CN104882518A - Electroluminescent device and preparation method thereof, backlight source assembly and display device - Google Patents
Electroluminescent device and preparation method thereof, backlight source assembly and display device Download PDFInfo
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- CN104882518A CN104882518A CN201510209466.7A CN201510209466A CN104882518A CN 104882518 A CN104882518 A CN 104882518A CN 201510209466 A CN201510209466 A CN 201510209466A CN 104882518 A CN104882518 A CN 104882518A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
Abstract
An embodiment of the invention provides an electroluminescent device and a preparation method thereof, a backlight source assembly and a display device, relates to the technical field of display, can reduce substrate cost, reduce structural defects in an epitaxial layer, and realize mass production of large-area luminous sources. The preparation method of the electroluminescent device includes a step of forming a buffer layer on a substrate layer. The step of forming the buffer layer on a basal layer includes: forming the buffer layer on the basal layer, wherein material forming the basal layer is matched with material forming the buffer layer in lattice constant; adopting a pattern transfer printing process to transfer a laminated structure including the buffer layer and the basal layer to the substrate layer, wherein the buffer layer is in direct contact with the substrate layer; and removing the basal layer to expose the buffer layer. The invention also relates to preparation of the electroluminescent device and preparation of a backlight source assembly and a display device which include the electroluminescent device.
Description
Technical field
The present invention relates to Display Technique field, particularly relate to a kind of electroluminescent device and preparation method thereof, backlight assembly, display unit.
Background technology
Electroluminescence (Electroluminescent is called for short EL) device is formed primarily of the epitaxial loayer be formed in successively on substrate, n type semiconductor layer, p type semiconductor layer and the N electrode contacted with n type semiconductor layer, p type semiconductor layer respectively, P electrode.
Current backing material mainly adopts sapphire (Al
2o
3) form, Al
2o
3due to self lattice constant mismatch and thermal stress mismatch, make produce a large amount of fault of construction in the epitaxial loayer grown thereon, affect device luminescent properties, be unfavorable for the preparation in large area light emitting source.
Summary of the invention
Embodiments of the invention provide a kind of electroluminescent device and preparation method thereof, display base plate, backlight assembly, can reduce the fault of construction in epitaxial loayer, realize the mass production in large area light emitting source.
For achieving the above object, embodiments of the invention adopt following technical scheme:
On the one hand, embodiments provide a kind of preparation method of electroluminescent device, described preparation method comprises: the step forming resilient coating on substrate layer; The described step forming resilient coating on substrate layer comprises: form resilient coating on the base layer; Wherein, the material forming described basalis matches with the material lattice constant forming described resilient coating; Adopt process of pattern transfer, the stepped construction including described resilient coating and described basalis is transferred on described substrate layer; Wherein, described resilient coating directly contacts with described substrate layer; Remove described basalis, expose described resilient coating.
Optionally, described process of pattern transfer comprises: any one in hot transfer printing, laser transfer, pressure transfer printing and colloid transfer printing.
Optionally, described resilient coating is made up of Graphene.
Preferred further, described basalis is made up of at least one material in Cu, Ni, Co, Ru, Au and Ag.
Preferred further, described preparation method also comprises: on the described resilient coating formed, form the first semiconductor layer, the second semiconductor layer successively; Wherein, described first semiconductor layer and described second semiconductor layer N type semiconductor and P type semiconductor each other.
Preferred further, described preparation method also comprises: on described second semiconductor layer formed, form the electrode layer be made up of transparent conductive material; Wherein, described electrode layer and the described resilient coating negative electrode and positive electrode be each other made up of Graphene.
Preferred on the basis of the above, described substrate layer is at least made up of silicon dioxide.
On the other hand, the embodiment of the present invention additionally provides a kind of electroluminescent device, the preparation method's acquisition described in described any one of electroluminescent device employing the claims 1 to 7.
Optionally, described resilient coating is made up of Graphene.
Preferred further, described electroluminescent device also comprises: be positioned at the first semiconductor layer on described resilient coating; Be positioned at the second semiconductor layer on described first semiconductor layer; Wherein, described first semiconductor layer and described second semiconductor layer N type semiconductor and P type semiconductor each other.
Preferred further, described electroluminescent device also comprises: be positioned at the electrode layer be made up of transparent conductive material on described second semiconductor layer; Wherein, described electrode layer and the described resilient coating negative electrode and positive electrode be each other made up of Graphene.
