CN104778288A - Double-pattern self-decomposition method of virtual pattern multi-layer stacking unit - Google Patents
Double-pattern self-decomposition method of virtual pattern multi-layer stacking unit Download PDFInfo
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- CN104778288A CN104778288A CN201410014615.XA CN201410014615A CN104778288A CN 104778288 A CN104778288 A CN 104778288A CN 201410014615 A CN201410014615 A CN 201410014615A CN 104778288 A CN104778288 A CN 104778288A
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Abstract
The invention relates to a double-pattern self-decomposition method of a virtual pattern multi-layer stacking unit and a territory double-pattern decomposition flow formed by the double-pattern self-decomposition method. The method comprises the following steps: (a) decomposing and defining an original virtual pattern multi-layer stacking unit as two new multi-layer stacking units A and B; (b) firstly, defining a filling start point, beginning to fill the stacking unit A from the filling start point to obtain a first stacking virtual pattern which occupies 1/4 of the whole virtual pattern; (c) transferring the filling start point rightwards, and filling the stacking unit B on one side of the first virtual pattern at a filling interval of the step (b); (d) upwards transferring the filling initial point, and filling the stacking unit B above the first virtual pattern at the same filling interval; and (e) transferring the filling start point to a right upper diagonal direction, and filling the stacking unit A in a residual space at the filling interval of the step (b). The method can realize double-pattern self decomposition.
Description
Technical field
The present invention relates to semiconductor applications, particularly, the self-digraph type decomposition method that the present invention relates to a kind of dummy pattern Multilayer stack unit and the domain digraph type decomposition process formed thus.
Background technology
For the increase day by day of the semiconductor storage demand of high power capacity, the integration density of these semiconductor storages receives the concern of people, in order to increase the integration density of semiconductor storage, have employed many diverse ways in prior art, such as by reducing wafer size and/or changing inner structure unit and form multiple storage unit on single wafer, changing for passing through the method that cellular construction increases integration density, having carried out attempting ditch and having reduced cellar area by the floor plan or change cell layout changing active area.
In the preparation technology of semiconductor devices, along with constantly reducing of device size, and adopt more advanced etching system (far ultraviolet, extreme ultra violet, EUV) delay, cause inevitably will using digraph type (double patterning in device fabrication process, DP) technology, in described digraph type technology, one of them domain arranges that to need to decompose (decomposed) be two Multilayer stack unit, such as, split according to two different features (features).
Along with constantly reducing of semiconductor technology device size, when described dimensions of semiconductor devices is contracted to Nano grade, manufacturability design (Design for Manufacturing, DFM) has become more and more important in semi-conductor industry nano-engineer flow and method.Described DFM refers to by the production efficiency of fast lifting chip yield and reduces for the purpose of production cost, rule in Unify legislation chip design, tool and method, thus control integration circuit copying to physics wafer better, being the design of process variability in a kind of measurable manufacture process, making the whole process from being designed into wafer manufacture reach optimization.
In described DFM process, automatically add dummy pattern (dummy) become more and more important, described dummy pattern can help improve the Density Distribution of target pattern, make described device performance more homogeneous, increase the process capability of the techniques such as planarization, photoetching, etching.
Due to digraph type (double patterning, DP) technology needs all patterns in layer to decompose on two masks, therefore, during data processing, automatically insert that dummy pattern is the same with original pattern pattern also to be needed to decompose in two different subdata types.Particularly for the dummy pattern of Multilayer stack, the dummy pattern of described Multilayer stack includes the layer that one deck or multilayer need digraph type to decompose, and described decomposition is more complicated and cost resource just.The process flow diagram of described decomposition as shown in Figure 1, first obtains pattern domain in the method, then inserts dummy pattern according to automatic dummy pattern formula, as shown in Figure 2 a.In the process inserting described dummy pattern, first defining original virtual pattern Multilayer stack unit is stack cell A, then disposablely inserts A stack cell to whole pattern domain and forms required complete dummy pattern.After filling dummy pattern, need to carry out the decomposition of digraph type together to described dummy pattern and original pattern domain, as shown in Figure 2 b, because described double decomposition is in this process simultaneously for described original pattern domain and the automatic dummy pattern that newly adds, cause this decomposable process to need to take many CPU working times, DP decomposition license and hardware resource, bring very large trouble to whole process.
Therefore, how the decomposition of digraph type of the prior art is improved, so as to eliminate and alleviate above-mentioned working time long, take the problem that many DP decompose license and hardware resource etc. and become the problem needing solution at present badly.
Summary of the invention
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in embodiment part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
The present invention is in order to solve problems of the prior art, provide a kind of self-digraph type decomposition method of dummy pattern Multilayer stack unit, described method is filled four dummy pattern stack cells by transfer filling starting point and is realized digraph type (doublepattern) the oneself fractionation that digraph type decomposition in Multilayer stack unit requires layer, comprising:
Step (a) decomposition definition original virtual pattern Multilayer stack unit is two new Multilayer stack unit A and B;
Step (b) performs the first filling step, first defines described filling starting point, fills A stack cell dummy pattern from described filling starting point, obtains the first stack virtual pattern accounting for whole dummy pattern 1/4;
Step (c) performs the second filling step, shifts described filling starting point to the right, fills B stack cell, obtain the second stack virtual pattern accounting for whole dummy pattern 1/4 with the side being interposed between described first dummy pattern between the filling of step (b);
Step (d) performs the 3rd filling step, upwards shifts described filling starting point, fills B stack cell, obtain the 3rd stack virtual pattern accounting for whole dummy pattern 1/4 with the top being interposed between described first dummy pattern between identical filling;
Step (e) performs the 4th filling step, shifts described filling starting point to upper right side diagonal, fills A stack cell, obtain the 4th stack virtual pattern to be interposed between the filling of step (b) in remaining space.
As preferably, in described step (a), A stack cell comprises described a certain digraph type and decomposes the A subdata type (Data Type) requiring layer; B stack cell comprises described a certain digraph type and decomposes the B subdata type requiring layer (with the main GDS No. that A is identical); Other designs of stack cell are identical.
As preferably, in described step (b), the filling of filling between stack cell is spaced apart as X and Y, fills starting point wherein, X=X
1+ 2X
2, Y=Y
1+ 2Y
2, described X
1for the size of the described original virtual pattern Multilayer stack unit length of side in the X-axis direction, described X
2for the filling interval in described original virtual pattern Multilayer stack unit X-direction; Described Y
1for the size of the described original virtual pattern Multilayer stack unit length of side in the Y-axis direction, described Y
2for the filling interval in described original virtual pattern Multilayer stack unit Y direction.
As preferably, in described step (c) and described step (d), the filling spacing of described B stack cell is X, Y;
Be X, Y in the filling spacing of the described A stack cell of described step (e).
As preferably, in described step (c), move right the filling starting point of described step (b) X in the X-axis direction
1+ X
2distance, obtain the second filling starting point, from the described second position of filling starting point, insert B stack cell with identical with step (b) filling interval X, Y, obtain the described second stack virtual pattern accounting for whole dummy pattern 1/4.
As preferably, in described step (d), move up the filling starting point of described step (b) Y in the Y-axis direction
1+ Y
2distance, obtain the 3rd and fill starting point, from the described 3rd position of filling starting point, insert B stack cell with filling interval X, Y that step (b) is identical, obtain the described 3rd stack virtual pattern accounting for whole dummy pattern 1/4.
As preferably, in described step (e), first the filling starting point of described step (b) to be moved right X along X-direction
1+ X
2distance, then to move up Y along Y direction
1+ Y
2distance, obtain the 4th and fill starting point, from the described 4th position of filling starting point, insert A stack cell with filling interval X, Y that step (b) is identical, obtain the remaining described 4th stack virtual pattern accounting for whole dummy pattern 1/4.
The present invention defines a kind of new domain digraph type decomposition process by the self-digraph type decomposition method of above-described dummy pattern Multilayer stack unit, and described flow process comprises:
Step (I) provide pattern domain;
Step (II) uses automatic dummy pattern to fill formula and inserts dummy pattern, select the self-digraph type decomposition method of above-mentioned dummy pattern Multilayer stack unit in this step, decompose to realize digraph type in described Multilayer stack dummy pattern digraph type (double pattern) the oneself decomposition requiring layer;
Step (III) only need carry out traditional use electric design automation manufacturer software license (EDA vendor license) digraph type for the master pattern (drawing layout) in described pattern domain decomposes;
Step (IV) exports the domain after decomposing.
Provide a kind of self-digraph type decomposition method of dummy pattern Multilayer stack unit in the present invention, described method is filled four dummy pattern stack cells by transfer filling starting point and is realized digraph type (double pattern) the oneself fractionation that digraph type decomposition in Multilayer stack unit requires layer.
The invention provides a kind of independently for the digraph type decomposition method of described dummy pattern storehouse, in the process by 4 filling steps, in each filling step, fill the dummy pattern of 1/4, realize and digraph type decomposition result same in prior art.Described method directly and simplify Multilayer stack unit A and B requiring layer automatic filling two new is decomposed to digraph type in a dummy pattern storehouse, do not need other special decomposition, save time and resource.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the invention and description thereof, be used for explaining device of the present invention and principle.In the accompanying drawings,
Fig. 1 is the method flow diagram in prior art, domain being carried out (comprising master pattern and dummy pattern stack cell pattern) to the decomposition of digraph type;
Fig. 2 a-2b is to the structural representation that dummy pattern stack cell decomposes in prior art;
Fig. 3 a-3d is the structural representation that the present invention one decomposes dummy pattern stack cell in embodiment particularly;
Fig. 4 is a kind of new domain digraph type decomposition process figure that the present invention one uses the self-digraph type decomposition method of dummy pattern Multilayer stack unit of the present invention particularly in embodiment and formed.
Embodiment
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it is obvious to the skilled person that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
Should give it is noted that term used here is only to describe specific embodiment, and be not intended to restricted root according to exemplary embodiment of the present invention.As used herein, unless the context clearly indicates otherwise, otherwise singulative be also intended to comprise plural form.In addition, it is to be further understood that, " comprise " when using term in this manual and/or " comprising " time, it indicates exists described feature, entirety, step, operation, element and/or assembly, but does not get rid of existence or additional other features one or more, entirety, step, operation, element, assembly and/or their combination.
Now, describe in more detail with reference to the accompanying drawings according to exemplary embodiment of the present invention.But these exemplary embodiments can multiple different form be implemented, and should not be interpreted as being only limited to the embodiments set forth herein.Should be understood that, providing these embodiments to be of the present inventionly disclose thorough and complete to make, and the design of these exemplary embodiments fully being conveyed to those of ordinary skill in the art.In the accompanying drawings, for the sake of clarity, use the element that identical Reference numeral represents identical, thus will omit description of them.
In order to solve the problem that digraph type decomposable process in prior art needs to take too much CPU working time, DP decomposes license and hardware resource in the present invention, providing a kind of self-digraph type decomposition method of dummy pattern Multilayer stack unit, comprising:
Step (a) decomposition definition original virtual pattern Multilayer stack unit is two new Multilayer stack unit A and B;
Step (b) performs the first filling step, first defines described filling starting point, fills A stack cell dummy pattern from described filling starting point, obtains the first stack virtual pattern accounting for whole dummy pattern 1/4;
Step (c) performs the second filling step, shifts described filling starting point to the right, fills B stack cell, obtain the second stack virtual pattern accounting for whole dummy pattern 1/4 with the side being interposed between described first dummy pattern between the filling of step (b);
Step (d) performs the 3rd filling step, upwards shifts described filling starting point, fills B stack cell, obtain the 3rd stack virtual pattern accounting for whole dummy pattern 1/4 with the top being interposed between described first dummy pattern between identical filling;
Step (e) performs the 4th filling step, shifts described filling starting point to upper right side diagonal, fills A stack cell, obtain the 4th stack virtual pattern to be interposed between the filling of step (b) in remaining space.
The present invention defines a kind of new domain digraph type decomposition process by the self-digraph type decomposition method of above-described dummy pattern Multilayer stack unit, and as shown in Figure 4, described flow process comprises:
Step (I) provide pattern domain;
Step (II) uses automatic dummy pattern to fill formula and inserts dummy pattern, select the self-digraph type decomposition method of above-mentioned dummy pattern Multilayer stack unit in this step, decompose to realize digraph type in described Multilayer stack dummy pattern digraph type (double pattern) the oneself decomposition requiring layer;
Step (III) only need carry out traditional use electric design automation manufacturer software license (EDA vendor license) digraph type for the master pattern (drawing layout) in described pattern domain decomposes;
Step (IV) exports the domain after decomposing.
Wherein, in described step (II), the self-digraph type decomposition method of dummy pattern Multilayer stack unit is comprised:
Step (a) decomposition definition original virtual pattern Multilayer stack unit is two new Multilayer stack unit A and B;
Step (b) performs the first filling step, first defines described filling starting point, fills A stack cell dummy pattern from described filling starting point, obtains the first stack virtual pattern accounting for whole dummy pattern 1/4;
Step (c) performs the second filling step, shifts described filling starting point to the right, fills B stack cell, obtain the second stack virtual pattern accounting for whole dummy pattern 1/4 with the side being interposed between described first dummy pattern between the filling of step (b);
Step (d) performs the 3rd filling step, upwards shifts described filling starting point, fills B stack cell, obtain the 3rd stack virtual pattern accounting for whole dummy pattern 1/4 with the top being interposed between described first dummy pattern between identical filling;
Step (e) performs the 4th filling step, shifts described filling starting point to upper right side diagonal, fills A stack cell, obtain the 4th stack virtual pattern to be interposed between the filling of step (b) in remaining space.
Below in conjunction with accompanying drawing and embodiment, the method that a kind of dummy pattern stack cell oneself of the present invention decomposes is further described.
Embodiment 1
The invention provides a kind of domain digraph type decomposition method, described method comprises:
Step (I) provide pattern domain;
Step (II) uses automatic dummy pattern to fill formula and inserts dummy pattern, decomposes in this step require that layer carries out digraph type (double pattern) oneself and decomposes to digraph type in described Multilayer stack dummy pattern;
Step (III) only need carry out traditional use electric design automation manufacturer software license (EDA vendor license) digraph type for the master pattern (drawing layout) in described pattern domain decomposes;
Step (IV) exports the domain after decomposing.
Described Multilayer stack dummy pattern oneself is decomposed into an independently step in the method, decompose separately with the pattern of pattern described in subsequent step oneself, compared to the prior art be two independently steps: step (II) and step (III), thus alleviate the problem that dummy pattern in prior art and original pattern pattern need in decomposable process to take too much CPU working time, DP decomposes license and hardware resource simultaneously, improve decomposition efficiency.
Be further described in detail for step (II) below, described step (II) comprising:
Step (a) decomposition definition original virtual pattern Multilayer stack unit is two new Multilayer stack unit A and B;
In this step, A stack cell comprises described a certain digraph type and decomposes the A subdata type (Data Type) requiring layer; B stack cell comprises described a certain digraph type and decomposes the B subdata type requiring layer (with the main GDS No. that A is identical); Other designs of stack cell are identical.
Step (b) performs the first filling step, first described filling starting point is defined, such as, in Fig. 3 a, arrow indication place is described filling starting point, from described filling starting point, fill A stack cell, obtains the first stack virtual pattern accounting for whole dummy pattern 1/4.
As preferably, the spacing between each A stack cell in described first stack virtual pattern is X, Y, wherein, and X=X
1+ 2X
2, Y=Y
1+ 2Y
2, described X
1for the size of the described original virtual pattern Multilayer stack unit length of side in the X-axis direction, described X
2for the filling interval in described original virtual pattern Multilayer stack unit X-direction; Described Y
1for the size of the described original virtual pattern Multilayer stack unit length of side in the Y-axis direction, described Y
2for the filling interval in described original virtual pattern Multilayer stack unit Y direction.
As preferably, described filling starting point is the place that the first dummy pattern starts to fill, generally in the described dummy pattern lower left corner, as the round dot of arrow indication in Fig. 3 a.Certain described filling starting point can also be arranged on the upper left corner of described first dummy pattern, be not limited only to certain a bit, insert situation according to dummy pattern to select, but it should be noted that for the first dummy pattern, described filling starting point must be unified, such as, be all positioned at the lower left corner or the upper left corner of described first dummy pattern.
After insertion A stack cell, above described A stack cell or below, side or every four the first dummy pattern centers position all can further insert other stack cell.Such as in step (c), fill B stack cell in the side of described A stack cell, obtain the second stack virtual pattern, as shown in Figure 3 b.
Step (c) performs the second filling step, shifts described filling starting point to the right, to fill B stack cell in the side of described first dummy pattern, obtains the second stack virtual pattern accounting for whole dummy pattern 1/4.
In this step in the X-axis direction, B stack cell is filled in the side of described A stack cell dummy pattern, and the distance between the dummy pattern of described A stack cell is X
1+ 2X
2after the insertion length of side is the B stack cell dummy pattern of X1, space between described A stack cell is filled, in the X-axis direction, because described A stack cell interval is arranged and the setting of described B stack cell interval, described A stack cell and described B stack cell are disposed adjacent, and distance is between the two X
2, achieve the filling completely of A stack cell side.
Particularly, in this step, in the X-axis direction described filling starting point is moved X
1+ X
2distance, obtain the second filling starting point, as shown in the rectangular block of the arrow indication in Fig. 3 b, from the described second position of filling starting point, insert B stack cell with spacing X, Y, obtain the second stack virtual pattern.
In step (d), perform the 3rd filling step, upwards shift described filling starting point, to fill B stack cell above described first dummy pattern, obtain the 3rd stack virtual pattern accounting for whole dummy pattern 1/4.
In this step in the Y-axis direction, above described A stack cell or below insert B stack cell, obtain the 3rd stack virtual pattern, the distance between described A stack cell is Y
1+ 2Y
2, when the insertion length of side is Y
1b stack cell after, described distance in the Y-axis direction between described A stack cell and described B stack cell is Y
2, achieve the filling completely above A stack cell.
Particularly, in this step, in the Y-axis direction described filling starting point is moved Y
1+ Y
2distance, obtain the 3rd and fill starting point, as shown in the leg-of-mutton pattern of arrow indication in Fig. 3 c, from the described 3rd position of filling starting point, insert B stack cell with spacing X, Y, obtain the 3rd stack virtual pattern.
Step (e) performs the 4th filling step, shifts described filling starting point to upper right side diagonal, fills A stack cell, obtain the 4th stack virtual pattern to be interposed between the filling of step (b) in remaining space.
Wherein, in this step after insertion described first stack virtual pattern, the second stack virtual pattern and the 3rd stack virtual pattern, only above the B stack cell of described second stack virtual pattern, the B stack cell side of described 3rd stack virtual pattern leaves space, and a stack cell only can be inserted in described space, A stack cell is entered, to realize the filling of all dummy patterns at this spatial interpolation.
Particularly, first in the X-axis direction described filling starting point is moved X
1+ X
2distance, then in Y-axis, continue mobile Y
1+ Y
2distance, obtain the 4th and fill starting point, as shown in the criss-cross pattern of arrow indication in Fig. 3 d, from the described 4th position of filling starting point, insert A stack cell with spacing X, Y, obtain the 4th stack virtual pattern.
As other implementation method, other insertion method can also be selected in this step, such as direct based on described second filling starting point, fill starting point by described second and move Y in the Y-axis direction
1+ Y
2distance, obtain the 4th and fill starting point, insert A stack cell in the described 4th position of filling starting point, obtain the 4th stack virtual pattern.
Or directly fill based on starting point by the described 3rd, fill starting point by the described 3rd and move X in the X-axis direction
1+ X
2distance, obtain the 4th and fill starting point, insert A stack cell in the described 4th position of filling starting point, obtain the 4th stack virtual pattern.
As preferably, in the process, in described first stack virtual pattern, the second stack virtual pattern, the 3rd stack virtual pattern and the 4th stack virtual pattern, the size of dummy pattern is the same, and its length of side is respectively X
1and Y
1, as a whole, the distance between adjacent described dummy pattern is respectively X in X-axis and Y-axis
2and Y
2, wherein said X
1, Y
1, X
2and Y
2value be not limited to a certain scope, can adjust as required.
The invention provides a kind of independently for the digraph type decomposition method of described dummy pattern storehouse, in the process by 4 filling steps, in each filling step, fill the dummy pattern of 1/4, realize and digraph type decomposition result same in prior art.Described method is direct and decomposing digraph type in a dummy pattern storehouse of simplifying requires layer automatic filling two kinds of stack cells, does not need other special decomposition, saves time and resource.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.
Claims (8)
1. a self-digraph type decomposition method for dummy pattern Multilayer stack unit, described method is filled four dummy pattern stack cells by transfer filling starting point and is realized the digraph type oneself fractionation that digraph type decomposition in Multilayer stack unit requires layer, comprising:
Step (a) decomposition definition original virtual pattern Multilayer stack unit is two new Multilayer stack unit A and B;
Step (b) performs the first filling step, first defines described filling starting point, from described filling starting point, fill A stack cell, obtains the first stack virtual pattern accounting for whole dummy pattern 1/4;
Step (c) performs the second filling step, shifts described filling starting point to the right, fills B stack cell, obtain the second stack virtual pattern accounting for whole dummy pattern 1/4 with the side being interposed between described first dummy pattern between the filling of described step (b);
Step (d) performs the 3rd filling step, upwards shifts described filling starting point, fills B stack cell, obtain the 3rd stack virtual pattern accounting for whole dummy pattern 1/4 with the top being interposed between described first dummy pattern between the filling of described step (b);
Step (e) performs the 4th filling step, shifts described filling starting point to upper right side diagonal, fills A stack cell, obtain the 4th stack virtual pattern to be interposed between the filling of step (b) in remaining space.
2. method according to claim 1, is characterized in that, in described step (a), A stack cell comprises described digraph type and decomposes the A subdata type requiring layer; B stack cell comprises described digraph type and decomposes the B subdata type requiring layer; Described A stack cell is identical with other designs of described B stack cell.
3. method according to claim 1, is characterized in that, in described step (b), the distance of filling the filling interval between stack cell is X and Y, wherein, and X=X
1+ 2X
2, Y=Y
1+ 2Y
2;
Described X
1for the size of the described original virtual pattern Multilayer stack unit length of side in the X-axis direction, described X
2for the filling interval in described original virtual pattern Multilayer stack unit X-direction; Described Y
1for the size of the described original virtual pattern Multilayer stack unit length of side in the Y-axis direction, described Y
2for the filling interval in described original virtual pattern Multilayer stack unit Y direction.
4. method according to claim 3, is characterized in that, in described step (c) and described step (d), the filling spacing of described B stack cell is X, Y;
Be X, Y in the filling spacing of the described A stack cell of described step (e).
5. method according to claim 3, is characterized in that, in described step (c), move right the filling starting point of described step (b) X in the X-axis direction
1+ X
2distance, obtain the second filling starting point, from the described second position of filling starting point, insert B stack cell with identical with described step (b) filling interval X, Y, obtain the described second stack virtual pattern accounting for whole dummy pattern 1/4.
6. method according to claim 3, is characterized in that, in described step (d), move up the filling starting point of described step (b) Y in the Y-axis direction
1+ Y
2distance, obtain the 3rd and fill starting point, from the described 3rd position of filling starting point, insert B stack cell with filling interval X, Y that step (b) is identical, obtain the described 3rd stack virtual pattern accounting for whole dummy pattern 1/4.
7. method according to claim 3, is characterized in that, in described step (e), first the filling starting point of described step (b) to be moved right X along X-direction
1+ X
2distance, then to move up Y along Y direction
1+ Y
2distance, obtain the 4th and fill starting point, from the described 4th position of filling starting point, insert A stack cell with filling interval X, Y that step (b) is identical, obtain the remaining described 4th stack virtual pattern accounting for whole dummy pattern 1/4.
8., based on a domain digraph type decomposition method for the self-digraph type decomposition method of the dummy pattern Multilayer stack unit described in claim 1 to 7, described method comprises:
Step (I) provide pattern domain;
Step (II) uses automatic dummy pattern to fill formula and inserts dummy pattern, select the self-digraph type decomposition method of one of claim 1 to 7 described dummy pattern Multilayer stack unit in this step, decompose to realize digraph type in described Multilayer stack dummy pattern the digraph type oneself decomposition requiring layer;
Step (III) carries out the decomposition of digraph type for the master pattern in described pattern domain;
Step (IV) exports the domain after decomposing.
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| US20090106727A1 (en) * | 2004-06-23 | 2009-04-23 | International Business Machines Corporation | Methods and systems for layout and routing using alternating aperture phase shift masks |
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