CN104760144B - A kind of sapphire camera lens substrate preparation method - Google Patents

A kind of sapphire camera lens substrate preparation method Download PDF

Info

Publication number
CN104760144B
CN104760144B CN201510147827.XA CN201510147827A CN104760144B CN 104760144 B CN104760144 B CN 104760144B CN 201510147827 A CN201510147827 A CN 201510147827A CN 104760144 B CN104760144 B CN 104760144B
Authority
CN
China
Prior art keywords
sapphire
cut
camera
substrate
crystal bar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201510147827.XA
Other languages
Chinese (zh)
Other versions
CN104760144A (en
Inventor
周群飞
饶桥兵
胡波卫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lens Technology Co Ltd
Original Assignee
Lens Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lens Technology Co Ltd filed Critical Lens Technology Co Ltd
Priority to CN201510147827.XA priority Critical patent/CN104760144B/en
Publication of CN104760144A publication Critical patent/CN104760144A/en
Application granted granted Critical
Publication of CN104760144B publication Critical patent/CN104760144B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/38Removing material by boring or cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

The invention provides a kind of sapphire camera lens substrate preparation method, including step:The geode that orientation is finished is processed into cylindrical crystal bar with diamond cylinder knife;Cylindrical crystal bar is cut into disk using diamond fretsaw;The wafer thickness is 0.3~0.7mm, 48~55mm of diameter;Sapphire wafers or cylinder are carried out appearance and size finishing by CNC boards;Sapphire wafers are cut conglobate camera substrate, a diameter of 5~7mm of camera substrate using the mode of laser cutting, thickness is 0.3~0.7mm;Or, sapphire cylinder is cut conglobate camera substrate using the mode of laser cutting.The application method improves operating efficiency and product yield.

