CN104730621B - A kind of preparation method of the fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure - Google Patents
A kind of preparation method of the fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure Download PDFInfo
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- CN104730621B CN104730621B CN201510097954.3A CN201510097954A CN104730621B CN 104730621 B CN104730621 B CN 104730621B CN 201510097954 A CN201510097954 A CN 201510097954A CN 104730621 B CN104730621 B CN 104730621B
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/132—Integrated optical circuits characterised by the manufacturing method by deposition of thin films
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/1215—Splitter
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Abstract
The present invention relates to a kind of fiber waveguide beam splitter based on metal dielectric layer semiconductor composite nano structure and preparation method thereof, belong to optical integrated device technical field.The present invention devises a kind of fiber waveguide beam splitter using being optically coupled in the range of micro/nano-scale between metal material and semi-conducting material first.Fiber waveguide beam splitter designed by the present invention includes semiconductor layer, dielectric layer, nano-metal particle layer, and the dielectric layer is between semiconductor layer and nano-metal particle layer；The semiconductor layer is the semi-conducting material nanobelts such as CdS；The dielectric layer is HfO2Etc. layer of high resistivity material；The nano-metal particle layer is the precious metal nano-particle layers such as Au, and the nano-metal particle is adhered on the dielectric layer with periodic array arrangement.The present invention is for realizing that nano level optical integrated device and multiple-beam interference are of great significance.
Description
Technical field
The present invention relates to a kind of fiber waveguide beam splitter and its system based on metal-dielectric layer-semiconductor composite nano structure
Preparation Method, belongs to optical integrated device technical field.
Background technology
Optics based on One, Dimensional Semiconductor Nano Materials, since its excellent fluorescence and waveguide properties are extensive
Research and application, but in current technology of preparing, list is only equivalent to for the One, Dimensional Semiconductor Nano Materials of single synthesis
The optical microcavity of passage, is unfavorable for the design of small-sized micro-nano optical integrated device.Metal nano material is due to its unique optics
Coupled characteristic and good light confinement are widely studied.But due to its intrinsic larger ohmic loss, based on metal
The light energy propagation distance of nano material only has several microns or more than ten microns, is equally unfavorable for optics and integrates.
It can be utilized well with reference to the composite nanostructure device of One, Dimensional Semiconductor Nano Materials and metal nano material
The optical characteristics of the excellent fluorescence of One, Dimensional Semiconductor Nano Materials and waveguide properties and metal nano material uniqueness, single
The design of fiber waveguide beam splitter is realized on nanobelt, has very important meaning in optical integrated device technical field.But existing
It yet there are no the report of the fiber waveguide beam splitter of metal-dielectric layer-semiconductor composite nano structure in data.
The content of the invention
Part in view of the shortcomings of the prior art of the invention, there is provided one kind is received based on metal-dielectric layer-semiconductors coupling
Fiber waveguide beam splitter of rice structure and preparation method thereof.
The present invention is a kind of fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, including is partly led
Body layer, dielectric layer, nano-metal particle layer, the dielectric layer is between semiconductor layer and nano-metal particle layer；It is described to receive
Rice metal particle layer presses array of discs structure distribution on the dielectric layer；The thickness of the semiconductor layer is 10-120nm；Dielectric layer
Thickness be 5-20nm.
The present invention is a kind of fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, described partly to lead
Body layer is CdS semiconductor nano-strips.
The present invention is a kind of fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, and CdS is partly led
The thickness of body nanobelt is 10-120nm, is preferably 20-110nm；In practical applications to the width of CdS semiconductor nano-strips with
Length is not particularly limited.
The present invention is a kind of fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, and dielectric layer is
Layer of high resistivity material；Preferably it is HfO2Layer.
The present invention is a kind of fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, the HfO2
The thickness of layer is 5-20nm, is preferably 5-15nm.
The present invention is a kind of fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, the nanometer
Metal particle layer is the precious metal nano-particle layers such as Au；In the metal nano-particle layer, single nano particle is cylindrical,
Its diameter d, thickness h and nano-grain array period p are according to the different adjustable of waveguide optical wavelength.
