CN104819736B - A kind of big bandwidth photoelectric detector of high power - Google Patents
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Abstract
本发明公开了一种高功率大带宽光电探测器，包括匹配电阻和N个光电探测单元，其中，N为大于等于2的整数，光电探测单元包括第一电感、第二电感、电容和光电二极管，第一电感的一端为光电探测单元的输入端，第一电感的另一端、电容的一端和第二电感的一端连接，电容的另一端和光电二极管的阳极连接，光电二极管的阴极接地，第二电感的另一端为光电探测单元的输出端；N个光电探测单元按序依次串联，其中第一电感的电感和第二电感的电感相等，L表示第一电感的电感或者所述的第二电感的电感，Zα表示光电探测单元的特征阻抗，Zα＝50Ω，Cd表示光电二极管的结电容，Cc表示电容的电容量；优点是即提高了输出功率又增加了工作带宽。
The invention discloses a high-power and large-bandwidth photodetector, which includes a matching resistor and N photodetection units, wherein N is an integer greater than or equal to 2, and the photodetection unit includes a first inductance, a second inductance, a capacitor and a photodiode , one end of the first inductance is the input end of the photodetection unit, the other end of the first inductance and one end of the capacitor are connected to one end of the second inductance, the other end of the capacitor is connected to the anode of the photodiode, and the cathode of the photodiode is grounded. The other end of the two inductances is the output end of the photodetection unit; N photodetection units are connected in series in sequence, wherein the inductance of the first inductance is equal to the inductance of the second inductance, L represents the inductance of the first inductance or the inductance of the second inductance, Z α represents the characteristic impedance of the photodetection unit, Z α =50Ω, C d represents the junction capacitance of the photodiode, and C c represents the capacitance of the capacitor; advantages It is to improve the output power and increase the working bandwidth.
Description
技术领域technical field
本发明涉及一种光电探测技术，尤其是涉及一种高功率大带宽光电探测器。The invention relates to a photoelectric detection technology, in particular to a high-power and large-bandwidth photodetector.
背景技术Background technique
现代大容量光通信技术的快速发展，使得对光载无线系统(ROF系统)重要的器件——光电探测器的性能要求也越来越高。随着光纤放大器的出现，光电探测器需要承受高光功率；通信频点越来越高，光电探测器需要工作在大带宽的状态。因此，大带宽和高功率成为衡量光电探测器性能的重要指标。With the rapid development of modern high-capacity optical communication technology, the performance requirements of photodetectors, an important device in radio-on-fiber systems (ROF systems), are also getting higher and higher. With the emergence of optical fiber amplifiers, photodetectors need to withstand high optical power; the communication frequency is getting higher and higher, and photodetectors need to work in a state of large bandwidth. Therefore, large bandwidth and high power become important indicators to measure the performance of photodetectors.
传统的光电探测器包括一个光电探测单元，该光电探测单元通常采用光电二极管，其输出功率较小且带宽受光电探测单元内部结电容与负载电阻乘积的限制，在ROF系统中，通常需要在传统的光电探测单元后放置一个毫米波功放来放大光电探测单元输出的射频信号以保证有足够的功率使信号能从天线辐射出去。但是毫米波功放工作频段越高，成本越高，高昂的成本限制了ROF系统的产业化应用。A traditional photodetector includes a photodetection unit, which usually uses a photodiode, whose output power is small and whose bandwidth is limited by the product of the internal junction capacitance and load resistance of the photodetection unit. In ROF systems, it is usually necessary to A millimeter-wave power amplifier is placed behind the photodetection unit to amplify the radio frequency signal output by the photodetection unit to ensure that there is enough power for the signal to radiate from the antenna. However, the higher the operating frequency band of the millimeter-wave power amplifier, the higher the cost, which limits the industrial application of the ROF system.
