CN104779332B - Light source and backlight module - Google Patents
Light source and backlight module Download PDFInfo
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- CN104779332B CN104779332B CN201510174668.2A CN201510174668A CN104779332B CN 104779332 B CN104779332 B CN 104779332B CN 201510174668 A CN201510174668 A CN 201510174668A CN 104779332 B CN104779332 B CN 104779332B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims description 19
- 230000005611 electricity Effects 0.000 claims description 10
- 230000011514 reflex Effects 0.000 description 5
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009738 saturating Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Planar Illumination Modules (AREA)
Abstract
The present invention provides a kind of light source and backlight module.Light source includes first electrode supporter,First transparency conducting layer,Second transparency conducting layer,First conductive-type semiconductor layer,Active layer,Second conductive-type semiconductor layer and second electrode,First electrode supporter loads the first polar voltages,And for supporting the first transparency conducting layer,Second transparency conducting layer,First conductive-type semiconductor layer,Active layer,Second conductive-type semiconductor layer and second electrode,First transparency conducting layer and the second transparency conducting layer are set in turn on the same surface of first electrode supporter,First conductive-type semiconductor layer,The conductive-type semiconductor layer of active layer second is set in turn in the middle part of the second transparency conducting layer,Second electrode is arranged at the middle part of the second conductive-type semiconductor layer,Second electrode loads the second polar voltages,The conductance of the first transparency conducting layer and the second transparency conducting layer is respectively the first electrical conductivity and the second electrical conductivity,First electrical conductivity is less than the second electrical conductivity.
Description
Technical field
The present invention relates to plane display field, more particularly to a kind of light source and backlight module.
Background technology
Used as a kind of conventional light source, it passes through compound half to light emitting diode (light emitting diode, LED)
The PN junction of conductor constitutes light source, it is possible to send the light of shades of colour.LED has service life more long, it is easy to manufacture small chi
Very little and light weight, with stronger light directionality, the advantages of shock resistance and good anti-seismic performance, thus has obtained widely applying.
In the prior art, the light source includes two electrodes, conductive layer and ray structure is set between two electrodes, between two electrodes
Electric current can not flow well into ray structure, so as to cause the luminous efficiency of LED not high.
The content of the invention
The present invention provides a kind of light source, and the light source includes first electrode supporter, the first transparency conducting layer, second transparent
Conductive layer, the first conductive-type semiconductor layer, active layer, the second conductive-type semiconductor layer and second electrode, the first electrode branch
Support body loads the first polar voltages, and for supporting first transparency conducting layer, second transparency conducting layer, described first
Conductive-type semiconductor layer, the active layer, second conductive-type semiconductor layer and the second electrode, described first transparent leads
Electric layer and second transparency conducting layer are set in turn on the same surface of the first electrode supporter, and described first is conductive
Second conductive-type semiconductor layer described in type semiconductor layer, the active layer is set in turn in second transparency conducting layer
Portion, the second electrode is arranged at the middle part of second conductive-type semiconductor layer, and the second electrode loads the second polarity electricity
The conductance of pressure, first transparency conducting layer and second transparency conducting layer is respectively the first electrical conductivity and the second conductance
Rate, first electrical conductivity is less than second electrical conductivity.
Wherein, first transparency conducting layer and the second transparency conducting layer length are identical, and cross-sectional area is identical, described
Resistivity of the resistivity of the first transparency conducting layer more than second transparency conducting layer.
Wherein, the material of first transparency conducting layer is identical with the material of second transparency conducting layer, and described first
The equivalent cross-sectional area of transparency conducting layer is identical with the equivalent cross-sectional area of second transparency conducting layer, and described first transparent
Length of the length of conductive layer more than second transparency conducting layer.
