CN104807555A - Junction temperature measuring method of semiconductor luminescent device - Google Patents
Junction temperature measuring method of semiconductor luminescent device Download PDFInfo
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Abstract
The invention provides a junction temperature measuring method of a semiconductor luminescent device. An intersection point of blue shift and red shift is determined, and a minimal peak wavelength lambda0 and a junction temperature T0 corresponding to the minimal peak wavelength lambda0 are obtained; and a corresponding junction temperature Tblue is obtained according to the junction temperature function of the blue shift area, and a corresponding junction temperature Tred is obtained according to the junction temperature function of the red shift area. The influence of Bluetooth shift effect is taken into consideration, practical measurement of the junction temperature is simpler and more accurate, the junction temperature function contains the component content x of a light emitting area of the device, the method can be applied to measurement of devices of different wavelengths, and the practicality is high; the coefficients of related junction temperature function are determined by measurement of devices of different wavelengths or multi-wavelength devices, the workload of measurement is reduced, the precision is improved, and errors are reduced; and the method is also high in accuracy, low in cost and high in practicality, and has great significance in the performance and service life of the semiconductor luminescent device.
Description
Technical field
The invention belongs to junction temperature measurement technical field, be specifically related to a kind of measuring method of light emitting semiconductor device junction temperature.
Background technology
The junction temperature of light emitting semiconductor device is very large on the impact of device performance, and higher junction temperature significantly can reduce luminescence efficiency and the serviceable life of device.At present, method mainly forward voltage method (Forward-voltage method) and the conventional peak wavelength method (Peak-wavelengthmethod) of light emitting semiconductor device junction temperature is used for measuring.Forward voltage method is comparatively accurate, but test process is comparatively loaded down with trivial details, and practicality is poor, because the method is not suitable for measurement (the Keng Chen for the device junction temperature encapsulated, Nadarajah Narendran, Estimating the average junction temperature of AlGaInP LED arrays by spectralanalysis.Microelectronics Reliability 53,701 – 705 (2013)).Conventional peak wavelength method practicality is stronger, but owing to being subject to the impact of device hypsochromic effect (Stark effect (Quantum-confined Stark effect) and inverse band filling process (band-filling effect) cause) and luminous zone different component content, its measuring accuracy is lower.So accurately and the junction temperature measurement method of practicality for raising photoelectric device, especially the performance of light emitting semiconductor device and the life-span significant.
What document in the past and patent related to is by calculating junction temperature to the measurement of red shift amount (junction temperature raises caused), have ignored along with electric current increases and the hypsochromic effect of generation and the impact of luminous zone different component content, be not related to and raise the efficiency and precision, by determining the research of measurement of correlation equation coefficients to multiple measurement with different wave length or multi-wavelength device yet.
Summary of the invention
The object of the present invention is to provide a kind of measuring method of light emitting semiconductor device junction temperature, the method considers the hypsochromic effect of device and the impact of luminous zone component concentration, compared with classic method, has the advantage that accuracy is high, cost is low and practical.
For achieving the above object, the technical solution used in the present invention is as follows:
A measuring method for light emitting semiconductor device junction temperature, comprises the following steps:
1) the component concentration x of the luminous zone needing the light emitting semiconductor device measured is determined;
2) spectral detector is adopted to measure light emitting semiconductor device lower than its running current with higher than the spectrum under its running current, obtain the spectrum under a series of different measuring electric current, and containing the crest blue shift of light emitting semiconductor device and the spectrum of Red Shift Phenomena in a series of spectrum obtained above, record the peak wavelength of the crest of the light emitting semiconductor device that each spectrum is corresponding respectively in a series of spectrum obtained above simultaneously;
3) according to step 2) a series of spectrum of obtaining, determine the crest blue shift of light emitting semiconductor device and the joint of Red Shift Phenomena, the peak wavelength that this joint is corresponding is the minimum peak wavelength X of this light emitting semiconductor device
0, the measurement electric current that this joint is corresponding is minimum peak wavelength electric current I
0, according to junction temperature function T
0=f (x), determines the minimum peak wavelength X of light emitting semiconductor device
0corresponding junction temperature T
0;
4) by step 2) all measurement electric currents in be less than minimum peak wavelength electric current I
0measurement electric current be designated as blue shift district electric current, be greater than minimum peak wavelength electric current I
