CN104778133B - Increase the method in smart card programmable read only memory life-span - Google Patents
Increase the method in smart card programmable read only memory life-span Download PDFInfo
- Publication number
- CN104778133B CN104778133B CN201410008735.9A CN201410008735A CN104778133B CN 104778133 B CN104778133 B CN 104778133B CN 201410008735 A CN201410008735 A CN 201410008735A CN 104778133 B CN104778133 B CN 104778133B
- Authority
- CN
- China
- Prior art keywords
- value
- span
- programmable read
- life
- smart card
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Techniques For Improving Reliability Of Storages (AREA)
Abstract
Increase the method in smart card programmable read only memory life-span, including step the invention discloses a kind of:(1) apply for two variables Ds 1 and D2 in programmable read only memory, be stored in respectively in different life-span units；(2) established by cable on the beginning, check D1, D2 data value；(3) issued transaction is called.The erasing and writing life of programmable read-only memory can be lifted one times by it.
Description
Technical field
The present invention relates to programmable read only memory field, more particularly to a kind of increase smart card programmable read only memory
The method in life-span.
Background technology
Current smart cards chip is in programmable read only memory（EEPROM/FLASH）, can't on the erasing and writing life of module
The need for fully meeting practical application.Especially homemade chip, most at present also to rest on 100,000 sub-levels.In addition, intelligence
Energy card operation system needs application data to carry out power down protection, i.e. issued transaction, and in the prior art, in power down protection mistake
Need to carry out tagging position and clear two steps of marker bit in journey, it is so, just at least erasable twice in a power down protection, make
Obtain programmable read only memory（EEPROM/FLASH）Erasing and writing life shorten, at most can only achieve chip in itself equivalent to the life-span
The half in life-span.The basic reasonses of this problem are caused to be, protection flag needs to be operated twice.Therefore, how to subtract
Less to protection flag number of operations just into a problem in terms of smart card operating system.
The content of the invention
In view of the shortcomings of the prior art, smart card programmable read only memory can be increased it is an object of the invention to provide one kind
The method in life-span.
To achieve the above object, the present invention is adopted the following technical scheme that：
Increase the method in smart card programmable read only memory life-span, it is characterised in that comprise the following steps：
（1）Apply for two variables Ds 1 and D2 in programmable read only memory, be stored in respectively in different life-span units；
（2）On establish by cable the beginning, check D1, D2 data value：
If one is X in two data values, another is Y, then transaction recovery processing is carried out, after the completion of recovery, by D2
Value be set to D1 currency, wherein, X, Y are preset data value, and X is different from Y；
If two data values are all X or Y, electric recovering step in affairs is directly skipped；
If having more than one data value in two data values neither X is nor Y, by D1, D2 be set to simultaneously X or
Person Y, then skips electric recovering step in affairs；
（3）Call issued transaction：
The first step, the initial data of destination address that first will be erasable backups to affairs backup area；
Second step, then reads D1 value, if D1 value is Y, and the value for setting D1 is X；If D1 value is X,
The value for setting D1 is Y；If D1 value is neither Y is nor X, re-powers initialization；
3rd step, then writes new data in destination address；
4th step, the value for finally setting D2 is D1 currencys, end transaction processing.
As the further optimization of such scheme, the smart card is JAVA card.
As the further optimization of such scheme, the life-span unit is page.
As the further optimization of such scheme, the X is AA, and Y is 55.
Beneficial effects of the present invention are mainly shown as：Using technical scheme, in a power down protection, to two
Individual flag bit it is each it is erasable once, you can correctly reflect whether protection process completes, so that by the wiping of programmable read-only memory
Write one times of life-span upgrading.
Brief description of the drawings
Fig. 1 is the issued transaction flow schematic diagram in an exemplary embodiments of the invention.
Fig. 2 is that electricity recovers handling process schematic diagram in affairs in an exemplary embodiments of the invention.
Embodiment
More specific detail is made to technical scheme below in conjunction with accompanying drawing and an embodiment.
