CN104793461A - Mask plate for manufacturing of thin film transistor and thin film transistor manufactured by utilizing mask plate - Google Patents
Mask plate for manufacturing of thin film transistor and thin film transistor manufactured by utilizing mask plate Download PDFInfo
- Publication number
- CN104793461A CN104793461A CN201510187534.4A CN201510187534A CN104793461A CN 104793461 A CN104793461 A CN 104793461A CN 201510187534 A CN201510187534 A CN 201510187534A CN 104793461 A CN104793461 A CN 104793461A
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- China
- Prior art keywords
- film transistor
- mask plate
- thin film
- straight way
- gap
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 238000005452 bending Methods 0.000 claims abstract description 11
- 238000005516 engineering process Methods 0.000 description 5
- 239000010408 film Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention discloses a mask plate for manufacturing of a thin film transistor. The mask plate comprises a bent part (10) and straight parts (20), wherein the straight parts (20) are respectively positioned on two sides of the bent part (10); a first seam (12) between the bent part (10) and the straight parts (20) is semi-transparent; the second seams (22) inside the straight parts (20) are full-transparent. Compared with the prior art, the mask plate provided by the invention has the advantages that as the first seam is semi-transparent, and the width of the first seam is increased, the problems that source and drain electrodes are in short circuit and the like in the bending areas of trenches of the thin film transistor by increasing the light transparency rate of the first seam at the bent part when the thin film transistor is manufactured can be solved, and the trench structure of the thin film transistor can be patterned more precisely.
Description
Technical field
The invention belongs to display technique field, specifically, relate to a kind of mask plate making thin film transistor (TFT) and the thin film transistor (TFT) made of this mask plate.
Background technology
In flat display field, thin film transistor (TFT) is the Primary Component making display device.Higher requirement has been had in the market to the response speed of display device and display quality, in order to realize better display quality, need constantly to improve thin film transistor (TFT) (Thin Film Transistor, be called for short TFT) characteristic, general employing improves the method for film characteristics and semiconductor material, but its cost of manufacture requires higher.In order to make TFT have better device property, reduce channel width also one of trend becoming research of TFT.At present, for forming more accurate channel dimensions, SSM (Single Slit Mask, single slit mask plate) mode is often used to reach the TFT raceway groove of volume production channel width less (such as less than 4 μm).And in order to obtain better TFT characteristic, when adopting SSM mode, easily occur bad in the bending region of TFT raceway groove.
As shown in Figure 1, in the TFT raceway groove utilizing existing SSM to make, TFT raceway groove comprises straight way region A and bending region B, and the width of the two is L.In order to obtain the TFT raceway groove that width L is 3.0 ~ 3.5 μm, bending region B is when exposing due to the problem of exposure mechanism degree, and after making patterning processes, the source-drain electrode in bending region B very easily produces the bad problems such as short circuit.
As can be seen here, although the TFT utilizing SSM to make can improve the characteristic of TFT to a certain extent, if but when needs acquisition TFT channel width is below 4 μm, the TFT raceway groove caused due to the problem of exposure mechanism degree is bad, the situation of even short circuit, can make the serious downslide of yields appearance of the TFT of making, such problem is target and the direction that current correlative study work must make great efforts breakthrough.
Summary of the invention
In order to solve above-mentioned prior art Problems existing, the object of the present invention is to provide a kind of mask plate making thin film transistor (TFT), described mask plate comprises kink and lays respectively at the straight way portion of described kink both sides, it is characterized in that, the first gap between described kink and described straight way portion is set to semi-transparent, and the second gap of inside, described straight way portion is set to full impregnated light.
Further, below or the top in described first gap are provided with semi-permeable diaphragm, and described semi-permeable diaphragm covers described first gap.
Further, the width in described first gap is greater than the width in described second gap.
Further, described straight way portion comprises: two the first sub-portions of straight way and the sub-portion of the second straight way, wherein, described two the first straight way subdivisions are not stretched out by the side up and down of described kink and are formed, and the described second sub-portion of straight way is arranged between described two the first sub-portions of straight way.
Further, described second gap is formed between the described first sub-portion of straight way and the described second sub-portion of straight way.
Another object of the present invention is also to provide a kind of thin film transistor (TFT), and the raceway groove of described thin film transistor (TFT) utilizes above-mentioned mask plate to be made.
Further, the width in the bending region of described raceway groove is equal with the width in the straight way region of described raceway groove.
