CN104846348A - Method for making microcircuit through using laser direct writing - Google Patents
Method for making microcircuit through using laser direct writing Download PDFInfo
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- CN104846348A CN104846348A CN201510198249.2A CN201510198249A CN104846348A CN 104846348 A CN104846348 A CN 104846348A CN 201510198249 A CN201510198249 A CN 201510198249A CN 104846348 A CN104846348 A CN 104846348A
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Abstract
The invention provides a method for making a microcircuit through using a laser direct writing. A material used in the invention is an inorganic phase change material GST, GBST or GSST. The method comprises the following steps: 1, selecting a substrate, cleaning, and drying; 2, adopting a physical vapor deposition technology to grow an amorphous GST, GBST or GSST film; and 3, carrying out direct writing processing on a path for electric conduction by using laser direct writing, and converting an etched portion make an amorphous film become a crystalline film in order to realize designed circuit conduction. The characteristic dimension of the microcircuit obtained through the method is 100nm-5[mu]m, and the method has the advantages of simple and controllable process, uniform dimension and morphology and low cost of the above obtained circuit, and modification design flexibility.
Description
Technical field
The invention belongs to microelectronic, it is interconnected and use laser direct-writing to prepare the method for microcircuit to be specifically related to a kind of electron device that can be used for.
Background technology
At microelectronics and semiconductor applications, being carried out connecting by various electronic devices and components is the prerequisite of the overall various sophisticated functions of realizing circuit.In order to reduce the mistake of wiring and assembling, improve the gentle productive labor rate of Automated water, electronic component interconnected directly connection from initial dependence electric wire develops into printed circuit board (PCB).And along with the development of unicircuit, its integrated level and element intensity more and more higher, the particularly appearance of film-type flexible circuit, performance also requiring, circuit interconnects is to high-density, high precision, Small Distance, light weight, the future development such as slim, and this also proposes very high requirement to the standard of circuit interconnects.Adopt thinner aperture and the interconnected object that just can meet raising unicircuit intensity of wire completing circuit.
But current existing printed circuit board (PCB) still cannot prepare the interconnecting lead of submicron-scale.This is because existing technique major part adopts etching method to obtain conducting wire, easily cause its pattern discontinuous being reduced to by conducting wire width to a certain degree, thus cannot complete interconnected.Therefore how to obtain existing little line width and conductivity is good, comparatively can be easy to again circuit and to have made and amendment is the interconnected a great problem of microcircuit always.
Current research finds, some inorganic phase-changing materials are as Ge
2sb
2te
5(hereinafter referred to as GST), Ge
2sb
2xbi
2 (1-x)te
5(0 < x < 1) (hereinafter referred to as GSBT), Ge
2sn
2xsb
2 (1-x)te
5(0 < x < 1) (hereinafter referred to as GSST), Ae
2s
3, As
2se
3, As
2te
3deng, different phases has different physics-chem characteristics, and under non-crystalline state, these materials have short-range atomic level and lower free electron density, makes it have higher resistivity.And under crystalline state, resistivity reduces to original less than 1/10th.Therefore corresponding conducting wire can be obtained by regulation and control phase change region.
Summary of the invention
The object of the invention is to the defect overcoming above-mentioned prior art, thus a kind of method using laser writing technology to prepare microcircuit be provided, prepare simple and convenient, pollution-free, film thickness evenly, smooth surface.
The object of the invention is to be achieved through the following technical solutions: a kind of laser direct-writing that uses prepares microcircuit method, and the method comprises the following steps:
Step 1): choose substrate, it is cleaned and drying treatment;
Step 2): physical gas-phase deposition is adopted to substrate, growth one deck amorphous inorganic phase change material film; The mode of powder metallurgy is wherein first adopted to prepare required target, then target and magnetron sputtering equipment is utilized to carry out thin film deposition under vacuum conditions, can by regulating parameter during deposition, as deposition power, deposition pressure and depositing time obtain thickness evenly, the noncrystalline membrane that thickness is controlled.
Step 3): first use laser directly to write out designed pattern on grown film, and make the film of inscription part be crystalline state by amorphous state by laser radiation.Wherein utilize laser direct writing equipment and select the laser radiation of suitable energy density to sample surfaces, film is after laser radiation, can photothermal deformation be there is, cause the crystalline state being become conduction by nonconducting amorphous state, thus required interconnected line image can be prepared on film.
On the basis of technique scheme, comprise following attached technical scheme further:
Described step 3) comprising: use laser direct-writing directly to write needing the film position of microcircuit, and amorphous inorganic phase change material film is GST or GBST or GSST film.
Described substrate is glass material substrate, monocrystal chip or high molecular polymer substrate, and substrate can be hard substrate, also can be flexible substrate.
Described glass material substrate comprises common lid slide, slide glass or silica glass; Described monocrystal chip comprises single crystalline Si sheet, gallium arsenide substrate, gan substrate.
Described high molecular polymer substrate is the flexible substrate of isolation material, and it comprises PMMA, PC substrate.
Described step 2) in physical gas-phase deposition be magnetically controlled DC sputtering or rf magnetron sputtering or ion sputtering or pulsed laser deposition.The width of the microcircuit structures inscribed is from nanoscale to micro-meter scale, and the thickness of described film is 20nm-500nm, and the energy density scope of described laser radiation is 0.3-3J/cm
2.
Compared with prior art, the present invention has the following advantages:
1) method of physical vapor deposition conventional in suitability for industrialized production is adopted to prepare film.There is the advantages such as preparation is simple and convenient, pollution-free, film thickness even, smooth surface.When film thickness is 100 nanometer, surfaceness about 2 nanometer.
2) do not need in whole preparation technology to carry out the complex steps such as whirl coating, exposure, etching.The interconnected lines of the controlled micro-/ nano yardstick of area, thickness, size can be prepared by simple adjusting process parameter, can be used for circuit inscribe and device interconnected.
3) this inventive method Production Flow Chart cycle is short, and cost is low, and productive rate is high, and technique is simply controlled, is easy to realize suitability for industrialized production.The micro-/ nano circuit of products obtained therefrom can have extremely wide application prospect in the field such as micro-electronic machining, memory device.Due to above-mentioned steps (film preparation, circuit is inscribed) can be implemented completely in a vacuum, thus manufacture significant to the true vacuum large-scale integrated circuit of future generation in fast development.
Accompanying drawing explanation
Referring to accompanying drawing, embodiments of the present invention is further illustrated, wherein:
Fig. 1 is the schema of scheme of the invention;
Fig. 2 is the transmission electron microscope (TEM) of and crystal GSBT film noncrystal according to the embodiment of the present invention 1 and chooses electron diffraction (SAED) image;
Fig. 3 is the laser radiation back reflection rate survey sheet of the GST film according to the embodiment of the present invention 2;
Fig. 4 is the microcircuit observation by light microscope figure of the GSBT film according to the embodiment of the present invention 3;
Fig. 5 is the microcircuit observation by light microscope figure of the GSST film according to the embodiment of the present invention 4;
Fig. 6 is the microcircuit observation by light microscope figure of the GST film according to the embodiment of the present invention 5.
Embodiment
In order to make object of the present invention, technical scheme and advantage clearly understand, below in conjunction with drawings and Examples, structure of the present invention and preparation method are described in further details.
As described in Figure 1, the invention provides a kind of laser direct-writing that uses and prepare microcircuit method, it comprises the steps:
Step 1): choose substrate, it is cleaned and drying treatment;
Step 2): physical gas-phase deposition is adopted to substrate, growth one deck amorphous inorganic phase change material film; The mode of powder metallurgy is wherein first adopted to prepare required target, then target and magnetron sputtering equipment is utilized to carry out thin film deposition under vacuum conditions, can by regulating parameter during deposition, as deposition power, deposition pressure and depositing time obtain thickness evenly, the noncrystalline membrane that thickness is controlled.
Step 3): first use laser directly to write out designed pattern on grown film, and make the film of inscription part be crystalline state by amorphous state by laser radiation.Wherein utilize laser direct writing equipment and select the laser radiation of suitable energy density to sample surfaces, film is after laser radiation, can photothermal deformation be there is, cause the crystalline state being become conduction by nonconducting amorphous state, thus required interconnected line image can be prepared on film.
For further describing in detail, the present invention also provides following specific embodiment:
Embodiment 1:
Step 1): choose cover glass as substrate, adopt conventional semiconductor cleaning process to be cleaned up by this substrate, clean up rear use dry gas and dry up, in vacuum oven with dry at 120 DEG C of-200 DEG C of temperature, be cooled to room temperature after take out;
Step 2): in the cover glass substrate 1 as above processed, adopt r. f. magnetron sputtering Ge
2bi
0.7sb
1.3te
5film, mode of deposition: background pressure 1 × 10
-5pa, sputtering power 50W, Ar flow is 25sccm, deposition pressure 0.1Pa, and base reservoir temperature is room temperature, depositing time 250s, and obtaining GSBT film thickness is 60nm.
Step 3): directly write sample with laser in the subregion of film sample.When the laser by suitable energy density, (present case is 1.26J/cm
2) straight portrayal is when penetrating sample, wherein laser direct-writing and laser radiation are same concept, and irradiated surface can undergo phase transition.Pre-irradiation sample is non-crystalline state, and the portions turn be irradiated with a laser is crystalline state.As shown in the TEM of Fig. 2 and selected area electron diffraction (SAED) figure.In Fig. 2 (a), the part of mark " A " is the GSBT film not being irradiated with a laser part, can find out that surface is very smooth, be made up of a lot of subparticle, the selected area electron diffraction figure (SAED) of its correspondence is as shown in Fig. 2 (b), can know from its halo of water diffusion, this part material is non-crystal structure; In Fig. 2 (a), the part of mark " B " is through the GSBT film after laser radiation, its surface ratio " A " region is coarse, larger particle is had to form, the electron-diffraction diagram (Fig. 2 (c)) of its rule can illustrate that " B " region is face-centred cubic structure, prove after laser writing, GSBT film there occurs the transformation from non-crystal structure to face-centred cubic structure.Fig. 3 is the micro/nano level patterning made on GSBT film, the lines that laser irradiating part is divided into 300nm wide, is not irradiated with a laser partly wide for 5um band.
Embodiment 2:
Step 1): choose SiO
2as substrate, adopt conventional semiconductor cleaning process to be cleaned up by this substrate, clean up rear use dry gas and dry up, in vacuum oven with dry at 120 DEG C of-200 DEG C of temperature, be cooled to room temperature after take out;
Step 2): in the cover glass substrate 1 as above processed, adopt r. f. magnetron sputtering Ge
2bi
0.5sb
1.5te
5film, mode of deposition: background pressure 1 × 10
-5pa, sputtering power 30W, Ar flow is 25sccm, deposition pressure 0.1Pa, and base reservoir temperature is room temperature, depositing time 300s, and obtaining GSBT film thickness is 80nm.
Step 3): directly write with the subregion of laser at film sample.When the laser by suitable energy density, (present case is 0.3-3J/cm
2between) irradiate sample time, irradiated surface can undergo phase transition.Pre-irradiation sample is non-crystalline state, and the portions turn be irradiated with a laser is crystalline state.Observe under an optical microscope and can find that the reflectivity of film surface changes, by the GSST reflection spectrum changing conditions (shown in Fig. 3) after in situ detection induced with laser, under can finding different laser power density radiation situation, the reflectivity of film is different.Along with laser power rises, the reflectivity of illuminated film rises gradually, until stablize to a value determined.
Embodiment 3:
Step 1): choose single crystalline Si sheet as substrate, adopt conventional semiconductor cleaning process to be cleaned up by this substrate, clean up rear use dry gas and dry up, in vacuum oven with dry at 120 DEG C of-200 DEG C of temperature, be cooled to room temperature after take out;
Step 2): in the Si sheet substrate 1 as above processed, adopt r. f. magnetron sputtering Ge
2bi
0.3sb
1.7te
5film, mode of deposition: background pressure 1 × 10
-5pa, sputtering power 40W, Ar flow is 25sccm, deposition pressure 0.1Pa, and base reservoir temperature is room temperature, depositing time 200s, and obtaining GST film thickness is 50nm.
Step 3): directly write with the subregion of laser at film sample.When the laser by suitable energy density, (present case is 1.5J/cm
2) irradiate sample time, irradiated surface can undergo phase transition.Pre-irradiation sample is non-crystalline state, and the portions turn be irradiated with a laser is crystalline state.Fig. 4 shows the electrode pattern using laser radiation to obtain.
Embodiment 4:
Step 1): choose single crystalline Si sheet as substrate, adopt conventional semiconductor cleaning process to be cleaned up by this substrate, clean up rear use dry gas and dry up, in vacuum oven with dry at 120 DEG C of-200 DEG C of temperature, be cooled to room temperature after take out;
Step 2): in the Si sheet substrate 1 as above processed, adopt r. f. magnetron sputtering Ge
2sn
0.5sb
1.5te
5film, mode of deposition: background pressure 1 × 10
-5pa, sputtering power 40W, Ar flow is 25sccm, deposition pressure 0.1Pa, and base reservoir temperature is room temperature, depositing time 200s, and obtaining GSST film thickness is 50nm.
Step 3): directly write with the subregion of laser at film sample.When the laser by suitable energy density, (present case is 1.5J/cm
2) irradiate sample time, irradiated surface can undergo phase transition.Pre-irradiation sample is non-crystalline state, and the portions turn be irradiated with a laser is crystalline state.Fig. 5 shows the microelectrode pattern using laser radiation to obtain.
Embodiment 5:
Step 1): choose single crystalline Si sheet as substrate, adopt conventional semiconductor cleaning process to be cleaned up by this substrate, clean up rear use dry gas and dry up, in vacuum oven with dry at 120 DEG C of-200 DEG C of temperature, be cooled to room temperature after take out;
Step 2): in the Si sheet substrate 1 as above processed, adopt r. f. magnetron sputtering Ge
2sb2Te
5film, mode of deposition: background pressure 1 × 10
-5pa, sputtering power 40W, Ar flow is 25sccm, deposition pressure 0.1Pa, and base reservoir temperature is room temperature, depositing time 200s, and obtaining GST film thickness is 50nm.
Step 3): directly write with the subregion of laser at film sample.When the laser by suitable energy density, (present case is 1.5J/cm
2) irradiate sample time, irradiated surface can undergo phase transition.Pre-irradiation sample is non-crystalline state, and the portions turn be irradiated with a laser is crystalline state.Fig. 6 shows the micro circuit pattern using laser radiation to obtain.
In the above-described embodiments, the cleaning process of substrate is conventional cleaning means, and this is understandable to those skilled in the art, and vacuum drying object is water molecules residual on the substrate after removing cleaning.Utilizing magnetron sputtering method to prepare amorphous GST, GSBT, GSST film has been preparation method well known in the art, therefore those of ordinary skill in the art can understand, mode of deposition mentioned in the above-described embodiments, such as sputtering power, pressure, gas flow etc. are not unalterable.The method preparing film is also not limited to magnetron sputtering, also other sedimentations such as available ions sputtering, as long as can prepare non-crystalline state phase change material film just can realize the object of the invention.In other embodiments of the invention, substrate is not limited to substrate of glass, quartz, the hard substrate such as Si, PC, also can be flexible substrates, can realize the object of the invention equally.
Although make specific descriptions to the present invention with reference to the above embodiments, but for the person of ordinary skill of the art, should be appreciated that and can not depart from the amendment carried out based on content disclosed by the invention within spirit of the present invention and scope or improve also all within spirit of the present invention and scope.
Claims (8)
1. use laser direct-writing to prepare a method for microcircuit, the method comprises the following steps:
Step 1): choose substrate, it is cleaned and drying treatment;
Step 2): physical gas-phase deposition is adopted to substrate, growth one deck amorphous inorganic phase change material film;
Step 3): first use laser directly to write out designed pattern on grown amorphous inorganic phase change material film, and make the film of inscription part be crystalline state by amorphous state by laser radiation.
2. method according to claim 1, is characterized in that, described step 3) comprising: use laser direct-writing directly to write needing the film position of microcircuit, described amorphous inorganic phase change material film is GST or GBST or GSST film.
3. method according to claim 1, is characterized in that, described substrate is glass material substrate, monocrystal chip or high molecular polymer, and substrate is hard or soft substrate.
4. method according to claim 3, is characterized in that, described glass material substrate comprises common lid slide, slide glass or silica glass; Described monocrystal chip comprises single crystalline Si sheet, gallium arsenide substrate, gan substrate.
5. method according to claim 3, is characterized in that, described high molecular polymer substrate is the flexible substrate of isolation material, and it comprises PMMA, PC substrate.
6. method according to claim 1, described step 2) in physical gas-phase deposition be magnetically controlled DC sputtering or rf magnetron sputtering or ion sputtering or pulsed laser deposition.
7. method according to claim 1, is characterized in that, the width of the microcircuit structures inscribed is from nanoscale to micro-meter scale, and the energy density scope of described laser radiation is 0.3-3J/cm
2.
8. method according to claim 1, is characterized in that, the thickness of described film is the scope 2-10nm of 20nm-500nm, surfaceness.
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Cited By (5)
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| CN106637075A (en) * | 2016-10-14 | 2017-05-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Method for preparing micro-nano hollow structure by laser direct writing |
| CN108633186A (en) * | 2018-04-18 | 2018-10-09 | 北京航空航天大学 | A kind of method that large-area laser direct write prepares flexible miniature telegraph circuit |
| CN109317228A (en) * | 2018-11-01 | 2019-02-12 | 北京工业大学 | One kind being based on the micro-machined micro-flow control chip preparation method of body laser inner carving |
| CN114815074A (en) * | 2022-06-30 | 2022-07-29 | 中山大学 | Optical modulation micro-ring resonant cavity and preparation method thereof |
| CN114815330A (en) * | 2022-06-30 | 2022-07-29 | 中山大学 | MZI type optical switch capable of accurately regulating and controlling phase of interference arm and preparation method thereof |
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| CN109317228A (en) * | 2018-11-01 | 2019-02-12 | 北京工业大学 | One kind being based on the micro-machined micro-flow control chip preparation method of body laser inner carving |
| CN109317228B (en) * | 2018-11-01 | 2021-02-26 | 北京工业大学 | Micro-fluidic chip preparation method based on laser inner carving micro-machining |
| CN114815074A (en) * | 2022-06-30 | 2022-07-29 | 中山大学 | Optical modulation micro-ring resonant cavity and preparation method thereof |
| CN114815330A (en) * | 2022-06-30 | 2022-07-29 | 中山大学 | MZI type optical switch capable of accurately regulating and controlling phase of interference arm and preparation method thereof |
| CN114815074B (en) * | 2022-06-30 | 2022-09-27 | 中山大学 | Optical modulation micro-ring resonant cavity and preparation method thereof |
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