CN104807578A - Strain type torque sensor based on frequency conversion - Google Patents
Strain type torque sensor based on frequency conversion Download PDFInfo
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- CN104807578A CN104807578A CN201510202618.0A CN201510202618A CN104807578A CN 104807578 A CN104807578 A CN 104807578A CN 201510202618 A CN201510202618 A CN 201510202618A CN 104807578 A CN104807578 A CN 104807578A
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Abstract
The invention discloses a strain type torque sensor based on frequency conversion. The strain type torque sensor is mainly composed of a torsion shaft (1), a display instrument (6), a signal phase locking processing system (5) connected with the display instrument (6), a current collection ring (3) arranged on the torsion shaft (1), a strain gauge (2) pasted on the torsion shaft (1) and connected with the current collection ring (3), and an oscillator (4) connected with the current collection ring (3). The strain type torque sensor is characterized in that a frequency conversion module (7) is arranged between the current collection ring (3) and the signal phase locking processing system (5). By means of the strain type torque sensor, the signal frequency can be converted, signals high in fluctuation are restrained within a certain frequency range, and therefore the measurement accuracy of the strain type torque sensor can be improved.
Description
Technical field
The present invention relates to a kind of sensor, specifically refer to a kind of strain-type torque sensor based on frequency inverted.
Background technology
Along with the fast development of modern science and technology, torque measurement techniques has become the new branch of measuring technology.The application of torque measurement is more and more extensive, arrive greatly aircraft, as oceangoing ship, drilling well, generating set and metallurgical and mining equipment etc., littlely arrive micromotor, household electrical appliance and clock and watch etc.Torque measurement is the requisite contents such as various mechanical new product development, quality inspection, optimal control, monitoring of working condition and fault diagnosis.Torque measurement accurately to shorten modern machinery and equipment lead time, improve equipment performance, reduce development cost there is important effect.
Along with the significantly lifting of economic strength and technology injustice, the equipment and technology in civilian and national defence is more and more advanced, and this is then higher to the requirement of strain-type torque sensor.Equipment under test can change moment of torsion output according to different operating modes at work, in this case, its signal frequency of torque signal that traditional strain-type torque sensor collects has very large fluctuation, this just brings greater impact to torque signal process, thus reduces the measuring accuracy of strain-type torque sensor.Therefore, how solving the large problem of torque signal frequency jitter is then the current task of top priority.
Summary of the invention
The object of the invention is to overcome the low defect of traditional its torque measurement precision of strain-type torque sensor, a kind of strain-type torque sensor based on frequency inverted is provided.
Object of the present invention is achieved through the following technical solutions: a kind of strain-type torque sensor based on frequency inverted, primarily of torsion shaft, display instrument, the signal locking disposal system be connected with display instrument, be arranged on the collector ring in torsion shaft, be pasted onto the foil gauge be connected in torsion shaft and with collector ring, and the oscillator to be connected with collector ring, between collector ring and signal locking disposal system, be also provided with frequency translation module, described frequency translation module is by process chip U1, triode VT7, triode VT8, N pole is connected with the emitter of triode VT7 after resistance R18, P pole is then in turn through inductance L 5, resistance R13, the diode D7 be connected with the base stage of triode VT7 after resistance R14 and diode D8, positive pole is connected with the LBD pin of process chip U1, the polar capacitor C6 that negative pole is then connected with the tie point of resistance R14 with diode D8, positive pole is connected with the CX pin of process chip U1, the polar capacitor C7 that negative pole is connected with the negative pole of polar capacitor C6, one end is connected with the N pole of diode D7, the resistance R16 that the other end is then connected with the negative pole of polar capacitor C7 after resistance R15, one end is connected with the VFB pin of process chip U1, the resistance R17 that the other end is then connected with the base stage of triode VT7, positive pole is connected with the emitter of triode VT8, the polar capacitor C9 of minus earth, one end is connected with the emitter of triode VT7, the resistance R19 that the other end is then connected with the negative pole of polar capacitor C9 after resistance R20, and form with the polar capacitor C8 that resistance R19 is in parallel, the LX pin of described process chip U1 is connected with the P pole of diode D7, its LBR pin is all connected with the N pole of diode D7 with IC pin as the input end of circuit, GND pin ground connection, VS pin together with the tie point of resistance R13 with inductance L 5, the base stage of described triode VT8 is connected with the tie point of resistance R20 with resistance R19, its emitter is then connected with the collector of triode VT7, collector is then connected with the N pole of diode D7.