Wherein, first transparency conducting layer includes Part I and two Part II, and the Part I includes the
One sublist face, the second sublist face, the 3rd sublist face and the 4th sublist face, the first sublist face are relative with the second sublist face
Set, two Part II are respectively arranged at the middle part in the first sublist face and the middle part in the second sublist face, described the
, more than the cross-sectional area of the Part II, the 3rd sublist face is compared to the 4th sublist face for the cross-sectional area of a part
The neighbouring first electrode supporter is set, and the 4th sublist face is connected with first transparency conducting layer, and described second
Transparency conducting layer is arranged on the Part II.
Wherein, the light source also includes reflecting layer, and the reflecting layer is arranged on first transparency conducting layer with described the
Between one electrode support.
Wherein, the reflecting layer includes the first reflecting part and two the second reflecting parts, and first reflecting part is
Groove, the Part I for housing first transparency conducting layer, second reflecting part and the connection described first
The side wall of reflecting part, and be arranged between the Part II and the first electrode supporter.
Wherein, first transparency conducting layer includes Part I and two Part II, and the Part I includes the
One sublist face, the second sublist face, the 3rd sublist face and the 4th sublist face, the first sublist face are relative with the second sublist face
Set, two Part II are separately positioned on the first sublist face adjacent to the end of the first electrode supporter, and described
Part II adjacent to the surface of the first electrode supporter and the Part I adjacent to the first electrode supporter table
In the same plane, the cross-sectional area of the Part I is more than the rank street area of the Part II, the 3rd sublist in face
Face is set compared to the 4th sublist face adjacent to the first electrode supporter, and the 4th sublist face is transparent with described first
Conductive layer is connected, and second transparency conducting layer is arranged on the Part II.
Wherein, the light source also includes reflecting layer, and the reflecting layer is arranged at first transparency conducting layer with described the
Between one electrode support.
Wherein, first polar voltages are respectively positive voltage and negative voltage, Huo Zhesuo with second polar voltages
The first polar voltages are stated with second polar voltages respectively negative voltage and positive voltage.
Light source of the invention includes first electrode supporter, the first transparency conducting layer, the second transparency conducting layer, the first conduction
Type semiconductor layer, active layer, the second conductive layer semiconductor layer and second electrode, the first electrode supporter load the first polarity
Voltage, and for supporting first transparency conducting layer, the second transparency conducting layer, the first conductive-type semiconductor layer, active layer,
Two conductive layer semiconductor layers and second electrode.First conductive-type semiconductor layer, the active layer and second conductivity type
Semiconductor layer is set in turn in the middle part of second transparency conducting layer, and the second electrode is arranged at second conductivity type half
The middle part of conductor layer, the second electrode loads the second polar voltages, first transparency conducting layer and described second transparent leads
The conductance of electric layer is respectively the first electrical conductivity and the second electrical conductivity, and first electrical conductivity is less than second electrical conductivity.When
Between the first electrode supporter and the second electrode during on-load voltage, the first electrode supporter and described second electricity
The major part of the electric current of pole can be flowed into described by first conductive-type semiconductor layer, institute by second transparency conducting layer
The ray structure of active layer and second conductive-type semiconductor layer composition is stated, the luminous effect of the light source can be effectively improved
Rate.
Present invention also offers a kind of backlight module, the backlight module includes foregoing any one reality of each implementation method
Apply the light source described in mode.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
The structural representation of the light source that Fig. 1 is provided for a better embodiment of the invention.
The structural representation of the light source that Fig. 2 is provided for another better embodiment of the invention.
The structural representation of the light source that Fig. 3 is provided for another better embodiment of the invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Refer to Fig. 1, the structural representation of the light source that Fig. 1 is provided for a better embodiment of the invention.The light source 10
It is light emitting diode, the light source 10 includes first electrode supporter 110, the first transparency conducting layer 120, the second transparency conducting layer
130th, the first conductive-type semiconductor layer 140, active layer 150, the second conductive-type semiconductor layer 160 and second electrode 170.Described
One electrode support 110 loads the first polar voltages, and for supporting first transparency conducting layer 120, described second transparent
Conductive layer 130, first conductive-type semiconductor layer 140, the active layer 150, second conductive-type semiconductor layer 160 and
The second electrode 170.First transparency conducting layer 120 and second transparency conducting layer 130 are set in turn in described
On the same surface of one electrode support 110.First conductive-type semiconductor layer 140, the active layer 150, described second
Conductive-type semiconductor layer 160 and the second electrode 170 are cascadingly set on the middle part of second transparency conducting layer 130.
The second electrode 170 is arranged at the middle part of second conductive-type semiconductor layer 160, the loading of the second electrode 170 second
Polar voltages.The conductance of first transparency conducting layer 120 and second transparency conducting layer 130 is respectively the first conductance
And second conductance, first conductance is less than second conductance.
The material of first transparency conducting layer 120 can be but be not limited only to be indium tin oxide, indium-zinc oxide etc..
Preferably, the light source 10 also includes reflecting layer 180, and the reflecting layer 180 is arranged on first electrically conducting transparent
Between layer 120 and the first electrode supporter 110.The reflecting layer 180 is used to cause the first transparency conducting layer described in printing opacity
120 and the photon of second transparency conducting layer 130 reflex to first conductive-type semiconductor layer 140, the active layer 150
And second conductive-type semiconductor layer 160.
In the present embodiment, first polar voltages are respectively positive voltage and negative electricity with second polar voltages
Pressure.It is to be appreciated that in other embodiments, first polar voltages are respectively negative voltage with second polar voltages
And positive voltage.
In the present embodiment, the length phase of first transparency conducting layer 120 and second transparency conducting layer 130
Together, first transparency conducting layer 120 is identical with the cross-sectional area of second transparency conducting layer 130, and described first transparent leads
Resistivity of the resistivity of electric layer 120 more than second transparency conducting layer 130.Due to formula such as formula (1) institute of resistance
Show.
R=ρ L/S (1)
Wherein, R represents resistance, and the inverse of resistance is electrical conductivity, and ρ represents resistivity, and L represents the length of resistance, and S is represented
Cross-sectional area.From formula (1), resistance R is directly proportional to resistivity and length L, is inversely proportional with cross-sectional area S.
In the present embodiment, the length phase of first transparency conducting layer 120 and second transparency conducting layer 130
Together, first transparency conducting layer 120 is identical with the cross-sectional area of second transparency conducting layer 130, and described first transparent leads
The resistivity of electric layer 120 is more than the resistivity of second transparency conducting layer 130, therefore, according to formula (1), described first is saturating
Resistance of the resistance of bright conductive layer 120 more than second transparency conducting layer 130.Because electrical conductivity is the inverse of resistance, therefore,
Electrical conductivity of the electrical conductivity of first transparency conducting layer 120 less than second transparency conducting layer 130, i.e. first electricity
Conductance is less than second electrical conductivity.
Refer to Fig. 2, the structural representation of the light source that Fig. 2 is provided for another better embodiment of the invention.The light source
10 is light emitting diode, and the light source 10 includes first electrode supporter 110, the first transparency conducting layer 120, the second electrically conducting transparent
The 130, first conductive-type semiconductor layer 140 of layer, active layer 150, the second conductive-type semiconductor layer 160 and second electrode 170.It is described
First electrode supporter 110 loads the first polar voltages, and for supporting first transparency conducting layer 120, described second saturating
Bright conductive layer 130, first conductive-type semiconductor layer 140, the active layer 150, second conductive-type semiconductor layer 160
And the second electrode 170.First transparency conducting layer 120 and second transparency conducting layer 130 are set in turn in described
On the same surface of first electrode supporter 110.First conductive-type semiconductor layer 140, the active layer 150, described
Two conductive semiconductor layer 160 and the second electrode 170 are cascadingly set in second transparency conducting layer 130
Portion.The second electrode 170 is arranged at the middle part of second conductive-type semiconductor layer 160, the loading of the second electrode 170 the
Two polar voltages.It is conductive that the conductance of first transparency conducting layer 120 and second transparency conducting layer 130 is respectively first
Rate and the second conductance, first conductance are less than second conductance.
The material of first transparency conducting layer 120 can be but be not limited only to be indium tin oxide, indium-zinc oxide etc..
Preferably, the light source 10 also includes reflecting layer 180, and the reflecting layer 180 is arranged on first electrically conducting transparent
Between layer 120 and the first electrode supporter 110.The reflecting layer 180 be used for cause first transparency conducting layer 120 and
The light of second transparency conducting layer 130 reflexes to first conductive-type semiconductor layer 140, the active layer 150 and described
Second conductive-type semiconductor layer 160.
In the present embodiment, first polar voltages are respectively positive voltage and negative electricity with second polar voltages
Pressure.It is to be appreciated that in other embodiments, first polar voltages are respectively negative voltage with second polar voltages
And positive voltage.
In the present embodiment, the material of the material of first transparency conducting layer 120 and second transparency conducting layer 130
Material is identical, the equivalent cross section of the equivalent cross-sectional area of first transparency conducting layer 120 and second transparency conducting layer 130
Product it is identical, and first transparency conducting layer 120 length more than second transparency conducting layer 130 length.Due to electricity
Shown in the formula of resistance such as formula (1).
R=ρ L/S (1)
Wherein, R represents resistance, and the inverse of resistance is electrical conductivity, and ρ represents resistivity, and L represents the length of resistance, and S is represented
Cross-sectional area.From formula (1), resistance R is directly proportional to resistivity and length L, is inversely proportional with cross-sectional area S.
In the present embodiment, the material of the material of first transparency conducting layer 120 and second transparency conducting layer 130
Material is identical, i.e. the resistivity of first transparency conducting layer 120 is equal to the resistivity of second transparency conducting layer 130, described
The equivalent cross-sectional area of the first transparency conducting layer 120 is identical with the equivalent cross-sectional area of second transparency conducting layer 130, described
The length of the first transparency conducting layer 120 is more than the length of second transparency conducting layer 130, therefore, it is described according to formula (1)
Resistance of the resistance of the first transparency conducting layer 120 more than second transparency conducting layer 130.Due to electrical conductivity falling for resistance
Number, therefore, the electrical conductivity of the electrical conductivity less than second transparency conducting layer 130 of first transparency conducting layer 120, i.e. institute
The first electrical conductivity is stated less than second electrical conductivity.
In the present embodiment, first transparency conducting layer 120 includes Part I 121 and two Part II 122.
The Part I 121 includes the first sublist face 121a, the second sublist face 121b, the 3rd sublist face 121c and the 4th sublist face
121d.The first sublist face 121a is oppositely arranged with the second sublist face 121b, and two Part II 122 are respectively arranged at
The middle part of the first sublist face 121a and the middle part of the second sublist face 121b.The cross-sectional area of the Part I 121
More than the cross-sectional area of the Part II 122, the 3rd sublist face 121c is neighbouring compared to the 4th sublist face described
First electrode supporter 110 is set.The 4th sublist face 121d is connected with first transparency conducting layer 120, and described
Two transparency conducting layers 130 are arranged on the Part II 122.Due to the structure of first transparency conducting layer 120 so that institute
State the second transparency conducting layer 130 and be divided into two parts, two parts of second transparency conducting layer 130 are respectively arranged at described
On Part II 122.
The light source 10 also include reflecting layer 180, the reflecting layer 180 be arranged on first transparency conducting layer 120 with
Between the first electrode supporter 110.The reflecting layer 180 is used to cause first transparency conducting layer 120 and described the
The light of two transparency conducting layers 130 reflexes to first conductive-type semiconductor layer 140, the active layer 150 and described second leads
Electric type semiconductor layer 160.The reflecting layer 180 includes the first reflecting part 181 and two the second reflecting parts 182, described the
One reflecting part 181 is groove, the Part I 121 for housing first transparency conducting layer 120, and described second is anti-
Penetrate part 182 and connect the side wall of first reflecting part 181, and be arranged on the Part II 122 with described first
Between support body 110.
Also referring to Fig. 3, the structural representation of the light source that Fig. 3 is provided for another better embodiment of the invention.It is described
Light source 10 is light emitting diode, and the light source 10 includes that first electrode supporter 110, the first transparency conducting layer 120, second are transparent
Conductive layer 130, the first conductive-type semiconductor layer 140, active layer 150, the second conductive-type semiconductor layer 160 and second electrode 170.
The first electrode supporter 110 loads the first polar voltages, and for supporting first transparency conducting layer 120, described the
Two transparency conducting layers 130, first conductive-type semiconductor layer 140, the active layer 150, second conductive-type semiconductor
Layer 160 and the second electrode 170.First transparency conducting layer 120 and second transparency conducting layer 130 are set in turn in
On the same surface of the first electrode supporter 110.First conductive-type semiconductor layer 140, the active layer 150, institute
State the second conductive-type semiconductor layer 160 and the second electrode 170 is cascadingly set on second transparency conducting layer 130
Middle part.The second electrode 170 is arranged at the middle part of second conductive-type semiconductor layer 160, and the second electrode 170 is loaded
Second polar voltages.The conductance of first transparency conducting layer 120 and second transparency conducting layer 130 is respectively first and leads
Electric rate and the second conductance, first conductance are less than second conductance.
The material of first transparency conducting layer 120 can be but be not limited only to be indium tin oxide, indium-zinc oxide etc..
Preferably, the light source 10 also includes reflecting layer 180, and the reflecting layer 180 is arranged on first electrically conducting transparent
Between layer 120 and the first electrode supporter 110.The reflecting layer 180 be used for cause first transparency conducting layer 120 and
The light of second transparency conducting layer 130 reflexes to first conductive-type semiconductor layer 140, the active layer 150 and described
Second conductive-type semiconductor layer 160.
In the present embodiment, first polar voltages are respectively positive voltage and negative electricity with second polar voltages
Pressure.It is to be appreciated that in other embodiments, first polar voltages are respectively negative voltage with second polar voltages
And positive voltage.
In the present embodiment, the material of the material of first transparency conducting layer 120 and second transparency conducting layer 130
Material is identical, the equivalent cross section of the equivalent cross-sectional area of first transparency conducting layer 120 and second transparency conducting layer 130
Product it is identical, and first transparency conducting layer 120 length more than second transparency conducting layer 130 length.Due to electricity
Shown in the formula of resistance such as formula (1).
R=ρ L/S (1)
Wherein, R represents resistance, and the inverse of resistance is electrical conductivity, and ρ represents resistivity, and L represents the length of resistance, and S is represented
Cross-sectional area.From formula (1), resistance R is directly proportional to resistivity and length L, is inversely proportional with cross-sectional area S.
In the present embodiment, the material of the material of first transparency conducting layer 120 and second transparency conducting layer 130
Material is identical, i.e. the resistivity of first transparency conducting layer 120 is equal to the resistivity of second transparency conducting layer 130, described
The equivalent cross-sectional area of the first transparency conducting layer 120 is identical with the equivalent cross-sectional area of second transparency conducting layer 130, described
The length of the first transparency conducting layer 120 is more than the length of second transparency conducting layer 130, therefore, it is described according to formula (1)
Resistance of the resistance of the first transparency conducting layer 120 more than second transparency conducting layer 130.Due to electrical conductivity falling for resistance
Number, therefore, the electrical conductivity of the electrical conductivity less than second transparency conducting layer 130 of first transparency conducting layer 120, i.e. institute
The first electrical conductivity is stated less than second electrical conductivity.
In the present embodiment, first transparency conducting layer 120 includes Part I 121 and two Part II 122.
The Part I 121 includes the first sublist face 121a, the second sublist face 121b, the 3rd sublist face 121c and the 4th sublist face
121d.The first sublist face 121a is oppositely arranged with the second sublist face 121b, and two Part II 122 are respectively arranged at
The first sublist face 121a is adjacent to the end of the first electrode supporter 110, and the Part II 122 is adjacent to described
The surface of one electrode support 110 is with the Part I 121 adjacent to the surface of the first electrode supporter 110 same flat
In face.The cross-sectional area of the Part I 121 is more than the cross-sectional area of the Part II 122, the 3rd sublist face
121c is set compared to the 4th sublist face 121d adjacent to the first electrode supporter 110, the 4th sublist face 121d
It is connected with first transparency conducting layer 120, second transparency conducting layer 130 is arranged on the Part II 122.
The light source 10 also include reflecting layer 180, the reflection groove 180 be arranged on first transparency conducting layer 120 with
Between the first electrode supporter 110.The reflecting layer 180 is used to cause first transparency conducting layer 120 and described the
The light of two transparency conducting layers 130 reflexes to first conductive-type semiconductor layer 140, the active layer 150 and described second leads
Electric type semiconductor layer 160.
Light source of the invention 10 includes first electrode supporter 110, the first transparency conducting layer 120, the second transparency conducting layer
130th, the first conductive-type semiconductor layer 140, active layer 150, the second conductive layer semiconductor layer 160 and second electrode 170, described
One electrode support 110 loads the first polar voltages, and for supporting first transparency conducting layer 120, the second electrically conducting transparent
The 130, first conductive-type semiconductor layer 140 of layer, active layer 150, the second conductive layer semiconductor layer 160 and second electrode 170.It is described
First conductive-type semiconductor layer 140, the active layer 150 and second conductive-type semiconductor layer 160 are set in turn in described
The middle part of the second transparency conducting layer 130, the second electrode 170 is arranged at the middle part of second conductive-type semiconductor layer 160,
The second electrode 170 loads the second polar voltages, first transparency conducting layer 120 and second transparency conducting layer 130
Conductance be respectively the first electrical conductivity and the second electrical conductivity, first electrical conductivity is less than second electrical conductivity.When described
Between first electrode supporter 110 and the second electrode 170 during on-load voltage, the first electrode supporter 110 with it is described
The major part of the electric current of second electrode 170 can be flowed into described conductive by described first by second transparency conducting layer 130
The ray structure of type semiconductor layer 140, the active layer 150 and second conductive-type semiconductor layer 160 composition, can be effective
Improve the luminous efficiency of the light source 10.
Present invention also offers a kind of backlight module, the backlight module includes light source 10, before the light source 10 is referred to
The description to light source 10 is stated, be will not be repeated here.
Above disclosed is only a kind of preferred embodiment of the invention, can not limit the power of the present invention with this certainly
Sharp scope, one of ordinary skill in the art will appreciate that realizing all or part of flow of above-described embodiment, and weighs according to the present invention
Profit requires made equivalent variations, still falls within the covered scope of invention.
Claims (8)
1. a kind of light source, it is characterised in that the light source includes first electrode supporter, the first transparency conducting layer, second transparent
Conductive layer, the first conductive-type semiconductor layer, active layer, the second conductive-type semiconductor layer and second electrode, the first electrode branch
Support body loads the first polar voltages, and for supporting first transparency conducting layer, second transparency conducting layer, described first
Conductive-type semiconductor layer, the active layer, second conductive-type semiconductor layer and the second electrode, described first transparent leads
Electric layer and second transparency conducting layer are set in turn on the same surface of the first electrode supporter, and described first is conductive
Type semiconductor layer, the active layer, second conductive-type semiconductor layer are set in turn in second transparency conducting layer
Portion, the second electrode is arranged at the middle part of second conductive-type semiconductor layer, and the second electrode loads the second polarity electricity
The conductance of pressure, first transparency conducting layer and second transparency conducting layer is respectively the first electrical conductivity and the second conductance
Rate, first electrical conductivity is less than second electrical conductivity, wherein, first transparency conducting layer includes Part I and two
Part II, the Part I includes the first sublist face, the second sublist face, the 3rd sublist face and the 4th sublist face, described the
One sublist face is oppositely arranged with the second sublist face, two Part II be respectively arranged at the first sublist face middle part and
The middle part in the second sublist face；Or, described two Part II are separately positioned on the first sublist face and the second sublist
Face is adjacent to the end of the first electrode supporter, and the Part II is adjacent to the surface of the first electrode supporter and institute
Part I is stated adjacent to the surface of the first electrode supporter in the same plane.
2. light source as claimed in claim 1, it is characterised in that first transparency conducting layer and second transparency conducting layer
Length is identical, and cross-sectional area is identical, the resistance of the resistivity more than second transparency conducting layer of first transparency conducting layer
Rate.
3. light source as claimed in claim 1, it is characterised in that the material of first transparency conducting layer is transparent with described second
The material of conductive layer is identical, the equivalent horizontal stroke of the equivalent cross-sectional area of first transparency conducting layer and second transparency conducting layer
Sectional area is identical, and first transparency conducting layer length more than second transparency conducting layer length.
4. light source as claimed in claim 3, it is characterised in that the cross-sectional area of the Part I is more than the Part II
Cross-sectional area, the 3rd sublist face is set compared to the 4th sublist face adjacent to the first electrode supporter, described
4th sublist face is connected with first transparency conducting layer, and second transparency conducting layer is arranged on the Part II.
5. light source as claimed in claim 4, it is characterised in that the light source also includes reflecting layer, and the reflecting layer is arranged on
Between first transparency conducting layer and the first electrode supporter.
6. light source as claimed in claim 5, it is characterised in that the reflecting layer include the first reflecting part and two it is second anti-
Penetrate part, first reflecting part is groove, the Part I for housing first transparency conducting layer, and described second is anti-
The side wall of part and connection first reflecting part is penetrated, and is arranged on the Part II with the first electrode branch
Between support body.
7. light source as claimed in claim 1, it is characterised in that first polar voltages are distinguished with second polar voltages
It is positive voltage and negative voltage, or first polar voltages are respectively negative voltage and positive electricity with second polar voltages
Pressure.
8. a kind of backlight module, it is characterised in that the backlight module includes the light as described in claim 1 to 7 any one
Source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510174668.2A CN104779332B (en) | 2015-04-14 | 2015-04-14 | Light source and backlight module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510174668.2A CN104779332B (en) | 2015-04-14 | 2015-04-14 | Light source and backlight module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104779332A CN104779332A (en) | 2015-07-15 |
| CN104779332B true CN104779332B (en) | 2017-07-04 |
Family
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510174668.2A Active CN104779332B (en) | 2015-04-14 | 2015-04-14 | Light source and backlight module |
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| Country | Link |
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| CN (1) | CN104779332B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1441503A (en) * | 2002-02-26 | 2003-09-10 | 株式会社藤仓 | Base sheet of transparent electrode |
| JP2008060331A (en) * | 2006-08-31 | 2008-03-13 | Rohm Co Ltd | Semiconductor luminescent element |
| CN102130104A (en) * | 2009-12-21 | 2011-07-20 | Lg伊诺特有限公司 | Light emitting device and method of manufacture |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1441503A (en) * | 2002-02-26 | 2003-09-10 | 株式会社藤仓 | Base sheet of transparent electrode |
| JP2008060331A (en) * | 2006-08-31 | 2008-03-13 | Rohm Co Ltd | Semiconductor luminescent element |
| CN102130104A (en) * | 2009-12-21 | 2011-07-20 | Lg伊诺特有限公司 | Light emitting device and method of manufacture |
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