CN104766693B - The method of chip electronic component and manufacture chip electronic component - Google Patents
The method of chip electronic component and manufacture chip electronic component Download PDFInfo
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- CN104766693B CN104766693B CN201410136448.6A CN201410136448A CN104766693B CN 104766693 B CN104766693 B CN 104766693B CN 201410136448 A CN201410136448 A CN 201410136448A CN 104766693 B CN104766693 B CN 104766693B
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F17/0013—Printed inductances with stacked layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/26—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers
- H01F10/28—Thin magnetic films, e.g. of one-domain structure characterised by the substrate or intermediate layers characterised by the composition of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/29—Terminals; Tapping arrangements for signal inductances
- H01F27/292—Surface mounted devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
- H01F27/346—Preventing or reducing leakage fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Coils Or Transformers For Communication (AREA)
Abstract
A kind of chip electronic component and a kind of method of manufacture chip electronic component are disclosed, the chip electronic component includes：Magnetic body, including dielectric base；Inside coil part, is arranged at least one surface of dielectric base；And outer electrode, it is arranged on an end surfaces of magnetic body, and Inside coil part is connected to, wherein, the thickness of dielectric base is defined as t1, and the thickness of Inside coil part is defined as t2, and t2/t1 is 1.0 to 1.8.The variation characteristic for the inductance l values that the chip electronic component can prevent from that magnetization occurs near coil to improve the application with electric current by stopping flowing of the magnetic flux near coil, and relatively high maximum induction value can be realized by the volume for the magnetic material for fully ensuring to fill.
Description
This application claims the 10-2014-0000139 South Korea submitted on January 2nd, 2014 in Korean Intellectual Property Office
The rights and interests of patent application, disclosure of which is contained in this by quoting.
Technical field
This disclosure relates to a kind of chip electronic component and a kind of method of manufacture chip electronic component.
Background technology
Inductor（That is, chip electronic component）It is to construct electronic circuit together with resistor and capacitor to remove noise
Representational passive element.Inductor is combined to construct the resonance in special frequency band amplified signal using electromagnetic performance with capacitor
Circuit or filter circuit etc..
Recently, due to the information technology of various communicators and display device etc.（IT）The miniaturization of device and slim
Change is accelerated, so to making the various of inductor, capacitor and resistor etc. using being used in these IT devices
The research of the technology of miniaturization of components and slimming is persistently carried out.Inductor also by with small size and high density simultaneously
And can automatically be carried out the chip of surface installation and quickly substitute, and developed such a film-type inductor,
That is, the mixture formation of Magnaglo and resin is in coil pattern in film-type inductor, and coil pattern passes through plating shape
Into in the upper and lower surface in film-insulated substrate.
Meanwhile, according to the miniaturization to electronic installation and the demand of performance improvement, add power consumption.According to power consumption
Increase, has added the power management integrated circuits used in the power circuit of electronic installation（PMIC）Or direct current（DC）-
The switching frequency and output current of DC converters.Therefore, added for making PMIC or dc-dc output voltage
The use of stable power inductor.In this power inductor, it is desirable to the application of electric current, the rate of change of inductance l values
It is small.
Relevant technical literature discloses thin-film chip inductor below, wherein, Inside coil pattern is formed by plating
In the upper and lower surface of dielectric base, but exist as being applied to for electric current improves the variation characteristic side of inductance l values
The problem of face is restricted.
The content of the invention
Exemplary embodiment in the disclosure can provide a kind of chip electronic component and its manufacture method, the chip
Electronic building brick can prevent online circle from nearby occurring magnetization to improve the inductance L with the application of electric current by stopping magnetic flux
The variation characteristic of value, and relatively high maximum induction value can be realized.
According to exemplary embodiment in the disclosure, a kind of chip electronic component can include：Magnetic body, including it is exhausted
Edge substrate；Inside coil part, is arranged at least one surface of dielectric base；And outer electrode, it is arranged on magnetic master
On one end surfaces of body, and Inside coil part is connected to, wherein, the thickness of dielectric base is defined as t1, Inside coil
Partial thickness is defined as t2, and t2/t1 is 1.0 to 1.8.
Cumulative volume based on magnetic body, the volume of magnetic material can be 80 volume % to 90 volume %.
Cumulative volume based on magnetic body, the volume of dielectric base can be 10 volume % to 20 volume %.
The thickness t1 of dielectric base can be 40 μm to 100 μm.
The thickness t2 of Inside coil part can be 60 μm to 180 μm.
Dielectric base can have the through hole formed in the core of dielectric base, and the through hole is filled with magnetic
Property material is to form core segment.
Dielectric base can be from including polypropylene glycol（PPG）Substrate, ferrite base and metal based soft magnetic substrate
Any one selected in group or more is planted.
Inside coil part can be formed on a surface of dielectric base and on another surface, and can pass through shape
It is electrically connected to each other into the penetrating electrode in dielectric base.
Chip electronic component can have 2.8A to 3.3A peak point current and the maximum induction value of 1.00 μ H ± 20%.
According to exemplary embodiment in the disclosure, a kind of chip electronic component can include：Magnetic body, including it is exhausted
Edge substrate；Inside coil part, is arranged at least one surface of dielectric base；And outer electrode, it is arranged on magnetic master
On one end surfaces of body, and Inside coil part is connected to, wherein, the thickness of dielectric base is defined as t1, Inside coil
Partial thickness is defined as t2, and t2/t1 is 1.0 to 1.8, and the cumulative volume based on magnetic body, the volume of magnetic material
For 80 volume % to 90 volume %.
The thickness t1 of dielectric base can be 40 μm to 100 μm.
The thickness t2 of Inside coil part can be 60 μm to 180 μm.
Dielectric base can have the through hole formed in the core of dielectric base, and the through hole is filled with magnetic
Property material is to form core segment.
Dielectric base can be selected from the group including PPG substrates, ferrite base and metal based soft magnetic substrate
Any one or more.
Inside coil part can be formed on a surface of dielectric base and on another surface, and can pass through shape
It is electrically connected to each other into the penetrating electrode in dielectric base.
Chip electronic component can have 2.8A to 3.3A peak point current and the maximum induction value of 1.00 μ H ± 20%.
According to exemplary embodiment in the disclosure, a kind of method of manufacture chip electronic component can include：Exhausted
Inside coil part is formed at least one surface of edge substrate, the dielectric base has wearing in center portion formed therein point
Open-work；It is formed on stacking magnetosphere on the upper and lower part of the dielectric base of Inside coil part forming magnetic master
Body, magnetic body is included by using core segment formed by same material through hole；And at least the one of magnetic body
Outer electrode is formed on individual end surfaces so that outer electrode is connected to Inside coil part, wherein, the thickness of dielectric base is limited
It is set to t1, the thickness of Inside coil part is defined as t2, and t2/t1 is 1.0 to 1.8, total material based on magnetic body, magnetic
The volume of material is 80 volume % to 90 volume %.
Brief description of the drawings
According to described in detail below, above and other aspect, feature and the further advantage of the disclosure carried out with reference to accompanying drawing
It will be more clearly understood, in the accompanying drawings：
Fig. 1 is that the chip electronic component including Inside coil part for showing exemplary embodiment according to the disclosure shows
Meaning property perspective view；
Fig. 2 is the sectional view along Fig. 1 I-I' lines interception；
Fig. 3 is to show the direct current with the thickness of Inside coil part and the ratio between the thickness of dielectric base（DC）Bias characteristic
Curve map；
Fig. 4 be show with Inside coil part thickness and dielectric base the ratio between thickness peak current value and magnetic
The curve map of correlation between the volume of material；And
Fig. 5 is the flow chart for the method for showing the manufacture chip electronic component according to the exemplary embodiment of the disclosure.
Embodiment
Describe the exemplary embodiment of the disclosure in detail now with reference to accompanying drawing.
