFLKXRACNJHOV-UHFFFAOYSA-N 1,3-dibromopropane Chemical compound BrCCCBr VEFLKXRACNJHOV-UHFFFAOYSA-N 0.000 description 1
- 101100001669 Emericella variicolor andD gene Proteins 0.000 description 1
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 1
- 238000000026 X-ray photoelectron spectrum Methods 0.000 description 1
- BXAGUJYMKLFDEM-UHFFFAOYSA-N [N]1C2=CC=C1C=C(N1)C=C(S)C1=CC([N]1)=CC=C1C=C(N1)C=CC1=C2 Chemical class [N]1C2=CC=C1C=C(N1)C=C(S)C1=CC([N]1)=CC=C1C=C(N1)C=CC1=C2 BXAGUJYMKLFDEM-UHFFFAOYSA-N 0.000 description 1
- RNGSTWPRDROEIW-UHFFFAOYSA-N [Ni].N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 Chemical compound [Ni].N1C(C=C2N=C(C=C3NC(=C4)C=C3)C=C2)=CC=C1C=C1C=CC4=N1 RNGSTWPRDROEIW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013086 organic photovoltaic Methods 0.000 description 1
- 150000001282 organosilanes Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000425 proton nuclear magnetic resonance spectrum Methods 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- 229910000030 sodium bicarbonate Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 125000003396 thiol group Chemical group [H]S* 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- Nitrogen Condensed Heterocyclic Rings (AREA)
Abstract
有机薄膜晶体管(OTFT)中的电荷传输发生在绝缘层/半导体层界面附近的几个分子层,因此这个界面层的性质对于器件的性能起着决定性的作用。本发明利用自组装、表面化学增长的办法在Si/SiO2衬底上制备卟啉单分子层,使其大环平面平行于衬底表面;通过使用不同金属离子(Zn2+,Fe2+,Cu2+,Ni2+,Co2+)形成的具有丰富电子结构的卟啉单分子层来调节Si/SiO2表面电势与电荷分布;提供一种有效制备有机分子face‑on排列的方法,进而研究face‑on排列对器件性能的影响。Charge transport in organic thin-film transistors (OTFTs) occurs in several molecular layers near the insulating/semiconductor layer interface, so the properties of this interface layer play a decisive role in the performance of the device. The present invention utilizes the methods of self-assembly and surface chemical growth to prepare a porphyrin monolayer on a Si/SiO 2 substrate, so that the macrocyclic plane is parallel to the substrate surface; by using different metal ions (Zn 2+ , Fe 2+ , Cu 2+ , Ni 2+ , Co 2+ ) form a porphyrin monolayer with rich electronic structure to adjust the surface potential and charge distribution of Si/SiO 2 ; provide an effective method for preparing organic molecule face‑on arrangement , and then study the effect of face‑on arrangement on device performance.
Description
技术领域technical field
有机薄膜晶体管(OTFT)中的电荷传输发生在绝缘层/半导体层界面附近的几个分子层,因此这个界面的性质对于器件的性能起着决定性的作用。本发明利用化学自组装工艺对 Si/SiO2基底进行表面修饰,改变Si/SiO2基底表面的性质,从而有效控制有机分子按照face-on 方式有序排列,研究分子face-on有序排列对器件性能的影响。Charge transport in organic thin-film transistors (OTFTs) occurs in several molecular layers near the insulating/semiconducting layer interface, so the properties of this interface play a decisive role in the performance of the device. The present invention uses the chemical self-assembly process to modify the surface of the Si/SiO 2 substrate to change the properties of the Si/SiO 2 substrate surface, thereby effectively controlling the orderly arrangement of organic molecules in a face-on manner, and studying the molecular face-on orderly arrangement. impact on device performance.
背景技术Background technique
相对于传统硅基薄膜晶体管(Si-TFT)存在高成本、环境污染等问题,有机薄膜晶体管 (OTFT)具有低成本、易加工、可大面积制造等优点,可应用于液晶显示、有机发光显示、有机光伏、射频识别技术及传感器等,受到学术界、工业界深入的研究。Compared with traditional silicon-based thin-film transistors (Si-TFTs), which have problems such as high cost and environmental pollution, organic thin-film transistors (OTFTs) have the advantages of low cost, easy processing, and large-area manufacturing, and can be applied to liquid crystal displays and organic light-emitting displays. , organic photovoltaics, radio frequency identification technology and sensors, etc., have been deeply researched by academia and industry.
在OTFT器件中,位于无机物衬底界面上的几个有机材料分子层是导电通道,有机分子的排列方式直接决定载流子传输能力、载流子密度、电极表面功函(M.P.Nikiforov,U.Zerweck, P.Milde,C.Loppacher,T.H.Park,H.T.Uyeda,M.J.Therien,L.Eng,andD.Bonnell,Nano Lett. 2008,8,110.),从而决定器件性能的好坏,因此制备有序排列、无缺陷、大晶粒的有机材料是就显得非常重要。有机分子有face-on(即分子平面平行于衬底平面)与edge-on(即分子平面与衬底平面有一个倾角)两种排列方式,研究face-on与edge-on排列方式对器件性能影响非常重要。In an OTFT device, several organic material molecular layers on the interface of the inorganic substrate are conductive channels, and the arrangement of organic molecules directly determines the carrier transport capability, carrier density, and electrode surface work function (M.P.Nikiforov, U .Zerweck, P.Milde, C.Loppacher, T.H.Park, H.T.Uyeda, M.J.Therien, L.Eng, andD.Bonnell, Nano Lett. 2008, 8, 110.), which determines the performance of the device, so the preparation has Orderly arrangement, defect-free, and large-grain organic materials are very important. There are two arrangements of organic molecules: face-on (that is, the molecular plane is parallel to the substrate plane) and edge-on (that is, the molecular plane and the substrate plane have an inclination angle). The effects of face-on and edge-on arrangements on device performance Impact is very important.
通常,有机材料直接在Si/SiO2表面形成的膜是按照edge-on方式排列。科研人员试图通过界面修饰来获得face-on排列。终端带有卤素的芳香的、烷基的organosilanes的自组装膜促使较多的pentacene分子采取face-on排列方式,但pentacene是以多晶形式排列(K.P.Pernstich, S.Haas,D.Oberhoff,C.Goldmann,D.J.Gundlach,B.Batlogg,A.N.Rashid,and G.Schitter,J. Appl.Phys.2004,96,6431.)。在卟啉环上的meso位置引入长的烷基链(n-C18H37)、羧基、吡啶基团(J.Otsuki,E.Nagamine,T.Kondo,K.Iwasaki,M.Asakawa,and K.Miyake,J.Am.Chem. Soc.2005,127,10400.),使得卟啉单层膜能够按照face-on方式排列。同样,在原子级平滑石墨电极(0001)上形成的单层膜分子是face-on(即分子平面平行于衬底平面)方式排列;但是,在单层膜上面继续沉积的有机材料,改变了排列方式,主要是以edge-on方式排列(F. Bussolotti,S.W.Han,Y.Honda,and R.Friedlein,Phys.Rew.B 2009,79,245410.),显然有机材料分子间的强π-π相互作用改变了其排列的方式。Usually, the films formed by organic materials directly on the surface of Si/SiO 2 are arranged in an edge-on manner. Researchers try to obtain face-on arrangement through interface modification. The self-assembled film of halogen-terminated aromatic and alkyl organosilanes promotes more pentacene molecules to adopt a face-on arrangement, but the pentacene is arranged in a polycrystalline form (KPPernstich, S.Haas, D.Oberhoff, C. Goldmann, DJ Gundlach, B. Batlogg, ANRashid, and G. Schitter, J. Appl. Phys. 2004, 96, 6431.). Introduction of long alkyl chains (nC 18 H 37 ), carboxyl, and pyridine groups (J.Otsuki, E.Nagamine, T.Kondo, K.Iwasaki, M.Asakawa, and K. Miyake, J.Am.Chem. Soc.2005, 127, 10400.), enabling porphyrin monolayers to be arranged in a face-on manner. Similarly, the monolayer film molecules formed on the atomically smooth graphite electrode (0001) are arranged in a face-on (that is, the molecular plane is parallel to the substrate plane); however, the organic materials that continue to be deposited on the monolayer film change the The arrangement is mainly in the edge-on arrangement (F. Bussolotti, SWHan, Y.Honda, and R.Friedlein, Phys.Rew.B 2009, 79, 245410.), obviously the strong π-π between molecules of organic materials Interactions change the way they are arranged.
而至今为止,制备大颗粒的、有机材料分子按照face-on方式排列的OTFT还未见报道。无机物衬底有着不同于有机材料的晶体结构,晶格常数或晶格对称性不一致,想要控制有机材料有序排列,首先需要减少无机物衬底不同晶格结构的影响。本项目利用自组装、化学生长等方法,利用强化学键将分子平面平行于衬底表面的porphyrin单分子层固定在Si/SiO2衬底上;然后利用其高度共轭的平面结构对沉积在上面的有机分子的强π-π相互作用力,控制有机分子按照face-on方式排列。So far, the preparation of OTFTs with large particles and organic material molecules arranged in a face-on manner has not been reported. Inorganic substrates have different crystal structures from organic materials, and the lattice constants or lattice symmetry are inconsistent. To control the orderly arrangement of organic materials, it is first necessary to reduce the influence of different lattice structures of inorganic substrates. This project uses methods such as self-assembly and chemical growth, and uses strong chemical bonds to fix the porphyrin monolayer with the molecular plane parallel to the substrate surface on the Si/SiO 2 substrate; then use its highly conjugated planar structure to deposit on it The strong π-π interaction force of organic molecules controls the arrangement of organic molecules in a face-on manner.
发明内容Contents of the invention
本发明的特征是提供一种通过化学键合的方法制备双层自组装膜的方法,在Si/SiO2无机物衬底上制备稳定的porphyrin(式2)单分子层,其大环结构平行于衬底表面。A feature of the present invention is to provide a method for preparing a double-layer self-assembled film by chemical bonding, and prepare a stable porphyrin (formula 2) monomolecular layer on Si/ SiO2 inorganic substance substrate, and its macrocyclic structure is parallel to substrate surface.
根据本发明的一个方面,提供一种用于形成双层自组装膜的方法,步骤包括:According to one aspect of the present invention, there is provided a method for forming a double-layer self-assembled film, the steps comprising:
1、maleimide organosilane(式1)、porphyrin(式2)两类化合物的合成1. Synthesis of two types of compounds, maleimide organosilane (formula 1) and porphyrin (formula 2)
式1:Formula 1:
式2:Formula 2:
2、分子平面平行于Si/SiO2表面的卟啉单分子层的制备2. Preparation of porphyrin monolayer with molecular plane parallel to Si/ SiO2 surface
(a)对Si/SiO2基底进行清洗及活化,以在其表面形成羟基基团;(a) cleaning and activating the Si/ SiO2 substrate to form hydroxyl groups on its surface;
(b)在Si/SiO2衬底上形成maleimide organosilane的自组装膜;(b) Formation of self-assembled films of maleimide organosilane on Si/ SiO2 substrates;
(c)利用表面化学生长的方法在maleimide organosilane的自组装膜上面接上porphyrin单分子层,使porphyrin大环结构平行于衬底表面,并且单分子层稳定。(c) A porphyrin monolayer is attached to the self-assembled film of maleimide organosilane by surface chemical growth, so that the porphyrin macrocycle structure is parallel to the substrate surface, and the monomolecular layer is stable.
附图说明Description of drawings
结合如下附图及详细描述将会更清楚的理解本发明的上述和其他特征及优点,其中:The above and other features and advantages of the present invention will be more clearly understood in conjunction with the following drawings and detailed description, wherein:
图1自组装流程示意图;Figure 1 Schematic diagram of the self-assembly process;
图2空白硅片水接触角测试示意图;Fig. 2 schematic diagram of water contact angle test of blank silicon wafer;
图3 maleimide organosilane(式1)自组装单分子层膜水接触角测试示意图;Fig. 3 maleimide organosilane (formula 1) self-assembled monolayer film water contact angle test schematic diagram;
图4 porphyrin(式2)自组装单分子层膜水接触角测试示意图;Fig. 4 schematic diagram of water contact angle test of porphyrin (formula 2) self-assembled monolayer film;
图5 N 1s的XPS示意图;Fig.5 XPS schematic diagram of N 1s;
图6 S 2P的XPS示意图;Figure 6 XPS schematic diagram of S 2P;
图7 maleimide organosilane核磁共振氢谱图;Figure 7 maleimide organosilane proton nuclear magnetic resonance spectrum;
图8 maleimide organosilane核磁共振碳谱图;Figure 8 maleimide organosilane carbon nuclear magnetic resonance spectrum;
图9 4-(3-溴丙氧基)苯甲醛核磁共振氢谱图;Figure 9 4-(3-bromopropoxy) benzaldehyde H NMR spectrum;
图10 4-(3-(硫代乙酰基)丙氧基)苯甲醛核磁共振氢谱图;Fig. 10 4-(3-(thioacetyl) propoxy) benzaldehyde H NMR spectrum;
图11 5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)卟啉核磁共振氢谱图;Fig. 11 5,10,15,20-tetra(4-(3-thioacetylpropoxy)phenyl)porphyrin H NMR spectrum;
图12 5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)卟啉核磁共振碳谱图;Figure 12 5,10,15,20-Tetrakis(4-(3-thioacetylpropoxy)phenyl)porphyrin carbon nuclear magnetic resonance spectrum;
图13 5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)钴卟啉核磁共振氢谱图;Fig. 13 5,10,15,20-tetrakis(4-(3-thioacetylpropoxy)phenyl)cobalt porphyrin H NMR spectrum;
图14 5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)镍卟啉核磁共振氢谱图;Fig. 14 5,10,15,20-tetra(4-(3-thioacetylpropoxy)phenyl)nickel porphyrin H NMR spectrum;
图15 5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)铜卟啉核磁共振氢谱图;Figure 15 5,10,15,20-Tetrakis (4-(3-thioacetylpropoxy)phenyl) copper porphyrin H NMR spectrum;
图16 5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)锌卟啉核磁共振氢谱图;Fig. 16 5,10,15,20-tetra(4-(3-thioacetylpropoxy)phenyl)zinc porphyrin H NMR spectrum;
图17 5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)铁卟啉核磁共振氢谱图;Figure 17 5,10,15,20-Tetrakis(4-(3-thioacetylpropoxy)phenyl)iron porphyrin H NMR spectrum;
图18 5,10,15,20-四(4-(3-巯基丙氧基)苯基)镍卟啉核磁共振氢谱图。Figure 18 5,10,15,20-Tetrakis(4-(3-mercaptopropoxy)phenyl)nickel porphyrin H NMR spectra.
优选实施方案的详细说明Detailed Description of the Preferred Embodiment
下面对本发明的优选实施例进行详细阐述,以使本发明的优点和特征能更易于被本领域技术人员理解。Preferred embodiments of the present invention are described in detail below, so that the advantages and features of the present invention can be more easily understood by those skilled in the art.