Beneficial effect of the present invention: compared to prior art, because the first gap of mask plate of the present invention is set to semi-transparent, and the width in the first gap increases, thus when making thin film transistor (TFT), the light that can improve first gap at kink place through rate to avoid the bad problems such as the source-drain electrode short circuit that occurs in the bending region of the raceway groove of thin film transistor (TFT), simultaneously can the channel structure of patterned film transistor more accurately.
Accompanying drawing explanation
The following description carried out in conjunction with the drawings, the above-mentioned and other side of embodiments of the invention, feature and advantage will become clearly, in accompanying drawing:
Fig. 1 shows the structural representation of the raceway groove of the thin film transistor (TFT) utilizing single slit mask plate of prior art to make;
Fig. 2 shows the schematic top plan view of the mask plate making thin film transistor (TFT) according to an embodiment of the invention;
Fig. 3 shows the schematic side view of the mask plate making thin film transistor (TFT) according to an embodiment of the invention.
Embodiment
Below, embodiments of the invention are described in detail with reference to the accompanying drawings.But, the present invention can be implemented in many different forms, and the present invention should not be interpreted as being limited to the specific embodiment of setting forth here.On the contrary, provide these embodiments to be to explain principle of the present invention and practical application thereof, thus enable others skilled in the art understand various embodiment of the present invention and be suitable for the various amendments of certain expected application.In the accompanying drawings, in order to know device, exaggerate the thickness in layer and region, identical label can be used to represent identical element in whole instructions with accompanying drawing.
Cause because easily there is short-channel effect (i.e. the short circuit of TFT raceway groove) problem that productive rate is too low, yields is not enough in order to eliminate in the current TFT utilizing existing SSM to make, the invention provides a kind of mask plate for the preparation of thin film transistor (TFT).
Fig. 2 shows the schematic top plan view of the mask plate making thin film transistor (TFT) according to an embodiment of the invention.Fig. 3 shows the schematic side view of the mask plate making thin film transistor (TFT) according to an embodiment of the invention.
With reference to Fig. 2, the mask plate 100 making thin film transistor (TFT) according to an embodiment of the invention comprises kink 10 and lays respectively at the straight way portion 20 of kink 10 both sides.
In the present embodiment, each straight way portion 20 comprises two the first sub-portions of straight way 201 and the sub-portion 202 of the second straight way, wherein, two the first sub-portions 201 of straight way are stretched out by the side up and down of kink 10 respectively and are formed, and the second sub-portion of straight way 202 is arranged between two the first sub-portions 201 of straight way.Between the second sub-portion of straight way 202 and the sub-portion 201 of the first straight way, and the sub-portion of the second straight way 202 and form the gap passed for light between the sub-portion 201 (i.e. straight way portion 20) of the first straight way and kink 10.
Particularly, form (namely each straight way portion 20 is inner) between the first sub-portion of straight way, gap 12, first 201 and the sub-portion 202 of the second straight way between kink 10 and the sub-portion 202 of the second straight way and form the second gap 22.The present embodiment combines SSM technology and HTM (Half Tone Mask, half-tone mask plate) technology, adopts HTM technology to be set in the first gap 12 between kink 10 and the sub-portion of the second straight way 202 semi-transparent; Meanwhile, SSM technology is adopted to be set to full impregnated light in the second gap 22 between the first sub-portion of straight way 201 and the sub-portion 202 of the second straight way.
Particularly, in conjunction with reference accompanying drawing 3, in an embodiment of the present invention, the below in the first gap 12 between kink 10 and the sub-portion 202 of the second straight way arranges semi-permeable diaphragm 30, this semi-permeable diaphragm 30 covers the first gap 12, thus makes the first gap 12 between kink 10 and the sub-portion of the second straight way 202 be set to semi-transparent.
Should be understood that, in other embodiments of the invention, semi-permeable diaphragm 30 also can be arranged on the top in the first gap 12 between kink 10 and the sub-portion 202 of the second straight way.That is, in the present invention, as long as utilize semi-permeable diaphragm 30 to cover the first gap 12 and make the first gap 12 in semi-transparent state.
Further, in the present embodiment, the width in the first gap 12 between kink 10 and the sub-portion 202 of the second straight way is L ', the width in the second gap 22 between the first sub-portion of straight way 201 and the sub-portion 202 of the second straight way is L, L ' is greater than L, and namely the width in the first gap 12 is greater than the width in the second gap 22.Like this, the light at the first gap 12 place can further be improved through rate.
In the raceway groove of the thin film transistor (TFT) utilizing mask plate 100 according to an embodiment of the invention to make, the width in the width in the bending region of raceway groove and the straight way region of raceway groove is L, and the width namely bending region equals the width in straight way region.
Compared to prior art, because the first gap 12 of mask plate 100 is according to an embodiment of the invention set to semi-transparent, and the width in the first gap 12 increases, thus when making thin film transistor (TFT), the light that can improve first gap 12 at kink 10 place through rate to avoid the bad problems such as the source-drain electrode short circuit that occurs in the bending region B of the raceway groove of thin film transistor (TFT), simultaneously can the channel structure of patterned film transistor more accurately.
Although illustrate and describe the present invention with reference to specific embodiment, but it should be appreciated by those skilled in the art that: when not departing from the spirit and scope of the present invention by claim and equivalents thereof, the various changes in form and details can be carried out at this.
Claims (7)
1. one kind makes the mask plate of thin film transistor (TFT), described mask plate comprises kink (10) and lays respectively at the straight way portion (20) of described kink (10) both sides, it is characterized in that, the first gap (12) between described kink (10) and described straight way portion (20) is set to semi-transparent, and the second gap (22) that described straight way portion (20) is inner is set to full impregnated light.
2. mask plate according to claim 1, is characterized in that, below or the top of described first gap (12) are provided with semi-permeable diaphragm (30), and described semi-permeable diaphragm (30) covers described first gap (12).
3. mask plate according to claim 1, is characterized in that, the width of described first gap (12) is greater than the width of described second gap (22).
4. the mask plate according to any one of claims 1 to 3, it is characterized in that, described straight way portion (20) comprising: two the first sub-portions of straight way (201) and the sub-portion of the second straight way (202), wherein, described two the first sub-portions of straight way (201) are stretched out by the side up and down of described kink (10) respectively and are formed, and the described second sub-portion of straight way (202) is arranged between described two the first sub-portions of straight way (201).
5. mask plate according to claim 4, is characterized in that, forms described second gap (22) between the described first sub-portion of straight way (201) and the described second sub-portion of straight way (202).
6. a thin film transistor (TFT), is characterized in that, the raceway groove of described thin film transistor (TFT) is made by the mask plate described in any one of claim 1 to 5.
7. thin film transistor (TFT) according to claim 6, is characterized in that, the width in the bending region of described raceway groove is equal with the width in the straight way region of described raceway groove.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510187534.4A CN104793461A (en) | 2015-04-20 | 2015-04-20 | Mask plate for manufacturing of thin film transistor and thin film transistor manufactured by utilizing mask plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510187534.4A CN104793461A (en) | 2015-04-20 | 2015-04-20 | Mask plate for manufacturing of thin film transistor and thin film transistor manufactured by utilizing mask plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104793461A true CN104793461A (en) | 2015-07-22 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510187534.4A Pending CN104793461A (en) | 2015-04-20 | 2015-04-20 | Mask plate for manufacturing of thin film transistor and thin film transistor manufactured by utilizing mask plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104793461A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050142680A1 (en) * | 2003-12-29 | 2005-06-30 | Lg Philips Lcd Co., Ltd. | Method for fabrication liquid crystal display device and diffraction mask therefor |
| KR20070122334A (en) * | 2006-06-26 | 2007-12-31 | 엘지.필립스 엘시디 주식회사 | Fabrication mathod for liquid crystal display device |
| CN101738846A (en) * | 2008-11-17 | 2010-06-16 | 北京京东方光电科技有限公司 | Mask plate and manufacture method thereof |
| CN102655175A (en) * | 2012-04-06 | 2012-09-05 | 京东方科技集团股份有限公司 | TFT (thin film transistor), array base plate, display device and mask plate for preparing TFT |
| CN104267580A (en) * | 2014-09-05 | 2015-01-07 | 京东方科技集团股份有限公司 | Mask plate, array substrate and preparation method thereof, and display device |
-
2015
- 2015-04-20 CN CN201510187534.4A patent/CN104793461A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050142680A1 (en) * | 2003-12-29 | 2005-06-30 | Lg Philips Lcd Co., Ltd. | Method for fabrication liquid crystal display device and diffraction mask therefor |
| KR20070122334A (en) * | 2006-06-26 | 2007-12-31 | 엘지.필립스 엘시디 주식회사 | Fabrication mathod for liquid crystal display device |
| CN101738846A (en) * | 2008-11-17 | 2010-06-16 | 北京京东方光电科技有限公司 | Mask plate and manufacture method thereof |
| CN102655175A (en) * | 2012-04-06 | 2012-09-05 | 京东方科技集团股份有限公司 | TFT (thin film transistor), array base plate, display device and mask plate for preparing TFT |
| CN104267580A (en) * | 2014-09-05 | 2015-01-07 | 京东方科技集团股份有限公司 | Mask plate, array substrate and preparation method thereof, and display device |
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| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150722 |