CN104851927A - Right-side electrode structure of MWT crystalline silicon solar cell - Google Patents
Right-side electrode structure of MWT crystalline silicon solar cell Download PDFInfo
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- CN104851927A CN104851927A CN201510275498.7A CN201510275498A CN104851927A CN 104851927 A CN104851927 A CN 104851927A CN 201510275498 A CN201510275498 A CN 201510275498A CN 104851927 A CN104851927 A CN 104851927A
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- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 3
- 230000003252 repetitive effect Effects 0.000 claims abstract description 30
- 230000008859 change Effects 0.000 claims description 8
- 230000007423 decrease Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000007650 screen-printing Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 210000004027 cell Anatomy 0.000 description 35
- 239000002002 slurry Substances 0.000 description 6
- 230000009466 transformation Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000010307 cell transformation Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011440 grout Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention provides a right-side electrode structure of a MWT crystalline silicon solar cell. The structure comprises at least two repetitive units. Each repetitive unit comprises a through-hole electrode on the center of the repetitive unit; 12 main grid lines which are uniformly distributed in a radial pattern with the through-hole electrode as the center; and a plurality of pairs of auxiliary grid lines distributed on two sides of each main grid line. Each pair of auxiliary grid lines are intersected with the corresponding main grid line on the same point, so as to form an arrow structure. The included angle between each auxiliary grid line and the corresponding main grid line is equal to half of the included angle between adjacent two main grid lines. The distances between any two parallel and adjacent auxiliary grid lines are equal. Each main grid line is ended on the intersection point of the pair of auxiliary grid lines on the outmost side of the main grid line. The right-side electrode structure of a MWT crystalline silicon solar cell can improve collection efficiency of electrodes on current, improves conversion efficiency of solar cells, and reduces printing cost.
Description
Technical field
The present invention relates to application of solar, particularly relate to a kind of electrode structure at right side of MWT solar cell.
Background technology
Substituting as traditional fossil energy, clean, safe, general and inexhaustible solar energy has huge development potentiality.Solar cell is that to tie photovoltaic effect based on pn be the semiconductor device of electric energy by light energy conversion, and its front and back is all printed with metal electrode.During generating, under the front of solar cell is placed in illumination, be irradiated to the photon captured generation electronics of semiconductor, under the effect of offset pressure outside, electronics is collected by front electrode, and is transported to terminating circuit, realizes solar power generation.But in actual applications, electronics all has resistance loss in collection and course of conveying on the one hand; The distribution shield portions illumination of front electrode on the other hand, thus cause current loss.
Conventional solar cell sheet adopts front electrode to contact when component package, generally manual by convergent belt (zinc-plated copper strips) from being positioned at the emitter region electrode welding of one piece of battery front side to the base electrode being positioned at another block cell backside.For ensureing the space of welding, the main gate line of its electrode is general relatively thicker, thus causes main grid shading rate larger.In addition, easily cause battery to produce hidden splitting and fragment in the welding operation of solar battery front side, the residue of solder also can be splashed to shield portions illumination on cell piece, reduces the transformation efficiency of solar battery sheet.For eliminating the harmful effect of front welding and improving the automation of battery connected mode, researcher proposes now widely used back contact structure solar cell.Back contact solar cell refers to that the emitter region electrode of battery and base electrode are all positioned at a kind of silicon solar cell of cell backside, be characterized in eliminating solar battery front side to weld the main gate line of use, only retain secondary grid line collected current and be transported to cell backside by technological means, the welding of positive and negative electrode is carried out all overleaf, reduce the shading loss in front, improve conversion ratio.
Metal piercing winding (Metallization Wrap Through, MWT) solar cell is the one in back contact structure battery, the contact electrode of front side emitter pole is directed to silicon chip back side through silicon chip matrix by laser beam perforation and the empty printing technology of filling by it, compared to the shading rate of conventional solar cell front electrode 7%-8%, MWT solar cell directly reduces shading-area and the silver slurry consumption of main grid, improves the electricity conversion of solar energy while reducing production cost.
In order to collect the electric current that solar cell surface is overflowed as much as possible, the front electrode of sensitive surface requires thin and close to be as far as possible distributed in battery surface, but meticulous grid line causes resistance to increase, during transport current, loss is large, overstocked grid line can consume a large amount of slurries and shading is large, and battery cost increases and transformation efficiency reduces on the contrary.Therefore, a superior electrode pattern is current loss, the optimum Match of shading loss and slurry consumption.That is, under acceptable cost of sizing agent, regulate current loss and shading loss by the thickness density structure of grid line, finally realize the lifting of cell conversion efficiency.Concerning battery pack array, optimization small on electrode also can take care of the pence and bring considerable benefit.
