CN104795617B - Millimeter wave orthocoupler and its design method with arbitrarily coupling factor - Google Patents
Millimeter wave orthocoupler and its design method with arbitrarily coupling factor Download PDFInfo
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Abstract
The invention discloses a kind of millimeter wave orthocoupler and its design method with arbitrarily coupling factor based on patch unit, it includes four 90 degree of fan-shaped offset of microstrip patch units to overlap, four port lines, form to several metallization VIAs and medium substrate and metal along patch unit edge distribution；It is used for forming the integrated waveguide coupler of the medium based on patch unit 90 degree of fan-shaped offset of microstrip patch units, four port lines, medium substrate and the metal of four edge metal-loaded vias, four 90 degree of fan-shaped offset of microstrip patch units are equal to top sector radius, adjacent sectors radius, the ratio between its different radius value realizes different coupling factors, and the port line position of described four 90 degree of the heart septums along patch unit is used for realizing the quadrature in phase function of coupler；The millimeter wave orthocoupler of the present invention, can be widely used in modem, power amplifier, balanced mixer, system power detection, multi-beam antenna array the system such as amplitude control circuit in.
Description
Technical field
It is more particularly to a kind of based on the defeated of patch unit the present invention relates to the coupler used in microwave, millimetre-wave attenuator
There is the millimeter wave orthocoupler of arbitrarily coupling factor, and the design method of the coupler between exit port.
Background technology
Coupler is a kind of directive power divider of tool, and it can be from the forward wave of main Transmission system according to not
In proportion power distribution to coupled end.In power gain controller part, balance amplifier, modulation-demodulation circuit, phased array thunder
Up in the feeding network of system, it is required for using coupler.All the time, people are around the 3dB for how improving coupler
Bandwidth of operation and how to reduce in terms of circuit size and had extensive research, but have to being operated in millimere-wave band
The research of the orthocoupler of arbitrarily coupling coefficient is relatively fewer.
In fact, the orthocoupler with arbitrarily coupling factor is often used in many special applications, such as not
Divide the amplitude of the power amplifier of ratio, modem, balanced mixer, system power detection and multi-beam antenna array Deng work(
Control circuit.So the coupler with arbitrarily coupling factor is also most important.
In millimeter wave frequency band, with whole system rapidly to miniaturization, lightweight, high reliability, multifunctionality and it is low into
This direction is developed.For traditional metal waveguide device because its volume is big, processing technology and debugging process are complicated, should so as to result in
It is expensive with system cost, it is difficult in maintenance.Microstrip circuit and the integrated circuit of early stage are due to the leakage and radiation of electromagnetic wave in circuit
Than more serious, the insertion loss of circuit is big,QValue is than relatively low, and its circuit size also very little, high to requirement on machining accuracy, makes
Valency cost is high.So in order to reduce the volume of communication system, system cost is reduced, people have to find other replacement skill
Art.
Patch unit due to its easy processing be molded, there is very strong mechanical structure performance, low section, low cost,
The devices such as antenna, wave filter and the coupler for being widely used in designing in wireless communication system.In addition, because of patch unit
Exclusive large scale characteristic can overcome millimetric wave device circuit size too small well, to wanting in terms of machining accuracy, cost
Ask the defects of higher.
Substrate integration wave-guide（SIW）Technology is that a kind of can be integrated in dielectric substrate has filter with low insertion loss, Low emissivity, height
The characteristics such as power capacity it is new guided wave structure, total is entirely that the plated-through hole array on dielectric substrate is formed,
So this structure can utilize commonlyPCB Technique,LTCCTechnique, even thin film circuit technique accurately realizes, processing cost
Very cheap, the Integrated design and high-volume for being especially suitable for microwave and millimeter wave circuit make.
Therefore, using substrate integrated waveguide technology, a kind of milli with arbitrarily coupling factor based on patch unit is designed
Metric wave orthocoupler, above mentioned problem will be readily solved.
Therefore, this paper presents one can realize the millimeter wave orthocoupler with arbitrarily coupling factor, compared to
Traditional coupler with arbitrarily coupling factor, it has, and filter with low insertion loss, circuit structure are simple, design process is simple, without additional
The characteristics of impedance matching circuit, in addition, it also has easy processing, the mechanical structure performance that cost is low, stronger, phase between output port
The advantages such as potential difference stabilization.
The content of the invention
It is an object of the invention to overcome tradition have arbitrarily coupling factor millimeter wave orthocoupler design process,
Deficiency on circuit performance, processing cost, and fill up in office using the coupler of substrate integrated waveguide technology based on patch unit
Blank in meaning coupling factor characteristic research, and offer is a kind of simple and reasonable for structure, can realize the millimeter wave of arbitrarily coupling factor
Orthocoupler.
The purpose of the present invention solves by following technical measures：
A kind of millimeter wave orthocoupler with arbitrarily coupling factor based on patch unit, it is characterized in that, including from
The three-decker arranged successively under up to：First layer is micro-strip patch unit, and the second layer is substrate, and third layer is metal ground layer；
Wherein, the millimeter wave corss coupling based on patch unit of edge metal-loaded via is provided with first layer micro-strip patch unit
Clutch.
As more specifically scheme, the orthogonal coupling of the millimeter wave based on patch unit of the edge metal-loaded via
Device is made up of mixing fan-shaped offset of microstrip patch unit and metallization VIA.
Above-mentioned mixing fan-shaped offset of microstrip patch unit overlaps including four, the fan-shaped offset of microstrip patch unit that angle is 90 degree
Formed with four microstrip lines；The fan-shaped offset of microstrip sheet list that opsition dependent symmetric relation overlaps described four, angle is 90 degree
Member is divided into two groups, and the trunnion axis of first group of two fan-shaped offset of microstrip patch units is symmetrical with vertical axes and structure is consistent, and second
The trunnion axis of two fan-shaped offset of microstrip patch units of group is symmetrical with vertical axes and structure is consistent, and two groups of fan-shaped offset of microstrip sheet lists
Member is mutually linked；The handing-over line of the center line of four microstrip lines two fan-shaped offset of microstrip patch units adjacent with position respectively
Overlap, and two fan-shaped offset of microstrip patch units that each microstrip line accordingly overlaps with handing-over line respectively are connected.
It also includes four micro-strip impedance matching lines, and four micro-strip impedance matching lines are connected corresponding four micro-strips respectively
The line other end.
It also includes four micro-strip port lines, and four micro-strip port lines are connected corresponding four micro-strip impedance matchings respectively
The line other end.
Several are loaded on the edge of described first group of two fan-shaped offset of microstrip patch units respectively on horizontal axis pair
Claim and metallization VIA from circular arc to both sides that be distributed evenly along, on the edge of second group of two fan-shaped offset of microstrip patch units
Several are loaded respectively on vertical axis is symmetrical and is distributed evenly along metallization VIA from circular arc to both sides.
The metallization VIA is symmetrical on the angular bisector of 90 degree of fan-shaped offset of microstrip patch units, and the metallization VIA
The center of circle along apart from micro-strip sheet cell edges 2*R via Mm circular arc is equably distributed to both sides, upper end connection micro-strip sheet
Unit, lower end connection metal ground layer.
The millimeter wave orthocoupler based on patch unit of the edge metal-loaded via, is consolidated using micro belt process
It is scheduled on substrate, substrate is dielectric material substrate, and dielectric material uses Rogers RT/Duroid of the thickness for 0.254mm
5880 materials, its dielectric constant are 2.2.
The metal ground layer is to be paved with the metal ground layer of good conductor.
The coupler with arbitrarily coupling factor is on the premise of quadrature in phase between ensureing output port, it is possible to provide
3dB-10dB power-adjustable proportioning output.
The design of the millimeter wave orthocoupler with arbitrarily coupling factor can be only by changing adjacent fan-shaped offset of microstrip
The radii ratio of patch unit realizes different coupling factors.
The coupler structure with arbitrarily coupling factor can also be realizing other passive devices（Such as power splitter）
Function.
It is any that the present invention also provides a kind of millimeter wave orthocoupler with arbitrarily coupling factor based on patch unit
The design method of coupling factor：First, according to required centre frequency, the relative dielectric constant of medium substrate, fan-shaped offset of microstrip is calculated
The initial radium value of patch unit, then suitably determine that the position of metallization VIA is good between input/output end port to meet
Impedance matching, the radii ratio of adjacent patch unit is then finely tuned by full-wave electromagnetic simulation software, realizes design
Coupling factor, the position of metallization VIA is finally finely tuned to compensate the change band of the radii ratio of adjacent fan-shaped offset of microstrip patch unit
The impedance mismatching come.
Beneficial effects of the present invention are as follows：
（1）Present invention firstly provides a kind of orthogonal coupling of millimeter wave with arbitrarily coupling factor based on patch unit
Device, there is 90 ° of phase differences and arbitrarily coupling factor between its output port, be very suitable for modem, power amplifier, flat
The systematic differences such as weighing apparatus frequency mixer, system power detect, the amplitude control circuit of multi-beam antenna array.
（2）Compared with prior art, implement that arbitrarily coupling factor is had based on patch unit employed in the present invention
Millimeter wave orthocoupler, have the advantages that：A, by adjusting the radii ratio of adjacent fan-shaped offset of microstrip patch unit,
Design process is simple, can be achieved have 90 ° of phase differences and arbitrarily coupling factor between output port；B, simple in construction, superior performance,
It is easy to integrate with other circuits；C, using micro-strip sheet cellular construction, possesses unique large scale working characteristics, stronger machinery
Structural behaviour, low section, low cost；D, achievable coupling factor codomain scope is wide, and phase difference is stable between output port.
Brief description of the drawings
Fig. 1 is side structure schematic diagram of the embodiment of the present invention.
Fig. 2 is first layer of embodiment of the present invention upper strata micro-strip overall structure diagram.
Fig. 3 is the embodiment of the present invention in different radii ratio and the emulation graph of a relation of coupling factor.
Fig. 4 is the parameter table that coupling factor is the circuit physical size corresponding to 3dB, 6dB and 10dB.
Fig. 5 is to be emulated when coupling factor is 3dB between output port of the embodiment of the present invention and the amplitude response result pair of measurement
Than figure.
Fig. 6 is to be emulated when coupling factor is 3dB between output port of the embodiment of the present invention and the phase response result pair of measurement
Than figure.
Fig. 7 is to be emulated when coupling factor is 6dB between output port of the embodiment of the present invention and the amplitude response result pair of measurement
Than figure.
Fig. 8 is to be emulated when coupling factor is 6dB between output port of the embodiment of the present invention and the phase response result pair of measurement
Than figure.
Fig. 9 is to be emulated when coupling factor is 10dB between output port of the embodiment of the present invention and the amplitude response result pair of measurement
Than figure.
Figure 10 is to be emulated when coupling factor is 10dB between output port of the embodiment of the present invention and the phase response result of measurement
Comparison diagram.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, to the embodiment of the present invention used by technical scheme carry out it is clear
Clear, detailed description, described embodiment are only the part of the embodiment in the present invention, rather than whole embodiments.
Based on embodiments of the invention, those of ordinary skill in the art obtained on the premise of creative work is not made other
Embodiment, belong to the protection domain of the embodiment of the present invention.
With reference to shown in Fig. 1 and Fig. 2, a kind of orthogonal coupling of millimeter wave with arbitrarily coupling factor based on patch unit
Device, it is characterized in that, including the three-decker arranged successively from top to bottom：First layer is micro-strip patch unit 101, and the second layer is base
Plate 102, third layer are metal ground layer 103；Wherein, edge metal-loaded mistake is provided with first layer micro-strip patch unit 101
The millimeter wave orthocoupler 200 based on patch unit in hole.
The millimeter wave orthocoupler 200 based on patch unit of the edge metal-loaded via is fan-shaped micro- by mixing
Band patch unit 201 and metallization VIA 202 form.
The mixing fan-shaped offset of microstrip patch unit 201 overlaps including four, the fan-shaped offset of microstrip sheet that angle is 90 degree
Unit A1, A2, A3, A4, four microstrip line B1, B2, B3, B4, four micro-strip impedance matching line C1, C2, C3, C4 and four micro-strips
Port lines D1, D2, D3, D4 are formed；The fan-shaped offset of microstrip piece that opsition dependent symmetric relation overlaps described four, angle is 90 degree
Shape unit A1, A2, A3, A4 are divided to for two groups, and the trunnion axis and vertical axes of first group of two fan-shaped offset of microstrip patch units A1, A4 are equal
Symmetrical and structure is consistent, and radius isR 2 , the trunnion axis and vertical axes of second group of two fan-shaped offset of microstrip patch units A2, A3 be equal
Symmetrical and structure is consistent, and radius isR 2, And two groups of fan-shaped offset of microstrip patch units are mutually linked；Four microstrip line B1, B2,
The handing-over line of B3, B4 center line two fan-shaped offset of microstrip patch units adjacent with position respectively overlaps, and each microstrip line B1,
Two fan-shaped offset of microstrip patch units A1, A2 that B2, B3, B4 accordingly overlap with handing-over line respectively are connected, four micro-strips resistance
Anti- matched line C1, C2, C3, C4 one end are connected corresponding four microstrip lines B1, B2, B3, B4, four micro-strip impedance matchings respectively
Line C1, C2, C3, C4 other end are connected with corresponding four micro-strip port lines D1, D2, D3, D4 respectively.
Wherein, four microstrip lines B1, B2, B3, B4 shapes and sizes are consistent, are widthW 2 , end is apart from micro strip
The distance of shape unit center isL 1 -L 2 -L tap ；Four micro-strip impedance matching lines C1, C2, C3, C4 shapes and sizes are consistent,
It is upper bottom widthW 1 , lower bottom widthW 2 , it is a height ofL tap Isosceles trapezoid；Four micro-strip port lines D1, D2, D3, D4 shapes and sizes are equal
Unanimously, it is a length ofL 2 , it is a width ofW 1 Rectangle.
Several are loaded on the edge of described first group of two fan-shaped offset of microstrip patch units A1, A4 respectively on trunnion axis
Line is symmetrical and metallization VIA 202 from circular arc to both sides that be distributed evenly along, second group of two fan-shaped offset of microstrip patch units
Several are loaded on A2, A3 edge respectively on vertical axis is symmetrical and is distributed evenly along metal from circular arc to both sides
Change via 202.
The metallization VIA 202 is symmetrical on the angular bisector of 90 degree of fan-shaped offset of microstrip patch units, and the metallization
The center of circle of via 202 is along apart from micro-strip sheet cell edges 2*R via Mm circular arc is equably distributed to both sides, upper end connection
Micro-strip patch unit 101, lower end connection metal ground layer 102, the metallization VIA radius areR via 。
The millimeter wave orthocoupler 200 based on patch unit of the edge metal-loaded via, using micro-strip work
Skill is fixed on substrate 102, and substrate 102 is dielectric material substrate 102, and dielectric material uses Rogers of the thickness for 0.254mm
The materials of RT/Duroid 5880, its dielectric constant are 2.2.
The metal ground layer 103 is to be paved with the metal ground layer 103 of good conductor.
The coupler with arbitrarily coupling factor is on the premise of quadrature in phase between ensureing output port, it is possible to provide
3dB-10dB power-adjustable proportioning output.
The design of the millimeter wave orthocoupler with arbitrarily coupling factor can be only by changing adjacent fan-shaped offset of microstrip
The radii ratio of patch unit realizes different coupling factors.
The coupler structure with arbitrarily coupling factor can also be realizing other passive devices（Such as power splitter）
Function.
A kind of millimeter wave orthocoupler arbitrarily coupling factor with arbitrarily coupling factor based on patch unit is set
Meter method：First, according to required centre frequency（This example is 30GHz）, the relative dielectric constant of medium substrate（This example is 2.2）,
Calculate patch unit A1, A2, A3, A4 initial radium valueR 1 、R 2 （Initial valueR 1 =R 2 ）, then suitably determine metallization VIA
202 positionθ 1、 θ 2 To meet good impedance matching between input/output end port, then finely tuned by full-wave electromagnetic simulation software
The radii ratio of adjacent patch unitR 1/R 2, realize the coupling factor of design, finally finely tune the position of metallization VIA with
Compensate the impedance mismatching that the change of the radii ratio of adjacent patch unit is brought.
Above-mentioned each circuit parameter is：L 1 =14 mm,W 1 =0.472 mm,W 2 =0.789 mm,R via =0.15 mm, above parameter
Immobilize, remaining parameter（R 1 、R 2 、θ 1 、θ 2 、L 2 、L tap ）It is different vertically in the circuit of different coupling factors.
Reference picture 3（The embodiment of the present invention is in different radii ratio and the emulation graph of a relation of coupling factor）, corresponding to it
The parameter of circuit physical size is as shown in Figure 4 when 3dB, 6dB, 10dB difference coupling factor.From figure 3, it can be seen that the present invention can
The signal output of 3dB to 10dB arbitrarily coupling factor is provided.
Reference picture 5（The amplitude response knot for emulating and measuring when coupling factor is 3dB between output port of the embodiment of the present invention
Fruit comparison diagram）And Fig. 6（The phase response result for emulating and measuring when coupling factor is 3dB between output port of the embodiment of the present invention
Comparison diagram）, it is correspondingR 1 =3.75mm,R 2 =4.8mm,θ 1 =30 °,θ 2 =25 °,L 2 =5.7mm,L tap =3mm, now, this coupler
Centre frequency（30GHz）Phase difference is 92.1 ° between locating output port, and the S parameter of measurement is S11=-37.4dB, S21=-
4.57dB S31=-4.17 dB, S41=-24.5dB。
Reference picture 7（The amplitude response knot for emulating and measuring when coupling factor is 6dB between output port of the embodiment of the present invention
Fruit comparison diagram）And Fig. 8（The phase response result for emulating and measuring when coupling factor is 6dB between output port of the embodiment of the present invention
Comparison diagram）, it is correspondingR 1 =4mm,R 2 =4.3mm,θ 1 =24.6 °,θ 2 =23.67 °,L 2 =5.475mm,L tap =0.1mm, now, this
Coupler centre frequency（30GHz）Phase difference is 92.0 ° between locating output port, and the S parameter of measurement is S11=-16.9dB, S21=-
7.8dB, S31=-2.3 dB, S41=-24.8dB。
Reference picture 9（The amplitude response knot for emulating and measuring when coupling factor is 10dB between output port of the embodiment of the present invention
Fruit comparison diagram）And Figure 10（The phase response knot for emulating and measuring when coupling factor is 10dB between output port of the embodiment of the present invention
Fruit comparison diagram）, it is correspondingR 1 =4.09mm,R 2 =4.21mm,θ 1 =22.2 °,θ 2 =22.2 °,L 2 =5.475mm,L tap =0.1mm, this
When, this coupler centre frequency（30GHz）Phase difference is 90.9 ° between locating output port, and the S parameter of measurement is S11=-30.0dB,
S21=-11.4dB, S31=-2.25 dB, S41=-27.2dB。
Above-mentioned all results are Rogers RT/Duroid 5880 in baseplate material, dielectric constant 2.2, and substrate is thick
Spend under the true environment for 0.254 mm and measured by Network Analyzer.By more than emulation and test comparison figure it can be found that
The goodness of fit of emulation and measured curve is higher, and it is practical to indicate the solution of the present invention.
Above is to a kind of millimeter wave orthocoupler institute with arbitrarily coupling factor based on patch unit of the present invention
Being discussed in detail for embodiment is provided.The principle and embodiment of the present invention are illustrated with specific case herein, the above
The explanation of embodiment is only intended to help the method and its core concept for understanding the present invention.
For those of ordinary skill in the art, according to the thought of the present invention, in specific embodiments and applications
There will be changes, to sum up, this specification content should not be construed as limiting the invention.
Claims (7)
1. a kind of millimeter wave orthocoupler with arbitrarily coupling factor based on patch unit, it is characterized in that, including from upper
The three-decker arranged successively under：First layer is micro-strip patch unit（101）, the second layer is substrate（102）, third layer is gold
Possession layer（103）；Wherein, first layer micro-strip patch unit（101）On be provided with edge metal-loaded via based on sheet
The millimeter wave orthocoupler of unit（200）；
The millimeter wave orthocoupler based on patch unit of the edge metal-loaded via（200）By mixing fan-shaped offset of microstrip
Patch unit（201）And metallization VIA（202）Composition；
The mixing fan-shaped offset of microstrip patch unit（201）Overlapped including four, the fan-shaped offset of microstrip sheet list that angle is 90 degree
Member（A1、A2、A3、A4）With four microstrip lines（B1、B2、B3、B4）Form；Opsition dependent symmetric relation holds in the mouth mutually described four
Connect, the fan-shaped offset of microstrip patch unit that angle is 90 degree（A1、A2、A3、A4）It is divided into two groups, first group of two fan-shaped offset of microstrip sheets
Unit（A1、A4）Trunnion axis and vertical axes it is symmetrical and structure is consistent, second group of two fan-shaped offset of microstrip patch units（A2、
A3）Trunnion axis and vertical axes it is symmetrical and structure is consistent, and two groups of fan-shaped offset of microstrip patch units are mutually linked；Described four micro-
Band line（B1、B2、B3、B4）The handing-over lines of center line two fan-shaped offset of microstrip patch units adjacent with position respectively overlap, and
Each microstrip line（B1、B2、B3、B4）The two fan-shaped offset of microstrip patch units accordingly overlapped respectively with handing-over line（A1、A2、A3、
A4）Linking；
The metal ground layer（103）To be paved with the metal ground layer of good conductor（103）.
2. the millimeter wave orthocoupler with arbitrarily coupling factor based on patch unit according to claim 1, it is special
Sign is also to include four micro-strip impedance matching lines（C1、C2、C3、C4）, four micro-strip impedance matching lines（C1、C2、C3、C4）
Four microstrip lines corresponding to linking respectively（B1、B2、B3、B4）The other end.
3. the millimeter wave orthocoupler with arbitrarily coupling factor based on patch unit according to claim 2, it is special
Sign is also to include four micro-strip port lines（D1、D2、D3、D4）, four micro-strip port lines（D1、D2、D3、D4）It is connected respectively
Corresponding four micro-strips impedance matching line（C1、C2、C3、C4）The other end.
4. the millimeter wave orthocoupler with arbitrarily coupling factor based on patch unit according to claim 1, it is special
Sign is described first group of two fan-shaped offset of microstrip patch units（A1、A4）Edge on load several respectively on trunnion axis
Line is symmetrical and metallization VIA from circular arc to both sides that be distributed evenly along（202）, second group of two fan-shaped offset of microstrip sheet lists
Member（A2、A3）Edge on to load several respectively symmetrical on vertical axis and be distributed to both sides evenly along circular arc
Metallization VIA（202）.
5. the millimeter wave orthocoupler with arbitrarily coupling factor based on patch unit according to claim 4, it is special
Sign is the metallization VIA（202）Angular bisector on 90 degree of fan-shaped offset of microstrip patch units is symmetrical, and described metallizes
Hole（202）The center of circle along apart from micro-strip sheet cell edges 2*R via Mm circular arc is equably distributed to both sides, upper end connection
Micro-strip patch unit（101）, lower end connection metal ground layer（103）.
6. the millimeter wave orthocoupler with arbitrarily coupling factor based on patch unit according to claim 1, it is special
Sign is the millimeter wave orthocoupler based on patch unit of the edge metal-loaded via（200）, using micro belt process
It is fixed on substrate（102）On, substrate（102）For dielectric material substrate（102）, dielectric material uses thickness as 0.254mm's
The materials of Rogers RT/Duroid 5880, its dielectric constant are 2.2.
7. a kind of millimeter wave orthocoupler with arbitrarily coupling factor based on patch unit according to claim 1 is appointed
The design method for coupling factor of anticipating：First, according to required centre frequency, the relative dielectric constant of medium substrate, calculate fan-shaped micro-
Band patch unit（A1、A2、A3、A4）Initial radium value, then suitably determine metallization VIA（202）Position（θ1、θ2）
To meet good impedance matching between input/output end port, then adjacent patch unit is finely tuned by full-wave electromagnetic simulation software
Radii ratio（R1/R2）, the coupling factor of design is realized, finally finely tunes the position of metallization VIA to compensate adjacent fan
Shaped microstrip patch unit（A1、A2、A3、A4）Radii ratio the impedance mismatching brought of change.
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| CN106602196B (en) * | 2016-11-16 | 2019-07-30 | 中山大学 | The power divider and its design method for supporting microwave and millimeter wave frequency range to cooperate |
| CN116845557B (en) * | 2023-08-10 | 2024-01-26 | 北京瑞霖鑫达毫米波科技有限公司 | Antenna system for receiving and transmitting matching of radio frequency antenna and SIW coupler |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4127832A (en) * | 1977-02-07 | 1978-11-28 | Riblet Gordon P | Directional coupler |
| CN1825691A (en) * | 2006-01-26 | 2006-08-30 | 东南大学 | Microwave millimeter wave substrate integrated waveguide directioning coupler |
| CN1949589A (en) * | 2006-07-10 | 2007-04-18 | 东南大学 | Half module substrate integrated wave guide ring electric bridge |
| CN1976115A (en) * | 2006-11-28 | 2007-06-06 | 东南大学 | H surface substrate integrated waveguide ring-shape bridge |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN204538170U (en) * | 2015-04-10 | 2015-08-05 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | There is the millimeter wave orthocoupler of arbitrarily coupling factor |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4127832A (en) * | 1977-02-07 | 1978-11-28 | Riblet Gordon P | Directional coupler |
| CN1825691A (en) * | 2006-01-26 | 2006-08-30 | 东南大学 | Microwave millimeter wave substrate integrated waveguide directioning coupler |
| CN1949589A (en) * | 2006-07-10 | 2007-04-18 | 东南大学 | Half module substrate integrated wave guide ring electric bridge |
| CN1976115A (en) * | 2006-11-28 | 2007-06-06 | 东南大学 | H surface substrate integrated waveguide ring-shape bridge |
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