CN104792583A - Preparation method of TEM sample - Google Patents
Preparation method of TEM sample Download PDFInfo
- Publication number
- CN104792583A CN104792583A CN201410022539.7A CN201410022539A CN104792583A CN 104792583 A CN104792583 A CN 104792583A CN 201410022539 A CN201410022539 A CN 201410022539A CN 104792583 A CN104792583 A CN 104792583A
- Authority
- CN
- China
- Prior art keywords
- object construction
- preparation
- sample
- tem sample
- ion beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
The invention provides a preparation method of a TEM sample. According to the preparation method, low-current L-shape or U-shape cutting is firstly carried out on a target structure in a suspended film structure at the top of an MEMS sample by the use of a low-energy ion beam; then, the target structure is cut off from the suspended film structure through adhering by a probe of a nano-manipulation instrument; and finally, the target structure is transferred onto a copper bracket by an in situ adsorption mode to undergo fine-polishing and thinning. According to the invention, damage to the target structure is reduced to the maximum and integrity of a sample is guaranteed to the maximum during the whole sample preparation process; consistency of angle of the target structure when taken out with angle of the target structure in the suspended film structure is guaranteed, and observation result accuracy of the target structure is greatly enhanced; and in comparison with an existing TEM sample preparation process of MEMS by firstly transferring a suspended film onto a Si sheet and then preparing a sample, the method provided by the invention is simple and easy to operate so as to save preparation time of samples.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to the sample preparation methods field of TEM.
Background technology
TEM(Transmission Electron Microscope, transmission electron microscope) be become the pattern of the film of device, size and feature extremely important instrument for test set in semiconductor manufacturing industry, it is using high-power electron beam as light source, lens are made with electromagnetic field, by the e-beam projection through accelerating and assemble on very thin sample, atom in electronics and sample changes direction because of collision, thus produces solid angle scattering.The size of scattering angle and the density of sample, thickness are relevant, therefore can form the different image of light and shade.An outstanding advantages of TEM has higher resolution, the pattern of the very thin film of Observable and size.
Sample preparation is a very important ring in tem analysis technology, but due to the penetration power of electron beam very weak, the sample therefore for TEM must be prepared into the ultra-thin section that thickness is about 0.1 μm.Sample to be cut into so thin section, need in many situations to use FIB(Focus Ion Beam, focused ion beam) cut.
The preparation method of existing TEM sample, as shown in Fig. 1 a to Fig. 1 d, comprises the following steps:
1) provide one containing the sample 11 of object construction 10, use FIB bombarding formation groove 12 with object construction 10 respectively at a distance of the symmetrical region up and down of about 2 μm, as shown in Figure 1a.
2) with FIB respectively symmetrically in rough lumber two grooves near the sidewall sections of object construction 10, make the thickness of sample be reduced to about 1 μm, then cut out U-shaped opening 13 that transverse opening and two longitudinal openings be combined to form as shown in Figure 1 b.
3) with the sidewall near object construction 10 in the thinning groove 12 of FIB fine polishing, until the final thickness comprising the sample of object construction 10 reaches about 0.1 μm, to meet the requirement as the thickness of TEM sample, as illustrated in figure 1 c.
4) cut off the coupling part of sample and substrate, obtained TEM sample transferred on a copper stent 14, described TEM sample and copper stent 14 are linked together by the platinum of deposition or tungsten 15, in order to observation, as shown in Figure 1 d.
Along with the development of SIC (semiconductor integrated circuit) Micrometer-Nanometer Processing Technology and ultraprecise Machining Technology, MEMS(Micro ElectroMechanical Systems, MEMS (micro electro mechanical system)) technology also makes rapid progress.Owing to there being the existence of a lot of suspending film in MEMS, bring larger challenge to the preparation of the TEM sample of this class formation.In existing TEM sample preparation technology, if want the suspending film structure observing the MEMS the superiors, this suspending film structure must be tamped by filler before preparation TEM sample, but because the closeness of MEMS structure is very large, consider its capillary effect simultaneously, make this filling be very difficult to realize.If do not fill this suspending film structure and directly adopt existing TEM sample preparation method to prepare MEMS sample, in the FIB preparation process of sample, high-octane ion beam can cause damage to suspending film, in whole Sample Preparation Procedure, be difficult to the integrality ensureing sample, and then greatly affect the accuracy of sample observed result.