Description

A kind of sapphire camera lens substrate preparation method
Technical field
The present invention relates to camera manufacture field, especially, is related to a kind of sapphire camera eyeglass preparation method.
Background technology
Camera includes visual window lens and for installing becket used by visual window lens etc..Current camera form mirror Piece typically adopts clear glass as raw material, or increases coating on its surface to increase its abrasion resistant effect.Therefore, existing face Plate generally existing hardness is low, not wear-resisting, easily scratches, and causes visual window lens to produce cut, has a strong impact on attractive in appearance, light transmittance and user Experience taking pictures, in terms of photography.
Sapphire material is high due to its hardness, and light transmittance is high, possesses good physics, chemistry and optical property, with should Good prospect for cam lens.But camera sizes of substrate is little, thickness of thin, rounded, traditional sapphire is sawed, line is cut Cut and be only used for processing square substrate.If desired, during circular substrate, big square piece, then sawing sheet Cheng little Fang can only be first cut into using band saw Piece, is then reprocessed into the method for sequin, wastes time and energy.Also, when less substrate is processed, clamping difficulty is big, Yi Fa The bad operations such as raw chipping, and working (machining) efficiency is relatively low, operation is long.
Content of the invention
Present invention aim at provide a kind of operation simple sapphire camera lens substrate preparation method, to solve existing processing Method efficiency is low, the technical problem that yield is low.
For achieving the above object, the invention provides a kind of sapphire camera lens substrate preparation method, including step:
A, draw rod:The geode that orientation is finished is processed into cylindrical crystal bar with diamond cylinder knife;The crystal orientation choosing of the crystal bar C is selected as to a diameter of 48~55mm of the crystal bar;
B, cut Circular wafer:Cylindrical crystal bar is cut into disk using diamond fretsaw;The wafer thickness be 0.3~ 0.7mm;
C, finishing:Sapphire wafers are carried out appearance and size finishing by CNC boards;
D, cut camera base material:Sapphire wafers are cut into circular platform type or cylinder using the mode of laser cutting Camera substrate, a diameter of 5~7mm of camera substrate, thickness are 0.3~0.7mm.
Preferably, described cut camera base material step after, on sapphire substrate, additional darkening ring is anti-tampering, on darkening ring Plating infrared filtering film.
Preferably, described cut camera base material step after, electroplate anti-oil film on sapphire substrate.
Preferably, the finishing step also includes:Circular wafer is surface-treated using grinding, polishing, to reach To specified roughness requirements.
Preferably, described cut in camera base material step, wafer laser cutting removal amount be 3~5um, cutting speed is 8 ~10mm/s.
Preferably, the cylinder knife internal diameter that draws used in rod step be 51~59mm, external diameter be 58~65mm, diamond sand Grain is 70~80um, and the speed of mainshaft is 280~300rpm.
The invention has the advantages that:
Geode is first cut into pole by the present invention, is retained certain surplus, then is cut into disk, then with laser cutting sawing sheet Big circular slice is cut directly into mode the circular camera substrate of required size, and efficiency high, yield are high, and utilization rate of raw materials is lifted More than 30%.
Plating infrared filtering film and anti-soil film also can preferably lift photographic effect, bring more preferable experience sense to user Receive, simultaneously because protecting to camera eyeglass without using other safeguard measures, not only tailored appearance is attractive in appearance, and save Because of the expense produced by all kinds of safeguard measures, with obvious economic worth.
In addition to objects, features and advantages described above, the present invention also has other objects, features and advantages. Below with reference to figure, the present invention is further detailed explanation.
Description of the drawings
The accompanying drawing for constituting the part of the application is used for providing a further understanding of the present invention, the schematic reality of the present invention Apply example and its illustrate, for explaining the present invention, not constituting inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 is that the preferred embodiment of the present invention draws rod step schematic diagram;
Fig. 2 is that the preferred embodiment of the present invention cuts Circular wafer step schematic diagram;
Fig. 3 is that the preferred embodiment of the present invention cuts camera base material step schematic diagram;
Wherein, 1, geode, 2, cylindrical crystal bar, 3, disk, 4, camera substrate, 5, anti-oil film, 6, infrared filtering film, 7, Darkening ring.
Specific embodiment
Embodiments of the invention are described in detail below in conjunction with accompanying drawing, but the present invention can be limited according to claim Multitude of different ways that is fixed and covering is implemented.
Referring to Fig. 1, Fig. 2 and Fig. 3, the present embodiment discloses a kind of camera visual window lens processing method, comprises the following steps that:
A, draw rod:The geode that orientation is finished is processed into cylindrical crystal bar with diamond cylinder knife;The crystal orientation choosing of the crystal bar C is selected as to C is easier to process to material is relative in follow-up polishing process, it is to avoid warpage is produced in product processing;Crystal bar A diameter of 48~55mm;
B, cut Circular wafer:Cylindrical crystal bar is cut into disk using diamond fretsaw;The wafer thickness be 0.3~ 0.7mm, 48~55mm of diameter;
C, finishing:Sapphire wafers are carried out appearance and size finishing by CNC boards;Using grinding, polishing to circle Shape chip is surface-treated, to reach specified roughness requirements;
D, cut camera base material:Sapphire wafers are cut into the camera base of truncated cone-shaped using the mode of laser cutting Piece, a diameter of 5~7mm of camera substrate, thickness are 0.3~0.7mm;Wafer laser cutting removal amount is 3~5um, cuts Speed is 8~10mm/s;
Or, also dependent on the camera for needing the mode using laser cutting that sapphire wafers are cut into cylindrical shape Substrate.
After camera base material step is cut, it is anti-tampering to add darkening ring on sapphire substrate, electricity on darkening ring Plating infrared filtering film, lifts photographic effect.
Anti- oil film is electroplated on sapphire substrate, and camera eyeglass is protected.
Present invention process operation simplifies, high working efficiency, and product yield is high.
1. operation simplifies
Traditional handicraft:Geode --->Disk or square wafer --->It is split into little square piece --->Process circular camera base Piece;
Existing process:Geode --->Disk --->Laser is cut directly into circular camera substrate;
2. yield contrast:Traditional handicraft processing uses skive, easily produces and collapses scarce (generally 1~2%), and swashs The mode of light cutting thoroughly can solve the problems, such as to collapse scarce without the need for crystal bar is clamped tension;
In addition to laser cutting is without the need for fixture clamping, easily scarce being mainly due to is collapsed in generation to be used herein as skive The machining accuracy of laser knife itself is high compared with skive, and the line footpath of laser is micron order, and boart boart material is at least all several More than ten microns.
3. utilization rate of raw materials lifts more than 30%, by taking the cylindrical camera substrate of cutting diameter 6mm as an example:
Traditional handicraft:Square piece of the required raw material size for length of side 7mm, utilization rate is 57.7%;
Existing process:Disk of the required raw material size for diameter 6.1mm, utilization rate is 96.8%.
Specific embodiment is shown in as follows:
Embodiment one,
1st, geode orientation is finished, and geode is processed into cylindrical crystal bar with diamond cylinder knife, and the crystal orientation of crystal bar is chosen as C To;
The cylinder knife internal diameter for using is 59mm, and external diameter is 65mm, and diamond sand grains is 80um, and the speed of mainshaft is 300rpm;
2nd, cylindrical crystal bar is cut into disk using diamond fretsaw, wafer thickness is 0.3mm, diameter 55mm;
3rd, Circular wafer is surface-treated using grinding, polishing, to reach the requirement of roughness Ra≤5nm;
4th, using laser cutting by sapphire wafers cutting camera substrate coning, camera substrate a diameter of 5mm, thickness are 0.3mm;Wafer laser cutting removal amount is 5um, and cutting speed is 10mm/s.
Utilization rate of raw materials 96.1%, the time-consuming 109.96s of one disk of cutting, cuts out camera substrate 70PCS, and nothing collapses Lack bad.
Embodiment two,
1st, geode orientation is finished, and geode is processed into cylindrical crystal bar with diamond cylinder knife, and the crystal orientation of crystal bar is chosen as C To;
The cylinder knife internal diameter for using is 51mm, and external diameter is 58mm, and diamond sand grains is 70um, and the speed of mainshaft is 280rpm;
2nd, cylindrical crystal bar is cut into disk using diamond fretsaw, wafer thickness is 0.7mm, diameter 48mm;
3rd, Circular wafer is surface-treated using grinding, polishing, to reach the requirement of roughness Ra≤5nm;
4th, using laser cutting by sapphire wafers cut into cylinder camera substrate, camera substrate a diameter of 7mm, thickness are 0.7mm;Wafer laser cutting removal amount is 3um, and cutting speed is 8mm/s.
Utilization rate of raw materials 97.2%, the time-consuming 65.98s of one disk of cutting, cuts out camera substrate 24PCS, and nothing collapses Lack bad.
Embodiment three,
1st, geode orientation is finished, and geode is processed into cylindrical crystal bar with diamond cylinder knife, and the crystal orientation of crystal bar is chosen as C To;
The cylinder knife internal diameter for using is 55mm, and external diameter is 62mm, and diamond sand grains is 75um, and the speed of mainshaft is 290rpm;
2nd, cylindrical crystal bar is cut into disk using diamond fretsaw, wafer thickness is 0.5mm, diameter 52mm;
3rd, Circular wafer is surface-treated using grinding, polishing, to reach the requirement of roughness Ra≤5nm;
The 4th, sapphire wafers cut into the camera substrate of truncated cone-shaped using laser cutting, camera substrate a diameter of 7mm, thickness are 0.5mm;Wafer laser cutting removal amount is 4um, and cutting speed is 9mm/s.
Utilization rate of raw materials 95.7%, the time-consuming 73.3s of one disk of cutting, cuts out camera substrate 30PCS, scarce without collapsing Bad.
The preferred embodiments of the present invention are the foregoing is only, the present invention is not limited to, for the skill of this area For art personnel, the present invention can have various modifications and variations.All within the spirit and principles in the present invention, made any repair Change, equivalent, improvement etc., should be included within the scope of the present invention.

