CN104750425B - A kind of control method of storage system and its nonvolatile memory - Google Patents
A kind of control method of storage system and its nonvolatile memory Download PDFInfo
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- CN104750425B CN104750425B CN201310746987.7A CN201310746987A CN104750425B CN 104750425 B CN104750425 B CN 104750425B CN 201310746987 A CN201310746987 A CN 201310746987A CN 104750425 B CN104750425 B CN 104750425B
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Abstract
The invention discloses a kind of storage system and its control methods of nonvolatile memory, the system comprises main control modules, memory control module, the RAM of nonvolatile memory and the system, the memory control module is connected to the main control module, the nonvolatile memory and the RAM of the system are connect with the memory control module, when the main control module issues the write order to the nonvolatile memory, the data for needing to be written the nonvolatile memory for being stored in the RAM of the system by the memory control module according to the write order, and after the write operation for completing the nonvolatile memory, the RAM release of the data for needing to be written nonvolatile memory will be used to store.By the above-mentioned means, reducing the waste of memory resource while the present invention can be improved system performance, and it can be reduced chip area.
Description
Technical field
The present invention relates to memory technology fields, more particularly to the control of a kind of storage system and its nonvolatile memory
Method processed.
Background technique
With the fast development of integrated circuit, the use of portable electronic product is also more and more extensive, and then also pushes
The development of system on chip.System on chip refers to integrates a complete system on a single chip, generally includes central processing unit
(CPU), read only memory ROM, random access storage device RAM, nonvolatile memory (such as Flash/EEPROM) and other function
It can module.Wherein, RAM is the most used in system and interacts most units with CPU, and nonvolatile memory belongs to slowly
Fast memory, especially write operation time-consuming are very long.
In the prior art, increase by one piece of write buffer additionally in systems usually to improve system performance, and write buffer one
As realized using random access storage device or register group.When to carry out write operation to nonvolatile memory, will first count
According in write-in write buffer, so that system can execute other operations, and non-volatile memory controller simultaneously will be in write buffer
Data write-in nonvolatile memory in, to realize to the write operation of nonvolatile memory.In this way, pass through write buffer
Buffer function, the data that nonvolatile memory is written can be rapidly temporarily stored in write buffer by system, to hold
The other operations of row can reduce the write time of system, improve system compared to data directly are written to nonvolatile memory
The performance of system.
However, being a non-recurrent event to the write operation of nonvolatile memory, so that corresponding write buffer is big
It is to result in waste of resources in most time in an idle state.Also, the increased write buffer of institute will increase core in system
Piece area is unfavorable for the small integrated development of system.
Summary of the invention
The invention mainly solves the technical problem of providing a kind of storage system and its controlling parties of nonvolatile memory
Method can make full use of memory resource, reduce the waste of memory resource, and can reduce System on Chip/SoC area, reduce at
This.
In order to solve the above technical problems, one technical scheme adopted by the invention is that: a kind of storage system is provided, comprising:
Main control module, memory control module, nonvolatile memory and system RAM, memory control module and main control module connect
It connects, nonvolatile memory and RAM are connect with memory control module；It issues in main control module to nonvolatile memory
When write order, memory control module is used to that the data for needing to be written nonvolatile memory to be stored in system according to write order
RAM in, and after the write operation for completing nonvolatile memory, will be used to store and need to be written the number of nonvolatile memory
According to RAM release.
Wherein, memory control module includes RAM control unit and nonvolatile memory control unit；It is non-volatile to deposit
Reservoir control unit is used to receive the write order to nonvolatile memory of main control module sending, and according to write order to RAM
Control unit sends write operation information；RAM control unit according to write operation information for will need that nonvolatile memory is written
Data be stored in RAM；Nonvolatile memory control unit, which is also used to send to read to RAM control unit, is stored in RAM
In the data for needing to be written nonvolatile memory read command；RAM control unit is used to be stored according to read command reading
The data for needing to be written nonvolatile memory in RAM, and read data are sent to nonvolatile memory control
Unit；Nonvolatile memory control unit is used for after writing data into nonvolatile memory, to RAM control unit and master
Control module be sent completely the notification signal for writing data into nonvolatile memory, with release for store need to be written it is non-volatile
The RAM of the data of property memory.
Wherein, nonvolatile memory control unit includes: that nonvolatile memory writes control subelement, for receiving master
Module is controlled to the write order of nonvolatile memory, and issues write operation control signal；Cache management subelement is write for basis
Operating control signal sends write operation information to RAM control unit；Nonvolatile memory is write control subelement and is also used to slow
It deposits management subelement and sends the read command for reading the data stored in RAM for needing to be written nonvolatile memory, to pass through
Read command is sent to RAM control unit by cache management subelement.