As illustrated in fig. 1 and 2, increase the method in smart card programmable read only memory life-span, comprise the following steps：
（1）Apply for two variables Ds 1 and D2 in programmable read only memory, be stored in respectively in different life-span units；
（2）On establish by cable the beginning, check D1, D2 data value：
If one is AA in two data values, another is 55, then carries out transaction recovery processing, after the completion of recovery, will
D2 value is set to D1 currency, and wherein AA, 55 are default values, and AA is not equal to 55；
If two data values are all AA or 55, electric recovering step in affairs is directly skipped；
If having more than one data value in two data values, neither D1, D2 nor 55, are then set to by AA simultaneously
AA or 55, then skips electric recovering step in affairs；
（3）Call issued transaction：
The first step, the initial data of destination address that first will be erasable backups to affairs backup area；
Second step, then reads D1 value, if D1 value is 55, and the value for setting D1 is AA；If D1 value is AA,
The value for then setting D1 is 55；If D1 value is neither 55 nor AA, re-powers initialization；
3rd step, then writes new data in destination address；
4th step, the value for finally setting D2 is D1 currencys, end transaction processing.
The smart card is JAVA card, and the life-span unit is page.
The present embodiment central principle therein is：When upper electric, compare two variables Ds 1, D2 value, if identical, table
Bright transaction protection terminates, it is not necessary to recover data；If the value of two addresses is differed, show that data protection is not completed, need
Recover data；If D1 value is not AA nor 55, show that protection does not have started, it is not necessary to recover data；If D2
Value be not AA nor 55, then show that protection is over, it is not required that recover data.
Affair mechanism is in power down protection, it is desirable to have a power down protection mark, existing to show whether protection process completes
It is all that protection marker bit is set when power down protection starts to have technology, after the completion of protection end or rollback, removes mark.This hair
A kind of new method that a person of good sense creates, reduces to protecting the erasable number of times of marker bit, same may be programmed only so as to reduce
Read memory（EEPROM/FLASH）Erasable number of times, and then cause programmable read only memory（EEPROM/FLASH）It is erasable
Life-span obtains maximum lift.
In addition to the implementation, the present invention can also have other embodiment.All use equivalent substitution or equivalent transformation shape
Into technical scheme, all fall within the protection domain of application claims.
Claims (3)
1. increase the method in smart card programmable read only memory life-span, it is characterised in that comprise the following steps：
(1) apply for two variables Ds 1 and D2 in programmable read only memory, be stored in respectively in different life-span units；
(2) established by cable on the beginning, check D1, D2 data value：
If one is X in two data values, another is Y, then transaction recovery processing is carried out, after the completion of recovery, by D2 value
D1 currency is set to, wherein, X, Y are preset data value, and X is different from Y；
If two data values are all X or Y, electric recovering step in affairs is directly skipped；
If having more than one data value in two data values neither X is nor Y, D1, D2 are set to X or Y simultaneously,
Then electric recovering step in affairs is skipped；
(3) issued transaction is called：
The first step, the initial data of destination address that first will be erasable backups to affairs backup area；
Second step, then reads D1 value, if D1 value is Y, and the value for setting D1 is X；If D1 value is X, set
D1 value is Y；If D1 value is neither Y is nor X, re-powers initialization；
3rd step, then writes new data in destination address；
4th step, the value for finally setting D2 is D1 currencys, end transaction processing；
The life-span unit is page.
2. the method in increase smart card programmable read only memory life-span according to claim 1, it is characterised in that described
Smart card is JAVA card.
3. the method in increase smart card programmable read only memory life-span according to claim 1, it is characterised in that described
X is AA, and Y is 55.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410008735.9A CN104778133B (en) | 2014-01-09 | 2014-01-09 | Increase the method in smart card programmable read only memory life-span |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410008735.9A CN104778133B (en) | 2014-01-09 | 2014-01-09 | Increase the method in smart card programmable read only memory life-span |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104778133A CN104778133A (en) | 2015-07-15 |
| CN104778133B true CN104778133B (en) | 2017-09-22 |
Family
ID=53619611
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410008735.9A Active CN104778133B (en) | 2014-01-09 | 2014-01-09 | Increase the method in smart card programmable read only memory life-span |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104778133B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6970970B2 (en) * | 2002-10-01 | 2005-11-29 | Electronics And Telecommunications Research Institute | Method of storing data in a non-volatile memory and apparatus therefor |
| CN101226604A (en) * | 2007-01-19 | 2008-07-23 | 东信和平智能卡股份有限公司 | Smart card and data write-in method |
| CN102005245A (en) * | 2010-11-30 | 2011-04-06 | 公安部第三研究所 | Intelligent card erasing and writing protection method |
| CN102541690A (en) * | 2011-12-23 | 2012-07-04 | 北京握奇数据系统有限公司 | Intelligent card and method for recovering data |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101882331B (en) * | 2009-05-08 | 2012-07-18 | 鸿富锦精密工业（深圳）有限公司 | Electronic equipment and method for recording use time |
-
2014
- 2014-01-09 CN CN201410008735.9A patent/CN104778133B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6970970B2 (en) * | 2002-10-01 | 2005-11-29 | Electronics And Telecommunications Research Institute | Method of storing data in a non-volatile memory and apparatus therefor |
| CN101226604A (en) * | 2007-01-19 | 2008-07-23 | 东信和平智能卡股份有限公司 | Smart card and data write-in method |
| CN102005245A (en) * | 2010-11-30 | 2011-04-06 | 公安部第三研究所 | Intelligent card erasing and writing protection method |
| CN102541690A (en) * | 2011-12-23 | 2012-07-04 | 北京握奇数据系统有限公司 | Intelligent card and method for recovering data |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104778133A (en) | 2015-07-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106776362B (en) | The control method and device of memory | |
| CN104200843A (en) | Flash memory burner, burning system and burning method | |
| CN102819442B (en) | A kind of method and system of embedded device program burn writing | |
| CN106484316A (en) | Method for managing a memory device, memory device and controller | |
| CN101197006B (en) | Smart card and data write-in method | |
| CN101699476B (en) | Data processing method and device of smart cards | |
| CN102902626B (en) | Block management method, Memory Controller and memorizer memory devices | |
| CN102033814A (en) | Method for accessing flash memory and relevant memory device | |
| CN103996412A (en) | Power-fail protection method applied to intelligent-card nonvolatile memories | |
| CN101561950B (en) | Method and device for processing data of intelligent card | |
| CN102043725B (en) | Data writing method for flash memory as well as controller and storage system thereof | |
| CN107463341A (en) | Method for deleting, device and the mobile terminal of FLASH chip | |
| CN109697170A (en) | The method of access flash memory module and relevant flash controller and electronic device | |
| TW201329712A (en) | Data processing method, memory controller and memory storage device | |
| CN103778964A (en) | Processing and using method, device and system for NAND Flash programmed data, | |
| CN107291374A (en) | Method and device for recording use time of data block | |
| CN103488572B (en) | Data storage device and data clearing method | |
| CN204155612U (en) | The burned device of flash memory and burned system | |
| CN102446137B (en) | Method for writing data, Memory Controller and memorizer memory devices | |
| CN104778133B (en) | Increase the method in smart card programmable read only memory life-span | |
| CN102629212A (en) | Method for indirectly programming to NANDFLASH based on J-LINK | |
| CN108932209A (en) | Memory device and its operating method | |
| US9313651B2 (en) | Memory system and method of controlling memory system | |
| CN203773957U (en) | Repeated writing device of OTP (one time programmable) register | |
| CN107122308A (en) | Average abrasion method, memory control circuit unit and internal storing memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210122 Address after: 518061 Room 303, 3 / F, building 5, software industry base, No. 11, 13 and 15, Haitian 1st Road, Binhai community, Yuehai street, Nanshan District, Shenzhen City, Guangdong Province Patentee after: Shenzhen rongka Technology Co.,Ltd. Address before: 215200 428, building a, science and Technology Pioneer Park, No. 2358, Chang'an Road, Wujiang Economic and Technological Development Zone, Suzhou City, Jiangsu Province Patentee before: RONGCARD Co.,Ltd. |