Preferred further, described resilient coating is negative electrode; Described electrode layer is anode; Described first semiconductor layer is N type semiconductor; Described second semiconductor layer is P type semiconductor.
Preferred on the basis of the above, described substrate layer is at least made up of silicon dioxide.
Preferably, described electroluminescent device also comprises: the shell be made up of transparent material; Bond the sealed plastic box of surrounding of described shell and described substrate layer; Wherein, be formed at the described resilient coating on described substrate layer, described first semiconductor layer, described second semiconductor layer and described electrode layer and be all positioned at described enclosure.
One side, the embodiment of the present invention additionally provide a kind of backlight assembly again, comprise above-mentioned electroluminescent device.
Another aspect, the embodiment of the present invention additionally provide a kind of display unit, comprise above-mentioned backlight assembly.
Based on this, the above-mentioned preparation method that the embodiment of the present invention provides, by adopting the mode of pattern transfer printing, the resilient coating 11 grown is transferred on substrate layer 10, therefore can not produce poor due to resilient coating 11 and substrate layer 10 lattice constant match and occur fault of construction in the resilient coating 11 that causes, ensure that the good luminous performance of device, thus the mass production preparation in large area light emitting source can be realized.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 a to Fig. 1 c is followed successively by the substep schematic diagram of the preparation process S01 to S03 of a kind of electroluminescent device that the embodiment of the present invention provides;
The structural representation of a kind of electroluminescent device that Fig. 2 provides for prior art;
The schematic diagram of the preparation process S04 of a kind of electroluminescent device that Fig. 3 provides for the embodiment of the present invention;
Fig. 4 is the principle of luminosity schematic diagram of electroluminescent device;
The schematic diagram of the preparation process S05 of a kind of electroluminescent device that Fig. 5 provides for the embodiment of the present invention;
The structural representation of a kind of electroluminescent device that Fig. 6 provides for the embodiment of the present invention.
Reference numeral:
01-electroluminescent device; 10-substrate layer; 11-resilient coating; 12-first semiconductor layer; 13-second semiconductor layer; 14-electrode layer; 15-shell; 16-sealed plastic box; 02-stepped construction; 20-basalis.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
It is pointed out that unless otherwise defined, all terms (comprising technology and scientific terminology) used in the embodiment of the present invention have the identical meanings jointly understood with those skilled in the art.It should also be understood that, those terms such as defined in usual dictionary should be interpreted as having the consistent implication of implication with them in the context of correlation technique, and do not apply idealized or extremely formal meaning explain, unless defined so clearly here.
And, in describing the invention, term " on ", D score, the orientation of the instruction such as " surrounding " or position relationship be based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as limitation of the present invention.
Embodiments provide a kind of preparation method of electroluminescent device 01, this preparation method comprises: the step forming resilient coating 11 on substrate layer 10; Specifically comprise the following steps:
S01, as shown in Figure 1a, basalis 20 forms resilient coating 11; Wherein, the material forming basalis 20 matches with the material lattice constant forming resilient coating 11;
S02, as shown in Figure 1 b, adopts process of pattern transfer, is transferred on substrate layer 10 by including the stepped construction 02 of resilient coating 11 with basalis 20; Wherein, resilient coating 11 directly contacts with substrate layer 10;
S03, as illustrated in figure 1 c, removes basalis 20 (illustrating with dotted line in figure), exposes resilient coating 11.
It should be noted that, first, lattice constant (Lattice Constant) is the elementary structure parameter of crystalline solid, it and interatomic combination can have direct relation; The change of lattice constant reflects the change of the composition, stress etc. of crystals.A certain material is easy to grow film forming on the another kind of material matched with its lattice constant, and there will not be and do not mate due to bi-material lattice constant and occur fault of construction in the filmogen (resilient coating 11 described above) produced.
Therefore, in above-mentioned steps S01, be easy to direct growth and lessly in structure occur defect to make resilient coating 11 on basalis 20, the material forming basalis 20 should match with the material lattice constant forming resilient coating 11.Example, when resilient coating 11 be made up of Graphene (Graphene) time, basalis 20 is preferably made up of at least one material in Cu, Ni, Co, Ru, Au and Ag.
Second, in above-mentioned steps S02, above-mentioned process of pattern transfer, refers to the technique transferred to by the rete (resilient coating 11 described above) with certain pattern be formed on intermediate carrier in destination carrier (substrate layer 10 described above).The resilient coating 11 being about to grow is transferred on substrate layer 10, thus can not produce poor due to resilient coating 11 and substrate layer 10 lattice constant match and occur fault of construction in the resilient coating 11 that causes.
Here, process of pattern transfer specifically can include but not limited to any one in hot transfer printing, laser transfer, pressure transfer printing and colloid transfer printing.
Example, above-mentioned process of pattern transfer specifically can adopt following sub-step to complete:
S21, on basalis 20, form resilient coating 11; Wherein, can the multiple film-forming process such as selective evaporation method, CVD (Chemical Vapor Deposition, chemical vapour deposition technique) according to the concrete material difference of resilient coating 11;
S22, adopt coating technique, by basalis 20 with resilient coating 11 through heating, together with pressurized treatments postadhesion; Wherein, coating technique refers to by equipment such as laminating machines at the certain thickness release glue-line of the surface coverage of resilient coating 11, to realize follow-up design transfer;
S23, be transferred on substrate layer 10 by release glue-line by including resilient coating 11 stepped construction 02 with basalis 20, release glue-line directly contacts with substrate layer 10;
S24, according to release glue-line chemical property, remove release glue-line, to make resilient coating 11 directly contact with substrate layer 10, to complete follow-up device preparation technology.
Here, according to the different chemical character that release glue-line has, the mode correspondingly removing release glue-line is also different.Such as, when release glue-line is made up of Thermal release glue, by the mode of heating, Thermal release glue discharged and remove; When release glue-line is made up of photosensitive release glue, then the mode of being irradiated by UV (ultraviolet, ultraviolet light) makes photosensitive release glue discharge and remove; When release glue-line is formed by reacting release glue, then make reaction discharge glue release by corresponding chemical reaction and remove; When release glue-line is made up of pressure-sensitive release glue, then remove by executing stressed mode to make pressure-sensitive release glue discharge.
Three, in above-mentioned steps S03, remove basalis 20 and can adopt the multiple rete removing method such as dry etching, wet etching, be specifically not construed as limiting.
Based on this, the above-mentioned preparation method that the embodiment of the present invention provides, by adopting the mode of pattern transfer printing, the resilient coating 11 grown is transferred on substrate layer 10, therefore can not produce poor due to resilient coating 11 and substrate layer 10 lattice constant match and occur fault of construction in the resilient coating 11 that causes, ensure that the good luminous performance of device, thus the mass production preparation in large area light emitting source can be realized.
Preferred on the basis of the above, resilient coating 11 is made up of Graphene.Here, grapheme material refers to a kind of Two-dimensional Carbon material be made up of with the closelypacked carbon atom of benzene ring structure (i.e. hexagonal honeycomb structure) periodicity one or more layers.Due to the special construction that it has, therefore Graphene has the performance of a series of excellence, as total light transmittance>=97.7% of Graphene, far above the total light transmittance of 86% of ITO (Indium Tin Oxide, tin indium oxide) material; Electron mobility under normal temperature is more than 1.5 × 10
4, higher than CNT (carbon nano-tube) or low-temperature polysilicon silicon materials; Resistivity is about 1.0 × 10
-6Ω cm, far below copper or ag material.
Here, compared to the structure that resilient coating in prior art 11 adopts nitride semi-conductor material to form, as shown in Figure 2, owing to resilient coating 11 needing growth n type semiconductor layer or p type semiconductor layer, directly can not form electrode structure, therefore the device of vertical stratification cannot be made, usually N-type electrode and P-type electrode can only be made on the surface of n type semiconductor layer, p type semiconductor layer respectively, because n type semiconductor layer and p type semiconductor layer are light-emitting area, therefore above-mentioned structure causes the reduction of effective light-emitting area, and light loss is serious.
And the embodiment of the present invention is formed resilient coating 11 with Graphene, it not only can play the effect of the resilient coating in electroluminescent device of the prior art, and the high permeability had due to resilient coating 11 and low-resistivity, also can be used as the male or female structure in electroluminescent device 01.When the resilient coating 11 be made up of Graphene is as male or female in above-mentioned electroluminescent device 01, whole luminescence can be realized, thus avoid making n-type electrode and p-type electrode in light-emitting area in generation prior art, cause effective light-emitting area and reduce, the problem that light loss is serious.
Further, because the conductive coefficient of Graphene is up to 5300W/mK, higher than carbon nano-tube and diamond, the heat radiation of electroluminescent device 01 is more conducive to.Therefore the heat radiation difficult problem when electroluminescent device 01 area is larger can also be solved further.
On this basis, above-mentioned preparation method also comprises:
S04, as shown in Figure 3, the resilient coating 11 formed forms the first semiconductor layer 12, second semiconductor layer 13 successively; Wherein, the first semiconductor layer 12 and the second semiconductor layer 13 N type semiconductor and P type semiconductor each other.
It should be noted that, the first semiconductor layer 12 and the second semiconductor layer 13 N type semiconductor and P type semiconductor each other, refer to that the second semiconductor layer 13 is P type semiconductor when the first semiconductor layer 12 is for N type semiconductor; Otherwise when the first semiconductor layer 12 is P type semiconductor, the second semiconductor layer 13 is N type semiconductor.
Such as, the first semiconductor layer 12 can be N-type GaN (gallium nitride), the second semiconductor layer 13 is P type GaN, is specifically as follows P type GaN N-type GaN being carried out to the formation of Mg (magnesium) ion doping; Or the first semiconductor layer 12 can be N-type GaAs (GaAs), the second semiconductor layer 13 is P type GaAs, is specifically as follows P type GaAs N-type GaAs being carried out to the formation of Be (beryllium) ion doping; Again or, the first semiconductor layer 12 can be N-type GaP (gallium phosphide), the second semiconductor layer 13 is P type GaP, is specifically as follows and carries out to N-type GaP the P type GaP that Zn (zinc) and/or Mg ion doping formed.
Namely, first semiconductor layer 12 and the second semiconductor layer 13 constitute the PN junction in electroluminescent device 01, its principle of luminosity as shown in Figure 4, namely P type semiconductor as the P district of PN junction, N type semiconductor as the N district of PN junction, under the effect of extra electric field, hole, electronics is inspired respectively in P district, N district, and at P district and N district intersection recombination luminescence.
Here, below due to the first semiconductor layer 12 is the resilient coating 11 be made up of Graphene, the lattice constant match of the luminescent material such as Graphene and GaN is better, can play and make the epitaxially grown effect thereon of the first semiconductor layer 12, be conducive to occurring fault of construction in reduction first semiconductor layer 12.Therefore, preferably, MOCVD (Metal-Organic ChemicalVapor Deposition, metallorganic chemical vapor deposition) technique is adopted to form the first semiconductor layer 12; Wherein, MOCVD is a kind of Novel air phase epitaxy growing technology grown up on the basis of vapor phase epitaxial growth (vapour phase epitaxy is called for short VPE).
Same, the below due to the second semiconductor layer 13 is the first semiconductor layer 12, can play and make the epitaxially grown effect thereon of the second semiconductor layer 13, therefore, preferably, adopts MOCVD technique to form the second semiconductor layer 13.
On this basis, above-mentioned preparation method also comprises:
S05, as shown in Figure 5, the second semiconductor layer 13 formed forms the electrode layer 14 be made up of transparent conductive material; Wherein, electrode layer 14 and resilient coating 11 negative electrode and positive electrode be each other made up of Graphene.
Here, electrode layer 14 can adopt ITO (Indium Tin Oxide, tin indium oxide), IZO (Indium Zinc Oxide, indium zinc oxide), FTO (Fluorine-Doped TinOxide, Fluorin doped tin ash) etc. transparent conductive material form, and goose examines the preparation such as the kinds of processes that adopts vapour deposition method, to realize double-side, improves the application of above-mentioned electroluminescent device 01.
Wherein, electrode layer 14 and the resilient coating 11 be made up of Graphene each other negative electrode and positive electrode refer to, when electrode layer 14 is negative electrode, resilient coating 11 is anode; Otherwise when electrode layer 14 is anode, resilient coating 11 is negative electrode.
Preferred on the basis of the above, substrate layer 10 is at least by silicon dioxide (SiO
2) form.Here, due to SiO
2material is extensively present in natural various ore materials, is easy to obtain and cheap, substitutes the traditional Al be applied in electroluminescent device
2o
3(sapphire), SiC (carborundum) significantly can reduce the cost of electroluminescent device 01, thus realize the volume production in large area light emitting source.
