CN104730621A - Optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nanostructure and manufacturing method thereof - Google Patents
Optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nanostructure and manufacturing method thereof Download PDFInfo
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- CN104730621A CN104730621A CN201510097954.3A CN201510097954A CN104730621A CN 104730621 A CN104730621 A CN 104730621A CN 201510097954 A CN201510097954 A CN 201510097954A CN 104730621 A CN104730621 A CN 104730621A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/1215—Splitter
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Abstract
The invention relates to an optical waveguide beam splitter based on a metal-dielectric layer-semiconductor composite nanostructure and a manufacturing method thereof and belongs to the technical field of optical integrated devices. The optical waveguide beam splitter is designed within the micro/nano scale range for the first time by means of the optical coupling between metal materials and semiconductor materials. The optical waveguide beam splitter based on the metal-dielectric layer-semiconductor composite nanostructure comprises a semiconductor layer, a dielectric layer and a nano metal particle layer, wherein the dielectric layer is located between the semiconductor layer and the nano metal particle layer, the semiconductor layer is nanoribbon which is made of the semiconductor materials such as CdS, the dielectric layer is a high-electrical-resistivity material layer made of HfO2 and the like, the nano metal particle layer is a nanoparticle layer made of precious metal such as Au, and nano metal particles are attached to the dielectric layer periodically in an array structure mode. The optical waveguide beam splitter based on the metal-dielectric layer-semiconductor composite nanostructure has great significance in obtaining of nanoscale optical integrated devices and multi-beam interference.
Description
Technical field
The present invention relates to a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure and preparation method thereof, belong to optical integrated device technical field.
Background technology
Based on the optical device of One, Dimensional Semiconductor Nano Materials, the fluorescence excellent due to it and waveguide properties are by investigation and application widely, but in current technology of preparing, One, Dimensional Semiconductor Nano Materials for single synthesis is only equivalent to single pass optical microcavity, is unfavorable for the design of small-sized micro-nano optical integrated device.Metal nano material is studied widely due to the optical coupled characteristic of its uniqueness and good light confinement.But due to the larger ohmic loss that it is intrinsic, the luminous energy propagation distance based on metal nano material only has several microns or tens microns, is unfavorable for that optics is integrated equally.
The fluorescence that can One, Dimensional Semiconductor Nano Materials be utilized well excellent in conjunction with the composite nanostructure device of One, Dimensional Semiconductor Nano Materials and metal nano material and the optical characteristics of waveguide properties and metal nano material uniqueness, single nanobelt realizes the design of optical waveguide beam splitter, has very important meaning in optical integrated device technical field.But in available data, yet there are no the report of the optical waveguide beam splitter of metal-dielectric layer-semiconductor composite nano structure.
Summary of the invention
The present invention is directed to the weak point that prior art exists, a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure and preparation method thereof is provided.
The present invention is a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, and comprise semiconductor layer, dielectric layer, nano-metal particle layer, described dielectric layer is between semiconductor layer and nano-metal particle layer; Described nano-metal particle layer by array of discs structure distribution on the dielectric layer; The thickness of described semiconductor layer is 10-120nm; The thickness of dielectric layer is 5-20nm.
The present invention is a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, and described semiconductor layer is CdS semiconductor nano-strip.
The present invention is a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, and the thickness of CdS semiconductor nano-strip is 10-120nm, is preferably 20-110nm; In actual applications the width of CdS semiconductor nano-strip and length are not particularly limited.
The present invention is a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, and dielectric layer is layer of high resistivity material; Be preferably as HfO
2layer.
The present invention is a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, described HfO
2the thickness of layer is 5-20nm, is preferably 5-15nm.
The present invention is a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, and described nano-metal particle layer is the precious metal nano-particle layers such as Au; In described metal nano-particle layer, single nano particle is cylindric, its diameter d, thickness h and nano-grain array period p adjustable according to the difference of Waveguide wavelength.
Described diameter d is 250-350nm, and be preferably 300nm, the distance of center circle (period p) of adjacent metal nano particle is 550-650nm, and be preferably 600nm, thickness h is 30-100nm, is preferably 50nm.
