CN104779678A - Power management circuit - Google Patents
Power management circuit Download PDFInfo
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- CN104779678A CN104779678A CN201510214635.6A CN201510214635A CN104779678A CN 104779678 A CN104779678 A CN 104779678A CN 201510214635 A CN201510214635 A CN 201510214635A CN 104779678 A CN104779678 A CN 104779678A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 abstract description 19
- 239000003990 capacitor Substances 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 5
- 230000003321 amplification Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/0063—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries with circuits adapted for supplying loads from the battery
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- H02J2007/0067—
Abstract
The embodiment of the invention discloses a power management circuit. The power management circuit solves the technical problem that at present, because a battery of equipment is mostly wasted in the idle or standby process, serious loss of the battery is caused. The power management circuit comprises a power input end Vin, a power output end Vout, a resistor R1, a resistor R2, a resistor R3, a capacitor C2 and an MCU control end. A semiconductor device comprises a first connecting end, a second connecting end and a third connecting end. The first connecting end is connected with the power input end Vin, the second connecting end is connected with the power output end Vout and one end of the resistor R2, the other end of the resistor R2 is connected with one end of the resistor R3, the first connecting end is further connected with one end of the resistor R1, the other end of the resistor R1 is connected between the resistor R2 and the resistor R3, the other end of the resistor R3 is connected with one end of the capacitor C2, and the other end of the capacitor C2 is connected with the MCU control end.
Description
Technical field
The present invention relates to electronic circuit technology field, particularly relate to a kind of electric power management circuit.
Background technology
Improving constantly of whole world energy saving requirement, the continuous progress of digital technology, the increase day by day of Split type electric source structure and electronic equipment must observe the requirement forcing efficiency specification, together with the motive power that the miniaturization of mancarried device, multi-functional development trend are power management techniques development, power management refers to the different assemblies how power supply effectively being distributed to system.Power management is most important for the mobile unit relying on battery supply.Energy consumption when leaving unused by reducing assembly, outstanding power-supply management system can by longer cell life twice or three times, and therefore electric power management circuit is one of the most direct simple way to manage.
Current normally sets about from electricity consumption end, use chip and the circuit of power saving more, thus reach prolongation battery durable ability, but aforesaid scheme of setting about from electricity consumption end cannot solve the battery loss of equipment when not using for a long time, comprise and use this process from producing to, simultaneously, standby in use procedure, or process etc. is deposited in the idleness of equipment, from current data statistics, the battery major part of equipment is loss in idle and standby, thus the loss problem that result in battery cannot solve.
Summary of the invention
Embodiments provide a kind of electric power management circuit, solve at present because the battery major part of equipment is loss in idle and standby, and the technical problem of the loss of the battery caused.
A kind of electric power management circuit that the embodiment of the present invention provides, comprising:
There is the semiconductor device of switching function, power input Vin, power output end Vout, 3 resistance R1, R2, R3, electric capacity C2 and MCU control end;
Described semiconductor device includes the first link, the second link and the 3rd link;
Described first link is connected with described power input Vin, described second link is connected with described power output end Vout, described second link is connected with one end of described resistance R2, the other end of described resistance R2 is connected with one end of described R3, described first link is also connected with one end of described resistance R1, the other end of described resistance R1 is connected between described resistance R2 and described resistance R3, the described resistance R3 other end is connected with one end of described electric capacity C2, and the described electric capacity C2 other end is connected with described MCU control end.
Preferably, described semiconductor device is triode or metal-oxide-semiconductor.
Preferably, when described semiconductor device is triode Q1, the collector electrode that described first link is the emitter of described triode Q1, the second link is described triode Q1 and the 3rd link are the base stage of described triode Q1.
Preferably, described electric power management circuit also comprises:
Switch G1, resistance R6 and electric capacity C1;
One end of described switch G1 is connected with the other end of resistance R1, and the other end of described switch G1 is connected with one end of described electric capacity C1, and the other end of described electric capacity C1 is connected with circuit reference ground;
Described electric capacity C1 and described resistance R6 is connected in parallel;
The other end of described resistance R1 and one end of resistance R3 are all connected with another semiconductor device.
Preferably, another semiconductor device described is triode or metal-oxide-semiconductor.
Preferably, when another semiconductor device described is triode Q2, first link of described triode Q2 is the emitter of described triode Q2, second link of described triode Q2 is the collector electrode of described triode Q2 and the 3rd link of described triode Q2 is the base stage of described triode Q2;
The emitter of described triode Q2 is connected with the other end of described resistance R1 and one end of described R3 simultaneously.
Preferably, the base stage of described triode Q2 is connected with one end of resistance R4 and one end of resistance R5, and the other end of described resistance R5 is connected with described MCU control end;
The collector electrode of described triode Q2 is connected with the other end of the other end of the other end of described resistance R4, described electric capacity C2, described resistance R6, the other end of described electric capacity C1 simultaneously.
Preferably, when described MCU control end does not have control signal, the base stage of described triode Q2 is moved to reference to ground by described resistance R4, the emitter of described triode Q2 and the collector electrode of described triode Q2 disconnect, electric current charges to described electric capacity C2 by described resistance R1, described resistance R3, makes described electric capacity R2 meet preset charging interval and preset charging voltage.
Preferably, the described preset charging interval is calculated by t=RC*Ln [(V1-V0)/(V1-Vt)];
Described preset charging voltage is calculated by Vt=" V0 "+(V1-V0) * [1-exp (-t/RC)];
Wherein, V0 is the initial voltage value of described electric capacity C2, and V1 is the magnitude of voltage that described electric capacity C2 finally can be charged to or be put into, and Vt is the magnitude of voltage on electric capacity C2 described in t, R is the internal resistance sum of described resistance R1, described resistance R3 and described electric capacity C2, and C is the capacitance of described electric capacity C2.
Preferably, described semiconductor device is metal-oxide-semiconductor Q3 and another semiconductor device described when being metal-oxide-semiconductor Q4, and described first link is source electrode or drain electrode, and described second link is source electrode or drain electrode, and described 3rd link is grid.
As can be seen from the above technical solutions, the embodiment of the present invention has the following advantages:
Embodiments provide a kind of electric power management circuit, comprising: the semiconductor device with switching function, power input Vin, power output end Vout, 3 resistance R1, R2, R3, electric capacity C2 and MCU control end; Semiconductor device includes the first link, the second link and the 3rd link; First link is connected with power input Vin, second link is connected with power output end Vout, second link is connected with one end of resistance R2, the other end of resistance R2 is connected with one end of R3, first link is also connected with one end of resistance R1, the other end of resistance R1 is connected between resistance R2 and resistance R3, and the resistance R3 other end is connected with one end of electric capacity C2, and the electric capacity C2 other end is connected with MCU control end.In the present embodiment, by using the semiconductor device with switching characteristic, and in conjunction with the charging/discharging function of electric capacity, just to achieve when equipment does not need work (as storage process, standby etc.), equipment oneself can close power down source, when equipment needs work, extraneous triggering work condition, the automatic power supply to the device of circuit, thus realize equipment electricity-saving function, improve the flying power of battery, solve at present because the battery major part of equipment is loss in idle and standby, and the technical problem of the loss of the battery caused.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
A kind of syndeton schematic diagram of electric power management circuit of Fig. 1 for providing in the embodiment of the present invention;
A kind of metal-oxide-semiconductor syndeton schematic diagram of electric power management circuit of Fig. 2 for providing in the embodiment of the present invention.
Embodiment
Embodiments provide a kind of electric power management circuit, solve at present because the battery major part of equipment is loss in idle and standby, and the technical problem of the loss of the battery caused.
For making goal of the invention of the present invention, feature, advantage can be more obvious and understandable, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, the embodiments described below are only the present invention's part embodiments, and the embodiment of not all.Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, belong to the scope of protection of the invention.