为了研制出高功率大带宽的光电探测器，实现ROF系统的产业化应用，设计人员尝试用各种办法提高探测器的带宽和功率，譬如通过改变探测单元的结构等。然而单个探测单元的改善毕竟是有限的，后来又有研究人员发现通过功率合成技术将多个探测单元输出的功率合成，可以极大地提高输出功率，得到高功率的光电探测器。不过此时仅能实现功率提高，工作带宽没有改善，后来我们发现在应用功率合成技术时，利用一定的电路结构，还可提高探测器的工作带宽，这样就可以研制出高功率大带宽的光电探测器。有了高功率大带宽的光电探测器，就不用后置昂贵的毫米波放大器对电信号进行放大处理，如此则可以改变整个ROF系统结构，改善ROF系统性能，降低ROF系统成本，实现全光ROF系统，有利于ROF系统的实用化。要将多个探测单元的输出合成，首先想到的是将多个光电二极管直接并联，但这样做探测器虽然可以实现多个光电二极管的功率合成，得到较高的功率，但是其工作带宽会减少为单个光电二极管的1/N，N表示光电二极管的数量。已有的一种光电探测器采用的合成技术是用电感元件来级联多个光电二极管，该技术也可以实现多个光电二极管的功率合成，提高输出功率。但是探测器的工作带宽与单个光电二极管的工作带宽相同，探测器的工作带宽不能得到提高。In order to develop photodetectors with high power and wide bandwidth and realize the industrial application of ROF systems, designers try to increase the bandwidth and power of the detectors by various methods, such as changing the structure of the detection unit. However, the improvement of a single detection unit is limited after all. Later, researchers discovered that combining the output power of multiple detection units through power combining technology can greatly increase the output power and obtain a high-power photodetector. However, at this time, only the power can be increased, and the working bandwidth has not been improved. Later, we found that when applying power combining technology, using a certain circuit structure, the working bandwidth of the detector can also be improved, so that high-power and large-bandwidth optoelectronics can be developed. detector. With a photodetector with high power and wide bandwidth, there is no need to amplify the electrical signal with an expensive millimeter wave amplifier, which can change the structure of the entire ROF system, improve the performance of the ROF system, reduce the cost of the ROF system, and realize all-optical ROF The system is beneficial to the practical application of the ROF system. To combine the outputs of multiple detection units, the first thing that comes to mind is to connect multiple photodiodes directly in parallel. However, although the detector can realize the power combination of multiple photodiodes and obtain higher power, its working bandwidth will be reduced. It is 1/N of a single photodiode, and N represents the number of photodiodes. An existing combination technology adopted by a photodetector is to cascade multiple photodiodes with an inductance element. This technology can also realize power combination of multiple photodiodes to increase output power. However, the working bandwidth of the detector is the same as that of a single photodiode, and the working bandwidth of the detector cannot be improved.
鉴此，设计一款不仅可以提高输出功率，同时也能提高工作带宽的高功率大带宽光电探测器，对ROF系统产业化应用具有重要意义。In view of this, designing a high-power and wide-bandwidth photodetector that can not only increase the output power, but also improve the working bandwidth is of great significance to the industrial application of ROF systems.
发明内容Contents of the invention
本发明所要解决的技术问题是提供一种不仅可以提高输出功率，同时也能提高工作带宽的高功率大带宽光电探测器。The technical problem to be solved by the present invention is to provide a high-power and large-bandwidth photodetector that can not only increase the output power, but also improve the working bandwidth.
本发明解决上述技术问题所采用的技术方案为：一种高功率大带宽光电探测器，包括匹配电阻和N个光电探测单元，其中，N为大于等于2的整数，所述的光电探测单元包括第一电感、第二电感、电容和光电二极管，所述的第一电感的一端为所述的光电探测单元的输入端，所述的第一电感的另一端、所述的电容的一端和所述的第二电感的一端连接，所述的电容的另一端和所述的光电二极管的阳极连接，所述的光电二极管的阴极接地，所述的第二电感的另一端为所述的光电探测单元的输出端；所述的匹配电阻的一端接地，所述的匹配电阻的另一端和所述的第1个光电探测单元的输入端连接，所述的第K个光电探测单元的输出端和所述的第K+1个光电探测单元的输入端连接，K＝1,2，……，N-1，所述的第N个光电探测单元的输出端为所述的高功率大带宽光电探测器的输出端；所述的第一电感的电感和所述的第二电感的电感相等，L表示第一电感的电感或者所述的第二电感的电感，Zα表示光电探测单元的特征阻抗，Zα＝50Ω，Cd表示光电二极管的结电容，Cc表示电容的电容量。The technical solution adopted by the present invention to solve the above technical problems is: a high-power and large-bandwidth photodetector, including matching resistors and N photodetection units, wherein N is an integer greater than or equal to 2, and the photodetection units include First inductance, second inductance, capacitor and photodiode, one end of the first inductance is the input end of the photodetection unit, the other end of the first inductance, one end of the capacitor and the One end of the second inductor is connected, the other end of the capacitor is connected to the anode of the photodiode, the cathode of the photodiode is grounded, and the other end of the second inductor is the photodetector The output terminal of the unit; one end of the matching resistor is grounded, the other end of the matching resistor is connected to the input terminal of the first photodetection unit, and the output terminal of the K photodetection unit is connected to The input end of the K+1th photoelectric detection unit is connected, K=1, 2, ..., N-1, and the output end of the Nth photoelectric detection unit is the high-power and large-bandwidth photoelectric The output terminal of the detector; the inductance of the first inductance is equal to the inductance of the second inductance, L represents the inductance of the first inductor or the inductance of the second inductor, Z α represents the characteristic impedance of the photodetection unit, Z α =50Ω, C d represents the junction capacitance of the photodiode, and C c represents the capacitance of the capacitor.
所述的光电探测单元的数量为4个，所述的光电二极管的结电容Cd＝0.2pF，所述的电容的电容量Cc＝0.2pF。The number of the photodetection units is 4, the junction capacitance C d of the photodiode is 0.2pF, and the capacitance C c of the capacitance is 0.2pF.
与现有技术相比，本发明的优点在于通过N个光电探测单元依次连接，每个光电探测单元包括第一电感、第二电感、电容和光电二极管，L表示第一电感的电感或者所述的第二电感的电感，Cd表示光电二极管的结电容，在光电探测器工作过程中，其输出端的电流等于其内部各个T型光电探测单元输出电流之和，由此实现光电探测器内各个光电探测单元的功率合成，光电探测器的截止频率Cc表示电容的电容量，而相同条件下传统的光电探测器的截止频率本发明光电探测器的截止频率为传统的光电探测器的截止频率的倍，即本发明光电探测器的带宽相对于现有技术提高了倍，由此本发明的高功率大带宽光电探测器不仅可以提高输出功率，同时也能提高工作带宽。Compared with the prior art, the present invention has the advantage that N photodetection units are sequentially connected, and each photodetection unit includes a first inductance, a second inductance, a capacitor and a photodiode, and L represents the inductance of the first inductance or the The inductance of the second inductance, C d represents the junction capacitance of the photodiode. During the working process of the photodetector, the current at the output terminal is equal to the sum of the output currents of each T-shaped photodetection unit inside it, thus realizing each in the photodetector. Power combination of photodetection unit, cut-off frequency of photodetector C c represents the capacitance of the capacitor, and the cutoff frequency of the traditional photodetector under the same conditions The cut-off frequency of the photodetector of the present invention is the cut-off frequency of traditional photodetector times, that is, the bandwidth of the photodetector of the present invention has improved compared to the prior art times, thus the high-power and wide-bandwidth photodetector of the present invention can not only increase the output power, but also improve the working bandwidth.
附图说明Description of drawings
图1(a)为本发明的光电探测器的电路图；Fig. 1 (a) is the circuit diagram of photodetector of the present invention;
图1(b)为本发明的光电探测器中单个光电探测单元的电路图；Fig. 1 (b) is the circuit diagram of single photodetection unit in the photodetector of the present invention;
图2(a)为本发明实施例的光电探测器的输出电流仿真图；Fig. 2 (a) is the simulation diagram of the output current of the photodetector of the embodiment of the present invention;
图2(b)为传统的光电探测器的输出电流仿真图；Fig. 2 (b) is the output current simulation figure of traditional photodetector;
图2(c)为现有技术中采用电感元件来级联四个光电二极管的光电探测器的输出电流仿真图；Fig. 2 (c) is the simulation diagram of the output current of the photodetector which adopts the inductance element to cascade four photodiodes in the prior art;
图3(a)为本发明实施例的光电探测器的工作频率仿真图；Fig. 3 (a) is the operating frequency simulation diagram of the photodetector of the embodiment of the present invention;
图3(b)为传统的光电探测器的工作频率仿真图；Fig. 3 (b) is the operating frequency simulation figure of traditional photodetector;
图3(c)为现有技术中现有技术中采用电感元件来级联四个光电二极管的光电探测器的工作频率仿真图；Fig. 3 (c) is the operating frequency simulation figure of the photodetector that adopts inductive element to cascade four photodiodes in the prior art;
图4(a)为本发明的光电探测器包括8个光电探测单元时的输出电流仿真图；Fig. 4 (a) is the output current emulation diagram when the photodetector of the present invention includes 8 photodetection units;
图4(b)为本发明的光电探测器包括8个光电探测单元时的工作频率仿真图。Fig. 4(b) is a simulation diagram of the operating frequency when the photodetector of the present invention includes 8 photodetection units.
具体实施方式detailed description
以下结合附图实施例对本发明作进一步详细描述。The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.