Wherein, RAM control unit includes: central processing unit command process subelement；Non-volatile memory controller life
Processing subelement is enabled, for receiving write operation information and read command；Address administration subelement, for receiving write operation information and master
Module is controlled when issuing the write order to nonvolatile memory, main control module to for storing needs that non-volatile memories are written
The address configuration order of the RAM of the data of device, and generated according to write operation information and address configuration order and need to write for storing
Enter the address ram information of the RAM of the data of nonvolatile memory；Subelement is selected, for writing in nonvolatile memory
During operation, the received write operation letter of address ram information and non-volatile memory controller command process subelement institute is selected
Breath and read command are sent；RAM write control subelement, for according to from selection subelement send address ram information and
The data for needing to be written nonvolatile memory are stored in RAM by write operation information；RAM reads control subelement, is used for basis
The data stored in RAM for needing to be written nonvolatile memory are read in the read command sent from selection subelement, and will
Read data are sent to nonvolatile memory and write control subelement；Wherein, cache management subelement is deposited non-volatile
Reservoir write control subelement write data into nonvolatile memory after, to selection subelement and main control module be sent completely number
According to the notification signal of write-in nonvolatile memory, it is used to store the data for needing to be written nonvolatile memory with release
RAM。
Wherein, for storing the scheduled RAM of RAM for the data for needing to be written nonvolatile memory or being randomly assigned
RAM。
In order to solve the above technical problems, another technical solution used in the present invention is: providing a kind of the non-of storage system
The control method of volatile memory, comprising: Memory Controller receives system to the write order of nonvolatile memory；Storage
The data for needing to be written nonvolatile memory are stored in the RAM of system by device controller according to write order；Memory control
Device will be used to store the RAM for the data for needing to be written nonvolatile memory after completing to the write operation of nonvolatile memory
Release.
Wherein, it includes: memory control to the step of write order of nonvolatile memory that Memory Controller, which receives system,
The nonvolatile memory control unit of device processed receives system to the write order of nonvolatile memory；Nonvolatile memory control
Unit processed sends write operation information to the RAM control unit of Memory Controller according to write order；Memory Controller is according to writing
Order by the data for needing to be written nonvolatile memory be stored in the step in the RAM of system include: RAM control unit according to
The data for needing to be written nonvolatile memory are stored in RAM by write operation information；Memory Controller is completed to non-easy
The step of discharging the RAM for being used to store the data for needing to be written nonvolatile memory after the write operation of the property lost memory packet
Include: nonvolatile memory control unit needs to be written non-volatile deposit to the transmission reading of RAM control unit is stored in RAM
The read command of the data of reservoir；RAM control unit according to read command reading is stored in RAM needs that non-volatile memories are written
The data of device, and read data are sent to nonvolatile memory control unit；Nonvolatile memory control unit
Nonvolatile memory is write data into, to complete the write operation to nonvolatile memory；Nonvolatile memory control is single
Member is sent completely the notification signal for writing data into nonvolatile memory to RAM control unit and system, to discharge for depositing
Storage needs to be written the RAM of the data of nonvolatile memory.
Wherein, the nonvolatile memory control unit of Memory Controller receives system and writes to nonvolatile memory
The step of order includes: that the nonvolatile memory of nonvolatile memory control unit writes control subelement reception system to non-
The write order of volatile memory, and issue write operation control signal；Nonvolatile memory control unit according to write order to
The step of RAM control unit transmission write operation information of Memory Controller includes: the slow of nonvolatile memory control unit
It deposits management subelement and receives write operation control signal, and signal is controlled according to write operation and sends write operation letter to RAM control unit
Breath；Nonvolatile memory control unit needs to be written non-volatile deposit to the transmission reading of RAM control unit is stored in RAM
The step of read command of the data of reservoir includes: that nonvolatile memory writes control subelement to the transmission reading of cache management subelement
Take the read command of the data stored in RAM for needing to be written nonvolatile memory；Cache management subelement receives read command,
And read command is sent to RAM control unit.
Wherein, the data for needing to be written nonvolatile memory are stored in RAM according to write operation information by RAM control unit
In step include: RAM control unit non-volatile memory controller command process subelement receive write operation information；
The address administration subelement of RAM control unit receives write operation information, and is being issued according to write operation information and system to non-easy
When the write order of the property lost memory, system needs to be written the address of the RAM of data of nonvolatile memory and matches to for storing
Order is set, the address ram information of the RAM for storing the data for needing to be written nonvolatile memory is generated；RAM control unit
The received write operation of selection subelement selection address ram information and non-volatile memory controller command process subelement institute
Information is sent；The RAM write control subelement of RAM control unit is according to the address ram information sent from selection subelement
The data for needing to be written nonvolatile memory are stored in RAM with write operation information；RAM control unit is read according to read command
The data stored in RAM for needing to be written nonvolatile memory are taken, and read data are sent to non-volatile deposit
The step of reservoir control unit includes: that non-volatile memory controller command process subelement receives read command；Selection is single
The received read command of member selection non-volatile memory controller command process subelement institute is sent；RAM control unit
RAM read control subelement according to from selection subelement send read command reading it is stored in RAM need to be written it is non-volatile
The data of property memory, and read data are sent to nonvolatile memory and write control subelement；Non-volatile memories
The step of device control unit writes data into nonvolatile memory includes: that nonvolatile memory writes control subelement for data
It is written in nonvolatile memory；Nonvolatile memory control unit is sent completely to RAM control unit and system by data
The step of notification signal of nonvolatile memory is written, which includes: cache management subelement, writes control in nonvolatile memory
After unit writes data into nonvolatile memory, it is sent completely to selection subelement and system and writes data into non-volatile deposit
The notification signal of reservoir, to discharge the RAM for storing the data for needing to be written nonvolatile memory.
The beneficial effects of the present invention are: being in contrast to the prior art, in storage system of the invention, in main control module
When issuing the write order to nonvolatile memory, memory control module will need that non-volatile deposit is written according to the write order
The data of reservoir are stored in the RAM of system, and after the write operation for completing nonvolatile memory, which are used to store
The RAM release for needing to be written the data of nonvolatile memory, by the above-mentioned means, compared to volume in systems is passed through in existing
The outer technology for increasing write buffer, the present invention make full use of the RAM of system itself as the write buffer of nonvolatile memory, and
The RAM for being used to store the data for needing to be written nonvolatile memory is released after the write operation for completing nonvolatile memory
It puts, so that the memory that the partial RAM still can be used as system uses, thus while improving system performance, can be avoided non-
The write buffer of volatile memory is left unused, and then reduces the waste of memory resource, and do not need additionally to increase non-volatile
The write buffer module of memory, can reduce the area of chip.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of one embodiment of storage system of the present invention；
Fig. 2 is the signal and data flow schematic diagram of storage system shown in FIG. 1；
Fig. 3 is the concrete structure schematic diagram of storage system shown in FIG. 1；
Fig. 4 is the signal and data flow schematic diagram of storage system shown in 3；
Fig. 5 is the flow chart of one embodiment of control method of the nonvolatile memory of storage system of the present invention；
Fig. 6 is memory control in one embodiment of control method of the nonvolatile memory of storage system of the present invention
Device receives system to the flow chart of the write order of nonvolatile memory；
Fig. 7 is RAM control unit in one embodiment of control method of the nonvolatile memory of storage system of the present invention
The data flow chart stored in RAM that nonvolatile memory will be needed to be written according to write operation information；
Fig. 8 is in one embodiment of control method of the nonvolatile memory of storage system of the present invention, and memory is complete
The RAM for being used to store the data for needing to be written nonvolatile memory is released after the write operation of the pairs of nonvolatile memory
The flow chart put；
Fig. 9 is RAM control unit in one embodiment of control method of the nonvolatile memory of storage system of the present invention
The data stored in RAM for needing to be written nonvolatile memory are read according to read command, and read data are sent
To the flow chart of nonvolatile memory control unit.
Specific embodiment
Below in conjunction with drawings and embodiments, the present invention is described in detail.
Refering to fig. 1, in an embodiment of storage system of the present invention, storage system includes main control module 1, memory control
The running memory RAM4 of module 2, nonvolatile memory 3 and system.Memory control module 2 passes through bus and main control module 1
It is communicated.Wherein, main control module 1 is the central processing unit (CPU) of system.
When needing to carry out write operation to nonvolatile memory 3, main control module 1 is initiated to nonvolatile memory 3
Write order, memory control module 2 receive main control module 1 issue write order, and according to the write order will need to be written it is non-easily
The data of the property lost memory 3 are temporarily stored in the RAM4 of system.And be used for the data of temporary storage non-volatile memories 3
This partial RAM 4 can be preassigned RAM.Certainly, in other embodiments, it is also possible to during write operation
The RAM that system is randomly assigned.It is deposited after the data of nonvolatile memory 3 are stored in RAM4, or by non-volatile
During the data of reservoir 3 are stored in RAM4, memory control module 2 reading have been stored in RAM4 need to be written it is non-easily
The data of the property lost memory 3, and read data are written in nonvolatile memory 3, it is deposited to realize to non-volatile
The write operation of reservoir 3.Memory control module 2 is non-by the data write-in for needing to be written nonvolatile memory 3 in RAM4
After volatile memory 3, sends and completed the related data write-in nonvolatile memory 3 of RAM4 to main control module 1
Notification signal, with notify main control module 1 this can be used for store need to be written nonvolatile memory 3 data RAM4 after
The continuous memory normal use as system, so that storage will be used for and need to be written the data of nonvolatile memory 3 by realizing
RAM4 release.Compared to existing technologies, by using the RAM of system as nonvolatile memory 3 during write operation
Cache module, and the data for the nonvolatile memory that will be stored in RAM4 be written nonvolatile memory 3 after, by phase
Thus the RAM release answered improves systematicness so that main control module 1 can continue the partial RAM as the memory of system to use
It while energy, realizes the multiplexing to system storage, can be avoided the waste of memory resource, and do not need additionally to increase non-easy
The cache module of the property lost memory 3, can reduce the area of chip, advantageously reduce cost.
In other embodiments, in order to further increase system performance, memory control module 2 can be will be in RAM4
After a part of data write-in nonvolatile memory 3 of the nonvolatile memory 3 stored, sent to main control module 1
By the notification signal of this partial data write-in nonvolatile memory 3, to notify main control module 1 that can will store the partial data
RAM4 continue to use as the memory of system, thus realize will be used to store the partial data RAM4 release, without
The notification signal that data are written just is sent completely to main control module 1 after having read all data.I.e. by the number in RAM4
Simultaneously according to write-in nonvolatile memory 3, the RAM4 for being used to store the data for having completed write-in is discharged.Certainly, also
It can be and discharge corresponding RAM4 after completing all processes of write operation of nonvolatile memory 3, it can also be non-in completion
After the write operation of volatile memory 3, corresponding RAM4 is just discharged after the time of setting, herein without specifically limiting.
With continued reference to Fig. 1, and Fig. 2 is combined, the memory control module 2 of present embodiment includes 21 He of RAM control unit
Nonvolatile memory control unit 22.Wherein, when needing that data are written to nonvolatile memory 3, main control module 1 is issued
Write order, nonvolatile memory control unit 22 receive the write order to nonvolatile memory 3 that main control module 1 issues,
And the write order is converted to and writes timing, to write data into nonvolatile memory 3 according to timing is write in subsequent process.Together
When, nonvolatile memory control unit 22 sends write operation information to RAM control unit 21 according to the write order.The write operation
The address information in RAM is written for example including write signal and by the data of nonvolatile memory in information.RAM control unit 21
According to received write operation information, the data for needing to be written nonvolatile memory 3 are stored in the partial RAM 4 of system.
After RAM control unit 21 writes data into corresponding RAM4, nonvolatile memory control unit 22 is to RAM control unit 21
Send the read command for reading the data for needing to be written nonvolatile memory 3 being stored in RAM4.It is of course also possible to be
During RAM control unit 21 writes data into RAM4, nonvolatile memory control unit 22 issues the reading for reading data
Order.RAM control unit 21 reads the number for needing to be written nonvolatile memory 3 being stored in RAM4 according to the read command
According to, and read data are sent to nonvolatile memory control unit 22, thus nonvolatile memory control unit
22, by received data write-in nonvolatile memory 3, realize the write operation to nonvolatile memory 3.In addition,
Nonvolatile memory control unit 22 is non-easily by the data write-in for needing to be written nonvolatile memory 3 being stored in RAM4
After the property lost memory 3, at the same it is that the corresponding data write-in in RAM4 is non-to main control module 1 and the transmission of RAM control unit 21
The notification signal of volatile memory 3, to notify this can be used to store by main control module 1 to need that nonvolatile memory is written
The RAM4 of 3 data continues the memory normal use as system, and notice RAM control unit 21 is not needed to receive again and be come from
The order of nonvolatile memory control unit 22, to realize the RAM4 for the data that will be used for storage non-volatile memories 3
Release, it is same in the performance of the system of offer thus, it is possible to make full use of the RAM of system to realize the write access to nonvolatile memory
When, the write buffer module for additionally increasing nonvolatile memory is not needed, chip area can be reduced.
Certainly, in other embodiments, RAM control unit and nonvolatile memory control unit can integrate same
It is realized in one control circuit.
Further, refering to Fig. 3, and Fig. 4 is combined, in present embodiment, nonvolatile memory control unit 22 includes
Nonvolatile memory writes control subelement 221 and cache management subelement 222.RAM control unit 21 includes non-volatile deposits
Memory controller command process subelement 211, address administration subelement 212, RAM write control subelement 213 and RAM read control
Subelement 214.In addition, RAM control unit 21 can also other than receiving the order from nonvolatile memory control unit 22
The order from main system control module 1 is received, therefore, the RAM control unit 21 of present embodiment further includes central processing unit life
Enable processing subelement 215 and selection subelement 216.Central processing unit command process subelement 215 comes from master control mould for receiving
The order of block 1.Select subelement 216 according to nonvolatile memory whether for during write operation, selection is deposited from non-volatile
The order of a wherein side in reservoir control unit 22 and main control module 1 is sent to RAM write control subelement 213, i.e., to coming from
A wherein side for central processing unit command process subelement 215 and non-volatile memory controller command process subelement 211
Order selected, while by RAM read control subelement 214 reading data select return.
When main control module 1 initiates the write order to nonvolatile memory 3, nonvolatile memory writes control subelement
221 receive the write order to nonvolatile memory that system issues, and the write order is converted to and writes timing to carry out writing behaviour
Make, while issuing write operation to cache management subelement 222 and controlling signal.Cache management subelement 222 is deposited according to non-volatile
Reservoir writes the write operation that control subelement 221 is sent and controls signal to the transmission write operation information of RAM control unit 21, the write operation
The address information that information includes write signal and is stored in the data for needing to be written nonvolatile memory 3 in RAM4.It is controlled in RAM
In unit 21 processed, non-volatile memory controller command process subelement 211 is for receiving the transmission of cache management subelement 222
Write operation information.The selection selection of subelement 216 writes behaviour from non-volatile memory controller command process subelement 211
Make information, which is sent to RAM write control subelement 213.Address administration subelement 212 is for receiving master control mould
When issuing the write order to nonvolatile memory 3, main control module 1 to for storing needs that non-volatile memories are written block 1
The address configuration order of the RAM4 of the data of device 3, while the write operation information from cache management subelement 222 is also received, with
Address ram information is generated according to write operation information and address configuration order, which includes non-volatile for storing
The data of address (i.e. plot) and nonvolatile memory 3 of this partial RAM of the data of memory 3 in whole system RAM4
It is stored in the address (i.e. inclined location) in this partial RAM.Select subelement 216 during the write operation of nonvolatile memory, choosing
It selects the corresponding address ram information and is sent to RAM write control subelement 213.RAM write controls subelement 213 according to from selection
The write operation information and address ram information of subelement 216, the data for needing to be written nonvolatile memory 3 are stored in accordingly
RAM in.After RAM write control subelement 213 writes data into corresponding RAM4, it is single that nonvolatile memory writes control
Member 221 is issued to cache management subelement 222 reads the data for needing to be written nonvolatile memory 3 being stored in RAM4
Read command, the read command is sent to non-volatile memory controller command process by cache management subelement 222
Unit 211.The selection of subelement 216 is selected to manage the read command of unit 211 from non-volatile memory controller order virgin, it will
The read command is sent to RAM and reads control subelement 214.RAM reads control subelement 214 and reads needs from RAM4 according to read command
The data of nonvolatile memory 3 are written.It selects subelement 216 that RAM is read the read data selection of control subelement to return
To non-volatile memory controller command process subelement 211, to pass through non-volatile memory controller command process
Unit 211 sends the data to cache management subelement 222.Received data are sent to by cache management subelement 222
Nonvolatile memory write control subelement 221, thus nonvolatile memory write control subelement 221 write data into it is non-easily
In the property lost memory 3, to realize the write operation to nonvolatile memory 3.
Control subelement 221 is write in nonvolatile memory, and the data write-in of the nonvolatile memory 3 in RAM is non-easily
After the property lost memory 3, cache management subelement 222 writes the write operation state of control subelement 221 (i.e. according to non-volatile memories
Completed to write data into nonvolatile memory), at the same to main control module 1 and selection subelement 216 send incited somebody to action
The notification signal of the data write-in nonvolatile memory 3 of nonvolatile memory 3 in RAM4, to notify that main control module 1 can
This to be used to store the RAM4 of the data for needing to be written nonvolatile memory 3 still as the memory normal use of system,
And notice selection subelement 216 do not need again to the order of non-volatile memory controller command process subelement 211 into
Row selection discharges the RAM for being used for the data of storage non-volatile memories to realize.
In present embodiment, by slow as the writing during write operation of nonvolatile memory 3 using the RAM4 of system
It deposits, and after by the data write-in nonvolatile memory for needing to be written nonvolatile memory 3 in RAM4, discharges for depositing
Storage needs to be written the RAM4 of the data of nonvolatile memory 3, so that this partial RAM is still used as Installed System Memory to use, it can
While improving system performance, realizes the multiplexing of system memory resources, reduce the waste of memory resource, and due to being not required to
Increase additional cache module, the area of chip can be reduced, advantageously reduce cost.Certainly, in other embodiments,
RAM is discharged after being also possible to all processes for completing the write operation of nonvolatile memory, herein without specifically limiting.
Refering to Fig. 5, in one embodiment of control method of the nonvolatile memory of storage system of the present invention, storage system
Including the Memory Controller for controlling nonvolatile memory.Nonvolatile memory is connect with Memory Controller, is deposited
Memory controller and the central processing unit of system connect, to receive the order of central processing unit.The control method includes as follows
Step:
Step S501: Memory Controller receives system to the write order of nonvolatile memory.
Memory Controller is used to control the access to nonvolatile memory.When the central processing unit of system is needed to non-
Volatile memory carry out write operation when, by Memory Controller receive system write order, with according to the write order to it is non-easily
The property lost memory carries out write operation.
Step S502: the data for needing to be written nonvolatile memory are stored in by Memory Controller according to write order is
In the RAM of system.
Nonvolatile memory is slow storage.In present embodiment, during the write operation of nonvolatile memory,
The memory RAM of system is marked off into a part using the write buffer as nonvolatile memory, will need to be written first non-volatile
The data of property memory are first stored in this partial RAM, data quick storage are enabled to by the effect of RAM, to improve
The performance of system.
Step S503: Memory Controller will be used to store needs and write after completing to the write operation of nonvolatile memory
Enter the RAM release of the data of nonvolatile memory.
Non-volatile memories are written in the data for being stored in the nonvolatile memory in the RAM of system by Memory Controller
After device, this partial RAM is discharged, so that the central processing unit of system can continue the partial RAM as the memory of system to make
With, thus while improving system performance, realizes the multiplexing to system storage, can be avoided the waste of memory resource,
And the write buffer for additionally increasing nonvolatile memory is not needed, the area of chip can be reduced, advantageously reduce cost.
Wherein, in present embodiment, Memory Controller includes that nonvolatile memory control unit and RAM control are single
Member.
Refering to Fig. 6, Memory Controller receives system and specifically includes to the step of write order of nonvolatile memory:
Step S601: the nonvolatile memory control unit of Memory Controller receives system to nonvolatile memory
Write order.
Nonvolatile memory control unit is used to control the access operation to nonvolatile memory, and system is to non-volatile
The write order of property memory is received by nonvolatile memory control unit.Further, nonvolatile memory controls
Unit includes that nonvolatile memory writes control subelement and cache management subelement.Nonvolatile memory writes control subelement
Reception system sends write operation to cache management subelement and controls signal to the write order of nonvolatile memory.
Step S602: nonvolatile memory control unit is according to write order to the RAM control unit of Memory Controller
Send write operation information.
Specifically, cache management subelement receives nonvolatile memory and writes the write operation control that control subelement is sent
After signal, signal is controlled according to the write operation and sends write operation information to RAM control unit.
To which the data for needing to be written nonvolatile memory are stored in by RAM control unit according to write operation information is
In the RAM of system.RAM control unit is used to control the access operation to system RAM.Write operation is being carried out to nonvolatile memory
When, first it will need to be written the data quick storage of nonvolatile memory in the RAM of system by RAM control unit, to mention
High system performance.
Further, RAM control unit includes non-volatile memory controller command process subelement, address administration
Unit, RAM write control subelement, RAM read control subelement, central processing unit command process subelement and selection subelement.
Therefore, refering to Fig. 7, the data for needing to be written nonvolatile memory are stored in RAM according to write operation information by RAM control unit
In specific steps, include the following steps:
The non-volatile memory controller command process subelement of step S701:RAM control unit receives write operation letter
Breath.
Non-volatile memory controller command process subelement comes from nonvolatile memory control unit for receiving
Signal.
The address administration subelement of step S702:RAM control unit receives write operation information, and according to write operation information and
For system when issuing to the write order of nonvolatile memory, system needs to be written the number of nonvolatile memory to for storing
According to RAM address configuration order, generate for store the data for needing to be written nonvolatile memory RAM address ram
Information.
Wherein, address ram information includes this partial RAM of the data for storage non-volatile memories in whole system
The data of address (i.e. plot) and nonvolatile memory in RAM are stored in the address (i.e. inclined location) in this partial RAM.
The selection subelement selection address ram information and non-volatile memory controller of step S703:RAM control unit
The received write operation information of command process subelement institute is sent.
RAM control unit can also receive other than receiving the order from nonvolatile memory control unit from being
The central processing unit command process subelement of the order of system central processing unit, RAM control unit comes from central processing for receiving
The order of device.Select subelement according to nonvolatile memory whether for during write operation, selection comes from nonvolatile memory
The order of a wherein side for control unit and central processing unit is sent to RAM write control subelement, i.e., to from central processing unit
The order of a wherein side for command process subelement and non-volatile memory controller command process subelement selects, together
When by RAM read control subelement reading data select return.
The RAM write control subelement of step S704:RAM control unit is according to the address ram sent from selection subelement
The data for needing to be written nonvolatile memory are stored in RAM by information and write operation information.
Through the above steps, RAM control unit, which is realized, will need to be written the data writing systems of nonvolatile memory
In RAM.
Wherein, refering to Fig. 8, in present embodiment, memory is after completing to the write operation of the nonvolatile memory
The step of by the RAM release for being used to store the data for needing to be written nonvolatile memory, specifically comprise the following steps:
Step S801: nonvolatile memory control unit sends to RAM control unit and reads needs stored in RAM
The read command of the data of nonvolatile memory is written.
Specifically, when nonvolatile memory is written in the data for needing to be written nonvolatile memory by RAM control unit
Afterwards, the nonvolatile memory of nonvolatile memory control unit writes control subelement and sends reading to cache management subelement
The read command of the data stored in RAM for needing to be written nonvolatile memory.Cache management subelement receives the read command,
And read read command is sent to the non-volatile memory controller command process subelement of RAM control unit.
Step S802:RAM control unit according to read command reading is stored in RAM needs that nonvolatile memory is written
Data, and read data are sent to nonvolatile memory control unit.
Specifically, refering to Fig. 9, including following sub-step:
Sub-step S8021: non-volatile memory controller command process subelement receives read command.
Sub-step S8022: selection subelement selection non-volatile memory controller command process subelement institute is received
Read command is sent.
The RAM of sub-step S8023:RAM control unit reads control subelement to order according to the reading sent from selection subelement
It enables and reads data stored in RAM for needing to be written nonvolatile memory, and read data are sent to non-volatile
Property memory writes control subelement.
RAM read control subelement read RAM in need to be written the data of nonvolatile memory after, select subelement choosing
It selects and carries out returning to non-volatile memory controller command process subelement by the RAM reading control read data of subelement,
To send the data to cache management subelement by non-volatile memory controller command process subelement.Cache management
Received data are sent to nonvolatile memory and write control subelement by unit.
Step S803: nonvolatile memory control unit writes data into nonvolatile memory, to complete to non-easy
The write operation of the property lost memory.
It is write data into nonvolatile memory specifically, nonvolatile memory writes control subelement.
Step S804: nonvolatile memory control unit is sent completely to RAM control unit and system and writes data into
The notification signal of nonvolatile memory, to discharge the RAM for storing the data for needing to be written nonvolatile memory.
Specifically, cache management subelement writes control subelement in nonvolatile memory and writes data into non-volatile deposit
After reservoir, the notification signal for having completed to write data into nonvolatile memory is sent, to selection subelement and system with logical
Know that selection subelement does not need again to select the order of non-volatile memory controller command process subelement, Yi Jitong
Know that this can be used to store this partial RAM for the data for needing to be written nonvolatile memory still by the central processing unit of system
As the memory normal use of system, so that the RAM for being used to store the data for needing to be written nonvolatile memory be discharged.
Mode the above is only the implementation of the present invention is not intended to limit the scope of the invention, all to utilize this
Equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content, it is relevant to be applied directly or indirectly in other
Technical field is included within the scope of the present invention.
Claims (7)
1. a kind of storage system, which is characterized in that the system is system on chip, comprising: main control module, memory control mould
The RAM of block, nonvolatile memory and the system, the memory control module are connected to the main control module, described non-
Volatile memory and the RAM are connect with the memory control module；The RAM is system running memory；
When the main control module issues the write order to the nonvolatile memory, the memory control module is used for root
The data for needing to be written the nonvolatile memory are stored in at least partly RAM of the system according to the write order,
It, will at least partly RAM release and after the write operation for completing the nonvolatile memory；To notify the main control module
The RAM that this can be used to store the data of the nonvolatile memory continues memory normal use as system；
Wherein, the memory control module includes RAM control unit and nonvolatile memory control unit；
The nonvolatile memory control unit is used to receive that the main control module to issue to the nonvolatile memory
Write order, and according to the write order to the RAM control unit send write operation information；
The RAM control unit is for depositing the data for needing to be written the nonvolatile memory according to the write operation information
It is stored in at least partly RAM；
The nonvolatile memory control unit, which is also used to send to read to the RAM control unit, is stored in at least portion
Divide the read command of the data for needing to be written nonvolatile memory in RAM；
The RAM control unit, which is used to be read to be stored in at least partly RAM according to the read command, needs to be written institute
The data of nonvolatile memory are stated, and the read data are sent to the nonvolatile memory control unit；
The nonvolatile memory control unit is used for after the nonvolatile memory is written in the data, to described
RAM control unit and the main control module are sent completely the notification signal that the data are written to the nonvolatile memory,
To discharge at least partly RAM.
2. system according to claim 1, which is characterized in that
The nonvolatile memory control unit includes:
Nonvolatile memory writes control subelement, for receiving the main control module to writing life described in nonvolatile memory
It enables, and issues write operation control signal；
Cache management subelement sends the write operation to the RAM control unit for controlling signal according to the write operation
Information；
The nonvolatile memory writes control subelement and is also used to be stored in institute to cache management subelement transmission reading
The read command of the data for needing to be written nonvolatile memory at least partly RAM is stated, to pass through the cache management
The read command is sent to the RAM control unit by subelement.
3. system according to claim 2, which is characterized in that
The RAM control unit includes:
Central processing unit command process subelement；
Non-volatile memory controller command process subelement, for receiving the write operation information and the read command；
Address administration subelement is being issued for receiving the write operation information and the main control module to nonvolatile memory
The write order when, address configuration order of the main control module at least partly RAM, and according to the write operation believe
Breath and the address configuration order generate the address ram information of at least partly RAM；
Subelement is selected, for during the write operation of the nonvolatile memory, selecting the address ram information and described
The non-volatile memory controller command process subelement received write operation information of institute and the read command are sent；
RAM write controls subelement, for according to the address ram information sent from the selection subelement and described writing behaviour
Make information the data for needing to be written the nonvolatile memory are stored in at least partly RAM；
RAM reads control subelement, described for being stored according to the read command reading sent from the selection subelement
The data for needing to be written the nonvolatile memory at least partly RAM, and the read data are sent to institute
It states nonvolatile memory and writes control subelement；
Wherein, the cache management subelement the nonvolatile memory write control subelement will the data write-in described in
After nonvolatile memory, it is sent completely to the selection subelement and the main control module data write-in is described non-easy
The notification signal of the property lost memory, to discharge at least partly RAM.
4. system according to claim 1, which is characterized in that
At least partly RAM is the scheduled RAM or RAM being randomly assigned.
5. a kind of control method of the nonvolatile memory of storage system, which is characterized in that the system is system on chip, packet
It includes:
Memory Controller receives system to the write order of nonvolatile memory；
The data for needing to be written the nonvolatile memory are stored in institute according to the write order by the Memory Controller
It states in at least partly RAM of system；
Wherein, the RAM is system running memory；
The Memory Controller releases at least partly RAM after completing to the write operation of the nonvolatile memory
It puts；The RAM of data to notify main control module this can be used to store the nonvolatile memory continues as being
The memory normal use of system；
Wherein, the Memory Controller reception system includes: to the write order of nonvolatile memory
The nonvolatile memory control unit of the Memory Controller receives the system to the nonvolatile memory
Write order；
The nonvolatile memory control unit is sent out according to the write order to the RAM control unit of the Memory Controller
Send write operation information；
The data for needing to be written the nonvolatile memory are stored in institute according to the write order by the Memory Controller
The step stated in at least partly RAM of system includes:
The data for needing to be written the nonvolatile memory are stored in by the RAM control unit according to the write operation information
In at least partly RAM；
The Memory Controller will at least partly RAM release after completing to the write operation of the nonvolatile memory
The step of include:
The nonvolatile memory control unit, which sends to read to the RAM control unit, is stored in at least partly RAM
In the data for needing to be written nonvolatile memory read command；
The RAM control unit read according to the read command be stored in at least partly RAM need to be written it is described non-
The data of volatile memory, and the read data are sent to the nonvolatile memory control unit；
The nonvolatile memory is written in the data by the nonvolatile memory control unit, to complete to described non-
The write operation of volatile memory；
The nonvolatile memory control unit is sent completely to the RAM control unit and the system and writes the data
Enter the notification signal of the nonvolatile memory, to discharge at least partly RAM.
6. control method according to claim 5, which is characterized in that
The nonvolatile memory control unit of the Memory Controller receives the system to the nonvolatile memory
Write order the step of include:
The nonvolatile memory of the nonvolatile memory control unit writes control subelement and receives system to non-volatile
The write order of memory, and issue write operation control signal；
The nonvolatile memory control unit is sent out according to the write order to the RAM control unit of the Memory Controller
The step of sending write operation information include:
The cache management subelement of the nonvolatile memory control unit receives the write operation and controls signal, and according to institute
It states write operation and controls signal to the RAM control unit transmission write operation information；
The nonvolatile memory control unit, which sends to read to the RAM control unit, is stored in at least partly RAM
In the data for needing to be written nonvolatile memory read command the step of include:
The nonvolatile memory write control subelement sent to the cache management subelement read be stored in it is described at least
The read command of the data for needing to be written nonvolatile memory in partial RAM；
The cache management subelement receives the read command, and the read command is sent to the RAM control unit.
7. control method according to claim 6, which is characterized in that
The data for needing to be written the nonvolatile memory are stored in by the RAM control unit according to the write operation information
Step in at least partly RAM includes:
The non-volatile memory controller command process subelement of the RAM control unit receives the write operation information；
The address administration subelement of the RAM control unit receives the write operation information, and according to the write operation information and
System is when issuing the write order to nonvolatile memory, address configuration order of the system at least partly RAM
Generate the address ram information of at least partly RAM；
The selection subelement of the RAM control unit selects the address ram information and the non-volatile memory controller
The received write operation information of command process subelement institute is sent；
The RAM write control subelement of the RAM control unit is believed according to the address ram sent from the selection subelement
The data for needing to be written the nonvolatile memory are stored in at least partly RAM by breath and the write operation information；
The RAM control unit read according to the read command be stored in at least partly RAM need to be written it is described non-
The data of volatile memory, and the step of read data are sent to the nonvolatile memory control unit
Include:
The non-volatile memory controller command process subelement receives the read command；
The selection subelement select the received read command of the non-volatile memory controller command process subelement institute into
Row is sent；
The RAM of the RAM control unit reads control subelement and is read according to the read command sent from the selection subelement
The data for needing to be written the nonvolatile memory being stored in at least partly RAM are taken, and will be read described
Data are sent to the nonvolatile memory and write control subelement；
The nonvolatile memory control unit by the data be written the nonvolatile memory the step of include:
The nonvolatile memory writes control subelement and the data is written in the nonvolatile memory；
The nonvolatile memory control unit is sent completely to the RAM control unit and the system and writes the data
The step of entering the notification signal of the nonvolatile memory include:
The cache management subelement the nonvolatile memory write control subelement by the data write-in it is described it is non-easily
After the property lost memory, it is sent completely and the nonvolatile memory is written into the data to the selection subelement and system
Notification signal, to discharge at least partly RAM.
Priority Applications (3)
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| CN201310746987.7A CN104750425B (en) | 2013-12-30 | 2013-12-30 | A kind of control method of storage system and its nonvolatile memory |
| US14/311,221 US9043538B1 (en) | 2013-12-30 | 2014-06-20 | Memory system and method for controlling nonvolatile memory |
| PCT/CN2014/094998 WO2015101211A1 (en) | 2013-12-30 | 2014-12-25 | Memory system and control method for nonvolatile memory of system |
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| CN201310746987.7A CN104750425B (en) | 2013-12-30 | 2013-12-30 | A kind of control method of storage system and its nonvolatile memory |
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| KR102558947B1 (en) * | 2016-08-25 | 2023-07-25 | 에스케이하이닉스 주식회사 | Data storage device |
| CN110908600B (en) * | 2019-10-18 | 2021-07-20 | 华为技术有限公司 | Data access method and device and first computing equipment |
| CN113296701A (en) * | 2021-05-14 | 2021-08-24 | 尧云科技(西安)有限公司 | Solid-state storage method and solid-state storage device |
| CN113253935B (en) * | 2021-05-29 | 2022-09-09 | 江苏华存电子科技有限公司 | Wear leveling system of nonvolatile memory |
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