Summary of the invention
The present invention is intended to solve one of technical problem in correlation technique at least to a certain extent.For this reason, the object of the invention is to the electrode structure at right side of the MWT solar cell proposing a kind of optimization, to improve the collection efficiency of electrode pair electric current, improve the transformation efficiency of solar cell, and reduce printing cost.
According to the electrode structure at right side of the MWT solar cell of the embodiment of the present invention, comprise at least 2 repetitives, each repetitive comprises: the through hole electrode being positioned at repetitive center; Article 12, main gate line, 12 main gate line are radially uniformly distributed centered by through hole electrode; And being distributed in the multipair secondary grid line of every bar main gate line both sides, often pair of secondary grid line and corresponding main gate line meet at same point to form an ARROW structure.Wherein, the secondary grid line of each bar equals the half of the angle of two adjacent described main gate line with the angle of corresponding main gate line, spacing between any two parallel and adjacent secondary grid lines is all equal, and every bar main gate line ends at the point of intersection being positioned at the outermost a pair secondary grid line of this main gate line.
According to the electrode structure at right side of the MWT solar cell of the embodiment of the present invention, have the following advantages:
(1) by arranging 12 grid line structures on cell piece surface, finer and closely woven relative to 8 traditional grid line structures, better Optimized Matching current loss and shading loss, reducing the transformation efficiency improving solar cell while silver slurry consumes;
(2) this structure can be guaranteed in screen printing process, the angle of the main gate line that the secondary grid line of every bar is corresponding with it and the angle of throwing the net of silk screen printing inconsistent, thus avoid formation can cause line resistance increase " wavy " grid line;
(3) radial main gate line ends at the design of the point of intersection of its outermost a pair secondary grid line, can reduce the shading rate of grid line, thus improves the transformation efficiency of solar cell;
(4) electrode structure at right side of the MWT solar cell that the consumption of silver slurry is relatively traditional is little, saves printing cost.
In addition, the electrode structure at right side of MWT solar cell according to the above embodiment of the present invention can also have following additional technical characteristic:
In embodiments of the present invention, when each repetitive is of a size of 38.5mm × 38.5mm, every bar main gate line both sides be distributed with 3 to or 4 to secondary grid line.Because secondary grid line dredges the collection being unfavorable for electric current excessively, secondary grid line crosses secret meeting shield portions sunlight, is unfavorable for the generation of electric current, therefore in embodiments of the present invention, every bar main gate line configuration 3 to or the secondary grid line of 4 pairs of ARROW structure, thus realize the Optimized Matching of current loss and shading loss.The quantity of secondary grid line also restricts by the width of secondary grid line, and the width of secondary grid line is thinner, and the quantity of secondary grid line can correspondingly increase.
In embodiments of the present invention, the width of every bar main gate line successively decreases gradually from the outside dispersal direction of through hole electrode, rationally to reduce shading rate and electric current transport loss.Preferably, the width of every bar main gate line is from the outside dispersal direction linear decrease of through hole electrode.
In embodiments of the present invention, the width of the main gate line of vertical direction and horizontal direction is less than the width of the main gate line of incline direction on the whole, to reduce the loss of electric current.So-called " being less than on the whole " refers to, the Breadth Maximum (width near through hole electrode tip) of the main gate line of vertical direction and horizontal direction is less than the Breadth Maximum of the main gate line of incline direction, and the minimum widith of the main gate line of vertical direction and horizontal direction (width away from through hole electrode tip) is less than the minimum widith of the main gate line of incline direction.
In embodiments of the present invention, when each repetitive is of a size of 38.5mm × 38.5mm, the change width scope of the main gate line of vertical direction and horizontal direction is 150 μm-60 μm, and the change width scope of the main gate line of incline direction is 200 μm-80 μm.
In embodiments of the present invention, the even width of the secondary grid line of every bar.
In embodiments of the present invention, the width of the secondary grid line of every bar is less than the minimum widith of main gate line.
In embodiments of the present invention, the width of the secondary grid line of every bar is the limit live width of screen printing technique.
Accompanying drawing explanation
Fig. 1 illustrates according to a repetitive in the electrode structure at right side of the MWT solar cell of the embodiment of the present invention.
Fig. 2 illustrates the electrode structure at right side of the MWT solar cell according to the embodiment of the present invention.
Fig. 3 illustrates the electric current collection situation according to the main grid region of incline direction in a repetitive in the electrode structure at right side of the MWT solar cell of the embodiment of the present invention and the main grid region of horizontal direction.
Embodiment
Be described below in detail embodiments of the invention, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has element that is identical or similar functions from start to finish.Be exemplary below by the embodiment be described with reference to the drawings, be intended to for explaining the present invention, and can not limitation of the present invention be interpreted as.
The embodiment of the present invention provides a kind of electrode structure at right side of MWT solar cell, and this electrode structure at right side comprises at least 2 repetitives.Figure 1 shows that the structure of repetitive.As shown in Figure 1, repetitive comprises: be positioned at the through hole electrode at repetitive center, 12 main gate line and be distributed in the multipair secondary grid line of every bar main gate line both sides.
Wherein, through hole electrode is directed to the back side for front electrode being run through matrix by silver slurry grout printing technology.
Wherein, 12 main gate line are radially uniformly distributed centered by through hole electrode.So-called " being uniformly distributed " refers to that the angle of adjacent main grid line is identical, is namely 30 ° in theory.In actual production, consider fabrication error, the angle of adjacent main grid line can be 30 ° ± 0.5 °.Article 12, main gate line comprises the main gate line of the main gate line of 2 horizontal directions, the main gate line of 2 vertical directions and 8 incline directions.As shown in Figure 1,1.1,1.3,1.2 main gate line representing vertical direction, horizontal direction and incline direction in repetitive respectively.By arranging 12 grid lines on cell piece surface, finer and closely woven relative to 8 traditional grid line structures, shorten the travel of electric current on substrate (such as silicon chip) surface of high square resistance, clump and reach and reduce electric current transport loss, improve the object of current collection efficiency.
Wherein, secondary grid line is arranged in pairs in the both sides of main gate line, and often pair of secondary grid line and corresponding main gate line meet at same point to form an ARROW structure.As shown in Figure 1,1.4,1.5,1.6,1.7 represent the secondary grid line in repetitive respectively.The secondary grid line of each bar is all identical with the angle of its corresponding main gate line, equals the half of the angle of two adjacent main gate line, and namely the angle of the main gate line that the secondary grid line of each bar is corresponding with it is 15 ° in theory.That is, the multiple ARROW structure corresponded to bar main gate line are parallel to each other, and many secondary grid lines between adjacent two main gate line are parallel to each other.Spacing between any two parallel and adjacent secondary grid lines is all equal.For example, as shown in Figure 1, the secondary grid line 1.4 and 1.5 that two of same main gate line 1.2 correspondence are adjacent is parallel to each other, the each self-corresponding secondary grid line 1.5 and 1.6 of adjacent two main gate line 1.2 and 1.3 is parallel to each other, and spacing d1 between secondary grid line 1.4 and 1.5 is equal with the spacing d2 between secondary grid line 1.5 and 1.6.That is, the angular bisector of the angle that secondary grid line 1.5 and 1.6 is formed about main gate line 1.2 and 1.3 is symmetrical, and the angular bisector of the angle that secondary grid line 1.4 and 1.7 is formed about main gate line 1.2 and 1.3 is symmetrical.According to electrode pattern of the invention process, the angle of the main gate line that the secondary grid line of every bar is corresponding with it be in theory 15 ° (in actual production, consider fabrication error, the angle of the main gate line that the secondary grid line of every bar is corresponding with it can be 15 ° ± 0.5 °), the angle of throwing the net of this and silk screen printing (referring to the angle on the warp of silk screen, parallel and screen frame limit) 22.5 ° is inconsistent, thus avoids causing " wavy " grid line.And " wavy " grid line can cause line resistance to increase, electric current transport loss increases.
In addition, every bar main gate line ends at the point of intersection being positioned at the outermost a pair secondary grid line of this main gate line, and does not continue the border extending to repetitive.The effect of such design is, at the boundary of repetitive, the distribution of grid line is enough intensive, namely the collection loss of electric current is no longer the principal element affecting solar cell transformation efficiency, the shading rate reducing grid line is on the contrary conducive to solar battery sheet and produces more photogenerated current, thus improves the transformation efficiency of solar cell.