Claims (4)

1. a kind of sapphire camera lens substrate preparation method, it is characterised in that including step:
A, draw rod:The geode that orientation is finished is processed into cylindrical crystal bar with diamond cylinder knife;The crystal orientation of the crystal bar is chosen as C To a diameter of 48~55mm of the crystal bar;The cylinder knife internal diameter that draws used in rod step be 51~59mm, external diameter be 58~ 65mm, diamond grit are 70~80um, and the speed of mainshaft is 280~300rpm;
B, cut Circular wafer:Cylindrical crystal bar is cut into disk using diamond fretsaw;The wafer thickness be 0.3~ 0.7mm;
C, finishing:Sapphire wafers are carried out appearance and size finishing by CNC boards;
D, cut camera base material:Sapphire wafers are cut into the shooting of circular platform type or cylinder using the mode of laser cutting Head substrate, a diameter of 5~7mm of camera substrate, thickness are 0.3~0.7mm, and wafer laser cutting removal amount is 3~5um, Cutting speed is 8~10mm/s.
2. a kind of sapphire camera lens substrate preparation method according to claim 1, it is characterised in that described cut camera base After material step, on sapphire substrate, additional darkening ring is anti-tampering, electroplates infrared filtering film on darkening ring.
3. a kind of sapphire camera lens substrate preparation method according to claim 1, it is characterised in that described cut camera base After material step, anti-oil film is electroplated on sapphire substrate.
4. a kind of sapphire camera lens substrate preparation method according to claim 1, it is characterised in that the finishing step Also include:Circular wafer is surface-treated using grinding, polishing, to reach specified roughness requirements.
CN201510147827.XA 2015-03-31 2015-03-31 A kind of sapphire camera lens substrate preparation method Active CN104760144B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510147827.XA CN104760144B (en) 2015-03-31 2015-03-31 A kind of sapphire camera lens substrate preparation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510147827.XA CN104760144B (en) 2015-03-31 2015-03-31 A kind of sapphire camera lens substrate preparation method

Publications (2)

Publication Number Publication Date
CN104760144A CN104760144A (en) 2015-07-08
CN104760144B true CN104760144B (en) 2017-03-15

Family

ID=53642403

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510147827.XA Active CN104760144B (en) 2015-03-31 2015-03-31 A kind of sapphire camera lens substrate preparation method

Country Status (1)

Country Link
CN (1) CN104760144B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110126106B (en) * 2019-06-17 2021-09-24 浙江晶特光学科技有限公司 Wafer processing method
CN114227173B (en) * 2021-12-30 2023-06-27 中航工业南京伺服控制系统有限公司 Technological method for improving processing efficiency of jet flow sheet
CN115415896A (en) * 2022-08-19 2022-12-02 潘芳琳 Wafer production process

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004188475A (en) * 2002-12-13 2004-07-08 Disco Abrasive Syst Ltd Laser machining method
JP4909657B2 (en) * 2006-06-30 2012-04-04 株式会社ディスコ Processing method of sapphire substrate
CN202952400U (en) * 2012-05-09 2013-05-29 云南乾元光能产业有限公司 High-efficient sapphire bar digging cutter
CN103640096B (en) * 2013-11-26 2015-12-02 浙江上城科技有限公司 A kind of processing method of sapphire wafer
CN103895114A (en) * 2014-03-28 2014-07-02 合肥晶桥光电材料有限公司 Sapphire screen processing technique
CN203876063U (en) * 2014-05-27 2014-10-15 黄山市东晶光电科技有限公司 Sapphire crystal ingot rod-drawing pressing structure

Also Published As

Publication number Publication date
CN104760144A (en) 2015-07-08

Similar Documents

Publication Publication Date Title
CN105034182B (en) Machining method for ultra-thin sapphire flaky bodies
US10319593B2 (en) Wafer thinning method
CN104760144B (en) A kind of sapphire camera lens substrate preparation method
JP5064711B2 (en) Glass substrate cutting method and optical filter
CN104356950B (en) Sapphire wafer polishing solution
JP2005086160A (en) Method of working wafer
CN104842225A (en) Wet processing method for large-dimension sapphire substrate surface
CN104827592A (en) Processing method of large-sized sapphire substrate slice
CN106892571A (en) The manufacture method and glass substrate of glass substrate
CN105141812A (en) Method for producing sapphire camera window film
CN108237442B (en) Processing technology of ultrathin ceramic fingerprint identification sheet
CN104977638A (en) Method for preparing infrared cut-off filter
CN108972159A (en) A kind of sapphire ball cover double-side grinding method
JP2008303097A (en) Manufacturing process of silicon carbide single crystal substrate
JP6759222B2 (en) A method of strengthening the edges of a glass-laminated article and the glass-laminated article formed thereby.
CN104977639A (en) Method for preparing infrared cut-off filter
KR20120036740A (en) Scribing wheel and method for manufacturing the same
CN105922148A (en) Accurate grinding piece for surface rough polishing of optical device
CN110571131B (en) Chamfering processing method
JP2009248203A (en) Machining apparatus and method of manufacturing display panel
JP2008310202A (en) Method for manufacturing lens or lens precursor
CN111843628B (en) Method for chamfering sharp corner of irregular glass lens
KR20200066975A (en) Polishing tool of glass for smart phone
CN110744362A (en) Sapphire wafer grinding and polishing method
CN1217257A (en) Mfg. method for computer carved-stone products

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant