CN104851922A - Heterogeneous photovoltaic welding strip and machining method thereof - Google Patents
Heterogeneous photovoltaic welding strip and machining method thereof Download PDFInfo
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- CN104851922A CN104851922A CN201510297579.7A CN201510297579A CN104851922A CN 104851922 A CN104851922 A CN 104851922A CN 201510297579 A CN201510297579 A CN 201510297579A CN 104851922 A CN104851922 A CN 104851922A
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- base band
- electric conducting
- conducting base
- shaped groove
- photovoltaic welding
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- 238000003466 welding Methods 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title abstract description 9
- 238000003754 machining Methods 0.000 title abstract 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 23
- 239000010949 copper Substances 0.000 claims description 23
- 229910000679 solder Inorganic materials 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 10
- 238000003672 processing method Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 238000005096 rolling process Methods 0.000 claims description 4
- 238000005282 brightening Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 238000005554 pickling Methods 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 238000005491 wire drawing Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000008569 process Effects 0.000 description 6
- 238000005452 bending Methods 0.000 description 4
- 239000012634 fragment Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
- H01L31/02005—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
- H01L31/02008—Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0547—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a heterogeneous photovoltaic welding strip comprising a conductive baseband. The conductive baseband has a lower joint surface and an upper reflective surface. The lower joint surface is a smooth surface. V-shaped grooves are distributed on the upper reflective surface, and a coupling platform is formed between every two adjacent V-shaped grooves. The heterogeneous photovoltaic welding strip is characterized in that the V-shaped grooves extend in parallel along the length direction of the conductive baseband, the depth of the V-shaped grooves is 25-30% of the thickness of the conductive baseband, and the included angle of the V-shaped grooves is 77-95 degrees. The scheme provides a photovoltaic welding strip which has high incident light utilization rate and more outstanding toughness and tensile strength. The invention further discloses a machining method of the heterogeneous photovoltaic welding strip.
Description
Technical field
The present invention relates to a kind of isomery photovoltaic welding belt and processing method thereof, belong to technical field of solar.
Background technology
Photovoltaic welding belt is crucial auxiliary material solar cell being connected bunchiness, solar cell is connected to form a complete electric path by welding, luminous energy is converted into electric energy by solar cell, and the electric current of generation forms transmission circuit by welding, provides path basis for utilizing solar energy.The base material of common welding is copper, is coated with tin layers at welding substrate surface, and whole welding surface is all more smooth, and the light entering assembly, to smooth welding surface, is gone out by mirror-reflection, cannot be utilized.Although there are some special-shaped weldings in the market, the groove that surface is provided with various rule realizes secondary reflection to arrive cell piece surface, is again utilized, thus improves the utilance of incident light.
The application for a patent for invention being 201310330865.X as application number discloses a kind of photovoltaic welding belt, comprises electric conducting base band, it has groove, and groove is the linear pattern strip groove and/or shaped form strip groove that are obliquely installed with the length direction of electric conducting base band; The angle of inclination of the length direction of linear pattern strip groove and electric conducting base band is 15 °-75 °; In shaped form strip groove, on its curve, the angle of inclination of the tangent line of any point and the length direction of electric conducting base band is 15 °-75 °.This invention overall balance in following four, maximizes practical income: the power output 1) increasing battery component by improving total reflection ratio; 2) guarantee to weld fastness by the adjustment base band area of plane; 3) reduced the practical cross section loss of electric conducting base band by adjustment FLUTE ANGLE, minimize the loss in efficiency that confluxes of welding; 4) by the angle of the adjustment degree of depth of groove, strip groove and welding length direction, reduce because welding is different from the cell piece coefficient of expansion and cause cell piece that the hidden probability with fragment that splits occurs.
But because in above-mentioned application, strip groove and electric conducting base band are obliquely installed, easily owing to there is the situation of fracture when welding bending or rolling, this is because groove oblique be arranged so that welding bending strength and tensile strength all degradation cause, if after crack conditions occurs in and assembles with battery, then easily transmission circuit open circuit, cannot realize light energy conversion.And in prior art to the degree of depth of groove and angle broad scope excessive, groove is excessively dark, easily cause welding envelope thickness excessive, increase the battery fragment risk in the weather-proof security risk of assembly and component lamination process, cross shallow, cannot reflection function be given full play to, realize efficient light utilization efficiency.The angle of groove also has impact to the utilance that reverberation reflexes to battery surface generation total reflection again by the glass/air surface of assembly simultaneously.
Summary of the invention
For prior art exist deficiency, the object of the present invention is to provide a kind of photovoltaic welding belt, not only there is good incident light utilance, and toughness and tensile strength all more excellent.
For achieving the above object, the invention provides following technical scheme: a kind of isomery photovoltaic welding belt, comprise electric conducting base band, described electric conducting base band has lower binding face and upper reflecting surface, and lower binding face is burnishing surface, and upper reflecting surface is distributed with V-shaped groove, be formed between adjacent V-shaped groove and be coupled platform, described V-shaped groove extends in parallel along electric conducting base band length direction, and the degree of depth of V-shaped groove is the 25%-30% of electric conducting base band thickness, and the angle of V-shaped groove is between 77 °-95 °.
Preferably, described electric conducting base band surface has equally distributed solder layer, and it is that the material of 61.5%-62%Sn, 20%-38%Pb, 4-5%Ag mixes that described solder layer comprises each constituent mass percentage.
Preferably, the thickness of described solder layer is between 12 μm-25 μm.
Preferably, the material of described electric conducting base band is oxygen-free copper or T2 red copper, copper content >=99.9% of described electric conducting base band, conductance >=98%.
The invention also discloses a kind of processing method of processing above-mentioned isomery photovoltaic welding belt, comprise the following steps:
1., copper bar annealing wire drawing, then make copper strips through calender;
2., copper strips forms the lower binding face of electric conducting base band and upper reflective surface through V-shaped groove roll squeezer (comprising a patterned roll and a smooth roll);
3., copper strips is divided into the electric conducting base band of specified width, which width through cutting machine;
4., electric conducting base band annealing, zinc-plated by tinning machine after pickling, zinc-plated temperature 225 DEG C ~ 228 DEG C, between zinc-plated thickness 12 μm-25 μm, ensures that coating is even, surface-brightening is smooth;
5., cooling dry up rear rolling, make photovoltaic welding belt finished product.
By adopting technique scheme, V-shaped groove can make part surface reverberation again be reflected back battery surface by glass/air surface, makes full use of light source; The binding strength problem that platform solves welding and cell piece is coupled between V-shaped groove.V-shaped groove extends in parallel along electric conducting base band length direction, occurs the situation of fracture, add welding bending strength and tensile strength simultaneously when avoiding welding laterally to bend.Find through test, the degree of depth of V-shaped groove is the 25%-30% of electric conducting base band thickness, and the angle of V-shaped groove, between 77 °-95 °, fully can realize light utilization efficiency, effectively can avoid again the battery fragment risk in component lamination process.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is stereogram of the present invention;
Fig. 2 is sectional view of the present invention;
Fig. 3 is the enlarged drawing at M place in Fig. 2 of the present invention;
Fig. 4 is the curve chart of the V-shaped groove degree of depth of the present invention and light utilization efficiency;
Fig. 5 is the curve chart of V-shaped groove angle of the present invention and light utilization efficiency.
Accompanying drawing illustrates: 1, electric conducting base band; 2, upper reflecting surface; 2a, V-shaped groove; 2b, be coupled platform; 3, lower binding face; 4, solder layer; A, light utilization efficiency; H, the V-shaped groove degree of depth; A, V-shaped groove angle; L, electric conducting base band thickness; The thickness of K, solder layer.
Embodiment
A kind of isomery photovoltaic welding belt, comprise electric conducting base band 1, electric conducting base band 1 has lower binding face 3 and upper reflecting surface 2, lower binding face 3 is burnishing surface, upper reflecting surface 2 is distributed with V-shaped groove 2A, be formed between adjacent V-shaped groove 2A and be coupled platform 2b, V-shaped groove 2A extends in parallel along electric conducting base band 1 length direction, the degree of depth of V-shaped groove 2A is that the 25%-30%(of electric conducting base band thickness L is preferably 25.5%, 26%, 28% these three end points, as shown in Figure 4, when V-shaped groove included angle A is at 80 °, these three end points light utilization efficiency A are in peak value), the angle of V-shaped groove 2A (is preferably 80 ° between 77 °-95 °, 83 °, 90 °, as shown in Figure 5, when the V-shaped groove H that enters a higher level is in 26%, these three end points light utilization efficiency A are in peak value).V-shaped groove 2A can make part surface reverberation again be reflected back battery surface by glass/air surface, makes full use of light source; The binding strength problem that platform 2b solves welding and cell piece is coupled between V-shaped groove 2A.V-shaped groove 2A extends in parallel along electric conducting base band 1 length direction, occurs the situation of fracture, add welding bending strength and tensile strength simultaneously when avoiding welding laterally to bend.Find through test, the degree of depth of V-shaped groove 2A is the 25%-30% of electric conducting base band thickness L, the angle of V-shaped groove 2A is between 77 °-95 °, can fully realize light utilization efficiency A, effectively can avoid again the battery fragment risk in component lamination process, and V-shaped groove 2A can avoid the high fluidity of solder in welding process to cause V-shaped groove 2A structure to be filled the problem destroyed by transition in this degree of depth.
Wherein, electric conducting base band 1 surface has equally distributed solder layer 4, and it is that 61.5%-62%Sn(is preferably 61.8% that solder layer 4 comprises each constituent mass percentage), 20%-38%Pb(is preferably 22%, 25%, 24%), 4-5%Ag(is preferably 4.5%) material mix.Zinc-plated at electric conducting base band 1 skin is to make electric conducting base band 1 have good Weldability and having certain corrosion resistance, in tin material, heat Ag can ensure under the prerequisite that product thickness is constant, improve the thickness of electric conducting base band 1, reduce unit resistance, improve the conductance of welding, the electricity conversion of photovoltaic module can be improved 2 ~ 3%, simultaneously plumbous soft and there is good conductivity, and cost is low, coordinates with Ag and realize economic worth maximization.
Wherein, the thickness K of solder layer is between 12 μm-25 μm.The too thick conductance that easily makes of solder layer 4 reduces, and in welding process, easily cause V-shaped groove 2A to be made to lose reflection action by transition filling, too shallow, cannot realize effective welding.
Wherein, the material of electric conducting base band 1 is oxygen-free copper or T2 red copper, copper content >=99.9% of electric conducting base band 1, conductance >=98%.The oxygen content of oxygen-free copper is little with 0.003%, and content of impurities is not more than 0.05%, and this bi-material conductance is all relatively good, suitably can select according to economic conditions.
The invention also discloses a kind of processing method of processing above-mentioned isomery photovoltaic welding belt, comprise the following steps:
1., copper bar annealing wire drawing, then make copper strips through calender;
2., copper strips forms the lower binding face 3 of electric conducting base band 1 and upper reflective surface through V-shaped groove 2A roll squeezer (comprising a patterned roll and a smooth roll);
3., copper strips is divided into the electric conducting base band 1 of specified width, which width through cutting machine;
4., electric conducting base band 1 anneals, zinc-plated by tinning machine after pickling, zinc-plated temperature 225 DEG C ~ 228 DEG C, between zinc-plated thickness 12 μm-25 μm, ensures that coating is even, surface-brightening is smooth;
5., cooling dry up rear rolling, make photovoltaic welding belt finished product.This processing method production efficiency is high, good product quality.Formed the V-shaped groove 2A Stability Analysis of Structures made by embossing, surface spikes is few, afterwards annealed process, decreases the hidden of welding and splits, reduce the yield strength of welding, adds the reliability that photovoltaic welding belt makes solar photovoltaic assembly.
