CN104810468B - 一种双轴织构高温超导缓冲层的制备方法 - Google Patents
一种双轴织构高温超导缓冲层的制备方法 Download PDFInfo
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- CN104810468B CN104810468B CN201510206017.7A CN201510206017A CN104810468B CN 104810468 B CN104810468 B CN 104810468B CN 201510206017 A CN201510206017 A CN 201510206017A CN 104810468 B CN104810468 B CN 104810468B
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- temperature superconductor
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- 239000002887 superconductor Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000010884 ion-beam technique Methods 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 22
- 230000008021 deposition Effects 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 11
- 239000002184 metal Substances 0.000 claims description 11
- 239000010409 thin film Substances 0.000 claims description 7
- 230000004888 barrier function Effects 0.000 claims description 5
- 239000010410 layer Substances 0.000 abstract 5
- 239000002346 layers by function Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 28
- 150000002500 ions Chemical class 0.000 description 19
- 238000000151 deposition Methods 0.000 description 18
- 238000007735 ion beam assisted deposition Methods 0.000 description 17
- 230000006378 damage Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- 230000003902 lesion Effects 0.000 description 3
- 238000004062 sedimentation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001339 C alloy Inorganic materials 0.000 description 2
- WAIPAZQMEIHHTJ-UHFFFAOYSA-N [Cr].[Co] Chemical compound [Cr].[Co] WAIPAZQMEIHHTJ-UHFFFAOYSA-N 0.000 description 2
- JSFIBOIAGUDAGF-UHFFFAOYSA-N aluminum iridium(3+) oxygen(2-) Chemical compound [O-2].[Al+3].[Ir+3].[O-2].[O-2] JSFIBOIAGUDAGF-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910001423 beryllium ion Inorganic materials 0.000 description 2
- 230000005465 channeling Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- -1 rare-earth barium copper oxides Chemical class 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- NWABYTQGWGJUFJ-UHFFFAOYSA-N 11-[2-[4-[4-[bis(2-methylpropyl)amino]butyl]phenyl]acetyl]-5h-benzo[b][1,4]benzodiazepin-6-one Chemical compound C1=CC(CCCCN(CC(C)C)CC(C)C)=CC=C1CC(=O)N1C2=CC=CC=C2C(=O)NC2=CC=CC=C21 NWABYTQGWGJUFJ-UHFFFAOYSA-N 0.000 description 1
- 229910002328 LaMnO3 Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
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- 230000009977 dual effect Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
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- 238000007737 ion beam deposition Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 1
- 238000002128 reflection high energy electron diffraction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
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CN201510206017.7A CN104810468B (zh) | 2015-04-28 | 2015-04-28 | 一种双轴织构高温超导缓冲层的制备方法 |
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CN104810468A CN104810468A (zh) | 2015-07-29 |
CN104810468B true CN104810468B (zh) | 2017-10-13 |
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CN111334760A (zh) * | 2020-03-19 | 2020-06-26 | 电子科技大学 | 一种多晶或非晶基底上制备原子层热电堆薄膜的方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US6899928B1 (en) * | 2002-07-29 | 2005-05-31 | The Regents Of The University Of California | Dual ion beam assisted deposition of biaxially textured template layers |
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AUPR515301A0 (en) * | 2001-05-22 | 2001-06-14 | Commonwealth Scientific And Industrial Research Organisation | Process and apparatus for producing crystalline thin film buffer layers and structures having biaxial texture |
US6809066B2 (en) * | 2001-07-30 | 2004-10-26 | The Regents Of The University Of California | Ion texturing methods and articles |
US7718574B2 (en) * | 2004-04-08 | 2010-05-18 | Superpower, Inc. | Biaxially-textured film deposition for superconductor coated tapes |
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US6899928B1 (en) * | 2002-07-29 | 2005-05-31 | The Regents Of The University Of California | Dual ion beam assisted deposition of biaxially textured template layers |
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Effective date of registration: 20180309 Address after: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215125 No. 218 BioBAY C18 Co-patentee after: Eastern superconducting technology (Suzhou) Co., Ltd. Patentee after: Suzhou Advanced Materials Research Istitute Co., Ltd. Co-patentee after: Jiangsu Etern Co., Ltd. Address before: Xinghu Street Industrial Park of Suzhou city in Jiangsu province 215125 No. 218 BioBAY C18 Patentee before: Suzhou Advanced Materials Research Istitute Co., Ltd. |
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