Wherein, as the glass of one of the common substrate material showing product, its chemical composition is Na
2oCaO6SiO
2, namely main component is SiO
2, relative to pure SiO
2do not need the purifying technique through complexity, be easier to obtain; Further, the source material cost of glass is only equivalent to Al
2o
3backing material cost 1/10th even lower.In addition, glass has been widely used in as backing material in the various display products in Display Technique field, and production technology is more ripe, is suitable for volume production.Therefore, the embodiment of the present invention is preferred further, and substrate layer 10 adopts glass material to form.
Based on this, the above-mentioned preparation method provided by the embodiment of the present invention, owing to selecting cheap, to be easy to acquisition SiO
2as the material of substrate layer 10, instead of the Al of expensive, complicated process of preparation in the past
2o
3, SiC substrate material, because this reducing the preparation cost of electroluminescent device 01; On this basis, because substrate layer 10 adopts SiO
2material is formed, and therefore adopts the mode of pattern transfer printing to be transferred on substrate layer 10 by the resilient coating 11 grown, can not produce due to resilient coating 11 and SiO
2there is fault of construction in the resilient coating 11 that Lattice Matching is poor and cause, ensure that the good luminous performance of device, thus the mass production preparation in large area light emitting source can be realized.
Further, embodiments provide a kind of electroluminescent device 01 adopting above-mentioned preparation method to obtain, shown in figure 1c, this electroluminescent device 01 comprises: be positioned at the resilient coating 11 on substrate layer 10.
Here, due to SiO
2material is extensively present in natural various ore materials, is easy to obtain and cheap, substitutes traditional Al
2o
3, SiC significantly can reduce the cost of electroluminescent device 01, thus realize the volume production in large area light emitting source.
Preferred on the basis of the above, resilient coating 11 is made up of Graphene.Compared to the structure that resilient coating in prior art 11 adopts nitride semi-conductor material to form, the embodiment of the present invention is formed resilient coating 11 with Graphene, it not only can play the effect of resilient coating of the prior art, and the high permeability had due to resilient coating 11 and low-resistivity, also can be used as the male or female structure in electroluminescent device 01.When the resilient coating 11 be made up of Graphene is as male or female in above-mentioned electroluminescent device 01, whole luminescence can be realized, thus avoid making n-type electrode and p-type electrode in light-emitting area in generation prior art, cause effective light-emitting area and reduce, the problem that light loss is serious.
Further, because the conductive coefficient of Graphene is up to 5300W/mK, higher than carbon nano-tube and diamond, the heat radiation of electroluminescent device 01 is more conducive to.Therefore the heat radiation difficult problem when electroluminescent device 01 area is larger can also be solved further.
Further, shown in figure 3, this electroluminescent device 01 also comprises: be positioned at the first semiconductor layer 12 on resilient coating 11; Be positioned at the second semiconductor layer 13 on the first semiconductor layer 12; Wherein, the first semiconductor layer 12 and the second semiconductor layer 13 N type semiconductor and P type semiconductor each other.
Such as, the first semiconductor layer 12 can be N-type GaN, the second semiconductor layer 13 is P type GaN, is specially P type GaN N-type GaN being carried out to the formation of Mg ion doping.
Further, shown in figure 5, this electroluminescent device 01 also comprises: be positioned at the electrode layer 14 be made up of transparent conductive material on the second semiconductor layer 13; Wherein, electrode layer 14 and resilient coating 11 negative electrode and positive electrode be each other made up of Graphene.
Here, electrode layer 14 can adopt ITO (Indium Tin Oxide, tin indium oxide), IZO (Indium Zinc Oxide, indium zinc oxide), FTO (Fluorine-Doped TinOxide, Fluorin doped tin ash) etc. transparent conductive material form, and goose examines the preparation such as the kinds of processes that adopts vapour deposition method, to realize double-side, improves the application of above-mentioned electroluminescent device 01.
On this basis, because resilient coating 11 adopts Graphene to form, its work function is lower, as being conducive to exciting of electronics during negative electrode; And electrode layer 14 work function be made up of transparent conductive materials such as ITO, IZO, FTO is higher, as being conducive to exciting of hole during anode, therefore preferably, resilient coating 11 is negative electrode; Electrode layer 14 is anode; Accordingly, the first semiconductor layer 12 directly contacted with resilient coating 11 is N type semiconductor (polyelectron), and the second semiconductor layer 13 directly contacted with electrode layer 14 is P type semiconductor (multi-hole).
Further, as shown in Figure 6, this electroluminescent device 01 also comprises: the shell 15 be made up of transparent material; The sealed plastic box 16 of the surrounding of bonding shell 15 and substrate layer 10; Wherein, being formed at resilient coating 11, first semiconductor layer 12, second semiconductor layer 13 on substrate layer 10 and electrode layer 14, to be all positioned at shell 15 inner.