However, the disclosure can be illustrated in many different forms, and it should not be construed as limited to this
In the specific embodiment that illustrates.And these embodiments are to provide so that the disclosure will be thorough and complete, and will be this
Scope of disclosure is fully conveyed to those skilled in the art.
In the accompanying drawings, for the sake of clarity, the shape and size of element are may be exaggerated, and identical reference will
All the time it is used to indicate same or analogous element.
Chip electronic component
Hereinafter, by chip electronic component of the description according to the exemplary embodiment of the disclosure, for example, film-type inductance
Device, but disclosure not limited to this.
Fig. 1 is that the chip electronic component including Inside coil part for showing exemplary embodiment according to the disclosure shows
Meaning property perspective view；Fig. 2 is the sectional view along Fig. 1 I-I' lines interception；
Referring to Figures 1 and 2, there is provided use the example as chip electronic component in the power line of power circuit
Film-type inductor 100.It is chip magnetic bead that chip electronic component, which can be applied suitably,（chip bead）With chip wave filter etc.
And chip inducer.
Film-type inductor 100 can include magnetic body 50, dielectric base 20, Inside coil part 40 and outer electrode
80。
Magnetic body 50 can form the outward appearance of film-type inductor 100, and can be by showing appointing for magnetic properties
Meaning material is formed.For example, magnetic body 50 can be formed by filling ferrite or Metal Substrate soft magnetic material.
Ferrite can be the open ferrite disclosed, such as, Mn-Zn based ferrites, Ni-Zn based ferrites, Ni-Zn-
Cu based ferrites, Mn-Mg based ferrites, Ba based ferrites or Li based ferrites etc..
Metal Substrate soft magnetic material can be comprising the one kind or many selected from the group being made up of Fe, Si, Cr, Al and Ni
The alloy planted.For example, Metal Substrate soft magnetic material can include Fe-Si-B-Cr base amorphous（It is amorphous）Metallic particles, but not
It is limited to this.
Metal Substrate soft magnetic material can have 0.1 μm to 20 μm of particle diameter, and polymerization can be dispersed at it
In the polymer that epoxy resin or polyimides etc. are comprised in the state of in thing.
Magnetic body 50 can have hexahedral shape.Hexahedral direction will be defined that the disclosure is explicitly described
Exemplary embodiment.L, W and the T shown in Fig. 1 refers to length direction, width and thickness direction respectively.Magnetic body 50 can
With with rectangular shape.
The dielectric base 20 formed in magnetic body 50 can be such as polypropylene glycol（PPG）Substrate, ferrite base,
Metal based soft magnetic substrate etc..
Dielectric base 20 can have the inner wire being respectively formed on the surface and another surface of dielectric base 20
Part 41 and 42 is enclosed, Inside coil part 41 and 42 has the pattern of coil shape respectively.
Inside coil part 41 and 42 can include, with the coil pattern of spiral-shaped formation, being formed in dielectric base respectively
Inside coil part 41 and 42 on 20 surface and another surface can be by forming running through in dielectric base 20
Electrode 45 is electrically connected to each other.
Inside coil part 40 and penetrating electrode 45 can be for example silver-colored by the metal with excellent electric conductivity（Ag）, palladium
（Pd）, aluminium（Al）, nickel（Ni）, titanium（Ti）, gold（Au）, copper（Cu）, platinum（Pt）, their alloy etc. formed.
Here, when the thickness of dielectric base 20 is defined as t1, the thickness of Inside coil part 41 or 42 is defined as t2
When, t2/t1 can be 1.0 to 1.8.
The thickness t1 of dielectric base 20 can be increased to cause t2/t1 as 1.0 to 1.8, so that dielectric base 20 is used as resistance
Keep off the clearance layer of magnetic flux flowing.It is thereby possible to reduce the change of the application inductance l values with electric current, so as to control
Capacity reduction under relatively large electric current.
In the case where t2/t1 is less than 1.0, the rate of descent increase of the volume of the magnetic material of magnetic body 50 is filled, and
And the length-width ratio of inner wire collar member 40（AR）Reduction, so that direct current can be increased（DC）Resistance and maximum induction value can be reduced.Separately
On the one hand, in the case where t2/t1 is more than 1.8, the thickness relative thin of dielectric base 20 so that dielectric base 20 may not fill
Ground is divided to be used as the clearance layer for stopping magnetic flux flowing, so as to accelerate the change of the inductance l values of the application with electric current.
For example, the thickness t1 of dielectric base 20 can be 40 μm to 100 μm, the thickness t2 of Inside coil part 41 and 42 can
To be 60 μm to 180 μm.
In addition, the cumulative volume based on magnetic body 50, the volume of dielectric base 20 can be 10 volume % to 20 volume %.
In the case where the volume of the dielectric base 20 of the cumulative volume based on magnetic body 50 is less than 10 volume %, insulate base
Bottom 20 may not be sufficiently as the clearance layer for stopping magnetic flux flowing, so as to accelerate the inductance of the application with electric current
Value L change.The cumulative volume based on magnetic body 50 dielectric base 20 volume more than 20 volume % in the case of, filling
The volume rate of descent of the magnetic material of magnetic body 50 can increase.
Meanwhile, based on the cumulative volume of magnetic body 50, the volume of magnetic material can be 80 volume % to 90 volume %.
When the cumulative volume based on magnetic body 50, when the volume of magnetic material is 80 volume % to 90 volume %, dielectric base
20 thickness can increase, to stop the flowing of magnetic flux, hence improve the variation characteristic of the inductance l values of application with electric current
And realize high maximum induction value.
Dielectric base 20 can have the through hole in center portion formed therein point, to increase the volume of magnetic material.Wear
Open-work can be filled with the magnetic material of ferrite, Metal Substrate soft magnetic material etc., to form core segment 55.
Inside coil part 40 can be coated with insulating barrier 30.
Insulating barrier 30 can pass through open the method such as method for printing screen, photoresist disclosed（PR）Exposure and
The formation such as developing method or spraying method.Inside coil part 40 can be coated with insulating barrier 30 so that Inside coil part 40
It is not directly contacted with the magnetic material for constituting magnetic body 50.
One end of the Inside coil part 41 formed on a surface of dielectric base 20 can be along magnetic master
The length direction of body 50 is exposed to an end surfaces of magnetic body 50, forms the inside on another surface of dielectric base 20
One end of coiler part 42 can be exposed to another end surfaces of magnetic body 50 along the length direction of magnetic body 50.
Outer electrode 80 can be respectively formed at two end tables of magnetic body 50 along the length direction of magnetic body 50
On face, to be connected to the Inside coil portion for two end surfaces that magnetic body 50 is exposed to along the length direction of magnetic body 50
Divide 40.Outer electrode 80 can extend to the top major surface and lower main table of magnetic body 50 along the thickness direction of magnetic body 50
Face and/or extend to two side surfaces of magnetic body 50 along the width of magnetic body 50.
Outer electrode 80 can be formed as including the metal with excellent electric conductivity, for example, nickel（Ni）, copper（Cu）, tin
（Sn）, silver（Ag）Or their alloy.
The chip electronic component of exemplary embodiment as described above according to the disclosure can have 2.80A to 3.3A's
Peak point current Isat and 1.00 μ H ± 20% maximum induction value.
Peak point current Isat refers to electricity when initial inductance value declines 30% when applying electric current to chip electronic component
Stream.
Fig. 3 is to show the DC bias characteristics with the thickness t2 of Inside coil part and the ratio between the thickness t1 of dielectric base
（With the variation characteristic of the inductance value of the application of electric current）Curve map.Fig. 4 is to show the thickness t2 with Inside coil part
The curve map of correlation between the ratio between the thickness t1 of dielectric base peak point current Isat values and the volume of magnetic material.
Reference picture 3, it may be determined that with compared with t2/t1 is in the case of 2.12, in the situation and t2/ that t2/t1 is 1.07
In the case that t1 is 1.78, with the increase of the electric current of application, the decline of inductance value is substantially small.
