CN104866155A - Sapphire cover plate graphene projected capacitance screen and preparation method - Google Patents
Sapphire cover plate graphene projected capacitance screen and preparation method Download PDFInfo
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Abstract
The invention discloses a sapphire cover plate graphene projected capacitance screen and a preparation method, and relates to the technical field of a capacitance screen. The sapphire cover plate graphene projected capacitance screen sequentially comprises a sapphire cover plate layer, a graphene work layer, an adhesive layer, a glass base plate layer and an ITO (Indium Tin Oxide) shielding layer, wherein the graphene work layer consists of an X-axis graphene matrix and a Y-axis graphene matrix, and a graphene matrix pattern is formed; the X-axis graphene matrix and the Y-axis graphene matrix are mutually crossed; all graphene units in the X-axis graphene matrix are pairwise connected in the X-axis direction; two ends of the X-axis graphene matrix are connected with X-axis metal lead wires; all graphene units in the Y-axis graphene matrix are pairwise and mutually connected in the Y-axis direction through a metal bridge; and the two ends of the Y-axis graphene matrix are connected with Y-axis metal lead wires. The sapphire cover plate graphene projected capacitance screen and the preparation method have the advantages that sapphire and graphene are reasonably combined; the abrasion resistance of the touch screen surface is improved; the manufacturing process is simplified through graphene application; the light transmittance is improved; and the manufacturing cost is reduced.
Description
Technical field
The present invention relates to capacitance plate technical field.
Background technology
It is large that sapphire has hardness, anti-scratch, good heat resistance, and the advantages such as light transmission height and chemical stabilization, can replace traditional glass material makes touch screen protective cover plate, meets mobile phone, the demand of the electronic product shatter-resistant anti-scratch such as wrist-watch.Graphene is the hexagonal structure be made up of carbon atom, has good light transmission, electric conductivity and mechanical property, has the advantage of high sensitivity, frivolous, high transmission rate, high conductivity and low cost.Single-layer graphene transmittance reaches 97.7%, is highly suitable for the research of transparent conductive film.Present stage, make touch-screen working lining and mainly utilize ITO, and the indium metal contained in ITO content is on earth limited, expensive, especially toxicity is very large, and its application is restricted.As the nova of carbonaceous material, Graphene is considered to the equivalent material of ITO due to the feature having low dimension and can form infiltration conductance network under low-density condition, is applied to touch-screen aspect.In addition, Graphene, as capacitance plate conductive layer, avoids the gold-tinted making technology of complexity, high cost.For this reason, this programme, by sapphire and Graphene reasonable combination, has designed and developed a kind of novel sapphire cover plate Graphene projecting type capacitor screen structure.
Summary of the invention
Technical matters to be solved by this invention is to provide a kind of sapphire cover plate Graphene projecting type capacitor screen and preparation method, sapphire and Graphene are reasonably combined, improve the wearing quality of touch screen surface, the application of Graphene simplifies manufacture craft, improve transmittance, reduce cost of manufacture.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of sapphire cover plate Graphene projecting type capacitor screen, comprise sapphire cover layer (1) from top to bottom successively, Graphene working lining (2), adhering agent layer (3), glass substrate layer (4) and ITO screen layer (5), at Sapphire Substrate Epitaxial growth single or multiple lift Graphene working lining (2) of sapphire cover layer (1), Graphene working lining (2) covers adhering agent layer (3) successively, glass substrate layer (4) and ITO screen layer (5), described Graphene working lining (2) is made up of X-axis Graphene matrix and Y-axis Graphene matrix, form Graphene matrix pattern, X-axis Graphene matrix and Y-axis Graphene matrix intersect mutually, each Graphene unit (9) in described X-axis Graphene matrix is interconnected in the X-axis direction between any two, and X-axis Graphene matrix two ends are connected with X-axis metal lead wire (6) respectively, each Graphene unit (9) in described Y-axis Graphene matrix is in the Y-axis direction between any two by metal bridge (8) bridge joint mutually, and Y-axis Graphene matrix two ends are connected with Y-axis metal lead wire (7) respectively.
Further, described metal bridge (8) and described X-axis Graphene matrix intersection are provided with insulation filling material (10).
Further, described adhering agent layer (3) is OCA optical cement layer, and its thickness is 0.001-10mm.
Further, described sapphire cover plate adopts twin polishing sapphire, and the thickness of described glass substrate layer (4) is 0.1-1000 μm, and the thickness of described ITO screen layer (5) is 0.1-1000 μm.
A kind of sapphire cover plate Graphene projecting type capacitor screen preparation method, comprises the following steps:
1) select the Sapphire Substrate of twin polishing, epitaxial growth single or multiple lift grapheme material on a sapphire substrate, form Graphene working lining (2);
2) Graphene working lining (2) is processed, laser direct-writing etching or metal mask is adopted to add reactive ion etching technology, etch X-axis Graphene matrix and Y-axis Graphene matrix, each Graphene unit in its X-axis Graphene matrix is interconnected in the X-axis direction between any two, and each Graphene unit in Y-axis Graphene matrix is not connected in the Y-axis direction between any two;
3) X, Y-axis Graphene matrix edge connect with X, Y-axis metal lead wire respectively;
4) bridging technique is adopted by each Graphene unit in Y-axis Graphene matrix in the Y-axis direction between any two by the mutual bridge joint of metal bridge, metal bridge and described X-axis Graphene matrix intersection are provided with insulation filling material, avoid the contact between metal bridge and X-axis Graphene matrix;
5) cover OCA optical cement oxidant layer Graphene working lining (2) is upper, can to thicken according to the actual requirements or thinning;
6) cover glass substrate in OCA optical cement layer, can thicken or thinning according to the actual requirements;
7) cover ITO screen layer on the glass substrate, can to thicken according to the actual requirements or thinning;
8) be inverted by the device architecture after processing, Sapphire Substrate, as touch screen protective cover plate, namely completes the making of sapphire cover plate Graphene projecting type capacitor screen device.
Further, in described step 1), Graphene working lining (2) can also transfer in Sapphire Substrate by growing single or multiple lift Graphene on other substrates, or by the Graphene spin coating of oxidation on a sapphire substrate.
Further, described CA optical cement layer thickness is 0.001-10mm, and the thickness of described glass substrate layer (4) is 0.1-1000 μm, and the thickness of described ITO screen layer (5) is 0.1-1000 μm.
The beneficial effect adopting technique scheme to produce is: the present invention has prepared novel projecting type capacitor screen in conjunction with the advantage of sapphire and Graphene, touch screen protective cover plate is made by the sapphire material of novel high rigidity, remain original glass substrate simultaneously, improve the wearing quality of touch screen surface; Graphene replaces traditional tin indium oxide (ITO) and prepares capacitance plate, Graphene is as capacitance plate conductive layer, avoid the gold-tinted making technology of complexity, high cost, direct employing laser direct-writing etching or metal mask add reactive ion etching process pattern-making, more convenient, the efficient and low cost of technique; Wherein, Graphene working lining is made up of the pattern of two groups of different directions, forms matrix form distribution, with X-axis, Y-axis cross-distribution as capacitance matrix, when pointing touching screen, by the scanning of X, Y-axis, the change of touch position electric capacity detected, and then calculate the position of finger contact point; Based on this kind of principle, projecting type capacitor can accomplish multi-point touch operation.Between Graphene working lining and glass substrate, have adhering agent layer, this adhering agent layer can eliminate the working lining surface irregularity that metal bridge is brought, and makes can entirely fit between Graphene working lining and glass substrate.
Accompanying drawing explanation
Fig. 1 is the overall stratiform structural representation of the present invention;
Fig. 2 is the Graphene matrix pattern structural representation of Graphene working lining 2 in Fig. 1;
Fig. 3 is the partial enlarged drawing in Fig. 2;
Wherein, 1 sapphire cover layer, 2 Graphene working linings, 3 adhering agent layers, 4 glass substrate layer, 5ITO screen layer, 6X axle metal lead wire, 7Y axle metal lead wire, 8 metal bridge, 9 Graphene unit, 10 insulation filling materials.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
As shown in Figure 1, Figure 2 and Figure 3, the present invention is a kind of sapphire cover plate Graphene projecting type capacitor screen, comprise sapphire cover layer 1, Graphene working lining 2, adhering agent layer 3, glass substrate layer 4 and ITO screen layer 5 from top to bottom successively, at the Sapphire Substrate Epitaxial growth single or multiple lift Graphene working lining 2 of sapphire cover layer 1, Graphene working lining 2 covers adhering agent layer 3, glass substrate layer 4 and ITO screen layer 5 successively, described Graphene working lining 2 is made up of X-axis Graphene matrix and Y-axis Graphene matrix, forms Graphene matrix pattern; X-axis Graphene matrix and Y-axis Graphene matrix intersect mutually, each Graphene unit 9 in described X-axis Graphene matrix is interconnected in the X-axis direction between any two, and X-axis Graphene matrix two ends are connected with X-axis metal lead wire 6 respectively, each Graphene unit 9 in described Y-axis Graphene matrix is in the Y-axis direction between any two by metal bridge 8 bridge joint mutually, and Y-axis Graphene matrix two ends are connected with Y-axis metal lead wire 7 respectively; Described metal bridge 8 is provided with insulation filling material 10 with described X-axis Graphene matrix intersection; Described adhering agent layer 3 is OCA optical cement layer, and its thickness is 0.001-10mm; Described sapphire cover plate adopts twin polishing sapphire, and the thickness of described glass substrate layer 4 is 0.1-1000 μm, and the thickness of described ITO screen layer 5 is 0.1-1000 μm.
The present invention is a kind of sapphire cover plate Graphene projecting type capacitor screen preparation method, comprises the following steps:
1) Sapphire Substrate of twin polishing is selected, epitaxial growth single or multiple lift grapheme material on a sapphire substrate, form Graphene working lining, Graphene working lining can also transfer in Sapphire Substrate by growing single or multiple lift Graphene on other substrates, or by the Graphene spin coating of oxidation on a sapphire substrate;
2) Graphene working lining is processed, laser direct-writing etching or metal mask is adopted to add reactive ion etching technology, etch X-axis Graphene matrix and Y-axis Graphene matrix, each Graphene unit in its X-axis Graphene matrix is interconnected in the X-axis direction between any two, and each Graphene unit in Y-axis Graphene matrix is not connected in the Y-axis direction between any two;
3) X, Y-axis Graphene matrix edge connect with X, Y-axis metal lead wire respectively;
4) bridging technique is adopted by each Graphene unit in Y-axis Graphene matrix in the Y-axis direction between any two by the mutual bridge joint of metal bridge, metal bridge and described X-axis Graphene matrix intersection are provided with insulation filling material, avoid the contact between metal bridge and X-axis Graphene matrix;
5) on Graphene working lining, cover adhering agent layer, i.e. OCA optical cement layer, its thickness is 0.001-10mm, can to thicken according to the actual requirements or thinning;
6) cover glass substrate in OCA optical cement layer, thickness, between 0.1-1000 μm, can to thicken or thinning according to the actual requirements;
7) cover ITO screen layer on the glass substrate, thickness, between 0.1-1000 μm, can to thicken or thinning according to the actual requirements;
8) be inverted by the device architecture after processing, sapphire, as touch screen protective cover plate, namely completes the making of sapphire cover plate Graphene projecting type capacitor screen device.
Principle of work of the present invention:
The present invention has prepared novel projecting type capacitor screen in conjunction with the advantage of sapphire and Graphene, makees touch screen protective cover plate, remains original glass substrate simultaneously, improve the wearing quality of touch screen surface by the sapphire material of novel high rigidity; Graphene replaces traditional tin indium oxide (ITO) and prepares capacitance plate, Graphene is as capacitance plate conductive layer, avoid the gold-tinted making technology of complexity, high cost, direct employing laser direct-writing etching or metal mask add reactive ion etching process pattern-making, more convenient, the efficient and low cost of technique; Wherein, Graphene working lining is made up of the pattern of two groups of different directions, forms matrix form distribution, with X-axis, Y-axis cross-distribution as capacitance matrix, when pointing touching screen, by the scanning of X, Y-axis, the change of touch position electric capacity detected, and then calculate the position of finger contact point; Based on this kind of principle, projecting type capacitor can accomplish multi-point touch operation.Between Graphene working lining and glass substrate, have adhering agent layer, this adhering agent layer can eliminate the working lining surface irregularity that metal bridge is brought, and makes can entirely fit between Graphene working lining and glass substrate.
Claims (7)
1. a sapphire cover plate Graphene projecting type capacitor screen, it is characterized in that: comprise sapphire cover layer (1) from top to bottom successively, Graphene working lining (2), adhering agent layer (3), glass substrate layer (4) and ITO screen layer (5), at Sapphire Substrate Epitaxial growth single or multiple lift Graphene working lining (2) of sapphire cover layer (1), Graphene working lining (2) covers adhering agent layer (3) successively, glass substrate layer (4) and ITO screen layer (5), described Graphene working lining (2) is made up of X-axis Graphene matrix and Y-axis Graphene matrix, form Graphene matrix pattern, X-axis Graphene matrix and Y-axis Graphene matrix intersect mutually, each Graphene unit (9) in described X-axis Graphene matrix is interconnected in the X-axis direction between any two, and X-axis Graphene matrix two ends are connected with X-axis metal lead wire (6) respectively, each Graphene unit (9) in described Y-axis Graphene matrix is in the Y-axis direction between any two by metal bridge (8) bridge joint mutually, and Y-axis Graphene matrix two ends are connected with Y-axis metal lead wire (7) respectively.
2. a kind of sapphire cover plate Graphene projecting type capacitor screen according to claim 1, is characterized in that: described metal bridge (8) and described X-axis Graphene matrix intersection are provided with insulation filling material (10).
3. a kind of sapphire cover plate Graphene projecting type capacitor screen according to claim 1, is characterized in that: described adhering agent layer (3) is OCA optical cement layer, and its thickness is 0.001-10mm.
4. a kind of sapphire cover plate Graphene projecting type capacitor screen according to claim 1, it is characterized in that: described sapphire cover plate adopts twin polishing sapphire, the thickness of described glass substrate layer (4) is 0.1-1000 μm, and the thickness of described ITO screen layer (5) is 0.1-1000 μm.
5. the preparation method of a kind of sapphire cover plate Graphene projecting type capacitor screen according to claim 1, is characterized in that: comprise the following steps:
1) select the Sapphire Substrate of twin polishing, epitaxial growth single or multiple lift grapheme material on a sapphire substrate, form Graphene working lining (2);
2) Graphene working lining (2) is processed, laser direct-writing etching or metal mask is adopted to add reactive ion etching technology, etch X-axis Graphene matrix and Y-axis Graphene matrix, each Graphene unit in its X-axis Graphene matrix is interconnected in the X-axis direction between any two, and each Graphene unit in Y-axis Graphene matrix is not connected in the Y-axis direction between any two;
3) X, Y-axis Graphene matrix edge connect with X, Y-axis metal lead wire respectively;
4) bridging technique is adopted by each Graphene unit in Y-axis Graphene matrix in the Y-axis direction between any two by the mutual bridge joint of metal bridge, metal bridge and described X-axis Graphene matrix intersection are provided with insulation filling material, avoid the contact between metal bridge and X-axis Graphene matrix;
5) cover OCA optical cement oxidant layer Graphene working lining (2) is upper, can to thicken according to the actual requirements or thinning;
6) cover glass substrate in OCA optical cement layer, can thicken or thinning according to the actual requirements;
7) cover ITO screen layer on the glass substrate, can to thicken according to the actual requirements or thinning;
8) be inverted by the device architecture after processing, Sapphire Substrate, as touch screen protective cover plate, namely completes the making of sapphire cover plate Graphene projecting type capacitor screen device.
6. a kind of sapphire cover plate Graphene projecting type capacitor screen preparation method according to claim 5, it is characterized in that: in described step 1), Graphene working lining (2) can also transfer in Sapphire Substrate by growing single or multiple lift Graphene on other substrates, or by the Graphene spin coating of oxidation on a sapphire substrate.
7. a kind of sapphire cover plate Graphene projecting type capacitor screen preparation method according to claim 5, it is characterized in that: described CA optical cement layer thickness is 0.001-10mm, the thickness of described glass substrate layer (4) is 0.1-1000 μm, and the thickness of described ITO screen layer (5) is 0.1-1000 μm.
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| CN107037933A (en) * | 2016-02-04 | 2017-08-11 | 中国科学院金属研究所 | A kind of preparation method of the grapheme capacitive touch screen of three layers of transparent electrode structure |
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| CN113253242A (en) * | 2021-06-03 | 2021-08-13 | 宁波永新光学股份有限公司 | Window assembly mounted on vehicle-mounted laser radar |
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