Prepared by the TEM sample for MEMS structure, also transferred on the empty sheet of Si after can first making the suspending film of MEMS and Matrix separation in prior art, then re-use existing preparation technology to prepare, but in the method, suspending film will draw transfer by dystopy, the consistance of the angle being so just difficult to ensure that object construction takes out and the angle in matrix, have impact on the accuracy of object construction observed result greatly.
Summary of the invention
The shortcoming of prior art in view of the above, the object of the present invention is to provide a kind of preparation method of TEM sample, the problem of the MEMS sample with suspending film is difficult to prepare for solving existing TEM sample technology of preparing, namely for solving before employing conventional method prepares TEM sample, carry out filling to the MEMS sample with suspending film structure to be very difficult to realize, and when this suspending film structure not filled and directly adopt conventional TEM sample preparation method to prepare MEMS sample, in the FIB preparation process of sample, high-octane ion beam can cause damage to suspending film, the integrality ensureing sample is difficult in whole Sample Preparation Procedure, and then greatly affect the problem of accuracy of sample observed result, and transferred on the empty sheet of Si after first making the suspending film of MEMS and Matrix separation, then re-use existing preparation technology in the process preparing TEM sample, suspending film will draw transfer by dystopy, the conforming problem of the angle being so just difficult to ensure that object construction takes out and the angle in matrix.
For achieving the above object and other relevant objects, the invention provides a kind of preparation method of TEM sample, described method at least comprises:
1) provide a MEMS sample, described MEMS sample comprises matrix and is positioned at the suspending film structure that matrix is connected with matrix phase;
2) L-type or U-shaped cutting are carried out to the object construction in described suspending film structure;
3) the bonding described object construction of probe of nano-manipulation instrument is used;
4) junction of object construction and suspending film structure is cut off;
5) object construction obtained after step 4) is transferred on a copper stent, and it is thinning to carry out fine polishing to object construction, obtains required TEM sample.
Preferably, step 2) in use ion beam L-type or U-shaped cutting are carried out to described object construction.
Preferably, step 2) described in use the line of ion beam to be less than 100pA.
Preferably, step 2) described in after object construction carries out L-type or U-shaped cutting, still ensure that it has one side to be connected with suspending film structure.
Preferably, probe described in step 3) passes through the target and mode structural bond of platinum or tungsten deposition together.
Preferably, ion beam is used to be cut off the junction of object construction and suspending film structure in step 4).
Preferably, the line of ion beam is used to be less than 100pA described in step 4).
Preferably, in step 5), by the object construction obtained after described step 4), the mode transferred on copper stent is that original position is drawn.
Preferably, ion beam is used to carry out fine polishing to the object construction obtained after described step 4) in step 5) thinning.
Preferably, carry out using the line of ion beam to be 40 ~ 80pA when fine polishing is thinning to the object construction obtained after described step 4) in step 5).
Preferably, the thickness d after the object construction fine polishing obtained after step 4) described in step 5) is thinning is less than or equal to 0.1 μm.
As mentioned above, the preparation method of TEM sample of the present invention, it first uses the ion beam that energy is less to carry out small area analysis L-type or U-shaped cutting to the object construction in MEMS sample topmost suspending film structure, then lower object construction to be cut down from suspending film structure the probe of nano-manipulation instrument is bonding, the mode finally using original position to draw is transferred to, and copper stent to carry out last fine polishing thinning, achieves the TEM sample preparation of the suspending film in MEMS.Use the less ion beam of energy to cut object construction in the present invention, this just reduces the infringement to object construction to greatest extent, ensures the integrality of sample in whole Sample Preparation Procedure to greatest extent; The object construction cut down transfers to by the mode that original position is drawn that copper stent to carry out last fine polishing thinning, this just ensures the consistance of the angle that object construction takes out and the angle in suspending film structure, substantially increases the accuracy of object construction observed result; In the TEM sample preparation process of existing MEMS, first suspending film is transferred to the preparation empty sheet of Si carrying out again sample, the method is simple, greatly saves the preparation time of sample.
Accompanying drawing explanation
Fig. 1 a, Fig. 1 c-1d are shown as the vertical view of preparation method in each step of TEM sample in prior art; Wherein Fig. 1 b is shown as step 2) after along the cut-open view in Fig. 1 a AA ' direction.
Fig. 2 is shown as the process flow diagram of the preparation method of TEM sample of the present invention.
Fig. 3 a to Fig. 3 f is shown as the vertical view of preparation method in each step of TEM sample of the present invention.
Element numbers explanation
10 object constructions
11 samples
12 grooves
13 U-shaped openings
14,24 copper stents
15,25 platinum deposited or tungsten
21 MEMS samples
211 matrixes
212 suspending film structures
22 object constructions
23 probes
26 L-type grooves
27 U-shaped grooves
Final thickness after d object construction fine polishing is thinning
Embodiment
Below by way of specific instantiation, embodiments of the present invention are described, those skilled in the art the content disclosed by this instructions can understand other advantages of the present invention and effect easily.The present invention can also be implemented or be applied by embodiments different in addition, and the every details in this instructions also can based on different viewpoints and application, carries out various modification or change not deviating under spirit of the present invention.
Refer to Fig. 2 to Fig. 3 f, it should be noted that, the diagram provided in the present embodiment only illustrates basic conception of the present invention in a schematic way, though only show the assembly relevant with the present invention in graphic but not component count, shape and size when implementing according to reality is drawn, it is actual when implementing, and the kenel of each assembly, quantity and ratio can be a kind of change arbitrarily, and its assembly layout kenel also may be more complicated.
As shown in Fig. 2 to Fig. 3 f, the invention provides a kind of preparation method of TEM sample, described method at least comprises:
1) provide a MEMS sample 21, described MEMS sample 21 comprises matrix 211 and is positioned at the suspending film structure 212 that matrix is connected with matrix phase;
2) L-type or U-shaped cutting are carried out to the object construction 22 in described suspending film structure 212;
3) the bonding described object construction 22 of probe 23 of nano-manipulation instrument is used;
4) junction of object construction 22 with suspending film structure 212 is cut off;
5) object construction 22 obtained after step 4) is transferred on a copper stent 24, and it is thinning to carry out fine polishing to object construction 22, obtains required TEM sample.
In step 1), refer to S1 step and Fig. 3 a of Fig. 2, provide a MEMS sample 21, described MEMS sample 21 comprises matrix 211 and is positioned at the suspending film structure 212 that matrix 211 is connected with matrix phase.Containing the very high suspending film structure 212 of closeness in the MEMS sample 21 provided, suspending film structure 212 to be suspended on matrix 211 and to have at least any to be connected with matrix 211.
In step 2) in, refer to S2 step and Fig. 3 b to 3c of Fig. 2, L-type or U-shaped cutting are carried out to the object construction 22 in described suspending film structure 212.
Concrete, first select the suspending film structure 212 containing object construction 22, determine the particular location of object construction 22, then L-type or U-shaped cutting are carried out to object construction 22.Concrete, by forming L-type groove 26(as shown in Figure 3 b at the side of object construction 22 certain distance) or U-shaped groove 27(is as shown in Figure 3 c), the degree of depth of L-type groove 26 or U-shaped groove 27 should be more than or equal to the degree of depth of object construction 22 in suspending film structure 212, L-type groove 26 or U-shaped groove 27 should not be too far away with the distance of object construction 22, also should not be too near, too far away from increasing the follow-up fine polishing thinning time, too closely easily hurt object construction 22.Preferably, in the present embodiment, L-type groove 26 or U-shaped groove 27 are about 2 μm with the distance of object construction 22.
Concrete, the mode of object construction 22 being carried out to L-type or U-shaped cutting can be ion beam, in order to improve the degree of accuracy of cutting, preferably, in the present embodiment, use the less ion beam of energy to carry out small area analysis L-type or U-shaped cutting to described object construction 22, the line of the ion beam used during cutting should be less than 100pA.Use the less ion beam of energy to cut object construction 22, this just reduces the infringement to object construction 22 to greatest extent, ensures the integrality of sample in whole Sample Preparation Procedure to greatest extent.
It should be noted that, when cutting object construction 22, should decide as the case may be is the cutting of choice for use L-type, or the U-shaped cutting of choice for use.The foundation carrying out selecting is: after carrying out L-type or U-shaped cutting to object construction 22, still ensures that it has one side to be connected with suspending film structure 212.When object construction 22 is positioned at suspending film structure 212 fringe region time, preferably select L-type cutting, when object construction 22 is positioned at suspending film structure 212 zone line time, preferably select U-shaped cutting.
Need to further illustrate, in the vertical view of actual suspending film structure 212, object construction 22 might not be observed directly, just draw in order to the position of object construction 22 is described here.
In step 3), refer to S3 step and Fig. 3 d of Fig. 2, use the bonding described object construction 22 of probe 23 of nano-manipulation instrument.
Concrete, nano-manipulation instrument is fixed on ion beam cutting machine, nano-manipulation instrument have one can be in rotary moving probe 23, preferably, described probe 23 is glass probe.By rotating, probe 23 is moved to the top of object construction 22, described probe 23 links together with object construction 22 by deposition platinum or tungsten.Object construction 22 is bonded on probe 23, fixing object construction 22 can be realized, prevent it from follow-up cutting process, landing occurring; Object construction 22 and probe 23 are linked together by the platinum that deposits or tungsten 25, in the cutting and transfer process of succeeding target structure 22, effectively can reduce the infringement on probe 23 pairs of object construction 22 surfaces.
In step 4), refer to S4 step and Fig. 3 e of Fig. 2, the junction of object construction 22 with suspending film structure 212 is cut off.
Concrete, example is cut into U-shaped in the present embodiment, this step and step 2) identical, the mode cut off in object construction 22 and the junction of suspending film structure 212 can be ion beam, in order to improve the degree of accuracy of cutting, preferably, use energy less ion beam to be cut off the junction of object construction 22 with suspending film structure 212, the line of the ion beam used during cutting should be less than 100pA.Equally, use the less ion beam of energy to cut object construction 22, be the infringement in order to reduce to greatest extent object construction 22, in whole Sample Preparation Procedure, ensure the integrality of sample to greatest extent.
It should be noted that, in the process of whole cutting, object construction 22 is connected to probe 23 all the time, to prevent it from dropping after cutting completes, causes the damage to object construction 22.
In step 5), refer to S5 step and Fig. 3 f of Fig. 2, the object construction 22 obtained after step 4) is transferred on a copper stent 24, and it is thinning to carry out fine polishing to object construction 22, obtains required TEM sample.
Concrete, the mode transferred to by the object construction obtained after described step 4) on copper stent 24 is that original position is drawn.This transfer process and step 4) complete on same board.First copper stent 24 is placed on step 4) board used, one side of suspending film structure 121, after then object construction 22 being cut down from suspending film structure 212, by traveling probe 23, object construction 22 is transferred on copper stent 24.
It should be noted that, object construction 22 is transferred in the process of a copper stent 24, answer the Angle Position of timely adjustment probe 23, ensure the consistance of the angle that object construction 22 takes out and the angle in suspending film structure 212.
Concrete, object construction 22 is transferred to after on copper stent 24, by the mode of platinum or tungsten deposition, object construction 22 is connected on copper stent 24.Object construction 22 is connected to after on copper stent 24, probe 23 and object construction 22 are cut off from its junction.
The object construction 22 step 4) cut down is transferred on copper stent 24 by the mode that original position is drawn, this just ensures the consistance of the angle that object construction 22 takes out and the angle in suspending film structure 212, substantially increases the accuracy of object construction 22 observed result.
Object construction 22 is connected to after on copper stent 24, thin process of Denging can also be repaiied to object construction 22 as required.Sample for TEM must be prepared into the ultra-thin section that thickness is about 0.1 μm, so it is thinning also to need to carry out fine polishing to object construction 22, carrying out thinning mode to object construction 22 can be ion beam.Because the size of described object construction 22 is smaller, in order to not hurt object construction 22, in the present embodiment, to described object construction 22 carry out fine polishing thinning time use ion beam line be 40 ~ 80pA.
Concrete, because the penetration power of the electron beam of TEM is very weak, the sample therefore for TEM must be prepared into the ultra-thin section that thickness is about 0.1 μm, so the final thickness d after object construction 22 fine polishing is thinning should be less than or equal to 0.1 μm.Preferably, in the present embodiment, the final thickness d after object construction 22 fine polishing is thinning is about 0.1 μm.
In sum, the preparation method of TEM sample of the present invention, it first uses the ion beam that energy is less to carry out small area analysis L-type or U-shaped cutting to the object construction in MEMS sample topmost suspending film structure, then lower object construction to be cut down from suspending film structure the probe of nano-manipulation instrument is bonding, the mode finally using original position to draw is transferred to, and copper stent to carry out last fine polishing thinning, achieves the TEM sample preparation of the suspending film in MEMS.Use the less ion beam of energy to cut object construction in the present invention, this just reduces the infringement to object construction to greatest extent, ensures the integrality of sample in whole Sample Preparation Procedure to greatest extent; The object construction cut down transfers to by the mode that original position is drawn that copper stent to carry out last fine polishing thinning, this just ensures the consistance of the angle that object construction takes out and the angle in suspending film structure, substantially increases the accuracy of object construction observed result; In the TEM sample preparation process of existing MEMS, first suspending film is transferred to the preparation empty sheet of Si carrying out again sample, the method is simple, greatly saves the preparation time of sample.
Above-described embodiment is illustrative principle of the present invention and effect thereof only, but not for limiting the present invention.Any person skilled in the art scholar all without prejudice under spirit of the present invention and category, can modify above-described embodiment or changes.Therefore, such as have in art usually know the knowledgeable do not depart from complete under disclosed spirit and technological thought all equivalence modify or change, must be contained by claim of the present invention.
Claims (11)
1. a preparation method for TEM sample, is characterized in that, comprises the following steps:
1) provide a MEMS sample, described MEMS sample comprises matrix and is positioned at the suspending film structure that matrix is connected with matrix phase;
2) L-type or U-shaped cutting are carried out to the object construction in described suspending film structure;
3) the bonding described object construction of probe of nano-manipulation instrument is used;
4) junction of object construction and suspending film structure is cut off;
5) object construction obtained after step 4) is transferred on a copper stent, and it is thinning to carry out fine polishing to object construction, obtains required TEM sample.
2. the preparation method of TEM sample according to claim 1, is characterized in that: step 2) in use ion beam L-type or U-shaped cutting are carried out to described object construction.
3. the preparation method of TEM sample according to claim 2, is characterized in that: step 2) described in use the line of ion beam to be less than 100pA.
4. the preparation method of TEM sample according to claim 1, is characterized in that: step 2) described in after object construction carries out L-type or U-shaped cutting, still ensure that it has one side to be connected with suspending film structure.
5. the preparation method of TEM sample according to claim 1, is characterized in that: probe described in step 3) passes through the target and mode anatomical connectivity of platinum or tungsten deposition together.
6. the preparation method of TEM sample according to claim 1, is characterized in that: use ion beam object construction and suspending film structural attachments to be cut off in step 4).
7. the preparation method of TEM sample according to claim 6, is characterized in that: use the line of ion beam to be less than 100pA described in step 4).
8. the preparation method of TEM sample according to claim 1, is characterized in that: in step 5), by the object construction obtained after described step 4), the mode transferred on copper stent is that original position is drawn.
9. the preparation method of TEM sample according to claim 1, is characterized in that: use ion beam or electron beam to carry out fine polishing to the object construction obtained after described step 4) in step 5) thinning.
10. the preparation method of TEM sample according to claim 1, is characterized in that: carry out using the line of ion beam to be 40 ~ 80pA when fine polishing is thinning to the object construction obtained after described step 4) in step 5).
The preparation method of 11. TEM sample according to claim 1, is characterized in that: the thickness d after the object construction fine polishing obtained after step 4) described in step 5) is thinning is less than or equal to 0.1 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410022539.7A CN104792583B (en) | 2014-01-17 | 2014-01-17 | A kind of preparation method of TEM sample |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410022539.7A CN104792583B (en) | 2014-01-17 | 2014-01-17 | A kind of preparation method of TEM sample |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104792583A true CN104792583A (en) | 2015-07-22 |
| CN104792583B CN104792583B (en) | 2018-06-26 |
Family
ID=53557573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410022539.7A Active CN104792583B (en) | 2014-01-17 | 2014-01-17 | A kind of preparation method of TEM sample |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104792583B (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105158516A (en) * | 2015-08-20 | 2015-12-16 | 上海华力微电子有限公司 | Preparation method of planar transmission electron microscope sample in integrated circuit analysis |
| CN105865862A (en) * | 2016-03-25 | 2016-08-17 | 江苏省沙钢钢铁研究院有限公司 | Making method of three-dimensional atom probe sample |
| CN106206227A (en) * | 2016-08-02 | 2016-12-07 | 天津理工大学 | A kind of transmission electron microscope sample table load sample district possessing field-effect transistor function |
| CN106556721A (en) * | 2015-09-29 | 2017-04-05 | 中芯国际集成电路制造(上海)有限公司 | Test sample and preparation method thereof |
| CN108717130A (en) * | 2018-05-08 | 2018-10-30 | 清华大学 | Detection device, copper sheet and detection method for fixing AFM probe |
| CN108760417A (en) * | 2018-03-30 | 2018-11-06 | 宜特(上海)检测技术有限公司 | The preparation method of test piece of penetration type electron microscope |
| CN108760438A (en) * | 2018-07-18 | 2018-11-06 | 大连理工大学 | A kind of transmission electron microscope in-situ mechanical stretching sample preparation methods |
| CN111693554A (en) * | 2020-06-10 | 2020-09-22 | 华东师范大学 | Preparation method of TEM sample |
Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001021467A (en) * | 1999-07-08 | 2001-01-26 | Hitachi Ltd | Sample preparing method through use of focusing ion beam and focusing ion beam preparing device |
| WO2002071031A1 (en) * | 2001-03-01 | 2002-09-12 | Moore Thomas M | Total release method for sample extraction from a charged particle instrument |
| CN1598595A (en) * | 2003-09-16 | 2005-03-23 | 财团法人工业技术研究院 | Performance regulating device of inertial sensor |
| CN1715863A (en) * | 2004-07-01 | 2006-01-04 | Fei公司 | Method for the removal of a microscopic sample from a substrate |
| CN1737532A (en) * | 2004-07-01 | 2006-02-22 | Fei公司 | Method for the removal of a microscopic sample from a substrate |
| US20060131269A1 (en) * | 2003-01-31 | 2006-06-22 | Canon Kabushiki Kaisha | Object-moving method, object-moving apparatus and production process using the method |
| CN1871684A (en) * | 2003-09-23 | 2006-11-29 | 塞威公司 | Method, system and device for microscopic examination employing fib-prepared sample grasping element |
| US20070272854A1 (en) * | 2006-05-25 | 2007-11-29 | Enrique Agorio | Sample Preparation |
| CN101520385A (en) * | 2008-02-27 | 2009-09-02 | 中国科学院半导体研究所 | Method for testing mechanical property and reliability of thin film material of micro-electromechanical system (MEMS) and device thereof |
| CN101898745A (en) * | 2009-05-28 | 2010-12-01 | 江苏丽恒电子有限公司 | Mems device and manufacture method thereof |
| CN102200497A (en) * | 2010-03-24 | 2011-09-28 | 国家纳米技术与工程研究院 | Method for preparing powdered test sample for transmission electron microscope |
| CN102346109A (en) * | 2010-07-26 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | Preparation method for semiconductor sample of TEM |