Reference picture 4, it will be understood that because the thickness t1 of dielectric base 20 increase causes t2/t1 to reduce, so that peak value is electric
Isat increases are flowed, but the volume of the magnetic material of filling magnetic body 50 reduces.
Therefore, in order to realize improve due to the thickness t1 of dielectric base 20 increase DC bias characteristics effect and by
The effect of relatively high maximum induction value is minimized and realizes in the volume rate of descent of the magnetic material of setting, in showing for the disclosure
In example property embodiment, t2/t1 can be 1.0 to 1.8, and based on the cumulative volume of magnetic body 50, the volume of magnetic material can
To be 80 volume % to 90 volume %.
Table 1 below illustrates the ratio between the thickness t2 with Inside coil part and the thickness t1 of dielectric base peak value electricity
Flow Isat values, the volume of magnetic material and maximum induction value.
The chip size of A cake core electronic building bricks（L×W×T）For 2.00 × 1.60 × 1.00 [mm], Type B chip electronic
The chip size of component（L×W×T）For 2.00 × 1.25 × 1.00 [mm].
[table 1]
As with seen in upper table 1, when t2/t1 is 1.0 to 1.8, and the cumulative volume based on magnetic body, magnetic material
Volume be 80 volume % to 90 volume % when, high peak current Isat can occur and high maximum induction value can be realized.
The method for manufacturing chip electronic component
Fig. 5 is the flow chart for the method for showing the manufacture chip electronic component according to the exemplary embodiment of the disclosure.
Reference picture 5, it is possible, firstly, to form Inside coil part 40 at least one surface of dielectric base 20.
Dielectric base 20 can be such as polypropylene glycol（PPG）Substrate, ferrite base or metal based soft magnetic substrate etc..
The method for forming Inside coil part 40 can be such as electro-plating method, but not limited to this.Inside coil part
40 can be formed as comprising the metal with excellent electric conductivity, for example, silver-colored（Ag）, palladium（Pd）, aluminium（Al）, nickel（Ni）, titanium
（Ti）, gold（Au）, copper（Cu）, platinum（Pt）, their alloy etc..
Hole can be formed in a part for dielectric base 20, and conductive material can be filled in hole and is run through with being formed
Another table of electrode 45, the Inside coil part 41 formed on a surface of dielectric base 20 and formation in dielectric base 20
Inside coil part 42 on face can be electrically connected to each other by penetrating electrode 45.
Here, when the thickness of dielectric base is t1 and the thickness of Inside coil part 41 or 42 is t2, t2/t1 can be with
It is 1.0 to 1.8.
The thickness t1 of dielectric base 20 can be increased so that t2/t1 is 1.0 to 1.8, so that dielectric base 20 is used as resistance
Keep off the clearance layer of magnetic flux flowing.It is thereby possible to reduce the change of the inductance l values with the application of electric current, so as to control
Capacity under high current reduces.
In the case where t2/t1 is less than 1.0, the volume rate of descent increase of the magnetic material of magnetic body 50 is filled, and
The length-width ratio of Inside coil part 40（AR）Reduce, so that direct current can be increased（DC）Resistance and maximum induction value can be reduced.Separately
On the one hand, in the case where t2/t1 is more than 1.8, the thickness relative thin of dielectric base 20 so that dielectric base 20 may not fill
Ground is divided to be used as the clearance layer for stopping magnetic flux flowing, so that the change with the inductance l values of the application of electric current can increase.
For example, the thickness t1 of dielectric base 20 can be 40 μm to 100 μm, the thickness t2 of Inside coil part 41 or 42 can
To be 60 μm to 180 μm.
Bore process, laser technology, blasting craft or punching work can be performed by the core to dielectric base 20
Skill etc. forms the through hole of break-through dielectric base 20 in the core of dielectric base 20.
The insulating barrier 30 of coating Inside coil part 40 can be internally formed on the surface of coiler part 40.It can pass through
Open the method such as method for printing screen, photoresist disclosed（PR）Exposed and developed method or spraying method etc. formed
Insulating barrier 30, but not limited to this.
