CN104767948B - A kind of satellite receiver high-frequency head LNB biasing circuits - Google Patents
A kind of satellite receiver high-frequency head LNB biasing circuits Download PDFInfo
- Publication number
- CN104767948B CN104767948B CN201510167999.3A CN201510167999A CN104767948B CN 104767948 B CN104767948 B CN 104767948B CN 201510167999 A CN201510167999 A CN 201510167999A CN 104767948 B CN104767948 B CN 104767948B
- Authority
- CN
- China
- Prior art keywords
- constant current
- constant
- satellite receiver
- input
- frequency head
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
Abstract
The invention discloses a kind of satellite receiver high-frequency head LNB biasing circuits, the circuit is mainly made up of four parts：Part I is the changeable constant-current control module in two tunnels, drives microwave radio bipolar transistor, and two tunnel constant currents share a constant current source；Part II is 5V reference voltage modules, exportable 70mA current capacity；Part III is 22KHz audio detection modules, and it is according to whether audio signal be present to export the control signal of varying level；Part IV is polarity judge module, passes through the action of the level change control switching switch of input voltage.Special line architecture and pin arrangements design, it is less than the pin number with said function biasing circuit, while simplify the design complexity of pcb board, the frequency microwave pcb board area of costliness is reduced, reduces complete machine cost.
Description
Technical field
The present invention relates to a kind of satellite receiver high-frequency head LNB biasing circuits, belong to technical field of integrated circuits.
Background technology
Satellite television receiving system is made up of multi-sat outdoor unit and satellite set top box, and multi-sat outdoor unit includes：Reflection
Surface antenna and low noise amplifier (Low Noise Block, LNB), LNB is also known as satellite receiver high-frequency head, and it is by low noise
Acoustical power amplifier is formed with low-noise mixer, local oscillator, and the satellite-signal for antenna to be received carries out low noise
Amplification and frequency reducing.LNB biasing circuits are exactly the circuit to LNB power supplies.
In one's early years, the frequency microwave active device for dominating low noise amplifier LNB is the MESFET works based on GaAs
Skill.Into 21 century, satellite communication, high-speed wideband, personal radio communication industry propose higher to efficiency, linear and low noise
Requirement, frequency microwave low noise amplification turns to HBT (HBT) technique, and promotes GaAs puppet kenel high
The further maturation of electron mobility transistor (GaAs pHEMT) technology.Up to the present, GaAs pHEMT techniques skill
The prevailing technology technology of art or satellite receiver high-frequency head first order low noise amplification device.In general LNB biasing circuits are main
It is to be powered to using the FET (FET) of GaAs pHEMT technologies.
But the GaAs cost of raw material will be higher by that silicon is a lot, ultimately result in radio-frequency devices using GaAs technology into
This is higher；With the development of technology, stepped up using the frequency microwave device property of germanium silicon (SiGe) technology, in cutoff frequency
Improved in the problems such as rate (fT) and breakdown voltage (Breakdown voltage) are too low and practicality increasingly, and processing procedure into
It is ripe, degree of integration is high, there is lower-cost advantage.
The content of the invention
The technical problems to be solved by the invention are：A kind of satellite receiver high-frequency head LNB biasing circuits are provided, using list
One constant-current source drives two frequency microwave bipolar transistors (BJT) using silicon technology, one of transistor is in constant current
During state, another transistor is in non-constant current state.
The present invention uses following technical scheme to solve above-mentioned technical problem：
A kind of satellite receiver high-frequency head LNB biasing circuits, for driving two road transistors, including two using single constant-current source
The changeable constant-current control module in road, polarity judge module, the changeable constant-current control module in two tunnels include single constant-current source list
Member, constant current value adjustment unit and switching switch；
The polarity judge module is used to gather supply voltage, and switchs outputting cutting to switching according to the size of supply voltage
Change signal；The switching switch controls being turned on and off for two road transistors according to switching signal；The constant current value adjustment unit
For gathering outside constant-current control signal, constant current value size is adjusted and to single constant current source unit according to outside constant-current control signal
Output；The single constant current source unit is used to receive the constant current value after regulation, the road transistor work of driving two.
Preferably, the single constant current source unit includes first, second output end, switching switch include two inputs,
Two output ends；The input of the polarity judge module is connected with power supply, and output end and the switching of polarity judge module switch
One of input connection；Switch base stage of two output ends of switch respectively with two road transistors to be connected；Outside constant current
Control signal is inputted by the input of constant current value adjustment unit, the output end of constant current value adjustment unit and single constant current source unit
Input is connected, and the colelctor electrode of the first output end of single constant current source unit respectively with two road transistors is connected, single constant-current source
Second output end of unit is connected with another input of switching switch.
Further, the biasing circuit also includes 5V reference voltage modules, the input of the 5V reference voltage modules with
Power supply connects, the output ends of 5V reference voltage modules output end as the reference voltage；The 5V reference voltage modules are used to gather
Supply voltage, and export 5V reference voltages.
Further, the biasing circuit also includes 22KHz audio detection modules, the 22KHz audio detections module it is defeated
Enter end to be connected with power supply, the output end of 22KHz audio detection modules is as control voltage output end；The 22KHz audio detections
Module is used to judge in supply voltage with the presence or absence of 22KHz audio signals and whether the audio frequency signal amplitude is in 100mV ~ 300mV
Between, if then exporting high level, otherwise export low level.
Preferably, the also external resistance of the input of the constant current value adjustment unit, the size of the resistance for 17K Ω ~
50KΩ。
Preferably, the switching switch is with the one of which in lower switch：Single-pole double-throw switch (SPDT), double-point double-throw switch.
Preferably, two road transistor is frequency microwave bipolar transistor.
Preferably, the 5V reference voltage modules are low pressure difference linear voltage regulator.
The present invention compared with prior art, has following technique effect using above technical scheme：
1st, satellite receiver high-frequency head LNB biasing circuits of the present invention, the bipolar crystalline substance of frequency microwave using silicon technology can be driven
Body pipe (BJT)；And in general LNB biasing circuits can only drive Metal-oxide-silicon field-effect transistor or junction field brilliant
Body pipe.
2nd, satellite receiver high-frequency head LNB biasing circuits of the present invention, two frequency microwave bipolar transistors only need a constant current
Output end；And in general LNB configuration circuits then need to be directed to two frequency microwave bipolar transistors, two constant current outputs are configured
End.
3rd, satellite receiver high-frequency head LNB biasing circuits of the present invention, different from random arrangement of the existing biasing circuit to pin,
Special optimization the putting in order of circuit pin, required frequency microwave PCB surface product can be reduced, reduces complete machine cost.
Brief description of the drawings
Fig. 1 is the internal frame diagram of satellite receiver high-frequency head LNB biasing circuits of the present invention.
Fig. 2 is the fundamental diagram of satellite receiver high-frequency head LNB biasing circuits of the present invention.
Fig. 3 is the pin arrangements figure of satellite receiver high-frequency head LNB biasing circuits of the present invention.
Embodiment
Embodiments of the present invention are described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning
Same or similar element is represented to same or similar label eventually or there is the element of same or like function.Below by ginseng
The embodiment for examining accompanying drawing description is exemplary, is only used for explaining the present invention, and is not construed as limiting the claims.
The purpose of the present invention is to provide DC bias current and bias voltage for a kind of satellite receiver high-frequency head LNB systems
Circuit, and this satellite receiver high-frequency head employs the frequency microwave bipolar transistor based on silicon technology as low noise amplification
Device.In addition, to reduce the area of the packaging pin quantity of circuit and expensive frequency microwave pcb board, the present invention redesigns
A kind of new current constant control framework, special design is have also been made in the order arrangement of circuit pin.Due to frequency microwave pcb board
Cost it is higher, reduce required frequency microwave pcb board area in the design of LNB modules, can reduce BOM costs, improve product
Competitiveness.
As shown in figure 1, satellite receiver high-frequency head LNB biasing circuits of the present invention, are divided into four parts, Part I two
The changeable constant-current control module in road, the changeable constant-current control module in two tunnels include single constant current source unit, constant current value adjustment unit
Switched with switching, switching switch can control two road frequency microwave transistors to be in constant current state respectively, when 5 pin input voltage sources electricity
During flat change, the opening and closing of changeable two road constant-current source are switched by switching.Part II is 5V reference voltage modules；The
Three parts are 22KHz audio detection modules, and it is according to whether there is 22KHz audio signals in input voltage source, in the output of 7 pin not
With the control signal of level；Part IV is polarity judge module, is switched by the level change control switching of input voltage
Action, switching switch can be single-pole double-throw switch (SPDT), or double-point double-throw switch, all be accomplished that when wherein opening all the way
The function that then another way is closed.
Polarity judge module is used to gather supply voltage, and is believed according to the size of supply voltage to switching switch output switching
Number；Switching switch is used to receive switching signal, and controls being turned on and off for two road transistors according to switching signal；Constant current value is adjusted
Section unit is used to gather outside constant-current control signal, and constant current value size is adjusted and to single constant current according to outside constant-current control signal
Source exports；Single constant current source unit is used to receive the constant current value after regulation, the road transistor work of driving two.
As shown in Fig. 2 for the fundamental diagram of satellite receiver high-frequency head LNB biasing circuits, connect in the outside of biasing circuit
Two microwave radios bipolar transistor T1 and T2 are met, 1 pin, 2 pin of the changeable constant-current control module in the tunnel of Part I two lead to respectively
The RC wave filters crossed an inductance and two electric capacity pi type filter formed or be in series by a resistance and an electric capacity connect
The base stage of two microwave radio bipolar transistors is connected to, 8 pin constant current output ends are by an inductance and the π types of two electric capacity compositions
Wave filter or the RC wave filters being in series by a resistance and an electric capacity are connected to two microwave radio bipolar transistors and are total to
Colelctor electrode.The external resistance of 3 pin, the Standard resistance range of the resistance is 17K Ω ~ 50K Ω, is used as current constant control, when outside 3 pin
When the size of connecting resistance is 22K Ω, typical constant current value is 10mA.When the incoming level of 5 pin is changed into 18V from 13V, 1 can control
The opening and closing of pin, 2 pin, so as to realize the switching of two road constant-current sources, such as when the incoming levels of 5 pin is 13V, 1 pin opens 2
Pin is closed, and when the incoming level of 5 pin is changed into 18V from 13V, 1 pin is closed 2 pin and opened, when the incoming level of 5 pin is changed into from 18V
During 13V, 1 pin is opened 2 pin and closed, and another pin is closed when one of pin is opened, by that analogy.
The 5V reference voltage modules of Part II, using the linear voltage regulator of low pressure drop, when the electricity of Input voltage terminal
When pressure changes from 8V to 22V, output 5V reference voltages can be stablized, output current ability reaches 70mA.
Part III is 22KHz audio detection modules, when input voltage source includes 22KHz audio signals and the audio
When signal amplitude is between 100mV ~ 300mV, the level that 7 pin export can be made by control that low transition is high level, i.e. 7 pin
Voltage output current potential is controlled by the 22KHz audio signals in 5 pin input powers.
Part IV polarity judge module, pass through level change control switching switch and the two road transistors of input voltage source
Connection.
As shown in figure 3, being circuit pin arrangements figure, the pin that one-way satellite receives tuner LNB biasing circuits is reduced to 8
Pin, encapsulated using HTSOP8 or DFN8, the design of circuit pin is by 1 pin base drive 1,2 pin base drives 2,3 pin current constant controls, 4
Pin, 5 pin power inputs, 6 pin reference voltage outputs, 7 foot control voltage outputs, 8 pin share constant current output order arrangement.This
The special pin design of kind optimization can reduce the area of the expensive frequency microwave pcb board used in complete machine, reduce the BOM of complete machine
Cost, improve the competitiveness of product in market.
The technological thought of above example only to illustrate the invention, it is impossible to protection scope of the present invention is limited with this, it is every
According to technological thought proposed by the present invention, any change done on the basis of technical scheme, the scope of the present invention is each fallen within
Within.
Claims (7)
- A kind of 1. satellite receiver high-frequency head LNB biasing circuits, for driving the two bipolar crystalline substances of road microwave radio using single constant-current source Body pipe, it is characterised in that：Including the changeable constant-current control module in two tunnels, polarity judge module, the changeable constant current control in two tunnels Molding block includes single constant current source unit, constant current value adjustment unit and switching switch；The polarity judge module is used to gather supply voltage, and is believed according to the size of supply voltage to switching switch output switching Number；The switching switch controls being turned on and off for two road microwave radio bipolar transistors according to switching signal；The constant current value Adjustment unit is used to gather outside constant-current control signal, and constant current value size is adjusted and to single perseverance according to outside constant-current control signal Flow source unit output；The single constant current source unit is used to receive the constant current value after regulation, drives the two bipolar crystalline substances of road microwave radio Body pipe works.
- 2. satellite receiver high-frequency head LNB biasing circuits as claimed in claim 1, it is characterised in that：The single constant current source unit Including first, second output end, switching switch includes two inputs, two output ends；The input of the polarity judge module End is connected with power supply, and the output end of polarity judge module is connected with one of input of switching switch；The two of switching switch Base stage of the individual output end respectively with two road microwave radio bipolar transistors is connected；Outside constant-current control signal is adjusted single by constant current value The input input of member, the output end of constant current value adjustment unit are connected with the input of single constant current source unit, single constant-current source First output end of unit is connected with the colelctor electrode of two road microwave radio bipolar transistors, the second output of single constant current source unit Another input with switching switch is held to be connected.
- 3. satellite receiver high-frequency head LNB biasing circuits as claimed in claim 2, it is characterised in that：The biasing circuit also includes 5V Reference voltage module, the input of the 5V reference voltage modules are connected with power supply, the output end conduct of 5V reference voltage modules Reference voltage output terminal；The 5V reference voltage modules are used to gather supply voltage, and export 5V reference voltages.
- 4. satellite receiver high-frequency head LNB biasing circuits as claimed in claim 2, it is characterised in that：The biasing circuit also includes 22KHz audio detection modules, the input of the 22KHz audio detections module are connected with power supply, 22KHz audio detection modules Output end is as control voltage output end；The 22KHz audio detections module is used to judge to whether there is 22KHz in supply voltage Audio signal and whether the audio frequency signal amplitude is between 100mV~300mV, if then exporting high level, otherwise exports low electricity It is flat.
- 5. satellite receiver high-frequency head LNB biasing circuits as claimed in claim 1, it is characterised in that：The constant current value adjustment unit The also external resistance of input, the size of the resistance is 17K Ω~50K Ω.
- 6. satellite receiver high-frequency head LNB biasing circuits as claimed in claim 1, it is characterised in that：The switching switch is following One of which in switch：Single-pole double-throw switch (SPDT), double-point double-throw switch.
- 7. satellite receiver high-frequency head LNB biasing circuits as claimed in claim 3, it is characterised in that：The 5V reference voltage modules For low pressure difference linear voltage regulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510167999.3A CN104767948B (en) | 2015-04-10 | 2015-04-10 | A kind of satellite receiver high-frequency head LNB biasing circuits |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510167999.3A CN104767948B (en) | 2015-04-10 | 2015-04-10 | A kind of satellite receiver high-frequency head LNB biasing circuits |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104767948A CN104767948A (en) | 2015-07-08 |
| CN104767948B true CN104767948B (en) | 2017-12-01 |
Family
ID=53649524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510167999.3A Active CN104767948B (en) | 2015-04-10 | 2015-04-10 | A kind of satellite receiver high-frequency head LNB biasing circuits |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104767948B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113541771B (en) * | 2021-07-15 | 2022-10-28 | 广西金网通电子科技有限公司 | Satellite down converter for receiving Beidou signal for households |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1643800A (en) * | 2002-04-03 | 2005-07-20 | 汤姆森许可公司 | Power supply for a satellite receiver |
| CN101366172A (en) * | 2005-11-01 | 2009-02-11 | 赛特克斯半导体公司 | Monolithic LNA support IC |
| CN201533241U (en) * | 2007-05-02 | 2010-07-21 | 赛特克斯半导体公司 | Voltage regulator, low noise module and satellite receiving system |
| CN101895698A (en) * | 2010-06-29 | 2010-11-24 | 苏州市华芯微电子有限公司 | Integrated circuit with functions of bias and polarization selection |
| CN102739172A (en) * | 2011-04-12 | 2012-10-17 | Nxp股份有限公司 | Differential output stage |
-
2015
- 2015-04-10 CN CN201510167999.3A patent/CN104767948B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1643800A (en) * | 2002-04-03 | 2005-07-20 | 汤姆森许可公司 | Power supply for a satellite receiver |
| CN101366172A (en) * | 2005-11-01 | 2009-02-11 | 赛特克斯半导体公司 | Monolithic LNA support IC |
| CN201533241U (en) * | 2007-05-02 | 2010-07-21 | 赛特克斯半导体公司 | Voltage regulator, low noise module and satellite receiving system |
| CN101895698A (en) * | 2010-06-29 | 2010-11-24 | 苏州市华芯微电子有限公司 | Integrated circuit with functions of bias and polarization selection |
| CN102739172A (en) * | 2011-04-12 | 2012-10-17 | Nxp股份有限公司 | Differential output stage |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104767948A (en) | 2015-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9124265B2 (en) | Method and apparatus for transistor switch isolation | |
| US7738841B2 (en) | Systems, methods and apparatuses for high power complementary metal oxide semiconductor (CMOS) antenna switches using body switching and external component in multi-stacking structure | |
| EP2387094A1 (en) | Switch circuit and method of switching radio frequency signals | |
| US8736383B2 (en) | Power amplifier circuit and control method | |
| US20110032021A1 (en) | T switch with high off state isolation | |
| CN106817096A (en) | Power amplifier module | |
| CN101888178B (en) | Charge pump circuit used for reducing current mismatch at extra-low voltage in phase-locked loop | |
| JPH09232875A (en) | High frequency amplifier | |
| CN104067517B (en) | The method and system of ultrasonic control is carried out using bidirectional transistor | |
| CN104517957B (en) | Static discharge (ESD) circuit | |
| WO2020237632A1 (en) | Driving circuit, digital logic circuit, and related apparatus | |
| CN101366172B (en) | Monolithic LNA support IC | |
| CN117296250A (en) | Bulk resistor bypass for RF FET switch stack | |
| WO2016018527A1 (en) | Limiting driver for switch-mode power amplifier | |
| CN107306118B (en) | Power amplifying module | |
| CN102403963A (en) | Power amplifier | |
| CN103457585B (en) | RF switch and RF switch system | |
| CN106911326A (en) | Radio frequency switch capable of reducing bias control signal | |
| CN204517944U (en) | A kind of satellite receiver high-frequency head LNB biasing circuit | |
| CN104767948B (en) | A kind of satellite receiver high-frequency head LNB biasing circuits | |
| US9887637B1 (en) | High speed programmable threshold gallium nitride power limiter | |
| CN108012386A (en) | Control circuit, chip, method and switching device | |
| CN106470026A (en) | A kind of radio-frequency switch circuit and radio frequency link | |
| CN104135238B (en) | Radio-frequency power amplifier and electronic system | |
| CN108075755A (en) | Power module and its control method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: No. 5, Xijin Road, Xinwu District, Wuxi City, Jiangsu Province, 214000 Patentee after: Wuxi Jingyuan Microelectronics Co.,Ltd. Address before: Room 209, building a, block 106-c, national high tech Industrial Development Zone, Wuxi City, Jiangsu Province, 214028 Patentee before: Wuxi Jingyuan Microelectronics Co.,Ltd. |