The diameter d is 250-350nm, is preferably 300nm, and the distance of center circle (period p) of adjacent metal nano particle is
550-650nm, is preferably 600nm, thickness h 30-100nm, is preferably 50nm.
The present invention is a kind of fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, and beam splitter is most
The quantity of outgoing luminous point can be by the number of rows and the metal nanoparticle nearest from semiconductor layer end of metal nanoparticle to partly eventually
The distance of conductor layer end is adjusted.
The present invention is a kind of preparation side of the fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure
Method, comprises the following steps：
Step 1
Prepared with chemical vapour deposition technique, the semiconductor nano-strip that thickness is 10-120nm；
Step 2
Semiconductor nano-strip made from step 1 is dispersed in clean Si/SiO2On substrate, atomic layer deposition is used
Method covers the dielectric layer that a layer thickness is 5-20nm on scattered semiconductor nano-strip；
Step 3
One layer of precursor film is coated on the semiconductor nano band that dielectric layer is carried obtained by step 2, then passes through electron beam
The nanometer circular hole array structure that exposure technique is sized on the setting position of precursor film, the predecessor are selected from poly-
At least one of one kind in methyl methacrylate, methyl methacrylate；
Step 4
One layer of evaporation is set on the semiconductor nano band that the nanometer circular hole array structure being sized is carried obtained by step 3
Determine the metal film of thickness, unnecessary metal film is peeled off together with precursor film and obtains the fiber waveguide beam splitter.
The present invention is a kind of preparation side of the fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure
Method, when metal is Au, dielectric layer HfO2, semiconductor is when being CdS, comprise the following steps：
Step 1
The CdS powder for being 99.9% using purity protects gas to be prepared as carrier gas with chemical vapour deposition technique as raw material, using Ar gas etc.
Thickness is 10-120nm, is preferably the CdS nanobelts of 20-110nm；During deposition, it is 1.5-5sccm to control gas flow rate, deposition
Temperature is 800-860 DEG C；
Step 2
With HfO2For raw material, semiconductor nano-strip made from step 1 is dispersed in clean Si/SiO2On substrate,
It is 5-20nm to cover a layer thickness on scattered semiconductor nano-strip with atomic layer deposition method, is preferably the HfO of 5-15nm2
Layer；
Step 3
One layer of precursor film is coated on the semiconductor nano band that dielectric layer is carried obtained by step 2, then passes through electron beam
The nanometer circular hole array structure that exposure technique is sized on the setting position of precursor film, the predecessor are selected from poly-
One kind in methyl methacrylate, methyl methacrylate；In the nanometer circular hole array structure, a diameter of 280- of circular hole
320nm, cycle 580-620nm；
Step 4
A thickness is deposited on the semiconductor nano band that the nanometer circular hole array structure being sized is carried obtained by step 3
The metal film for 40-60nm is spent, unnecessary metal film is peeled off together with precursor film and obtains the fiber waveguide beam splitter,
Its diameter d of single Au nano particle is 250-350nm, preferably 300nm, the distance of center circle (cycle of adjacent metal nano particle
P) it is 550-650nm, is preferably 600nm, thickness h 30-100nm, is preferably 50nm.
The present invention is a kind of preparation side of the fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure
Method, CdS nanobelts obtained by step 1 are highly crystalline quality, the CdS nanobelts of regular appearance.
The present invention is a kind of preparation side of the fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure
Method, prepared fiber waveguide beam splitter, at room temperature, passes through fiber coupling to scanning with the Ar ion lasers of 488nm wavelength
In near-field optical microscope (SNOM), the composite nanostructure that has prepared of local excition in the case where amplification factor is 100 object lens
The Waveguide of CdS nanobelts, its original position 510nm wavelength fluorescent and end outgoing is observed by visible CCD.
Principle and advantage
Fiber waveguide beam splitter designed by the present invention, can be as the active waveguide chamber of high index of refraction by the use of semiconductor nano-strip
Property, by laser excitation nanobelt produce fluorescence, its fluorescence is propagated in nanobelt during with above nanobelt directly
Footpath intercouples for the Au nanometer disks of 300nm makes Au nanometers of disc surfaces charge polarizations, produces local surface phasmon.
Due to the intrinsic inherent loss of local surface phasmon so that the Waveguide below Au nanometers of disks weakens, and is received without Au
Waveguide below meter Yuan Pan can then continue to propagate forward in the clear, thus the Waveguide in nanobelt equivalent to along
Gap between Au nanometers of disks is propagated, i.e., the half period along width for Au nanometers of array of discs --- the passage of 300nm passes
Broadcast.This width value belongs to sub-wavelength dimensions, more conducively collects close to half-wavelength --- the 510nm/2 of CdS nanobelts fluorescence at room temperature
Into the optical device of small scale, but the channel width of smaller can then cause the loss of fluorescence communication process too big, be unfavorable for the propagation of light.
Dielectric layer among Au nanometers of disks and semiconductor nano-strip can prevent metal from directly being contacted with semiconductor and producing fluorescence and quench
Go out so that waveguide luminous energy propagates longer distance.Therefore for single composite construction, Waveguide in nanobelt is along more
A sub-wavelength passage is propagated, and when light wave propagation causes the position of no Au nanometers of disk, due to optical diffraction and is interfered same
Shi Zuoyong, the emergent light of nanometer strap end portion are emitted in the form of multiple luminous points, similar to multiple-beam interference, are emitted the number of luminous point
Can be by being adjusted with a distance from the Au nano particles nearest from semiconductor layer end to semiconductor layer end.In addition the fiber waveguide of the structure
The pattern and dimensional parameters of the metal layer of beam splitter can be adjusted according to the change of semiconductor nano carrying material or waveguide optical wavelength
Section.Fiber waveguide beam splitter of the invention has structure design flexibly, it can be achieved that the fiber waveguide based on single nanobelt as can be seen here
The advantages such as the multiple-beam interference of beam splitting and sub-wavelength dimensions, it is significant in optical integrated device technical field.
Brief description of the drawings：
Attached drawing 1 is the SEM pictures of the fiber waveguide beam splitter designed by the present invention；
Attached drawing 2a is that the AFM of fiber waveguide beam splitter prepared by embodiment 1 schemes；
Attached drawing 2b is white dashed line, the distribution map of measured fiber waveguide beam splitter thickness along attached drawing 2a
Attached drawing 3 is fiber waveguide electric-field intensity distribution figure in the device based on finite element method for simulating；
The wide details in a play not acted out on stage, but told through dialogues scattering picture according to a representational fiber waveguide beam splitter of tungsten lamp under attached drawing 4.a. light microscopes；
Attached drawing 4b. is under SNOM, with the details in a play not acted out on stage, but told through dialogues fiber waveguide photo of the laser local excition of the 488nm wavelength device；Attached drawing
Illustration on the right side of 4b is the enlarged drawing of the outgoing light image of corresponding beam splitter end；
The experiment knot that the spot number of 5. nanometers of strap end portion outgoing of attached drawing changes as Au nanometers of array of discs numbers of rows change
Fruit is schemed；
Wherein
Attached drawing 5a is Au nanometers of array of discs numbers of rows when being 2, and the SEM figures of fiber waveguide beam splitter, its engineer's scale is 2 μm；It is attached
Fig. 5 b are Au nanometers of array of discs numbers of rows when being 2, under SNOM, with the corresponding device of laser local excition of 488nm wavelength
Details in a play not acted out on stage, but told through dialogues fiber waveguide photo, its engineer's scale are 2 μm；
Illustration on the right side of attached drawing 5b is the enlarged drawing of the outgoing light image of corresponding beam splitter end；