There is the repetitive of said structure on the matrix of MWT solar cell, general formation 3*3 or 4*4 array, the i.e. array of 9 or 16 repetitive formations.Figure 2 shows that the electrode structure at right side of the MWT solar cell according to the embodiment of the present invention.The size of full wafer MWT solar cell is as shown in Figure 2 156mm × 156mm, battery front side electrode and back electrode contact short circuit during for preventing printing, front electrode be dimensioned slightly smaller than full wafer battery size, be 154mm × 154mm.Therefore for 4*4 array in Fig. 2, the size of each repetitive is 38.5mm × 38.5mm.
Because secondary grid line dredges the collection being unfavorable for electric current excessively, secondary grid line crosses secret meeting shield portions sunlight, be unfavorable for the generation of electric current, therefore in embodiments of the present invention, when each repetitive is of a size of 38.5mm × 38.5mm, every bar main gate line configuration 3 to or the secondary grid line of 4 pairs of ARROW structure, thus realize the Optimized Matching of current loss and shading loss.The quantity of secondary grid line also restricts by the width of secondary grid line, and the width of secondary grid line is thinner, and the quantity of secondary grid line can correspondingly increase.Such as, if the width of secondary grid line gets 50 μm, then every bar main gate line preferably configures the secondary grid line of 3 pairs of ARROW structure, as shown in Figure 1; When the width of secondary grid line can obtain thinner, every bar main gate line then preferably can configure the secondary grid line of more multipair (such as 4 to) ARROW structure.Be of a size of 38.5mm × 38.5mm for each repetitive, the electrode structure of every bar main gate line configuration 3 for secondary grid line, the spacing in Fig. 1 between any two parallel and adjacent secondary grid lines is 1.75mm, i.e. d1=d2=1.75mm.
For this radial main gate line structure, the closer to central through-hole electrode part, its current density is larger, therefore in embodiments of the present invention, the width of every bar main gate line successively decreases gradually from the outside dispersal direction of through hole electrode, rationally to reduce shading rate and electric current transport loss.Preferably, as shown in Figure 1, the width of every bar main gate line is from the outside dispersal direction linear decrease of through hole electrode.
Especially, each bar main gate line is because position is different, and its magnitude of current collected is also different, and in order to reduce electric current transport loss as far as possible, in the present embodiment, the change width scope of each bar main gate line is also different.Particularly, as shown in Figure 3, the electric current in region 1 is collected by the main gate line of the incline direction being arranged in this region, and the electric current in region 2 is collected by the main gate line of the horizontal direction being arranged in this region.Area due to region 1 is greater than the area in region 2, therefore the electric current that the main gate line of incline direction in region 1 is collected is more, and in order to reduce the loss of electric current, the width of the main gate line of incline direction is greater than the width of the main gate line of horizontal direction on the whole.That is, in the present embodiment, in order to reduce the loss of electric current, the width of the main gate line of vertical direction and horizontal direction is less than the width of the main gate line of incline direction on the whole.So-called " being less than on the whole " refers to, the Breadth Maximum (width near through hole electrode tip) of the main gate line of vertical direction and horizontal direction is less than the Breadth Maximum of the main gate line of incline direction, and the minimum widith of the main gate line of vertical direction and horizontal direction (width away from through hole electrode tip) is less than the minimum widith of the main gate line of incline direction.In embodiments of the present invention, when each repetitive is of a size of 38.5mm × 38.5mm, the change width scope of the main gate line of vertical direction and horizontal direction is 150 μm-60 μm, and the change width scope of the main gate line of incline direction is 200 μm-80 μm.
In embodiments of the present invention, the even width of the secondary grid line of every bar, and the width of the secondary grid line of every bar is less than the minimum widith of main gate line.The width of secondary grid line is more thin better in theory, thus is conducive to improving electric current collection rate and reduces shading rate simultaneously.Preferably, the width of the secondary grid line of every bar is the limit live width of screen printing technique.In one embodiment of the invention, the width of secondary grid line is 50 μm.
Shading rate according to the electrode structure at right side of the MWT solar cell of the embodiment of the present invention can reach 4.54%, and far below the shading rate of common MWT front electrode of solar battery structure 7%, the consumption of great saving silver paste, reduces printing cost.
