CN104733277A - Plasma etching system - Google Patents
Plasma etching system Download PDFInfo
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- CN104733277A CN104733277A CN201310718975.3A CN201310718975A CN104733277A CN 104733277 A CN104733277 A CN 104733277A CN 201310718975 A CN201310718975 A CN 201310718975A CN 104733277 A CN104733277 A CN 104733277A
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- pulse signal
- spectrometer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Plasma Technology (AREA)
Abstract
A plasma etching system comprises a radio-frequency source, an end point detecting system and a reaction chamber. The end point detecting system comprises a spectrograph which comprises an optical grating, wherein the radio-frequency source and the spectrograph are connected with the reaction chamber, and the radio-frequency source and the spectrograph are connected in parallel; the radio-frequency source is controlled by a first pulse signal, the on and off of the optical grating of the spectrograph are controlled through a second pulse signal, and the first pulse signal and the second pulse signal are synchronous. By means of the plasma etching system, the end point of the pulse plasma etching technology can be detected.
Description
Technical field
The present invention relates to plasma etching field, particularly relate to a kind of plasma etching system.
Background technology
In plasma etch process, due to the Selection radio not good to etachable material, therefore need etching terminal to detect detection etch technique and stop etching to reduce the overetch to material beneath.
End-point detecting system measures some different parameters, as the change of the change of etch rate, active reaction agent in the type of removed corrosion product or gas discharge in etching.A kind of method for end point determination is emission spectrometry.This method of measurement is integrated in etching cavity to carry out Real-Time Monitoring.
In continuous wave radio frequency plasma etching process, adopt and based on light intensity change, etching terminal is detected.But, because the change of light intensity is relevant with plasma, in double frequency or multifrequency pulse plasma, the intensity of plasma emission spectroscopy periodically can change along with radio-frequency pulse, therefore, be applied in changing based on light intensity in continuous wave radio frequency plasma to carry out can not using in the system double-frequency pulse plasma etch process of terminal detection.
Summary of the invention
In view of this, the invention provides a kind of plasma etching system, to realize the end point determination of paired pulses plasma etch process.
In order to realize foregoing invention object, present invention employs following technical scheme:
A kind of plasma etching system, comprise, radio frequency source, end-point detecting system and reaction chamber, described end-point detecting system comprises spectrometer, described spectrometer comprises grating, wherein, described radio frequency source is connected with described reaction chamber respectively with described spectrometer, and described radio frequency source and described spectrometer are connected in parallel; Described radio frequency source is controlled by the first pulse signal, and the switch of described spectrometer grating is controlled by the second pulse signal, described first pulse signal and described second pulse signal synchronous.
Preferably, described first pulse signal and described second pulse signal are for be produced by same pulse signal generator, and described radio frequency source and described spectrometer are connected in parallel between described pulse signal generator and described reaction chamber.
Preferably, also comprise, the pulse counter between described pulse signal generator and described spectrometer, described pulse counter is used for the quantity of accumulative described pulse, after the quantity of described pulse reaches predetermined value, controls the switch of described spectrometer grating.
Preferably, described predetermined value is 5.
Preferably, described radio frequency source is multiple.
Preferably, described end-point detecting system utilizes the emission spectrum of special wavelength light to detect; The light of the specific wavelength that the reacting gas of described specific wavelength only in plasma etch process or byproduct of reaction produce.
Preferably, described end-point detecting system utilizes the absorption spectrum of special wavelength light to detect; The light of the specific wavelength that the reacting gas of described specific wavelength only in plasma etch process or byproduct of reaction produce.
Compared to prior art, the present invention has following beneficial effect:
Plasma etching system provided by the invention is pulsed plasma etching system, wherein, synchronous for the first pulse signal and the second pulse signal for the spectrometer grating switch controlling end-point detecting system controlling radio frequency source.Because this two pulse signal is synchronous, the generation of pulsed plasma is synchronous with the switch of grating, and that is, when producing plasma, grating is opened, and when not producing plasma, grating is closed.Like this, the light intensity of spectrometer collection is light intensity when producing plasma, and when not producing plasma in reaction chamber, spectrometer does not gather light intensity, thus, the light intensity detected is continuous print, instead of pulse feature, so when light intensity changes, then show that plasma etch process reaches terminal.Thus the terminal of pulsed plasma etching technics can be detected by plasma etching system provided by the invention.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the schematic diagram that the pulse power light intensity time cycle property that cause asynchronous with spectrometer grating switch is vibrated;
Fig. 2 is the structural representation of a kind of plasma etching system of the embodiment of the present invention;
Fig. 3 is the structural representation of the another kind of plasma etching system of the embodiment of the present invention.
Embodiment
For making the object of the embodiment of the present invention, technical scheme and advantage clearly, below in conjunction with the accompanying drawing in the embodiment of the present invention, technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
In pulsed plasma etching system, in order to realize the detection to etching terminal, can be controlled by the switch of pulse signal to spectrometer grating, open for during high level signal at pulse signal to realize spectrometer grating, close when pulse signal is low level signal, the light intensity collected like this is continuous print, thus can be realized the end point determination of plasma etching technics by the change of light intensity.
By pulse signal in the control method of the switch of spectrometer grating, its difficult point is the synchronous of the switch how realizing pulse radiation frequency source and spectrometer grating.If both are synchronously bad, like this, point switching time of spectrometer grating is inconsistent with some switching time in pulse radiation frequency source, derivative spectomstry collection point may be positioned at the diverse location of pulse radiation frequency source opening or closed condition, or both switching times are inconsistent, the light intensity collected is caused to present rectilinear oscillation in time, as shown in Figure 1.Due to the rectilinear oscillation of light intensity, realize the detection of etching terminal by the change of light intensity inaccurate or be difficult to measure etching terminal.
In order to make pulse radiation frequency source synchronous with the switch of spectrometer grating, and then obtaining the light intensity of stable plasma emission spectroscopy, the invention provides a kind of plasma etching system.
As shown in Figure 2, the plasma etching system that the embodiment of the present invention provides, comprises pulse signal generator 01, radio frequency source 02, end-point detecting system 03 and reaction chamber 04.
Wherein, pulse signal generator 01 can produce square-wave signal, so the signal that this pulse signal generator 01 produces comprises high level signal and low level signal.
End-point detecting system 03 using plasma emission spectrum method carries out end point determination, and it comprises spectrometer 31 and end point determination computer 32, and described spectrometer 31 comprises grating.The switch of its grating can control the time period gathering light intensity.When grating is opened, spectrometer 31 starts to gather the light intensity in reaction chamber 04, forms spectrum.When grating is closed, spectrometer 31 stops gathering the light intensity in reaction chamber 04, does not have Spectrum Formation, when grating is opened again, continuing to gather the light intensity in reaction chamber 04, so spectrum is only just formed when grating is opened, not forming spectrum when closing.
In the plasma etching system that the embodiment of the present invention provides, radio frequency source 02 and end-point detecting system 03 are connected in parallel between pulse signal generator 01 and reaction chamber 04.By the spectrometer 31 in pulse signal generator 01 Synchronization Control radio frequency source 02 and end-point detecting system 03.When the signal that pulse signal generator 01 produces is high level signal, this high level signal can trigger the unlatching of radio frequency source 01 and spectrometer 31 grating simultaneously, thus while making radio frequency source 01 export radio-frequency power, this high level signal controls spectrometer 31 grating and opens, thus makes spectrometer 31 gather light intensity in reaction chamber 04.
Particularly, within a pulse period, when pulse signal generator 01 is in the generation high level signal time period, its high level signal exported is divided into two-way, one tunnel is sent to radio frequency source 02, control radio frequency source 02 and open output radio-frequency power, this radio-frequency power impels the material in reaction chamber 04 to produce plasma, carries out plasma etching to the substrate to be etched be placed in reaction chamber 04.Meanwhile, the high level signal produced by pulse signal generator 01 is sent to end-point detecting system 04, and spectrometer 31 grating controlled on this end-point detecting system 04 is opened, and the light intensity in spectrometer 31 pairs of reaction chambers 04 is gathered, and forms spectrum.When pulse signal generator 01 is in the generation low level signal time period, now, low level signal cannot trigger the unlatching of radio frequency source 02 and opening of spectrometer 31 grating, thus in reaction chamber 03, also just cannot produce plasma and then cannot plasma etching be carried out, simultaneously, the low level signal exported by pulse signal generator 01 can not control spectrometer 31 grating and open, and thus spectrometer 31 also would not gather the light intensity in reaction chamber 04.
When only having the pulse signal produced when pulse signal generator to enter the generation high level signal time period in next pulse cycle, radio frequency source 02 just can be turned on again and export radio-frequency power, carries out the plasma etching of next cycle in reaction chamber 04.Meanwhile, high level signal controls spectrometer 31 grating and opens the light intensity gathered in reaction chamber.When pulse signal generator 01 is in the generation low level signal time period again, radio frequency source 02 stops power stage, in reaction chamber 04, do not produce plasma, and then plasma etching is carried out in reaction chamber 04, meanwhile, spectrometer 31 grating is closed, and stops gathering the light intensity in reaction chamber.Adopt and use the same method, within continuous print multiple pulse period, repeatedly perform above-mentioned steps.
Due to spectrometer 31 grating in reaction chamber 04, only have plasma generation, carry out plasma etching time just open, carry out the intensity collection in reaction chamber, the time period when time period that such spectrometer 31 gathers light intensity is plasma generation, namely high level time section.Owing to there being the plasma generation light intensity that thus spectrometer 31 detects to be continuous print in high level time section, instead of pulse feature.Thus, by end point determination that above-mentioned plasma etching system can realize multifrequency or double-frequency pulse plasma etch process by the change of the light intensity in reaction chamber.
Meanwhile, because the switch of radio frequency source 02 and spectrometer 31 grating is controlled by same pulse signal generator, achieve the synchronous of radio frequency source 02 and spectrometer 31 grating switch.Thus also just overcome the problem of the spectral period vibration caused because radio frequency source is asynchronous with spectrometer 31 switch, and then the end point determination making plasma etch process more accurately and reliably.
Above-mentioned plasma etching system is adopted to carry out the end-point detection method of plasma etch process as follows:
Pulse signal generator 01 produces pulse signal, and this pulse signal is divided into two-way, and a road is sent to the opening and closing that radio frequency source 02 controls radio frequency source 02, and whether the opening and closing of radio frequency source decide the generation of the plasma in reaction chamber 04; The spectrometer 31 that another road is sent to end-point detecting system 03 controls the switch of spectrometer grating, when spectrometer grating is opened, light intensity in spectrometer collection reaction chamber 04, form spectrum, the spectrum that spectrometer is formed is sent on end point determination computer 32, and end point determination calculator 32 determines plasma etch process terminal by the change of the intensity comparing spectrally a certain or some the specific wavelength light in different time sections.
Be used for determining that the specific wavelength light of plasma etch process terminal can be the light that the atom that is excited in gas glow discharge or molecule send.When the intensity of this light declines, illustrate, plasma etch process terminates, and reaches terminal.Utilize the light sent by the atom that is excited in gas glow discharge or molecule to determine etching technics terminal adopts emission spectrum.It should be noted that, the end-point detecting system described in the embodiment of the present invention can utilize plasma emlssion spectrometry to detect.As detected by the characteristic spectral line of the light of a certain or some specific wavelength in the process producing plasma, the light of the specific wavelength that the reacting gas of described specific wavelength only in plasma etch process or byproduct of reaction produce.In addition, the end-point detecting system described in the embodiment of the present invention can also utilize plasma absorption spectroscopic methodology to detect, the light of the specific wavelength that the reacting gas of described specific wavelength only in plasma etch process or byproduct of reaction produce.Characteristic spectral line as the light of the specific wavelength according to a certain atom consumed in plasma etch process process or free radical detects.
This plasma etching system is utilized to carry out the end point determination of plasma etch process, because radio frequency source 02 and spectrometer 31 are connected in parallel between pulse signal generator 01 and reaction chamber 04, so, the pulse signal produced by pulse signal generator 01 can trigger radio frequency source 02 simultaneously and spectrometer 31 works, thus also just achieve the synchronous of plasma etch process and end point determination process, thus etching terminal can be detected exactly.
In plasma etching system described above, within the pulse period produced by pulse signal generator 01, the grating of spectrometer 31 just once opens and closes.Now, when the pulse frequency of the signal produced is lower, the switching speed of grating can get caught up in the switch of the pulse signal that pulse signal generator 01 sends.But, when pulse frequency is higher, time such as higher than 500Hz, the switching speed of spectrometer 31 grating cannot catch up with the frequency of the pulse signal that pulse signal generator 01 sends, and now still can there is the switch of spectrometer 31 grating and the nonsynchronous problem of pulse signal of radio frequency source 02.For this reason, as shown in Figure 3, a pulse counter 05 can be set up between pulse signal generator 01 and end-point detecting system 04.The number of pulses that this pulse counter 05 transmits for accumulated pulse signal generator 01, and this pulse counter 05 is for controlling the switch of spectrometer 31 grating in end-point detecting system 04.After the umber of pulse that pulse counter 05 is accumulative reaches predetermined value, trigger spectrometer 31 grating and open, when next low level signal produces, trigger spectrometer 31 grating and close.Described pulse counter 05 is when receiving high level signal, and umber of pulse is accumulative adds 1, and when receiving end level signal, umber of pulse does not add up.
It should be noted that, described predetermined value be not less than 2 integer.Can be such as 5,10 etc.The size of this predetermined value can be determined jointly according to the pulse frequency in the switching speed of grating and pulse radiation frequency source.After reaching predetermined value by the umber of pulse that pulse counter 05 is accumulative, just trigger opening of spectrometer 31 grating, grating can be made like this to have time enough to complete opening and closing operation, improve synchronous accuracy, also achieve the gate-controlled switch of grating with pulse signal simultaneously.
In order to realize the synchronous of radio frequency source and spectrometer 31 grating switch in plasma etching system described in above-described embodiment, adopt the method by same pulse signal generator Synchronization Control radio frequency source and spectrometer 31 grating switch.Except this execution mode, other execution modes can also be adopted to realize.As radio frequency source and spectrometer 31 grating adopt different pulse signal generators to control respectively, as radio frequency source is controlled by the first pulse signal generator, spectrometer 31 grating is controlled by the second pulse signal generator.Wherein, the pulse signal that the first pulse signal generator and the second pulse signal generator produce is identical pulse signal, and this two pulse signal generator can synchronous working.
In addition, the radio frequency source in plasma etching system described above can be one, also can be multiple.Described radio frequency source can be the common radio frequency source exporting radio-frequency power continuously, also can be pulse radiation frequency source.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (7)
1. a plasma etching system, it is characterized in that, comprise, radio frequency source, end-point detecting system and reaction chamber, described end-point detecting system comprises spectrometer, and described spectrometer comprises grating, wherein, described radio frequency source is connected with described reaction chamber respectively with described spectrometer, and described radio frequency source and described spectrometer are connected in parallel; Described radio frequency source is controlled by the first pulse signal, and the switch of described spectrometer grating is controlled by the second pulse signal, described first pulse signal and described second pulse signal synchronous.
2. etching system according to claim 1, it is characterized in that, described first pulse signal and described second pulse signal are for be produced by same pulse signal generator, and described radio frequency source and described spectrometer are connected in parallel between described pulse signal generator and described reaction chamber.
3. etching system according to claim 2, it is characterized in that, also comprise, pulse counter between described pulse signal generator and described spectrometer, described pulse counter is used for the quantity of accumulative described pulse, after the quantity of described pulse reaches predetermined value, control the switch of described spectrometer grating.
4. etching system according to claim 3, is characterized in that, described predetermined value is 5.
5. the etching system according to any one of claim 1-4, is characterized in that, described radio frequency source is multiple.
6. the etching system according to any one of claim 1-4, is characterized in that, described end-point detecting system utilizes the emission spectrum of special wavelength light to detect; The light of the specific wavelength that the reacting gas of described specific wavelength only in plasma etch process or byproduct of reaction produce.
7. the etching system according to any one of claim 1-4, is characterized in that, described end-point detecting system utilizes the absorption spectrum of special wavelength light to detect; The light of the specific wavelength that the reacting gas of described specific wavelength only in plasma etch process or byproduct of reaction produce.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310718975.3A CN104733277B (en) | 2013-12-23 | 2013-12-23 | Plasma etching system |
| TW103142658A TWI544839B (en) | 2013-12-23 | 2014-12-08 | Plasma etching system |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310718975.3A CN104733277B (en) | 2013-12-23 | 2013-12-23 | Plasma etching system |
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| CN104733277A true CN104733277A (en) | 2015-06-24 |
| CN104733277B CN104733277B (en) | 2017-03-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733279A (en) * | 2013-12-23 | 2015-06-24 | 中微半导体设备(上海)有限公司 | Plasma etching system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP3157605B2 (en) * | 1992-04-28 | 2001-04-16 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US6902646B2 (en) * | 2003-08-14 | 2005-06-07 | Advanced Energy Industries, Inc. | Sensor array for measuring plasma characteristics in plasma processing environments |
| US7127358B2 (en) * | 2004-03-30 | 2006-10-24 | Tokyo Electron Limited | Method and system for run-to-run control |
| US7476849B2 (en) * | 2006-03-10 | 2009-01-13 | Varian Semiconductor Equipment Associates, Inc. | Technique for monitoring and controlling a plasma process |
| CN104733279B (en) * | 2013-12-23 | 2017-02-15 | 中微半导体设备(上海)有限公司 | Plasma etching system |
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- 2013-12-23 CN CN201310718975.3A patent/CN104733277B/en active Active
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104733279A (en) * | 2013-12-23 | 2015-06-24 | 中微半导体设备(上海)有限公司 | Plasma etching system |
| CN104733279B (en) * | 2013-12-23 | 2017-02-15 | 中微半导体设备(上海)有限公司 | Plasma etching system |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI544839B (en) | 2016-08-01 |
| CN104733277B (en) | 2017-03-08 |
| TW201531169A (en) | 2015-08-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |