CN104784814B - Tumour nanosecond pulse electro-therapeutic apparatus - Google Patents
Tumour nanosecond pulse electro-therapeutic apparatus Download PDFInfo
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- CN104784814B CN104784814B CN201510217295.2A CN201510217295A CN104784814B CN 104784814 B CN104784814 B CN 104784814B CN 201510217295 A CN201510217295 A CN 201510217295A CN 104784814 B CN104784814 B CN 104784814B
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Abstract
The invention belongs to a kind of tumour nanosecond pulse electro-therapeutic apparatus, including current transformer（5）, single-chip microcomputer（6）And gas spark switch（3）, it is characterised in that single-chip microcomputer（6）With high voltage direct current source circuit（1）UNICOM, high voltage direct current source circuit（1）With LC resonance circuits（2）UNICOM, LC resonance circuits（2）With gas spark switch UNICOM.The pain that the invention solves operation to oncotherapy, chemicotherapy is brought to patient, does not result in the side effects such as scar, inflammation over the course for the treatment of, at utmost reduces the injury to normal cell.
Description
Technical field
The invention belongs to Medical Devices, more particularly to a kind of tumour nanosecond pulse electro-therapeutic apparatus.
Background technology
The mode of conventional treatment tumour has operation, radiation and chemotherapy at present.If tumour is confined to original site or one
Determine region, local treatment tends to obtain preferable effect, but be diffusion and transfer the characteristics of tumour cell, once occur to turn
Move, relying solely on local treatment cannot.So chemicotherapy would generally be coordinated.But chemicotherapy belongs to whole body therapeutic, killing
Normal cell can also be killed while dead cancer cell, can also produce the side effects such as the unrest of gastrointestinal function wadding, bone marrow suppression, alopecia,
Reduce the life quality of patient.In contrast to this, with the mode of electrotherapy, inducing cell apoptosis meets human homergy's process, together
When maximum Chengdu on reduce the side effect produced in Quality Process, be that mankind's oncotherapy history opens new epoch！
Nanosecond pulse electric field reaches inducing cell apoptosis, suppresses tumor tissues by using endocellular electricity Treatment Effects
The purpose that growth, induced cell cycle change, it is final to cause tumour cell to melt the purpose for reaching treatment automatically.
Cell in human body is doomed to death, and some death are physiologicals, and some are then pathologic.It is dead
Mode have two kinds：Meronecrosis and Apoptosis.Necrosis is that cell is caused cell by strong physics and chemistry or biological factor effect
The death process of unordered change.Show as cell to swell, after birth rupture, cellular content is excessive, and nuclear change is slower, DNA degradation
It is insufficient, cause local serious inflammatory reaction.Apoptosis refers to maintain homeostasis, the cell controlled by gene having independently
The death of sequence.It is a kind of basic biological phenomena of cell, is removed in multicellular organism in unwanted or abnormal cell
Play necessary effect.It plays important work in the development of the evolution of organism, the stabilization of interior environment and multiple systems
With.As can be seen here, Apoptosis is physiopathological sexual stimulus signal of the cell to environment, the change of environmental condition or retentivity
The death process that the response that damage is produced changes in order.It is multistage in morphologic change, Apoptosis is often related to
Individual cells, even sub-fraction cell are also asynchronous generation.Occur that cell volume reduces first, connection disappears
Lose, the cell detachment with surrounding, followed by cytoplasmic densitometric increase, mitochondrial membrane potential disappearance, permeability changes, release cell
Pigment C is to endochylema, and caryoplasm concentration, nuclear membrane kernel is crushed, and DNA degradation turns into about 180bp-200bp fragments；After birth has vesicular shape
Into, film surface is translated into outside phosphatidylserine on the inside of film, after birth structure is still complete, finally can be by apoptotic cell remains segmentation bag
Wrap up in as several apoptotic bodies, no content is excessive, therefore does not cause the inflammatory reaction of surrounding, and apoptotic body can be special by surrounding rapidly
Duty or the phagocytosis of non-full-time phagocyte.
The approach of Apoptosis mainly has two：One be by apoptosis enzyme Caspase in extracellular signal active cell,
Another is by mitochondria release apoptosis enzyme activition factor activator Caspase.And the effect of nanosecond pulsed electric field be mainly to
Extracellular signal is stimulated, and is started with inducing cell apoptosis program, while the stimulating electrical signal of short time will not cause cell bad again
Extremely, it is to avoid cause other adverse reactions of cell, suppression tumor tissue growth and is effectively reached, what induced cell cycle changed
Purpose.
The content of the invention
It is an object of the invention to solve above-mentioned technical problem, there is provided the nanosecond produced by a kind of utilization voltage pulse is timely
To the electric-field intensity of length, film at tumour cell, effect and internal organelle, inducing cell apoptosis, so that thin by phagocytosis are penetrated
Born of the same parents take external tumour nanosecond pulse electro-therapeutic apparatus out of.
The technical proposal for solving the technical problem of the invention is：A kind of tumour nanosecond pulse electro-therapeutic apparatus, including electric current
Transformer, single-chip microcomputer and gas spark switch, it is characterised in that single-chip microcomputer and high-voltage DC power supply circuit communication, high voltage direct current
Source circuit and LC resonance circuits UNICOM, LC resonance circuits and gas spark switch UNICOM；High voltage direct current source circuit includes
NC22OV power supplys are connected with 1,2 pin of KBU8104 rectifier bridges, and 3 pin of KBU8104 rectifier bridges connect capacitor C6 one end and insulated gate
Type FET Q1, Q3 1 pin, 4 pin connect transformer T1 secondary T1-3, T1-5, resistance R25, R29, insulated-gate type field effect
Pipe Q2, Q4 2 pin and capacitor the C6 other end and ground；The transformer T1 termination voltage-regulator diodes of primary coil T1-1 two TVS
Two ends and capacitor C17 one end；Transformer T1 secondary coils T1-4 two ends difference connecting resistance R26, R27 one end and transformation
Device T2 2 pin, resistance R26, R27 another termination insulating gate type field effect tube Q3 3 pin；Transformer secondary coil T1-5 is another
Terminating resistor R28 one end, another termination insulating gate type field effect tube Q4 of resistance R28, R29 3 pin；Transformer T2 secondary coil
T1-2 two ends difference connecting resistance R22, resistance R23 one end；Insulating gate type field effect tube Q2 1 pin meets insulating gate type field effect tube Q1
2 pin, transformer T2 1 pin and resistance the R23 other end；Transformer T2 3 pin connect the resistance R17's in A amplifying circuits U1D
The other end, capacitor C11, C12, resistance R30 and diode D5 one end；Another terminating resistor R30 other ends of capacitor C11 and
Ground；Capacitor C12 another termination multiple diode D3, D4 ... Dn, Dn+1 one end；Transformer T2 4 pin connect capacitor C8's
One end；Capacitor C8 another terminating diode D5, D3 and capacitor C9 one end；Capacitor C9 multiple two poles of another termination
Pipe D4, Dn other end and capacitor C10 one end；Capacitor C10 another terminating diode Dn+1, resistance R31 one end, electricity
Hinder the multiple resistance R32 ~ Rn of R31 series connection；Resistance Rn another terminating resistor R33, capacitor C7 and B amplifying circuit U2D center
Resistance R21 one end；Voltage sampling resistor R33 and capacitor C7 other end ground connection；Negative-feedback B 2 pin connect voltage PID regulator
U1B1-2 7 pin, 3 pin connect variable resistor UR2 3 pin；Variable resistor UR2 1 pin connects+10V power supplys, 2 pin ground connection；Transformer T1
The terminating resistor R22 one end of secondary coil T1-2 mono-, another terminating resistor R23 one end；Insulating gate type field effect tube Q1 2 pin connect
Insulating gate type field effect tube Q2 1 pin and transformer T2 1 pin；Insulating gate type field effect tube Q1 3 pin connecting resistance R22, R23's
The other end；Insulating gate type field effect tube Q2 3 pin connecting resistance K24, R25 other end；Insulating gate type field effect tube Q3 3 pin connect
Resistance R26, R27 one end；Resistance R26, R27 another termination transformer T1 secondary line level circle T1-4 two ends；Insulated-gate type
FET Q4 3 pin connecting resistance R28, R29 one end；Resistance R28, R29 another termination transformer T1 secondary coil T1-
5 two ends；Negative-feedback A 1 pin connects resistance R17 one end in A amplifying circuits U1D；2 pin connect the 1 of electric current PID regulation circuit Us 1A
Pin, 3 pin connect variable resistor VR1 3 pin；Variable resistor VR1 1 pin connects+10V power supplys, 2 pin ground connection；The capacitor C17 other ends and
Transient state killer tube TVS one end is connected with SG3525 chip circuits；SG3525 chip circuits are connected with overvoltage crowbar U2E；
Electric current P1D regulations circuit U 1A is connected with automatic ruling circuit U 1C；Automatic ruling circuit U 1C and voltage P1D adjust circuit U 1B and
Follower circuit U1E connections.
Described A amplifying circuit U1D, are made up of TL064 operational amplifiers U1D and resistance R14, R16, R17, R18；Computing
Amplifier U1D 12 pin connecting resistance R17 one end, 13 pin connecting resistance R18 and R16 one end, 14 pin connecting resistance R14 one end and
The R16 other end；Resistance R18 other end ground connection.
Described B amplifying circuit U2D, are made up of TL064 operational amplifiers U2D and resistance R15, R19, R20；TL064 is transported
The amplifier U2D 12 pin connecting resistance R21 other end is calculated, 13 pin connecting resistance R19, R20 one end, 4 pin meet power supply+VCC, 11 pin
Connect power supply-VCC, 14 pin connecting resistance R15 one end and the resistance R20 other ends；The resistance R19 other ends are grounded.
Described voltage PID regulation circuit U 1B, by TL064 operational amplifiers U1B, capacitor C3, C4 and resistance R5~R8
Composition, TL064 operational amplifiers U1B 7 pin connect capacitor C4 one end and the diode D2 in automatic ruling circuit negative pole, 6
Pin connecting resistance R5, R7 and capacitor C3 one end, 5 pin connecting resistance R8 one end；Resistance R8 another termination SIM32F103 monolithics
The interface of machine；The capacitor C3 another terminating resistor R6 other end；The resistance R5 other ends are connected with the capacitor C4 other ends.
Described electric current PID regulator circuit U 1A, by TL064 operational amplifiers U1A, capacitor C1, C2 and resistance R1~
R4 is constituted, and TL064 operational amplifiers U1A 1 pin connects capacitor C1 one end and the diode D1 in automatic ruling circuit negative pole,
11 pin meet power supply+VCC, and 4 pin connect power supply-VCC, 3 pin connecting resistance R1, R4 and capacitor C3 one end, 2 pin connecting resistance R2 one end；
The interface of resistance R2 another termination SIM32F103 single-chip microcomputers；The capacitor C2 other end is connected with the resistance R3 other ends.
Described automatic ruling circuit U 1C, by TL064 operational amplifiers U1C, diode D1, D2 and resistance R9, R10,
R11 is constituted；TL064 operational amplifiers U1C 8 pin connecting resistance R10 one end and the resistance R12's in SG3525 chip periphery circuits
One end, the positive pole of the 9 pin connecting resistance R10 other ends, resistance R11 one end and two pole D1, D2,10 pin connecting resistance R9 one end；Resistance R9
The other end is grounded；Another termination power-VCC of resistance R11.
Described SG3525 chip periphery circuits, are made up of SG3525 chips U2, resistance R12, R13 and capacitor C5；
SG3525 chips U2 13,15 pin meet power supply+VCC, and the 9 pin connecting resistance R12 other ends, 5,7 pin connect capacitor C5 one end, 6 pin
Connecting resistance R13 one end, 1,2,12 pin ground connection；The resistance R13 other ends are grounded；The capacitor C5 other ends are grounded.
Described follower circuit U1E, by TL064 operational amplifiers U1E, capacitor C17, C18 and resistance R36, R37 group
Into;TL064 operational amplifiers U1E 1 pin connecting resistance R37 and capacitor C18 one end, 2 pin connect the capacitor C18 other ends and electricity
R36 one end is hindered, 3 pin are connected to 8 pin of TL064 operational amplifiers U1C in dynamic ruling circuit；Resistance R36, R37 other end and electricity
Container C17 one end connects and connected with 8 pin of resistance R12, TL064 operational amplifier U1C in SG3525 chip periphery circuits；
The capacitor C17 other ends are grounded.
Described overvoltage crowbar U2E, by TL064 operational amplifiers U2E, diode Dn+2, capacitor C19, C20,
C21, resistance R37~R41 and variable resistor VR3 compositions；TL064 operational amplifiers U2E 5 pin connecting resistance R41, R39, R40 and
Capacitor C19 one end, 6 pin meet capacitor C21 and resistance R38 one end, and 7 pin connect capacitor C20 one end, the resistance R41 other ends
With diode Dn+2 positive pole；The capacitor C20 other ends are grounded, another termination variable resistor VR3 of resistance R38 3 pin；Can power transformation
Resistance VR3 1 pin meets power supply VSS, 2 pin connecting resistance R37 one end；Resistance R37 and capacitor the C21 other end connect and are grounded；Electricity
Hinder the resistance R21 other ends in R39 another termination B amplifying circuits U2D；Diode Dn+2 negative pole connects SG3525 chip peripheries
The SG3525RWM chips U2 of circuit 9 pin.
Described LC resonance circuits, by high-voltage DC power supply E, capacitor C22~C27, inductance L1~L6 and switch K groups
Into；Resistance R42, inductance L1~L6, switch K and resistance R43, parallel connection have been sequentially connected in series between high-voltage DC power supply E both positive and negative polarity
Capacitor C22~C27.
The beneficial effects of the invention are as follows：The pain that the invention solves operation to oncotherapy, chemicotherapy is brought to patient,
The side effects such as scar, inflammation are not resulted in over the course for the treatment of, at utmost reduce the injury to normal cell.
Brief description of the drawings
Below in conjunction with accompanying drawing, illustrated with embodiment.
Fig. 1 is the system block diagram of tumour nanosecond pulse electro-therapeutic apparatus；
Fig. 2 is Fig. 1 mesohigh DC power supply circuit electrical schematic diagrams；
Fig. 3 is A amplifying circuit U1D, B amplifying circuits U2D, voltage PID regulator circuit U 1B, electric current PID conciliations in Fig. 2
Circuit U 1A, automatic ruling circuit U 1C, SG3525 chip periphery circuit and SIM32F103 single-chip microcomputers electrical schematic diagram；
Fig. 4 is the electrical schematic diagram of the overvoltage of control follower U1E set-points circuit and protection circuit U2E in Fig. 2；
Fig. 5 is LC resonance circuit network impulse stroke line power principle figures in Fig. 1.
In figure：1- high voltage direct current source circuits；1-1-A amplifying circuits U1D；1-2- voltages PID regulation circuit Us 1B;1-3-
Automatic ruling circuit U 1C；1-4-SG3525 chip periphery circuits；1-5- electric currents PID regulation circuit Us 1A；1-6-B amplifying circuits
U2D；1-7- follower circuits U1E；1-8- overvoltage crowbars U2E；2-LC resonance circuits;3- gas spark switch；4- is loaded；
5- current transformers；6-SIM32F103 single-chip microcomputers；U1A, U1B, U1C, U1D, U3D, U1E, U2E-TL064 operational amplifier；
AC22OV- AC powers；DI-KBU8104 rectifier bridges；T1, T2- transformer；Q1~Q4- insulating gate type field effect tubes, A, B- are born
Feedback；K- is switched；D1~Dn+2 diodes；TVS- transient state killer tubes；TH- primary coils；T1-2~T1-5- secondary coils；
VR1, VR2, VR3- variable resistor；R1~R41- resistance；C1~C21- capacitors；L1~L6- inductance；D1~Dn, Dn+1, Dn+
2- diodes；U2-SG3525PWM chips.
Embodiment
Embodiment, referring to the drawings, a kind of tumour nanosecond pulse electro-therapeutic apparatus, including current transformer 5, single-chip microcomputer 6 and gas
Spark switch 3. is characterized in that single-chip microcomputer 6 and the UNICOM of high voltage direct current source circuit 1, high voltage direct current source circuit 1 and LC resonance
The UNICOM of circuit 2, LC resonance circuits 2 and the UNICOM of gas spark switch 3；High voltage direct current source circuit 1 include NC22OV power supplys with
1, the 2 pin connection of KBU8104 rectifier bridges, 3 pin of KBU8104 rectifier bridges connect capacitor C6 one end and insulating gate type field effect tube
Q1, Q3 1 pin, 4 pin connect transformer T1 secondary T1-3, T1-5, resistance R25, R29, the 2 of insulating gate type field effect tube Q2, Q4
The other end and ground of pin and capacitor C6；The transformer T1 termination voltage-regulator diodes of primary coil T1-1 two TVS two ends and electricity
Container C17 one end；Transformer T1 secondary coils T1-4 two ends difference connecting resistance R26, R27 one end and transformer T2 2 pin,
Resistance R26, R27 another termination insulating gate type field effect tube Q3 3 pin；Another terminating resistors of transformer secondary coil T1-5
R28 one end, another termination insulating gate type field effect tube Q4 of resistance R28, R29 3 pin；Transformer T2 secondary coil T1-2 two ends
Difference connecting resistance R22, resistance R23 one end；Insulating gate type field effect tube Q2 1 pin connects insulating gate type field effect tube Q1 2 pin, become
Depressor T2 1 pin and the resistance R23 other end；Transformer T2 3 pin meet the another of the resistance R17 in A amplifying circuits U1D1-1
End, capacitor C11, C12, resistance R30 and diode D5 one end；Another terminating resistor R30 other ends of capacitor C11 and ground；Electricity
Container C12 another termination multiple diode D3, D4 ... Dn, Dn+1 one end；Transformer T2 4 pin connect capacitor C8 one end；
Capacitor C8 another terminating diode D5, D3 and capacitor C9 one end；The capacitor C9 multiple diode D4 of another termination,
The Dn other end and capacitor C10 one end；Capacitor C10 another terminating diode Dn+1, resistance R31 one end, resistance R31
Connect multiple resistance R32 ~ Rn；Resistance Rn another termination voltage takes Chinese catalpa resistance R33, capacitor C7 and B amplifying circuit U2D1-6
In resistance R21 one end；Voltage sampling resistor R33 and capacitor C7 other end ground connection；Negative-feedback B 2 pin connection voltage
PID regulator U1B1-2 7 pin, 3 pin connect variable resistor UR2 3 pin；Variable resistor UR2 1 pin connects+10V power supplys, and 2 pin connect
Ground；Transformer T1 terminating resistor R22 one end of secondary coil T1-2 mono-, another terminating resistor R23 one end；Insulated-gate type field effect
21 pin under pipe Q1 2 pin insulating gate type field effect tube Q2 1 pin and transformer；Insulating gate type field effect tube Q1 3 pin connect electricity
Hinder R22, R23 other end；Insulating gate type field effect tube Q2 3 pin connecting resistance K24, R25 other end；Insulated-gate type field effect
Pipe Q3 3 pin connecting resistance R26, R27 one end；The two of resistance R26, R27 another termination transformer T1 secondary line level circle T1-4
End；Insulating gate type field effect tube Q4 3 pin connecting resistance R28, R29 one end；Resistance R28, R29 other end connect transformer respectively
T1 secondary coil T1-5 two ends；Negative-feedback A 1 pin connects resistance R17 one end in A amplifying circuits U1D1-1；2 pin connect electric current
PID regulation circuit Us 1A1-5 1 pin, 3 pin connect variable resistor VR1 3 pin；Variable resistor VR1 1 pin connects+10V power supplys, and 2 pin connect
Ground；Transient state killer tube TVS one end is connected with SG3525 chip periphery circuits 1-4；SG3525 chip periphery circuit 1-4 and overvoltage
Protection circuit U2E1-8 connections；Electric current P1D regulations circuit U 1A1-5 is connected with automatic ruling circuit U 1C1-3；Automatic ruling circuit
U1C1-3 is connected with voltage P1D regulations circuit U 1B1-2 and follower circuit U1E1-7.
Described A amplifying circuit U1D1-1, are made up of TL064 operational amplifiers U1D and resistance R14, R16, R17, R18；
Operational amplifier U1D 12 pin connecting resistance R17 one end, 13 pin connecting resistance R18 and R16 one end, 14 pin connecting resistance R14 one end
With the R16 other end；Resistance R18 other end ground connection.
Described B amplifying circuit U2D1-6, are made up of TL064 operational amplifiers U2D and resistance R15, R19, R20；TL064
The operational amplifier U3D 12 pin connecting resistance R21 other end, 13 pin connecting resistance R19, R20 one end, 4 pin meet power supply+VCC, 11
Pin connects power supply-VCC, 14 pin connecting resistance R15 one end and the resistance R20 other ends；The resistance R19 other ends are grounded.
Described voltage PID regulation circuit U 1B1-2, by TL064 operational amplifiers U1B, capacitor C3, C4 and resistance R5
~R8 is constituted；TL064 operational amplifiers U1B 7 pin connect capacitor C4 one end and the diode D2's in automatic ruling circuit 1-3
Negative pole, 6 pin connecting resistance R5, R7 and capacitor C3 one end, 5 pin connecting resistance R8 one end；Resistance R8 another termination
The interface of SIM32F103 single-chip microcomputers 6；The capacitor C3 another terminating resistor R6 other end；The resistance R5 other ends and capacitor
The C4 other ends are connected.
Described electric current PID regulator circuit U 1A1-5, by TL064 operational amplifiers U1A, capacitor C1, C2 and resistance
R1~R4 is constituted, and TL064 operational amplifiers U1A 1 pin meets the diode D1 in capacitor C1 one end and automatic ruling circuit 1-3
Negative pole, 11 pin meet power supply+VCC, and 4 pin connect power supply-UCC, 3 pin connecting resistance R1, R4 and capacitor C2 one end, 2 pin connecting resistances
R2 one end；The interface of resistance R2 another termination SIM32F103 single-chip microcomputers；The capacitor C2 other end connects with the resistance R3 other ends
Connect.
Described automatic ruling circuit U 1C1-3, by TL064 operational amplifiers U1C, diode D1, D2 and resistance R9,
R10, R11 are constituted；Electricity in TL064 operational amplifiers U1C 8 pin connecting resistance R10 one end and SG3525 chip periphery circuits 1-4
Hinder R12 one end, the positive pole of the 9 pin connecting resistance R10 other ends, resistance R11 one end and two pole D1, D2,10 pin connecting resistance R9 one end；
The resistance R9 other ends are grounded；Another termination power-VCC of resistance R11.
Described SG3525 chip periphery circuit 1-4, are made up of SG3525 chips U2 and resistance R12, R13；SG3525 cores
Piece U2 13,15 pin meet power supply+VCC, and the 9 pin connecting resistance R12 other ends, 5,7 pin connect capacitor C5 one end, 6 pin connecting resistance R13
One end, 1,2,12 pin ground connection；The resistance R13 other ends are grounded；The capacitor C5 other ends are grounded.
Described follower circuit U1E1-7, by TL064 operational amplifiers U1E, capacitor C17, C18 and resistance R36,
R37 is constituted;TL064 operational amplifiers U1E 1 pin connecting resistance R37 and capacitor C18 one end, it is another that 2 pin meet capacitor C18
End and resistance R36 one end, 3 pin are connected to 8 pin of TL064 operational amplifiers U1C in dynamic ruling circuit 1-3；Resistance R36, R37's is another
One end connect with capacitor C17 one end and with resistance R12, TL064 operational amplifier in SG3525 chip periphery circuits 1-4
U1C 8 pin connect；The capacitor C17 other ends are grounded.
Described overvoltage crowbar U2E1-8, by TL064 operational amplifiers U2E, diode Dn+2, capacitor C19,
C20, C21, resistance R37~R41 and variable resistor VR3 compositions；TL064 operational amplifiers U2E 5 pin connecting resistance R41, R39,
R40 and capacitor C19 one end, 6 pin meet capacitor C21 and resistance R38 one end, and it is another that 7 pin meet capacitor C20 one end, resistance R41
One end and diode Dn+2 positive pole；The capacitor C20 other ends are grounded, another termination variable resistor VR3 of resistance R38 3 pin；Can
1 pin for becoming resistance VR3 meets power supply VSS, 2 pin connecting resistance R37 one end；Resistance R37 and capacitor the C21 other end connect and connect
Ground；The resistance R21 other ends in resistance R39 another termination B amplifying circuits U2D1-6；Diode Dn+2 negative pole meets SG3525
Chip periphery circuit 1-4 SG3525PWM chips U2 9 pin.
Described LC resonance circuits 2, by high-voltage DC power supply E, capacitor C22~C27, inductance L1~L6 and switch K groups
Into；Resistance R42, power supply L1~L6, switch K and resistance R43, parallel connection have been sequentially connected in series between high-voltage DC power supply E both positive and negative polarity
Capacitor C22~C27.
LS resonance circuits 2 constitute a network LC1 by inductance L1, L2, L3 and capacitor C22, C23, C23, have inductance L4,
L5, L6 and capacitor C25, C26, C27 constitute a network LC2.
Gas spark switch 3 has been selected in systems, and this switch scope is wide, conduction electric current is big, flexible structure, system
Make simple, it, which has, bears high pressure resistant, service life length, inductance and the low characteristic of shake, in pulse power power device
To extensive use.
Primary current transformer 5 is 1 circle, and secondary is 100 circles, and the Ω resistance of secondary parallel 500 obtains signal and is sent to
The counter of MM74C93 in SIM32F103 single-chip microcomputers realizes pulse number technical functionality, and number is reached into predetermined value passes through
SIM32F103 single-chip microcomputers 6 are communicated, and transmission high level gives high voltage control signal plate, produces the shut-off that signal can be made to do high voltage power supply
Processing.The counting output function of high-voltage pulse is completed with this, to reconcile the tune of tumour cell electric-field intensity, radiated time and its amount
It is whole, reach the therapeutic effect of anticipation.More than various functions by SIM32F103 single-chip microcomputers 6 and the control program worked out from
It is dynamic to complete.
The operation principle of the invention is：High-voltage DC power supply 1 be used for give LC resonance circuits 2 provide high direct voltage, to LC1,
LC2 networks charge, when reaching the value that gas spark switch 3 is turned on, in load 4（Give the tumour for the treatment of）End produces high-voltage pulse
Waveform, fetches pulse signal by loading 4 current detectings and enters rectification and do signal transacting, obtain a low pressure high level signal to
MM74C93 calculators in SIM32F103 single-chip microcomputers 6, for the technological accumulation of pulse signal, when reaching count accumulation,
Start high pressure shut-off control signal, determine the control end of high-voltage direct current 1, so that producing for high-voltage direct current 1 is turned off,
So that the impulse waveform at the end of switching off load 4.
The slim contained high fdrequency component of high-voltage pulse will be helpful to electric treatment effect in tumour cell, further improve tumour
Apoptosis rate, and effectively induction suppression tumour cell cycle changes, and reaches the purpose for suppressing tumor tissue growth.Simultaneously
The pulse amplitude of high voltage power supply is adjustable, and mean power is adjustable, and high-voltage pulse number is adjustable, and treatment time is adjustable, to adapt to difference
The treatment of property tumour.
The invention succeed in developing by for the mankind malignant tumour is controlled pain started a new approach, be that medical science is made
Tremendous contribution.
Claims (8)
1. a kind of tumour nanosecond pulse electro-therapeutic apparatus, including current transformer（5）, single-chip microcomputer（6）And gas spark switch（3）, its
It is characterised by single-chip microcomputer（6）With high voltage direct current source circuit（1）UNICOM, high voltage direct current source circuit（1）With LC resonance circuits（2）
UNICOM, LC resonance circuits（2）With gas spark switch（3）UNICOM；High voltage direct current source circuit（1）Including AC220V power supplys with
1, the 2 pin connection of KBU8104 rectifier bridges, 3 pin of KBU8104 rectifier bridges connect capacitor C6 one end and insulating gate type field effect tube
Q1, Q3 1 pin, 4 pin meet transformer T1 secondary coil T1-3, T1-5, resistance R25, R29, insulating gate type field effect tube Q2, Q4
2 pin and capacitor C6 the other end, the capacitor C6 other ends ground connection；The transformer T1 termination voltage stabilizings two of primary coil T1-1 two
Pole pipe TVS two ends and capacitor C17 one end；Transformer T1 secondary coils T1-4 two ends difference connecting resistance R26, R27 mono-
End and transformer T2 2 pin, resistance R26, R27 another termination insulating gate type field effect tube Q3 3 pin；Transformer T1 secondary wires
Circle T1-5 mono- terminating resistor R29 one end, another terminating resistor R28 one end of transformer T1 secondary coils T1-5, resistance R28, R29 are another
One termination insulating gate type field effect tube Q4 3 pin；Transformer T1 secondary coil T1-2 two ends difference connecting resistance R22, resistance R23
One end；Insulating gate type field effect tube Q2 1 pin connects insulating gate type field effect tube Q1 2 pin, transformer T2 1 pin and resistance R23
The other end；Transformer T2 3 pin meet A amplifying circuits U1D（1-1）In resistance R17 the other end, capacitor C11, C12, electricity
Hinder R30 and diode D5 one end；The capacitor C11 other ends connect and are grounded with the resistance R30 other ends；Capacitor C12 is another
Terminate multiple diode D3, D4 ... Dn, Dn+1 one end；Transformer T2 4 pin connect capacitor C8 one end；Capacitor C8's is another
One terminating diode D5, D3 and capacitor C9 one end；The capacitor C9 multiple diode D4 ... Dn of another termination other end
With capacitor C10 one end；Capacitor C10 another terminating diode Dn+1, resistance R31 one end, the series connection of the resistance R31 other ends
Multiple resistance R32 ~ Rn；Resistance Rn another terminating resistor R33, capacitor C7 and B amplifying circuit U2D（1-6）In resistance R21
One end；Resistance R33 and capacitor the C7 other end connect and are grounded；Negative-feedback B 1 pin meets B amplifying circuits U2D（1-6）One
End, 2 pin connection voltage PID regulator U1B（1-2）7 pin, 3 pin connect variable resistor VR2 3 pin；Variable resistor VR2 1 pin connects
+ 10V power supplys, 2 pin ground connection；Transformer T1 terminating resistor R22 one end of secondary coil T1-2 mono-, another terminating resistor R23 one end；
Insulating gate type field effect tube Q1 2 pin connect insulating gate type field effect tube Q2 1 pin and transformer T2 1 pin；Insulated-gate type effect
Should pipe Q1 3 pin connecting resistance R22, R23 the other end；Insulating gate type field effect tube Q2 3 pin connecting resistance R24, R25's is another
End；Insulating gate type field effect tube Q3 3 pin connecting resistance R26, R27 one end；Resistance R26, R27 another termination transformer T1's
Secondary line level circle T1-4 two ends；Insulating gate type field effect tube Q4 3 pin connecting resistance R28, R29 one end；Resistance R28, R29's is another
One end connects transformer T1 secondary coil T1-5 two ends respectively；Negative-feedback A 1 pin meets A amplifying circuits U1D（1-1）In electricity
R17 one end is hindered, 2 pin meet electric current PID regulation circuit Us 1A（1-5）1 pin, 3 pin connect variable resistor VR1 3 pin；Variable resistor VR1
1 pin connect+10V power supplys, 2 pin ground connection；Outside the capacitor C17 other end and transient state killer tube TVS one end and SG3525 chips
Enclose circuit（1-4）Connection；SG3525 chip periphery circuits（1-4）With overvoltage crowbar U2E（1-8）Connection；Electric current P1D is adjusted
Circuit U 1A（1-5）With automatic ruling circuit U 1C（1-3）Connection；Automatic ruling circuit U 1C (1-3) and voltage P1D adjusts circuit
U1B（1-2）With follower circuit U1E（1-7）Connection；Voltage PID regulation circuit Us 1B（1-2）, by TL064 operational amplifiers
U1B, capacitor C3, C4 and resistance R5~R8 compositions；Automatic ruling circuit U 1C（1-3）, by TL064 operational amplifiers U1C, two
Pole pipe D1, D2 and resistance R9, R10, R11 composition；A amplifying circuits U1D（1-1）, by TL064 operational amplifiers U1D and resistance
R14, R16, R17, R18 are constituted；Operational amplifier U1D 12 pin connecting resistance R17 one end, the one of 13 pin connecting resistance R18 and R16
End, 14 pin connecting resistance R14 one end and the R16 other end；Resistance R18 other end ground connection；B amplifying circuits U2D（1-6）, by
TL064 operational amplifiers U2D and resistance R15, R19, R20 composition；TL064 operational amplifiers U2D 12 pin connecting resistance R21's is another
One end, 13 pin connecting resistance R19, R20 one end, 4 pin meet power supply+VCC, and 11 pin meet power supply-VCC, 14 pin connecting resistance R15 one end and
The resistance R20 other ends；The resistance R19 other ends are grounded.
2. tumour nanosecond pulse electro-therapeutic apparatus according to claim 1, it is characterised in that described voltage PID regulation circuits
U1B（1-2）, it is made up of TL064 operational amplifiers U1B, capacitor C3, C4 and resistance R5~R8；TL064 operational amplifiers U1B
7 pin connect capacitor C4 one end and automatic ruling circuit（1-3）In diode D2 negative pole, 6 pin connecting resistance R5, R7 and electric capacity
Device C3 one end, 5 pin connecting resistance R8 one end；Resistance R8 another termination SIM32F103 single-chip microcomputers（6）Interface；Capacitor
The C3 another terminating resistor R6 other end；The resistance R5 other ends are connected with the capacitor C4 other ends.
3. tumour nanosecond pulse electro-therapeutic apparatus according to claim 1, it is characterised in that described electric current PID regulator circuit
U1A（1-5）, it is made up of TL064 operational amplifiers U1A, capacitor C1, C2 and resistance R1~R4, TL064 operational amplifiers U1A
1 pin connect capacitor C1 one end and automatic ruling circuit（1-3）In diode D1 negative pole, 11 pin meet power supply+VCC, and 4 pin connect
Power supply-VCC, 3 pin connecting resistance R1, R4 and capacitor C2 one end, 2 pin connecting resistance R2 one end；Resistance R2 another termination
The interface of SIM32F103 single-chip microcomputers；The capacitor C2 other end is connected with the resistance R3 other ends.
4. tumour nanosecond pulse electro-therapeutic apparatus according to claim 1, it is characterised in that described automatic ruling circuit U 1C
（1-3）, it is made up of TL064 operational amplifiers U1C, diode D1, D2 and resistance R9, R10, R11；TL064 operational amplifiers U1C
8 pin connecting resistance R10 one end and SG3525 chip periphery circuits（1-4）In resistance R12 one end, 9 pin connecting resistance R10 are another
The positive pole at end, resistance R11 one end and two pole D1, D2,10 pin connecting resistance R9 one end；The resistance R9 other ends are grounded；Resistance R11 is another
Termination power-VCC.
5. tumour nanosecond pulse electro-therapeutic apparatus according to claim 1, it is characterised in that described SG3525 chip peripheries electricity
Road（1-4）, it is made up of SG3525 chips U2, resistance R12, R13 and capacitor C5；SG3525 chips U2 13,15 pin connect power supply+
VCC, the 9 pin connecting resistance R12 other ends, 5,7 pin connect capacitor C5 one end, 6 pin connecting resistance R13 one end, 1,2,12 pin ground connection；Electricity
Hinder R13 other ends ground connection；The capacitor C5 other ends are grounded.
6. tumour nanosecond pulse electro-therapeutic apparatus according to claim 1, it is characterised in that described follower circuit U1E（1-
7）, it is made up of TL064 operational amplifiers U1E, capacitor C17, C18 and resistance R36, R37；The 1 of TL064 operational amplifiers U1E
Pin connecting resistance R37 and capacitor C18 one end, 2 pin connect the capacitor C18 other ends and resistance R36 one end, and 3 pin are connected to dynamic ruling
Circuit（1-3）Middle TL064 operational amplifiers U1C 8 pin；Resistance R36, R37 other end connect with capacitor C17 one end and with
SG3525 chip periphery circuits（1-4）In resistance R12, TL064 operational amplifier U1C 8 pin connect；Capacitor C17 is another
End ground connection.
7. tumour nanosecond pulse electro-therapeutic apparatus according to claim 1, it is characterised in that described overvoltage crowbar U2E
（1-8）, by TL064 operational amplifiers U2E, diode Dn+2, capacitor C19, C20, C21, resistance R37~R41 and can power transformation
Hinder VR3 compositions；TL064 operational amplifiers U2E 5 pin connecting resistance R41, R39, R40 and capacitor C19 one end, 6 pin connect electric capacity
Device C21 and resistance R38 one end, 7 pin connect capacitor C20 one end, the resistance R41 other ends and diode Dn+2 positive pole；Capacitor
The C20 other ends are grounded, another termination variable resistor VR3 of resistance R38 3 pin；Variable resistor VR3 1 pin meets power supply VSS, and 2 pin connect
Resistance R37 one end；Resistance R37 and capacitor the C21 other end connect and are grounded；Resistance R39 another termination B amplifying circuits
U2D（1-6）In the resistance R21 other ends；Diode Dn+2 negative pole connects SG3525 chip periphery circuits（1-4）SG3525 cores
Piece U2 9 pin.
8. tumour nanosecond pulse electro-therapeutic apparatus according to claim 1, it is characterised in that described LC resonance circuits（2）, by
High-voltage DC power supply E, capacitor C22~C27, inductance L1~L6 and switch K compositions；Between high-voltage DC power supply E both positive and negative polarity
It has been sequentially connected in series resistance R42, inductance L1~L6, switch K and resistance R43, shunt capacitor C22~C27.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510217295.2A CN104784814B (en) | 2015-05-04 | 2015-05-04 | Tumour nanosecond pulse electro-therapeutic apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510217295.2A CN104784814B (en) | 2015-05-04 | 2015-05-04 | Tumour nanosecond pulse electro-therapeutic apparatus |
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| Publication Number | Publication Date |
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| CN104784814A CN104784814A (en) | 2015-07-22 |
| CN104784814B true CN104784814B (en) | 2017-09-05 |
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| Application Number | Title | Priority Date | Filing Date |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1089172A (en) * | 1993-01-09 | 1994-07-13 | 张进锁 | Touching-type instrument for invigorating channels and collaterals |
| US8688240B1 (en) * | 2012-10-30 | 2014-04-01 | Mitosis Inc. | Device for neuro-physiologic stimulation |
| CN103977500A (en) * | 2014-05-25 | 2014-08-13 | 重庆新大地电子有限公司 | Low-voltage negative-potential physiotherapy electrode device |
| CN204734856U (en) * | 2015-05-04 | 2015-11-04 | 大连捷众科技有限公司 | Tumour nanosecond pulse electro -therapeutic apparatus |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20090098541A (en) * | 2008-03-14 | 2009-09-17 | (주)메디즌 | Electrical treatment equipment with glove type electrode |
-
2015
- 2015-05-04 CN CN201510217295.2A patent/CN104784814B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1089172A (en) * | 1993-01-09 | 1994-07-13 | 张进锁 | Touching-type instrument for invigorating channels and collaterals |
| US8688240B1 (en) * | 2012-10-30 | 2014-04-01 | Mitosis Inc. | Device for neuro-physiologic stimulation |
| CN103977500A (en) * | 2014-05-25 | 2014-08-13 | 重庆新大地电子有限公司 | Low-voltage negative-potential physiotherapy electrode device |
| CN204734856U (en) * | 2015-05-04 | 2015-11-04 | 大连捷众科技有限公司 | Tumour nanosecond pulse electro -therapeutic apparatus |
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| Publication number | Publication date |
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| CN104784814A (en) | 2015-07-22 |
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Inventor after: Fan Yinhai Inventor after: Hu Dongjiang Inventor after: Wang Chao Inventor before: Geng Meiru |