实例1:Example 1:
(1)自组装材料maleimide organosilane的合成。(1) Synthesis of self-assembly material maleimide organosilane.
在500ml的烧瓶中加入200ml的干燥的二氯甲烷以及1.73g(17.6mmol)的顺丁烯二酸酐,氮气保护,搅拌。将3.90g(17.6mmol)的3-氨基丙基三乙氧基硅烷溶解于20ml干燥的二氯甲烷中,加入烧瓶中,室温搅拌1h。旋蒸除去溶剂,得到白色粉末状中间产物,干燥,称重。Add 200 ml of dry dichloromethane and 1.73 g (17.6 mmol) of maleic anhydride into a 500 ml flask, and stir under nitrogen protection. 3.90g (17.6mmol) of 3-aminopropyltriethoxysilane was dissolved in 20ml of dry dichloromethane, added to the flask, and stirred at room temperature for 1h. The solvent was removed by rotary evaporation to obtain a white powdery intermediate product, which was dried and weighed.
在250ml的烧瓶中加入200ml的干燥的甲苯以及上述所得白色中间产物,N2保护。取2.40g(17.6mmol)ZnCl2,立即加入到反应体系中,升温到80℃。最后将2.84g(17.6mmol)的六甲基二硅亚胺溶解在20ml的甲苯中,逐滴加入到反应体系中,反应5h。冷却到室温,过滤除掉ZnCl2,旋蒸除去溶剂,得到无色油状液体,产率50%。1H NMR(400MHz;CDCl3):δ6.66(2H,s),3.77(6H,m),3.48(2H,t),1.65(2H,m),1.19(9H,t),0.56(2H,t).13C NMR(400MHz):δ170.94,134.12,58.54,40.51,22.22,18.35,7.85.Add 200 ml of dry toluene and the white intermediate product obtained above into a 250 ml flask, and protect with N 2 . Take 2.40g (17.6mmol) ZnCl 2 , add it into the reaction system immediately, and raise the temperature to 80°C. Finally, 2.84 g (17.6 mmol) of hexamethyldisiloxane was dissolved in 20 ml of toluene, and added dropwise to the reaction system, and reacted for 5 h. After cooling to room temperature, ZnCl 2 was removed by filtration, and the solvent was removed by rotary evaporation to obtain a colorless oily liquid with a yield of 50%. 1 H NMR (400MHz; CDCl 3 ): δ6.66(2H, s), 3.77(6H, m), 3.48(2H, t), 1.65(2H, m), 1.19(9H, t), 0.56(2H , t). 13 C NMR (400MHz): δ170.94, 134.12, 58.54, 40.51, 22.22, 18.35, 7.85.
(2)自组装材料porphyrin(式2)的合成。(2) Synthesis of self-assembled material porphyrin (Formula 2).
4-(3-溴丙氧基)苯甲醛的制备:The preparation of 4-(3-bromopropoxy)benzaldehyde:
将2.46g(12.2mmol)1,3-二溴丙烷、0.5g(4.1mmol)对羟基苯甲醛、0.428g(6.1mmol) K2CO3加入装有30ml丙酮的烧瓶中,N2保护。在80℃下搅拌1h,反应结束后,停止加热,将体系冷却到0℃。旋蒸除去溶剂,加入少量的蒸馏水,用氯仿萃取三次,合并有机相,加入适量无水MgSO4干燥,静置半小时后,过滤除去MgSO4,旋蒸除去氯仿,层析柱分离提纯(乙酸乙酯∶石油醚=1∶4),得到无色油状液体,产率51%。1H NMR(400MHz;CDCl3):δ9.89(1H,s),7.83(2H,d),7.00(2H,d),4.20(2H,t),3.61(2H,t),2.36(2H,m).Add 2.46g (12.2mmol) of 1,3-dibromopropane, 0.5g (4.1mmol) of p-hydroxybenzaldehyde, and 0.428g (6.1mmol) of K 2 CO 3 into a flask containing 30ml of acetone, under N 2 protection. Stir at 80°C for 1 h, stop heating after the reaction, and cool the system to 0°C. Remove the solvent by rotary evaporation, add a small amount of distilled water, extract three times with chloroform, combine the organic phases, add an appropriate amount of anhydrous MgSO4 for drying, after standing for half an hour, remove MgSO4 by filtration, remove chloroform by rotary evaporation, and separate and purify by chromatography column (acetic acid ethyl ester:petroleum ether=1:4) to obtain a colorless oily liquid with a yield of 51%. 1 H NMR (400MHz; CDCl 3 ): δ9.89(1H, s), 7.83(2H, d), 7.00(2H, d), 4.20(2H, t), 3.61(2H, t), 2.36(2H , m).