实施例：如图1(a)和图1(b)所示，一种高功率大带宽光电探测器，包括匹配电阻R1和N个光电探测单元T，其中，N为大于等于2的整数，光电探测单元T包括第一电感L1、第二电感L2、电容C1和光电二极管D1，第一电感L1的一端为光电探测单元T的输入端，第一电感L1的另一端、电容C1的一端和第二电感L2的一端连接，电容C1的另一端和光电二极管D1的阳极连接，光电二极管D1的阴极接地，第二电感L2的另一端为光电探测单元T的输出端；匹配电阻R1的一端接地，匹配电阻R1的另一端和第1个光电探测单元T的输入端连接，第K个光电探测单元T的输出端和第K+1个光电探测单元T的输入端连接，K＝1,2，……，N-1，第N个光电探测单元T的输出端为高功率大带宽光电探测器的输出端；第一电感L1的电感和第二电感L2的电感相等，L表示第一电感L1的电感或者第二电感L2的电感，Zα表示光电探测单元T的特征阻抗，Zα＝50Ω，Cd表示光电二极管D1的结电容，Cc表示电容C1的电容量。Embodiment: as shown in Fig. 1 (a) and Fig. 1 (b), a kind of high-power large-bandwidth photodetector comprises matching resistance R1 and N photodetection units T, wherein, N is the integer greater than or equal to 2, The photodetection unit T includes a first inductance L1, a second inductance L2, a capacitor C1 and a photodiode D1, one end of the first inductance L1 is the input end of the photodetection unit T, the other end of the first inductance L1, one end of the capacitor C1 and One end of the second inductance L2 is connected, the other end of the capacitor C1 is connected to the anode of the photodiode D1, the cathode of the photodiode D1 is grounded, the other end of the second inductance L2 is the output end of the photodetection unit T; one end of the matching resistor R1 is grounded , the other end of the matching resistor R1 is connected to the input end of the first photodetection unit T, and the output end of the Kth photodetection unit T is connected to the input end of the K+1th photodetection unit T, K=1,2 ,..., N-1, the output end of the Nth photodetection unit T is the output end of the high-power and wide-bandwidth photodetector; the inductance of the first inductance L1 is equal to the inductance of the second inductance L2, L represents the inductance of the first inductor L1 or the inductance of the second inductor L2, Z α represents the characteristic impedance of the photodetection unit T, Z α =50Ω, C d represents the junction capacitance of the photodiode D1, and C c represents the capacitance of the capacitor C1 .
现有的光电二极管的结电容通常为0.15-0.2pF，本实施例中，光电二极管D1的结电容Cd＝0.2pF，电容C1的电容量Cc＝0.2pF，光电探测单元T的数量为4个。根据公式计算得到第一电感L1的电感以及第二电感L2的电感L＝250pH。The junction capacitance of the existing photodiode is usually 0.15-0.2pF. In this embodiment, the junction capacitance C d of the photodiode D1=0.2pF, the capacitance Cc =0.2pF of the capacitor C1, and the number of photodetection units T is 4. According to the formula The inductance of the first inductor L1 and the inductance L of the second inductor L2 are calculated to be 250pH.
本实施例的光电探测器的截止频率将代入后得到相同条件下传统的光电探测器(光电二极管)的截止频率本实施例的光电探测器的带宽相对于传统的光电探测器，其带宽提高为倍。光电探测器输出端的电流等于其内部各个T型光电探测单元输出电流之和，光电探测器内各个光电探测单元的功率得到合成。The cut-off frequency of the photodetector of this embodiment Will after substitution The cut-off frequency of a conventional photodetector (photodiode) under the same conditions Compared with traditional photodetectors, the bandwidth of the photodetector of the present embodiment is improved by times. The current at the output end of the photodetector is equal to the sum of the output currents of each T-shaped photodetection unit inside the photodetector, and the power of each photodetection unit in the photodetector is synthesized.
在相同条件下，对本实施例的光电探测器、传统的光电探测器(即光电二极管)和现有技术中采用电感元件来级联四个光电二极管的光电探测器在相同的条件下分别进行输出电流和带宽仿真。本发明实施例的光电探测器、传统的光电探测器和现有技术中采用电感元件来级联四个光电二极管的光电探测器的输出电流仿真图如图2(a)～图2(c)所示，本发明实施例的光电探测器、传统的光电探测器和现有技术中采用电感元件来级联四个光电二极管的光电探测器的工作频率仿真图如图3(a)～图3(c)所示。分析图2(a)～图2(c)可知，本实施例的光电探测器的输出电流为100mA，传统的光电探测器的输出电流为50mA，现有技术中采用电感元件来级联四个光电二极管的光电探测器的输出电流为200mA，本实施例的光电探测器的输出电流是传统的光电探测器的两倍，是现有技术中采用电感元件来级联四个光电二极管的光电探测器的一半，即本实施例的光电探测器相对于传统的光电探测器功率提升了，相对于现有技术中采用电感元件来级联四个光电二极管的光电探测器功率有所损耗。分析图3(a)～图3(c)可知，本实施例的光电探测器的工作带宽(-3dB带宽)为63G，传统的光电探测器和现有技术中采用电感元件来级联四个光电二极管的光电探测器的工作带宽(-3dB带宽)均为31G，本实施例的光电探测器的工作带宽是传统的光电探测器和现有技术中采用电感元件来级联四个光电二极管的光电探测器的工作带宽的两倍。由以上分析可知，本实施例的光电探测器相对于现有技术中采用电感元件来级联四个光电二极管的光电探测器，损耗了部分功率，带宽得到了提高。但是，本实施例的光电探测器相对于现有技术中采用电感元件来级联四个光电二极管的光电探测器的功率损耗可以通过增加光电探测单元的数目来克服。当本发明的光电探测器包括8个光电探测单元时，其输出电流仿真图如图4(a)所示，工作频率仿真图如图4(b)所示。分析图4(a)可知，此时本发明的光电探测器的输出电流幅值达到了200mA，即与现有技术中采用电感元件来级联四个光电二极管的光电探测器输出功率相同；分析图4(b)可知，此时本发明的光电探测器的工作带宽(-3dB带宽)为63G，为现有技术中采用电感元件来级联四个光电二极管的光电探测器工作带宽的两倍。由此本发明的光电探测器通过调整光电探测单元的数量既可以实现高功率也可以得到大带宽，可以同时具备高功率与大带宽。Under the same conditions, the photodetectors of the present embodiment, the traditional photodetectors (i.e. photodiodes) and the photodetectors using inductive elements to cascade four photodiodes in the prior art are output respectively under the same conditions Current and bandwidth simulation. The output current simulation diagrams of photodetectors in the embodiment of the present invention, traditional photodetectors, and photodetectors using inductive elements to cascade four photodiodes in the prior art are shown in Figure 2(a) to Figure 2(c) As shown, the photodetectors of the embodiment of the present invention, the traditional photodetectors and the photodetectors in the prior art that use inductive elements to cascade four photodiodes are the operating frequency simulation diagrams as shown in Figure 3 (a) to Figure 3 (c) shown. Analysis of Fig. 2(a) to Fig. 2(c) shows that the output current of the photodetector of this embodiment is 100mA, and the output current of the traditional photodetector is 50mA. In the prior art, inductive elements are used to cascade four The output current of the photodetector of the photodiode is 200mA, and the output current of the photodetector of the present embodiment is twice that of the traditional photodetector, which is the photodetection of four photodiodes cascaded using inductive elements in the prior art. In other words, the power of the photodetector in this embodiment is improved compared with the conventional photodetector, and the power of the photodetector using inductive elements to cascade four photodiodes in the prior art is somewhat lost. Analysis of Fig. 3(a) to Fig. 3(c) shows that the working bandwidth (-3dB bandwidth) of the photodetector of this embodiment is 63G, and the traditional photodetector and the prior art use inductive elements to cascade four The working bandwidth (-3dB bandwidth) of the photodetector of photodiode is 31G, and the working bandwidth of the photodetector of the present embodiment is traditional photodetector and adopts inductive element to cascade four photodiodes in the prior art Twice the operating bandwidth of the photodetector. From the above analysis, it can be seen that, compared with the photodetector in the prior art that adopts inductive elements to cascade four photodiodes, the photodetector of this embodiment loses part of the power and improves the bandwidth. However, the power loss of the photodetector in this embodiment can be overcome by increasing the number of photodetection units compared to the photodetector in the prior art that adopts an inductance element to cascade four photodiodes. When the photodetector of the present invention includes 8 photodetection units, its output current simulation diagram is shown in Figure 4(a), and its operating frequency simulation diagram is shown in Figure 4(b). Analysis of Fig. 4 (a) shows that the output current amplitude of the photodetector of the present invention has reached 200mA at this time, which is the same as the photodetector output power of cascading four photodiodes using inductive elements in the prior art; analysis As can be seen from Fig. 4 (b), at this moment, the operating bandwidth (-3dB bandwidth) of the photodetector of the present invention is 63G, which is twice the operating bandwidth of the photodetector using inductive elements to cascade four photodiodes in the prior art . Therefore, the photodetector of the present invention can realize both high power and large bandwidth by adjusting the number of photodetection units, and can have high power and large bandwidth at the same time.
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