Further, described signal locking disposal system is by front end input circuit, and the phase lock circuitry be connected with front end input circuit, the signal amplification circuit be connected with phase lock circuitry, the change-over circuit be connected with signal amplification circuit forms.
Described front end input circuit comprises resistance R1, resistance R2, inductance L 1, inductance L 2, diode D1, diode D2, diode D3 and electric capacity C1, the P pole ground connection of described diode D1, N pole is then connected with the N pole of diode D2 after polar capacitor C1, one end of resistance R1 is connected with the N pole of diode D1, the other end is then as an input pole of circuit, one end of resistance R2 is connected with the N pole of diode D1, the other end is then connected with phase lock circuitry, one end of inductance L 2 is connected with the N pole of diode D1 after resistance R2, the other end is then connected with the p pole of diode D2, the N pole of described diode D2 after inductance L 1 as another input pole of circuit, P pole is connected with phase lock circuitry, the N pole of diode D3 is connected with the P pole of diode D2, ground connection while P pole is then connected with phase lock circuitry.
Described phase lock circuitry is by field effect transistor Q1, triode VT1, triode VT2, the polar capacitor C2 that positive pole is connected with the emitter of triode VT1 after resistance R3, negative pole is then connected with the base stage of triode VT1, the resistance R4 that one end is connected with the collector of triode VT1, the other end is connected with the collector of triode VT2 after inductance L 4, the resistance R6 that one end is connected with the base stage of triode VT2, the other end is connected with signal amplification circuit, and one end is connected with the base stage of triode VT2 after inductance L 3, the resistance R5 of other end ground connection forms; The grid of described field effect transistor Q1 is connected with the N pole of diode D3, source electrode is connected with the base stage of triode VT2, it drains and be then connected with the collector of triode VT1, the collector of described triode VT1 is connected with the tie point of inductance L 2 with resistance R2, its base stage is then connected with signal amplification circuit, and the collector of described triode VT2 is respectively with the P pole of diode D3 and signal amplification circuit is connected, its grounded emitter.
Described signal amplification circuit is by amplifier P1, triode VT3, triode VT4, positive pole is connected with the base stage of triode VT1 after resistance R7, the polar capacitor C4 that negative pole is then connected with the positive pole of amplifier P1, positive pole is connected with the negative pole of amplifier P1 after resistance R8, the polar capacitor C3 that negative pole is then connected with the base stage of triode VT2 after resistance R6, positive pole is connected with the negative pole of polar capacitor C3, the electrode capacitance C5 that negative pole is connected with change-over circuit, one end is connected with the emitter of triode VT4, the resistance R9 that the other end is connected with the negative pole of amplifier P1, one end is connected with the base stage of triode VT4, the resistance R10 that the other end is connected with the base stage of triode VT1, and N pole is connected with the base stage of triode VT1, the voltage stabilizing diode D4 of P pole ground connection forms, the base stage of described triode VT3 is connected with the collector of triode VT2, its emitter is connected with the negative pole of polar capacitor C3, collector is connected with the base stage of triode VT1, and the collector of described triode VT4 is connected with change-over circuit respectively with the output terminal of amplifier P1.
Described change-over circuit is by conversion chip U, field effect transistor Q2, triode VT5, triode VT6, rejection gate A, the diode D5 that the negative pole of P pole AND OR NOT gate A is connected, N pole is connected with the IN+ pin of conversion chip U, the diode D6 that N pole is connected with the drain electrode of field effect transistor Q2, P pole is then connected with the OUT pin of conversion chip U after resistance R12, the resistance R11 that one end is connected with the base stage of triode VT5, the other end is then connected with the source electrode of field effect transistor Q2 forms, the positive pole of described rejection gate A is connected with the collector of triode VT4, output terminal is then connected with the emitter of triode VT5, the IN+ pin of described conversion chip U is connected with the output terminal of amplifier P1, its IN-pin is then connected with the negative pole of polar capacitor C5, GND pin ground connection, OUT pin is also connected with the grid of field effect transistor Q2, VCC pin connects 15V voltage, the output terminal of the base stage AND OR NOT gate A of described triode VT5 is connected, collector is connected with the base stage of triode VT6, the collector of triode VT6 is connected with the emitter of triode VT5, its emitter is then connected with the P pole of diode D6.
Described conversion chip U is LM393 type integrated chip, and process chip U1 is MAX630 integrated chip.
The present invention comparatively prior art compares, and has the following advantages and beneficial effect:
(1) the present invention can change signal frequency, signal suppressing large for fluctuation in certain frequency range, thus can improve the measuring accuracy of strain-type torque sensor.
(2) structure of the present invention is simple, easy and simple to handle, is suitable for promoting.
Accompanying drawing explanation
Fig. 1 is one-piece construction schematic diagram of the present invention;
Fig. 2 is signal locking disposal system electrical block diagram of the present invention;
Fig. 3 is frequency translation module structural representation of the present invention.
Reference numeral name in above accompanying drawing is called:
1-torsion shaft, 2-foil gauge, 3-collector ring, 4-oscillator, 5-signal locking disposal system, 6-display instrument, 7-frequency translation module, 51-front end input circuit, 52-phase lock circuitry, 53-signal amplification circuit, 54-change-over circuit.
Embodiment
Below in conjunction with embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
Embodiment
As shown in Figure 1, the present invention is primarily of to be arranged in equipment under test rotating shaft and as the torsion shaft 1 of electro-mechanical conversion element, display instrument 6, the signal locking disposal system 5 be connected with display instrument 6, be arranged on the collector ring 3 in torsion shaft 1, be pasted onto the foil gauge 2 be connected in torsion shaft 1 and with collector ring 3, the oscillator 4 be connected with collector ring 3; In order to realize object of the present invention, the present invention is also provided with frequency translation module 7 between collector ring 3 and signal locking disposal system 5.
When equipment under test rotates, torsion shaft 1 is driven, then measures the torque signal of torsion shaft 1 by the distortion of foil gauge 2, and signal is flowed to collector ring 3.The effect of collector ring 3 is drawn from the torsion shaft 1 be rotating by the lead-in wire of foil gauge 2, and the torque signal that namely foil gauge 2 collects is transferred to oscillator 4 and frequency translation module 7 by collector ring 3; Display instrument 6 is for showing the torque value of equipment under test.And signal locking disposal system 5 is for carrying out Phase Processing to torque signal, frequency translation module 7 then for changing the frequency of torque signal, makes signal frequency more stable.
Wherein, display instrument 6, torsion shaft 1, foil gauge 2, collector ring 3 and oscillator 4 all adopt existing technology to realize.
As shown in Figure 2, this signal locking disposal system 5 is by front end input circuit 51, and the phase lock circuitry 52 be connected with front end input circuit 51, the signal amplification circuit 53 be connected with phase lock circuitry 52, the change-over circuit 54 be connected with signal amplification circuit 53 forms.
Described front end input circuit 51 comprises resistance R1, resistance R2, inductance L 1, inductance L 2, diode D1, diode D2, diode D3 and electric capacity C1.During connection, the P pole ground connection of described diode D1, N pole is then connected with the N pole of diode D2 after polar capacitor C1, one end of resistance R1 is connected with the N pole of diode D1, the other end is then as an input pole of circuit, one end of resistance R2 is connected with the N pole of diode D1, the other end is then connected with phase lock circuitry 52, one end of inductance L 2 is connected with the N pole of diode D1 after resistance R2, the other end is then connected with the p pole of diode D2, the N pole of described diode D2 after inductance L 1 as another input pole of circuit, P pole is connected with phase lock circuitry 52, the N pole of diode D3 is connected with the P pole of diode D2, ground connection while P pole is then connected with phase lock circuitry 52.
Phase lock circuitry 52 can carry out Phase Processing to torque signal, phase place after process is more stable, it is by field effect transistor Q1, triode VT1, triode VT2, positive pole is connected with the emitter of triode VT1 after resistance R3, the polar capacitor C2 that negative pole is then connected with the base stage of triode VT1, one end is connected with the collector of triode VT1, the resistance R4 that the other end is connected with the collector of triode VT2 after inductance L 4, one end is connected with the base stage of triode VT2, the resistance R6 that the other end is connected with signal amplification circuit 53, and one end is connected with the base stage of triode VT2 after inductance L 3, the resistance R5 of other end ground connection forms.The grid of described field effect transistor Q1 is connected with the N pole of diode D3, source electrode is connected with the base stage of triode VT2, it drains and be then connected with the collector of triode VT1, the collector of described triode VT1 is connected with the tie point of inductance L 2 with resistance R2, its base stage is then connected with signal amplification circuit 53, and the collector of described triode VT2 is respectively with the P pole of diode D3 and signal amplification circuit 53 is connected, its grounded emitter.
Signal amplification circuit 53 is by amplifier P1, triode VT3, triode VT4, positive pole is connected with the base stage of triode VT1 after resistance R7, the polar capacitor C4 that negative pole is then connected with the positive pole of amplifier P1, positive pole is connected with the negative pole of amplifier P1 after resistance R8, the polar capacitor C3 that negative pole is then connected with the base stage of triode VT2 after resistance R6, positive pole is connected with the negative pole of polar capacitor C3, the electrode capacitance C5 that negative pole is connected with change-over circuit 54, one end is connected with the emitter of triode VT4, the resistance R9 that the other end is connected with the negative pole of amplifier P1, one end is connected with the base stage of triode VT4, the resistance R10 that the other end is connected with the base stage of triode VT1, and N pole is connected with the base stage of triode VT1, the voltage stabilizing diode D4 of P pole ground connection forms.The base stage of described triode VT3 is connected with the collector of triode VT2, its emitter is connected with the negative pole of polar capacitor C3, collector is connected with the base stage of triode VT1, and the collector of described triode VT4 is connected with change-over circuit 54 respectively with the output terminal of amplifier P1.
Described change-over circuit 54 is by conversion chip U, field effect transistor Q2, triode VT5, triode VT6, rejection gate A, the diode D5 that the negative pole of P pole AND OR NOT gate A is connected, N pole is connected with the IN+ pin of conversion chip U, the diode D6 that N pole is connected with the drain electrode of field effect transistor Q2, P pole is then connected with the OUT pin of conversion chip U after resistance R12, the resistance R11 that one end is connected with the base stage of triode VT5, the other end is then connected with the source electrode of field effect transistor Q2 forms.The positive pole of described rejection gate A is connected with the collector of triode VT4, output terminal is then connected with the emitter of triode VT5, the IN+ pin of described conversion chip U is connected with the output terminal of amplifier P1, its IN-pin is then connected with the negative pole of polar capacitor C5, GND pin ground connection, OUT pin is also connected with the grid of field effect transistor Q2, VCC pin connects 15V voltage, the output terminal of the base stage AND OR NOT gate A of described triode VT5 is connected, collector is connected with the base stage of triode VT6, the collector of triode VT6 is connected with the emitter of triode VT5, its emitter is then connected with the P pole of diode D6.In order to better implement the present invention, described conversion chip U is preferably LM393 type integrated chip and realizes.
Frequency translation module 7 is inventive point place of the present invention, as shown in Figure 3, its process chip U1, triode VT7, triode VT8, N pole is connected with the emitter of triode VT7 after resistance R18, P pole is then in turn through inductance L 5, resistance R13, the diode D7 be connected with the base stage of triode VT7 after resistance R14 and diode D8, positive pole is connected with the LBD pin of process chip U1, the polar capacitor C6 that negative pole is then connected with the tie point of resistance R14 with diode D8, positive pole is connected with the CX pin of process chip U1, the polar capacitor C7 that negative pole is connected with the negative pole of polar capacitor C6, one end is connected with the N pole of diode D7, the resistance R16 that the other end is then connected with the negative pole of polar capacitor C7 after resistance R15, one end is connected with the VFB pin of process chip U1, the resistance R17 that the other end is then connected with the base stage of triode VT7, positive pole is connected with the emitter of triode VT8, the polar capacitor C9 of minus earth, one end is connected with the emitter of triode VT7, the resistance R19 that the other end is then connected with the negative pole of polar capacitor C9 after resistance R20, and form with the polar capacitor C8 that resistance R19 is in parallel.The LX pin of described process chip U1 is connected with the P pole of diode D7, its LBR pin is all connected with the N pole of diode D7 with IC pin as the input end of circuit, GND pin ground connection, VS pin together with the tie point of resistance R13 with inductance L 5; The base stage of described triode VT8 is connected with the tie point of resistance R20 with resistance R19, its emitter is then connected with the collector of triode VT7, collector is then connected with the N pole of diode D7.The collector and emitter of described triode VT8 is together as the output terminal of circuit.In order to better implement the present invention, described process chip U1 is preferably MAX630 integrated chip to realize.
As mentioned above, just well the present invention can be realized.
Claims (8)
1. the strain-type torque sensor based on frequency inverted, primarily of torsion shaft (1), display instrument (6), the signal locking disposal system (5) be connected with display instrument (6), be arranged on the collector ring (3) in torsion shaft (1), be pasted onto torsion shaft (1) to go up and the foil gauge (2) be connected with collector ring (3), and the oscillator (4) be connected with collector ring (3) forms, it is characterized in that: between collector ring (3) and signal locking disposal system (5), be also provided with frequency translation module (7), described frequency translation module (7) is by process chip U1, triode VT7, triode VT8, N pole is connected with the emitter of triode VT7 after resistance R18, P pole is then in turn through inductance L 5, resistance R13, the diode D7 be connected with the base stage of triode VT7 after resistance R14 and diode D8, positive pole is connected with the LBD pin of process chip U1, the polar capacitor C6 that negative pole is then connected with the tie point of resistance R14 with diode D8, positive pole is connected with the CX pin of process chip U1, the polar capacitor C7 that negative pole is connected with the negative pole of polar capacitor C6, one end is connected with the N pole of diode D7, the resistance R16 that the other end is then connected with the negative pole of polar capacitor C7 after resistance R15, one end is connected with the VFB pin of process chip U1, the resistance R17 that the other end is then connected with the base stage of triode VT7, positive pole is connected with the emitter of triode VT8, the polar capacitor C9 of minus earth, one end is connected with the emitter of triode VT7, the resistance R19 that the other end is then connected with the negative pole of polar capacitor C9 after resistance R20, and form with the polar capacitor C8 that resistance R19 is in parallel, the LX pin of described process chip U1 is connected with the P pole of diode D7, its LBR pin is all connected with the N pole of diode D7 with IC pin as the input end of circuit, GND pin ground connection, VS pin together with the tie point of resistance R13 with inductance L 5, the base stage of described triode VT8 is connected with the tie point of resistance R20 with resistance R19, its emitter is then connected with the collector of triode VT7, collector is then connected with the N pole of diode D7.
2. a kind of strain-type torque sensor based on frequency inverted according to claim 1, it is characterized in that: described signal locking disposal system (5) is by front end input circuit (51), the phase lock circuitry (52) be connected with front end input circuit (51), the signal amplification circuit (53) be connected with phase lock circuitry (52), the change-over circuit (54) be connected with signal amplification circuit (53) forms.
3. a kind of strain-type torque sensor based on frequency inverted according to claim 2, is characterized in that: described front end input circuit (51) comprises resistance R1, resistance R2, inductance L 1, inductance L 2, diode D1, diode D2, diode D3 and electric capacity C1, the P pole ground connection of described diode D1, N pole is then connected with the N pole of diode D2 after polar capacitor C1, one end of resistance R1 is connected with the N pole of diode D1, the other end is then as an input pole of circuit, one end of resistance R2 is connected with the N pole of diode D1, the other end is then connected with phase lock circuitry (52), one end of inductance L 2 is connected with the N pole of diode D1 after resistance R2, the other end is then connected with the p pole of diode D2, the N pole of described diode D2 after inductance L 1 as another input pole of circuit, P pole is connected with phase lock circuitry (52), the N pole of diode D3 is connected with the P pole of diode D2, ground connection while P pole is then connected with phase lock circuitry (52).
4. a kind of strain-type torque sensor based on frequency inverted according to claim 3, it is characterized in that: described phase lock circuitry (52) is by field effect transistor Q1, triode VT1, triode VT2, positive pole is connected with the emitter of triode VT1 after resistance R3, the polar capacitor C2 that negative pole is then connected with the base stage of triode VT1, one end is connected with the collector of triode VT1, the resistance R4 that the other end is connected with the collector of triode VT2 after inductance L 4, one end is connected with the base stage of triode VT2, the resistance R6 that the other end is connected with signal amplification circuit (53), and one end is connected with the base stage of triode VT2 after inductance L 3, the resistance R5 of other end ground connection forms, the grid of described field effect transistor Q1 is connected with the N pole of diode D3, source electrode is connected with the base stage of triode VT2, it drains and be then connected with the collector of triode VT1, the collector of described triode VT1 is connected with the tie point of inductance L 2 with resistance R2, its base stage is then connected with signal amplification circuit (53), and the collector of described triode VT2 is respectively with the P pole of diode D3 and signal amplification circuit (53) is connected, its grounded emitter.
5. a kind of strain-type torque sensor based on frequency inverted according to claim 4, it is characterized in that: described signal amplification circuit (53) is by amplifier P1, triode VT3, triode VT4, positive pole is connected with the base stage of triode VT1 after resistance R7, the polar capacitor C4 that negative pole is then connected with the positive pole of amplifier P1, positive pole is connected with the negative pole of amplifier P1 after resistance R8, the polar capacitor C3 that negative pole is then connected with the base stage of triode VT2 after resistance R6, positive pole is connected with the negative pole of polar capacitor C3, the electrode capacitance C5 that negative pole is connected with change-over circuit (54), one end is connected with the emitter of triode VT4, the resistance R9 that the other end is connected with the negative pole of amplifier P1, one end is connected with the base stage of triode VT4, the resistance R10 that the other end is connected with the base stage of triode VT1, and N pole is connected with the base stage of triode VT1, the voltage stabilizing diode D4 of P pole ground connection forms, the base stage of described triode VT3 is connected with the collector of triode VT2, its emitter is connected with the negative pole of polar capacitor C3, collector is connected with the base stage of triode VT1, and the collector of described triode VT4 is connected with change-over circuit (54) respectively with the output terminal of amplifier P1.
6. a kind of strain-type torque sensor based on frequency inverted according to claim 5, it is characterized in that: described change-over circuit (54) is by conversion chip U, field effect transistor Q2, triode VT5, triode VT6, rejection gate A, the negative pole of P pole AND OR NOT gate A is connected, the diode D5 that N pole is connected with the IN+ pin of conversion chip U, N pole is connected with the drain electrode of field effect transistor Q2, the diode D6 that P pole is then connected with the OUT pin of conversion chip U after resistance R12, one end is connected with the base stage of triode VT5, the resistance R11 that the other end is then connected with the source electrode of field effect transistor Q2 forms, the positive pole of described rejection gate A is connected with the collector of triode VT4, output terminal is then connected with the emitter of triode VT5, the IN+ pin of described conversion chip U is connected with the output terminal of amplifier P1, its IN-pin is then connected with the negative pole of polar capacitor C5, GND pin ground connection, OUT pin is also connected with the grid of field effect transistor Q2, VCC pin connects 15V voltage, the output terminal of the base stage AND OR NOT gate A of described triode VT5 is connected, collector is connected with the base stage of triode VT6, the collector of triode VT6 is connected with the emitter of triode VT5, its emitter is then connected with the P pole of diode D6.
7. a kind of strain-type torque sensor based on frequency inverted according to claim 6, is characterized in that: described conversion chip U is LM393 type integrated chip.
8. a kind of strain-type torque sensor based on frequency inverted according to any one of claim 1 ~ 6, is characterized in that: described process chip U1 is MAX630 integrated chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510202618.0A CN104807578A (en) | 2015-04-25 | 2015-04-25 | Strain type torque sensor based on frequency conversion |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510202618.0A CN104807578A (en) | 2015-04-25 | 2015-04-25 | Strain type torque sensor based on frequency conversion |
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| CN113237585A (en) * | 2021-03-29 | 2021-08-10 | 湖南久钰电子有限公司 | Capacitive torque sensor and intelligent vehicle monitoring system |
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| CN104320089A (en) * | 2014-10-17 | 2015-01-28 | 绵阳雷迪创微电子科技有限公司 | Frequency converter having inhibiting function on harmonic wave |
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| CN113237585A (en) * | 2021-03-29 | 2021-08-10 | 湖南久钰电子有限公司 | Capacitive torque sensor and intelligent vehicle monitoring system |
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