Next, can be formed on stacking magnetic on the upper and lower part of the dielectric base 20 of Inside coil part 40
Property layer, so as to form magnetic body 50.
Magnetosphere can be stacked on two surfaces of dielectric base 20 respectively, and laminating method or static pressure can be passed through
Method compresses magnetosphere, so as to form magnetic body 50.Here, through hole can fill magnetic material to form core segment
55。
Based on as described above formed by magnetic body 50 cumulative volume, the volume of dielectric base 20 can be 10 volume %
To 20 volume %.
In the cumulative volume based on magnetic body 50, in the case that the volume of dielectric base 20 is less than 10 volume %, dielectric base
20 may not be sufficiently as the clearance layer for stopping magnetic flux flowing, so that the change of the inductance l values with the application of electric current
It can increase.In the cumulative volume based on magnetic body 50, in the case that the volume of dielectric base 20 is more than 20 volume %, magnetic is filled
The volume rate of descent of the magnetic material of main body 50 can increase.
Meanwhile, based on the cumulative volume of magnetic body 50, the volume of magnetic material can be 80 volume % to 90 volume %.
When the cumulative volume based on magnetic body 50, when the volume of magnetic material is 80 volume % to 90 volume %, dielectric base
20 thickness can increase to stop the flowing of magnetic flux, so that the change for improving the inductance l values of the application with electric current is special
Property, and realize relatively high maximum induction value.
Next, outer electrode 80 can be formed so that outer electrode 80 is connected at least one exposed to magnetic body 50
The Inside coil part 40 of individual end surfaces.
Outer electrode 80 can utilize the paste for including the metal with excellent electric conductivity（For example, including nickel（Ni）, copper
（Cu）, tin（Sn）, silver（Ag）Or the electroconductive paste of their alloy）Formed.According to the shape of outer electrode 80, dipping can be passed through
Method etc. and printing process form outer electrode 80.
It will omit and the feature identical feature of the chip electronic component of the above-mentioned example embodiment according to the disclosure
Description.
As described above, according to the exemplary embodiment of the disclosure, the magnetic flux flowed about in coil is blocked preventing
Magnetize near coil, so as to the variation characteristic for the inductance l values for improving the application with electric current, and it is fully true
The volume of the magnetic material set is protected, so as to realize high maximum induction value.
, will be obvious for those of ordinary skill in the art although having been shown above and describing exemplary embodiment
, in the case where not departing from the spirit and scope of the present disclosure being defined by the appended claims, can make modification and
Change.
Claims (9)
1. a kind of chip electronic component, the chip electronic component includes：
Magnetic body, including dielectric base；
Inside coil part, is arranged at least one surface of dielectric base；
Insulating barrier, coating Inside coil part；And
Outer electrode, is arranged on an end surfaces of magnetic body, and is connected to Inside coil part,
Wherein, the thickness of dielectric base is defined as t1, and the thickness of Inside coil part is defined as t2, t2/t1 be 1.0 to
1.8,
Wherein, the cumulative volume based on magnetic body, the volume of magnetic material is 80 volume % to 90 volume %.
2. chip electronic component according to claim 1, wherein, the cumulative volume based on magnetic body, the body of dielectric base
Product is 10 volume % to 20 volume %.
3. chip electronic component according to claim 1, wherein, the thickness t1 of dielectric base is 40 μm to 100 μm.
4. chip electronic component according to claim 1, wherein, the thickness t2 of Inside coil part is 60 μm to 180 μm.
5. chip electronic component according to claim 1, wherein, dielectric base has the central part formed in dielectric base
Through hole in point, the through hole fills magnetic material to form core segment.
6. chip electronic component according to claim 1, wherein, dielectric base is from including polypropylene glycol substrate, iron oxygen
Any one selected in the group of body substrate and metal based soft magnetic substrate or more is planted.
7. chip electronic component according to claim 1, wherein, Inside coil part forms a table in dielectric base
On on face and another surface, and it is electrically connected to each other by the penetrating electrode formed in dielectric base.
8. chip electronic component according to claim 1, wherein, chip electronic component has 2.8A to 3.3A peak value electricity
The maximum induction value of stream and 1.00 μ H ± 20%.
9. a kind of method for manufacturing chip electronic component, methods described includes：
Inside coil part is formed at least one surface of dielectric base, dielectric base, which has, to be formed in dielectric base
Through hole in center portion point；
It is formed on stacking magnetosphere on the upper and lower part of the dielectric base of Inside coil part to form magnetic body,
Magnetic body is included by using core segment formed by same material through hole；
Internally insulating layer coating is applied on coiler part；And
Outer electrode is formed at least one end surfaces of magnetic body so that outer electrode is connected to Inside coil part,
Wherein, the thickness of dielectric base is defined as t1, and the thickness of Inside coil part is defined as t2, t2/t1 be 1.0 to
1.8, total material based on magnetic body, the volume of magnetic material is 80 volume % to 90 volume %.
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| KR10-2014-0000139 | 2014-01-02 | ||
| KR1020140000139A KR101994729B1 (en) | 2014-01-02 | 2014-01-02 | Chip electronic component and manufacturing method thereof |
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| CN104766693A CN104766693A (en) | 2015-07-08 |
| CN104766693B true CN104766693B (en) | 2017-09-29 |
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Cited By (1)
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|---|---|---|---|---|
| CN109961940A (en) * | 2017-12-26 | 2019-07-02 | 三星电机株式会社 | Inductor and its manufacturing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101762027B1 (en) | 2015-11-20 | 2017-07-26 | 삼성전기주식회사 | Coil component and manufacturing method for the same |
| KR101973432B1 (en) * | 2016-10-28 | 2019-04-29 | 삼성전기주식회사 | Coil component |
| JP6400803B2 (en) | 2016-10-28 | 2018-10-03 | サムソン エレクトロ−メカニックス カンパニーリミテッド． | Coil parts |
| KR102632353B1 (en) * | 2016-12-08 | 2024-02-02 | 삼성전기주식회사 | Inductor |
| JP6729422B2 (en) * | 2017-01-27 | 2020-07-22 | 株式会社村田製作所 | Multilayer electronic components |
| EP3770930B1 (en) | 2019-07-25 | 2023-03-08 | Würth Elektronik Eisos Gmbh & CO. KG | Electronic component and method for manufacturing an electronic component |
| CN114071872A (en) * | 2021-11-18 | 2022-02-18 | Oppo广东移动通信有限公司 | Circuit board assembly, preparation method thereof and electronic equipment |
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| CN1574128A (en) * | 2003-05-22 | 2005-02-02 | Tdk株式会社 | Coil circuit board and surface mounted type coil element |
| CN103366919A (en) * | 2012-03-26 | 2013-10-23 | Tdk株式会社 | Planar coil element |
| CN103366920A (en) * | 2012-03-26 | 2013-10-23 | Tdk株式会社 | Planar coil element and method for producing the same |
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| JP2006287093A (en) * | 2005-04-04 | 2006-10-19 | Matsushita Electric Ind Co Ltd | Inductance component and its manufacturing method |
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|---|---|---|---|---|
| CN1574128A (en) * | 2003-05-22 | 2005-02-02 | Tdk株式会社 | Coil circuit board and surface mounted type coil element |
| CN103366919A (en) * | 2012-03-26 | 2013-10-23 | Tdk株式会社 | Planar coil element |
| CN103366920A (en) * | 2012-03-26 | 2013-10-23 | Tdk株式会社 | Planar coil element and method for producing the same |
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| CN109961940A (en) * | 2017-12-26 | 2019-07-02 | 三星电机株式会社 | Inductor and its manufacturing method |
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| CN104766693A (en) | 2015-07-08 |
| KR101994729B1 (en) | 2019-07-01 |
| KR20150080717A (en) | 2015-07-10 |
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