CN104867899A - Lead wire frame realizing high-density pins - Google Patents
Lead wire frame realizing high-density pins Download PDFInfo
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- CN104867899A CN104867899A CN201510190942.5A CN201510190942A CN104867899A CN 104867899 A CN104867899 A CN 104867899A CN 201510190942 A CN201510190942 A CN 201510190942A CN 104867899 A CN104867899 A CN 104867899A
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- control chip
- chip framework
- framework
- power chip
- lead frame
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Abstract
The invention discloses a lead wire frame realizing high-density pins. The lead wire frame comprises a control chip frame and a power chip frame. The control chip frame is provided with control chip pins, the power chip frame is provided with power chip pins, and the thickness of the control chip frame is smaller than the thickness of the power chip frame. According to the invention, the control chip frame portion and the power chip frame portion of the lead wire frame employ materials of different thicknesses, such that the multi-pin requirement of a control chip is met, and heat dissipation and high current carrying capabilities of the power chip pins can also be realized.
Description
Technical field
The present invention relates to field of semiconductor fabrication processes, be specifically related to a kind of lead frame, particularly relate to a kind of lead frame realizing high-density pin.
Background technology
At present, in field of semiconductor fabrication processes, lead frame is as the chip carrier of integrated circuit, realize the electrical connection of chip internal circuits exit and outer lead, form the key structure part of electric loop, it serves the function served as bridge be connected with outer lead, all needs to use lead frame in the semiconductor integrated circuit of the overwhelming majority.
In semiconductor integrated circuit, to realize control and the output of power, power chip and control chip often need to be encapsulated in same semiconductor.In general, the number of pin demand of control chip is larger; Power chip is to the quantity of pin without too large demand, and what it was paid close attention to is the heat radiation of pin and high current carrying capacity.
In prior art, lead frame is adding man-hour, requires the thinner pin that could etch or stamp out high-density array smoothly of material thickness, but the thickness of lead frame carries out selecting with reference to the heat radiation of pin and high current carrying capacity often.So, the number of pin of control chip is limited greatly, and often needing increases other lead frame or other some electronic devices and components, to expand the number of pin of control chip, but will certainly increase the manufacturing cost of product and increase the volume of product.
Summary of the invention
The object of the invention is to propose a kind of lead frame realizing high-density pin, solve above technical problem.
For reaching this object, the present invention by the following technical solutions:
The invention provides a kind of lead frame realizing high-density pin, comprising: control chip framework and power chip framework;
Described control chip framework is provided with control chip pin; Described power chip framework is provided with power chip pin;
The thickness of described control chip framework is less than the thickness of described power chip framework.
Preferably, described control chip framework and described power chip framework are Split type structure;
Described control chip framework comprises the first link for connecting described power chip framework; Described power chip framework comprises the second link for connecting described control chip framework;
Described first link is fixedly connected with described second link.
Preferably, described second link is provided with groove;
Described first link is arranged in described groove.
Preferably, described first link is fixedly connected with described second link by riveted joint, mode that is bonding or welding.
Preferably, the little 0.1-0.4 millimeter of thickness of power chip framework described in the Thickness Ratio of described control chip framework.
Preferably, the thickness of described control chip framework is 0.1-0.9 millimeter.
Preferably, the thickness of described control chip framework is 0.2 millimeter, and the thickness of described power chip framework is 0.5 millimeter.
Preferably, described control chip framework and described power chip framework are structure as a whole.
Beneficial effect of the present invention: the control chip frame part of lead frame and power chip frame part select the material of different-thickness, wherein, control chip framework adopts thinner material, be beneficial to the pin etching or stamp out high-density array, power chip framework adopts thicker material, to strengthen the ability of heat radiation and high current load, so, the multi-pipe pin demand of control chip can be met, also can realize the heat radiation of power chip pin and the ability of high current load.
Accompanying drawing explanation
The front view realizing the lead frame of high-density pin that Fig. 1 provides for the embodiment of the present invention.
The end view realizing a kind of structure of the lead frame of high-density pin that Fig. 2 provides for the embodiment of the present invention.
The end view realizing the another kind of structure of the lead frame of high-density pin that Fig. 3 provides for the embodiment of the present invention.
The end view realizing another structure of the lead frame of high-density pin that Fig. 4 provides for the embodiment of the present invention.
In figure: 10, control chip framework; 20, power chip framework; 11, control chip pin; 12, control chip base; 21, power chip pin; 22, power chip base; 23, groove.
Embodiment
Technical scheme of the present invention is further illustrated by embodiment below in conjunction with accompanying drawing.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content.
Technical scheme of the present invention is further illustrated by embodiment below in conjunction with accompanying drawing.
Please refer to Fig. 1, the front view realizing the lead frame of high-density pin that Fig. 1 provides for the embodiment of the present invention, this lead frame comprises: control chip framework 10 and power chip framework 20.
Control chip framework 10 is provided with control chip pin one 1 and control chip base 12; Power chip framework 20 is provided with power chip pin two 1 and power chip base 22.Wherein, the thickness of control chip framework 10 is less than the thickness of power chip framework 20.
Control chip framework 10 adopts thinner material, be beneficial to the pin etching or stamp out high-density array, power chip framework 20 adopts thicker material, to strengthen the ability of heat radiation and high current load, so, the multi-pipe pin demand of control chip can be met, also can realize the heat radiation of power chip pin and the ability of high current load.
Concrete, control chip framework 10 and power chip framework 20 can adopt Split type structure, also can adopt integrative-structure.
Please refer to Fig. 2, the end view realizing a kind of structure of the lead frame of high-density pin that Fig. 2 provides for the embodiment of the present invention.
Control chip framework 10 shown in Fig. 2 and power chip framework 20 adopt Split type structure.Wherein, control chip framework 10 comprises the first link for connecting power chip framework 20; Power chip framework 20 comprises the second link for connection control chi frame 10; Described first link is fixedly connected with described second link.
Wherein, described first link and described second link by riveting, mode that is bonding or that weld is fixedly connected with.
Concrete, described first link is fixedly connected with described second link, in order to realize smooth effect or the visual effect of lead frame surface, described second link is provided with groove 23, described first link is arranged in groove 23, the degree of depth of groove 23 and the thickness of control chip framework 10 match, keep level and smooth to make the junction of described first link and described second link, realize smooth effect or the visual effect on the surface of the lead frame of control chip pin one 1 side, the degree of depth that namely groove 23 be set slightly larger than or equal the thickness of control chip framework 10.Please refer to Fig. 3, the end view realizing the another kind of structure of the lead frame of high-density pin that Fig. 3 provides for the embodiment of the present invention.Control chip framework 10 shown in Fig. 3 and power chip framework 20 adopt Split type structure.Wherein, described first link is arranged in groove 23, described first link and described second link by riveting, mode that is bonding or that weld is fixedly connected with.
Please refer to Fig. 4, the end view realizing another structure of the lead frame of high-density pin that Fig. 4 provides for the embodiment of the present invention.Control chip framework 10 shown in Fig. 4 and power chip framework 20 adopt integrative-structure.During processing lead frame, make control chip framework 10 thinning, be beneficial to the pin etching or stamp out high-density array; Power chip framework 20 still adopts thicker material, to strengthen the ability of heat radiation and high current load.
In general, the quantity of the number ratio power chip pin two 1 of control chip pin one 1 wants large, and in practical application, the quantitative requirement of different product pins is different, and the pin of control chip framework 10 is generally the 1-5 of the pin of power chip framework 20 doubly.
