CN104836018A - Nano-antenna based on tunneling diode - Google Patents
Nano-antenna based on tunneling diode Download PDFInfo
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- CN104836018A CN104836018A CN201510217922.2A CN201510217922A CN104836018A CN 104836018 A CN104836018 A CN 104836018A CN 201510217922 A CN201510217922 A CN 201510217922A CN 104836018 A CN104836018 A CN 104836018A
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Abstract
The invention discloses a nano-antenna based on a tunneling diode. The nano-antenna comprises a left arm, a right arm and a rectifier. The left arm and the right arm form mirror images, and intersect to form a bowknot. The rectifier is clamped between the left arm and the right arm, and the left arm, the rectifier and the right arm are integrally molded. Radiators of the left arm and the right arm are triangle-shaped, sector-shaped or cone-shaped. The rectifier is the metal-insulator-metal type tunneling rectifier. The left arm of the nano-antenna is made of one material selected from Au, Pt, Ag, Cu, Al, Ni, V, Cr and W. The right arm of the nano-antenna is made of one material selected from Ni, Ti, V, Ta, Nb, Co, Al, Cu and W. According to the invention, the simulation provides theoretical guidance for rectification antenna experiment preparation, especially for solving a matching problem of an antenna system and the rectifier, the improvement of the photoelectric response intensity of the antenna is facilitated, and therefore the application of the antenna is facilitated.
Description
Technical field
The present invention relates to a kind of nano-antenna based on tunnel-through diode, belong to optoelectronics and nanoscale science and technology field.
Background technology
RECTIFYING ANTENNA a kind ofly realizes the device of luminous energy to electric energy conversion, from its history having had more than 50 year so far that is born.The RECTIFYING ANTENNA of metal-insulator-metal type (MIM) diode structure is with low cost, structure is simple, environmental friendliness, be a kind of photoelectric energy conversion devices having much prospect.
Different from conventional photovoltaic battery, RECTIFYING ANTENNA is not by the restriction of semiconductor energy gap, utilize the fluctuation principle of light, by reception antenna, radiant light is converted to high-frequency alternating current (AC), high-frequency alternating current is converted into direct current (DC) thus for applied load through rectifier diode.Reach maximum in the absorption of reception antenna to radiant light, under condition that antenna and rectifier mate completely, RECTIFYING ANTENNA can realize the conversion completely from luminous energy to electric energy, and its battery efficiency can reach the limiting efficiency of Carnot's theorem.Still be in experiment for the research of RECTIFYING ANTENNA in the world at present, antenna battery truly does not also occur, the subject matter faced be prepared device not there is photoelectric respone or the electrical signal that records extremely faint to such an extent as to be difficult to detect.One of principal element causing these problems is metal antenna system and not the mating of rectifier, and both realizing, the key of coupling is the careful design of dielectric layer.The design of dielectric layer mainly comprises two aspects, i.e. dimensional parameters (factor such as thickness of dielectric layers and interface area) and self component characteristic (factor such as dielectric property and the conduction property) impact on RECTIFYING ANTENNA Photoelectric behavior.Owing to being experimentally faced with the shortcomings such as high, the repeatable difference of cost and Design Mechanism vacancy to the design of dielectric layer, therefore, theoretically research & design is carried out to dielectric layer structure, dielectric property and electric conductivity, and thus guiding experiment to prepare the device had compared with high light electroresponse very urgent and important.
Based on existing theory calculate background, the dielectric layer design designing this RECTIFYING ANTENNA needs the Major Difficulties overcome to have: 1. pair RECTIFYING ANTENNA realizes the theory calculate in optics and electricity simultaneously; 2. dielectric layer structure, dielectric property and conduction property are to the analysis of RECTIFYING ANTENNA photoelectric properties affecting laws; 3., by the design to RECTIFYING ANTENNA dielectric layer, realize antenna system and mate with rectifier.
Summary of the invention
The technical problem that the present invention solves is: overcome the deficiencies in the prior art, a kind of nano-antenna based on tunnel-through diode is provided, overcome metal antenna system and the unmatched problem of rectifier in the experiment of existing RECTIFYING ANTENNA, and improve the theoretical research that the structure of dielectric layer, dielectric property and conduction property affect RECTIFYING ANTENNA Photoelectric behavior.
Technical scheme of the present invention is: a kind of nano-antenna based on tunnel-through diode, comprises left arm, right arm and rectifier; Described left arm and right arm are mirror-image structure; Left arm and right arm are crossed as bow-tie shape, accompany rectifier, and three in one are shaping in the middle of left arm and right arm;
The radiant body shape of described left arm and right arm is triangle or fan-shaped or taper;
Described rectifier is metal-insulator-metal type type tunnelling rectifier;
Any one in described nano-antenna left arm choice of material Au, Pt, Ag, Cu, Al, Ni, V, Cr and W;
Any one in described nano-antenna right arm choice of material Ni, Ti, V, Ta, Nb, Co, Al, Cu and W;
Insulating material in described rectifier chooses NiO, TiO
2, Ta
2o
5, Nb
2o
5, V
2o
5, V
2o
3, CoO, Al
2o
3, CuO, SiO
2, titanate, any one in niobates and germanate;
Insulation thickness in described rectifier is 2 ~ 15nm, and the insulator in described rectifier and the contact area of metal level are 100nm
2~ 1 μm
2.
The relative dielectric constant of the insulating material in the rectifier chosen is 1 ~ 1000, and conductivity is 10
-14~ 10
7s/m.
Left arm choice of material gold, right arm choice of material titanium, the insulating material in rectifier chooses titanium dioxide.
The present invention's advantage is compared with prior art: the present invention is comprehensive existing theoretical calculation method and 3 D electromagnetic Flow Field Numerical computational methods, propose a kind of nanometer RECTIFYING ANTENNA optimized about dielectric layer, the integral structure that this RECTIFYING ANTENNA is made up of MIM diode.Compared to existing method for designing, present invention achieves and optics and electricity calculating are carried out to RECTIFYING ANTENNA simultaneously, present invention achieves the parameter optimization to the dielectric property and conduction property comprising dielectric layer, give the method that antenna system and rectifier realize mating simultaneously.
Accompanying drawing explanation
Fig. 1 is the structure chart of nanometer RECTIFYING ANTENNA;
Fig. 2 is resonant wavelength and the Localized field enhancement coefficient figure that nanometer RECTIFYING ANTENNA optimizes front and back;
Fig. 3 is the output current figure before and after nanometer RECTIFYING ANTENNA is optimized;
Fig. 4 is the induced voltage figure before and after nanometer RECTIFYING ANTENNA is optimized.
Embodiment
A kind of nano-antenna based on tunnel-through diode of the present invention, comprises left arm, right arm and rectifier; Described left arm and right arm are mirror-image structure; Left arm and right arm are crossed as bow-tie shape, accompany rectifier, and three in one are shaping in the middle of left arm and right arm; The radiant body shape of described left arm and right arm is triangle or fan-shaped or taper; Described rectifier is metal-insulator-metal type type tunnelling rectifier.Wherein left arm includes but are not limited to Au, Pt, Ag, Cu, Al, Ni, V, Cr and W, and right arm comprises but is not limited only to Ni, Ti, V, Ta, Nb, Co, Al, Cu and W etc., and rectifier includes but are not limited to NiO, TiO
2, Ta
2o
5, Nb
2o
5, V
2o
5, V
2o
3, CoO, Al
2o
3, CuO, SiO
2, titanate, niobates and germanate etc., the antenna integrated sandwich structure of a series of MIM diode rectification can be formed thus.
The present invention proposes the design of RECTIFYING ANTENNA rectifier and dielectric layer.In the design of dielectric layer, the dielectric property of dielectric layer and conduction property be its relative dielectric constant corresponding and conductivity respectively.In the dielectric layer material of above-mentioned use, relative dielectric constant is 1-1000, prioritizing selection 2-400; Conductivity is 10
-14-10
7s/m, prioritizing selection 10
-12-10
5s/m.The thickness of dielectric layer is 2-15nm, preferably selects 3-8nm.The contact area of diode metal layer and insulating barrier is 100nm
2-1 μm
2, prioritizing selection 1000nm
2-50000nm
2.Dielectric layer material comprises but is not limited only to TiO
2, NiO, Ta
2o
5, Nb
2o
5, V
2o
5, V
2o
3, CoO, Al
2o
3, CuO, SiO
2, titanate, niobates and germanate etc.Prioritizing selection TiO
2, NiO, Ta
2o
5, Nb
2o
5.
For the RECTIFYING ANTENNA model of above-mentioned design, the present invention adopts 3 D electromagnetic Flow Field Numerical computational methods to carry out analogue simulation, comprise but be not limited only to moment method (MOM), Finite-Difference Time-Domain Method (FDTD) and Finite Element Method (FEM) etc., prioritizing selection Finite Element Method, adopts the simulation software of Finite Element comprise but be not limited only to Ansoft HFSS and COMSOL Multiphysics etc.
Utilize above-mentioned numerical computation method, first set up RECTIFYING ANTENNA model, then arrange concrete parametric solution, and set up corresponding target function, last Dynamic simulation operation program, obtains result.The surface plasma resonance that incident light and the effect of metal free electron produce can produce a huge local fields in RECTIFYING ANTENNA dielectric layer, by calculating the local fields intensity at RECTIFYING ANTENNA dielectric layer center, the optical property of RECTIFYING ANTENNA under differing dielectric constant and conductivity can be obtained, i.e. corresponding response wave band λ
rswith Localized field enhancement COEFFICIENT K, wherein K=|E (ω) |/| E
0|.
The present invention, by solving 3 D electromagnetic field maxwell equation group, gives the theoretical calculation formula of RECTIFYING ANTENNA output current and induced voltage simultaneously.When electromagnetic wave is propagated in media as well, dielectric constant describes with plural number usually.ε (ω)=ε
1(ω)+i ε
2(ω), known by circuital law
the equivalents of its current density is J=-i ω ε
0[ε
1(ω)-1] E+ ω ε
2(ω) ε
0e, left term is displacement current, and perpendicular to direction of an electric field, after one-period, electric charge acting is zero; Right term is conduction current, with direction of an electric field homophase, has the form of Ohm's law.In like manner, the induced voltage between two metal electrodes can be expressed as
Below in conjunction with drawings and Examples, the invention will be further described.
The present embodiment is that a kind of model of nanometer RECTIFYING ANTENNA is set up, and described RECTIFYING ANTENNA is left arm-rectifier-right arm, i.e. metal I-dielectric layer-metal II integration sandwich structure, as shown in Figure 1.Target operation wavelength is 11 μm, and RECTIFYING ANTENNA geometric parameter arranges as follows, and antenna pattern is fan-shaped bowknot, and antenna thickness is h=100nm, antenna total length L=5 μm, subtended angle θ=75 °, the effective spacing G of two-arm
eff=300nm, middle thickness of dielectric layers d=5nm.Metal I is chosen for gold (Au), and metal II is chosen for titanium (Ti), and dielectric layer is relative dielectric constant 50, conductivity gets 10
-6the TiO of S/m
2.
Described RECTIFYING ANTENNA adopts the 3D domain electromagnetic field software for calculation AnsoftHFSS based on Finite Element Method to realize the design of RECTIFYING ANTENNA structure.Calculating convergent iterations number of times is 20, and adaptive iteration analysis precision is 0.01, and scanning wavelength scope is from 5-20 μm.The driving source of nanometer RECTIFYING ANTENNA device is plane wave, and direction is z-axis, namely perpendicular to the direction of antenna; Polarization direction is y-axis, and namely along the axial direction of antenna arm, incident light electric field amplitude is 1V/m.By calculating results such as can obtaining the Localized field enhancement of nanometer RECTIFYING ANTENNA, output current and induced voltage.The surface plasma resonance that incident light and the effect of metal free electron produce can produce a huge local fields in the rectifier of RECTIFYING ANTENNA, by calculating the local fields intensity at rectifier center, the optical property of RECTIFYING ANTENNA under various geometric can be obtained, i.e. corresponding response wave band λ
rswith Localized field enhancement COEFFICIENT K, wherein K=|E (ω) |/| E
0|, because incident wave electric field amplitude is 1V/m, therefore | E
0|=1V/m, just can obtain corresponding field by the electric field magnitude calculated under different frequency and strengthen COEFFICIENT K.When electromagnetic wave is propagated in media as well, dielectric constant plural number describes.ε (ω)=ε
1(ω)+i ε
2(ω), known by circuital law
the equivalents of its current density is J=-i ω ε
0[ε
1(ω)-1] E+ ω ε
2(ω) ε
0e, left term is displacement current, and perpendicular to direction of an electric field, after one-period, electric charge acting is zero; Right term is conduction current, with direction of an electric field homophase, has the form of Ohm's law.In like manner, the induced voltage between two metal electrodes can be expressed as
By the iterative analysis to dielectric constant and conductivity, rear TiO can be optimized
2dielectric layer relative dielectric constant be 2, conductivity is 10
-8s/m, lower Fig. 2, Fig. 3, Fig. 4 are the photoelectricity performance of RECTIFYING ANTENNA before and after the optimization by calculating, and wherein Fig. 2 is resonant wavelength and the Localized field enhancement coefficient figure that nanometer RECTIFYING ANTENNA optimizes front and back; Fig. 3 is the output current figure before and after nanometer RECTIFYING ANTENNA is optimized; Fig. 4 is the induced voltage figure before and after nanometer RECTIFYING ANTENNA is optimized.According to above result, can find out and can realize mating of antenna system and rectifier by the relative dielectric constant of optimized medium layer and conductivity, the resonant wavelength of RECTIFYING ANTENNA is adjusted in the scope of expection, thus obtains stronger local fields and larger output current and induced voltage.
The content be not described in detail in specification of the present invention belongs to the known technology of those skilled in the art.
Claims (4)
1. based on a nano-antenna for tunnel-through diode, it is characterized in that: comprise left arm, right arm and rectifier; Described left arm and right arm are mirror-image structure; Left arm and right arm are crossed as bow-tie shape, accompany rectifier, and three in one are shaping in the middle of left arm and right arm;
The radiant body shape of described left arm and right arm is triangle or fan-shaped or taper;
Described rectifier is metal-insulator-metal type type tunnelling rectifier;
Any one in described nano-antenna left arm choice of material Au, Pt, Ag, Cu, Al, Ni, V, Cr and W;
Any one in described nano-antenna right arm choice of material Ni, Ti, V, Ta, Nb, Co, Al, Cu and W;
Insulating material in described rectifier chooses NiO, TiO
2, Ta
2o
5, Nb
2o
5, V
2o
5, V
2o
3, CoO, Al
2o
3, CuO, SiO
2, titanate, any one in niobates and germanate;
2. a kind of nano-antenna based on tunnel-through diode according to claim 1, it is characterized in that: the insulation thickness in described rectifier is 2 ~ 15nm, the insulator in described rectifier and the contact area of metal level are 100nm
2~ 1 μm
2.
3. a kind of nano-antenna based on tunnel-through diode according to claim 1, is characterized in that: the relative dielectric constant of the insulating material in the rectifier chosen is 1 ~ 1000, and conductivity is 10
-14~ 10
7s/m.
4. a kind of nano-antenna based on tunnel-through diode according to claim 1, is characterized in that: left arm choice of material gold, right arm choice of material titanium, the insulating material in rectifier chooses titanium dioxide.
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|---|---|---|---|
| CN201510217922.2A CN104836018B (en) | 2015-04-30 | 2015-04-30 | A kind of nano-antenna based on tunnel-through diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510217922.2A CN104836018B (en) | 2015-04-30 | 2015-04-30 | A kind of nano-antenna based on tunnel-through diode |
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| Publication Number | Publication Date |
|---|---|
| CN104836018A true CN104836018A (en) | 2015-08-12 |
| CN104836018B CN104836018B (en) | 2018-05-22 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993719A (en) * | 2019-11-25 | 2020-04-10 | 国家纳米科学中心 | Optical frequency response electron tunneling structure, preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7091918B1 (en) * | 2003-10-24 | 2006-08-15 | University Of South Florida | Rectifying antenna and method of manufacture |
| CN101714837A (en) * | 2009-12-03 | 2010-05-26 | 高杰 | Solar battery with nano-sized antenna |
| CN104319471A (en) * | 2014-10-17 | 2015-01-28 | 哈尔滨工业大学深圳研究生院 | Tunable nanometer antenna and preparation method thereof |
-
2015
- 2015-04-30 CN CN201510217922.2A patent/CN104836018B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7091918B1 (en) * | 2003-10-24 | 2006-08-15 | University Of South Florida | Rectifying antenna and method of manufacture |
| CN101714837A (en) * | 2009-12-03 | 2010-05-26 | 高杰 | Solar battery with nano-sized antenna |
| CN104319471A (en) * | 2014-10-17 | 2015-01-28 | 哈尔滨工业大学深圳研究生院 | Tunable nanometer antenna and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| KWANGSIK CHOI ET AL: ""A Focused Asymmetric Metal-Insulator-Metal Tunneling Diode: Fabrication, DC Characteristics and RF Rectification Analysis"", 《IEEE TRANSACTIONS ON ELECTRON DEVICES》 * |
| ROLF KOOLE ET AL: ""Chemisorption Determines the Photovoltage of a Ti/TiO2/Au/Dye Internal Electron Emission Photovoltaic Cell"", 《THE JOURNAL OF PHYSICAL CHEMISTRY B》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110993719A (en) * | 2019-11-25 | 2020-04-10 | 国家纳米科学中心 | Optical frequency response electron tunneling structure, preparation method and application thereof |
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| CN104836018B (en) | 2018-05-22 |
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