CN104868031A - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
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- CN104868031A CN104868031A CN201510167357.3A CN201510167357A CN104868031A CN 104868031 A CN104868031 A CN 104868031A CN 201510167357 A CN201510167357 A CN 201510167357A CN 104868031 A CN104868031 A CN 104868031A
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- Prior art keywords
- electrode
- layer
- luminescent device
- electrode layer
- insulating barrier
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- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 230000004888 barrier function Effects 0.000 claims description 27
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 description 10
- 229910052725 zinc Inorganic materials 0.000 description 8
- 239000011701 zinc Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 229910003437 indium oxide Inorganic materials 0.000 description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
- 229910052697 platinum Inorganic materials 0.000 description 6
- 229910052741 iridium Inorganic materials 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 5
- 229910052763 palladium Inorganic materials 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910005540 GaP Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- YZZNJYQZJKSEER-UHFFFAOYSA-N gallium tin Chemical compound [Ga].[Sn] YZZNJYQZJKSEER-UHFFFAOYSA-N 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- VRIVJOXICYMTAG-IYEMJOQQSA-L iron(ii) gluconate Chemical compound [Fe+2].OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O.OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O VRIVJOXICYMTAG-IYEMJOQQSA-L 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910019897 RuOx Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting device comprising a substrate (110); a reflective electrode layer (120) which is arranged on the substrate (110); a conductive semiconductor layer (130) which is arranged on the reflective electrode layer (120); a first electrode (180) which is arranged on the reflective electrode layer (120) and is not contacted with the conductive semiconductor layer (130); an insulating layer (190) which covers the first electrode (180); an active layer (140) which is arranged on the conductive semiconductor layer (130) and a second electrode layer (150) which is arranged on the active layer (140); and a second electrode (160) which is arranged on the second electrode layer (150) and the insulating layer (190). Current diffusion between the first electrode and the conductive semiconductor layer is effectively enhanced by utilizing the reflective electrode layer. Besides, the reflective electrode layer has the reflection characteristic, and reflection efficiency can be improved so that light emission efficiency of the light-emitting device is effectively enhanced.
Description
Technical field
The present invention relates to a kind of luminescent device.
Background technology
LED (light-emitting diode) is by the semiconductor device of current conversion Cheng Guang.Radiative wavelength changes based on semi-conducting material used, more specifically based semiconductor material band gap and change.Iii-v nitride-based semiconductor has been widely used for optics such as blue/green LED (light-emitting diode), high-speed switching devices such as MOSFET (metal-semiconductor field effect transistor) and HEMT (HFET), illumination or the light source etc. of display unit.
Nitride-based semiconductor is mainly used in LED (light-emitting diode) or LD (laser diode), continue the manufacturing process carrying out studying to improve nitride-based semiconductor or optical efficiency, comprise the improvement of the design of LED, performance and manufacture method.
Summary of the invention
In order to solve above-mentioned prior art Problems existing, the object of the present invention is to provide a kind of luminescent device, comprising: substrate; Reflection electrode layer, is arranged over the substrate; Conductive-type semiconductor layer, is arranged on described reflection electrode layer; First electrode, to be arranged on described reflection electrode layer and not to contact with described conductive-type semiconductor layer; Cover the insulating barrier of described first electrode; The second electrode lay being arranged on the active layer on described conductive-type semiconductor layer and being arranged on described active layer; Be arranged on the second electrode on described the second electrode lay and described insulating barrier.
Further, described luminescent device is also included in the first electrode layer on described second electrode.
Further, described first electrode layer is formed on described insulating barrier and described the second electrode lay.
Further, a part for described second electrode and described first electrode crossover under being arranged at described insulating barrier.
Further, described luminescent device also comprises with described second Electrode connection and at least one being arranged on described the second electrode lay second pads.
Further, a part for described first electrode layer is arranged between described second electrode and described second pad.
Further, described insulating barrier comprises opening to expose a part for described first electrode.
Further, described luminescent device also comprises the first pad on described first electrode that exposes in said opening.
Further, described opening is formed in described insulating barrier and described first electrode layer.
Further, described second pad directly contacts with described second electrode, described first electrode layer.
The present invention utilizes reflection electrode layer effectively to improve current spread between the first electrode and conductive-type semiconductor layer, and the reflection characteristic that reflection electrode layer has, can reflection efficiency be improved, effectively improve the luminous efficiency of luminescent device.
