CN104868906A - Integrated circuit and voltage selection circuit - Google Patents
Integrated circuit and voltage selection circuit Download PDFInfo
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- CN104868906A CN104868906A CN201510292905.5A CN201510292905A CN104868906A CN 104868906 A CN104868906 A CN 104868906A CN 201510292905 A CN201510292905 A CN 201510292905A CN 104868906 A CN104868906 A CN 104868906A
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Abstract
The invention relates to a circuit for preventing a bulk from leaking current during booting of an integrated circuit (IC) with a plurality of voltage domains. The integrated circuit comprises a first voltage domain capable of being operated to establish a first domain voltage, a second voltage domain capable of being operated to establish a second domain voltage, and a voltage selection circuit capable of being operated to output a larger voltage of the first domain voltage which is under establishment or already established and the second domain voltage which is under establishment or already established to use as a bulk voltage of the second voltage domain, so that leakage current does not occur even if the first voltage domain is booted ahead of the second voltage domain.
Description
Technical field
The execution mode of the application relates to integrated circuit fields, more specifically, relates to a kind of for preventing the circuit of this body leakage current between the starting period at the integrated circuit (IC) with multiple voltage domain.
Background technology
Along with the high speed development of integrated circuit, power management IC use is in the electronic device more and more extensive, plays a part transformation of electrical energy, distribution, detection and other electric energy managements.Consider that electric energy needs the span of conversion usually very large, generally speaking, multiple different voltage domain (voltagedomain) is there is in power supply IC, under each voltage domain is operated in different supply voltages (at this also referred to as territory voltage), the differentiated control according to the foundation of time order and function order and for realizing electric energy.
Such as, charger for mobile phone is a kind of common power management IC.A kind of conventional charger for mobile phone is connected between the civil power of 220V and mobile phone, for becoming to be suitable for the 5V direct current of mobile phone charging by the convert alternating current of 220V.This charger for mobile phone generally includes two voltage domains, by the first voltage domain first set up, the convert alternating current of 220V is become the direct current of 24V, by the second voltage domain of rear foundation, the DC power conversion of 24V is become the direct current of 5V again, the direct current of this 5V exports to mobile phone for charging.
In the start-up course of each voltage domain, if the signal generated in the voltage domain comparatively early started (such as before the voltage domain started comparatively late starts not yet completely) flow in the voltage domain started comparatively late (source electrode or drain electrode), then often there is leakage current (leakage current) between the source electrode (or drain electrode) flowed at this signal and body (bulk).This will cause serious problem in IC.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, this specification proposes following scheme.
According to the first aspect of the application, a kind of integrated circuit is provided, comprises: the first voltage domain, can operate to set up the first territory voltage; Second voltage domain, can operate to set up the second territory voltage; And voltage selecting circuit, can operate using by setting up or the described first territory voltage set up and in setting up or the greater in the described second territory voltage set up export bulk voltage as described second voltage domain.
In one embodiment, described first voltage domain starts prior to described second voltage domain.
In one embodiment, described second voltage domain comprises one or more transistor, and described second voltage domain is coupled to described first voltage domain by described transistor.In a preferred embodiment, wherein said second voltage domain by the source electrode of in described transistor or drain coupled to described first voltage domain.
In one embodiment, described voltage selecting circuit comprises: the first transistor and transistor seconds, the source-coupled of wherein said the first transistor is to the first input end of described voltage selecting circuit, the grid of described the first transistor is coupled to the source electrode of described transistor seconds, the source-coupled of wherein said transistor seconds is to the second input of described voltage selecting circuit, and the grid of described transistor seconds is coupled to the source electrode of described the first transistor; And the drain electrode of the drain electrode of wherein said the first transistor and body and described transistor seconds and body are coupled to the output of described voltage selecting circuit.
In one embodiment, one or more in described one or more transistor, described the first transistor and described transistor seconds are PMOS transistor.
According to the second aspect of the application, a kind of voltage selecting circuit is provided, comprises: the first transistor and transistor seconds; The source-coupled of wherein said the first transistor is to the first input end of described voltage selecting circuit, and the grid of described the first transistor is coupled to the source electrode of described transistor seconds; The source-coupled of wherein said transistor seconds is to the second input of described voltage selecting circuit, and the grid of described transistor seconds is coupled to the source electrode of described the first transistor; And the drain electrode of the drain electrode of wherein said the first transistor and body and described transistor seconds and body are coupled to the output of described voltage selecting circuit.
In one embodiment, described the first transistor and/or described transistor seconds are PMOS transistor.
Accompanying drawing explanation
Fig. 1 shows the schematic diagram of existing power management IC 100.
Fig. 2 show according to the application's illustrative embodiments, for preventing integrated circuit 200 schematic diagram of leakage current.
Fig. 3 show according to the application's illustrative embodiments, for preventing the schematic diagram of the voltage selecting circuit 300 of leakage current.
Embodiment
Principle and the spirit of the application are described below with reference to some illustrative embodiments.Should be appreciated that providing these execution modes is only used to enable those skilled in the art understand better and then realize the application, and not limit the scope of the application by any way.