4-(3-(硫代乙酰基)丙氧基)苯甲醛的制备:Preparation of 4-(3-(thioacetyl)propoxy)benzaldehyde:
0.729g(3mmol)4-(3-溴丙氧基)苯甲醛加入装有30ml DMF的烧瓶中,N2保护并冷却至0℃。0.342g(3mmol)KSAc溶于5ml DMF,在30min内滴加入反应体系,室温搅3 h。反应结束后,旋蒸除去DMF,加入少量的水,用氯仿萃取3次,反应瓶中剩余的残渣,加入少量水溶解后用氯仿萃取3次,合并有机相,加入适量无水MgSO4,静置半小时。过滤除去MgSO4,旋蒸除去氯仿,层析柱分离提纯(乙酸乙酯∶石油醚=1∶4),得到白色固体,产率93%。1H NMR(400MHz;CDCl3):δ9.91(1H,s),7.84(2H,d),7.00(2H,d),4.12(2H,t), 3.09(2H,t),2.37(3H,s),2.13(2H,m).0.729g (3mmol) of 4-(3-bromopropoxy)benzaldehyde was added into a flask filled with 30ml of DMF, protected by N2 and cooled to 0°C. 0.342g (3mmol) KSAc was dissolved in 5ml DMF, added dropwise to the reaction system within 30min, and stirred at room temperature for 3h. After the reaction, DMF was removed by rotary evaporation, a small amount of water was added, extracted three times with chloroform, the remaining residue in the reaction bottle was dissolved by adding a small amount of water and extracted three times with chloroform, the organic phases were combined, an appropriate amount of anhydrous MgSO 4 was added, and static Set aside for half an hour. MgSO 4 was removed by filtration, chloroform was removed by rotary evaporation, and column separation and purification (ethyl acetate:petroleum ether=1:4) yielded a white solid with a yield of 93%. 1 H NMR (400MHz; CDCl 3 ): δ9.91(1H, s), 7.84(2H, d), 7.00(2H, d), 4.12(2H, t), 3.09(2H, t), 2.37(3H , s), 2.13(2H, m).
5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)卟啉的制备:Preparation of 5,10,15,20-tetrakis(4-(3-thioacetylpropoxy)phenyl)porphyrin:
将新蒸吡咯0.067g(1mmol)与0.238g(1mmol)4-(3-(硫代乙酰基)丙氧基)苯甲醛溶于装有30ml CH2Cl2的烧瓶中,N2保护。0.114g(1mmol)三氟乙酸溶于2ml CH2Cl2中,慢慢加入反应体系,黑暗中搅拌1.5h后加入0.170g(0.75mmol)四氯苯醌(TCQ),回流1 h,反应结束。停止加热,将体系冷却至室温后,加入适量三乙胺,静置半小时后过滤,旋蒸除去溶剂,层析柱分离提纯,得到紫色固体,产率30%。1H NMR(400MHz;CDCl3):δ8.87(8H, s),8.13(8H,d),7.26(8H,d),4.30(8H,t),3.24(8H,t),2.43(12H,s),2.27(8H,m).13C NMR(400MHz):δ195.86,158.60,135.61,134.77,119.72,112.72,77.33,77.01,76.70,66.49,30.74,29.53, 26.08.Dissolve 0.067g (1mmol) of freshly distilled pyrrole and 0.238g (1mmol) of 4-(3-(thioacetyl)propoxy)benzaldehyde in a flask filled with 30ml of CH 2 Cl 2 and protect with N 2 . Dissolve 0.114g (1mmol) trifluoroacetic acid in 2ml CH2Cl2 , slowly add to the reaction system, stir in the dark for 1.5h, then add 0.170g (0.75mmol) tetrachlorobenzoquinone (TCQ), reflux for 1h, the reaction is over . Heating was stopped, the system was cooled to room temperature, an appropriate amount of triethylamine was added, it was allowed to stand for half an hour and then filtered, the solvent was removed by rotary evaporation, and the chromatographic column was separated and purified to obtain a purple solid with a yield of 30%. 1 H NMR (400MHz; CDCl 3 ): δ8.87(8H, s), 8.13(8H, d), 7.26(8H, d), 4.30(8H, t), 3.24(8H, t), 2.43(12H , s), 2.27 (8H, m). 13 C NMR (400MHz): δ195.86, 158.60, 135.61, 134.77, 119.72, 112.72, 77.33, 77.01, 76.70, 66.49, 30.74, 29.53, 26.08.
5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)钴卟啉的制备:Preparation of 5,10,15,20-tetrakis(4-(3-thioacetylpropoxy)phenyl)cobalt porphyrin:
将30mg(0.026mmol)卟啉溶于30ml氯仿中,N2保护,加热回流,将129.52mg(0.52mmol)Co(OAc)2·4H2O加入回流体系,加热回流5h,反应结束。体系冷却至室温,旋蒸除去氯仿,加入CH2Cl2将其溶解,用10%的NaHCO3溶液洗涤,再用蒸馏水洗涤2次,无水 MgSO4干燥,过滤,旋蒸除去溶剂,层析柱分离,得到红色固体,产率88%。1H NMR(400MHz; CDCl3):δ9.44(8H,br),5.55(8H,br),4.03(8H,br),3.13(8H,br),2.78(12H,br).Dissolve 30 mg (0.026 mmol) of porphyrin in 30 ml of chloroform, protect with N 2 , heat to reflux, add 129.52 mg (0.52 mmol) Co(OAc) 2 ·4H 2 O to the reflux system, heat to reflux for 5 h, and the reaction ends. The system was cooled to room temperature, chloroform was removed by rotary evaporation, dissolved by adding CH 2 Cl 2 , washed with 10% NaHCO 3 solution, washed twice with distilled water, dried with anhydrous MgSO 4 , filtered, and the solvent was removed by rotary evaporation, and chromatographed Column separation gave a red solid with a yield of 88%. 1 H NMR (400MHz; CDCl 3 ): δ9.44(8H,br), 5.55(8H,br), 4.03(8H,br), 3.13(8H,br), 2.78(12H,br).
5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)镍卟啉的制备:Preparation of 5,10,15,20-tetrakis(4-(3-thioacetylpropoxy)phenyl)nickel porphyrin:
将30mg(0.026mmol)卟啉溶于30ml DMF中,N2保护,加热回流,将64.0mg(0.26mmol)Ni(OAc)2·4H2O加入回流体系,加热回流5h,反应结束。体系冷却至室温,旋蒸除去DMF,加入CH2Cl2将其溶解,用10%的NaHCO3溶液洗涤,再用蒸馏水洗涤2次,无水MgSO4干燥,过滤,旋蒸除去溶剂,层析柱分离,得到红色固体,产率89%。1H NMR(400 MHz;CDCl3):δ8.78(8H,s),7.91(8H,d),7.19(8H,d),4.24(8H,t),3.20(8H,t),2.41(12H,s), 2.22(8H,m).Dissolve 30 mg (0.026 mmol) of porphyrin in 30 ml of DMF, protect with N 2 , heat to reflux, add 64.0 mg (0.26 mmol) Ni(OAc) 2 ·4H 2 O to the reflux system, heat to reflux for 5 h, and the reaction ends. The system was cooled to room temperature, DMF was removed by rotary evaporation, dissolved by adding CH2Cl2 , washed with 10 % NaHCO3 solution, washed twice with distilled water, dried with anhydrous MgSO4 , filtered, solvent was removed by rotary evaporation, and chromatographed Column separation gave a red solid with a yield of 89%. 1 H NMR (400 MHz; CDCl 3 ): δ8.78 (8H, s), 7.91 (8H, d), 7.19 (8H, d), 4.24 (8H, t), 3.20 (8H, t), 2.41 ( 12H, s), 2.22(8H, m).
5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)铜卟啉的制备:Preparation of 5,10,15,20-tetrakis(4-(3-thioacetylpropoxy)phenyl)copper porphyrin:
将30mg(0.026mmol)卟啉溶于30ml氯仿中,N2保护,加热回流,将52mg(0.26mmol)Cu(OAc)2·H2O加入回流体系,加热回流5h,反应结束。体系冷却至室温,旋蒸除去氯仿,加入CH2Cl2将其溶解,用10%的NaHCO3溶液洗涤,再用蒸馏水洗涤2次,无水MgSO4干燥,过滤,旋蒸除去溶剂,层析柱分离,得到红色固体,产率85%。1H NMR(400MHz;CDCl3):δ7.07(8H,br),4.20(8H,br),3.17(8H,br),2.38(12H,br),2.19(8H,br).Dissolve 30 mg (0.026 mmol) of porphyrin in 30 ml of chloroform, protect with N 2 , heat to reflux, add 52 mg (0.26 mmol) Cu(OAc) 2 ·H 2 O to the reflux system, heat to reflux for 5 h, and the reaction ends. The system was cooled to room temperature, chloroform was removed by rotary evaporation, dissolved by adding CH 2 Cl 2 , washed with 10% NaHCO 3 solution, washed twice with distilled water, dried with anhydrous MgSO 4 , filtered, and the solvent was removed by rotary evaporation, and chromatographed Column separation gave a red solid with a yield of 85%. 1 H NMR (400MHz; CDCl 3 ): δ7.07(8H,br), 4.20(8H,br), 3.17(8H,br), 2.38(12H,br), 2.19(8H,br).
5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)锌卟啉的制备:Preparation of 5,10,15,20-tetrakis(4-(3-thioacetylpropoxy)phenyl)zinc porphyrin:
将30mg(0.026mmol)卟啉溶于30ml氯仿中,N2保护,加热回流,将113.9mg(0.52mmol)Zn(OAc)2·2H2O加入回流体系,加热回流5h,反应结束。体系冷却至室温,旋蒸除去氯仿,加入CH2Cl2将其溶解,用10%的NaHCO3溶液洗涤,再用蒸馏水洗涤2次,无水MgSO4干燥,过滤,旋蒸除去溶剂,层析柱分离,得到紫色固体,产率98%。1H NMR (400MHz;CDCl3):δ8.97(8H,s),8.12(8H,d),7.25(8H,d),4.30(8H,t),3.20(8H,t),2.37(12H, s),2.24(8H,m).Dissolve 30 mg (0.026 mmol) of porphyrin in 30 ml of chloroform, protect with N 2 , heat to reflux, add 113.9 mg (0.52 mmol) of Zn(OAc) 2 ·2H 2 O to the reflux system, heat to reflux for 5 h, and the reaction ends. The system was cooled to room temperature, chloroform was removed by rotary evaporation, dissolved by adding CH 2 Cl 2 , washed with 10% NaHCO 3 solution, washed twice with distilled water, dried with anhydrous MgSO 4 , filtered, and the solvent was removed by rotary evaporation, and chromatographed Column separation gave a purple solid with a yield of 98%. 1 H NMR (400MHz; CDCl 3 ): δ8.97(8H, s), 8.12(8H, d), 7.25(8H, d), 4.30(8H, t), 3.20(8H, t), 2.37(12H , s), 2.24(8H, m).
5,10,15,20-四(4-(3-硫代乙酰基丙氧基)苯基)铁卟啉的制备:Preparation of 5,10,15,20-tetrakis(4-(3-thioacetylpropoxy)phenyl)iron porphyrin:
将30mg(0.026mmol)卟啉溶于30ml氯仿中,N2保护,加热回流,将51.69mg(0.26mmol)FeCl2·4H2O加入回流体系,加热回流5h,反应结束。体系冷却至室温,旋蒸除去氯仿,加入CH2Cl2将其溶解,用10%的NaHCO3溶液洗涤,再用蒸馏水洗涤2次,无水 MgSO4干燥,过滤,旋蒸除去溶剂,层析柱分离,得到黑色固体,产率70%。1H NMR(400MHz; CDCl3):δ8.97(8H,s),8.12(8H,d),7.25(8H,d),4.30(8H,t),3.20(8H,t),2.37(12H,s),2.24(8H, m).Dissolve 30 mg (0.026 mmol) of porphyrin in 30 ml of chloroform, protect with N 2 , heat to reflux, add 51.69 mg (0.26 mmol) FeCl 2 ·4H 2 O to the reflux system, heat to reflux for 5 h, and the reaction ends. The system was cooled to room temperature, chloroform was removed by rotary evaporation, dissolved by adding CH 2 Cl 2 , washed with 10% NaHCO 3 solution, washed twice with distilled water, dried with anhydrous MgSO 4 , filtered, and the solvent was removed by rotary evaporation, and chromatographed Column separation gave a black solid with a yield of 70%. 1 H NMR (400MHz; CDCl 3 ): δ8.97(8H, s), 8.12(8H, d), 7.25(8H, d), 4.30(8H, t), 3.20(8H, t), 2.37(12H , s), 2.24(8H, m).
5,10,15,20-四(4-(3-巯基丙氧基)苯基)镍卟啉的制备:Preparation of 5,10,15,20-tetrakis(4-(3-mercaptopropoxy)phenyl)nickel porphyrin:
称取120mg Ni-卟啉置于装有60ml三氯甲烷和18ml的甲醇的烧瓶中,N2保护。称取182mg 20%CH3NaS水溶液于0.5ml的甲醇中,加入到上述溶液中,室温搅拌约1.5h,通过TLC(乙酸乙酯∶CH2Cl2=1∶50)进行监控反应进程,反应完全后蒸发掉溶剂,加水和氯仿进行萃取三次,有机相用稀HCl调节PH=6,再用氯仿提取有机溶液,加无水MgSO4干燥,过滤,旋蒸除去溶剂,层析柱分离(乙酸乙酯∶CH2Cl2=1∶50),得到红色固体,产率30%。1H NMR(400MHz;CDCl3):δ8.78(8H,s),7.91(8H,d),7.19(8H,d),4.24(8H,t),3.20 (8H,t),2.41(12H,s),2.22(8H,m).Weigh 120mg of Ni-porphyrin and place it in a flask filled with 60ml of chloroform and 18ml of methanol under N2 protection. Weigh 182 mg of 20% CH 3 NaS aqueous solution in 0.5 ml of methanol, add it to the above solution, stir at room temperature for about 1.5 h, and monitor the reaction progress by TLC (ethyl acetate: CH 2 Cl 2 =1:50), the reaction Evaporate the solvent after completeness, add water and chloroform to extract three times, the organic phase is regulated PH= 6 with dilute HCl, then extract the organic solution with chloroform, add anhydrous MgSO Dry, filter, rotary evaporation removes solvent, chromatographic column separation (acetic acid Ethyl ester:CH 2 Cl 2 =1:50) to obtain a red solid with a yield of 30%. 1 H NMR (400MHz; CDCl 3 ): δ8.78 (8H, s), 7.91 (8H, d), 7.19 (8H, d), 4.24 (8H, t), 3.20 (8H, t), 2.41 (12H , s), 2.22(8H, m).
