CN104767110A - Multi-wavelength diode pumped solid state frequency-mixing laser - Google Patents
Multi-wavelength diode pumped solid state frequency-mixing laser Download PDFInfo
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- CN104767110A CN104767110A CN201510195707.7A CN201510195707A CN104767110A CN 104767110 A CN104767110 A CN 104767110A CN 201510195707 A CN201510195707 A CN 201510195707A CN 104767110 A CN104767110 A CN 104767110A
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Abstract
A multi-wavelength diode pumped solid state frequency-mixing laser comprises a pump light source, condensing lenses, laser crystals, non-linear conversion crystals, filter lenses and a voltage control device. Electrochromism reflecting mirrors are arranged between the pump light source and the non-linear conversion crystals. The voltage control device controls the switching state of each electrochromism reflecting mirror. Each electrochromism reflecting mirror divides a light path of light entering the electrochromism reflecting mirror into two secondary light paths, namely a transmission secondary path and a reflecting secondary light path. The electrochromism reflecting mirrors can be arranged in the secondary light paths in am embedded mode. Pump light sequentially passes through the condensing lenses, the laser crystals and the non-linear conversion crystals in sequence when being transmitted along each secondary light path. Outgoing ends of the non-linear conversion crystals are all provided with the filter lenses, frequency-mixing light goes out through the filter lenses and laser output of the corresponding paths is formed. The multi-wavelength diode pumped solid state frequency-mixing laser reduces signal light needed by frequency mixing, can also omit a part of the laser crystals, is simpler and more compact in structure, and is tuned more conveniently, and the size of the laser is reduced conveniently.
Description
Technical field
The present invention relates to field of laser device technology, particularly all solid state mixing laser device of a kind of multi-wavelength, can select the laser exporting multiple wavelength.
Background technology
All solid state laser (Diode Pumped solid state Laser, DPL) be with semiconductor laser (Laser diode, LD) as the solid state laser of pumping source, relative to only requiring that operation material is the conventional solid laser of solid laser material, the working-laser material of DPL, the part such as driving source is formed by solid matter, it has concentrated the advantage of conventional solid laser and semiconductor laser, there is volume little, lightweight, efficiency is high, stable performance, good reliability, life-span is long, easy to operate, operate nimble (can realize the several working ways such as continuously/repetition rate/length/short pulse), easy intellectuality, the advantage such as pollution-free, become one of lasing light emitter of new generation of current most potentiality.After light mixing refers to that the monochromatic high light of two bundles or the above different frequency of two bundles incides nonlinear dielectric simultaneously, by the coupling of twice of medium or more high order nonlinear electrical polarization coefficient, produce optics and the phenomenon of frequency with optical difference frequency light wave, it is the non-linear conversion process of light, be usually used in laser technology field, such as mixing laser device.
Current all solid state mixing laser device, such as difference frequency laser, generate single wavelength laser and just need two-way light, namely pump light and flashlight produce difference frequency light, need one to produce the laser of pump light and the laser of another generation flashlight at least simultaneously, cause mixing laser device overall structure excessive, structure is also comparatively complicated; For multiple-wavelength laser, due to needs more multi-path light, it is more outstanding that complex structure causes volume to become large problem.
Summary of the invention
The object of the invention is to overcome above-mentioned the deficiencies in the prior art, provide multi-wavelength all solid state mixing laser device.
In order to solve the problems of the technologies described above, a kind of technical scheme of the present invention is:
The all solid state mixing laser device of a kind of multi-wavelength, comprises pump light source, collector lens, laser crystal, non-linear conversion crystal and filter lens; Described pump light source is semiconductor laser; Between pump light source and non-linear conversion crystal, Electrochromic reflector is set; The light path of incidence wherein light is divided into two strip light paths by each described Electrochromic reflector, is respectively the sub-light path of transmission and the sub-light path of reflection; Electrochromic reflector can nested setting in sub-light path, sub-light path is continued to be divided into two strip light paths; The corresponding road Laser output of every sub-light path of optical line terminal; Also comprise voltage-operated device, connect each Electrochromic reflector and switch electrochromism layer state by applying voltage control.Arranging element makes it all form resonant cavity in each sub-light path, the pump light of pump light source outgoing along arbitrary sub-optic path all successively through collector lens, laser crystal and non-linear conversion crystal, what wherein laser crystal sent be excited light and enter non-linear conversion crystal through the coupling pump light of laser crystal; The non-linear conversion crystal exit end of each sub-light path all arranges filter lens, and the outgoing of mixing light transmission filter lens, forms the Laser output on this road; The end face of described laser crystal pump light incidence is covered with high thoroughly to incident light, anti-to the light height that is excited film, the other end adjacent with non-linear conversion crystal is covered with the high anti-film of the mixing light of outgoing, described filter lens is coated with high anti-, saturating to the mixing light height film of the light that is excited, can for forming resonance and the outgoing of mixing light.
Preferably, before described non-linear conversion crystal, light combination mirror is set, introduces flashlight by described light combination mirror.
Preferably, described conductor laser is single mode semiconductor laser, multimode semiconductor laser or mode locking semiconductor laser; Outgoing continuous laser or pulse laser.
Preferably, described laser crystal is not limited to Nd:YAG (neodymium-doped yttrium-aluminum garnet), Nd:YVO
4(Nd-doped yttrium vanadate), Nd:SVAP (neodymium-doped fluorine vanadic acid button), Nd:YLF (neodymium-doped lithium fluoride yttrium), Nd:YAP (neodymium-doped yttrium aluminate) or other any laser crystal, can unrestricted choice is different as required material when using multiple laser crystal.
Preferably, described non-linear conversion crystal is not limited to PPLN (Periodically Poled LithiumNiobate, PPLN, periodic polarized lithium niobate) crystal, LBO (LiB
3o
5, three lithium borates) and crystal and BBO (β-BaB
2o
4, barium metaborate) and crystal, select nonlinear crystal as required.
Technical solution of the present invention adopts low divergence semiconductor laser as pumping source, excitation laser crystal produces the light that is excited of another one wave band, laser crystal also not exclusively absorbs pump light, the pump light be not completely absorbed is coupled in the nonlinear optical crystal of one-period polarization together with the light that is excited, and is converted into required frequency laser exports by nonlinear effect; Adopt the Electrochromic reflector that Transflective is controlled, pump light or the light that is excited are imported different light paths, then each road optical coupling is entered nonlinear optical crystal, realize multichannel not wavelength laser selection output.This technical scheme eliminates the extra flashlight needed for mixing, also can save fraction of laser light crystal, makes structure more simply compact, conveniently reduces laser volume, and be more convenient to tuning.
Accompanying drawing explanation
Fig. 1 is the first technical scheme laser structure schematic diagram of embodiment 1;
Fig. 2 is embodiment 2 the second technical scheme laser structure schematic diagram.
Wherein:
1. pump light source; 2-1,2-2,2-3. collector lens; 3-1,3-2,3-3. laser crystal; 4-1,4-2,4-2 ', 4-3. non-linear conversion crystal; 5-1,5-2,5-2 ', 5-3. filter lens; 6-1,6-2. Electrochromic reflector; 7. completely reflecting mirror; 8. light combination mirror; 9. flashlight.
Embodiment
Below in conjunction with accompanying drawing, by embodiment, the present invention will be further described, to understand the present invention better.
Embodiment 1
The basic block diagram of the present embodiment as shown in Figure 1, pump light source 1 is the semiconductor laser of 808nm, an Electrochromic reflector 6-1 (45° angle placement) is placed with in its utilizing emitted light front end, electrochromic layer wherein can change according to the difference of the on-load voltage of voltage-operated device (not shown in FIG.) between substantially transparent state and fundamental reflection state, when electrochromic layer is substantially transparent state, pump light can be substantially lossless by Electrochromic reflector 6-1, along the sub-optic path of transmission, then laser crystal 3-1 (Nd:YAG crystal) is focused on through a collector lens 2-1, laser crystal 3-1 absorbs the laser of 808nm and excites the laser of 1064nm, the laser of 1064nm forms the laser of 532nm again by the non-linear conversion crystal 4-1 (lbo crystal) of frequency multiplication.
Wherein laser crystal 3-1 is coated with 1064nm high-reflecting film and 808nm high transmittance film near the end face of 808nm pump light, is coated with 532nm high-reflecting film at the end face away from 808nm pump light, and filter lens 5-1 has 1064nm high-reflecting film and 532nm high transmittance film.This road light is the laser of outgoing 532nm after optical lens 5-1 after filtration.
When Electrochromic reflector 6-1 is fundamental reflection state, pump light is along the sub-optic path of reflection, be reflected on Electrochromic reflector 6-2, adjustment voltage makes Electrochromic reflector 6-2 be in fundamental reflection state, pump light enters the sub-light path of reflection of next stage, be reflected into collector lens 4-2, then light is focused onto laser crystal 3-2 (Nd:YLF crystal), the optical excitation of laser crystal 3-2 absorptive pumping goes out 1053nm laser, and then forms the laser of 526.5nm by the non-linear conversion crystal 4-2 (lbo crystal) of frequency multiplication.This road light is the laser of outgoing 526.5nm after optical lens 5-2 after filtration.
Wherein laser crystal 3-2 is coated with 1053nm high-reflecting film and 808nm high transmittance film near the end face of 808nm pump light, is coated with 526.5nm high-reflecting film at the end face away from 808nm pump light, and filter lens 5-2 is coated with 1053nm high-reflecting film and 526.5nm high transmittance film.
Adjustment Electrochromic reflector 6-1 is fundamental reflection state, adjust Electrochromic reflector 6-2 simultaneously and be in basic transmission state, pump light is first along the sub-light path of reflection of Electrochromic reflector 6-1, again along the sub-optic path of transmission of Electrochromic reflector 6-2, pump light incides on completely reflecting mirror 7, reflex to collector lens 2-3 again and then incide laser crystal 3-3 (Nd:KGW crystal), inspire the laser of 1068nm and then formed the laser of 534nm by the non-linear conversion crystal 4-3 (lbo crystal) of frequency multiplication.
Wherein laser crystal 3-3 is coated with 1068nm high-reflecting film and 808nm high transmittance film near the end face of 808nm pump light, and be coated with 534nm high-reflecting film at the end face away from 808nm pump light, filter lens 5-3 is coated with 1068nm high-reflecting film, 534nm high transmittance film.This road light is the laser of outgoing 534nm after optical lens 5-3 after filtration.
Embodiment 2
As shown in Figure 2, pump light still uses the pump light in embodiment 1, by focusing in laser crystal 3-1 (Nd:YAG crystal) after collector lens 2-1, excite the laser of 1064nm, adjustment voltage makes Electrochromic reflector 6-1 be in substantially transparent state, and 1064nm laser produces 532nm laser through the non-linear conversion crystal 4-1 (lbo crystal) of frequency multiplication.
Wherein laser crystal 3-1 is coated with 1064nm high-reflecting film and 808nm high transmittance film near the end face of 808nm pump light, and be coated with 532nm high-reflecting film at the end face away from 808nm pump light, filter lens 5-1 is coated with 1064nm high-reflecting film, 532nm high transmittance film.The laser of this road light outgoing 532nm.
Adjustment voltage makes Electrochromic reflector 6-1 be in fundamental reflection state, and Electrochromic reflector 6-2 is in fundamental reflection state, produces the laser of 532nm after the non-linear conversion crystal 4-2 (lbo crystal) of frequency multiplication.Filter lens 5-2 is coated with 1064nm high-reflecting film and 532nm high transmittance film, the laser of this road light first outgoing 532nm; The 532nm laser of outgoing again through the laser of non-linear conversion crystal 4-2 ' (bbo crystal) the outgoing 266nm of frequency multiplication, filter lens 5-2 ' only to 266nm wave band through, other light is reflected, so this road light outgoing 266nm Ultra-Violet Laser.
Adjustment voltage makes Electrochromic reflector 6-1 be in fundamental reflection state, Electrochromic reflector 6-2 is made to be in substantially transparent state, pump light incides light combination mirror 8, light combination mirror 8 pairs of 1064nm light are high anti-, thoroughly high to 800nm light, flashlight 9 laser of 800nm is incident from the other one side of light combination mirror 8, the laser of 800nm and 1064nm is combined into and a branch ofly incides in non-linear conversion crystal 4-3 (PPLN crystal), two-beam difference frequency and produce the laser of 3.2 μm, wherein filter lens 5-3 is to 3.2 μm of laser light, to 1064nm and 800nm laser reflection, this road light only produces 3.2 μm of laser.
From embodiment, select the pump light source, laser crystal and the non-linear conversion crystal that are suitable for according to actual conditions, and build corresponding light path, the defeated of various multi-wavelength mixing laser can be realized.Mixing schemes can unrestricted choice, such as frequency tripling, quadruple and frequency, difference frequency etc., and optics cavity is also not limited to the straight die cavity in above-described embodiment, also can be V word chamber, L-type chamber or other any type of laser cavities.The parts of its optics cavity are also not limited to described in embodiment, and the situation according to reality can increase corresponding parts.
Should be understood that above-described embodiment only for technical conceive of the present invention and feature are described, its object is to understand content of the present invention for those skilled in the art and implement according to this, not embodiment is exhaustive, can not limit the scope of the invention with this.All technical schemes according to the present invention's invention are modified or equivalent replacement, and do not depart from aim and the scope of technical solution of the present invention, and it all should be encompassed in the middle of right of the present invention.
Claims (5)
1. all solid state mixing laser device of multi-wavelength, comprises pump light source, collector lens, laser crystal, non-linear conversion crystal and filter lens; Described pump light source is semiconductor laser; It is characterized in that:
Between pump light source and non-linear conversion crystal, Electrochromic reflector is set; The light path of incidence wherein light is divided into two strip light paths by each described Electrochromic reflector, is respectively the sub-light path of transmission and the sub-light path of reflection; Electrochromic reflector can nested setting in sub-light path, sub-light path is continued to be divided into two strip light paths; The corresponding road Laser output of every sub-light path of optical line terminal; Also comprise the voltage-operated device connecting each Electrochromic reflector;
Arranging element makes it all form resonant cavity in each sub-light path, the pump light of pump light source outgoing along arbitrary sub-optic path all successively through collector lens, laser crystal and non-linear conversion crystal, what wherein laser crystal sent be excited light and enter non-linear conversion crystal through the coupling pump light of laser crystal;
The non-linear conversion crystal exit end of each sub-light path all arranges filter lens, and the outgoing of mixing light transmission filter lens, forms the Laser output on this road;
The end face of described laser crystal pump light incidence is covered with high thoroughly to incident light, anti-to the light height that is excited film, and the other end adjacent with non-linear conversion crystal is covered with the high anti-film of described mixing light; Described filter lens is coated with high anti-, saturating to the mixing light height film of the light that is excited.
2. all solid state mixing laser device of multi-wavelength according to claim 1, is characterized in that: arrange light combination mirror before described non-linear conversion crystal, introduces flashlight by described light combination mirror.
3. all solid state mixing laser device of multi-wavelength according to claim 1 and 2, is characterized in that: described conductor laser is single mode semiconductor laser, multimode semiconductor laser or mode locking semiconductor laser; Outgoing continuous laser or pulse laser.
4. all solid state mixing laser device of multi-wavelength according to claim 1 and 2, is characterized in that: each described laser crystal is respectively Nd:YAG, Nd:YVO
4, Nd:SVAP, Nd:YLF or Nd:YAP crystal.
5. all solid state mixing laser device of multi-wavelength according to claim 1 and 2, is characterized in that: each described non-linear conversion crystal is respectively LBO, BBO or PPLN crystal.
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| CN201510195707.7A CN104767110A (en) | 2015-04-22 | 2015-04-22 | Multi-wavelength diode pumped solid state frequency-mixing laser |
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| CN201510195707.7A CN104767110A (en) | 2015-04-22 | 2015-04-22 | Multi-wavelength diode pumped solid state frequency-mixing laser |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797740A (en) * | 2019-09-27 | 2020-02-14 | 中国科学院电子学研究所 | Intermediate infrared laser based on difference frequency of alkali metal laser |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2351897Y (en) * | 1997-07-04 | 1999-12-01 | 中国科学院福建物质结构研究所 | Laser diode pumping passive setting Q whole-solidification internal cavity frequency multiplier mixer laser |
| US6208673B1 (en) * | 1999-02-23 | 2001-03-27 | Aculight Corporation | Multifunction solid state laser system |
| CN104518395A (en) * | 2013-09-30 | 2015-04-15 | 无锡津天阳激光电子有限公司 | Double-end-output 532nm and 660nm double-wavelength optical fiber laser for Internet of Things |
| CN204651675U (en) * | 2015-04-22 | 2015-09-16 | 南京中科神光科技有限公司 | The all solid state mixing laser device of a kind of multi-wavelength |
-
2015
- 2015-04-22 CN CN201510195707.7A patent/CN104767110A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2351897Y (en) * | 1997-07-04 | 1999-12-01 | 中国科学院福建物质结构研究所 | Laser diode pumping passive setting Q whole-solidification internal cavity frequency multiplier mixer laser |
| US6208673B1 (en) * | 1999-02-23 | 2001-03-27 | Aculight Corporation | Multifunction solid state laser system |
| CN104518395A (en) * | 2013-09-30 | 2015-04-15 | 无锡津天阳激光电子有限公司 | Double-end-output 532nm and 660nm double-wavelength optical fiber laser for Internet of Things |
| CN204651675U (en) * | 2015-04-22 | 2015-09-16 | 南京中科神光科技有限公司 | The all solid state mixing laser device of a kind of multi-wavelength |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110797740A (en) * | 2019-09-27 | 2020-02-14 | 中国科学院电子学研究所 | Intermediate infrared laser based on difference frequency of alkali metal laser |
| CN110797740B (en) * | 2019-09-27 | 2021-04-23 | 中国科学院电子学研究所 | Intermediate infrared laser based on difference frequency of alkali metal laser |
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Application publication date: 20150708 |