CN104778992B - Wear-resisting erosion resistance is without coating copper cash and manufacture method thereof - Google Patents
Wear-resisting erosion resistance is without coating copper cash and manufacture method thereof Download PDFInfo
- Publication number
- CN104778992B CN104778992B CN201410010037.2A CN201410010037A CN104778992B CN 104778992 B CN104778992 B CN 104778992B CN 201410010037 A CN201410010037 A CN 201410010037A CN 104778992 B CN104778992 B CN 104778992B
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- CN
- China
- Prior art keywords
- coating
- copper
- wear
- chromium
- erosion resistance
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410010037.2A CN104778992B (en) | 2014-01-09 | 2014-01-09 | Wear-resisting erosion resistance is without coating copper cash and manufacture method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410010037.2A CN104778992B (en) | 2014-01-09 | 2014-01-09 | Wear-resisting erosion resistance is without coating copper cash and manufacture method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104778992A CN104778992A (en) | 2015-07-15 |
CN104778992B true CN104778992B (en) | 2016-10-19 |
Family
ID=53620415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410010037.2A Active CN104778992B (en) | 2014-01-09 | 2014-01-09 | Wear-resisting erosion resistance is without coating copper cash and manufacture method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104778992B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112111721B (en) * | 2020-09-25 | 2021-07-13 | 中国科学院兰州化学物理研究所 | Preparation method of CrCuC gradient CrCu composite carbon film bipolar plate |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1643675A (en) * | 2002-03-26 | 2005-07-20 | 住友电工运泰克株式会社 | Bonding wire and an integrated circuit device using the same |
CN101887942A (en) * | 2010-06-07 | 2010-11-17 | 江苏鑫钻新材料科技有限公司 | Metal baseplate provided with LED and manufacturing method thereof |
EP2413351A1 (en) * | 2009-03-23 | 2012-02-01 | Tanaka Denshi Kogyo K.K. | Coated copper wire for ball bonding |
TW201326435A (en) * | 2013-02-19 | 2013-07-01 | Truan-Sheng Lui | Copper-palladium alloy wire formed by solid phase diffusion reaction and the manufacturing method thereof |
CN103903669A (en) * | 2014-03-24 | 2014-07-02 | 大连理工常州研究院有限公司 | Copper-based electrical connector and manufacturing method thereof |
DE102013200308A1 (en) * | 2013-01-11 | 2014-07-17 | Infineon Technologies Ag | Bonding wire for use in power-electronic module and electrical component, has filament whose melting temperature at specific pressure is higher than melting temperature of matrix at specific pressure |
-
2014
- 2014-01-09 CN CN201410010037.2A patent/CN104778992B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1643675A (en) * | 2002-03-26 | 2005-07-20 | 住友电工运泰克株式会社 | Bonding wire and an integrated circuit device using the same |
EP2413351A1 (en) * | 2009-03-23 | 2012-02-01 | Tanaka Denshi Kogyo K.K. | Coated copper wire for ball bonding |
CN101887942A (en) * | 2010-06-07 | 2010-11-17 | 江苏鑫钻新材料科技有限公司 | Metal baseplate provided with LED and manufacturing method thereof |
DE102013200308A1 (en) * | 2013-01-11 | 2014-07-17 | Infineon Technologies Ag | Bonding wire for use in power-electronic module and electrical component, has filament whose melting temperature at specific pressure is higher than melting temperature of matrix at specific pressure |
TW201326435A (en) * | 2013-02-19 | 2013-07-01 | Truan-Sheng Lui | Copper-palladium alloy wire formed by solid phase diffusion reaction and the manufacturing method thereof |
CN103903669A (en) * | 2014-03-24 | 2014-07-02 | 大连理工常州研究院有限公司 | Copper-based electrical connector and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
CN104778992A (en) | 2015-07-15 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
EXSB | Decision made by sipo to initiate substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20201224 Address after: 4th floor, No.20, Lane 22, Daxue Road, Eastern District, Tainan, Taiwan, China Patentee after: Hong Feiyi Address before: Taiwan, Taipei, China Zhongshan District, No. 34 Xingan street, No. 1 Patentee before: Lv Chuansheng Patentee before: Hong Feiyi |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211130 Address after: Unit 8, 21 / F, Futura Plaza, 111-113 Haoming street, Kwun Tong, Hong Kong, China Patentee after: Zhuo Wang International Co.,Ltd. Address before: 4th floor, No.20, Lane 22, Daxue Road, Eastern District, Tainan, Taiwan, China Patentee before: Hong Feiyi |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211222 Address after: Room 208, New Territories apartment, Pak Shek Kok, Hong Kong Science Park, lakeside phase I phase II, Hong Kong, China Patentee after: JUNMA SCIENCE AND TECHNOLOGY (HONG KONG) CO.,LTD. Address before: Unit 8, 21 / F, Futura Plaza, 111-113 Haoming street, Kwun Tong, Hong Kong, China Patentee before: Zhuo Wang International Co.,Ltd. |
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TR01 | Transfer of patent right |