(3)自组装膜的制备(3) Preparation of self-assembled membrane
步骤1:将尺寸为1×1cm的硅片依次用丙酮、乙醇、超纯水超声振荡10min并用N2吹干;Step 1: Sonicate a silicon wafer with a size of 1×1cm in sequence with acetone, ethanol, and ultrapure water for 10 minutes and dry it with N 2 ;
步骤2:将清洁的Si/SiO2基底用UV-O3照射30min,以在其表面形成羟基基团;Step 2: irradiating the cleaned Si/ SiO2 substrate with UV- O3 for 30min to form hydroxyl groups on its surface;
步骤3:将活化后的硅片浸在10ml的maleimide organosilane的甲苯(干燥)溶液中(10-3M),N2保护,加热到75℃,自组装36h,以在Si/SiO2衬底上自组装一层maleimideorganosilane 的自组装膜;Step 3: Dip the activated silicon wafer in 10ml of maleimide organosilane in toluene (dry) solution (10 -3 M), N 2 protection, heat to 75°C, self-assemble for 36h, to Si/SiO 2 substrate A self-assembled film of a layer of maleimideorganosilane self-assembled on it;
步骤4:利用maleimide与thiol的反应,将硅片浸在2ml的porphyrin的THF溶液中(5×10-4 M),N2保护,加热到55℃,自组装30h,以将带有四个巯基(-SH)的化合物porphyrin接到Si/SiO2/maleimide organosilane表面上,使得porphyrin大环平面平行于电极表面。Step 4: Utilize the reaction between maleimide and thiol, immerse the silicon wafer in 2ml of porphyrin in THF solution (5×10 -4 M), protect with N 2 , heat to 55°C, and self-assemble for 30h, so that four The thiol (-SH) compound porphyrin is connected to the surface of Si/SiO 2 /maleimide organosilane, so that the plane of the porphyrin macrocycle is parallel to the electrode surface.
(4)材料的表征(4) Characterization of materials
(a)X-射线光电子能谱(XPS)(a) X-ray photoelectron spectroscopy (XPS)
图5为N 1s的XPS示意图,图中结合能为397ev的峰为maleimide organosilane中所含N元素的特征峰峰位置,这表明maleimide organosilane在Si/SiO2表面自组装成功。Figure 5 is the XPS schematic diagram of N 1s. The peak with the binding energy of 397ev in the figure is the characteristic peak position of the N element contained in maleimide organosilane, which indicates that maleimide organosilane self-assembled successfully on the Si/SiO 2 surface.
图6为在Si/SiO2衬底上的porphyrin单分子层S 2p XPS谱。通过比较不同自组装膜中S 2p的化学环境说明巯基与衬底的结合状态,进一步表征不同巯基卟啉的自组装膜。处于未键合状态下的S-H的S 2p元素的结合能应为163-164eV,而处于键和状态下的S-C的S2p 元素的结合能应为162eV。图6中S 2p元素的XPS特征峰的结合能约为162eV,这表明S-C键的形成,即porphyrin成功的接到Si/SiO2/maleimide organosilane表面上。图6中的另一结合能为168eV的特征峰为S 2p的氧化峰,这表明porphyrin中的巯基(-SH)在自组装的过程中有部分被氧化。Figure 6 is the S 2p XPS spectrum of porphyrin monolayer on Si/SiO 2 substrate. The self-assembled films of different mercaptoporphyrins were further characterized by comparing the chemical environment of S 2p in different self-assembled films to illustrate the binding state of thiols to the substrate. The binding energy of the S 2p element of SH in the unbonded state should be 163–164 eV, while that of SC in the bonded state should be 162 eV. The binding energy of the XPS characteristic peak of the S 2p element in Fig. 6 is about 162eV, which indicates the formation of SC bonds, that is, porphyrin is successfully attached to the surface of Si/SiO 2 /maleimide organosilane. Another characteristic peak with a binding energy of 168eV in Figure 6 is the oxidation peak of S 2p, which indicates that the sulfhydryl group (-SH) in porphyrin is partially oxidized during the self-assembly process.
(b)水接触角(b) Water contact angle
通过接触角测定,系统的表征了表面修饰引起的SiO2表面润湿性的变化。图2为SiO2表面的接触角为49.77°,图3为maleimide organosilane自组装膜的表面接触角为67.97°,图4为5,10,15,20-四(4-(3-巯基丙氧基)苯基)镍卟啉自组装膜的表面接触角为88.90°, maleimide organosilane自组装膜顶端基团马来酸酰亚胺含有亲水基团-羰基,而键合的 porphyrin单分子层没有亲水基团,所以水接触角增加,这也证明maleimideorganosilane自组装膜与porphyrin单分子膜成功制备。The change in wettability of SiO2 surface caused by surface modification was systematically characterized by contact angle measurement. Fig. 2 is that the contact angle of SiO 2 surface is 49.77 °, Fig. 3 is that the surface contact angle of maleimide organosilane self-assembled film is 67.97 °, Fig. 4 is 5,10,15,20-tetrakis (4-(3-mercaptopropoxy The surface contact angle of base) phenyl) nickel porphyrin self-assembled film is 88.90°, the maleimide organosilane self-assembled film top group maleimide contains a hydrophilic group-carbonyl group, while the bonded porphyrin monolayer does not The hydrophilic group, so the water contact angle increases, which also proves that the maleimideorganosilane self-assembled film and the porphyrin monomolecular film were successfully prepared.
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