CN104716061B - Ultrasonic welding method and the photovoltaic module welded using this method - Google Patents
Ultrasonic welding method and the photovoltaic module welded using this method Download PDFInfo
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- CN104716061B CN104716061B CN201510071983.2A CN201510071983A CN104716061B CN 104716061 B CN104716061 B CN 104716061B CN 201510071983 A CN201510071983 A CN 201510071983A CN 104716061 B CN104716061 B CN 104716061B
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of ultrasonic welding method and the photovoltaic module welded using this method, the ultrasonic welding method is used to be welded to connect interconnection metal wire and the ceramic function film on photovoltaic cell surface, the welding frequency of ultrasonic bonding is 15kHz~65kHz, and interface pressure is：0.01~6Mpa, time are 1~500ms, and welding temperature is 25~350 DEG C, and ceramic function film is the rich metallic cermet films of non-homogeneous stoicheiometry.A kind of photovoltaic module, the photovoltaic cell in photovoltaic module are electrically connected by more interconnection metal wires with other photovoltaic cells, and more interconnect metal wires and are welded to connect by above-mentioned ultrasonic bonding mode and the ceramic function film on photovoltaic cell surface.The beneficial effects of the invention are as follows：Relative to traditional more thin interconnection metal wire and the interconnection technique of photovoltaic cell, direct wiring and the welding on photovoltaic cell surface are realized by the ultrasonic welding technique of innovation, eliminate transparent membrane and bond the use of colloid, reduce cost, improve reliability.
Description
Technical field
The present invention relates to photovoltaic and its interconnected method technical field, particularly a kind of ultrasonic welding method and
The photovoltaic module welded using this method.
Background technology
At present, industry majority photovoltaic cell and component manufacturer, using the battery electricity of 2~5 main gate lines (Bus bar)
Pole is designed and mutual contact mode.First, in the manufacturing process of photovoltaic cell, the smooth surface of a battery unit, screen printing is passed through
The mode of brush and high temperature sintering forms the thin grid line of about 55~90 60~100um width.These thin grid lines typically pass through 2
1.8mm main gate line connects together.Then, in the manufacturing process of photovoltaic module, the main gate line of battery by high temperature (~
200 DEG C) welding process with being electrically connected coated with the Cu interconnecting strips of Sn layers.The battery table being collected into by thin grid line
The photogenerated current in face is pooled in main gate line, is then transferred into the wide painting Sn copper interconnecting strips of about 0.4mm thickness 2mm.Here, main grid
The width of line is wider, and in electrical contact better, contact resistance is lower, is advantageous to electricity conversion lifting.It is main but main gate line is wider
Shade masking amount caused by grid line and corresponding interconnecting strip is also bigger, and this causes photoelectric transformation efficiency to reduce again.Consider
Contact resistance and the factor Competition of optical obscurations two, at present oriented 5 main grid of industry, or even 15~50 copper conductor battery designs
The trend of transition.
According to the technical information disclosed in Canadian Patent document CA 2496557, Canadian Creative Company Day4 uses more
The thin copper conductor of root (<1mm diameters) and transparent membrane combine mode prepare basic electrode connection unit.But in the design
In, thin copper conductor is embedded into transparent membrane and is connected to solar cell, and wherein transparent membrane is to be used to improve navigability.
Similar, one kind is also illustrated in Germany Patent document DE10239845C1 and is led contact by means of optically transparent cohesive colloid
Line is fixed on transparent membrane and is subsequently fixed to the method on the metal layer of solar cell.
In above-mentioned patent document, the use of thin copper conductor improves the reliability of photovoltaic.This has benefited from carefully
After copper conductor surface volume is than increase, pliability greatly increases.Simultaneously as thin copper conductor distribution is more scattered, can connect
To more silicon chip surfaces.Even if thering is part is hidden to split, still collapsed portion can be connected by thin copper conductor and be received without influenceing electric current
Collection, strengthen subassembly product reliability.
In above-mentioned patent document, if the painting tin copper wire technology commonly used using industry, it is necessary to use scaling powder.Thin copper
The area coverage of wire is small, can not the equally intact region for covering scaling powder spraying and crossing of image width copper bar.Therefore, the corrosion of scaling powder
Property is caused along near welding lead, is easily formed a series of integrity problems such as " black line or blackspots ".To avoid above mentioned problem,
The scheme of low melting point noble metal containing In can be used.Substitute original painting Sn works in thin one layer of In metal of copper conductor electroplating surface
Skill, it is possible to avoid using scaling powder.But it can so cause relatively high cost.
If removing transparent membrane directly using plating In thin copper conductor, the component lamination step after photovoltaic cell interconnection
In rapid, thin copper conductor will connect material exposed to liquefied glue, in EVA or silica gel.We test discovery, in lamination process,
EVA can give the thrust of thin one upward out battery surface of copper conductor along the cambered surface of thin copper conductor bottom, may break welding
Point, so as to influence the outward appearance of photovoltaic module and reliability.
In such scheme, because film and adhesive agent are maintained in solar module, it means that to adhesive agent and film
Relatively high requirement in terms of long-time stability be present, also cause relatively high cost.
The content of the invention
The technical problems to be solved by the invention are：A kind of ultrasonic welding method is provided and welded using this method
Photovoltaic module, realize direct wirings and welding of the more thin interconnection metal wire on photovoltaic cell surface, avoid using scaling powder,
Bond colloid and transparent membrane.
The technical solution adopted for the present invention to solve the technical problems is：A kind of ultrasonic welding method, for the company of welding
Interconnection metal wire and the ceramic function film on photovoltaic cell surface are connect, the welding frequency of ultrasonic bonding is 15kHz~65kHz,
Interface pressure is：0.01~6Mpa, time are 1~500ms, and welding temperature is 25~350 DEG C, the ceramic work(on photovoltaic cell surface
Energy film is the rich metallic film of non-homogeneous stoicheiometry.
A kind of photovoltaic module, the photovoltaic cell in photovoltaic module are electrically connected by more interconnection metal wires with other photovoltaic cells
Connect, more interconnection metal wires pass through the ultrasonic bonding mode described in claim 1 or 2 and the ceramic function on photovoltaic cell surface
Film solder connects.
Further limit, more interconnection metal wires are welded by the metal electrode of ultrasonic bonding mode and photovoltaic cell to be connected
Connect, the welding frequency of ultrasonic bonding is 25kHz~65kHz, and interface pressure is：0.01~6Mpa, time are 1~500ms.
Further limit, there is metal electrode on the smooth surface of photovoltaic cell, be ceramic function film outside metal electrode, it is more
Root interconnection metal wire is disposably welded by the ultrasonic bonding mode described in claim 1 or 2, completes interconnection metal wire and gold
Category electrode is welded to connect and interconnected metal wire with interconnecting being welded to connect for the ceramic function film under metal wire.
Further limit, the metal electrode of the smooth surface of photovoltaic cell is the thin grid line of metal that is parallel to each other.
Further limit, the back side of photovoltaic cell be Al back surface fields, more interconnection metal wires by ultrasonic bonding mode and
Al back surface fields are welded to connect, and the welding frequency of ultrasonic bonding is 25kHz~65kHz, and interface pressure is：0.01~6Mpa, time
For 1~500ms, welding temperature is 25~350 DEG C.
Further limit, interconnection metal wire is that Al alloy lead wires, Cu alloy lead wires, the Cu cores that there are Al alloy surface layers are led
Line, the Cu cores wire for having Ni alloy surface layers or the Cu core wires for having Sn alloy surface layers.
Further limit, the superficial layer for interconnecting metal wire contains Si or Bi elements, and diameter is in 25~500um.
Further limit, ceramic function film is SiNx films or AlOx films or AlOx and SiNx lamination
The deielectric-coating such as film or multilayer SiNx stack membranes, or be the ceramic functional conductive films such as InTiOx films, TiOx films.
The beneficial effects of the invention are as follows：The interconnection technique of metal wire and photovoltaic cell is carefully interconnected relative to traditional more,
Direct wiring and the welding on photovoltaic cell surface are realized by the ultrasonic welding technique of innovation, transparent membrane is eliminated and glues
The use of gum deposit body, reduces cost, improves reliability；The use of scaling powder is avoided simultaneously, eliminates the corrosion of scaling powder
Property lower tape come potential risk, there is provided product reliability；The direct welding of thin interconnection metal wire and Al back electrodes is realized, and
Silver electrode and covering thin transparent film need not be made on Al back electrodes, silver paste and the usage amount of transparent membrane is greatly lowered.
Brief description of the drawings
The present invention is further described with reference to the accompanying drawings and examples；
Fig. 1 a are the front welding schematic diagram of existing photovoltaic battery module；
Fig. 1 b are the welding structure schematic diagrames of the smooth surface of the interconnection metal wire and photovoltaic cell in Fig. 1 a in dashed box；
Fig. 2 a are the front welding schematic diagrames of the photovoltaic battery module of the present invention；
Fig. 2 b are the welding structure schematic diagrames of the smooth surface of the interconnection metal wire and photovoltaic cell in Fig. 2 a in dashed box；
Fig. 3 a are the back side welding schematic diagrames of existing photovoltaic battery module；
Fig. 3 b are the welding structure schematic diagrames at the back side of the interconnection metal wire and photovoltaic cell in Fig. 3 a in dashed box；
Fig. 4 a are the back side welding schematic diagrames of the photovoltaic battery module of the present invention；
Fig. 4 b are the breakpoint formula welding structure schematic diagrames at the back side of the interconnection metal wire and photovoltaic cell in Fig. 4 a in dashed box；
Fig. 4 c are the continuity welding structure schematic diagrames at the back side of the interconnection metal wire and photovoltaic cell in Fig. 4 a in dashed box；
Fig. 5 is the structural representation of existing photovoltaic battery module；
Fig. 6 is the structural representation of the photovoltaic battery module of the present invention；
Fig. 7 is the graph of a relation of SiNx film chemicals proportioning and refractive index in embodiments of the invention one；
The ultrasonic wave that Fig. 8 is the present invention applies and heating means schematic diagram；
Fig. 9 is MIcrosope image of the 30um metal Al lines with ceramic function film SiNx surfaces mechanical bond of the present invention；
In figure, 1. interconnection metal wires, 2. ceramic function films, 3. metal electrodes, 4.Al back surface fields, 5. protective films, 6. is viscous
Gum deposit body, 7.AgAl slurries region, 8. pre-add thermal station, 9. photovoltaic cells, 10.EVA layers, 11. glass cover-plates, the 12.TPT/PET back ofs the body
Plate.
Embodiment
A kind of ultrasonic welding method is thin for being welded to connect interconnection metal wire 1 and the ceramic function on the surface of photovoltaic cell 9
Film 2, the welding frequency of ultrasonic bonding is 15kHz~65kHz, and interface pressure is：0.01~6Mpa, time are 1~500ms,
Welding temperature is 25~350 DEG C.The ceramic function film 2 on the surface of photovoltaic cell 9 is the rich cermet of non-homogeneous stoicheiometry
Function film, the ceramic function film for lamination form membrane can be that the film of only superficial layer is the richness of non-homogeneous stoicheiometry
Cermet function film or surface multi-layer or all layers are thin for the rich cermet function of non-homogeneous stoicheiometry
Film, the surplus capacity of the metallic element of the rich cermet function film of non-homogeneous stoicheiometry are generally 20~100%.Ceramic work(
Energy film is the medium such as SiNx films or AlOx films or AlOx and SiNx stack membrane or multilayer SiNx stack membranes
Film, or be the ceramic functional conductive films such as InTiOx films, TiOx films.In this industry prepared by above-mentioned ceramic function film
During, typically by adjusting reaction gas flow ratio or atmosphere gas partial pressure in film forming chamber body, realize that metallic element is had more than needed
The regulation of amount.
A kind of photovoltaic module, two-by-two by being connected with each other for 15 interconnection metal wires 1 between photovoltaic cell 9.Interconnection gold
Belong to line 1 while the metal electrode 3 with the surface of photovoltaic cell 9 forms electric conductivity and connected, and 9 same side surface of photovoltaic cell
Ceramic function film 2 also directly forms connection.
The method that interconnection metal wire 1 connects with the formation of metal electrode 3 electric conductivity on the surface of photovoltaic cell 9 is supersonic welding
Connect, it is preferable that its welding frequency is 25kHz~65kHz, and interface pressure is：0.01~6M Pa, time are 1~500ms.Interconnection
By the effect of ultrasonic wave between the metal electrode 3 on the surface of photovoltaic cell 9 rubbing action occurs first for metal wire 1 so that mutually
The surface oxide layer for joining metal wire 1 is removed by friction, and the metal electrode 3 on internal fresh metal level and the surface of photovoltaic cell 9 is straight
Mutually extruding bonding is connect, or alloy is mutually diffuseed to form by local friction's heat.In photovoltaic cell manufacture, ultrasound is introduced
Ripple welding method avoids the use of scaling powder, can also be without using external heat source.
The method for interconnecting metal wire 1 and the formation connection of ceramic function film 2 is ultrasonic bonding, it is preferable that welding frequency
For 15kHz~65kHz, interface pressure is：0.01~6M Pa, time are 1~500ms, and welding temperature is 25~350 DEG C.
The interconnection diameter of metal wire 1 has ductility different with main part and weldability in 25~500um, superficial layer.Mutually
Connection metal wire 1 can contain other micro constitutents (such as Si, Bi etc.), but basic composition is Al alloy lead wires, Cu alloy lead wires, have
The Cu cores wire of Al alloy surface layers, the Cu core wires for having the Cu cores wire of Ni alloy surface layers or having Sn alloy surface layers.
In the present invention, for photovoltaic cell technology application, the general ceramic function film 2 of especially existing industry is such as
SiNx, AlOx are passivated and fallen into light ceramic film etc., while interconnection metal wire 1 and ceramic function are usually realized using 3 kinds of technical elements
The lower temperature welding of film 2.1) the ceramic function film 2 on the surface of photovoltaic cell 9 uses non-homogeneous stoicheiometry, rich in gold
Category；2) the ultrasonic wave local friction under certain pressure and deformation；3) pre-add thermal station 8 heats photovoltaic cell 9.By the above method,
The present invention breaches the problem that interconnection metal wire 1 and ceramic function film 2 directly weld, general only 1000 in the prior art
DEG C or so at a high temperature of the welding that could realize, the present invention is just real in the case where 25-350 DEG C of pre-add thermal station 8 of ultrasonic wave and constant temperature acts on
Good combination is showed.Fig. 9 is the micro- of 30um metal Al lines and the ceramic function film SiNx surfaces mechanical bond of the present invention
Mirror image, nun's thread is the thin grid lines of Ag in figure, is SiNx film layers between nun's thread, and the Al that protuberance beam bridge shape metal wire is 30um is led
Line.
When the back side of photovoltaic cell is Al back surface fields 4, more interconnection metal wires 1 pass through ultrasonic bonding mode and Al back surface fields
4 are welded to connect, and the welding frequency of ultrasonic bonding is 25kHz~65kHz, and interface pressure is：0.01~6Mpa, the time be 1~
500ms, welding temperature are 25~350 DEG C.
Embodiment one：
As shown in Figure 2 a, surface printing has the common crystal silicon photovoltaic electric for prejudging the thin Ag grid lines of grid as metal electrode 3
Pond 9 is together in series by 18 interconnection metal wires 1.The smooth surface of the connection of metal wire 1 left side photovoltaic cell 9 is interconnected, is connected simultaneously
The back side of right side photovoltaic cell 9.Interconnection metal wire 1 is that the soft Cu wires that Al lines or Surface coating have Al are formed.
For ease of illustration issue details, the part in Fig. 2 a in dashed box is cut down, along paper parallel direction from bottom to top
Observation, finding photovoltaic cell structure is as shown in Figure 2 b.
First, the electric connection of interconnection metal wire 1 and metal electrode 3 is realized by ultrasonic welding method.Ultrasonic wave frequency
Rate is 61kHz, and interface pressure is about 1.5MPa, and the ultrasonic bonding time is 70ms.Interconnection metal wire 1 is that 1%Si is contained on surface
The Al alloy lead wires of element, a diameter of 30~300um, ultrasonic power are 150~300W.Ultrasonic friction can remove surface
Oxide layer, the interconnection metal wire 1 and metal electrode 3 that then extruding fusion contacts with each other.Can realize at room temperature metal electrode 3 and mutually
Join the reliable welding of metal wire 1.Temperature influences little on welding result.
Secondly, realize that a sunken light for interconnection metal wire 1 and the surface of photovoltaic cell 9 and passivation are made by ultrasonic welding method
The mechanical connection of ceramic function film 2.Ceramic function film 2 is SiNx films in the present embodiment.SiNx films pass through
The chemical vapor deposition (PECVD) of ion enhancing, it is prepared from SiH3 and NH3 reactions.According to different SiH3 and NH3 flows
Proportioning, the SiNx films of different chemical composition proportioning can be prepared.Experimental data such as Fig. 6 is visible, while considers SiNx films
Layer sunken light, passivation and other effects, select film refractive index be n=2.1.At this moment, N/Si is about 0.82, converts Si/N=
1.22.Under evening chemical component corresponding to Si3N4, Si/N=0.75.The Si of SiNx films surplus capacity is about in the present embodiment
47%.
Si/Al alloys, Si/Ni alloys are electric conductivity silicon alloy technologies common in semiconductor technology, are led for Cu or Al
The source region of line and semiconductor CMOS pipe (source) or drain region (drain) form conductive contact.In semiconductor technology, metal Al or
Ni is to be splashed to Si surfaces in a vacuum, and the temperature for forming alloy is 150~500 DEG C.In the present embodiment, we select Silicon-rich
~50% SiNx films, it is exactly to using the rich Si defects in SiNx films, be easy in SiNx films and interconnection metal wire 1
Between formed mechanically connect.
When welding interconnection metal wire 1 with ceramic function film 2 by ultrasonic welding method, ultrasonic frequency 61kHz,
Interface pressure is about 1.5MPa, and the ultrasonic bonding time is 70ms.In experiment, interconnection metal wire 1 is surface containing 1% element silicon
Al alloy lead wires, a diameter of 30um, ultrasonic power 70W.Ultrasonic wave applying mode is as shown in figure 8, interconnect metal wire 1 by magnetic
The wave welding head of ultrasonic wave of motor control, tightly fit together with 1.5MPa pressure and SiNx films.Ultrasonic horn is simultaneously on boundary
The horizontal direction in face, vibration of ultrasonic wave is produced with 61kHz frequency.The duration of whole process is 70ms.Must in welding
Photovoltaic cell 9 must be preheated by pre-add thermal station 8, realize under the welding temperature of 100 DEG C or so of constant temperature to interconnection metal wire 1 with
Ceramic function film 2 is welded.
Fig. 1 a and 1b give the schematic diagram for the original technology that Canadian Day4Energy companies etc. are representative.Fig. 1 a and 1b
In, interconnection metal wire 1 forms alloy type good conductive by heat fusion with metal electrode 3 and connected.Meanwhile interconnect metal wire
Glued between 1 and the ceramic function film 2 i.e. SiNx films for playing sunken light passivation and being used as on the surface of photovoltaic cell 9 by bonding colloid
Knot, illustrated in Figure 1b with x symbols.It is of the invention to be compared with old technology, there are following features：1) present invention no longer needs to prevent mutually
The protective film 5 that connection metal wire 1 floats in laminating packaging, this is cost savings.2) present invention no longer needs to bond colloid 6.
This not only saves cost, it also avoid bonding the residual reaction of colloid 6, improves reliability.
Since 2014, GTAT companies of the U.S. and German Schmid companies, it has been proposed and has used original welding material body
System, such as apply tin Cu lines (Cu-Sn material systems).To avoid using low melting point noble metal (such as In), it is easy to Technique Popularizing and practicality.
By inference, this will inevitably use scaling powder.Corrosion composition in scaling powder easily and photovoltaic cell 9 package material
Material, the reaction such as such as EVA, PET, the problems such as causing snail line, black line, blackspot.And the present invention then thoroughly avoids this from principle
A little reliability hidden danger.
Fig. 4 a, 4b, 4c are given in the present embodiment, the connection method of the back side of photovoltaic cell 9 and interconnection metal wire 1.For just
In describing the problem details, the part in Fig. 4 a in dashed box is cut down, observed from bottom to top along paper parallel direction, finding photovoltaic
The structure of battery 9 is as shown in Figure 4 b.The back side of photovoltaic cell 9 is the most frequently used Al back surface fields 4 of industrial circle.Namely in silicon chip back side silk screen
Al is starched in printing, is then dried sintering and is formed Al back surface fields 4.Interconnection metal wire 1 and Al back surface fields 4 are welded by ultrasonic welding method
When, ultrasonic frequency 61kHz, interface pressure is about 4.5MPa, and the ultrasonic bonding time is 70ms.Interconnection metal wire 1 is Al
Line, a diameter of 30um, ultrasonic power 100W.Preheating temperature is 100 DEG C.Higher interface pressure, certain welding temperature
Be advantageous to the stability of technical process.This may be relevant with the pore space structure that the Al back surface fields back side is more loose.Interconnecting metal wire 1 can
To form the conductive electric connection (such as pick and can realize easily by ultrasonic wave Al wire bondings) of breakpoint formula with Al back surface fields, such as Fig. 4 b
It is shown.Or form continuity connection and be conductively connected, as illustrated in fig. 4 c.
Fig. 3 gives the back side connection scheme of photovoltaic cell 9 of original technology.Photovoltaic cell 9 is not only whole in Fig. 3 a
The back side has used Al to starch to form Al back surface fields 4.Meanwhile AgAl slurries region 7 has been printed, to strengthen weldability.Because at 200 DEG C
Under the welding temperature of left and right, Al back surface fields 4 are either can not to apply tin Cu wires with Cu wires or Al wires reliably weld to be formed
It is electrically connected with.As shown in Figure 3 b, interconnect metal wire 1 and AgAl slurries region 7 and weld and is electrically connected, and the not shape of Al back surface fields 4
Into welding relation.Interconnection metal wire 1 and Al back surface fields 4 are bonded together by bonding colloid 6 (illustrating in figure with x), are then pressed
Under protective film 5.Protective film 5 can protect interconnection metal wire 1 in follow-up laminating packaging technical process not by EVA
Jacked up Deng encapsulating material, avoid damage to the electrical property of pad.In the back side interconnection process of photovoltaic cell 9, of the invention is new
Technology avoids cohesive colloid 6 and protective film 5, also thoroughly eliminates more expensive AgAl slurries.
Fig. 5 gives the composition structural representation of the photovoltaic module of original technology.Photovoltaic cell 9 and covered with protective film
5 are connected in series with the interconnection metal wire 1 for bonding colloid 6, are then covered by EVA layer about 10.Again by glass cover-plate 11, and
TPT/PET backboards 12 coat, and are laminated by 150 DEG C or so of heatings, and EVA produces crosslinked action, ultimately forms photovoltaic module.Figure
6 give the photovoltaic schematic diagram of the present invention.Photovoltaic cell 9 and interconnection metal wire 1 are directly connected in series, Ran Houyou
EVA layer covers about 10.Coated by glass cover-plate 11, and TPT/PET backboards 12, be laminated by 150 DEG C or so of heatings again,
EVA produces crosslinked action, ultimately forms photovoltaic module.Material is saved, improves reliability.
Embodiment two：As shown in figures 2 a and 2b, surface printing has prejudges the common of the thin Ag grid lines of grid as metal electrode 3
Crystal silicon photovoltaic cell 9 is together in series by 18 interconnection metal wires 1.Interconnection metal wire 1 is the Cu cores for having Al alloy surface layers
Wire.Other descriptions are identical with embodiment one.
Embodiment three：This embodiment is original individual layer SiNx films in enhanced multilayer SiNx films substitution embodiment one.
SiNx films are different with body layer Si contents in the Si contents of superficial layer.In the PECVD depositing operations of SiNx films, last 1s works
Skill is close to amorphous silicon deposition process.Other are identical with embodiment one.
Example IV：Ceramic function film 2 as surface passivated membrane is AlOx, i.e., the Al2O3 of non-homogeneous chemical constituent
Film (rich Al phases), substitution or part instead of the SiNx films in embodiment one.Such as：1) AlOx substitutes SiNx thin comprehensively
Film；2) AlOx/SiNx laminations substitution SiNx films.Other are consistent with embodiment one.
Embodiment five：For typical thin film silicon/crystalline silicon heterojunction (HIT) cell condition, battery surface is transparent
Conducting film and Ag slurry composite constructions (InTiOx/Ag).In this example, oxide conductive film InTiOx instead of the pottery in embodiment one
Porcelain function film 2, other are consistent with embodiment one.
Other embodiment：For having other battery structures of similar structures metal, ceramic membrane intervening surface, such as AlOx
Passivating back battery, passivated emitter back side battery (PERC), thin film silicon/crystalline silicon heterojunction (HIT) battery and printed form
Present disclosure is also easily applied by full back electrode cell (IBC) battery, the industry personnel for being familiar with battery process.At this
In a little applications, the technical process and embodiment on metal electrode 3 and the surface of ceramic function film 2 in ultrasonic bonding photovoltaic cell 9
It is similar in one, it should also be regarded as belonging to the protection domain invented.
Claims (9)
1. a kind of ultrasonic welding method, thin for being welded to connect interconnection metal wire (1) and the ceramic function on photovoltaic cell surface
Film (2), it is characterized in that：The welding frequency of ultrasonic bonding is 15kHz~65kHz, and interface pressure is：0.01~6Mpa, time
For 1~500ms, welding temperature is 25~350 DEG C, and the ceramic function film (2) on photovoltaic cell surface is non-homogeneous stoicheiometry
Rich metallic cermet films.
2. a kind of photovoltaic module, the photovoltaic cell in photovoltaic module passes through more interconnection metal wires (1) and other photovoltaic cells electricity
Connection, it is characterized in that：More described interconnection metal wires (1) pass through the ultrasonic bonding mode and photovoltaic described in claim 1
The ceramic function film (2) of battery surface is welded to connect.
3. photovoltaic module according to claim 2, it is characterized in that：More described interconnection metal wires (1) pass through ultrasonic wave
The metal electrode of welding manner and photovoltaic cell (3) is welded to connect, and the welding frequency of ultrasonic bonding is 25kHz~65kHz, boundary
Face pressure is by force：0.01~6Mpa, time are 1~500ms.
4. photovoltaic module according to claim 2, it is characterized in that：There is metal electricity on the smooth surface of described photovoltaic cell
Pole (3), metal electrode (3) are ceramic function film (2) outside, and more interconnection metal wires (1) pass through the ultrasound described in claim 1
Ripple welding manner disposably welds, and completion interconnection metal wire (1) is welded to connect and interconnected metal wire with metal electrode (3)
(1) with interconnecting being welded to connect for ceramic function film (2) under metal wire (1).
5. photovoltaic module according to claim 4, it is characterized in that：The metal electrode of the smooth surface of described photovoltaic cell
(3) it is the thin grid line of metal that is parallel to each other.
6. photovoltaic module according to claim 4, it is characterized in that：The back side of described photovoltaic cell is Al back surface fields (4), more
Root interconnection metal wire (1) is welded to connect by ultrasonic bonding mode and Al back surface fields (4), and the welding frequency of ultrasonic bonding is
25kHz~65kHz, interface pressure are：0.01~6Mpa, time are 1~500ms, and welding temperature is 25~350 DEG C.
7. according to the photovoltaic module described in Claims 2 or 3 or 4 or 5 or 6, it is characterized in that：Described interconnection metal wire (1) is
Al alloy lead wires, Cu alloy lead wires, the Cu cores wire for there are Al alloy surface layers, there is the Cu cores wire of Ni alloy surface layers or have
The Cu core wires of Sn alloy surface layers.
8. photovoltaic module according to claim 7, it is characterized in that：The superficial layer of described interconnection metal wire (1) contains Si
Or Bi elements, diameter is in 25~500um.
9. according to the photovoltaic module described in Claims 2 or 3 or 4 or 5 or 6, it is characterized in that：Described ceramic function film (2)
For SiNx films or the stack membrane or multilayer SiNx stack membranes or InTiOx of AlOx films or AlOx and SiNx
Film or TiOx films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510071983.2A CN104716061B (en) | 2015-01-29 | 2015-02-12 | Ultrasonic welding method and the photovoltaic module welded using this method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2015100464585 | 2015-01-29 | ||
| CN201510046458 | 2015-01-29 | ||
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Effective date of registration: 20220221 Address after: 213000 Room 202, building 1, No. 8, Lanxiang Road, West Taihu science and Technology Industrial Park, Wujin District, Changzhou City, Jiangsu Province Patentee after: Changzhou heterojunction management consulting partnership (L.P.) Address before: 464000 Changan Road, the Shihe River District, Xinyang, Henan Province, No. 237 Patentee before: XINYANG NORMAL University |