Refer to Fig. 1, an embodiment of a kind of electric power management circuit provided in the embodiment of the present invention comprises:
There is the semiconductor device of switching function, power input Vin, power output end Vout, 3 resistance R1, R2, R3, electric capacity C2 and MCU control end;
Semiconductor device includes the first link, the second link and the 3rd link;
First link is connected with power input Vin, second link is connected with power output end Vout, second link is connected with one end of resistance R2, the other end of resistance R2 is connected with one end of R3, first link is also connected with one end of resistance R1, the other end of resistance R1 is connected between resistance R2 and resistance R3, and the resistance R3 other end is connected with one end of electric capacity C2, and the electric capacity C2 other end is connected with MCU control end.
Preferably, semiconductor device is triode or metal-oxide-semiconductor.
Preferably, when semiconductor device is triode Q1, the collector electrode that the first link is the emitter of triode Q1, the second link is triode Q1 and the 3rd link are the base stage of triode Q1.
Preferably, electric power management circuit also comprises:
Switch G1, resistance R6 and electric capacity C1;
One end of switch G1 is connected with the other end of resistance R1, and the other end of switch G1 is connected with one end of electric capacity C1, and the other end of electric capacity C1 is connected with circuit reference ground;
Electric capacity C1 and resistance R6 is connected in parallel.
Preferably, the other end of resistance R1 and one end of R3 are all connected with another semiconductor device.
Preferably, another semiconductor device is triode or metal-oxide-semiconductor.
Preferably, when another semiconductor device is triode Q2, the collector electrode that first link of triode Q2 is the emitter of triode Q2, second link of triode Q2 is triode Q2 and the 3rd link of triode Q2 are the base stage of triode Q2;
The emitter of triode Q2 is connected with the other end of resistance R1 and one end of R3 simultaneously.
Preferably, the base stage of triode Q2 is connected with one end of resistance R4 and one end of resistance R5, and the other end of resistance R5 is connected with MCU control end;
The other end of the collector electrode of triode Q2 and the other end of resistance R4, electric capacity C2, the other end of resistance R6, the other end of electric capacity C1 are connected simultaneously.
Preferably, when MCU control end does not have control signal, the base stage of triode Q2 is moved to reference to ground by resistance R4, the emitter of triode Q2 and the collector electrode of triode Q2 disconnect, electric current is charged to electric capacity C2 by resistance R1, resistance R3, makes electric capacity R2 meet preset charging interval and preset charging voltage.
Preferably, the preset charging interval is calculated by t=RC*Ln [(V1-V0)/(V1-Vt)];
Preset charging voltage is calculated by Vt=V0+ (V1-V0) * [1-exp (-t/RC)];
Wherein, V0 is the initial voltage value of electric capacity C2, V1 is the magnitude of voltage that electric capacity C2 finally can be charged to or be put into, Vt is the magnitude of voltage on t electric capacity C2, R is the internal resistance sum of resistance R1, resistance R3 and electric capacity C2, and C is the capacitance of electric capacity C2, simultaneously, aforesaid R considers that resistance R1 is much larger than resistance R3 and electric capacity C2 internal resistance, so R directly can use the resistance of resistance R1 when calculating.
In the present embodiment, as shown in Figure 2, when using metal-oxide-semiconductor, it can be the drain D according to metal-oxide-semiconductor, grid G, source S pin position substitutes aforesaid first link, second link and the 3rd link, substitute first link of triode Q1 and/or triode Q2, second link and the 3rd link, i.e. emitter, collector electrode and base stage, therefore, semiconductor device is metal-oxide-semiconductor Q3 and another semiconductor device when being metal-oxide-semiconductor Q4, first link is source electrode or drain electrode, second link is source electrode or drain electrode, 3rd link is grid, be understandable that, semiconductor device is metal-oxide-semiconductor Q3 and another semiconductor device when being metal-oxide-semiconductor Q4, its operation principle is consistent with the working method of aforesaid triode Q1 and triode Q2, simultaneously, the switching characteristic of metal-oxide-semiconductor is technology well known to those skilled in the art, just be no longer described in detail herein.
For the ease of understand, below with an application examples to after work on power and cut off the electricity supply process, the down circuitry of the electric power management circuit shown in Fig. 1 again power supply process, the anti-exception procedure of circuit be described in detail, application examples comprises:
Work on power and cut off the electricity supply process:
First, according to triode ON characteristic, when emitter (E pole) voltage ratio base stage (B pole) voltage of triode exceeds triode ON voltage, triode ON, when electronic equipment powers on, battery is powered by Vin, controller (MCU) is not owing to having the too low cisco unity malfunction of electricity and voltage, Control_MCU control end (MCU control end) does not have control signal, the base stage (B pole) of triode Q2 is moved to reference to ground by resistance R4, triode Q2 emitter (E pole) and collector electrode (C pole) disconnect, electric current is by resistance R1, resistance R3 charges to electric capacity C2, in charging process, the computing formula of capacitor charging time and charging voltage is as follows:
V0 is the initial voltage value on electric capacity;
V1 is the magnitude of voltage that electric capacity finally can be charged to or be put into;
Vt is the magnitude of voltage on t electric capacity.
R is resistance R1, resistance R3 and electric capacity C2 internal resistance sum, but considers that resistance R1 is much larger than resistance R3 and electric capacity C2 internal resistance, so R directly can use the resistance of resistance R1 when calculating;
C is the capacitance of electric capacity C2;
Then, Vt=V0+ (V1-V0) * [1-exp (-t/RC)], and
t＝RC*Ln[(V1-V0)/(V1-Vt)]。
According to triode ON characteristic, when emitter (E pole) voltage ratio base stage (B pole) voltage of triode exceeds triode ON voltage, triode ON, when electric capacity C2 charges, when the voltage at electric capacity C2 two ends is less than (Vin-triode ON voltage), triode Q1 conducting, power supply is powered to controller (MCU) by triode Q1;
After controller (MCU) has electricity, controller (MCU) normally works, controller (MCU) sends a high level signal by Control_MCU control end, make triode Q2 emitter (E pole) and collector electrode (C pole) conducting, now, electric capacity C2 is discharged by resistance R3 and triode Q2, emitter (E pole) voltage ratio base stage (B pole) voltage of triode Q1 exceeds triode ON voltage, triode Q1 continues conducting, and power supply continues to power to controller (MCU) by triode Q1;
When controller (MCU) does not need work time, for example standby, controller (MCU) sends a low level signal or high resistant signal by Control_MCU control end, now the base stage (B pole) of triode Q2 is moved to reference to ground by the control signal of Control_MCU control end or resistance R4, triode Q2 emitter (E pole) and collector electrode (C pole) disconnect, electric current is again by resistance R1, resistance R3 charges to electric capacity C2, the voltage rise at electric capacity C2 two ends, when voltage when electric capacity C2 two ends is greater than (Vin-triode ON voltage), emitter (E pole) voltage and base stage (B pole) voltage of triode Q1 are less than triode ON voltage, triode Q1 turns to amplification region from saturation region, along with electric capacity C2 charges further, the voltage at electric capacity C2 two ends is higher, emitter (E pole) voltage and base stage (B pole) voltage of triode Q1 are less, thus triode Q1 emitter (E pole) and collector electrode (C pole) disconnect, (be called for short and cut off triode Q1), the power supply of triode Q1 cut-out and completing circuit cutting-off controlling device (MCU).
Power supply process again after down circuitry:
Circuit is cutting off in the process of powering to controller (MCU), and electric capacity C2 charges;
When the external world has any one to need the action of again powering, as mobile phone, PDA, camera, the button of the equipment such as remote controller, or the touch of toy, shake-up of security device (as Switch for door and window detects) switch etc., circuit can make this action the G1 switch of circuit, when there is no operational motion, switch G1 disconnects, once there be operational motion, switch G1 closes, electric capacity C2 is discharged by switch G1 and electric capacity C1, it should be noted that, in order to ensure that electric capacity C2 can fully discharge, the electric capacity C1 charging interval need be greater than discharge time of electric capacity C2, so the capacitance of electric capacity C1 can be electric capacity C2 capacitance 10 times and more than,
When electric capacity C2 discharges time, emitter (E pole) voltage and base stage (B pole) voltage difference of triode Q1 are increasing, and triode Q1, from cut-off state to magnifying state, finally arrives saturation condition, i.e. triode Q1 conducting, power supply is powered to controller (MCU) by triode Q1, after controller (MCU) normally works, controller (MCU) sends a high level signal by Control_MCU control end, make triode Q2 emitter (E pole) and collector electrode (C pole) conducting, now, electric capacity C2 is discharged by resistance R3 and triode Q2, emitter (E pole) voltage ratio base stage (B pole) voltage of triode Q1 exceeds triode ON voltage, triode Q1 continues conducting, power supply continues to power to controller (MCU) by triode Q1,
Because switch G1 may constant conduction, so electric capacity C1 is once cut off this circuit after being full of electricity, when preventing switch G1 constant conduction, (controller) MCU can not close triode Q1, can not cut off the electricity supply;
Resistance R6 is the discharge resistance of electric capacity C1, and electric capacity C1 again will charge when subsequent operation and must first its tele-release will be fallen after being full of electricity;
When controller (MCU) does not need work time, for example standby, controller (MCU) sends a low level signal or high resistant signal by Control_MCU control end, now the base stage (B pole) of triode Q2 is moved to reference to ground by the control signal of Control_MCU control end or resistance R4, triode Q2 emitter (E pole) and collector electrode (C pole) disconnect, if G1 switch has disconnected or electric capacity C1 charging complete, then switch G1 and this loop of electric capacity C1 cut off, electric current is again by resistance R1, resistance R3 charges to electric capacity C2, the voltage rise at electric capacity C2 two ends, when voltage when electric capacity C2 two ends is greater than (Vin-triode ON voltage), emitter (E pole) voltage and base stage (B pole) voltage of triode Q1 are less than triode ON voltage, triode Q1 turns to amplification region from saturation region, along with electric capacity C2 charges further, the voltage at electric capacity C2 two ends is higher, emitter (E pole) voltage and base stage (B pole) voltage of triode Q1 are less, thus triode Q1 emitter (E pole) and collector electrode (C pole) disconnect, (be called for short and cut off triode Q1), the power supply of triode Q1 cut-out and completing circuit cutting-off controlling device (MCU), if G1 switch is also in conducting and electric capacity C1 does not yet complete charging, then need to wait electric capacity C1 to complete the power supply of charging ability cutting-off controlling device (MCU),
The anti-exception procedure of circuit:
When controller (MCU) normally work, electric capacity C2 is in discharge condition or electricity discharges, because controller (MCU) is abnormal, lose the control signal to Control_MCU control end, electric capacity C2 changes into charging, and in electric capacity C2 charging process, triode Q1 continues conducting, not cutting-off controlling device (MCU) power supply, controller (MCU) can recover before triode Q1 cuts off the electricity supply.
If controller (MCU) there occurs expendable event, this circuit can make it recover by cutting-off controlling device (MCU) power supply.
Embodiments provide a kind of electric power management circuit, comprising: the semiconductor device with switching function, power input Vin, power output end Vout, 3 resistance R1, R2, R3, electric capacity C2 and MCU control end; Semiconductor device includes the first link, the second link and the 3rd link; First link is connected with power input Vin, second link is connected with power output end Vout, second link is connected with one end of resistance R2, the other end of resistance R2 is connected with one end of R3, first link is also connected with one end of resistance R1, the other end of resistance R1 is connected between resistance R2 and resistance R3, and the resistance R3 other end is connected with one end of electric capacity C2, and the electric capacity C2 other end is connected with MCU control end.In the present embodiment, by using the semiconductor device with switching characteristic, and in conjunction with the charging/discharging function of electric capacity, just to achieve when equipment does not need work (as storage process, standby etc.), equipment oneself can close power down source, when equipment needs work, extraneous triggering work condition, the automatic power supply to the device of circuit, thus realize equipment electricity-saving function, improve the flying power of battery, solve at present because the battery major part of equipment is loss in idle and standby, and the technical problem of the loss of the battery caused.
In the present embodiment, as shown in Figure 2, when using metal-oxide-semiconductor, it can be the drain D according to metal-oxide-semiconductor, grid G, source S pin position substitutes aforesaid first link, second link and the 3rd link, substitute first link of triode Q1 and/or triode Q2, second link and the 3rd link, i.e. emitter, collector electrode and base stage, therefore, semiconductor device is metal-oxide-semiconductor Q3 and another semiconductor device when being metal-oxide-semiconductor Q4, first link is source electrode or drain electrode, second link is source electrode or drain electrode, 3rd link is grid, be understandable that, semiconductor device is metal-oxide-semiconductor Q3 and another semiconductor device when being metal-oxide-semiconductor Q4, its operation principle is consistent with the working method of aforesaid triode Q1 and triode Q2, simultaneously, the switching characteristic of metal-oxide-semiconductor is technology well known to those skilled in the art, just be no longer described in detail herein.
Further, the embodiment of the present invention not only achieves circuit oneself can control power-off as required, reaches the object of power saving, meanwhile, is applicable to very much battery supply set and the energy-conservation circuit of needs; External trigger is powered, inner technical scheme of cutting off the electricity supply voluntarily, and circuit components is few, failure rate is low, and cost is very low, circuit is simple, and reliability is high, practicality is very strong, circuit is power saving very, extends battery durable ability, and this circuit uses can be widely, the consumer digital products such as toy, remote controller, mobile phone, PDA can also be the security devices such as switch gate, window detector, left front; And, people Lai Dengliang, the intelligent building products such as the LED turned off the light when you leave.
The above, above embodiment only in order to technical scheme of the present invention to be described, is not intended to limit; Although with reference to previous embodiment to invention has been detailed description, those of ordinary skill in the art is to be understood that: it still can be modified to the technical scheme described in foregoing embodiments, or carries out equivalent replacement to wherein portion of techniques feature; And these amendments or replacement, do not make the essence of appropriate technical solution depart from the spirit and scope of various embodiments of the present invention technical scheme.
Claims (10)
1. an electric power management circuit, is characterized in that, comprising:
There is the semiconductor device of switching function, power input Vin, power output end Vout, 3 resistance R1, R2, R3, electric capacity C2 and MCU control end;
Described semiconductor device includes the first link, the second link and the 3rd link;
Described first link is connected with described power input Vin, described second link is connected with described power output end Vout, described second link is connected with one end of described resistance R2, the other end of described resistance R2 is connected with one end of described R3, described first link is also connected with one end of described resistance R1, the other end of described resistance R1 is connected between described resistance R2 and described resistance R3, the described resistance R3 other end is connected with one end of described electric capacity C2, and the described electric capacity C2 other end is connected with described MCU control end.
2. electric power management circuit according to claim 1, is characterized in that, described semiconductor device is triode or metal-oxide-semiconductor.
3. electric power management circuit according to claim 2, it is characterized in that, when described semiconductor device is triode Q1, the collector electrode that described first link is the emitter of described triode Q1, the second link is described triode Q1 and the 3rd link are the base stage of described triode Q1.
4. electric power management circuit as claimed in any of claims 1 to 3, is characterized in that, described electric power management circuit also comprises:
Switch G1, resistance R6 and electric capacity C1;
One end of described switch G1 is connected with the other end of resistance R1, and the other end of described switch G1 is connected with one end of described electric capacity C1, and the other end of described electric capacity C1 is connected with circuit reference ground;
Described electric capacity C1 and described resistance R6 is connected in parallel;
The other end of described resistance R1 and one end of resistance R3 are all connected with another semiconductor device.
5. electric power management circuit according to claim 4, is characterized in that, another semiconductor device described is triode or metal-oxide-semiconductor.
6. electric power management circuit according to claim 5, it is characterized in that, when another semiconductor device described is triode Q2, first link of described triode Q2 is the emitter of described triode Q2, second link of described triode Q2 is the collector electrode of described triode Q2 and the 3rd link of described triode Q2 is the base stage of described triode Q2;
The emitter of described triode Q2 is connected with the other end of described resistance R1 and one end of described R3 simultaneously.
7. electric power management circuit according to claim 6, is characterized in that, the base stage of described triode Q2 is connected with one end of resistance R4 and one end of resistance R5, and the other end of described resistance R5 is connected with described MCU control end;
The collector electrode of described triode Q2 is connected with the other end of the other end of the other end of described resistance R4, described electric capacity C2, described resistance R6, the other end of described electric capacity C1 simultaneously.
8. electric power management circuit according to claim 7, it is characterized in that, when described MCU control end does not have control signal, the base stage of described triode Q2 is moved to reference to ground by described resistance R4, the emitter of described triode Q2 and the collector electrode of described triode Q2 disconnect, electric current charges to described electric capacity C2 by described resistance R1, described resistance R3, makes described electric capacity R2 meet preset charging interval and preset charging voltage.
9. electric power management circuit according to claim 8, is characterized in that, the described preset charging interval is calculated by t=RC*Ln [(V1-V0)/(V1-Vt)];
Described preset charging voltage is calculated by Vt=V0+ (V1-V0) * [1-exp (-t/RC)];
Wherein, V0 is the initial voltage value of described electric capacity C2, and V1 is the magnitude of voltage that described electric capacity C2 finally can be charged to or be put into, and Vt is the magnitude of voltage on electric capacity C2 described in t, R is the internal resistance sum of described resistance R1, described resistance R3 and described electric capacity C2, and C is the capacitance of described electric capacity C2.
10. electric power management circuit according to claim 5, it is characterized in that, described semiconductor device is metal-oxide-semiconductor Q3 and another semiconductor device described when being metal-oxide-semiconductor Q4, and described first link is source electrode or drain electrode, described second link is source electrode or drain electrode, and described 3rd link is grid.
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|---|---|---|---|---|
| CN102097928A (en) * | 2011-01-31 | 2011-06-15 | 西安民展微电子有限公司 | High voltage starting circuit applied to AC/DC converter |
| CN202712892U (en) * | 2012-06-20 | 2013-01-30 | 深圳桑达国际电子器件有限公司 | Battery management system and load detection circuit thereof |
| CN202798044U (en) * | 2012-07-19 | 2013-03-13 | 康佳集团股份有限公司 | Power control device |
| CN203193589U (en) * | 2013-04-27 | 2013-09-11 | 青岛海信宽带多媒体技术有限公司 | Power source control circuit and electronic product with slow-start control |
| CN204794136U (en) * | 2015-04-29 | 2015-11-18 | 从兴技术有限公司 | Power management circuit |
-
2015
- 2015-04-29 CN CN201510214635.6A patent/CN104779678B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102097928A (en) * | 2011-01-31 | 2011-06-15 | 西安民展微电子有限公司 | High voltage starting circuit applied to AC/DC converter |
| CN202712892U (en) * | 2012-06-20 | 2013-01-30 | 深圳桑达国际电子器件有限公司 | Battery management system and load detection circuit thereof |
| CN202798044U (en) * | 2012-07-19 | 2013-03-13 | 康佳集团股份有限公司 | Power control device |
| CN203193589U (en) * | 2013-04-27 | 2013-09-11 | 青岛海信宽带多媒体技术有限公司 | Power source control circuit and electronic product with slow-start control |
| CN204794136U (en) * | 2015-04-29 | 2015-11-18 | 从兴技术有限公司 | Power management circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104779678B (en) | 2018-01-30 |
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