CN104778992B - Wear-resisting erosion resistance is without coating copper cash and manufacture method thereof - Google Patents
Wear-resisting erosion resistance is without coating copper cash and manufacture method thereof Download PDFInfo
- Publication number
- CN104778992B CN104778992B CN201410010037.2A CN201410010037A CN104778992B CN 104778992 B CN104778992 B CN 104778992B CN 201410010037 A CN201410010037 A CN 201410010037A CN 104778992 B CN104778992 B CN 104778992B
- Authority
- CN
- China
- Prior art keywords
- coating
- copper
- wear
- chromium
- erosion resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011248 coating agent Substances 0.000 title claims abstract description 151
- 238000000576 coating method Methods 0.000 title claims abstract description 151
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 120
- 239000010949 copper Substances 0.000 title claims abstract description 70
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000003628 erosive effect Effects 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 33
- 238000007747 plating Methods 0.000 claims abstract description 66
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 62
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 57
- 239000011651 chromium Substances 0.000 claims abstract description 57
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000003763 carbonization Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- ZBZHVBPVQIHFJN-UHFFFAOYSA-N trimethylalumane Chemical compound C[Al](C)C.C[Al](C)C ZBZHVBPVQIHFJN-UHFFFAOYSA-N 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 6
- 229910016384 Al4C3 Inorganic materials 0.000 claims description 4
- 150000001844 chromium Chemical class 0.000 claims description 4
- 230000001629 suppression Effects 0.000 claims description 4
- RMXTYBQNQCQHEU-UHFFFAOYSA-N ac1lawpn Chemical compound [Cr]#[Cr] RMXTYBQNQCQHEU-UHFFFAOYSA-N 0.000 claims 1
- 150000002736 metal compounds Chemical class 0.000 claims 1
- 230000008520 organization Effects 0.000 abstract description 17
- 238000005260 corrosion Methods 0.000 abstract description 13
- 230000007797 corrosion Effects 0.000 abstract description 11
- 239000010410 layer Substances 0.000 description 35
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 32
- 238000012360 testing method Methods 0.000 description 18
- 229910052763 palladium Inorganic materials 0.000 description 16
- 229910052799 carbon Inorganic materials 0.000 description 12
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000007547 defect Effects 0.000 description 8
- 238000005538 encapsulation Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910000881 Cu alloy Inorganic materials 0.000 description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 6
- -1 carbon ion Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 150000003839 salts Chemical class 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 239000007921 spray Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- 238000000635 electron micrograph Methods 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 241000218202 Coptis Species 0.000 description 2
- 235000002991 Coptis groenlandica Nutrition 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 2
- 229910001430 chromium ion Inorganic materials 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 150000002940 palladium Chemical class 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052573 porcelain Inorganic materials 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 208000005623 Carcinogenesis Diseases 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000036952 cancer formation Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 231100000504 carcinogenesis Toxicity 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- BFGKITSFLPAWGI-UHFFFAOYSA-N chromium(3+) Chemical compound [Cr+3] BFGKITSFLPAWGI-UHFFFAOYSA-N 0.000 description 1
- JOPOVCBBYLSVDA-UHFFFAOYSA-N chromium(6+) Chemical compound [Cr+6] JOPOVCBBYLSVDA-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000009920 food preservation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 231100000086 high toxicity Toxicity 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 230000009916 joint effect Effects 0.000 description 1
- 238000009940 knitting Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000005486 sulfidation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410010037.2A CN104778992B (en) | 2014-01-09 | 2014-01-09 | Wear-resisting erosion resistance is without coating copper cash and manufacture method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410010037.2A CN104778992B (en) | 2014-01-09 | 2014-01-09 | Wear-resisting erosion resistance is without coating copper cash and manufacture method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104778992A CN104778992A (en) | 2015-07-15 |
CN104778992B true CN104778992B (en) | 2016-10-19 |
Family
ID=53620415
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410010037.2A Active CN104778992B (en) | 2014-01-09 | 2014-01-09 | Wear-resisting erosion resistance is without coating copper cash and manufacture method thereof |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN104778992B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112111721B (en) * | 2020-09-25 | 2021-07-13 | 中国科学院兰州化学物理研究所 | Preparation method of CrCuC gradient CrCu composite carbon film bipolar plate |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1643675A (en) * | 2002-03-26 | 2005-07-20 | 住友电工运泰克株式会社 | Bonding wire and an integrated circuit device using the same |
CN101887942A (en) * | 2010-06-07 | 2010-11-17 | 江苏鑫钻新材料科技有限公司 | Metal baseplate provided with LED and manufacturing method thereof |
EP2413351A1 (en) * | 2009-03-23 | 2012-02-01 | Tanaka Denshi Kogyo K.K. | Coated copper wire for ball bonding |
TW201326435A (en) * | 2013-02-19 | 2013-07-01 | Truan-Sheng Lui | Copper-palladium alloy wire formed by solid phase diffusion reaction and the manufacturing method thereof |
CN103903669A (en) * | 2014-03-24 | 2014-07-02 | 大连理工常州研究院有限公司 | Copper-based electrical connector and manufacturing method thereof |
DE102013200308A1 (en) * | 2013-01-11 | 2014-07-17 | Infineon Technologies Ag | Bonding wire for use in power-electronic module and electrical component, has filament whose melting temperature at specific pressure is higher than melting temperature of matrix at specific pressure |
-
2014
- 2014-01-09 CN CN201410010037.2A patent/CN104778992B/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1643675A (en) * | 2002-03-26 | 2005-07-20 | 住友电工运泰克株式会社 | Bonding wire and an integrated circuit device using the same |
EP2413351A1 (en) * | 2009-03-23 | 2012-02-01 | Tanaka Denshi Kogyo K.K. | Coated copper wire for ball bonding |
CN101887942A (en) * | 2010-06-07 | 2010-11-17 | 江苏鑫钻新材料科技有限公司 | Metal baseplate provided with LED and manufacturing method thereof |
DE102013200308A1 (en) * | 2013-01-11 | 2014-07-17 | Infineon Technologies Ag | Bonding wire for use in power-electronic module and electrical component, has filament whose melting temperature at specific pressure is higher than melting temperature of matrix at specific pressure |
TW201326435A (en) * | 2013-02-19 | 2013-07-01 | Truan-Sheng Lui | Copper-palladium alloy wire formed by solid phase diffusion reaction and the manufacturing method thereof |
CN103903669A (en) * | 2014-03-24 | 2014-07-02 | 大连理工常州研究院有限公司 | Copper-based electrical connector and manufacturing method thereof |
Also Published As
Publication number | Publication date |
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CN104778992A (en) | 2015-07-15 |
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Effective date of registration: 20201224 Address after: 4th floor, No.20, Lane 22, Daxue Road, Eastern District, Tainan, Taiwan, China Patentee after: Hong Feiyi Address before: Taiwan, Taipei, China Zhongshan District, No. 34 Xingan street, No. 1 Patentee before: Lv Chuansheng Patentee before: Hong Feiyi |
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Effective date of registration: 20211130 Address after: Unit 8, 21 / F, Futura Plaza, 111-113 Haoming street, Kwun Tong, Hong Kong, China Patentee after: Zhuo Wang International Co.,Ltd. Address before: 4th floor, No.20, Lane 22, Daxue Road, Eastern District, Tainan, Taiwan, China Patentee before: Hong Feiyi |
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Effective date of registration: 20211222 Address after: Room 208, New Territories apartment, Pak Shek Kok, Hong Kong Science Park, lakeside phase I phase II, Hong Kong, China Patentee after: JUNMA SCIENCE AND TECHNOLOGY (HONG KONG) CO.,LTD. Address before: Unit 8, 21 / F, Futura Plaza, 111-113 Haoming street, Kwun Tong, Hong Kong, China Patentee before: Zhuo Wang International Co.,Ltd. |
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