CN104819736B - A kind of big bandwidth photoelectric detector of high power - Google Patents
A kind of big bandwidth photoelectric detector of high power Download PDFInfo
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- CN104819736B CN104819736B CN201510128829.4A CN201510128829A CN104819736B CN 104819736 B CN104819736 B CN 104819736B CN 201510128829 A CN201510128829 A CN 201510128829A CN 104819736 B CN104819736 B CN 104819736B
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Abstract
The invention discloses a kind of big bandwidth photoelectric detector of high power, including build-out resistor and N number of photoelectric detection unit, wherein, N is the integer more than or equal to 2, photoelectric detection unit includes the first inductance, the second inductance, electric capacity and photodiode, one end of first inductance is the input of photoelectric detection unit, the other end of first inductance, one end of electric capacity connect with one end of the second inductance, the other end of electric capacity connects with the anode of photodiode, the minus earth of photodiode, the other end of the second inductance are the output end of photoelectric detection unit；N number of photoelectric detection unit is sequentially sequentially connected in series, wherein the inductance of the inductance of the first inductance and the second inductance is equal,L represents the inductance of the first inductance or the inductance of the second described inductance, ZαRepresent the characteristic impedance of photoelectric detection unit, Zα=50 Ω, CdRepresent the junction capacity of photodiode, CcRepresent the capacitance of electric capacity；Advantage is to improve power output to add bandwidth of operation again.
Description
Technical field
The present invention relates to a kind of detecting technique, more particularly, to a kind of big bandwidth photoelectric detector of high power.
Background technology
The fast development of modern Large Copacity optical communication technique so that the device important to radio over fibre system (ROF system)
The performance requirement of part --- photodetector also more and more higher.With the appearance of fiber amplifier, photodetector needs to bear
High luminous power；Communicate frequency more and more higher, and photodetector needs to be operated in the state of big bandwidth.Therefore, big bandwidth and Gao Gong
Rate turns into the important indicator for weighing photoelectric detector performance.
Traditional photodetector includes a photoelectric detection unit, the pole of photoelectric detection unit generally use photoelectricity two
Pipe, its power output is smaller and bandwidth is limited by junction capacity inside photoelectric detection unit with load resistance product, in ROF system
In, it usually needs a millimeter wave power amplifier is placed after traditional photoelectric detection unit to amplify penetrating for photoelectric detection unit output
Frequency signal is to ensure to have enough power to enable signal to go out from aerial radiation.But millimeter wave power amplifier working frequency range is higher, into
This is higher, and high cost limits the commercial application of ROF system.
In order to develop the photodetector of the big bandwidth of high power, the commercial application of ROF system is realized, designer tastes
Various methods on probation improve the bandwidth and power of detector, for example structure by changing probe unit etc..But single detection
The improvement of unit is limited after all, has researcher to find to export multiple probe units by power synthetic technique again later
Power combing, power output can be greatly enhanced, obtain high-power photodetector.But now it is only capable of realizing power
Improve, bandwidth of operation does not improve, and later we have found that in application power synthetic technique, using certain circuit structure, goes back
The bandwidth of operation of detector can be improved, can thus develop the photodetector of the big bandwidth of high power.There is high power big
The photodetector of bandwidth, just without rearmounted expensive millimeter wave amplifier processing is amplified to electric signal, so then can be with
Change whole ROF system structure, improve ROF system performance, reduce ROF system cost, realize full light ROF system, be advantageous to ROF
System it is practical.The output of multiple probe units is synthesized, it is first it is envisioned that multiple photodiodes are directly in parallel,
Although but so make detector and can realize the power combing of multiple photodiodes, higher power is obtained, its work
Bandwidth can be reduced to the 1/N of single photodiode, and N represents the quantity of photodiode.A kind of existing photodetector is adopted
Synthetic technology is that multiple photodiodes are cascaded with inductance element, and the technology can also realize multiple photodiodes
Power combing, improve power output.But the bandwidth of operation of detector is identical with the bandwidth of operation of single photodiode, detection
The bandwidth of operation of device can not be improved.
In view of this, a big bandwidth of high power that can not only improve power output, while can also improve bandwidth of operation is designed
Photodetector, it is significant to ROF system commercial application.
The content of the invention
The technical problems to be solved by the invention be to provide it is a kind of can not only improve power output, while can also improve work
Make the big bandwidth photoelectric detector of high power of bandwidth.
Technical scheme is used by the present invention solves above-mentioned technical problem：A kind of big bandwidth photoelectric detector of high power,
Including build-out resistor and N number of photoelectric detection unit, wherein, N is the integer more than or equal to 2, and described photoelectric detection unit includes
First inductance, the second inductance, electric capacity and photodiode, one end of the first described inductance is described photoelectric detection unit
Input, the other end of the first described inductance, one end of described electric capacity connect with one end of the second described inductance, described
The other end of electric capacity connected with the anode of described photodiode, the minus earth of described photodiode is described
The other end of second inductance is the output end of described photoelectric detection unit；One end ground connection of described build-out resistor is described
The other end of build-out resistor connects with the input of the 1st described photoelectric detection unit, described k-th photoelectric detection unit
Output end connected with the input of the K+1 described photoelectric detection unit, K=1,2 ... ..., N-1, described n-th light
The output end of electric probe unit is the output end of the described big bandwidth photoelectric detector of high power；The inductance of the first described inductance
It is equal with the inductance of the second described inductance,L represents the inductance or described second of the first inductance
The inductance of inductance, ZαRepresent the characteristic impedance of photoelectric detection unit, Zα=50 Ω, CdRepresent the junction capacity of photodiode, CcTable
Show the capacitance of electric capacity.
The quantity of described photoelectric detection unit is 4, the junction capacity C of described photodioded=0.2pF, it is described
Electric capacity capacitance Cc=0.2pF.
Compared with prior art, the advantage of the invention is that being sequentially connected by N number of photoelectric detection unit, each photoelectricity is visited
Surveying unit includes the first inductance, the second inductance, electric capacity and photodiode, the inductance of L the first inductance of expression or described the
The inductance of two inductance, CdRepresent the junction capacity of photodiode, in the photodetector course of work, electric current of its output end etc.
The each T-shaped photoelectric detection unit output current sum in portion in the inner, is achieved in each photoelectric detection unit in photodetector
Power combing, the cut-off frequency of photodetectorCcRepresent electric capacity
Capacitance, and the cut-off frequency of photodetector traditional under the same termsPhotodetector of the present invention
Cut-off frequency is the cut-off frequency of traditional photodetectorTimes, i.e., the bandwidth of photodetector of the present invention is relative
Improved in prior artTimes, thus the big bandwidth photoelectric detector of high power of the invention can not only improve output
Power, while can also improve bandwidth of operation.
Brief description of the drawings
Fig. 1 (a) is the circuit diagram of the photodetector of the present invention；
Fig. 1 (b) is the circuit diagram of single photoelectric detection unit in photodetector of the invention；
Fig. 2 (a) is the output current analogous diagram of the photodetector of the embodiment of the present invention；
Fig. 2 (b) is the output current analogous diagram of traditional photodetector；
Fig. 2 (c) is the output for cascading the photodetector of four photodiodes using inductance element in the prior art
Current simulations figure；
Fig. 3 (a) is the working frequency analogous diagram of the photodetector of the embodiment of the present invention；
Fig. 3 (b) is the working frequency analogous diagram of traditional photodetector；
Fig. 3 (c) is to be visited in the prior art using inductance element to cascade the photoelectricity of four photodiodes
Survey the working frequency analogous diagram of device；
Fig. 4 (a) is output current analogous diagram when photodetector of the invention includes 8 photoelectric detection units；
Fig. 4 (b) is working frequency analogous diagram when photodetector of the invention includes 8 photoelectric detection units.
Embodiment
The present invention is described in further detail below in conjunction with accompanying drawing embodiment.
Embodiment：As shown in Fig. 1 (a) and Fig. 1 (b), a kind of big bandwidth photoelectric detector of high power, including build-out resistor R1
With N number of photoelectric detection unit T, wherein, N is integer more than or equal to 2, and photoelectric detection unit T includes the first inductance L1, the second electricity
The input that sense L2, electric capacity C1 and photodiode D1, the first inductance L1 one end are photoelectric detection unit T, the first inductance L1
The other end, electric capacity C1 one end connected with the second inductance L2 one end, the electric capacity C1 other end and photodiode D1 sun
Pole connects, photodiode D1 minus earth, and the second inductance L2 other end is photoelectric detection unit T output end；Matching
Resistance R1 one end ground connection, the build-out resistor R1 other end and the 1st photoelectric detection unit T input connection, k-th photoelectricity
Probe unit T output end connects with the K+1 photoelectric detection unit T input, K=1,2 ... ..., N-1, n-th photoelectricity
Probe unit T output end is the output end of the big bandwidth photoelectric detector of high power；First inductance L1 inductance and the second inductance
L2 inductance is equal,L represents the first inductance L1 inductance or the second inductance L2 inductance, ZαRepresent
Photoelectric detection unit T characteristic impedance, Zα=50 Ω, CdRepresent photodiode D1 junction capacity, CcRepresent electric capacity C1 electric capacity
Amount.
The junction capacity of existing photodiode is usually 0.15-0.2pF, in the present embodiment, photodiode D1 knot
Electric capacity Cd=0.2pF, electric capacity C1 capacitance Cc=0.2pF, photoelectric detection unit T quantity are 4.According to formulaThe first inductance L1 inductance and the second inductance L2 inductance L=250pH is calculated.
The cut-off frequency of the photodetector of the present embodimentWill
Obtained after substitutionThe cut-off frequency of traditional photodetector (photodiode) under the same termsThe bandwidth of the photodetector of the present embodiment rises to relative to traditional photodetector, its bandwidthTimes.The electric current of photodetector output end is equal to its internal each T-shaped photoelectric detection unit output current sum, light
The power of each photoelectric detection unit is synthesized in electric explorer.
Under the same conditions, the photodetector to the present embodiment, traditional photodetector (i.e. photodiode) and
Carried out respectively under the same conditions using inductance element to cascade the photodetector of four photodiodes in the prior art
Output current and bandwidth emulation.The photodetector of the embodiment of the present invention, traditional photodetector and use in the prior art
Inductance element is shown to cascade output current analogous diagram such as Fig. 2 (a)~Fig. 2 (c) of the photodetector of four photodiodes,
The photodetector of the embodiment of the present invention, traditional photodetector and four light are cascaded using inductance element in the prior art
Shown in working frequency analogous diagram such as Fig. 3 (a)~Fig. 3 (c) of the photodetector of electric diode.Analysis chart 2 (a)~Fig. 2 (c) can
Know, the output current of the photodetector of the present embodiment is 100mA, and the output current of traditional photodetector is 50mA, existing
Have and inductance element is used in technology to cascade the output current of the photodetector of four photodiodes as 200mA, this implementation
The output current of the photodetector of example is twice of traditional photodetector, is in the prior art using inductance element come level
Join the half of the photodetector of four photodiodes, i.e., the photodetector of the present embodiment is relative to traditional photodetection
Device power ascension, relative to the photodetector power for cascading four photodiodes using inductance element in the prior art
It has been lost.Analysis chart 3 (a)~Fig. 3 (c) understands that the bandwidth of operation (- three dB bandwidth) of the photodetector of the present embodiment is
63G, traditional photodetector and the photodetector for cascading four photodiodes using inductance element in the prior art
Bandwidth of operation (- three dB bandwidth) be 31G, the bandwidth of operation of the photodetector of the present embodiment is traditional photodetector
Twice of the bandwidth of operation of the photodetector of four photodiodes is cascaded using inductance element in the prior art.By with
Upper analysis understands, the photodetector of the present embodiment using inductance element relative to cascading four poles of photoelectricity two in the prior art
The photodetector of pipe, has been lost Partial Power, and bandwidth is improved.But the photodetector of the present embodiment relative to
Increase can be passed through to cascade the power attenuation of the photodetector of four photodiodes using inductance element in the prior art
The number of photoelectric detection unit overcomes.When the photodetector of the present invention includes 8 photoelectric detection units, its output current
Shown in analogous diagram such as Fig. 4 (a), shown in working frequency analogous diagram such as Fig. 4 (b).Analysis chart 4 (a) understands, photoelectricity now of the invention
The output current amplitude of detector has reached 200mA, i.e., with the prior art cascades four poles of photoelectricity two using inductance element
The photodetector power output of pipe is identical；Analysis chart 4 (b) understands, the bandwidth of operation of photodetector now of the invention (-
Three dB bandwidth) it is 63G, for the photodetector work band of four photodiodes is cascaded using inductance element in the prior art
Wide twice.Thus photodetector of the invention can both realize high power by adjusting the quantity of photoelectric detection unit or can
To obtain big bandwidth, high power and big bandwidth can be provided simultaneously with.
Claims (2)
1. a kind of big bandwidth photoelectric detector of high power, including build-out resistor and N number of photoelectric detection unit, wherein, N be more than etc.
In 2 integer, it is characterised in that described photoelectric detection unit includes the first inductance, the second inductance, electric capacity and photodiode,
One end of the first described inductance is the input of described photoelectric detection unit, the other end of the first described inductance, described
One end of electric capacity connected with one end of the second described inductance, the other end of described electric capacity and described photodiode
Anode connects, and the minus earth of described photodiode, the other end of the second described inductance is described photodetection list
The output end of member；One end ground connection of described build-out resistor, the other end of described build-out resistor and the described the 1st photoelectricity are visited
Survey the input connection of unit, the output end of described k-th photoelectric detection unit and the K+1 described photoelectric detection unit
Input connection, K=1,2 ... ..., N-1, the output end of described n-th photoelectric detection unit is big for described high power
The output end of bandwidth photoelectric detector；The inductance of the inductance of the first described inductance and the second described inductance is equal,L represents the inductance of the first inductance or the inductance of the second described inductance, ZαRepresent photoelectric detection unit
Characteristic impedance, Zα=50 Ω, CdRepresent the junction capacity of photodiode, CcRepresent the capacitance of electric capacity.
A kind of 2. big bandwidth photoelectric detector of high power according to claim 1, it is characterised in that described photodetection
The quantity of unit is 4, the junction capacity C of described photodioded=0.2pF, the capacitance C of described electric capacityc=0.2pF.
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| CN201510128829.4A CN104819736B (en) | 2015-03-24 | 2015-03-24 | A kind of big bandwidth photoelectric detector of high power |
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| CN201510128829.4A CN104819736B (en) | 2015-03-24 | 2015-03-24 | A kind of big bandwidth photoelectric detector of high power |
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| CN104819736B true CN104819736B (en) | 2018-02-27 |
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| JPH02140006A (en) * | 1988-11-19 | 1990-05-29 | Fujitsu Ltd | Dc coupling type photodetector |
| US5001336A (en) * | 1989-12-11 | 1991-03-19 | The Boeing Company | Optical signal summing device |
| CN202978824U (en) * | 2011-09-12 | 2013-06-05 | 李冰 | Photoelectric signal conversion and amplification device |
| CN102522958B (en) * | 2011-12-13 | 2014-12-24 | 宁波大学 | Photovoltaic millimeter wave power synthesis circuit |
| US9568360B2 (en) * | 2012-03-29 | 2017-02-14 | Shimadzu Corporation | Silicon photomultiplier with improved detection accuracy |
| CN104062018A (en) * | 2014-07-08 | 2014-09-24 | 山东大学 | Single-photon detector avalanche signal extraction circuit and application thereof |
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Effective date of registration: 20201207 Address after: Room 1,020, Nanxun Science and Technology Pioneering Park, No. 666 Chaoyang Road, Nanxun District, Huzhou City, Zhejiang Province, 313000 Patentee after: Huzhou You Yan Intellectual Property Service Co.,Ltd. Address before: 315211 Zhejiang Province, Ningbo Jiangbei District Fenghua Road No. 818 Patentee before: Ningbo University |