0measurement electric current be designated as red shift district electric current; By in blue shift district electric current, any one measures electric current I
1the peak wavelength λ of the crest of corresponding light emitting semiconductor device
1substitute into blue shift district junction temperature function T
blue=f (x, λ
1-λ
0), obtain measuring electric current I
1corresponding light emitting semiconductor device junction temperature T
blue; By in red shift district electric current, any one measures electric current I
2the peak wavelength λ of the crest of corresponding light emitting semiconductor device
2substitute into red shift district junction temperature function T
red=f (x, λ
2-λ
0), obtain measuring electric current I
2corresponding light emitting semiconductor device junction temperature T
red; Namely the light emitting semiconductor device junction temperature under all measurement electric currents is obtained;
Wherein junction temperature function T
0=f (x), blue shift district junction temperature function T
blue=f (x, λ
1-λ
0) and red shift district junction temperature function T
red=f (x, λ
2-λ
0) obtained by following steps:
A) prepare some multi-wavelength devices, wherein multi-wavelength device is the device having multiple crest in spectrum, determines the component concentration x of the luminous zone corresponding to each crest of every multi-wavelength device;
Or prepare many Single wavelength devices, wherein Single wavelength device is the device only having a crest in spectrum, and the crest of all Single wavelength devices is incomplete same, determines the component concentration x of the luminous zone corresponding to crest of every Single wavelength device;
B) adopt forward voltage method, determine the junction temperature that in every multi-wavelength device, any one crest is corresponding under different measuring electric current, and record the peak wavelength in the spectrum of this crest under different measuring electric current; Measure and record the peak wavelength in every multi-wavelength device in the spectrum of all the other crests under different measuring electric current; The junction temperature that wherein the different crests of same multi-wavelength device are corresponding under same measurement electric current is equal;
Or, adopt forward voltage method, determine the junction temperature of the crest correspondence under different measuring electric current in every Single wavelength device, and record the peak wavelength in the spectrum of this crest under different measuring electric current;
C) measured under same measurement electric current to all identical crests all peak wavelengths are averaged, and the minimum value in all mean values obtained under different measuring electric current is designated as minimum peak wavelength value, measurement electric current corresponding to minimum peak wavelength value is minimum peak wavelength value electric current, crest corresponding when wherein identical crest refers to that the component concentration of luminous zone in all multi-wavelength devices or all Single wavelength devices is identical;
D) using the component concentration of luminous zone corresponding for different crest as independent variable, and using junction temperature corresponding for the minimum peak wavelength value electric current of each crest as dependent variable, obtain junction temperature function T by matching
0=f (x);
E) the measurement electric current being less than minimum peak wavelength value electric current is designated as blue shift electric current, using the peak wavelength of all crests corresponding for measurement electric current each in blue shift electric current and the difference of minimum peak wavelength value as independent variable, by the blue shift district junction temperature difference △ T under the measurement electric current of correspondence
1as dependent variable, obtain blue shift district junction temperature difference functions △ T by matching
1=f (λ
1-λ
0), thus obtain blue shift district junction temperature function; Wherein blue shift district junction temperature difference △ T
1for the absolute value of the difference of the junction temperature that measurement electric current a certain in blue shift electric current the is corresponding junction temperature corresponding with minimum peak wavelength value electric current, blue shift district junction temperature function T
blue=f (x, λ
1-λ
0)=f (x)-f (λ
1-λ
0)=T
0-△ T
1;
The measurement electric current being greater than minimum peak wavelength value electric current is designated as red shift electric current, using the peak wavelength of all crests corresponding for measurement electric current each in red shift electric current and the difference of minimum peak wavelength value as independent variable, by the red shift district junction temperature difference △ T under the measurement electric current of correspondence
2as dependent variable, obtain red shift district junction temperature difference functions △ T by matching
2=f (λ
2-λ
0), thus obtain red shift district junction temperature function; Wherein red shift district junction temperature difference △ T
2for the absolute value of the difference of the junction temperature that measurement electric current a certain in red shift electric current the is corresponding junction temperature corresponding with minimum peak wavelength value electric current, red shift district junction temperature function T
red=f (x, λ
2-λ
0)=f (x)+f (λ
2-λ
0)=T
0+ △ T
2.
When light emitting semiconductor device is InGaN/GaN LED,
Its junction temperature function T
0=ex
a+ k;
Blue shift district junction temperature function T
blue=ex
a+ k-c (λ
1-λ
0)
b;
Red shift district junction temperature function T
red=ex
a+ k+d (λ
2-λ
0)
f;
Wherein x is the component concentration of luminous zone, and a, b, c, d, e, f, k are fitting parameter.
