CN104793120B - The measurement structure of silicon hole electrical characteristics is measured based on De- embedding method - Google Patents
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Abstract
The invention discloses a kind of measurement structure that silicon hole electrical characteristics are measured based on De- embedding method.For Two-port netwerk and multiport interconnection architecture, isolation TSV structure is disposed with the perpendicular bisector of signal and ground the TSV structure line of centres to be measured of the same side, isolation TSV structure is used for the electromagnetic coupled isolated between vertical TSV structure to be measured and the bottom surface RDL conductors of level, is mainly made up of spaced apart metal silicon hole post；Isolation TSV structure is the combination that inner side isolation TSV structure or inner side isolation TSV structure and outside isolate both TSV structures.It is of the invention completely compatible with existing silicon hole production technology, it is suitable for being measured by the experimental test procedures of De- embedding the electromagnetic property of microwave, millimere-wave band silicon hole, substantially increase certainty of measurement compared with traditional measuring method, microwave, millimere-wave band three-dimensional structure fields of measurement by with huge application value.
Description
Technical field
The present invention relates to a kind of measurement structure of integrated circuit silicon hole, more particularly, to microwave, millimere-wave band device
A kind of measurement structure that silicon hole electrical characteristics are measured based on De- embedding method of part testing field, weakens silicon hole and connected
The coupled noise of horizontal connector line, and then significantly improve De- embedding method measurement electrical characteristics precision.
Background technology
The multi-chip framework of the design of mainstream integrated circuit, including Intel at present, continuity is still traditional two dimension
Flat system framework, but as the characteristic size of transistor constantly reduces, the bottleneck effect of interconnection line performance, and Moore's Law
Restriction to dimension limit, calls a kind of appearance of new IC system framework, to fully demonstrate the vertical of its solid
Yardstick --- here it is three dimensional integrated circuits.Three dimensional integrated circuits technology, it has also become held for a long time in internationally recognized microelectronics industry
The key cutting edge technology of supervention exhibition, and through-silicon via structure is used as its core technology, the even more focus as international research.
Microwave, the electrical characteristics of millimere-wave band silicon hole have important influence for the performance of three dimensional integrated circuits, and make
It is a kind of vertical stratification, the electrical characteristics of silicon hole cannot directly be measured by the single side probe for commonly using at present, therefore
Substantial amounts of experimental work is launched in the structure of " vertical-level-is vertical ", by changing horizontal structure length, repeatedly
The electrical characteristics of total are measured, or measures the electrical characteristics of total and the electrical characteristics of horizontal structure, so it is embedding by going
Enter the electrical characteristics that method tries to achieve vertical silicon hole.
The present invention is based on De- embedding method, it is advantageous that only needing to measure on the same plane, and need not survey
Measure single horizontal connector structure.
If the electrology characteristic transmission matrix of tested vertical stratification silicon hole for no reason at all is [X]T, scattering coefficient matrix is [X]S；Bottom
Portion's level connection joint line electrology characteristic transmission matrix is [R]T, scattering coefficient matrix is [R]S；Overall structure electrology characteristic transmission matrix
It is [DUT]T, scattering coefficient matrix is [DUT]S.In actually measurement, the bottom level connecting line of multigroup different length is set, its
Length is respectively 500 μm, 1000 μm and 2000 μm etc..Different according to length, the parameter of its electrology characteristic should have following relation：
[R]T,2000μm=[R]T,1000μm 2=[R]T,500μm 4 (1)
For the overall structure of different length, following relation should be ideally met,
[DUT]T=[X]T×[R]T×[X]T (2)
Integrally-built scattering coefficient matrix [DUT]SCan be obtained by probe station and vector network analyzer direct measurement
Go out.Two port scattering matrix [T] and transmission matrix [S] corresponding relation are following (omitting four ports),
Therefore [DUT] of multigroup lengthTCan be by the amount that direct measurement is obtained.Vertical stratification silicon hole to be measured is at this
It is to maintain constant in a little overall structures, therefore can be derived from formula (1) (2)：
Multigroup length can draw multigroup measurement result, and more accurate result can be obtained using least square method.But
The method is the ideal conditions based on formula (2), i.e., vertical interconnection is independent of each other with horizontal connector, and respective electricity is special after the two connection
Property keep constant, but in microwave, millimeter wave frequency band, the two stronger electromagnetic coupled causes that they cannot keep respective electrical characteristics
Constant, this condition cannot meet, and then considerably increase the error of whole method, as shown in Figure 1.