The present invention is a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, and the quantity of beam splitter final outgoing luminous point can by the row of metal nanoparticle and the metal nanoparticle nearest from the semiconductor layer end distance adjustment to semiconductor layer end.
The present invention is a kind of preparation method of the optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, comprises the steps:
Step one
With chemical vapour deposition technique preparation, thickness is the semiconductor nano-strip of 10-120nm;
Step 2
The semiconductor nano-strip that step one is obtained is dispersed in clean clean Si/SiO
2on substrate, on the semiconductor nano-strip of dispersion, cover the dielectric layer that a layer thickness is 5-20nm with atomic layer deposition method;
Step 3
One deck precursor film is applied with on the semiconductor nano-strip of dielectric layer at step 2 gained, then on the desired location of precursor film, obtain by electron beam lithography the nanometer circle hole array structure setting size, at least one of described precursor during to be selected from polymethylmethacrylate, methyl methacrylate a kind of;
Step 4
On the semiconductor nano-strip of step 3 gained with the nanometer circle hole array structure of setting size, the metal film of evaporation one deck setting thickness, peels off unnecessary metal film and namely obtains described optical waveguide beam splitter together with precursor film.
The present invention is a kind of preparation method of the optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, when metal be Au, dielectric layer is HfO
2, semiconductor is when being CdS, comprise the steps:
Step one
With purity be the CdS powder of 99.9% for raw material, with the protection such as Ar gas gas for carrier gas, preparing thickness with chemical vapour deposition technique is 10-120nm, is preferably the CdS nanobelt of 20-110nm; During deposition, control gas flow rate is 1.5-5sccm, and depositing temperature is 800-860 DEG C;
Step 2
With HfO
2for raw material, the semiconductor nano-strip that step one is obtained is dispersed in clean clean Si/SiO
2on substrate, on the semiconductor nano-strip of dispersion, covering a layer thickness with atomic layer deposition method is 5-20nm, is preferably the HfO of 5-15nm
2layer;
Step 3
One deck precursor film is applied with on the semiconductor nano-strip of dielectric layer at step 2 gained, then on the desired location of precursor film, obtain by electron beam lithography the nanometer circle hole array structure setting size, described precursor is selected from the one in polymethylmethacrylate, methyl methacrylate; In the array structure of described nanometer circle hole, the diameter in circle hole is 280-320nm, the cycle is 580-620nm;
Step 4
On the semiconductor nano-strip of step 3 gained with the nanometer circle hole array structure of setting size, evaporation a layer thickness is the metal film of 40-60nm, unnecessary metal film is peeled off together with precursor film and namely obtains described optical waveguide beam splitter, its diameter d of single Au nano particle is 250-350nm, be preferably 300nm, the distance of center circle (period p) of adjacent metal nano particle is 550-650nm, be preferably 600nm, thickness h is 30-100nm, is preferably 50nm.
The present invention is a kind of preparation method of the optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, and step one gained CdS nanobelt is the CdS nanobelt of high crystalline quality, regular appearance.
The present invention is a kind of preparation method of the optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, prepared optical waveguide beam splitter, at room temperature, with the Ar ion laser of 488nm wavelength by coupling fiber in optical microscope for scanning near field (SNOM), be the CdS nanobelt of the composite nanostructure that under the object lens of 100, local excition has been prepared in enlargement factor, the Waveguide of its original position 510nm wavelength fluorescent and end outgoing is observed by visible CCD.
Principle and advantage
Optical waveguide beam splitter designed by the present invention, semiconductor nano-strip is utilized to can be used as the character in the active waveguide chamber of high index of refraction, fluorescence is produced by laser excitation nanobelt, in the process that its fluorescence is propagated in nanobelt with nanobelt above diameter be that the Au nanometer disk of 300nm intercouples and makes Au nanometer disc surfaces charge polarization, produce local surface phasmon.Due to the intrinsic inherent loss of local surface phasmon, Waveguide below Au nanometer disk is weakened, do not have the Waveguide below Au nanometer disk then can continue forward direction in the clear, thus the Waveguide in nanobelt is equivalent to propagate along the gap between Au nanometer disk, is namely semiperiod---the channels spread of 300nm of Au nanometer array of discs along width.This width value, close to half-wavelength---the 510nm/2 of fluorescence under CdS nanobelt room temperature, belongs to sub-wavelength dimensions, is more conducive to the optical device of integrated small scale, but less channel width then can cause the loss of fluorescence communication process too large, is unfavorable for the propagation of light.Au nanometer disk can prevent metal from directly contacting with semiconductor with the dielectric layer in the middle of semiconductor nano-strip and produce fluorescent quenching, makes the distance that waveguide propagate light energy is longer.Therefore for single composite structure, Waveguide in nanobelt is along multiple sub-wavelength channels spread, when light wave propagation causes the position not having Au nanometer disk, due to effect while the diffraction of optics and interference, the emergent light of nanobelt end is with the form outgoing of multiple luminous point, be similar to multiple-beam interference, the number of outgoing luminous point can by the distance adjustment of the Au nano particle nearest from semiconductor layer end to semiconductor layer end.In addition the pattern of the metal level of the optical waveguide beam splitter of this structure and dimensional parameters can regulate according to the change of semiconductor nano carrying material or Waveguide wavelength.Optical waveguide beam splitter of the present invention has structural design flexibly as can be seen here, can realize based on advantages such as the optical waveguide beam splitting of single nanobelt and the multiple-beam interferences of sub-wavelength dimensions, significant in optical integrated device technical field.
Accompanying drawing illustrates:
The SEM picture of the optical waveguide beam splitter of accompanying drawing 1 designed by the present invention;
The AFM figure of accompanying drawing 2a optical waveguide beam splitter prepared by embodiment 1;
Accompanying drawing 2b is along white dashed line in accompanying drawing 2a, the distribution plan of measured optical waveguide beam splitter thickness
Accompanying drawing 3 is optical waveguide electric-field intensity distribution figure in the device based on finite element method for simulating;
The details in a play not acted out on stage, but told through dialogues scattering picture of the representational optical waveguide beam splitter of the wide photograph of tungsten lamp one under accompanying drawing 4.a. optical microscope;
Accompanying drawing 4b. under SNOM, with the details in a play not acted out on stage, but told through dialogues optical waveguide photo of this device of laser local excition of 488nm wavelength; Illustration on the right side of accompanying drawing 4b is the enlarged drawing of the emergent light image of corresponding beam splitter end;
The experimental result picture that the spot number of accompanying drawing 5. nanobelt end outgoing changes along with Au nanometer array of discs row and changes;
Wherein
Accompanying drawing 5a is Au nanometer array of discs row when being 2, the SEM figure of optical waveguide beam splitter, and its engineer's scale is 2 μm; Accompanying drawing 5b is Au nanometer array of discs row when being 2, and under SNOM, with the details in a play not acted out on stage, but told through dialogues optical waveguide photo of the corresponding device of laser local excition of 488nm wavelength, its engineer's scale is 2 μm;
Illustration on the right side of accompanying drawing 5b is the enlarged drawing of the emergent light image of corresponding beam splitter end;
Accompanying drawing 5c is Au nanometer array of discs row when being 3, the SEM figure of optical waveguide beam splitter, and its engineer's scale is 3 μm;
Accompanying drawing 5d is Au nanometer array of discs row when being 3, and under SNOM, with the details in a play not acted out on stage, but told through dialogues optical waveguide photo of the corresponding device of laser local excition of 488nm wavelength, its engineer's scale is 3 μm;
Illustration on the right side of accompanying drawing 5d is the enlarged drawing of the emergent light image of corresponding beam splitter end;
Accompanying drawing 5e is Au nanometer array of discs row when being 4, the SEM figure of optical waveguide beam splitter, and its engineer's scale is 3 μm; Accompanying drawing 5f is Au nanometer array of discs row when being 4, and under SNOM, with the details in a play not acted out on stage, but told through dialogues optical waveguide photo of the corresponding device of laser local excition of 488nm wavelength, its engineer's scale is 3 μm; Illustration on the right side of accompanying drawing 5f is the enlarged drawing of the emergent light image of corresponding beam splitter end;
Accompanying drawing 5g-i is optical waveguide electric-field intensity distribution figure in the nanobelt corresponding with experiment fabricate devices based on finite element method for simulating;
The experimental result picture that the spot number of the nanobelt end outgoing of the Au nanometer array of discs of the identical row of accompanying drawing 6. changes along with multiple-beam interference distance and changes;
Wherein
Fig. 6 a is SEM figure (Au nanometer array of discs is 1.5 μm to the distance of semiconductor layer end) of the optical waveguide beam splitter end of 3 row Au nanometer array of discs, and its engineer's scale is 3 μm; The optical waveguide beam splitter of Fig. 6 b corresponding to Fig. 6 a is under SNOM, with the details in a play not acted out on stage, but told through dialogues optical waveguide photo (engineer's scale is 3 μm) of the corresponding device of laser local excition of 488nm wavelength, illustration is the enlarged drawing of the emergent light image of corresponding optical waveguide beam splitter end;
Fig. 6 c is SEM figure (Au nanometer array of discs is 2.2 μm to the distance of semiconductor layer end) of the optical waveguide beam splitter end of 3 row Au nanometer array of discs, and its engineer's scale is 3 μm; The optical waveguide beam splitter of Fig. 6 d corresponding to Fig. 6 c is under SNOM, with the details in a play not acted out on stage, but told through dialogues optical waveguide photo (engineer's scale is 3 μm) of the corresponding device of laser local excition of 488nm wavelength, illustration is the enlarged drawing of the emergent light image of corresponding optical waveguide beam splitter end;
Fig. 6 e is SEM figure (Au nanometer array of discs is 4.2 μm to the distance of semiconductor layer end) of the optical waveguide beam splitter end of 3 row Au nanometer array of discs, and its engineer's scale is 3 μm; The optical waveguide beam splitter of Fig. 6 f corresponding to Fig. 6 e is under SNOM, with the details in a play not acted out on stage, but told through dialogues optical waveguide photo (engineer's scale is 3 μm) of the corresponding device of laser local excition of 488nm wavelength, illustration is the enlarged drawing of the emergent light image of corresponding optical waveguide beam splitter end.
The structure of the optical waveguide beam splitter as can be seen from Figure 1 designed by the present invention.
The structural parameters of the optical waveguide beam splitter as can be seen from Figure 2 prepared and the structural parameters of design basically identical.
This CdS nanobelt-HfO as can be seen from Figure 3
2the optical waveguide mark function of dielectric layer-Au nanometer array of discs composite nanostructure, namely this for this composite nanostructure, the propagation of light in single nanobelt is equivalent to multi-beam and propagates in multichannel optical microcavity.
Composition graphs 4a, Fig. 4 b can find out that the optical waveguide beam splitter prepared by parameter value of experimentally foundation Theoretical Design really can realize optical waveguide and divide beam function.
Composition graphs 5a, Fig. 5 b, Fig. 5 c, Fig. 5 d, Fig. 5 e, Fig. 5 f can find out that the spot number of nanobelt end outgoing can be regulated and controled by tune Au nanometer array of discs row, composition graphs 5g, Fig. 5 h, Fig. 5 i when light is transmitted to there is no a position of Au nanometer array of discs time, due to the restriction without Au nanometer array of discs, can interfere between multiple beam.
Composition graphs 6a, Fig. 6 b, Fig. 6 c, Fig. 6 d, Fig. 6 e, Fig. 6 f can find out: for the Au nanometer array of discs of identical row, and the spot number of nanobelt end outgoing can also be regulated and controled by the interference distance between multiple beam.
Embodiment
Now the invention will be further described by reference to the accompanying drawings:
Embodiment 1
Step one
With the CdS nanobelt that chemical gas phase synthetic method (CVD) prepares high crystalline quality, the thickness of regular appearance is about 100nm, raw materials used is business high-purity (99.9%) CdS powder, with high-purity (98%) H
2gas is carrier gas, and flow velocity is 2sccm, and depositing temperature is 810 DEG C.
Step 2
Obtained nanobelt is dispersed in and realizes clean clean Si/SiO
2(200nm), on substrate, on the CdS nanobelt of dispersion, the thick HfO of one deck 15nm is covered with atomic layer deposition method (ALD)
2dielectric layer.
Step 3
Again at coated HfO
2the CdS nanobelt of dielectric layer prepares by the method that electron beam exposure apparatus decomposes precursor (polymethylmethacrylate (PMMA), methyl methacrylate (MMA)) by the high-energy of electron beam the nanometer circle hole array structure that diameter is 300nm, the cycle is 600nm.
Step 4
Be evaporation source by vaporation-type vacuum coating equipment with Au, have the sample surfaces of nanometer circle hole array to plate the Au film that a layer thickness is 50nm in preparation, unnecessary Au film is peeled off together with precursor and namely prepares Au nanometer array of discs structure.
Gained CdS nanobelt-HfO
2the overall pattern of dielectric layer-Au nanometer array of discs composite nanostructure is as shown in the SEM sign of Fig. 1.The structural parameters that corresponding AFM picture (Fig. 2) shows to test the structural parameters of optical waveguide beam splitter of preparation and design are basically identical.Fig. 3 is optical waveguide electric-field intensity distribution figure in the device based on finite element method for simulating, and this CdS nanobelt-HfO can be described more intuitively
2the optical waveguide mark function of dielectric layer-Au nanometer array of discs composite nanostructure, namely this for this composite nanostructure, the propagation of light in single nanobelt is equivalent to multi-beam and propagates in multichannel optical microcavity, when light is transmitted to the position not having Au nanometer array of discs, due to the restriction without Au nanometer array of discs, can interfere between multiple beam.Fig. 4 a is the details in a play not acted out on stage, but told through dialogues scattering picture with the wide photograph of a tungsten lamp representational optical waveguide beam splitter under optical microscope, Fig. 4 b is under SNOM, with the details in a play not acted out on stage, but told through dialogues optical waveguide photo of this device of laser local excition of 488nm wavelength, illustration is the enlarged drawing of nanobelt end emergent light picture, can clearly see relative to independent CdS nanobelt, having there is branch phenomenon in the emergent light of the nanobelt end in this composite structure, illustrates that this structure has light beam splitting effect really.Fig. 5 a-f is the experimental result picture that the spot number of nanobelt end outgoing changes along with Au nanometer array of discs row, by the Au nanometer array of discs row of this composite structure successively according to 2, 3, 4 change the spot number proving the outgoing of nanobelt end can be regulated and controled by tune Au nanometer array of discs row, Fig. 5 g-i is optical waveguide electric-field intensity distribution figure in the device based on the corresponding size of finite element method for simulating, find to conform to experimental result, and can see that multiple beam will produce interference when propagating and causing and do not have the position of Au nanometer array of discs clearly, and different distances can produce different interference.Fig. 6 is the experimental result picture that the spot number of the nanobelt end outgoing of the Au nanometer array of discs of identical row changes along with multiple-beam interference distance, the multiple-beam interference distance of the sample of Three Represents is respectively 1.5 μm, 2.2 μm, 4.2 μm, the spot number of nanobelt end outgoing is also different, Au nanometer array of discs for identical row is described, the spot number of nanobelt end outgoing can also be regulated and controled by the interference distance between multiple beam.
Claims (8)
1. based on an optical waveguide beam splitter for metal-dielectric layer-semiconductor composite nano structure, it is characterized in that: comprise semiconductor layer, dielectric layer, nano-metal particle layer, described dielectric layer is between semiconductor layer and nano-metal particle layer; Described nano-metal particle layer by array of discs structure distribution on the dielectric layer; The thickness of described semiconductor layer is 10-120nm; The thickness of dielectric layer is 5-20nm.
2. a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure according to claim 1, is characterized in that: described semiconductor layer is CdS semiconductor nano-strip.
3. a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure according to claim 2, is characterized in that: the thickness of CdS semiconductor nano-strip is 20-110nm.
4. a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure according to claim 1, is characterized in that: dielectric layer is HfO
2layer.
5. a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure according to claim 4, is characterized in that: described HfO
2the thickness of layer is 5-15nm.
6. a kind of optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure according to claim 1, is characterized in that: described nano-metal particle layer is Au nano-particle layer; In described metal nano-particle layer, single nano particle is cylindric.
7. prepare the method based on the optical waveguide beam splitter of metal-dielectric layer-semiconductor composite nano structure as described in claim 1-6 any one, it is characterized in that comprising the steps:
Step one
With chemical vapour deposition technique preparation, thickness is the semiconductor nano-strip of 10-120nm;
Step 2
The semiconductor nano-strip that step one is obtained is dispersed in clean clean Si/SiO
2on substrate, on the semiconductor nano-strip of dispersion, cover the dielectric layer that a layer thickness is 5-20nm with atomic layer deposition method;
Step 3
One deck precursor film is applied with on the semiconductor nano-strip of dielectric layer at step 2 gained, then on the desired location of precursor film, obtain by electron beam lithography the nanometer circle hole array structure setting size, described precursor is selected from least one in polymethylmethacrylate, methyl methacrylate;
Step 4
On the semiconductor nano-strip of step 3 gained with the nanometer circle hole array structure of setting size, the metal film of evaporation one deck setting thickness, peels off unnecessary metal film and namely obtains described optical waveguide beam splitter together with precursor film.
8. a kind of method preparing optical waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure according to claim 7, is characterized in that comprising the steps:
Step one
With purity be the CdS powder of 99.9% for raw material, with Ar gas for carrier gas, prepare with chemical vapour deposition technique the CdS nanobelt that thickness is 20-110nm; During deposition, control gas flow rate is 1.5-5sccm, and depositing temperature is 800-860 DEG C
Step 2
With HfO
2for raw material, the semiconductor nano-strip that step one is obtained is dispersed in clean clean Si/SiO
2on substrate, on the semiconductor nano-strip of dispersion, cover the HfO that a layer thickness is 5-15nm with atomic layer deposition method
2layer;
Step 3
One deck precursor film is applied with on the semiconductor nano-strip of dielectric layer at step 2 gained, then on the desired location of precursor film, obtain by electron beam lithography the nanometer circle hole array structure setting size, described precursor is selected from least one in polymethylmethacrylate, methyl methacrylate; In the array structure of described nanometer circle hole, the diameter in circle hole is 280-320nm, the cycle is 580-620nm;
Step 4
On the semiconductor nano-strip of step 3 gained with the nanometer circle hole array structure of setting size, evaporation a layer thickness is the metal film of 40-60nm, is peeled off by unnecessary metal film and namely obtain described optical waveguide beam splitter together with precursor film.
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| US10976562B2 (en) | 2017-10-10 | 2021-04-13 | Kla Corporation | Nano-structured non-polarizing beamsplitter |
| US11757245B2 (en) | 2020-01-27 | 2023-09-12 | University Of Washington | Radiation-balanced fiber laser |
| US11913683B2 (en) | 2020-01-17 | 2024-02-27 | University Of Washington | Solid-state laser refrigeration of composite optomechanical resonators |
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| CN103278884A (en) * | 2013-03-20 | 2013-09-04 | 华中科技大学 | Surface plasmon polariton waveguide with metal-insulator-semiconductor (MIS) capacitor structure |
| CN104216046A (en) * | 2013-05-30 | 2014-12-17 | 台湾积体电路制造股份有限公司 | Waveguide structure and method for fabricating the same |
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| US10976562B2 (en) | 2017-10-10 | 2021-04-13 | Kla Corporation | Nano-structured non-polarizing beamsplitter |
| US11913683B2 (en) | 2020-01-17 | 2024-02-27 | University Of Washington | Solid-state laser refrigeration of composite optomechanical resonators |
| US11757245B2 (en) | 2020-01-27 | 2023-09-12 | University Of Washington | Radiation-balanced fiber laser |
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