Attached drawing 5c is Au nanometers of array of discs numbers of rows when being 3, and the SEM figures of fiber waveguide beam splitter, its engineer's scale is 3 μm；
Attached drawing 5d is Au nanometers of array of discs numbers of rows when being 3, under SNOM, with the laser local excition phase of 488nm wavelength
The details in a play not acted out on stage, but told through dialogues fiber waveguide photo for the device answered, its engineer's scale are 3 μm；
Illustration on the right side of attached drawing 5d is the enlarged drawing of the outgoing light image of corresponding beam splitter end；
Attached drawing 5e is Au nanometers of array of discs numbers of rows when being 4, and the SEM figures of fiber waveguide beam splitter, its engineer's scale is 3 μm；It is attached
Fig. 5 f are Au nanometers of array of discs numbers of rows when being 4, under SNOM, with the corresponding device of laser local excition of 488nm wavelength
Details in a play not acted out on stage, but told through dialogues fiber waveguide photo, its engineer's scale are 3 μm；Illustration on the right side of attached drawing 5f is the outgoing light image of corresponding beam splitter end
Enlarged drawing；
Attached drawing 5g-i is to prepare fiber waveguide electric field in the corresponding nanobelt of device based on finite element method for simulating and experiment
Intensity distribution；
The spot number of the nanometer strap end portion outgoing of the Au nanometer array of discs of 6. identical number of rows of attached drawing is with multiple-beam interference
The experimental result picture that distance changes and changes；
Wherein
Fig. 6 a are that the SEM of the fiber waveguide beam splitter end of Au nanometer array of discs of 3 row schemes that (Au nanometers of array of discs are to partly leading
The distance of body layer end is 1.5 μm), its engineer's scale is 3 μm；Fig. 6 b be Fig. 6 a corresponding to fiber waveguide beam splitter under SNO M,
With the details in a play not acted out on stage, but told through dialogues fiber waveguide photo (engineer's scale is 3 μm) of the corresponding device of laser local excition of 488nm wavelength, illustration is corresponding
The enlarged drawing of the outgoing light image of fiber waveguide beam splitter end；
Fig. 6 c are that the SEM of the fiber waveguide beam splitter end of Au nanometer array of discs of 3 row schemes that (Au nanometers of array of discs are to partly leading
The distance of body layer end is 2.2 μm), its engineer's scale is 3 μm；Fig. 6 d be Fig. 6 c corresponding to fiber waveguide beam splitter under SNO M,
With the details in a play not acted out on stage, but told through dialogues fiber waveguide photo (engineer's scale is 3 μm) of the corresponding device of laser local excition of 488nm wavelength, illustration is corresponding
The enlarged drawing of the outgoing light image of fiber waveguide beam splitter end；
Fig. 6 e are that the SEM of the fiber waveguide beam splitter end of Au nanometer array of discs of 3 row schemes that (Au nanometers of array of discs are to partly leading
The distance of body layer end is 4.2 μm), its engineer's scale is 3 μm；Fig. 6 f be Fig. 6 e corresponding to fiber waveguide beam splitter under SNO M,
With the details in a play not acted out on stage, but told through dialogues fiber waveguide photo (engineer's scale is 3 μm) of the corresponding device of laser local excition of 488nm wavelength, illustration is corresponding
The enlarged drawing of the outgoing light image of fiber waveguide beam splitter end.
As can be seen from Figure 1 the structure of the fiber waveguide beam splitter designed by the present invention.
As can be seen from Figure 2 the structural parameters of the fiber waveguide beam splitter prepared and the structural parameters designed are basically identical.
This CdS nanobelts-HfO as can be seen from Figure 32The light of-Au nanometers of array of discs composite nanostructures of dielectric layer
Waveguide fraction function, i.e., it is this to exist for this composite nanostructure, propagation of the light in single nanobelt equivalent to multi-beam
Propagated in the optical microcavity of multichannel.
Fiber waveguide beam splitter with reference to prepared by Fig. 4 a, Fig. 4 b can be seen that the experimentally parameter value of foundation Theoretical Design is true
It can realize fiber waveguide beam splitting function in fact.