Fig. 1 shows the schematic diagram of existing power management IC 100.Fig. 1 schematically illustrates two voltage domain D1 and D2.As shown in Figure 1, D2 as interface, is coupled to D1 by transistor (be PMOS transistor shown in Fig. 1, but not as the restriction to the application).Particularly, the signal from D1 is input to the source electrode (be source electrode shown in Fig. 1, but may be connected to drain electrode completely) as the transistor of interface in D2, and the drain electrode of this transistor exports the voltage for other devices in the second voltage domain again.
In this Fig. 1, the N-type body (bulk) of the PMOS transistor of D2 connects an internal electric source, and the output voltage of this internal electric source is vdd_lpd.When the N-type body of PMOS transistor connects high potential, when P type source electrode connects electronegative potential, bolt-lock can not be there is.But because D1 starts prior to D2, so likely when the internal electric source of D2 is not yet set up ready, the output signal of D1 just reaches the source electrode of the PMOS transistor of D2.At this moment, because the internal electric source of D2 does not also establish, so the N-type body of PMOS transistor connects electronegative potential, P type source electrode connects high potential, so there will be leakage current between source electrode and body, indicated by Fig. 1 mean camber line arrow.This leakage current can cause power management IC to occur gross error, thus has a strong impact on the reliability of integrated circuit.
In order to solve above-mentioned leakage problem, be described referring to Fig. 2.Fig. 2 show according to the application's illustrative embodiments, for preventing integrated circuit 200 schematic diagram of leakage current.
As shown in Figure 2, integrated circuit 200 comprises voltage domain D1, voltage domain D2 and voltage selecting circuit.D1 can operate to set up supply voltage V1 (at this also referred to as the first territory voltage), and D2 can operate to set up supply voltage V2 (at this also referred to as the second territory voltage).Voltage domain D1 and D2 can intercouple.In the example illustrated in Fig. 2, coupled modes be D2 pass through comprising multiple transistors in a transistors couple to D1.And more preferably, be coupled to D1 by the source electrode (be source electrode shown in Fig. 2, but also can be drain electrode) of one of them PMOS transistor T.It will be understood by those skilled in the art that this coupled modes are only preferred, do not get rid of other coupled modes of this area.
Two input terminal a and b of voltage selecting circuit are coupled to V1 and V2 that be in foundation or that set up respectively, and its lead-out terminal is coupled to the body of D2, voltage larger in the voltage will received from input terminal a and b exports the bulk voltage as D2.
In integrated circuit 200 illustrated in fig. 2, one larger in supply voltage V2 due to bulk voltage always supply voltage V1 and D2 of D1 of D2, even if therefore when D1 starts prior to D2, the inevitable bulk potential lower than transistor T of current potential of the source electrode (or drain electrode) of the transistor T be coupled with D1, thus prevents the generation of leakage current.
Be illustrated above the integrated circuit for preventing leakage phenomenon according to the application.In addition, present invention also provides a kind of implementation realized the voltage selecting circuit that input voltage is selected.Specifically be described with reference to Fig. 3.
Fig. 3 show according to the application's illustrative embodiments, for preventing the schematic diagram of the voltage selecting circuit 300 of leakage current.As shown in Figure 3, this voltage selecting circuit 300 comprises transistor T1 and transistor T2, wherein the source electrode of transistor T1 (such as a) is coupled to the first voltage via terminal, the source electrode (such as via terminal b) of transistor T2 is coupled to the second voltage, the grid (such as via terminal b) of T1 is coupled to the second voltage, and the grid of T2 (such as a) is coupled to the first voltage via terminal.The drain electrode of T1 and T2 and body are coupled and provide voltage to export, such as, vb_max in Fig. 3.
If when wishing that the output of this voltage selecting circuit 300 is the greater in the first voltage and the second voltage, transistor T1 and T2 can be chosen for PMOS.Like this, such as, when the first voltage is higher than the second voltage, transistor T1 conducting, what vb_max exported is the first voltage received from terminal a.
Voltage selecting circuit 300 as shown in Figure 3 can be applied in circuit 200 as shown in Figure 2.Only terminal a and b of voltage selecting circuit 300 need be connect the first territory voltage and the second territory voltage respectively.But, it will be understood by those skilled in the art that, voltage selecting circuit in Fig. 2 is except can adopting the implementation of circuit 300, and of the prior art other can be adopted completely anyly to be realized the circuit that voltage is selected, and the application is unrestricted in this regard.
In addition, the application also provides a kind of integrated circuit starting method, comprising: for the first voltage domain in described integrated circuit and the second voltage domain set up the first territory voltage and the second territory voltage respectively or simultaneously; And by setting up or the described first territory voltage set up and in setting up or the greater in the described second territory voltage set up be provided as the bulk voltage of described second voltage domain.
In the one of the application realizes, between the starting period of integrated circuit, wherein said first territory voltage is set up prior to described second territory voltage.