The above is only the preferred embodiment of the present invention, protection scope of the present invention be not only confined to above-described embodiment, and all technical schemes belonged under thinking of the present invention all belong to protection scope of the present invention.It should be pointed out that for those skilled in the art, some improvements and modifications without departing from the principles of the present invention, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (5)
1. an isomery photovoltaic welding belt, comprise electric conducting base band, described electric conducting base band has lower binding face and upper reflecting surface, lower binding face is burnishing surface, upper reflecting surface is distributed with V-shaped groove, is formed and is coupled platform, it is characterized in that: described V-shaped groove extends in parallel along electric conducting base band length direction between adjacent V-shaped groove, the degree of depth of V-shaped groove is the 25%-30% of electric conducting base band thickness, and the angle of V-shaped groove is between 77 °-95 °.
2. isomery photovoltaic welding belt according to claim 1, is characterized in that: described electric conducting base band surface has equally distributed solder layer, and it is that the material of 61.5%-62%Sn, 20%-38%Pb, 4-5%Ag mixes that described solder layer comprises each constituent mass percentage.
3. isomery photovoltaic welding belt according to claim 2, is characterized in that: the thickness of described solder layer is between 12 μm-25 μm.
4. isomery photovoltaic welding belt according to claim 3, is characterized in that: the material of described electric conducting base band is oxygen-free copper or T2 red copper, copper content >=99.9% of described electric conducting base band, conductance >=98%.
5., as the isomery photovoltaic welding belt processing method of claim 1 ~ 3 as described in any one, it is characterized in that comprising the following steps:
1., copper bar annealing wire drawing, then make copper strips through calender;
2., copper strips forms the lower binding face of electric conducting base band and upper reflective surface through V-shaped groove roll squeezer (comprising a patterned roll and a smooth roll);
3., copper strips is divided into the electric conducting base band of specified width, which width through cutting machine;
4., electric conducting base band annealing, zinc-plated by tinning machine after pickling, zinc-plated temperature 225 DEG C ~ 228 DEG C, between zinc-plated thickness 12 μm-25 μm, ensures that coating is even, surface-brightening is smooth;
5., cooling dry up rear rolling, make photovoltaic welding belt finished product.
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CN201510297579.7A CN104851922A (en) | 2015-06-02 | 2015-06-02 | Heterogeneous photovoltaic welding strip and machining method thereof |
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CN201510297579.7A CN104851922A (en) | 2015-06-02 | 2015-06-02 | Heterogeneous photovoltaic welding strip and machining method thereof |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106449836A (en) * | 2016-12-21 | 2017-02-22 | 常州天合光能有限公司 | Segmented slightly light-concentrating welding belt and preparation thereof |
CN107254647A (en) * | 2017-05-08 | 2017-10-17 | 江苏东昇光伏科技有限公司 | A kind of photovoltaic welding tin plating technique |
CN107634118A (en) * | 2016-07-18 | 2018-01-26 | 江苏太阳科技股份有限公司 | A kind of solar energy welding that can strengthen conversion efficiency |
CN108213105A (en) * | 2016-12-21 | 2018-06-29 | 绍兴锐创金属材料有限公司 | A kind of photovoltaic welding belt convergent belt special purpose copper bandlet flow line production technique |
CN108682711A (en) * | 2018-06-11 | 2018-10-19 | 刘金花 | High-efficiency photovoltaic solder strip and its welding method and the screen printing apparatus for implementing this method |
-
2015
- 2015-06-02 CN CN201510297579.7A patent/CN104851922A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107634118A (en) * | 2016-07-18 | 2018-01-26 | 江苏太阳科技股份有限公司 | A kind of solar energy welding that can strengthen conversion efficiency |
CN106449836A (en) * | 2016-12-21 | 2017-02-22 | 常州天合光能有限公司 | Segmented slightly light-concentrating welding belt and preparation thereof |
CN108213105A (en) * | 2016-12-21 | 2018-06-29 | 绍兴锐创金属材料有限公司 | A kind of photovoltaic welding belt convergent belt special purpose copper bandlet flow line production technique |
CN107254647A (en) * | 2017-05-08 | 2017-10-17 | 江苏东昇光伏科技有限公司 | A kind of photovoltaic welding tin plating technique |
CN108682711A (en) * | 2018-06-11 | 2018-10-19 | 刘金花 | High-efficiency photovoltaic solder strip and its welding method and the screen printing apparatus for implementing this method |
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Application publication date: 20150819 |
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