CN102722277B - The method for making of touch-screen and touch-screen - Google Patents
The method for making of touch-screen and touch-screen Download PDFInfo
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- CN102722277B CN102722277B CN201210086965.8A CN201210086965A CN102722277B CN 102722277 B CN102722277 B CN 102722277B CN 201210086965 A CN201210086965 A CN 201210086965A CN 102722277 B CN102722277 B CN 102722277B
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- protective seam
- conductive layer
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0446—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a grid-like structure of electrodes in at least two directions, e.g. using row and column electrodes
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
- G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
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- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Position Input By Displaying (AREA)
Abstract
The invention provides a kind of method for making and touch-screen of touch-screen, relate to display field, invent for solving the technical matters of the manufacture craft more complicated of touch-screen in prior art.The method for making of described touch-screen comprises: plated metal on substrate, and through first time patterning processes, form metal layer pattern, described metal layer pattern comprises the bridging line of viewing area; Use the first protective material to carry out inkjet printing on the substrate being formed with described metal layer pattern, to be deposited in described bridging line by described first protective material, form the first protective seam pattern; Deposit transparent conductive material on the substrate being formed with described first protective seam pattern, and through second time patterning processes, form pattern for transparent conductive layer; Deposition of insulative material on the substrate being formed with described pattern for transparent conductive layer, and through third time patterning processes, form the second protective seam pattern.The present invention can simplify the processing procedure of touch-screen.
Description
Technical field
The present invention relates to moving communicating field, refer to a kind of method for making and touch-screen of touch-screen especially.
Background technology
Touch-screen can be divided into resistance-type and condenser type two kinds.Due to capacitive touch screen, there is high responsive, long-life and support multiple point touching, becoming main flow touching technique at present.And capacitive touch screen is divided into self-induction type touch-screen and mutual inductance type touch-screen.Below introduce the method for making of several mutual inductance type touch-screen:
1, double-deck indium tin oxide ITO (also can be other pattern for transparent conductive layer) touch-screen: 5Mask (light shield) pattern
Transversal I TO layer and vertical ITO adopt twice deposition, twice mask respectively.Transversal I TO and the insulation course such as vertical ITO SiNx (silicon nitride) or OC (organic insulator) separate, and finally also need layer protective layer.Add Metal conductive layer and via hole Via Hole, double-deck ITO touch-screen needs following operation: Metal (plated metal) → ITO
1→ SiNx (OC)
1via Hole → ITO
2→ SiNx (OC)
2, altogether need 5 Mask (light shield), processing procedure is comparatively complicated.
2, individual layer ITO touch-screen 4Mask---Via Hole crosses hole pattern
Transversal I TO and vertical ITO adopts same layer deposition, adopts one deck Metal, does bridge joint by via hole, and link together the ITO disconnecting direction (can be laterally, also can be vertical).Concrete steps are ITO → SiNx (OC)
1via Hole → Metal → SiNx (OC)
2, 4 Mask altogether.
Another kind of way is: by Metal Mask and ITO Mask location swap, Metal → SiNx (OC)
1via Hole → ITO → SiNx (OC)
2.
3, individual layer ITO touch-screen 4Mask---Island island pattern
Island pattern is, at SiNx (OC) with the difference crossing hole pattern processing procedure
1when etching or development, the insulation course of the SiNx (OC) of transversal I TO and vertical ITO cross section is retained, and the insulation course of all the other positions is all removed, ITO → SiNx (OC)
1island → Metal → SiNx (OC), totally 4 Mask.
The same with crossing hole pattern, this processing procedure also can by Metal Mask and ITO Mask location swap, that is: Metal → SiNx (OC)
1island → ITO → SiNx (OC)
2.
As can be seen from the above, the making technology more complicated of existing touch-screen.
Summary of the invention
The technical problem to be solved in the present invention is to provide a kind of method for making and touch-screen of touch-screen, can simplify making technology.
For solving the problems of the technologies described above, embodiments of the invention provide technical scheme as follows:
On the one hand, a kind of method for making of touch-screen is provided, comprises:
Plated metal on substrate, and through first time patterning processes, form metal layer pattern, described metal layer pattern comprises the bridging line of viewing area;
Use the first protective material to carry out inkjet printing on the substrate being formed with described metal layer pattern, to be deposited in described bridging line by described first protective material, form the first protective seam pattern;
Deposit transparent conductive material on the substrate being formed with described first protective seam pattern, and through second time patterning processes, form pattern for transparent conductive layer;
Deposition of insulative material on the substrate being formed with described pattern for transparent conductive layer, and through third time patterning processes, form the second protective seam pattern.
Described first protective seam pattern is island; And the thickness of described first protective seam pattern is greater than the thickness of described metal layer pattern; The width of described first protective seam pattern is less than the width of described metal layer pattern, the first side making described metal layer pattern relative and the second side exposed; The length of described first protective seam pattern is greater than the length of described metal layer pattern, and the 3rd side making described metal layer pattern relative and the 4th side are capped;
The scope of described pattern for transparent conductive layer is greater than the scope of described first protective seam pattern, makes described pattern for transparent conductive layer and described metal layer pattern in the position electrical connection of relative the first side of described metal layer pattern and the second side.
Described metal layer pattern also comprises: the circuit line of welding disking area;
Described pattern for transparent conductive layer comprises: the pattern for transparent conductive layer of welding disking area and the pattern for transparent conductive layer of viewing area;
The pattern for transparent conductive layer of viewing area described in described second protective seam pattern covers, and the pattern for transparent conductive layer of exposed described welding disking area.
Described pattern for transparent conductive layer is indium tin oxide layer;
Described first protective seam pattern and described second protective seam pattern are made up of allyl resin and epoxy resin, or described first protective seam pattern and described second protective seam pattern are made up of silicon nitride.
The shape of described pattern for transparent conductive layer is rhombus.
On the other hand, a kind of touch-screen is provided, comprises:
Substrate;
Metal layer pattern, be through on the substrate plated metal and through first time patterning processes formed, described metal layer pattern comprises the bridging line of viewing area;
First protective seam pattern, is through use first protective material and on the substrate being formed with described metal layer pattern, carries out inkjet printing formed with the technique be deposited in described bridging line by described first protective material;
Pattern for transparent conductive layer, is through deposit transparent conductive material on the substrate being formed with described first protective seam pattern and is formed through second time patterning processes; And
Second protective seam pattern, is through deposition of insulative material on the substrate being formed with described pattern for transparent conductive layer and process third time patterning processes is formed.
Described first protective seam pattern is island; And the thickness of described first protective seam pattern is greater than the thickness of described metal layer pattern; The width of described first protective seam pattern is less than the width of described metal layer pattern, the first side making described metal layer pattern relative and the second side exposed;
The scope of described pattern for transparent conductive layer is greater than the scope of described first protective seam pattern, makes described pattern for transparent conductive layer and described metal layer pattern in the position electrical connection of relative the first side of described metal layer pattern and the second side.
On the other hand, a kind of method for making of touch-screen is provided, comprises:
Deposit transparent conductive material on substrate, and through first time patterning processes, form pattern for transparent conductive layer, described pattern for transparent conductive layer includes the horizontal scan line of viewing area and vertical sweep trace;
Use the first protective material to carry out inkjet printing on the substrate being formed with described pattern for transparent conductive layer, to be deposited on the node of described horizontal scan line and vertical sweep trace by described first protective material, form the first protective seam pattern;
Plated metal on the substrate being formed with described first protective seam pattern, and through second time patterning processes, form metal layer pattern;
Deposition of insulative material on the substrate being formed with described metal layer pattern, and through third time patterning processes, form the second protective seam pattern.
On the other hand, a kind of touch-screen is provided, comprises:
Substrate;
Pattern for transparent conductive layer, is through deposit transparent conductive material on the substrate, and process first time patterning processes is formed, and described pattern for transparent conductive layer includes the horizontal scan line of viewing area and vertical sweep trace;
First protective seam pattern, is through use first protective material and on the substrate being formed with described pattern for transparent conductive layer, carries out inkjet printing so that the node described first protective material being deposited on described horizontal scan line and vertical sweep trace to be formed;
Metal layer pattern, is through plated metal on the substrate being formed with described first protective seam pattern and is formed through second time patterning processes; And
Second protective seam pattern, is through deposition of insulative material on the substrate being formed with described metal layer pattern, and process third time patterning processes is formed.
Described pattern for transparent conductive layer comprises at least one breach;
Described first protective seam pattern is island, and the thickness of described first protective seam pattern is greater than the thickness of described pattern for transparent conductive layer; Around breach described in described first protective seam pattern covers and described breach, and the position of exposed described pattern for transparent conductive layer except the surrounding of breach and described breach;
The scope of described metal layer pattern is greater than the scope of described first protective seam pattern, and described metal layer pattern is electrically connected with described pattern for transparent conductive layer in the extraneous position of described first protective seam pattern.
Described pattern for transparent conductive layer comprises at least one breach;
Described first protective seam pattern is island, and the thickness of described first protective seam pattern is greater than the thickness of described pattern for transparent conductive layer; Around breach described in described first protective seam pattern covers and described breach, and the position of exposed described pattern for transparent conductive layer except the surrounding of breach and described breach;
The scope of described metal layer pattern is greater than the scope of described first protective seam pattern, and described metal layer pattern is electrically connected with described pattern for transparent conductive layer in the extraneous position of described first protective seam pattern.
Described pattern for transparent conductive layer also comprises: the pattern for transparent conductive layer of welding disking area;
Described metal layer pattern comprises: the bridging line of viewing area and the circuit line of welding disking area;
The bridging line of viewing area described in described second protective seam pattern covers, and the circuit line of exposed described welding disking area.
Described pattern for transparent conductive layer is indium tin oxide layer;
Described first protective seam pattern and described second protective seam pattern are made up of allyl resin and epoxy resin, or described first protective seam pattern and described second protective seam pattern are made up of silicon nitride.
The shape of described pattern for transparent conductive layer is rhombus.
Embodiments of the invention have following beneficial effect:
In such scheme; by the mode of inkjet printing (Ink Inject); at the crossover location of transversal I TO and vertical ITO; deposit the first protective seam pattern; compared to the prior art; one Mask or 3 Mask can be reduced, thus can the patterning processes such as corresponding minimizing exposure, development, etching, stripping, reach the object of Simplified flowsheet.
Accompanying drawing explanation
Fig. 1 is the schematic flow sheet of an embodiment of the method for making of touch-screen of the present invention;
Fig. 2 A is the vertical view of the viewing area of the touch-screen of step 111 correspondence in the method for making of the touch-screen shown in Fig. 1;
Fig. 2 B is the sectional view of the viewing area of the touch-screen of step 111 correspondence in the method for making of the touch-screen shown in Fig. 1;
Fig. 3 A is the vertical view of the viewing area of the touch-screen of step 112 correspondence in the method for making of the touch-screen shown in Fig. 1;
Fig. 3 B is the sectional view of the viewing area of the touch-screen of step 112 correspondence in the method for making of the touch-screen shown in Fig. 1;
Fig. 4 A is the vertical view of the viewing area of the touch-screen of step 113 correspondence in the method for making of the touch-screen shown in Fig. 1;
Fig. 4 B is the sectional view of the viewing area of the touch-screen of step 113 correspondence in the method for making of the touch-screen shown in Fig. 1;
Fig. 5 A is the vertical view of the viewing area of the touch-screen of step 114 correspondence in the method for making of the touch-screen shown in Fig. 1;
Fig. 5 B is the sectional view of the viewing area of the touch-screen of step 114 correspondence in the method for making of the touch-screen shown in Fig. 1;
Fig. 6 is the schematic flow sheet of another embodiment of the method for making of touch-screen of the present invention.
Fig. 7 A is the vertical view of the viewing area of the touch-screen of step 211 correspondence in the method for making of the touch-screen shown in Fig. 6;
Fig. 7 B is the sectional view of the viewing area of the touch-screen of step 211 correspondence in the method for making of the touch-screen shown in Fig. 6;
Fig. 8 A is the vertical view of the viewing area of the touch-screen of step 212 correspondence in the method for making of the touch-screen shown in Fig. 6;
Fig. 8 B is the sectional view of the viewing area of the touch-screen of step 212 correspondence in the method for making of the touch-screen shown in Fig. 6;
Fig. 9 A is the vertical view of the viewing area of the touch-screen of step 213 correspondence in the method for making of the touch-screen shown in Fig. 6;
Fig. 9 B is the sectional view of the viewing area of the touch-screen of step 213 correspondence in the method for making of the touch-screen shown in Fig. 6;
Figure 10 A is the vertical view of the viewing area of the touch-screen of step 214 correspondence in the method for making of the touch-screen shown in Fig. 6;
Figure 10 B is the sectional view of the viewing area of the touch-screen of step 214 correspondence in the method for making of the touch-screen shown in Fig. 6.
Embodiment
For embodiments of the invention will be solved technical matters, technical scheme and advantage clearly, be described in detail below in conjunction with the accompanying drawings and the specific embodiments.
The method for making of touch-screen Touch Panel of the present invention, Fig. 5 A is the vertical view of the viewing area of the touch-screen that this programme finally generates, and Fig. 5 B is the sectional view of the touch-screen that this programme finally generates, and only needs 3 Mask.As shown in Figure 1, be the schematic flow sheet of an embodiment of the method for making of touch-screen of the present invention, comprise:
Step 111, on the substrate 11 plated metal, and through first time light shield exposure, etching, stripping, form metal layer pattern 12, described metal layer pattern comprises the bridging line of viewing area; Wherein, described metal layer pattern also comprises: the circuit line of welding disking area; This step is specifically as follows: deposit layer of metal on the glass substrate, and through Mask exposure, etching, peels off, and forms the bridging line of peripheral circuit line and viewing area.Fig. 2 A is the vertical view of the viewing area of the touch-screen of step 111 correspondence; Fig. 2 B is the sectional view of the viewing area of the touch-screen of step 111 correspondence.
Step 112, uses the first protective material to carry out inkjet printing on the substrate being formed with described metal layer pattern 12, to be deposited in described bridging line by described first protective material, forms the first protective seam pattern 13; This step is specifically as follows: be deposited on the node of horizontal pattern for transparent conductive layer to be deposited and vertical pattern for transparent conductive layer by OC (Over Coat, protective seam) 1 by the method for inkjet printing (Ink Inject).Fig. 3 A is the vertical view of the viewing area of the touch-screen of step 112 correspondence; Fig. 3 B is the sectional view of the viewing area of the touch-screen of step 112 correspondence.Described first protective seam pattern 13 can be island; And the thickness of described first protective seam pattern is greater than the thickness of described metal layer pattern; The width of described first protective seam pattern is less than the width of described metal layer pattern, the first side making described metal layer pattern relative and the second side exposed; The length of described first protective seam pattern is greater than the length of described metal layer pattern, and the 3rd side making described metal layer pattern relative and the 4th side are capped, and in subsequent process, coated region can the transparent conductive material of deposit transparent conductive layer pattern.
Step 113, deposit transparent conductive material on the substrate being formed with described first protective seam pattern, and through second time patterning processes, form pattern for transparent conductive layer 14; Described pattern for transparent conductive layer can be indium tin oxide layer.This step is specifically as follows: deposition one deck ITO (indium tin oxide layer) or other pattern for transparent conductive layers, and through Mask exposure, etching, stripping, forms the ITO of diamond rhombus or other shapes.Fig. 4 A is the vertical view of the viewing area of the touch-screen of step 113 correspondence; Fig. 4 B is the sectional view of the viewing area of the touch-screen of step 113 correspondence.The scope of described pattern for transparent conductive layer 14 can for being greater than the scope of described first protective seam pattern, makes described pattern for transparent conductive layer and described metal layer pattern in the position electrical connection of relative the first side of described metal layer pattern and the second side.
In above-described embodiment, metal layer pattern comprises relative first end region and the second end regions and the 3rd relative end regions and the 4th end regions, and these regions are all communicated with.The width of described first protective seam pattern is less than the width of described metal layer pattern, the first side region making described metal layer pattern relative and the second side region exposed; The length of described first protective seam pattern is greater than the length of described metal layer pattern; the 3rd side region making described metal layer pattern relative and the 4th side region are capped; in subsequent process, the coated region of the 3rd side region and the 4th side region can the transparent conductive material of deposit transparent conductive layer pattern.Pattern for transparent conductive layer can comprise isolate each other first area, second area, the 3rd region, between first area and jagged between the 3rd region, jagged between second area and the 3rd region.First area and the second area of pattern for transparent conductive layer pass through the first relative side region of metal layer pattern and the electrical connection of the second side region; the subregion in the 3rd region of pattern for transparent conductive layer can be deposited on the 3rd side region and four-range by the position of the first protective seam pattern covers, thus can across the first protective seam pattern.
Step 114, deposition of insulative material on the substrate being formed with described pattern for transparent conductive layer, and through third time patterning processes, form the second protective seam pattern 15.Described pattern for transparent conductive layer comprises: the pattern for transparent conductive layer of welding disking area and the pattern for transparent conductive layer of viewing area; The pattern for transparent conductive layer of viewing area described in described second protective seam pattern covers, and the pattern for transparent conductive layer of exposed described welding disking area (exposed effect of anticipating out not shown in the figures).This step is specifically as follows: the insulation course of deposition OC 2 or other materials; and through Mask exposure, etching, stripping; form layer protective layer; the ITO of protection viewing area; and by exposed for the ITO of Pad welding disking area, facilitate the Bonding (binding) of IC (driving chip).Fig. 5 A is the vertical view of the viewing area of the touch-screen of step 114 correspondence; Fig. 5 B is the sectional view of the viewing area of the touch-screen of step 114 correspondence.
Described first protective seam pattern and described second protective seam pattern can be that organic insulator also can inorganic insulation layer; described first protective seam pattern and described second protective seam pattern can be made up of allyl resin and epoxy resin; or described first protective seam pattern and described second protective seam pattern are made up of silicon nitride.The shape of described pattern for transparent conductive layer can be rhombus.
As shown in Figure 5 A and 5B, be the touch-screen corresponding with said method, comprise:
Substrate 11;
Metal layer pattern 12, be through on the substrate plated metal and through first time patterning processes formed, described metal layer pattern comprises the bridging line of viewing area;
First protective seam pattern 13, is through use first protective material and on the substrate being formed with described metal layer pattern, carries out inkjet printing formed with the technique be deposited in described bridging line by described first protective material;
Pattern for transparent conductive layer 14, is through deposit transparent conductive material on the substrate being formed with described first protective seam pattern and is formed through second time patterning processes; And
Second protective seam pattern 15, is through deposition of insulative material on the substrate being formed with described pattern for transparent conductive layer and process third time patterning processes is formed.
Described first protective seam pattern 13 is island; And the thickness of described first protective seam pattern is greater than the thickness of described metal layer pattern; The width of described first protective seam pattern is less than the width of described metal layer pattern, the first side making described metal layer pattern relative and the second side exposed;
The scope of described pattern for transparent conductive layer 14 is greater than the scope of described first protective seam pattern, makes described pattern for transparent conductive layer and described metal layer pattern in the position electrical connection of relative the first side of described metal layer pattern and the second side.
Described metal layer pattern 12 also comprises: the circuit line of welding disking area;
Described pattern for transparent conductive layer 14 comprises: the pattern for transparent conductive layer of welding disking area and the pattern for transparent conductive layer of viewing area; Described pattern for transparent conductive layer can be indium tin oxide layer; The shape of described pattern for transparent conductive layer 14 can be rhombus, comprises mutually isolated first area, second area, the 3rd region, and jagged between first area and the 3rd region, jagged between second area and the 3rd region, second area is positioned at centre.
Described second protective seam pattern 15 covers the pattern for transparent conductive layer of described viewing area, and the pattern for transparent conductive layer of exposed described welding disking area.
Wherein, described first protective seam pattern and described second protective seam pattern can be made up of allyl resin and epoxy resin, or described first protective seam pattern and described second protective seam pattern can be made up of silicon nitride.
Below describe the method for making of another kind of touch-screen, Figure 10 A is the vertical view of the touch-screen that this programme finally generates, and Figure 10 B is the sectional view of the touch-screen that this programme finally generates.Compared with above-described embodiment, step 111 and step 113 are exchanged by the present embodiment, only need 3 Mask.As shown in Figure 6, be the schematic flow sheet of another embodiment of the method for making of touch-screen of the present invention, comprise:
Step 211, on the base plate (21 deposit transparent conductive material, and through first time patterning processes, form pattern for transparent conductive layer 24, described pattern for transparent conductive layer includes the horizontal scan line of viewing area and vertical sweep trace; Described pattern for transparent conductive layer also comprises: the pattern for transparent conductive layer of welding disking area; This step is specifically as follows: on Glass, deposit one deck ITO or other pattern for transparent conductive layers, and through Mask exposure, etching, stripping, forms the ITO of diamond rhombus or other shapes.Fig. 7 A is the vertical view of the viewing area of the touch-screen of step 211 correspondence; Fig. 7 B is the sectional view of the viewing area of the touch-screen of step 211 correspondence.As shown in the figure, described pattern for transparent conductive layer 24 can comprise at least one breach.
Step 212, uses the first protective material to carry out inkjet printing on the substrate being formed with described pattern for transparent conductive layer, to be deposited on the node of described horizontal scan line and vertical sweep trace by described first protective material, forms the first protective seam pattern 23; This step is specifically as follows: by the method for inkjet printing Ink Inject, is deposited on by OC 1 on the node of transversal I TO and vertical ITO.Fig. 8 A is the vertical view of the viewing area of the touch-screen of step 212 correspondence; Fig. 8 B is the sectional view of the viewing area of the touch-screen of step 212 correspondence.As shown in the figure, described first protective seam pattern 23 is island, and the thickness of described first protective seam pattern is greater than the thickness of described pattern for transparent conductive layer; Around breach described in described first protective seam pattern covers and described breach, and the position of exposed described pattern for transparent conductive layer except the surrounding of breach and described breach.
Step 213, plated metal on the substrate being formed with described first protective seam pattern, and through second time patterning processes, form metal layer pattern 22; This step is specifically as follows: deposition one deck Metal, and through Mask exposure, etching, stripping, forms the bridging line of peripheral circuit line and viewing area.Fig. 9 A is the vertical view of the viewing area of the touch-screen of step 213 correspondence; Fig. 9 B is the sectional view of the viewing area of the touch-screen of step 213 correspondence.As shown in the figure, the scope of described metal layer pattern 22 is greater than the scope of described first protective seam pattern, and described metal layer pattern is electrically connected with described pattern for transparent conductive layer in the extraneous position of described first protective seam pattern.
Step 214, deposition of insulative material on the substrate being formed with described metal layer pattern, and through third time patterning processes, form the second protective seam pattern 25.Described metal layer pattern comprises: the bridging line of viewing area and the circuit line of welding disking area; The bridging line of viewing area described in described second protective seam pattern covers, and the circuit line of exposed described welding disking area (exposed effect of anticipating out not shown in the figures).This step is specifically as follows: the insulation course of deposition OC 2 or other materials; and through Mask exposure, etching, stripping, form layer protective layer, the ITO of protection viewing area; and by exposed for the Metal in pad Pad region, facilitate the Bonding of IC driving chip to bind.Figure 10 A is the vertical view of the viewing area of the touch-screen of step 214 correspondence; Figure 10 B is the sectional view of the viewing area of the touch-screen of step 214 correspondence.
In above-described embodiment, pattern for transparent conductive layer 24 can comprise isolate each other first area, second area and the 3rd region, wherein, the 3rd has breach between region and second area, and the 3rd has breach between region and first area.Around breach described in described first protective seam pattern covers and described breach, and the position of exposed described pattern for transparent conductive layer except the surrounding of breach and described breach.That is, the first protective seam pattern exposes the portion of described first area and the portion in the 3rd region.Metal layer pattern 22 comprises relative first end region and the second end regions and the 3rd relative end regions and the 4th end regions, and these regions are all communicated with.The scope of described metal layer pattern 22 is greater than the scope of described first protective seam pattern, and described metal layer pattern is electrically connected with described pattern for transparent conductive layer in the extraneous position of described first protective seam pattern.That is, metal layer pattern covers the portion in first area portion and the 3rd region, and described first area and the 3rd region are electrically connected by metal layer pattern.
Described pattern for transparent conductive layer can be indium tin oxide layer; Described first protective seam pattern and described second protective seam pattern are made up of allyl resin and epoxy resin, or described first protective seam pattern and described second protective seam pattern are made up of silicon nitride.The shape of described pattern for transparent conductive layer can be rhombus.
As illustrated in figs. 10 a and 10b, be the touch-screen corresponding with the second embodiment, comprise:
Substrate 21;
Pattern for transparent conductive layer 24, is through deposit transparent conductive material on the substrate, and process first time patterning processes is formed, and described pattern for transparent conductive layer includes the horizontal scan line of viewing area and vertical sweep trace;
First protective seam pattern 23, is through use first protective material and on the substrate being formed with described pattern for transparent conductive layer, carries out inkjet printing so that the node described first protective material being deposited on described horizontal scan line and vertical sweep trace to be formed;
Metal layer pattern 22, is through plated metal on the substrate being formed with described first protective seam pattern and is formed through second time patterning processes; And
Second protective seam pattern 25, is through deposition of insulative material on the substrate being formed with described metal layer pattern, and process third time patterning processes is formed.
Described pattern for transparent conductive layer 24 can comprise at least one breach; Described first protective seam pattern 23 can be island, and the thickness of described first protective seam pattern is greater than the thickness of described pattern for transparent conductive layer; Around breach described in described first protective seam pattern covers and described breach, and the position of exposed described pattern for transparent conductive layer except the surrounding of breach and described breach;
22 scopes of described metal layer pattern can be greater than the scope of described first protective seam pattern 23, and described metal layer pattern is electrically connected with described pattern for transparent conductive layer in the extraneous position of described first protective seam pattern.
Described pattern for transparent conductive layer 24 also comprises: the pattern for transparent conductive layer of welding disking area; Described metal layer pattern comprises: the bridging line of viewing area and the circuit line of welding disking area; The bridging line of viewing area described in described second protective seam pattern covers, and the circuit line of exposed described welding disking area.
Wherein, described pattern for transparent conductive layer 24 can be indium tin oxide layer; Described first protective seam pattern 23 and described second protective seam pattern 25 can be made up of allyl resin and epoxy resin, or described first protective seam pattern and described second protective seam pattern can be made up of silicon nitride.
The shape of described pattern for transparent conductive layer 24 is rhombus, comprises mutually isolated first area, second area, the 3rd region, and jagged between first area and the 3rd region, jagged between second area and the 3rd region, second area is positioned at centre.
The present invention is by the mode of inkjet printing, at the crossover location (Nodes) of transversal I TO and vertical ITO, deposition one layer insulating, replace the method adopting the mode depositing insulating layer of Mask in prior art, can reduce by one Mask to 3Mask, thus corresponding minimizing can expose, develop, the patterning processes such as etching, stripping, reach the object reducing production cost and simplify production technology.
In the present invention, each layer (protective seam, pattern for transparent conductive layer) is not limited to the material described in the application, and pattern for transparent conductive layer is not limited to the rhombus Diamond mentioned in the application.
The above is the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the prerequisite not departing from principle of the present invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (7)
1. a method for making for touch-screen, is characterized in that, comprising:
Deposit transparent conductive material on substrate, and through first time patterning processes, form pattern for transparent conductive layer, described pattern for transparent conductive layer includes the horizontal scan line of viewing area and vertical sweep trace;
Use the first protective material to carry out inkjet printing on the substrate being formed with described pattern for transparent conductive layer, to be deposited on the node of described horizontal scan line and vertical sweep trace by described first protective material, form the first protective seam pattern;
Plated metal on the substrate being formed with described first protective seam pattern, and through second time patterning processes, form metal layer pattern;
Deposition of insulative material on the substrate being formed with described metal layer pattern, and through third time patterning processes, form the second protective seam pattern;
Described metal layer pattern comprises the bridging line of viewing area.
2. the method for making of touch-screen according to claim 1, is characterized in that,
Described pattern for transparent conductive layer comprises at least one breach;
Described first protective seam pattern is island, and the thickness of described first protective seam pattern is greater than the thickness of described pattern for transparent conductive layer; Around breach described in described first protective seam pattern covers and described breach, and the position of exposed described pattern for transparent conductive layer except the surrounding of breach and described breach;
The scope of described metal layer pattern is greater than the scope of described first protective seam pattern, and described metal layer pattern is electrically connected with described pattern for transparent conductive layer in the extraneous position of described first protective seam pattern.
3. the method for making of touch-screen according to claim 1, is characterized in that,
Described pattern for transparent conductive layer also comprises: the pattern for transparent conductive layer of welding disking area;
Described metal layer pattern also comprises: the circuit line of welding disking area;
The bridging line of viewing area described in described second protective seam pattern covers, and the circuit line of exposed described welding disking area.
4. the method for making of touch-screen according to claim 1, is characterized in that,
Described pattern for transparent conductive layer is indium tin oxide layer;
Described first protective seam pattern and described second protective seam pattern are made up of allyl resin and epoxy resin, or described first protective seam pattern and described second protective seam pattern are made up of silicon nitride.
5. the method for making of touch-screen according to claim 1, is characterized in that, the shape of described pattern for transparent conductive layer is rhombus.
6. a touch-screen, is characterized in that, comprising:
Substrate;
Pattern for transparent conductive layer, is through deposit transparent conductive material on the substrate, and process first time patterning processes is formed, and described pattern for transparent conductive layer includes the horizontal scan line of viewing area and vertical sweep trace;
First protective seam pattern, is through use first protective material and on the substrate being formed with described pattern for transparent conductive layer, carries out inkjet printing so that the node described first protective material being deposited on described horizontal scan line and vertical sweep trace to be formed;
Metal layer pattern, comprises the bridging line of viewing area, is through plated metal on the substrate being formed with described first protective seam pattern and is formed through second time patterning processes; And
Second protective seam pattern, is through deposition of insulative material on the substrate being formed with described metal layer pattern, and process third time patterning processes is formed.
7. touch-screen according to claim 6, is characterized in that,
Described pattern for transparent conductive layer comprises at least one breach;
Described first protective seam pattern is island, and the thickness of described first protective seam pattern is greater than the thickness of described pattern for transparent conductive layer; Around breach described in described first protective seam pattern covers and described breach, and the position of exposed described pattern for transparent conductive layer except the surrounding of breach and described breach;
The scope of described metal layer pattern is greater than the scope of described first protective seam pattern, and described metal layer pattern is electrically connected with described pattern for transparent conductive layer in the extraneous position of described first protective seam pattern.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210086965.8A CN102722277B (en) | 2012-03-28 | 2012-03-28 | The method for making of touch-screen and touch-screen |
| PCT/CN2012/084907 WO2013143304A1 (en) | 2012-03-28 | 2012-11-20 | Manufacturing method for touch screen and touch screen |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210086965.8A CN102722277B (en) | 2012-03-28 | 2012-03-28 | The method for making of touch-screen and touch-screen |
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| Publication Number | Publication Date |
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| CN102722277A CN102722277A (en) | 2012-10-10 |
| CN102722277B true CN102722277B (en) | 2015-08-05 |
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| CN201210086965.8A Active CN102722277B (en) | 2012-03-28 | 2012-03-28 | The method for making of touch-screen and touch-screen |
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| Country | Link |
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| CN (1) | CN102722277B (en) |
| WO (1) | WO2013143304A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102722277B (en) * | 2012-03-28 | 2015-08-05 | 京东方科技集团股份有限公司 | The method for making of touch-screen and touch-screen |
| CN104423667B (en) * | 2013-08-30 | 2018-01-12 | Lg伊诺特有限公司 | Touch pad and display |
| CN103487971B (en) * | 2013-09-30 | 2016-05-04 | 京东方科技集团股份有限公司 | The preparation method of color membrane substrates, touch control display apparatus and color membrane substrates |
| CN106970730A (en) * | 2016-01-13 | 2017-07-21 | 中华映管股份有限公司 | Contact panel and its manufacture method |
| CN108415602A (en) * | 2018-03-12 | 2018-08-17 | 武汉华星光电半导体显示技术有限公司 | A kind of preparation method of touch-control structure, OLED touch control display apparatus |
| CN114995683A (en) * | 2022-08-04 | 2022-09-02 | 湖南兴威新材料有限公司 | Single-sided capacitive touch screen and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859213A (en) * | 2009-04-13 | 2010-10-13 | 群康科技(深圳)有限公司 | Making method of capacitor-type touch panel |
| CN201984462U (en) * | 2011-04-22 | 2011-09-21 | 上海晨兴希姆通电子科技有限公司 | Capacitive touch screen |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102722277B (en) * | 2012-03-28 | 2015-08-05 | 京东方科技集团股份有限公司 | The method for making of touch-screen and touch-screen |
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- 2012-03-28 CN CN201210086965.8A patent/CN102722277B/en active Active
- 2012-11-20 WO PCT/CN2012/084907 patent/WO2013143304A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101859213A (en) * | 2009-04-13 | 2010-10-13 | 群康科技(深圳)有限公司 | Making method of capacitor-type touch panel |
| CN201984462U (en) * | 2011-04-22 | 2011-09-21 | 上海晨兴希姆通电子科技有限公司 | Capacitive touch screen |
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| WO2013143304A1 (en) | 2013-10-03 |
| CN102722277A (en) | 2012-10-10 |
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