Accompanying drawing explanation
The following description carried out in conjunction with the drawings, the above-mentioned and other side of embodiments of the invention, feature and advantage will become clearly, in accompanying drawing:
Fig. 1 is the sectional view of luminescent device according to an embodiment of the invention.
Embodiment
Below, embodiments of the invention are described in detail with reference to the accompanying drawings.But, the present invention can be implemented in many different forms, and the present invention should not be interpreted as being limited to the specific embodiment of setting forth here.On the contrary, provide these embodiments to be to explain principle of the present invention and practical application thereof, thus enable others skilled in the art understand various embodiment of the present invention and be suitable for the various amendments of certain expected application.In the accompanying drawings, in order to know device, exaggerate the thickness in layer and region, identical label can be used to represent identical element in whole specification with accompanying drawing.
Fig. 1 is the sectional view of luminescent device according to an embodiment of the invention.
With reference to figure 1, luminescent device 100 comprises according to an embodiment of the invention: substrate 110, reflection electrode layer 120, conductive-type semiconductor layer 130, active layer 140, the second electrode lay 150, second electrode 160, first electrode layer 170, first electrode 180, insulating barrier 190, first pad 182 and the second pad 162.
Substrate 110 can comprise Al
2o
3, at least one in SiC, Si, GaAs, GaN, ZnO, GaP, InP and Ge.Substrate 110 can be used as conductive substrates.
Form reflection electrode layer 120 on a substrate 110.Reflection electrode layer 120 is formed by reflection electrode material, and reflection electrode material such as can comprise Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf or its combination.
Reflection electrode layer 120 is formed conductive-type semiconductor layer 130.Conductive-type semiconductor layer 130 comprises at least one semiconductor layer doped with conductiving doping agent, and comprises contact electrode layer.When conductive-type semiconductor layer 130 is n type semiconductor layers, conductive-type semiconductor layer 130 can comprise at least one in GaN, InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, GaP, GaAs, GaAsP or AlGaInP.Conductive-type semiconductor layer 130 can comprise individual layer or multilayer.When conductiving doping agent is N-type dopant, conductive-type semiconductor layer 130 can comprise Si, Ge, Sn, Se or Te.
Conductive-type semiconductor layer 130 is formed active layer 140.Active layer 140 can comprise Group III-V compound semiconductor.Active layer 140 can comprise at least one in single quantum, multi-quantum pit structure, quantum wire structure or quantum-dot structure.Well layer/the barrier layer of active layer 140 can comprise the pairing structure in InGaN/GaN, GaN/AlGaN or InGaN/InGaN, but embodiment is not limited thereto.Well layer can comprise the material of band gap lower than barrier layer band gap.
Active layer 140 is made up of the material of the band gap with the wavelength depending on the light sent.Such as, when wavelength is the blue light of 460 ~ 470nm, active layer 140 has the single quantum or multi-quantum pit structure that comprise InGaN well layer/GaN barrier layer.Active layer 140 optionally comprises the material of light such as blue light, red light and the green light that can provide visual ray frequency band, and described material can change in embodiment technical scope.
Active layer 140 is formed the second electrode lay 150.The second electrode lay 150 can comprise transmissive electrode material and/or reflection electrode material.Electrode material can comprise at least one in transmissive electrode layer, reflection electrode layer and electrode structure.Transmissive electrode layer can comprise insulating material or electric conducting material, optionally comprises one of oxide and nitride.Transmissive electrode layer can comprise tin indium oxide (ITO), indium zinc oxide (IZO), indium oxide zinc-tin (IZTO), indium oxide aluminium zinc (IAZO), indium oxide gallium zinc (IGZO), indium oxide gallium tin (IGTO), aluminum zinc oxide (AZO), antimony tin (ATO), gallium oxide zinc (GZO), nitrogenize IZO (IZON), ZnO, IrOx, RuO
x, NiO, TiO
xand SnO
2in at least one, but embodiment is not limited thereto.Reflection electrode material can comprise Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf or its combination.
Reflection electrode layer 120 is formed the first electrode 180, the first electrode 180 forms insulating barrier 190.Insulating barrier 190 covers the first electrode 180, does not contact to make the first electrode 180 with conductive-type semiconductor layer 130, active layer 140.Opening 192 is formed at the part place of insulating barrier 190.In opening 192, expose the first electrode 180, and the first pad 182 can be formed.First pad 182 can not be formed.In this case, the first electrode is used as the first pad.
First electrode 180 and the first pad 182 can comprise at least one deck, described layer comprises at least one in Ti, Al, In, Ta, Pd, Co, Ni, Si, Ge, Ag, Rh, Au, Ir, Pt, W or Au or multiple mixture material, but embodiment is not limited to described material.Insulating barrier 130 can comprise SiO
2, Si
3n
4, Al
2o
3or TiO
2but embodiment is not limited thereto.
A part for first electrode 180 is formed the first pad 182.One first can be provided to pad or multiple pad.
The second electrode lay 150 and insulating barrier 130 are formed the second electrode 160.Second electrode 160 and insulating barrier 130 are formed the first electrode layer 170.
First electrode layer 170 is vertical overlapping on insulating barrier 130 with the first electrode 180.Second electrode 160 is vertical overlapping on insulating barrier 130 with the first electrode 180.A part for insulating barrier 130, second electrode 160 and the first electrode layer 170 is perpendicular to one another overlapping on the first electrode 180.
The second electrode lay 150 can be formed locally or can be formed on the whole upper surface of active layer 140 between the second electrode 160 and active layer 140.
First electrode layer 170 can comprise transmissive electrode material and/or reflection electrode material.Electrode material can comprise at least one in transmissive electrode layer, reflection electrode layer and electrode structure.Transmissive electrode layer can comprise insulating material or electric conducting material, optionally comprises one of oxide and nitride.Transmissive electrode layer can comprise at least one in tin indium oxide (ITO), indium zinc oxide (IZO), indium oxide zinc-tin (IZTO), indium oxide aluminium zinc (IAZO), indium oxide gallium zinc (IGZO), indium oxide gallium tin (IGTO), aluminum zinc oxide (AZO), antimony tin (ATO), gallium oxide zinc (GZO), nitrogenize IZO (IZON), ZnO, IrOx, RuOx, NiO, TiOx and SnO2, but embodiment is not limited thereto.First electrode layer 170 provides with the form of film comprising metal such as Au or Al, thus can pass through light.Reflection electrode material can comprise Ag, Ni, Al, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au, Hf or its combination.
At least one in the second electrode lay 150 and the first electrode layer 170 can comprise the reflector with Al, Ag, Pd, Rh or Pt.In this case, when by flip scheme chip, reflection efficiency can be improved.
A part for second electrode 160 has arm shape or branched structure, and is formed on the second electrode lay 150 and insulating barrier 130.Second electrode 160 is connected with active layer 140 by the second electrode lay 150.
First pad 182 is formed on the first electrode 180 by the opening 192 of the first electrode layer 170.Second pad 162 can be formed on the second electrode 160, and a part for the second pad 162 is formed on the first electrode layer 170, and vertical overlapping with the second electrode 160.
Second pad 162 and the second electrode 160 can comprise at least one deck, and described layer comprises at least one in Ag, Ag alloy, Ni, Al, Al alloy, Rh, Pd, Ir, Ru, Mg, Zn, Pt, Au and Hf or its mixture, but embodiment is not limited thereto.
Second electrode 160 provides the first electrode layer 170, prevents the second electrode 160 from peeling off thus.In addition, provide the stacked structure of the first electrode 180/ insulating barrier 130/ second electrode 160/ first electrode layer 170, make a part for the first electrode 180 and the second electrode 160 can be perpendicular to one another overlapping.Luminescent device 100 prevents light-emitting area from reducing, and improves external quantum efficiency thus.
Reflection electrode layer 120 effectively improves the current spread between the first electrode 180 and conductive-type semiconductor layer 130, and the reflection characteristic that reflection electrode layer 120 has, can reflection efficiency be improved, effectively improve the luminous efficiency of luminescent device 100.
Although illustrate and describe the present invention with reference to specific embodiment, but it should be appreciated by those skilled in the art that: when not departing from the spirit and scope of the present invention by claim and equivalents thereof, the various changes in form and details can be carried out at this.
Claims (10)
1. a luminescent device, is characterized in that, comprising:
Substrate (110);
Reflection electrode layer (120), is arranged on described substrate (110);
Conductive-type semiconductor layer (130), is arranged on described reflection electrode layer (120);
First electrode (180), is arranged on described reflection electrode layer (120) and goes up and do not contact with described conductive-type semiconductor layer (130);
Cover the insulating barrier (190) of described first electrode (180);
The second electrode lay (150) being arranged on the active layer (140) on described conductive-type semiconductor layer (130) and being arranged on described active layer (140);
Be arranged on the second electrode (160) on described the second electrode lay (150) and described insulating barrier (190).
2. luminescent device according to claim 1, is characterized in that, described luminescent device is also included in the first electrode layer (170) on described second electrode (160).
3. luminescent device according to claim 2, is characterized in that, described first electrode layer (170) is formed on described insulating barrier (190) and described the second electrode lay (150).
4. luminescent device according to claim 1, is characterized in that, a part for described second electrode (160) is overlapping with described first electrode (180) be arranged under described insulating barrier (190).
5. luminescent device according to claim 1, it is characterized in that, described luminescent device also comprises and to be connected with described second electrode (160) and at least one being arranged on described the second electrode lay (150) second pads (162).
6. luminescent device according to claim 2, is characterized in that, a part for described first electrode layer (170) is arranged between described second electrode (160) and described second pad (162).
7. luminescent device according to claim 2, is characterized in that, described insulating barrier (190) comprises opening (192) to expose a part for described first electrode (180).
8. luminescent device according to claim 7, is characterized in that, described luminescent device is also included in the first pad (182) on described first electrode (180) that exposes in described opening (192).
9. luminescent device according to claim 7, is characterized in that, described opening (192) is formed in described insulating barrier (190) and described first electrode layer (170).
10. luminescent device according to claim 6, is characterized in that, described second pad (162) directly contacts with described second electrode (160), described first electrode layer (170).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510167357.3A CN104868031B (en) | 2015-04-09 | 2015-04-09 | A kind of luminescent device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510167357.3A CN104868031B (en) | 2015-04-09 | 2015-04-09 | A kind of luminescent device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104868031A true CN104868031A (en) | 2015-08-26 |
| CN104868031B CN104868031B (en) | 2018-01-16 |
Family
ID=53913727
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510167357.3A Active CN104868031B (en) | 2015-04-09 | 2015-04-09 | A kind of luminescent device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104868031B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1210373A (en) * | 1997-07-23 | 1999-03-10 | 夏普公司 | Semiconductor light emitting device |
| CN101681969A (en) * | 2007-06-29 | 2010-03-24 | 欧司朗光电半导体有限公司 | Method for the production of a plurality of optoelectronic components, and optoelectronic component |
| CN102176502A (en) * | 2007-04-26 | 2011-09-07 | 奥斯兰姆奥普托半导体有限责任公司 | Opto-electronic semiconductor body and method for the production thereof |
| CN103247743A (en) * | 2013-05-24 | 2013-08-14 | 安徽三安光电有限公司 | Veneering type lighting device and manufacturing method thereof |
| CN103311261A (en) * | 2013-05-24 | 2013-09-18 | 安徽三安光电有限公司 | Integrated LED (Light Emitting Diode) light emitting device and manufacturing method thereof |
| CN103378254A (en) * | 2012-04-27 | 2013-10-30 | 晶元光电股份有限公司 | Light-emitting component |
-
2015
- 2015-04-09 CN CN201510167357.3A patent/CN104868031B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1210373A (en) * | 1997-07-23 | 1999-03-10 | 夏普公司 | Semiconductor light emitting device |
| CN102176502A (en) * | 2007-04-26 | 2011-09-07 | 奥斯兰姆奥普托半导体有限责任公司 | Opto-electronic semiconductor body and method for the production thereof |
| CN101681969A (en) * | 2007-06-29 | 2010-03-24 | 欧司朗光电半导体有限公司 | Method for the production of a plurality of optoelectronic components, and optoelectronic component |
| CN103378254A (en) * | 2012-04-27 | 2013-10-30 | 晶元光电股份有限公司 | Light-emitting component |
| CN103247743A (en) * | 2013-05-24 | 2013-08-14 | 安徽三安光电有限公司 | Veneering type lighting device and manufacturing method thereof |
| CN103311261A (en) * | 2013-05-24 | 2013-09-18 | 安徽三安光电有限公司 | Integrated LED (Light Emitting Diode) light emitting device and manufacturing method thereof |
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|---|---|
| CN104868031B (en) | 2018-01-16 |
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