In describing the invention, it will be appreciated that, term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ", " thickness ", " on ", D score, " front ", " afterwards ", " left side ", " right side ", " vertically ", " level ", " top ", " end " " interior ", " outward ", " clockwise ", " counterclockwise ", " axis ", " radial direction ", orientation or the position relationship of the instruction such as " circumference " are based on orientation shown in the drawings or position relationship, only the present invention for convenience of description and simplified characterization, instead of indicate or imply that the device of indication or element must have specific orientation, with specific azimuth configuration and operation, therefore limitation of the present invention can not be interpreted as.
In the present invention, unless otherwise clearly defined and limited, fisrt feature second feature " on " or D score can be that the first and second features directly contact, or the first and second features are by intermediary indirect contact.And, fisrt feature second feature " on ", " top " and " above " but fisrt feature directly over second feature or oblique upper, or only represent that fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " below " and " below " can be fisrt feature immediately below second feature or tiltedly below, or only represent that fisrt feature level height is less than second feature.
In the description of this specification, specific features, structure, material or feature that the description of reference term " embodiment ", " some embodiments ", " example ", " concrete example " or " some examples " etc. means to describe in conjunction with this embodiment or example are contained at least one embodiment of the present invention or example.In this manual, to the schematic representation of above-mentioned term not must for be identical embodiment or example.And the specific features of description, structure, material or feature can combine in one or more embodiment in office or example in an appropriate manner.In addition, when not conflicting, the feature of the different embodiment described in this specification or example and different embodiment or example can carry out combining and combining by those skilled in the art.
Although illustrate and describe embodiments of the invention above, be understandable that, above-described embodiment is exemplary, can not be interpreted as limitation of the present invention, and those of ordinary skill in the art can change above-described embodiment within the scope of the invention, revises, replace and modification.
Claims (10)
1. an electrode structure at right side for MWT solar cell, is characterized in that, comprises at least 2 repetitives, and each described repetitive comprises:
Be positioned at the through hole electrode at described repetitive center;
Article 12, main gate line, described 12 main gate line are radially uniformly distributed centered by described through hole electrode; And
Be distributed in the multipair secondary grid line of main gate line both sides described in every bar, often pair of described secondary grid line and corresponding main gate line meet at same point to form an ARROW structure,
Wherein, the secondary grid line of each bar equals the half of the angle of two adjacent described main gate line with the angle of corresponding main gate line, spacing between any two parallel and adjacent secondary grid lines is all equal, and main gate line described in every bar ends at the point of intersection being positioned at the outermost a pair secondary grid line of this main gate line.
2. the electrode structure at right side of MWT solar cell according to claim 1, wherein, when each described repetitive is of a size of 38.5mm × 38.5mm, main gate line both sides described in every bar are distributed with 3 to secondary grid line.
3. the electrode structure at right side of MWT solar cell according to claim 1, wherein, when each described repetitive is of a size of 38.5mm × 38.5mm, main gate line both sides described in every bar are distributed with 4 to secondary grid line.
4. the electrode structure at right side of the MWT solar cell according to any one of claim 1-3, wherein, the width of main gate line described in every bar successively decreases gradually from the outside dispersal direction of described through hole electrode.
5. the electrode structure at right side of MWT solar cell according to claim 4, wherein, the width of main gate line described in every bar is from the outside dispersal direction linear decrease of described through hole electrode.
6. the electrode structure at right side of MWT solar cell according to claim 4, wherein, the width of the described main gate line of vertical direction and horizontal direction is less than the width of the described main gate line of incline direction on the whole.
7. the electrode structure at right side of MWT solar cell according to claim 6, wherein, when each described repetitive is of a size of 38.5mm × 38.5mm, the change width scope of the described main gate line of vertical direction and horizontal direction is 150 μm-60 μm, and the change width scope of the described main gate line of incline direction is 200 μm-80 μm.
8. the electrode structure at right side of the MWT solar cell according to any one of claim 1-3, wherein, the even width of secondary grid line described in every bar.
9. the electrode structure at right side of MWT solar cell according to claim 8, wherein, described in every bar, the width of secondary grid line is less than the minimum widith of described main gate line.
10. the electrode structure at right side of the MWT solar cell according to any one of claim 1-3, wherein, the width of secondary grid line described in every bar is the limit live width of screen printing technique.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489684A (en) * | 2016-02-03 | 2016-04-13 | 江苏赛拉弗光伏系统有限公司 | Solar photovoltaic assembly |
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Application publication date: 20150819 |