The density of chip pin is relevant with the material thickness of lead frame.At present, according to the technical merit of semiconducter process now, the minimum spacing between general chip pin is smaller or equal the thickness of lead frame, as, when the thickness of lead frame is 0.5 millimeter, the minimum spacing between chip pin is 0.5 millimeter or is slightly less than 0.5 millimeter.
Concrete, the thickness of control chip framework 10 is 0.1-0.9 millimeter.The little 0.1-0.4 millimeter of thickness of the Thickness Ratio power chip framework 20 of control chip framework 10.
More specifically, the thickness of control chip framework 10 is 0.2 millimeter, and the thickness of power chip framework 20 is 0.5 millimeter, so arranges, large more than 2 times of the quantity of the quantity comparable power chip pin two 1 of control chip pin one 1, can meet the demand of current most of power model semiconductor.
Concrete, lead frame adopts Cu alloy material.Cu alloy material has the many advantages such as conductive and heat-conductive rate is high, plating good, cheap.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, within the spirit and principles in the present invention all, any amendment done, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. realize a lead frame for high-density pin, it is characterized in that, comprise; Control chip framework and power chip framework;
Described control chip framework is provided with control chip pin; Described power chip framework is provided with power chip pin;
The thickness of described control chip framework is less than the thickness of described power chip framework.
2. lead frame according to claim 1, is characterized in that, described control chip framework and described power chip framework are Split type structure;
Described control chip framework comprises the first link for connecting described power chip framework; Described power chip framework comprises the second link for connecting described control chip framework;
Described first link is fixedly connected with described second link.
3. lead frame according to claim 2, is characterized in that, described second link is provided with groove;
Described first link is arranged in described groove.
4. lead frame according to claim 2, is characterized in that, described first link is fixedly connected with described second link by riveted joint, mode that is bonding or welding.
5. lead frame according to claim 1, is characterized in that, the little 0.1-0.4 millimeter of the thickness of power chip framework described in the Thickness Ratio of described control chip framework.
6. lead frame according to claim 5, is characterized in that, the thickness of described control chip framework is 0.1-0.9 millimeter.
7. lead frame according to claim 6, is characterized in that, the thickness of described control chip framework is 0.2 millimeter, and the thickness of described power chip framework is 0.5 millimeter.
8. lead frame according to claim 1, is characterized in that, described control chip framework and described power chip framework are structure as a whole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510190942.5A CN104867899A (en) | 2015-04-21 | 2015-04-21 | Lead wire frame realizing high-density pins |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510190942.5A CN104867899A (en) | 2015-04-21 | 2015-04-21 | Lead wire frame realizing high-density pins |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104867899A true CN104867899A (en) | 2015-08-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510190942.5A Pending CN104867899A (en) | 2015-04-21 | 2015-04-21 | Lead wire frame realizing high-density pins |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148213A (en) * | 2011-03-08 | 2011-08-10 | 日月光半导体（威海）有限公司 | Lead frame of high-power chip package structure and manufacturing method thereof |
| US20130105956A1 (en) * | 2011-10-31 | 2013-05-02 | Samsung Electro-Mechanics Co., Ltd. | Power module package and method for manufacturing the same |
| CN204651308U (en) * | 2015-04-21 | 2015-09-16 | 杰群电子科技（东莞）有限公司 | A kind of lead frame realizing high-density pin |
-
2015
- 2015-04-21 CN CN201510190942.5A patent/CN104867899A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102148213A (en) * | 2011-03-08 | 2011-08-10 | 日月光半导体（威海）有限公司 | Lead frame of high-power chip package structure and manufacturing method thereof |
| US20130105956A1 (en) * | 2011-10-31 | 2013-05-02 | Samsung Electro-Mechanics Co., Ltd. | Power module package and method for manufacturing the same |
| CN204651308U (en) * | 2015-04-21 | 2015-09-16 | 杰群电子科技（东莞）有限公司 | A kind of lead frame realizing high-density pin |
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Application publication date: 20150826 |
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| RJ01 | Rejection of invention patent application after publication |