Thus, there is very strong electromagnetic coupled between microwave, millimeter wave frequency band, vertical silicon hole and horizontal connector structure,
They influence each other, and considerably increase the error of the above method.
The content of the invention
For the coupling how weakened between vertical through hole and horizontal connector line, improve De- embedding measuring method precision this
Above mentioned problem, the present invention proposes a kind of measurement structure that silicon hole electrical characteristics are measured based on De- embedding method, it is adaptable to two-port
And multiport, the precision of measurement can be greatly improved.
The technical solution adopted for the present invention to solve the technical problems：
TSV structure to be measured that the present invention is connected including silicon substrate, bottom surface RDL conductor, by bottom surface RDL conductors, projection and
Test pin, TSV structure to be measured is constituted by being symmetrically distributed in two groups of both sides silicon hole posts to be measured, and TSV structure to be measured includes letter
Number TSV structure to be measured and ground TSV structure to be measured, it is characterised in that：For Two-port netwerk and multiport interconnection architecture, the letter of the same side
Isolation TSV structure, isolation TSV knots are disposed with the perpendicular bisector of number TSV structure to be measured and ground the TSV structure line of centres to be measured
Structure is used for the electromagnetic coupled isolated between vertical TSV structure to be measured and the bottom surface RDL conductors of level, and isolation TSV structure is main
It is made up of spaced apart metal silicon hole post；Isolation TSV structure is that inner side isolates TSV structure or inner side isolation TSV structure
And outside isolates the combination of both TSV structures, inner side isolation TSV structure is located at interconnection inner side, and outside isolation TSV structure is located at mutual
Connection outside.
Top surface is provided with top substrate insulating barrier on described silicon substrate, is set between silicon substrate bottom surface and bottom surface RDL conductors
There is base substrate insulating barrier, isolate the metal silicon hole post insertion silicon substrate of TSV structure, the upper and lower top of silicon substrate is not entered
In insulated substrate layer and base substrate insulating barrier.
Preferably, described signal TSV structure to be measured and ground TSV structure line of centres midpoint to be measured with from TSV to be measured
The distance between nearest metal silicon hole post center of structure more than TSV structure to be measured silicon hole post single to be measured with isolate
The radius sum of the single metal silicon hole post of TSV structure.
Preferably, the gap between described adjacent metal silicon hole post is straight more than or equal to metal silicon hole post
Footpath.
Oxidation insulating layer is provided between the metal silicon hole post and substrate of described isolation TSV structure.
The metal silicon hole of described isolation TSV structure can using work function and the close metal of silicon, isolation TSV structure with
Ohmic contact layer is formed between silicon substrate.
Preferably, the metal silicon hole post of described isolation TSV structure is using metals, metal silicon hole post such as gold, platinum
Ohmic contact layer is formed between silicon substrate.
Heavy doping, shape between metal silicon hole post and silicon substrate are carried out to silicon substrate around the isolation TSV structure
Into ohmic contact layer.
Isolation TSV structure of the invention has three kinds of structure situations, oxidation insulating layer is provided with respectively, using work function and silicon
Close metal and using common metal but introduce heavily doped layer, after both without oxide layer, three kinds of structures are typically different
When use.Remove the effect of oxide layer more preferably, but cost is higher.
What the present invention had has the advantages that：
The present invention is hung down in weakening fundamental measurement structure " vertical-level-is vertical " by increasing insulated column in silicon, significantly
Electromagnetic coupled between straight silicon hole and the interconnection line of level, while controlling insulated column between the silicon hole of transmission signal
The density of distance and insulated column so that the influence of electromagnetic property of the insulated column for vertical stratification and horizontal structure in itself is very
It is small, and then the electromagnetic property of silicon hole can be accurately tried to achieve by the method for testing of De- embedding.
The present invention is it is contemplated that the preferable condition set up of De- embedding method, appropriate addition isolation silicon hole so that bar
Part makes De- embedding method for the error reduction dozens of percentage of the transmission characteristic of two-port network closer to ideal situation
Point, and respectively reduce several tens of percents for the error that four port networks, its transmission characteristic and distal end couple.
Brief description of the drawings
Fig. 1 is the parasitic parameter principle schematic of the prior art problem that the present invention is directed to.
Fig. 2 is measurement structure principle schematic of the present invention.
Fig. 3 is structural representation of the present invention for dual-port.
Fig. 4 is structural representation of the present invention for four ports.
Fig. 5 is top view of the present invention using unilateral shielding.
Fig. 6 is front view of the present invention using unilateral shielding.
Fig. 7 is top view of the present invention using two side shields.
Fig. 8 is the partial enlarged drawing of the isolation TSV structure with oxide protective layer in Fig. 5.
Fig. 9 is the partial enlarged drawing of the isolation TSV structure with heavily doped layer in Fig. 5.
Figure 10 is the near-end comparing result schematic diagram of four port organizations using Fig. 4 in embodiment.
The distal end comparing result schematic diagram of four port organizations of Fig. 4 is used in Figure 11 embodiments.
In figure：1st, silicon substrate, 2, bottom surface RDL conductors, 3, signal TSV structure to be measured, 4, raised (Via), 5, inner side isolation
TSV structure, 6, test pin (Pads), 7, oxidation insulating layer, 8, top substrate insulating barrier, 9, base substrate insulating barrier, 10, outer
Side isolates TSV structure, 11, ohmic contact layer, 12, TSV structure to be measured.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and examples.
As shown in Fig. 2 measurement structure of the present invention includes silicon substrate 1, bottom surface RDL (Redistribution Layer, then cloth
Line layer) conductor 2, TSV to be measured (Through Silicon Via, TSV) structure, 4 and of projection by the connection of bottom surface RDL conductor 2
Test pin 6, TSV structure to be measured is constituted by being symmetrically distributed in two groups of both sides silicon hole posts to be measured, and TSV structure to be measured includes letter
Number TSV structure to be measured 3 and ground TSV structure 12 to be measured, these structures are made up of metal, and itself and silicon substrate 1 are to pass through
Structure oxidation insulating layer 7, top substrate insulating barrier 8, base substrate insulating barrier 9 these insulating materials are isolated from each other.
As shown in Figure 3,4, for Two-port netwerk and multiport interconnection architecture, the signal TSV structure 3 to be measured of the same side and treat
Isolation TSV structure is disposed with the perpendicular bisector for surveying the line of centres of TSV structure 12, isolation TSV structure is used to isolate vertical
Electromagnetic coupled between the bottom surface RDL conductor 2 of TSV structure to be measured and level, isolation TSV structure is main by spaced apart metal
Silicon hole post is constituted, and all metal silicon hole post both sides are symmetrical, and (left and right sides is between two groups of both sides silicon hole posts to be measured
Center line is symmetrical, i.e. the metal silicon hole column symmetry of inner side isolation TSV structure 5 both sides or outside isolation TSV structure 10 both sides
Metal silicon hole column symmetry, the inner side and outer side TSV on TSV structure to be measured is without symmetrical)；Isolation TSV structure is inner side
Isolation TSV structure 5 or inner side isolation TSV structure 5 and outside isolate the combination of both TSV structures 10, inner side isolation TSV structure
5 are located at interconnection inner side, and outside isolation TSV structure 10 is located at interconnection outside.
The inventive method allows for generating larger electromagnetic coupled between vertical silicon hole and the interconnection line of level,
The error for causing De- embedding method to measure increases, and if weakening the coupling of this part by isolating, then can increase certainty of measurement.
Isolation TSV structure for vertical " signal " TSV to it is horizontal " " the obvious isolation that is coupled between RDL imitates
Really, further, since isolation TSV has certain distance to structure centre to be measured, therefore for treating geodesic structure, just correspond to lining
The characteristic at bottom 1 has been made and has slightly been changed, for treating that geodesic structure electrical characteristics in itself influence very little；At the same time, top surface on silicon substrate 1
It is provided with top substrate insulating barrier 8, base substrate insulating barrier 9 is provided between the bottom surface of silicon substrate 1 and bottom surface RDL conductor 2, isolates
TSV structure insertion silicon substrate 1, not into silicon substrate 1 upper and lower top substrate insulating barrier 8 and base substrate insulating barrier 9,
Therefore the influence of electromagnetic property for horizontal RDL also very little.
The metal silicon hole post of TSV structure of the present invention is not required for being uniformly distributed, in fact, closer to it is to be measured " signal-
Ground " or the region electromagnetic coupled of " signal-ground-signal " TSV are stronger, should on the premise of TSV self characters to be measured are not influenceed
Zone isolation column density is the bigger the better, and can then reduce density away from the region, and the design on density certainly also needs to comprehensive
Close the influence considered to TSV to be measured and medium.
Signal TSV structure 3 to be measured of the present invention and the ground line of centres midpoint of TSV structure 12 to be measured with from TSV structure to be measured most
The distance between near metal silicon hole post center is advisable with the electrical characteristics for not influenceing TSV to be measured, and density is not influenceing substrate 1
Electrical characteristics are advisable, and the silicon hole post single to be measured that at least should be greater than TSV structure to be measured is logical with the single metal silicon for isolating TSV structure
The radius sum of hole post, preferably should close to the silicon hole post single to be measured of TSV structure to be measured with isolate the single of TSV structure
1.5 times of the radius sum of metal silicon hole post.
Diameter of the gap at adjacent metal silicon hole post edge more than or equal to metal silicon hole post.Do not influenceing knot to be measured
On the premise of the electrical characteristics of structure 3, the metal silicon hole column diameter for isolating TSV structure can be big as far as possible, and spacing can be as far as possible
It is small, and whether be uniformly distributed for it and no requirement (NR).
As shown in figure 3, isolation TSV can be arranged only at interconnection inside, but if conditions permit, it is arranged in interconnection
The isolation effect that inside and outside both sides combine can be better, as shown in Figure 4.
As shown in fig. 6, oxidation insulating layer 7 should be provided with around the cylinder of metal silicon hole post.
Preferred metal silicon hole post makes interior metal and outward using work function and the close metal of silicon, such as gold, platinum etc.
Enclose silicon and form Ohmic contact, ohmic contact layer 11 is formed between metal silicon hole post and silicon substrate 1.
Heavy doping preferably is carried out to silicon substrate 1 around metal silicon hole post, interior metal and peripheral silicon is formed
Ohmic contact, forms ohmic contact layer 11 between metal silicon hole post and silicon substrate 1.
Isolate TSV structure 5 and outside isolation TSV structure 10 for inner side, dimensionally, under conditions of process compatible to the greatest extent
May be small；For density, it is advisable close to diameter with edge to edge distance；In position, as shown in figure 5 and figure 7, can be to be measured vertical
A number of inner side isolation TSV structure 5 and outside isolation TSV structure 10 are arranged in the both sides of structure, it is also possible to only as one in Fig. 5
Sample be only placed at connecting line inner side, its position be on signal silicon hole electrical characteristics influence it is negligible under the premise of as far as possible
Close signal silicon hole, the distance of their distance signal TSV do not producing what is significantly affected to signal TSV in concern frequency range
Under the premise of it is as small as possible.Inner side isolation TSV structure 5 can be kept apart with silicon substrate 1 by the way of such as Fig. 8 oxidation insulating layers 7,
Ohmic contact can also will be formed by the way of ohmic contact layer in Fig. 9 11 between measurement structure TSV and silicon substrate 1.
Specific implementation test process of the invention is as follows：
A the electrology characteristic of the TSV structure to be measured on () silicon substrate 1 cannot be straight conveniently by common one side test probe station
Measurement is connect, therefore to be measured the side that test pin 6 is positioned over silicon substrate 1 indirectly using TSV-RDL-TSV multi-segment structures.
B () causes vertical stratification as shown in figure 1, in traditional De- embedding method measurement, do not have the shielding action of structure 5 and 10
Coupled noise is produced and horizontal structure between, so can introduce cross-couplings in the vertical cascade structure of vertical-level-makes an uproar
Sound, this parasitic parameter can make De- embedding method produce larger calculation error.
C () isolation TSV plays a part of to block cross coupling noise as shown in Figure 2.This kind of structure due to being metal material,
And insertion silicon substrate, the cross section of three-dimensional coupling noise is kept apart, significantly block noise route of transmission.With after
It is physically from TSV and transmits cascade structure mutually insulated, therefore it is smaller to treat the electrical characteristics influence of geodesic structure.Work as use
During the measurement structure of Fig. 9 forms, shield effectiveness improves degree more preferably, improves frequency range also bigger.
(d) in the case where isolation TSV is not introduced, using the signal-ground-signal or multi-port structure of indirect measurement
Measurement result differs larger with direct result of calculation.And introduce and isolate after TSV, measurement result is relative with direct result of calculation
Error is substantially reduced.
The present invention is illustrated by taking the full-wave simulation result of four port interconnected structures shown in Fig. 1,2 as an example, selects here
Isolation TSV has used copper, it is therefore desirable to add insulating barrier.
Using four port organizations of Fig. 4 in the embodiment of the present invention, all silicon hole rod structures 3,5,10,12 have 0.5 micro-
Rice thick silicon dioxide oxide layer 7,40 microns of diameter is high 100 microns；The thickness of silicon substrate structure 1 is 100 microns, using electrical conductivity
It is the silicon materials that mix of 10 every meter of Siemens, the oxidated layer thickness of insulating silicon dioxide up and down of silicon substrate is 0.5 micron of thickness；Top
The test pin 6 for pricking probe is the metallic coppers of 2 microns of thickness, 50 microns of width, and the thickness of bottom surface RDL conductor 2 is also 2 microns, width
It is 50 microns；A diameter of 35 microns of projection 4, thickness is 0.5 micron as silicon dioxide insulating layer；Signal TSV3 to be measured and ground
TSV12 centers to be measured spacing is 100 microns；Signal TSV structure 3 to be measured and the ground line of centres midpoint of TSV structure 12 to be measured with from
The distance between the nearest metal silicon hole post 5 of TSV structure to be measured or 10 centers are 60 microns；Adjacent inner side isolation metallic silicon
The center spacing of through hole post 5 is 80 microns, and it is 80 microns that adjacent outside isolates the center spacing of metallic silicon through hole post 10.
Use the near-end coupled characteristic that four port organizations of Fig. 4 are obtained near with what conventional method was obtained in the embodiment of the present invention
As shown in Figure 10, distal end coupled characteristic is obtained the comparing result of end coupled characteristic and preferable near-end coupled characteristic with conventional method
The comparing result of distal end coupled characteristic and preferable distal end coupled characteristic as shown in figure 11, is tied with for " signal-ground-signal " to be measured
On the basis of the simulation result of structure, for traditional structure, due to there is larger vertical-level-vertical coupled noise, its transmission
Characteristic and the traditional measurement result of distal end coupled characteristic are poor, and the precision of De- embedding algorithm is relatively low, and after adding isolation TSV,
Under the premise of the electrical characteristics influence of the RDL structures on TSV structure to be measured and level in itself is less, weaken the coupling between them
Close, so that the larger computational accuracy for improving transmission characteristic and distal end coupled characteristic.Due to isolation TSV introduce it is extra
Insulating barrier, it is therefore desirable to which in higher frequency band, such as 10~30GHz frequency ranges of this example concern could preferably embody the structure
Isolation effect.
As can be seen here, using measurement structure of the present invention, the introducing of TSV structure is isolated for TSV structure to be measured and level
RDL structures characteristic in itself influence it is smaller but larger weaken the coupling of the two, therefore substantially increase De- embedding method
Precision, with the significant technique effect of protrusion.
Claims (8)
1. a kind of measurement structure that silicon hole electrical characteristics are measured based on De- embedding method, including silicon substrate（1）, bottom surface RDL conductors
（2）, by bottom surface RDL conductors（2）TSV structure to be measured, the projection of connection（4）And test pin（6）, TSV structure to be measured is by right
Two groups of silicon hole posts to be measured that title is distributed in both sides are constituted, and TSV structure to be measured includes signal TSV structure to be measured（3）It is to be measured with ground
TSV structure（12）, it is characterised in that：
For Two-port netwerk and multiport interconnection architecture, the signal TSV structure to be measured of the same side（3）With ground TSV structure to be measured（12）
Isolation TSV structure is disposed with the perpendicular bisector of the line of centres, isolation TSV structure is used to isolate vertical TSV structure to be measured
With the bottom surface RDL conductors of level（2）Between electromagnetic coupled, isolation TSV structure is main by spaced apart metal silicon hole post
Constitute, all metal silicon hole post both sides are symmetrical；Isolation TSV structure is that inner side isolates TSV structure（5）Or inner side isolation TSV
Structure（5）Isolate TSV structure with outside（10）Both combinations, inner side isolation TSV structure（5）Positioned at interconnection inner side, lateral septal
From TSV structure（10）Positioned at interconnection outside.
2. a kind of measurement structure that silicon hole electrical characteristics are measured based on De- embedding method according to claim 1, its feature exists
In：Described silicon substrate（1）Upper top surface is provided with top substrate insulating barrier（8）, silicon substrate（1）Bottom surface and bottom surface RDL conductors（2）
Between be provided with base substrate insulating barrier（9）, isolate the metal silicon hole post insertion silicon substrate of TSV structure（1）, do not enter silicon substrate
（1）Upper and lower top substrate insulating barrier（8）With base substrate insulating barrier（9）In.
3. it is according to claim 1 and 2 it is a kind of based on De- embedding method measure silicon hole electrical characteristics measurement structure, its feature
It is：Described signal TSV structure to be measured（3）With ground TSV structure to be measured（12）Line of centres midpoint with from TSV structure to be measured most
The distance between near metal silicon hole post center more than TSV structure to be measured silicon hole post single to be measured with isolate TSV structure
Single metal silicon hole post radius sum.
4. it is according to claim 1 and 2 it is a kind of based on De- embedding method measure silicon hole electrical characteristics measurement structure, its feature
It is：Diameter of the gap more than or equal to metal silicon hole post between the adjacent metal silicon hole post.
5. it is according to claim 1 and 2 it is a kind of based on De- embedding method measure silicon hole electrical characteristics measurement structure, its feature
It is：The metal silicon hole post and silicon substrate of described isolation TSV structure（1）Between be provided with oxidation insulating layer（7）.
6. it is according to claim 1 and 2 it is a kind of based on De- embedding method measure silicon hole electrical characteristics measurement structure, its feature
It is：The metal silicon hole post of described isolation TSV structure isolates TSV structure and silicon using work function and the close metal of silicon
Substrate（1）Between form ohmic contact layer（11）.
7. a kind of measurement structure that silicon hole electrical characteristics are measured based on De- embedding method according to claim 6, its feature exists
In：Described work function is gold or platinum, metal silicon hole post and silicon substrate with the close metal of silicon（1）Between formed ohm connect
Contact layer（11）.
8. it is according to claim 1 and 2 it is a kind of based on De- embedding method measure silicon hole electrical characteristics measurement structure, its feature
It is：To silicon substrate around the isolation TSV structure（1）Carry out heavy doping, metal silicon hole post and silicon substrate（1）Between
Form ohmic contact layer（11）.
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|---|---|---|---|---|
| US7427803B2 (en) * | 2006-09-22 | 2008-09-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electromagnetic shielding using through-silicon vias |
| CN101447479A (en) * | 2007-11-26 | 2009-06-03 | 台湾积体电路制造股份有限公司 | Structures for preventing cross-talk between through-silicon vias and integrated circuits |
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| US8227889B2 (en) * | 2008-12-08 | 2012-07-24 | United Microelectronics Corp. | Semiconductor device |
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