In the one of the application realizes, also comprise and provide signal from described first voltage domain to described second voltage domain by one or more transistor.In the preferred implementation, the source electrode of in described transistor or drain coupled are to described first voltage domain.
In the one of the application realizes, wherein by setting up or the described first territory voltage set up and in setting up or bulk voltage that the greater in the described second territory voltage set up is provided as described second voltage domain realized by voltage selecting circuit, described voltage selecting circuit comprises: the first transistor and transistor seconds, the source-coupled of described the first transistor is to the first input end of described voltage selecting circuit, the grid of described the first transistor is coupled to the source electrode of described transistor seconds, the source-coupled of described transistor seconds is to the second input of described voltage selecting circuit, the grid of described transistor seconds is coupled to the source electrode of described the first transistor, and the drain electrode of the drain electrode of described the first transistor and body and described transistor seconds and body are coupled to the output of described voltage selecting circuit.
In the one of the application realizes, one or more in described one or more transistor, described the first transistor and described transistor seconds are PMOS transistor.
Spirit and the principle of the application is illustrated above in conjunction with some embodiments.According to the execution mode of the application, user can be made simply easily to find important information (key message) when obtaining a certain picture, and associated further details can be obtained by means of only simple this key message of clicking, simplify the operation of user and accelerate the speed of operation.
It should be noted that the execution mode of the application can be realized by the combination of hardware, software or software and hardware.Hardware components can utilize special logic to realize; Software section can store in memory, and by suitable instruction execution system, such as microprocessor or special designs hardware perform.Those having ordinary skill in the art will appreciate that above-mentioned equipment and method can use computer executable instructions and/or be included in processor control routine to realize, such as, on the programmable memory of mounting medium, such as read-only memory (firmware) or the data medium of such as optics or electrical signal carrier of such as disk, CD or DVD-ROM, provide such code.The equipment of the application and module thereof can be realized by the hardware circuit of the programmable hardware device of the semiconductor of such as very lagre scale integrated circuit (VLSIC) or gate array, such as logic chip, transistor etc. or such as field programmable gate array, programmable logic device etc., also with the software simulating performed by various types of processor, also can be realized by the combination such as firmware of above-mentioned hardware circuit and software.
Claims (5)
1. an integrated circuit, comprising:
First voltage domain, can operate to set up the first territory voltage;
Second voltage domain, can operate to set up the second territory voltage; And voltage selecting circuit, can operate using by setting up or the described first territory voltage set up and in setting up or the greater in the described second territory voltage set up export bulk voltage as described second voltage domain.
2. circuit according to claim 1, wherein said first voltage domain starts prior to described second voltage domain.
3. circuit according to claim 1, wherein, described second voltage domain comprises one or more transistor, and described second voltage domain is coupled to described first voltage domain by described transistor.
4. circuit according to claim 3, wherein said second voltage domain by the source electrode of in described transistor or drain coupled to described first voltage domain.
5. circuit according to claim 1, wherein, described voltage selecting circuit comprises the first transistor and transistor seconds, the source-coupled of wherein said the first transistor is to the first input end of described voltage selecting circuit, the grid of described the first transistor is coupled to the source electrode of described transistor seconds, the source-coupled of wherein said transistor seconds is to the second input of described voltage selecting circuit, and the grid of described transistor seconds is coupled to the source electrode of described the first transistor; And the drain electrode of the drain electrode of wherein said the first transistor and body and described transistor seconds and body are coupled to the output of described voltage selecting circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510292905.5A CN104868906A (en) | 2015-05-26 | 2015-05-26 | Integrated circuit and voltage selection circuit |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510292905.5A CN104868906A (en) | 2015-05-26 | 2015-05-26 | Integrated circuit and voltage selection circuit |
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| CN104868906A true CN104868906A (en) | 2015-08-26 |
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| CN201510292905.5A Pending CN104868906A (en) | 2015-05-26 | 2015-05-26 | Integrated circuit and voltage selection circuit |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1033427A (en) * | 1987-12-03 | 1989-06-14 | 内蒙古自治区赤峰红山机电研究所 | Protector circuit against electric leakage |
| CN102246236A (en) * | 2008-12-17 | 2011-11-16 | 高通股份有限公司 | Self-tuning of signal path delay in circuit employing multiple voltage domains |
| CN103856204A (en) * | 2012-12-05 | 2014-06-11 | 艾尔瓦特集成电路科技（天津）有限公司 | Integrated circuit, integrated circuit starting method and voltage selection circuit |
-
2015
- 2015-05-26 CN CN201510292905.5A patent/CN104868906A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1033427A (en) * | 1987-12-03 | 1989-06-14 | 内蒙古自治区赤峰红山机电研究所 | Protector circuit against electric leakage |
| CN102246236A (en) * | 2008-12-17 | 2011-11-16 | 高通股份有限公司 | Self-tuning of signal path delay in circuit employing multiple voltage domains |
| CN103856204A (en) * | 2012-12-05 | 2014-06-11 | 艾尔瓦特集成电路科技（天津）有限公司 | Integrated circuit, integrated circuit starting method and voltage selection circuit |
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Application publication date: 20150826 |