Here, shell 15 can be made up of the transparent material such as glass, resin, while providing packaging protection to above-mentioned each structure, realizes double-side.
The embodiment of the present invention additionally provides a kind of backlight assembly, comprises above-mentioned electroluminescent device 01.
The embodiment of the present invention additionally provides a kind of display unit, comprises above-mentioned backlight assembly.Here, display unit such as can have any display product with backlight assembly or parts for liquid crystal display, LCD TV, DPF, mobile phone, panel computer etc.
It should be noted that, institute of the present invention drawings attached is the simple schematic diagram of above-mentioned electroluminescent device and preparation method thereof, only for the clear this programme that describes embodies the structure relevant to inventive point, the structure irrelevant with inventive point for other is existing structure, in the accompanying drawings not embodiment or only realizational portion.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (16)
1. a preparation method for electroluminescent device, is characterized in that, described preparation method comprises: the step forming resilient coating on substrate layer; The described step forming resilient coating on substrate layer comprises:
Form resilient coating on the base layer; Wherein, the material forming described basalis matches with the material lattice constant forming described resilient coating;
Adopt process of pattern transfer, the stepped construction including described resilient coating and described basalis is transferred on described substrate layer; Wherein, described resilient coating directly contacts with described substrate layer;
Remove described basalis, expose described resilient coating.
2. preparation method according to claim 1, is characterized in that, described process of pattern transfer comprises: any one in hot transfer printing, laser transfer, pressure transfer printing and colloid transfer printing.
3. preparation method according to claim 1, is characterized in that, described resilient coating is made up of Graphene.
4. preparation method according to claim 3, is characterized in that, described basalis is made up of at least one material in Cu, Ni, Co, Ru, Au and Ag.
5. preparation method according to claim 3, is characterized in that, described preparation method also comprises:
The described resilient coating formed forms the first semiconductor layer, the second semiconductor layer successively;
Wherein, described first semiconductor layer and described second semiconductor layer N type semiconductor and P type semiconductor each other.
6. preparation method according to claim 3, is characterized in that, described preparation method also comprises:
Described second semiconductor layer formed forms the electrode layer be made up of transparent conductive material;
Wherein, described electrode layer and the described resilient coating negative electrode and positive electrode be each other made up of Graphene.
7. the preparation method according to any one of claim 1 to 6, is characterized in that, described substrate layer is at least made up of silicon dioxide.
8. an electroluminescent device, is characterized in that, described electroluminescent device adopts the preparation method described in any one of the claims 1 to 7 to obtain.
9. electroluminescent device according to claim 8, is characterized in that, described resilient coating is made up of Graphene.
10. electroluminescent device according to claim 9, is characterized in that, described electroluminescent device also comprises:
Be positioned at the first semiconductor layer on described resilient coating;
Be positioned at the second semiconductor layer on described first semiconductor layer;
Wherein, described first semiconductor layer and described second semiconductor layer N type semiconductor and P type semiconductor each other.
11. electroluminescent devices according to claim 10, is characterized in that, described electroluminescent device also comprises:
Be positioned at the electrode layer be made up of transparent conductive material on described second semiconductor layer;
Wherein, described electrode layer and the described resilient coating negative electrode and positive electrode be each other made up of Graphene.
12. electroluminescent devices according to claim 11, is characterized in that,
Described resilient coating is negative electrode;
Described electrode layer is anode;
Described first semiconductor layer is N type semiconductor;
Described second semiconductor layer is P type semiconductor.
Electroluminescent device described in 13. any one of according to Claim 8 to 12, it is characterized in that, described substrate layer is at least made up of silicon dioxide.
14. electroluminescent devices according to claim 11 or 12, it is characterized in that, described electroluminescent device also comprises:
The shell be made up of transparent material;
Bond the sealed plastic box of surrounding of described shell and described substrate layer;
Wherein, be formed at the described resilient coating on described substrate layer, described first semiconductor layer, described second semiconductor layer and described electrode layer and be all positioned at described enclosure.
15. 1 kinds of backlight assemblies, is characterized in that, described backlight assembly comprises the electroluminescent device as described in any one of claim 8 to 14.
16. 1 kinds of display unit, is characterized in that, described display unit comprises backlight assembly as claimed in claim 15.
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