CN104766774A - Cathode emitter - Google Patents
Cathode emitter Download PDFInfo
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- CN104766774A CN104766774A CN201510179910.5A CN201510179910A CN104766774A CN 104766774 A CN104766774 A CN 104766774A CN 201510179910 A CN201510179910 A CN 201510179910A CN 104766774 A CN104766774 A CN 104766774A
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- Prior art keywords
- emitter
- matrix
- hole
- cathode
- cell size
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Abstract
The invention discloses a cathode emitter comprising an emitting matrix and impregnant. The emitting matrix is provided with holes, and the impregnant is arranged in the holes of the emitting matrix. The holes of the emitting matrix have different apertures. The apertures of the holes in the work face of the emitting matrix are smaller than those of the holes in other parts of the emitting matrix. Under the condition that an emitting current is 4.5-5 A and the number of times of thermal cycle impact reaches 10000, the normal service life of the cathode emitter is longer than 10000 hours.
Description
Technical field
The present invention relates to a kind of negative electrode, be specifically related to a kind of hot cathode.
Background technology
Negative electrode is used widely in many electronic devices, is the electron emission source in electronic device, is the important component part of electronic device.In some electronic devices, such as Hall thruster operationally, before this emitter was slowly heated, when emitter temperature reaches emission temperature, emitter produces enough hot electrons, hot electron is used for ionizing the neutral gas entered in cathode tube, ignition voltage is added to control pole, makes ion to emitter motion bombardment emitter, maintain emitter temperature, then powered-down, enter self-maintained discharge state, now, cathode emitter is in hot operation state, cause negative electrode emitting performance after operate longer to reduce, affect emission lifetime; And as the electronic device that some needs work long hours, such as electric propulsion hall thruster, requires the life-span at least to reach more than 8000 hours, and current existing emitter can not meet long-life requirement.
Summary of the invention
In view of the foregoing, for solving the problem, the invention provides a kind of cathode emitter, described cathode emitter comprises launches matrix and macerate, the porose gap of described transmitting matrix, described macerate is placed in the hole of emitter, and the hole of described transmitting matrix has different cell sizes, and the cell size of the working face hole of described emitter matrix is less than the cell size of other part hole launching matrix.
Described cathode emitter is middle is hollow tubular structure, is followed successively by emitter internal layer and emitter skin from inside to outside, and the cell size of described emitter internal layer hole is less than the cell size of the outer hole of emitter.
Described cathode emitter is made up of tungsten material, and described macerate is aluminate.
After adopting technical scheme of the present invention, prior art is compared, and possesses following advantage and beneficial effect:
At emission current (4.5 ~ 5) A, under accumulative 10000 conditions of thermal cycle impact, cathode emitter normal working life of the present invention reaches more than 10000 hours.
accompanying drawing illustrates to be separated
The structural representation of Fig. 1 embodiment of the present invention;
The structure enlarged drawing in kind of Fig. 2 embodiment of the present invention.
In figure, 1-emitter, 2-emitter is outer, and 3-emitter internal layer, 4-launches matrix, 5-macerate.
Embodiment
Below in conjunction with drawings and Examples, the invention will be further described.
The present embodiment provides a kind of cathode emitter, its structure as shown in Figure 1, schematic enlarged-scale view as shown in Figure 2, cathode emitter described in the present embodiment comprises the transmitting matrix and aluminate macerate that tungsten material makes, the porose gap of described transmitting matrix, described macerate aluminate is placed in the hole of emitter, the hole of described transmitting matrix has different cell sizes, the cell size of the working face hole of described emitter matrix is less than the cell size of other part hole launching matrix, in the present embodiment, described cathode emitter is middle is hollow tubular structure, be followed successively by emitter internal layer and emitter skin from inside to outside, the working face of described cathode emitter is the surface of internal layer, the cell size of described emitter internal layer hole is less than the cell size of the outer hole of emitter.
Claims (3)
1. a cathode emitter, it is characterized in that, described cathode emitter comprises launches matrix and macerate, the porose gap of described transmitting matrix, described macerate is placed in the hole of emitter, the hole of described transmitting matrix has different cell sizes, and the cell size of the working face hole of described emitter matrix is less than the cell size of other part hole launching matrix.
2. a kind of cathode emitter as claimed in claim 1, it is characterized in that, described cathode emitter is middle is hollow tubular structure, is followed successively by emitter internal layer and emitter skin from inside to outside, and the cell size of described emitter internal layer hole is less than the cell size of the outer hole of emitter.
3. a kind of cathode emitter as claimed in claim 1 or 2, is characterized in that, described emitter matrix is made up of tungsten material, and described macerate is aluminate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510179910.5A CN104766774A (en) | 2015-04-16 | 2015-04-16 | Cathode emitter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510179910.5A CN104766774A (en) | 2015-04-16 | 2015-04-16 | Cathode emitter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104766774A true CN104766774A (en) | 2015-07-08 |
Family
ID=53648540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510179910.5A Pending CN104766774A (en) | 2015-04-16 | 2015-04-16 | Cathode emitter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104766774A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1034823A (en) * | 1987-12-17 | 1989-08-16 | 三菱电机株式会社 | Cathode for electron tube |
| US4980603A (en) * | 1987-06-12 | 1990-12-25 | Mitsubishi Kinzoku Kabushiki Kaisha | Cathode for an electron tube |
| JPH06103885A (en) * | 1992-09-18 | 1994-04-15 | Toshiba Corp | Porous sintered base, manufacture thereof and method for evaluating porosity of porous material |
| JPH06111711A (en) * | 1992-09-30 | 1994-04-22 | Sony Corp | Impregnation type cathode |
| CN1205538A (en) * | 1997-07-09 | 1999-01-20 | 松下电子工业株式会社 | Dipped cathode and its mfg. method |
| CN101728181A (en) * | 2009-12-06 | 2010-06-09 | 甘肃虹光电子有限责任公司 | Manufacture method of annular barium-tungsten cathode emitter |
| CN103050354A (en) * | 2011-10-17 | 2013-04-17 | 中国科学院电子学研究所 | Storage film-coating dipped barium-tungsten cathode and preparation method |
| CN204480992U (en) * | 2015-04-16 | 2015-07-15 | 成都国光电气股份有限公司 | A kind of cathode emitter |
-
2015
- 2015-04-16 CN CN201510179910.5A patent/CN104766774A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4980603A (en) * | 1987-06-12 | 1990-12-25 | Mitsubishi Kinzoku Kabushiki Kaisha | Cathode for an electron tube |
| CN1034823A (en) * | 1987-12-17 | 1989-08-16 | 三菱电机株式会社 | Cathode for electron tube |
| JPH06103885A (en) * | 1992-09-18 | 1994-04-15 | Toshiba Corp | Porous sintered base, manufacture thereof and method for evaluating porosity of porous material |
| JPH06111711A (en) * | 1992-09-30 | 1994-04-22 | Sony Corp | Impregnation type cathode |
| CN1205538A (en) * | 1997-07-09 | 1999-01-20 | 松下电子工业株式会社 | Dipped cathode and its mfg. method |
| CN101728181A (en) * | 2009-12-06 | 2010-06-09 | 甘肃虹光电子有限责任公司 | Manufacture method of annular barium-tungsten cathode emitter |
| CN103050354A (en) * | 2011-10-17 | 2013-04-17 | 中国科学院电子学研究所 | Storage film-coating dipped barium-tungsten cathode and preparation method |
| CN204480992U (en) * | 2015-04-16 | 2015-07-15 | 成都国光电气股份有限公司 | A kind of cathode emitter |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20150708 |