CN104710165B - A kind of integrated circuit Ceramic Substrate Material and preparation method thereof - Google Patents
A kind of integrated circuit Ceramic Substrate Material and preparation method thereof Download PDFInfo
- Publication number
- CN104710165B CN104710165B CN201510101055.6A CN201510101055A CN104710165B CN 104710165 B CN104710165 B CN 104710165B CN 201510101055 A CN201510101055 A CN 201510101055A CN 104710165 B CN104710165 B CN 104710165B
- Authority
- CN
- China
- Prior art keywords
- integrated circuit
- ceramic substrate
- substrate material
- preparation
- sintering furnace
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention discloses a kind of integrated circuit Ceramic Substrate Material and preparation method thereof, described integrated circuit Ceramic Substrate Material includes aluminium sesquioxide, mullite, carborundum, beryllium oxide, calcium oxide, zirconium carbide, magnesium oxide, tantalum nitride.The preparation method of described material comprises the following steps: (1) carries out ball milling after above-mentioned composition mixing；(2) after ball milling, the dusty material of step (1) is carried out cold compaction molding；(3) dusty material after compressing being carried out gradient temperature sintering, put in high temperature sintering furnace by the ceramic material after compressing for step (2), first being raised by high temperature sintering furnace temperature is 800 830 DEG C, sinters 3h at such a temperature；Again high temperature sintering furnace temperature is increased to 950 1000 DEG C, sinters 3h at such a temperature；Last rising by high temperature sintering furnace temperature again is 1,050 1100 DEG C, sinters 3h at such a temperature；Cooling, for the Ceramic Substrate Material of preparation.
Description
Technical field
The invention belongs to ceramic material field, relate to a kind of Ceramic Substrate Material and preparation side thereof
Method, is specifically related to a kind of integrated circuit Ceramic Substrate Material and preparation method thereof.
Background technology
Integrated circuit ceramic substrate needs and the electrical property of other components and parts on integrated circuit
Matter, physical property, chemical property match.Such as it needs have good heat conductivility,
If the ceramic substrate for integrated circuit does not has preferable heat conductivility, at integrated circuit
In work, the accumulation for a long time of substantial amounts of heat can cause the damage of integrated circuit.For integrated
Circuit except need possess higher heat conductivility in addition to, ceramic substrate also needs to have resistance to height
Temperature, electrical insulation capability are high, dielectric constant and dielectric loss is low, chemical stability is good and element
The feature such as similar thermal expansion coefficient.
While improving the heat conductivility of integrated circuit ceramic substrate, reduce pottery as far as possible
The dielectric constant of ceramic chip, is the focus of a current research.
Summary of the invention
Solve the technical problem that: the ceramic substrate for integrated circuit needs just there is relatively low Jie
Electric constant, preferable heat conductivility, the ceramic material possessing above-mentioned superperformance just can be suitably used for
In integrated circuit, and the dielectric constant for the ceramic substrate of integrated circuit of routine is excessive, and
And its heat conductivility is relatively low, it is therefore desirable to the dielectric effectively reducing Ceramic Substrate Material is normal
Number, improves the heat conductivility of Ceramic Substrate Material.
Technical scheme: the invention discloses a kind of integrated circuit Ceramic Substrate Material and preparation side thereof
Method, described integrated circuit Ceramic Substrate Material is made up of according to weight ratio following component:
Wherein, described a kind of integrated circuit Ceramic Substrate Material, by following component according to weight
Than composition:
The preparation method of a kind of integrated circuit Ceramic Substrate Material, preparation method includes following step
Rapid:
(1) aluminium sesquioxide 15-40 part, mullite 8-18 part, carbonization are taken the most by weight
Silicon 5-12 part, beryllium oxide 3-7 part, calcium oxide 6-13 part, zirconium carbide 3-7 part, magnesium oxide
4-10 part, tantalum nitride 2-5 part；Carrying out ball milling after above-mentioned composition mixing, ball mill turns
Speed is 100rpm-200rpm, and Ball-milling Time is 3h-6h；
(2) after ball milling, the dusty material of step (1) is carried out cold compaction molding, compressing
Pressure is 120MPa-150MPa, and the press time is 2h；
(3) dusty material after compressing is carried out gradient temperature sintering, by step (2)
Ceramic material after compressing puts in high temperature sintering furnace, first by high temperature sintering furnace temperature liter
A height of 800-830 DEG C, sinter 3h at such a temperature；Again high temperature sintering furnace temperature is increased to
950-1000 DEG C, sinter 3h at such a temperature；Last rising by high temperature sintering furnace temperature again is
1050-1100 DEG C, sinter 3h at such a temperature；Cooling, for the integrated circuit ceramic base of preparation
Sheet material.
The preparation method of described a kind of integrated circuit Ceramic Substrate Material, drum's speed of rotation is
150rpm, Ball-milling Time is 4h.
The preparation method of described a kind of integrated circuit Ceramic Substrate Material, compressing pressure is
140MPa。
The preparation method of described a kind of integrated circuit Ceramic Substrate Material, described integrated circuit
First being raised by high temperature sintering furnace temperature in the preparation method of Ceramic Substrate Material is 810 DEG C, then
High temperature sintering furnace temperature is increased to 980 DEG C, sinters 3h at such a temperature；Last again by high temperature
Sintering furnace temperature rises a height of 1080 DEG C.
Beneficial effect: by the preparation technology of integrated circuit Ceramic Substrate Material and preparation are formed
Composition carries out reasonably optimizing, and integrated circuit Ceramic Substrate Material prepared by the present invention has possessed relatively low
Dielectric constant and higher heat conductivility, there is the highest heat conductivity, be highly suitable for
During the substrate of integrated circuit uses, improve the radiating efficiency of integrated circuit.
Detailed description of the invention
The following examples can make those skilled in the art that the present invention be more fully understood, but not
Limit the present invention by any way.
Embodiment 1
(1) aluminium sesquioxide 40 parts, mullite 18 parts, carborundum 5 are taken the most by weight
Part, beryllium oxide 3 parts, calcium oxide 13 parts, zirconium carbide 3 parts, magnesium oxide 4 parts, tantalum nitride
5 parts；Carrying out ball milling after above-mentioned composition mixing, drum's speed of rotation is 200rpm, during ball milling
Between be 6h；
(2) after ball milling, the dusty material of step (1) is carried out cold compaction molding, compressing
Pressure is 150MPa, and the press time is 2h；
(3) dusty material after compressing is carried out gradient temperature sintering, by step (2)
Ceramic material after compressing puts in high temperature sintering furnace, first by high temperature sintering furnace temperature liter
A height of 830 DEG C, sinter 3h at such a temperature；Again high temperature sintering furnace temperature is increased to 950 DEG C,
Sinter 3h at such a temperature；Last rising by high temperature sintering furnace temperature again is 1050 DEG C, at this
At a temperature of sinter 3h；Cooling, for the integrated circuit Ceramic Substrate Material of preparation.
Embodiment 2
(1) aluminium sesquioxide 15 parts, mullite 8 parts, carborundum 12 are taken the most by weight
Part, beryllium oxide 7 parts, calcium oxide 6 parts, zirconium carbide 7 parts, magnesium oxide 10 parts, tantalum nitride
2 parts；Carrying out ball milling after above-mentioned composition mixing, drum's speed of rotation is 100rpm, during ball milling
Between be 3h；
(2) after ball milling, the dusty material of step (1) is carried out cold compaction molding, compressing
Pressure is 120MPa, and the press time is 2h；
(3) dusty material after compressing is carried out gradient temperature sintering, by step (2)
Ceramic material after compressing puts in high temperature sintering furnace, first by high temperature sintering furnace temperature liter
A height of 800 DEG C, sinter 3h at such a temperature；Again high temperature sintering furnace temperature is increased to 1000 DEG C,
Sinter 3h at such a temperature；Last rising by high temperature sintering furnace temperature again is 1100 DEG C, at this
At a temperature of sinter 3h；Cooling, for the integrated circuit Ceramic Substrate Material of preparation.
Embodiment 3
(1) aluminium sesquioxide 22 parts, mullite 16 parts, carborundum 7 are taken the most by weight
Part, beryllium oxide 6 parts, calcium oxide 11 parts, zirconium carbide 6 parts, magnesium oxide 6 parts, tantalum nitride
4 parts；Carrying out ball milling after above-mentioned composition mixing, drum's speed of rotation is 200rpm, during ball milling
Between be 6h；
(2) after ball milling, the dusty material of step (1) is carried out cold compaction molding, compressing
Pressure is 150MPa, and the press time is 2h；
(3) dusty material after compressing is carried out gradient temperature sintering, by step (2)
Ceramic material after compressing puts in high temperature sintering furnace, first by high temperature sintering furnace temperature liter
A height of 830 DEG C, sinter 3h at such a temperature；Again high temperature sintering furnace temperature is increased to 950 DEG C,
Sinter 3h at such a temperature；Last rising by high temperature sintering furnace temperature again is 1050 DEG C, at this
At a temperature of sinter 3h；Cooling, for the integrated circuit Ceramic Substrate Material of preparation.
Embodiment 4
(1) aluminium sesquioxide 36 parts, mullite 12 parts, carborundum 10 are taken the most by weight
Part, beryllium oxide 4 parts, calcium oxide 8 parts, zirconium carbide 5 parts, magnesium oxide 9 parts, tantalum nitride 3
Part；Carrying out ball milling after above-mentioned composition mixing, drum's speed of rotation is 100rpm, during ball milling
Between be 3h；
(2) after ball milling, the dusty material of step (1) is carried out cold compaction molding, compressing
Pressure is 120MPa, and the press time is 2h；
(3) dusty material after compressing is carried out gradient temperature sintering, by step (2)
Ceramic material after compressing puts in high temperature sintering furnace, first by high temperature sintering furnace temperature liter
A height of 800 DEG C, sinter 3h at such a temperature；Again high temperature sintering furnace temperature is increased to 1000 DEG C,
Sinter 3h at such a temperature；Last rising by high temperature sintering furnace temperature again is 1100 DEG C, at this
At a temperature of sinter 3h；Cooling, for the integrated circuit Ceramic Substrate Material of preparation.
Embodiment 5
(1) aluminium sesquioxide 28 parts, mullite 14 parts, carborundum 8 are taken the most by weight
Part, beryllium oxide 5 parts, calcium oxide 10 parts, zirconium carbide 6 parts, magnesium oxide 7 parts, tantalum nitride
4 parts；Carrying out ball milling after above-mentioned composition mixing, drum's speed of rotation is 150rpm, during ball milling
Between be 4h；
(2) after ball milling, the dusty material of step (1) is carried out cold compaction molding, compressing
Pressure is 140MPa, and the press time is 2h；
(3) dusty material after compressing is carried out gradient temperature sintering, by step (2)
Ceramic material after compressing puts in high temperature sintering furnace, first by high temperature sintering furnace temperature liter
A height of 810 DEG C, sinter 3h at such a temperature；Again high temperature sintering furnace temperature is increased to 980 DEG C,
Sinter 3h at such a temperature；Last rising by high temperature sintering furnace temperature again is 1080 DEG C, at this
At a temperature of sinter 3h；Cooling, for the integrated circuit Ceramic Substrate Material of preparation.
Comparative example
(1) aluminium sesquioxide 40 parts, mullite 18 parts, carborundum 5 are taken the most by weight
Part, beryllium oxide 3 parts, calcium oxide 13 parts, zirconium carbide 3 parts, magnesium oxide 4 parts；By above-mentioned
Composition mixing after carry out ball milling, drum's speed of rotation is 200rpm, and Ball-milling Time is 6h；
(2) after ball milling, the dusty material of step (1) is carried out cold compaction molding, compressing
Pressure is 150MPa, and the press time is 2h；
(3) dusty material after compressing is carried out gradient temperature sintering, by step (2)
Ceramic material after compressing puts in high temperature sintering furnace, first by high temperature sintering furnace temperature liter
A height of 830 DEG C, sinter 3h at such a temperature；Again high temperature sintering furnace temperature is increased to 950 DEG C,
Sinter 3h at such a temperature；Last rising by high temperature sintering furnace temperature again is 1050 DEG C, at this
At a temperature of sinter 3h；Cooling, for the integrated circuit Ceramic Substrate Material of preparation.
Determine Jie of the integrated circuit ceramic substrate ceramic material of embodiment 1 to 5 and comparative example
Electric constant and heat conductivity, result is as shown in the table:
| Dielectric constant | Heat conductivity (W/m K) | |
| Embodiment 1 | 14.2 | 116 |
| Embodiment 2 | 14.5 | 118 |
| Embodiment 3 | 13.0 | 135 |
| Embodiment 4 | 13.1 | 132 |
| Embodiment 5 | 12.5 | 151 |
| Comparative example | 16.3 | 101 |
From table, result can draw, the Ceramic Substrate Material that preparation method of the present invention prepares
Heat conductivity the highest, dielectric constant is relatively low, is highly suitable in integrated circuit, its property
The Ceramic Substrate Material of comparative example can be better than.
Claims (6)
1. an integrated circuit Ceramic Substrate Material, it is characterised in that described integrated circuit pottery
Ceramic chip material is made up of according to weight ratio following component:
A kind of integrated circuit Ceramic Substrate Material the most according to claim 1, its feature
It is that described integrated circuit Ceramic Substrate Material is made up of according to weight ratio following component:
3. the preparation method of an integrated circuit Ceramic Substrate Material, it is characterised in that described
The preparation method of integrated circuit Ceramic Substrate Material comprises the following steps:
(1) aluminium sesquioxide 15-40 part, mullite 8-18 part, carbonization are taken the most by weight
Silicon 5-12 part, beryllium oxide 3-7 part, calcium oxide 6-13 part, zirconium carbide 3-7 part, magnesium oxide
4-10 part, tantalum nitride 2-5 part；Carrying out ball milling after above-mentioned composition mixing, ball mill turns
Speed is 100rpm-200rpm, and Ball-milling Time is 3h-6h；
(2) after ball milling, the dusty material of step (1) is carried out cold compaction molding, compressing
Pressure is 120MPa-150MPa, and the press time is 2h；
(3) dusty material after compressing is carried out gradient temperature sintering, by step (2)
Dusty material after compressing puts in high temperature sintering furnace, first by high temperature sintering furnace temperature liter
A height of 800-830 DEG C, sinter 3h at such a temperature；Again high temperature sintering furnace temperature is increased to
950-1000 DEG C, sinter 3h at such a temperature；Last rising by high temperature sintering furnace temperature again is
1050-1100 DEG C, sinter 3h at such a temperature；Cooling, for the integrated circuit ceramic base of preparation
Sheet material.
The preparation side of a kind of integrated circuit Ceramic Substrate Material the most according to claim 3
Method, it is characterised in that in the preparation method of described integrated circuit Ceramic Substrate Material, ball mill turns
Speed is 150rpm, and Ball-milling Time is 4h.
The preparation side of a kind of integrated circuit Ceramic Substrate Material the most according to claim 3
Method, it is characterised in that compressing in the preparation method of described integrated circuit Ceramic Substrate Material
Pressure is 140MPa.
The preparation side of a kind of integrated circuit Ceramic Substrate Material the most according to claim 3
Method, it is characterised in that first by height in the preparation method of described integrated circuit Ceramic Substrate Material
Temperature sintering furnace temperature rises a height of 810 DEG C, then high temperature sintering furnace temperature is increased to 980 DEG C,
3h is sintered at a temperature of Gai；Last rising by high temperature sintering furnace temperature again is 1080 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510101055.6A CN104710165B (en) | 2015-03-06 | 2015-03-06 | A kind of integrated circuit Ceramic Substrate Material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510101055.6A CN104710165B (en) | 2015-03-06 | 2015-03-06 | A kind of integrated circuit Ceramic Substrate Material and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104710165A CN104710165A (en) | 2015-06-17 |
| CN104710165B true CN104710165B (en) | 2016-09-21 |
Family
ID=53409965
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510101055.6A Active CN104710165B (en) | 2015-03-06 | 2015-03-06 | A kind of integrated circuit Ceramic Substrate Material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104710165B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105110772A (en) * | 2015-07-24 | 2015-12-02 | 合肥凯士新材料贸易有限公司 | High temperature creep-resistant flake alumina porous ceramic used for LED lamp heat dissipation, and preparation method thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5837274B2 (en) * | 1980-08-26 | 1983-08-15 | 工業技術院長 | High strength composite sintered material |
| CN1087010C (en) * | 1998-11-26 | 2002-07-03 | 河北工业大学 | Method of mfg. high thermal conductivity integrated circuit aluminum nitride ceramic substrate by curtain coating process |
| US20040166603A1 (en) * | 2003-02-25 | 2004-08-26 | Carley L. Richard | Micromachined assembly with a multi-layer cap defining a cavity |
| CN103819195B (en) * | 2013-12-30 | 2015-08-26 | 莱鼎电子材料科技有限公司 | Add the method that high heat conduction aluminium nitride ceramic substrate prepared by tri compound agglutinant |
-
2015
- 2015-03-06 CN CN201510101055.6A patent/CN104710165B/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN104710165A (en) | 2015-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106467396B (en) | A kind of preparation method of on-deformable large scale aluminum nitride ceramic substrate | |
| CN104725050B (en) | Method for preparing high-heat-conductivity aluminum nitride ceramics by self-propagating powder | |
| US9655237B2 (en) | Silicon nitride substrate and method for producing silicon nitride substrate | |
| CN104310976B (en) | A kind of High-abrasion-resisthigh-temperature-resceramic high-temperature-resceramic ceramic | |
| CN101734923A (en) | Aluminum nitride porous ceramic and preparation method thereof | |
| CN104302021B (en) | A kind of for electrically heated heater and preparation technology thereof | |
| JP6251381B2 (en) | Channel member and semiconductor module | |
| CN105340075A (en) | Mobile terminal | |
| CN105400977A (en) | Preparing method for aluminum base silicon carbide | |
| CN102336523A (en) | High thermal conductivity rare earth/AIN/microcrystalline glass composite material and its preparation method | |
| KR101552636B1 (en) | Heat-conducting sheet and manufacturing method thereof | |
| CN104710165B (en) | A kind of integrated circuit Ceramic Substrate Material and preparation method thereof | |
| CN104788083A (en) | Alumina ceramic ring having high thermal shock resistance and used for polycrystalline silicon reduction furnace as well as preparation method | |
| CN106631042A (en) | Manufacturing process of preparing silicon nitride ceramic circuit board | |
| JP5928896B2 (en) | Silicon nitride sintered body, silicon nitride substrate using the same, and manufacturing method thereof | |
| EP3376536A1 (en) | Flow path member and semiconductor module | |
| CN107365155A (en) | A kind of low-temperature sintering adjuvant system of aluminium nitride ceramics | |
| JP2015164184A (en) | Silicon nitride substrate, circuit board including the same, and electronic apparatus | |
| CN105777081A (en) | Preparation technology of electronic ceramic substrate for heat dissipation | |
| CN108178618B (en) | 99 aluminum oxide ceramic and preparation method thereof | |
| CN105693223A (en) | Electronic ceramic substrate for heat dissipation | |
| CN205843358U (en) | A kind of magnesium alloy is smelted and is used electromagnetic energy-saving smelting furnace | |
| CN107937790A (en) | A kind of alumina-based ceramic metal material and preparation method thereof | |
| CN107277946A (en) | A kind of refractory ceramics heating plate | |
| CN110628223A (en) | Heat-conducting filler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210219 Address after: 214100 2-5, Sunken Plaza West, No.777, Jianshe West Road, Binhu District, Wuxi City, Jiangsu Province Patentee after: Wuxi langpuda Technology Co.,Ltd. Address before: 215200 Lao Wu Tong Highway, Songling Town, Wujiang District, Suzhou, Jiangsu Patentee before: WUJIANG HUACHENG COMPOSITE MATERIAL SCIENCE & TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right |