Described step 2) in the measuring accuracy of spectral detector be≤0.1nm.
Described step 2) in when measuring the spectrum of semiconductor devices, with 0.1 ~ 10mA/mm
2current intervals measure.
Relative to prior art, beneficial effect of the present invention is as follows:
1. the measuring method of light emitting semiconductor device junction temperature provided by the invention, considers the hypsochromic effect of device and the impact of luminous zone component concentration, and compared with classic method, practicality is stronger, and precision is higher.Traditional forward voltage method needs to measure naked core, the luminescent device that namely naked core does not encapsulate, therefore poor to the junction temperature numerical precision of packaged device measurement, which has limited the practicality of the method.Traditional formula measured by peak wavelength method for be the luminous zone component of certain content, and poor to the junction temperature measurement precision of the device containing different component content with it, therefore limit the practicality of the method.And forward voltage method and traditional peak wavelength method all have ignored and increase along with electric current and the impact of hypsochromic effect that produces.And method of the present invention contains device luminous zone this variable of component concentration in the formula of junction temperature function, this can be applied to the measurement (from deep ultraviolet to infrared) of the device with different wave length, invention also contemplates that the impact of hypsochromic effect simultaneously, and can directly measure packaged luminescent device, thus the precision of measurement can be improved, there is again stronger practicality.
2. the present invention is easy and simple to handle, consuming time short.Forward voltage method measures junction temperature needs naked core to put into constant temperature oven, then adopts pulse current to measure at different temperature, measures and need a few days, complex operation.And the present invention divide into three parts the measurement of junction temperature, be first obtain minimum peak wavelength X according to the joint of blue shift and red shift
0, then obtain minimum peak wavelength X
0corresponding junction temperature T
0, be then measure blue shift district junction temperature T
bluewith red shift district junction temperature T
red, test process can the maximal value of setting measurement electric current, and minimum value and step-length, whole test process only needs about half an hour, therefore method step of the present invention is easy and simple to handle, and time cost is low.
3. measurement of the present invention is with low cost.The measurement of forward voltage method needs constant temperature oven, and this constant temperature oven can load pulses electric current, and equipment cost is higher, and the present invention only needs a spectral detector or integrating sphere equipment, and equipment cost is cheap.
Accompanying drawing explanation
Fig. 1 is the electroluminescent spectrum of the first device under different junction temperature (corresponding to different electric current).
Fig. 2 is the electroluminescent spectrum of the second device under different junction temperature (corresponding to different electric current).
Fig. 3 is minimum peak wavelength X under different I n component
0corresponding junction temperature distribution plan and matched curve.
Tu4Shi blue shift district peak wavelength shift amount (λ
1-λ
0) corresponding to junction temperature distribution plan and matched curve.
Tu5Shi red shift district peak wavelength shift amount (λ
2-λ
0) corresponding to junction temperature distribution plan and matched curve.
Embodiment
Below the present invention is described in further detail.
The measuring method of light emitting semiconductor device junction temperature provided by the invention, the impact of the hypsochromic effect produced by considering to increase along with electric current, carry out perfect to conventional peak wavelength method, and consider the impact of semiconductor devices luminous zone different component, thus compared with conventional peak wavelength method, improve measuring accuracy and efficiency, make its applicability stronger.Simultaneously for improve precision further, by there is the Single wavelength device of different wave length or the measurement of multiple multi-wavelength device to multiple, determine the coefficient of relevant junction temperature function, thus reach there is the effect that accuracy is high, cost is low and practical simultaneously.
The blue-shifted phenomenon of light emitting semiconductor device mainly Stark effect (QCSE) and inverse band filling process causes, and Red Shift Phenomena mainly owing to raising along with junction temperature, can be with caused by narrowing.In order to improve the precision of measurement, the drift of peak wavelength is divided into blue shift and red shift two parts by the present invention, contains the component x of device luminous zone in energy-conservation function simultaneously.
Because forward voltage method is the method for generally acknowledging that precision is higher at present, so the present invention is in this way as the basis that energy-conservation function is derived.The present invention can adopt the measurement of multiple different wave length device (namely having different luminous zone component concentration x) to determine the coefficient of relevant energy-conservation function.Meanwhile, light emitting semiconductor device luminous zone very thin (if the thickness of the luminous zone of light emitting diode is at about 0.2 μm), in the region that this is very thin, temperature is considered to balanced.So in order to improve measuring accuracy, the present invention also can adopt multiple measurement with multi-wavelength device to determine the coefficient of relevant energy-conservation function.Namely in order to improve precision, to multiple measurement with the device of different wave length (the component concentration x of different luminescent layer), can replace with to multiple device measurement can launching multi-wavelength simultaneously to determine the coefficient of energy-conservation function, theoretical foundation is that the temperature of luminous zone in multi-wavelength device is considered to balanced.
Not only containing device luminous zone component concentration x in energy-conservation function of the present invention, and the measurement of junction temperature be divide into three parts, is minimum peak wavelength value λ respectively
0the junction temperature function T that (flex point of blue shift and red shift) is corresponding
0=f (x), the blue shift district junction temperature function T that blue shift part is corresponding
blue=f (x, λ
1-λ
0) and red shift district junction temperature function T corresponding to red shift part
red=f (x, λ
2-λ
0).And the spectrum first by having the device of different crest (the component concentration x of different luminescent layer) to multiple (>=3) carries out measurement and matching, determine the flex point of blue shift and red shift and the junction temperature of its correspondence, then respectively matching is carried out to corresponding data, derive blue shift district junction temperature function and red shift district junction temperature function.
Junction temperature function T of the present invention
0=f (x), blue shift district junction temperature function T
blue=f (x, λ
1-λ
0) and red shift district junction temperature function T
red=f (x, λ
2-λ
0), obtain especially by following steps:
(1) prepare some multi-wavelength devices, wherein multi-wavelength device is the device having multiple crest in spectrum, determines the component concentration x of the luminous zone corresponding to each crest of every multi-wavelength device;
Or prepare the Single wavelength device of many different wave lengths, wherein Single wavelength device is the device only having a crest in spectrum, determines the component concentration x of the luminous zone corresponding to crest of every Single wavelength device;
(2) adopt forward voltage method, determine the junction temperature that in every multi-wavelength device, any one crest is corresponding under different measuring electric current, and record the peak wavelength of this crest spectrum corresponding under different measuring electric current; Measure and record the peak wavelength of the spectrum corresponding under above-mentioned different measuring electric current of all the other crests in every multi-wavelength device, the junction temperature that wherein the different crests of same multi-wavelength device are corresponding under same electric current is equal;
Or, adopt forward voltage method, determine the junction temperature of the crest correspondence under different measuring electric current in every Single wavelength device, and record the peak wavelength of this crest spectrum corresponding under different measuring electric current;
(3) measured under same measurement electric current to all identical crests all peak wavelengths are averaged, and the minimum value in all mean values obtained under different measuring electric current is designated as minimum peak wavelength value, crest corresponding when wherein identical crest refers to that in all multi-wavelength devices or all Single wavelength devices, luminous zone component concentration is identical;
(4) using the component concentration of luminous zone corresponding for different crest as independent variable (horizontal ordinate), and using junction temperature corresponding for the minimum peak wavelength value electric current of each crest as dependent variable (ordinate).The junction temperature function T that corresponding minimum peak wavelength value is corresponding is determined by matching
0=f (x); The wherein measurement current value of minimum peak wavelength value electric current corresponding to the minimum value in all mean value in step (3), the measurement electric current namely corresponding to minimum peak wavelength value is minimum peak wavelength value electric current;
(5) the measurement electric current being less than minimum peak wavelength value electric current is designated as blue shift electric current, by the peak wavelength of all crests under each measurement electric current in blue shift electric current and the difference (λ of minimum peak wavelength value
1-λ
0) as independent variable (horizontal ordinate), by the blue shift district junction temperature difference △ T under the measurement electric current of correspondence
1as dependent variable (ordinate), determine the blue shift district junction temperature difference functions △ T corresponding to blue shift electric current by matching
1=f (λ
1-λ
0).Wherein blue shift district junction temperature difference △ T
1for in blue shift electric current, certain measures the absolute value of the difference of junction temperature under electric current junction temperature corresponding with minimum peak wavelength value electric current, obtain blue shift district junction temperature function T by blue shift district junction temperature difference functions
blue=f (x, λ
1-λ
0)=f (x)-f (λ
1-λ
0)=T
0-△ T
1;
The measurement electric current being greater than minimum peak wavelength value electric current is designated as red shift electric current, by the peak wavelength of all crests under each measurement electric current in red shift electric current and the difference (λ of minimum peak wavelength value
2-λ
0) as independent variable (horizontal ordinate), by the red shift district junction temperature difference △ T under the measurement electric current of correspondence
2as dependent variable (ordinate), determine the red shift district junction temperature difference functions △ T corresponding to red shift electric current by matching
2=f (λ
2-λ
0).Wherein red shift district junction temperature difference △ T
2for in red shift electric current, certain measures the absolute value of the difference of junction temperature under electric current junction temperature corresponding with minimum peak wavelength value electric current, obtain the junction temperature function T corresponding to red shift district electric current by red shift district junction temperature difference functions
red=f (x, λ
2-λ
0)=f (x)+f (λ
2-λ
0)=T
0+ △ T
2.
The measuring method of light emitting semiconductor device junction temperature provided by the invention, first determine the component concentration x of light emitting semiconductor device luminescent layer, and to carrying out the measurement of luminescent spectrum, according to the peak wavelength of the spectroscopic data of record, determine the flex point of blue shift and red shift, i.e. minimum peak wavelength, and utilize energy-conservation function T
0=f (x) determines the junction temperature T of its correspondence
0.Then according to the peak wavelength measured, respectively according to blue shift district junction temperature function T
blue=f (x, λ
1-λ
0) and red shift district junction temperature function T
red=f (x, λ
2-λ
0), draw the junction temperature of its correspondence.
The concrete steps of the measuring method of light emitting semiconductor device junction temperature provided by the invention are as follows:
(1) the component concentration x of the luminous zone needing the light emitting semiconductor device measured is determined;
(2) adopt the higher spectral detector (accuracy requirement≤0.1nm) of precision, measuring element is lower than its running current (<350mA/mm
2) and higher than its running current (>350mA/mm
2) under spectrum (running current is 350mA/mm
2), measure the phenomenon needing to comprise blue shift and red shift in this spectra obtained, and the peak wavelength of the crest of the light emitting semiconductor device that each spectrum is corresponding under recording different electric current, wherein the current intervals of the intersection of blue shift and Red Shift Phenomena need be got little, is 0.1 ~ 10mA/mm
2, can precision be improved like this;
(3) according to a series of spectrum that step (2) obtains, determine the crest blue shift of light emitting semiconductor device and the joint of red shift, the peak wavelength that this joint is corresponding is the minimum peak wavelength X of this light emitting semiconductor device
0(flex point), the measurement electric current that this joint is corresponding is minimum peak wavelength electric current I
0, according to the component concentration x of the luminous zone of light emitting semiconductor device and the minimum peak wavelength X of light emitting semiconductor device
0corresponding junction temperature T
0relational expression, i.e. junction temperature function T
0=f (x), determines the minimum peak wavelength X of light emitting semiconductor device
0corresponding junction temperature T
0;
(4) minimum peak wavelength electric current I is less than by all measurement electric currents of step (2)
0measurement electric current be designated as blue shift district electric current, be greater than minimum peak wavelength electric current I
0measurement electric current be designated as red shift district electric current; By in blue shift district electric current, any one measures electric current I
1the peak wavelength λ of the crest of corresponding light emitting semiconductor device
1substitute into blue shift district junction temperature function T
blue=f (x, λ
1-λ
0), obtain measuring electric current I
1corresponding light emitting semiconductor device junction temperature T
blue; By in red shift district electric current, any one measures electric current I
2the peak wavelength λ of the crest of corresponding light emitting semiconductor device
2substitute into red shift district junction temperature function T
red=f (x, λ
2-λ
0), obtain measuring electric current I
2corresponding light emitting semiconductor device junction temperature T
red; Namely the light emitting semiconductor device junction temperature under all measurement electric currents is obtained.
Below in conjunction with accompanying drawing and form, by specific embodiment, the present invention is further elaborated.
Drawing of the junction temperature measurement formula of one: InGaN/GaN LED.
1). two kinds of packaged LED devices some with multi-wavelength are provided, wherein the first device is sent out 440nm (nearly n-GaN end) and the light of 460nm wavelength (namely the first device is a dual wavelength device, its primary peak is about 440nm, secondary peak is about 460nm), the second device send out 485nm (near n-GaN end) and the light of 440nm wavelength (namely the second device is a dual wavelength device, its primary peak is about 440nm, and secondary peak is about 485nm).The primary peak of the first device and the primary peak of the second device are identical crest, be designated as crest one, the secondary peak of the first device is designated as crest two, the secondary peak of the second device is designated as crest three, the content (x) of indium (In) component of crest one, crest two, crest three correspondence is respectively 15%, 18% and 21%;
2). according to the experimental data adopting forward voltage method to draw in document (S.Chhajed et al.Influenceof junction temperature on chromaticity and color-rendering properties oftrichromatic white-light sources based on light-emitting diodes.Journal of AppliedPhysics 97,054506 (2005)), determine the junction temperature that crest two is corresponding under different measuring electric current, and record the peak wavelength of crest two spectrum corresponding under different measuring electric current;
3). measure and record the first device and the second device in step 2) in measurement electric current under the peak wavelength of corresponding spectrum, see Fig. 1 and Fig. 2, the all peak wavelengths measured under same junction temperature (measurement electric current) to all crests are averaged, in table 1 and table 2;
The peak wavelength value of the first device of table 1 under different junction temperature (corresponding different electric current)
The peak wavelength value of table 2 the second device under different junction temperature (corresponding different electric current)
4). according to the data in table 1 and table 2, determine minimum peak wavelength value λ corresponding respectively in all crests
0;
5). using In component concentration x corresponding for different crest as independent variable (horizontal ordinate), junction temperature corresponding to corresponding minimum peak wavelength value electric current, as dependent variable (ordinate), is shown in Fig. 3, determines corresponding λ by matching
0corresponding junction temperature function T
0=1740.8x
1.9+ 298;
6). the measurement electric current being less than minimum peak wavelength value electric current is designated as blue shift electric current, by the peak wavelength of all crests under each measurement electric current in blue shift electric current and the difference (λ of minimum peak wavelength value
1-λ
0) as independent variable (horizontal ordinate), by the blue shift district junction temperature difference △ T under the measurement electric current of correspondence
1as dependent variable (ordinate), see Fig. 4.Blue shift district junction temperature function T is determined by matching
blue=T
0-△ T
1=1740.8x
1.9+ 298-37.7 (λ
1-λ
0)
0.41, (T
blue< T
0);
The measurement electric current being greater than minimum peak wavelength value electric current is designated as red shift electric current, by the peak wavelength of all crests under each measurement electric current in red shift electric current and the difference (λ of minimum peak wavelength value
2-λ
0) as independent variable (horizontal ordinate), by the red shift district junction temperature difference △ T under the measurement electric current of correspondence
2as dependent variable, (ordinate is shown in Fig. 5.Corresponding red shift district junction temperature function T is determined by matching
red=T
0+ △ T
2=1740.8x
1.9+ 298+44.4 (λ
2-λ
0)
0.45, (T
red> T
0).
Therefore, the junction temperature function for InGaN/GaN LED component can be summarized as following form:
Junction temperature function T
0=ex
a+ k;
Blue shift district junction temperature function T
blue=ex
a+ k-c (λ
1-λ
0)
b(T
blue< T
0);
Red shift district junction temperature function T
red=ex
a+ k+d (λ
2-λ
0)
f(T
red> T
0).
Wherein x is light emitting region material component concentration (as In), and a, b, c, d, e, f, k are fitting parameter (constant).
The junction temperature measurement of two: InGaN/GaN LED component.
(1). determine component indium (In) content (x=0.175) of the luminous zone needing the LED component measured;
(2). adopt the spectral detector (accuracy requirement≤0.1nm) that precision is higher, the spectrum of measuring element under different electric current, the phenomenon comprising blue shift and red shift is needed in this spectra measured, and the peak wavelength that under recording different electric current, each spectrum is corresponding, in table 3;
(3). according to the spectrum measured, determine the joint (45.79mA/mm of blue shift and red shift
2), i.e. minimum peak wavelength (λ
0=460.3nm), according to the junction temperature function T that derives
0=1740.8x
1.9+ 298, determine λ
0the junction temperature T that place is corresponding
0=361K;
(4). for blue shift district electric current (<45.79mA/mm
2), by peak wavelength (λ corresponding for different electric current
1) substitute into the blue shift district junction temperature function T derived
blue=1740.8x
1.9+ 298-37.7 (λ
1-λ
0)
0.41, the junction temperature T that different operating electric current is corresponding can be obtained
blue, in table 3;
(5). for red shift district electric current (>45.79mA/mm
2), by peak wavelength (λ corresponding for different electric current
2) substitute into the red shift district junction temperature function T derived
red=1740.8x
1.9+ 298+44.4 (λ
2-λ
0)
0.45, the junction temperature T that different operating electric current is corresponding can be obtained
red, in table 3.
Peak wavelength value under different electric current of the LED component of a table 3 460nm wavelength light and junction temperature
| Electric current (mA) | Peak wavelength (nm) | Junction temperature (K) |
| 5.9 | 462.1 | 313 |
| 10.9 | 461.6 | 319 |
| 15.9 | 461.2 | 325 |
| 20.9 | 461.0 | 328 |
| 25.9 | 460.8 | 333 |
| 30.9 | 460.6 | 338 |
| 35.79 | 460.5 | 342 |
| 40.8 | 460.4 | 346 |
| 45.79 | 460.3 | 361 |
| 50.9 | 460.5 | 383 |
| 55.79 | 460.7 | 390 |
| 60.79 | 460.8 | 394 |
| 65.9 | 461.1 | 401 |
| 70.9 | 461.2 | 403 |
| 75.9 | 461.3 | 405 |
| 80.9 | 461.4 | 407 |
| 85.9 | 461.6 | 411 |
| 90.89 | 461.8 | 414 |
| 95.9 | 462.4 | 423 |
| 100.9 | 462.7 | 427 |
Other technological processes related in the present embodiment and condition are common process, belong to this area the category be familiar with, do not repeat them here.
Contemplated by the invention and increase along with electric current and the hypsochromic effect impact different with luminous zone component concentration that produce, enhance practicality, reduce cost, improve measurement efficiency.Simultaneously by carrying out to the Single wavelength device of multiple different wave length or the spectroscopic data of multi-wavelength device the coefficient that relevant junction temperature function is determined in matching.Adopt multi-wavelength device to determine the coefficient of relevant junction temperature function, only need measure the junction temperature that in every multi-wavelength device, any crest is corresponding, so both can reduce the workload of measurement, can precision be improved again, reduce error.
The above-mentioned embodiment shown by reference to the accompanying drawings just schematically; not form limiting the scope of the invention; belonging to the researchist in field on the basis of the measuring method of light emitting semiconductor device junction temperature provided by the invention, do not need to pay creative work and the various amendment made or distortion still in protection scope of the present invention.
Claims (4)
1. a measuring method for light emitting semiconductor device junction temperature, is characterized in that, comprises the following steps:
1) the component concentration x of the luminous zone needing the light emitting semiconductor device measured is determined;
2) spectral detector is adopted to measure light emitting semiconductor device lower than its running current with higher than the spectrum under its running current, obtain the spectrum under a series of different measuring electric current, and containing the crest blue shift of light emitting semiconductor device and the spectrum of Red Shift Phenomena in a series of spectrum obtained above, record the peak wavelength of the crest of the light emitting semiconductor device that each spectrum is corresponding respectively in a series of spectrum obtained above simultaneously;
3) according to step 2) a series of spectrum of obtaining, determine the crest blue shift of light emitting semiconductor device and the joint of Red Shift Phenomena, the peak wavelength that this joint is corresponding is the minimum peak wavelength X of this light emitting semiconductor device
0, the measurement electric current that this joint is corresponding is minimum peak wavelength electric current I
0, according to junction temperature function T
0=f (x), determines the minimum peak wavelength X of light emitting semiconductor device
0corresponding junction temperature T
0;
4) by step 2) all measurement electric currents in be less than minimum peak wavelength electric current I
0measurement electric current be designated as blue shift district electric current, be greater than minimum peak wavelength electric current I
0measurement electric current be designated as red shift district electric current; By in blue shift district electric current, any one measures electric current I
1the peak wavelength λ of the crest of corresponding light emitting semiconductor device
1substitute into blue shift district junction temperature function T
blue=f (x, λ
1-λ
0), obtain measuring electric current I
1corresponding light emitting semiconductor device junction temperature T
blue; By in red shift district electric current, any one measures electric current I
2the peak wavelength λ of the crest of corresponding light emitting semiconductor device
2substitute into red shift district junction temperature function T
red=f (x, λ
2-λ
0), obtain measuring electric current I
2corresponding light emitting semiconductor device junction temperature T
red; Namely the light emitting semiconductor device junction temperature under all measurement electric currents is obtained;
Wherein junction temperature function T
0=f (x), blue shift district junction temperature function T
blue=f (x, λ
1-λ
0) and red shift district junction temperature function T
red=f (x, λ
2-λ
0) obtained by following steps:
A) prepare some multi-wavelength devices, wherein multi-wavelength device is the device having multiple crest in spectrum, determines the component concentration x of the luminous zone corresponding to each crest of every multi-wavelength device;
Or prepare many Single wavelength devices, wherein Single wavelength device is the device only having a crest in spectrum, and the crest of all Single wavelength devices is incomplete same, determines the component concentration x of the luminous zone corresponding to crest of every Single wavelength device;
B) adopt forward voltage method, determine the junction temperature that in every multi-wavelength device, any one crest is corresponding under different measuring electric current, and record the peak wavelength in the spectrum of this crest under different measuring electric current; Measure and record the peak wavelength in every multi-wavelength device in the spectrum of all the other crests under different measuring electric current; The junction temperature that wherein the different crests of same multi-wavelength device are corresponding under same measurement electric current is equal;
Or, adopt forward voltage method, determine the junction temperature of the crest correspondence under different measuring electric current in every Single wavelength device, and record the peak wavelength in the spectrum of this crest under different measuring electric current;
C) measured under same measurement electric current to all identical crests all peak wavelengths are averaged, and the minimum value in all mean values obtained under different measuring electric current is designated as minimum peak wavelength value, measurement electric current corresponding to minimum peak wavelength value is minimum peak wavelength value electric current, crest corresponding when wherein identical crest refers to that the component concentration of luminous zone in all multi-wavelength devices or all Single wavelength devices is identical;
D) using the component concentration of luminous zone corresponding for different crest as independent variable, and using junction temperature corresponding for the minimum peak wavelength value electric current of each crest as dependent variable, obtain junction temperature function T by matching
0=f (x);
E) the measurement electric current being less than minimum peak wavelength value electric current is designated as blue shift electric current, using the peak wavelength of all crests corresponding for measurement electric current each in blue shift electric current and the difference of minimum peak wavelength value as independent variable, by the blue shift district junction temperature difference △ T under the measurement electric current of correspondence
1as dependent variable, obtain blue shift district junction temperature difference functions △ T by matching
1=f (λ
1-λ
0), thus obtain blue shift district junction temperature function; Wherein blue shift district junction temperature difference △ T
1for the absolute value of the difference of the junction temperature that measurement electric current a certain in blue shift electric current the is corresponding junction temperature corresponding with minimum peak wavelength value electric current, blue shift district junction temperature function T
blue=f (x, λ
1-λ
0)=f (x)-f (λ
1-λ
0)=T
0-△ T
1;
The measurement electric current being greater than minimum peak wavelength value electric current is designated as red shift electric current, using the peak wavelength of all crests corresponding for measurement electric current each in red shift electric current and the difference of minimum peak wavelength value as independent variable, by the red shift district junction temperature difference △ T under the measurement electric current of correspondence
2as dependent variable, obtain red shift district junction temperature difference functions △ T by matching
2=f (λ
2-λ
0), thus obtain red shift district junction temperature function; Wherein red shift district junction temperature difference △ T
2for the absolute value of the difference of the junction temperature that measurement electric current a certain in red shift electric current the is corresponding junction temperature corresponding with minimum peak wavelength value electric current, red shift district junction temperature function T
red=f (x, λ
2-λ
0)=f (x)+f (λ
2-λ
0)=T
0+ △ T
2.
2. the measuring method of light emitting semiconductor device junction temperature according to claim 1, is characterized in that: when light emitting semiconductor device is InGaN/GaN LED,
Its junction temperature function T
0=ex
a+ k;
Blue shift district junction temperature function T
blue=ex
a+ k-c (λ
1-λ
0)
b;
Red shift district junction temperature function T
red=ex
a+ k+d (λ
2-λ
0)
f;
Wherein x is the component concentration of luminous zone, and a, b, c, d, e, f, k are fitting parameter.
3. the measuring method of light emitting semiconductor device junction temperature according to claim 1, is characterized in that: described step 2) in the measuring accuracy of spectral detector be≤0.1nm.
4. the measuring method of light emitting semiconductor device junction temperature according to claim 1, is characterized in that: described step 2) in when measuring the spectrum of semiconductor devices, with 0.1 ~ 10mA/mm
2current intervals measure.
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