It can be seen that the spot number that nanometer strap end portion is emitted can be by adjusting with reference to Fig. 5 a, Fig. 5 b, Fig. 5 c, Fig. 5 d, Fig. 5 e, Fig. 5 f
Au nanometers of array of discs number of rows regulation and control, with reference to Fig. 5 g, Fig. 5 h, Fig. 5 i when light propagation to the position of no Au nanometers of array of discs
When, due to the limitation without Au nanometers of array of discs, can be interfered between multiple beam.
It can be seen that with reference to Fig. 6 a, Fig. 6 b, Fig. 6 c, Fig. 6 d, Fig. 6 e, Fig. 6 f：For the Au nanometer disk battle arrays of identical number of rows
Row, the spot number of nanometer strap end portion outgoing can also be regulated and controled by the interference distance between multiple beam.
Embodiment
In conjunction with attached drawing, the invention will be further described：
Embodiment 1
Step 1
With the CdS nanometers that chemical gas phase synthetic method (CVD) prepares highly crystalline quality, the thickness of regular appearance is about 100nm
Band, raw materials used is high-purity (99.9%) the CdS powder of business, with high-purity (98%) H2Gas is carrier gas, and flow velocity 2sccm, deposits
Temperature is 810 DEG C.
Step 2
Obtained nanobelt is dispersed in and realizes clean Si/SiO2On (200nm) substrate, atomic layer deposition method is used
(ALD) one layer of 15nm thickness HfO is covered on scattered CdS nanobelts2Dielectric layer.
Step 3
Coating HfO again2The high-energy point for passing through electron beam with electron beam exposure apparatus on the CdS nanobelts of dielectric layer
The method of solution predecessor (polymethyl methacrylate (PMMA), methyl methacrylate (MMA)) prepares a diameter of 300nm, week
Phase is the nanometer circular hole array structure of 600nm.
Step 4
By vaporation-type vacuum coating equipment using Au as evaporation source, one layer is plated in the sample surfaces that preparation has nanometer circular hole array
Thickness is the Au films of 50nm, and unnecessary Au films are peeled off together with predecessor and prepare Au nanometers of array of discs structures.
Gained CdS nanobelts-HfO2The overall pattern of-Au nanometers of array of discs composite nanostructures of dielectric layer is such as Fig. 1
Shown in SEM characterizations.Corresponding AFM pictures (Fig. 2) show the structural parameters and the knot of design of fiber waveguide beam splitter prepared by experiment
Structure parameter is basically identical.Fig. 3 is fiber waveguide electric-field intensity distribution figure in the device based on finite element method for simulating, can be relatively more straight
See ground and illustrate this CdS nanobelts-HfO2The fiber waveguide fraction function of-Au nanometers of array of discs composite nanostructures of dielectric layer,
It is i.e. this micro- in the optics of multichannel equivalent to multi-beam for this composite nanostructure, propagation of the light in single nanobelt
Propagated in chamber, when the position of light propagation to no Au nanometers of array of discs, due to the limitation without Au nanometers of array of discs,
It can be interfered between multiple beam.Fig. 4 a are wide according to the dark of representational fiber waveguide beam splitter with tungsten lamp under light microscope
Field scattering picture, Fig. 4 b are under SNOM, with the details in a play not acted out on stage, but told through dialogues fiber waveguide photo of the laser local excition of the 488nm wavelength device, are inserted
Figure is a nanometer enlarged drawing for strap end portion emergent light picture, can clearly be seen relative to single CdS nanobelts, the composite junction
There is branch phenomenon in the emergent light of nanometer strap end portion in structure, illustrates that the structure has light beam splitting effect really.Fig. 5 a-f are
The experimental result picture that the spot number of nanometer strap end portion outgoing changes with Au nanometers of array of discs numbers of rows, by the Au of this composite construction
Nanometer array of discs number of rows changes according to 2,3,4 successively proves that the spot number of nanometer strap end portion outgoing can be by adjusting Au nanometers of disk battle arrays
Row number of rows regulates and controls, and Fig. 5 g-i are fiber waveguide electric-field intensity distribution figures in the device of the corresponding size based on finite element method for simulating,
It was found that being consistent with experimental result, and it can clearly see multiple beam when propagating the position for causing no Au nanometers of array of discs
Interference phenomenon will be produced, and different distances can produce different interference phenomenon.Fig. 6 is the Au nanometer array of discs of identical number of rows
Nanometer strap end portion outgoing spot number with multiple-beam interference distance change experimental result picture, the sample of Three Represents
Multiple-beam interference distance is respectively 1.5 μm, and 2.2 μm, 4.2 μm, the spot number of nanometer strap end portion outgoing is also different, illustrates for phase
With the Au nanometer array of discs of number of rows, the spot number of nanometer strap end portion outgoing can also be by the interference distance tune between multiple beam
Control.
Claims (2)
1. a kind of preparation method of the fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure, described to be based on
The fiber waveguide beam splitter of metal-dielectric layer-semiconductor composite nano structure includes semiconductor layer, dielectric layer, nano-metal particle
Layer, the dielectric layer is between semiconductor layer and nano-metal particle layer；The nano-metal particle layer presses array of discs knot
Structure is distributed on the dielectric layer；The semiconductor layer is CdS semiconductor nano-strips；The dielectric layer is HfO2Layer；
It is characterized in that；The preparation method of the fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure
Comprise the following steps：
Step 1
The CdS powder for being 99.9% using purity is raw material, and using Ar gas as carrier gas, it is 20- to prepare thickness with chemical vapour deposition technique
The CdS nanobelts of 110nm；During deposition, it is 1.5-5sccm to control gas flow rate, and depositing temperature is 800-860 DEG C；
Step 2
With HfO2For raw material, semiconductor nano-strip made from step 1 is dispersed in clean Si/ SiO2On substrate, with original
Sublayer sedimentation covers the HfO that a layer thickness is 5-15nm on scattered semiconductor nano-strip2Layer；
Step 3
One layer of precursor film is coated on the semiconductor nano band that dielectric layer is carried obtained by step 2, then passes through electron beam exposure
The nanometer circular hole array structure that technology is sized on the setting position of precursor film, the predecessor are selected from poly- methyl
At least one of methyl acrylate, methyl methacrylate；In the nanometer circular hole array structure, a diameter of 280- of circular hole
320nm, cycle 580-620nm；
Step 4
Evaporation a layer thickness is on the semiconductor nano band that the nanometer circular hole array structure being sized is carried obtained by step 3
The metal film of 40-60nm, unnecessary metal film is peeled off together with precursor film and obtains the fiber waveguide beam splitter.
A kind of 2. fiber waveguide beam splitter based on metal-dielectric layer-semiconductor composite nano structure according to claim 1
Preparation method, it is characterised in that：The nano-metal particle layer is Au nano-particle layers；In the nano-metal particle layer,
Single nano particle is cylindrical.
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| CN102650711A (en) * | 2012-05-28 | 2012-08-29 | 西安交通大学 | Waveguide optical coupler based on surface plasmas and manufacturing process thereof |
| CN103278884A (en) * | 2013-03-20 | 2013-09-04 | 华中科技大学 | Surface plasmon polariton waveguide with metal-insulator-semiconductor (MIS) capacitor structure |
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| US7187837B2 (en) * | 2004-02-26 | 2007-03-06 | Sioptical, Inc. | Active manipulation of light in a silicon-on-insulator (SOI) structure |
| EP1674905B1 (en) * | 2004-12-22 | 2008-10-15 | Rohm and Haas Electronic Materials, L.L.C. | Methods of forming optical devices having polymeric layers |
| US7541058B2 (en) * | 2007-10-09 | 2009-06-02 | Endicott Interconnect Technologies, Inc. | Method of making circuitized substrate with internal optical pathway |
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| CN102650711A (en) * | 2012-05-28 | 2012-08-29 | 西安交通大学 | Waveguide optical coupler based on surface plasmas and manufacturing process thereof |
| CN103278884A (en) * | 2013-03-20 | 2013-09-04 | 华中科技大学 | Surface plasmon polariton waveguide with metal-insulator-semiconductor (MIS) capacitor structure |
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