| CN102466578A (en) * | 2010-11-03 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of transmission electron microscope (TEM) sample |
| CN102854048A (en) * | 2012-10-15 | 2013-01-02 | 重庆大学 | Preparation method of transmitting sample with crack tip |
| CN103021802A (en) * | 2011-09-23 | 2013-04-03 | 中芯国际集成电路制造(上海)有限公司 | Production method for detection sample of semiconductor device, and detection sample |
| CN103047947A (en) * | 2012-12-14 | 2013-04-17 | 北京工业大学 | Method for representing nano film micro-area deformation area by virtue of combination of photetching technique and transmitted electron microtechnique |
| CN103308365A (en) * | 2013-06-27 | 2013-09-18 | 上海华力微电子有限公司 | Method for preparing triethylenemelamine (TEM) sample |
-
2014
- 2014-01-17 CN CN201410022539.7A patent/CN104792583B/en active Active
Patent Citations (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001021467A (en) * | 1999-07-08 | 2001-01-26 | Hitachi Ltd | Sample preparing method through use of focusing ion beam and focusing ion beam preparing device |
| WO2002071031A1 (en) * | 2001-03-01 | 2002-09-12 | Moore Thomas M | Total release method for sample extraction from a charged particle instrument |
| US20060131269A1 (en) * | 2003-01-31 | 2006-06-22 | Canon Kabushiki Kaisha | Object-moving method, object-moving apparatus and production process using the method |
| CN1598595A (en) * | 2003-09-16 | 2005-03-23 | 财团法人工业技术研究院 | Performance regulating device of inertial sensor |
| CN1871684A (en) * | 2003-09-23 | 2006-11-29 | 塞威公司 | Method, system and device for microscopic examination employing fib-prepared sample grasping element |
| CN1715863A (en) * | 2004-07-01 | 2006-01-04 | Fei公司 | Method for the removal of a microscopic sample from a substrate |
| CN1737532A (en) * | 2004-07-01 | 2006-02-22 | Fei公司 | Method for the removal of a microscopic sample from a substrate |
| US20070272854A1 (en) * | 2006-05-25 | 2007-11-29 | Enrique Agorio | Sample Preparation |
| CN101520385A (en) * | 2008-02-27 | 2009-09-02 | 中国科学院半导体研究所 | Method for testing mechanical property and reliability of thin film material of micro-electromechanical system (MEMS) and device thereof |
| CN101898745A (en) * | 2009-05-28 | 2010-12-01 | 江苏丽恒电子有限公司 | Mems device and manufacture method thereof |
| CN102200497A (en) * | 2010-03-24 | 2011-09-28 | 国家纳米技术与工程研究院 | Method for preparing powdered test sample for transmission electron microscope |
| CN102346109A (en) * | 2010-07-26 | 2012-02-08 | 中芯国际集成电路制造(上海)有限公司 | Preparation method for semiconductor sample of TEM |
| CN102466578A (en) * | 2010-11-03 | 2012-05-23 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of transmission electron microscope (TEM) sample |
| CN103021802A (en) * | 2011-09-23 | 2013-04-03 | 中芯国际集成电路制造(上海)有限公司 | Production method for detection sample of semiconductor device, and detection sample |
| CN102854048A (en) * | 2012-10-15 | 2013-01-02 | 重庆大学 | Preparation method of transmitting sample with crack tip |
| CN103047947A (en) * | 2012-12-14 | 2013-04-17 | 北京工业大学 | Method for representing nano film micro-area deformation area by virtue of combination of photetching technique and transmitted electron microtechnique |
| CN103308365A (en) * | 2013-06-27 | 2013-09-18 | 上海华力微电子有限公司 | Method for preparing triethylenemelamine (TEM) sample |
Non-Patent Citations (2)
| Title |
|---|
| YUNBO SHI ET AL.: "Optimization of the GaAs-on-Si Substrate for Microelectromechanical Systems (MEMS) Sensor Application", 《MATERIALS》 * |
| 金饮华 等: "用于TEM原位拉伸实验的集成单晶硅纳米梁MEMS测试芯片研究", 《中国科学E辑：技术科学》 * |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105158516A (en) * | 2015-08-20 | 2015-12-16 | 上海华力微电子有限公司 | Preparation method of planar transmission electron microscope sample in integrated circuit analysis |
| CN106556721A (en) * | 2015-09-29 | 2017-04-05 | 中芯国际集成电路制造(上海)有限公司 | Test sample and preparation method thereof |
| CN105865862A (en) * | 2016-03-25 | 2016-08-17 | 江苏省沙钢钢铁研究院有限公司 | Making method of three-dimensional atom probe sample |
| CN105865862B (en) * | 2016-03-25 | 2018-12-14 | 江苏省沙钢钢铁研究院有限公司 | A kind of preparation method of three-dimensional atom probe sample |
| CN106206227A (en) * | 2016-08-02 | 2016-12-07 | 天津理工大学 | A kind of transmission electron microscope sample table load sample district possessing field-effect transistor function |
| CN106206227B (en) * | 2016-08-02 | 2018-01-09 | 天津理工大学 | A kind of transmission electron microscope sample table load sample area for possessing field-effect transistor function |
| CN108760417A (en) * | 2018-03-30 | 2018-11-06 | 宜特(上海)检测技术有限公司 | The preparation method of test piece of penetration type electron microscope |
| CN108760417B (en) * | 2018-03-30 | 2021-03-30 | 苏试宜特(上海)检测技术有限公司 | Preparation method of transmission electron microscope test piece |
| CN108717130A (en) * | 2018-05-08 | 2018-10-30 | 清华大学 | Detection device, copper sheet and detection method for fixing AFM probe |
| CN108760438A (en) * | 2018-07-18 | 2018-11-06 | 大连理工大学 | A kind of transmission electron microscope in-situ mechanical stretching sample preparation methods |
| CN108760438B (en) * | 2018-07-18 | 2020-08-14 | 大连理工大学 | Preparation method of in-situ mechanical tensile sample of transmission electron microscope |
| CN111693554A (en) * | 2020-06-10 | 2020-09-22 | 华东师范大学 | Preparation method of TEM sample |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104792583B (en) | 2018-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104792583A (en) | Preparation method of TEM sample | |
| JP5711204B2 (en) | Methods and apparatus for sample extraction and handling | |
| TWI634331B (en) | System for nanoprobing of electronic devices and nanoprobe thereof | |
| US8884247B2 (en) | System and method for ex situ analysis of a substrate | |
| CN104713767A (en) | TEM sample preparation method | |
| CN104865107B (en) | A kind of preparation method of plane TEM sample | |
| US10101246B2 (en) | Method of preparing a plan-view transmission electron microscope sample used in an integrated circuit analysis | |
| CN103808540B (en) | Transmission electron microscope sample preparation method | |
| CN103913358A (en) | Preparation method and failure analysis method for transmission electron microscope (TEM) sample | |
| CN103196713A (en) | Preparation method of analysis samples | |
| US8729469B1 (en) | Multiple sample attachment to nano manipulator for high throughput sample preparation | |
| JP2007033454A (en) | Dual chip atomic force microscope probe and manufacturing method for it | |
| TWI416091B (en) | Electron microscope specimen and method for preparing the same and method for forming 3d images | |
| CN108010860A (en) | A kind of self-positioning electro-migration testing structure and transmission electron microscope sample preparation method prepared easy to transmission electron microscope sample | |
| CN104344980A (en) | Preparation method of electron microscope scanning sample | |
| CN102646566B (en) | The SEM sample clamp observed for online SEM and SEM sample observation method | |
| CN103267661B (en) | The localization method of SEM/TEM sample | |
| CN104658968A (en) | Method for improving flatness in fixed point grinding process of semiconductor sample | |
| CN106706386A (en) | Preparation method and observation method of transmission electron microscope sample | |
| CN104792585B (en) | Preparation method for TEM sample | |
| CN105300754B (en) | A method of prevent TEM chip sample from rupturing | |
| CN104568530A (en) | Method for preparing TEM sample | |
| CN103913687B (en) | Groove MOS device Dislocations type analysis for current leakage method | |
| KR20060078915A (en) | Manufacturing method of sample for tem analysis | |
| CN105161440A (en) | Fixed-point chemical junction dyeing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |