CN104701635B - The quasi-optical power combing of Terahertz and amplifying device - Google Patents
The quasi-optical power combing of Terahertz and amplifying device Download PDFInfo
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- CN104701635B CN104701635B CN201510062048.XA CN201510062048A CN104701635B CN 104701635 B CN104701635 B CN 104701635B CN 201510062048 A CN201510062048 A CN 201510062048A CN 104701635 B CN104701635 B CN 104701635B
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Abstract
The present invention relates to a kind of quasi-optical power combing of Terahertz and amplifying device.Including Microwave emission electromagnetic horn, main parabolic reflector microscope group A, secondary parabolic reflector microscope group A ', microwave amplification array chip, Terahertz frequency multiplication array chip, main parabolic reflector microscope group B, secondary parabolic reflector microscope group B ' and the quasi-optical receiver of superhet Terahertz.The spherical electromagnetic wave signal of space feed-in is converted to plane wave signal and transmitted to microwave using main parabolic reflector microscope group A and secondary parabolic reflector microscope group A ' and amplifies array chip, realizes amplification and output.Microwave signal transmission after amplification realizes frequency multiplication and output to Terahertz frequency multiplication array chip.Terahertz signal after frequency multiplication, in space combination high-power signal in the form of wave beam focuses on, is received by main parabolic reflector microscope group B and secondary parabolic reflector microscope group B ' structure by the quasi-optical receiver of Terahertz.Can be with the terahertz signal of output high-power using the quasi-optical power combining structures, simple in construction, debugging is conveniently.
Description
Technical field
The present invention relates to the quasi-optical power combing of Terahertz and amplifying device, is that one kind is applied to Terahertz frequency specifically
The high efficiency space power synthesis of section and amplifying technique field.
Background technology
With the development of science and technology, the system of Terahertz frequency range due to its transmission signal capacity it is big, it is compact-sized and
Have the characteristics that higher resolution ratio is more and more applied in fields such as microwave remote sensing, medical imaging, radar, space communications.
But the development of Terahertz Technology is also faced with many difficulties.First, as frequency constantly raises, such as waveguide, micro- of various transmission lines
Size all be present and diminish, increase is lost, bears the shortcomings of power reduces, difficulty of processing is big and cost is high in band etc..Second, Terahertz
The optical characteristics of electromagnetic wave gradually shows, and traditional full-wave electromagnetic field research method limitation occurs, it is necessary to complete by quasi-optical theory
It is kind.Therefore in the case where existing structure and processing and manufacturing technology can not meet needs, seek it is a kind of it is simple in construction, inexpensive,
Design and process the quasi-optical power combing of simple Terahertz and amplifying device is particularly important.
The content of the invention
The present invention for current Terahertz frequency range radiant power it is low the problem of, there is provided a kind of quasi-optical power combing of Terahertz with
Amplifying device, it amplifies battle array by microwave horn transmitting antenna, main parabolic mirror A, secondary parabolic mirror A ', N levels microwave
Row chip, Terahertz frequency multiplication array chip, main parabolic mirror B, secondary parabolic mirror B ' and superhet Terahertz are quasi-optical
Receiver forms.The microwave spherical wave signal of microwave horn transmitting antenna feed-in is anti-through secondary parabolic mirror A ' and main parabola
Mirror A is penetrated in space-focusing, microwave planar ripple signal is transformed to and is transferred to N levels microwave amplification array chip.Microwave planar ripple is believed
Number amplified step by step and by Terahertz frequency multiplication array chip by the microwave signal after amplification by N levels microwave amplification array chip in space
Frequency multiplication to Terahertz frequency range exports.The terahertz signal of output is through main parabolic mirror B and secondary parabolic mirror B ' in sky
Between secondary focusing, realize space power synthesis, the Terahertz plane wave of space propagation is propagated in the form of Gaussian beam, finally by
The quasi-optical receiver reception signal of superhet Terahertz.
To realize above-mentioned purpose, the technical solution adopted in the present invention is：
A kind of quasi-optical power combing of Terahertz and amplifying device of the present invention, including microwave horn transmitting antenna, main parabolic
Face speculum A, secondary parabolic mirror A ', N levels microwave amplification array chip, Terahertz frequency multiplication array chip, main parabola are anti-
Penetrate mirror B, secondary parabolic mirror B ' and the quasi-optical receiver of superhet Terahertz；N is natural number；That is N levels microwave amplification array core
Piece include the first order microwave amplification array chip, the second level microwave amplification array chip ..., N levels microwave amplification array core
Piece；
Described microwave horn transmitting antenna radiation microwave spherical wave signal is transmitted to secondary parabolic mirror A ', main parabolic
Face speculum A；
Described main parabolic mirror A and secondary parabolic mirror A ' is converted to the microwave spherical wave signal of feed-in micro-
Ripple plane wave signal；
Described first order microwave amplification array chip is made up of m × n subelement, and each subelement is integrated with microwave and connect
Receive antenna, microwave coupling microstrip line, microwave amplifiercation circuit and microwave radiation gap；Wherein, microwave antenna be used to receive
The signal of secondary parabolic mirror A ' feed-ins, microwave amplifiercation circuit be used to amplify signal.The microwave coupling of chip front side is micro-
Microwave radiation gap of the signal that microwave amplifiercation circuit amplifies coupled to chip back is exported with line.
The later microwave amplification array chip in the described second level is made up of m × n subelement, and each subelement is integrated with
Microwave coupling microstrip line, microwave amplifiercation circuit and microwave radiation gap；Before wherein one section of microwave coupling microstrip line is used for coupling
The signal of level microwave radiation gap output, microwave amplifiercation circuit be used to amplify signal.Another section of microwave coupling microstrip line will
The signal of microwave amplifiercation circuit amplification exports coupled to the microwave radiation gap of chip back.The microwave amplifies array chip N levels
Cascade operation, every grade of chip are spaced at equal intervals, and microwave signal is put step by step in space propagation and the array chip that is cascaded by N levels
Greatly, effective link gain had so both been ensure that, in turn ensure that power output.M is natural number, and n is natural number；
The Terahertz frequency multiplication array chip is placed in after N levels microwave amplification array chip cascade structure, single by p × q son
Member composition, each subelement are integrated with microwave coupling microstrip line, Terahertz frequency multiplier, Terahertz one and divide the power splitters such as M and M individual too
Hertzion radiation gap.Wherein, microwave coupling microstrip line is used for the microwave signal for coupling the output of prime microwave radiation gap, terahertz
Hereby frequency multiplier is used for microwave signal frequency multiplication to terahertz signal, and Terahertz one divides the power splitters such as M to export frequency multiplier too
Hertz signal is divided into M roads coherent signal, and Terahertz one divides the M roads Terahertz coupled microstrip line of the power splitters such as M to believe Terahertz
Number coupled to chip back M terahertz emission gap output.P is natural number, and q is natural number；
Described main parabolic mirror B and secondary parabolic mirror B ' focus on Terahertz plane wave signal, with Gauss
The form of wave beam realizes quasi-optical power combing；
The described quasi-optical receiver of superhet Terahertz is used to receive terahertz signal；
The present invention solves the problems, such as that Terahertz frequency range radiant power is low.
Microwave horn transmitting antenna radiation microwave spherical wave signal transmits anti-to main parabolic mirror A and secondary parabola
Penetrate mirror A '；
The microwave spherical wave signal of feed-in is converted to plane by the main parabolic mirror A and secondary parabolic mirror A '
Ripple signal output；
N levels microwave amplification array chip includes first order microwave amplification array chip, second level microwave amplification array
Chip, the third level microwave amplification array chip ..., N levels microwave amplification array chip；
Wherein, first order microwave amplification array chip is made up of m × n subelement, and each subelement is on dielectric substrate
It is integrated with microwave antenna, microwave coupling microstrip line, microwave amplifiercation circuit and microwave radiation gap；In the front of dielectric substrate
There are microwave antenna, microwave amplifiercation circuit and microwave coupling microstrip line；There is microwave radiation gap at the back side of dielectric substrate, it is micro-
Wave radiation gap and microwave coupling microstrip line are into cross orthogonality relation；
Microwave antenna receives the signal of feed-in, then transmits a signal to microwave amplifiercation circuit, microwave amplifiercation circuit
Exported after being amplified to the signal received and give microwave coupling microstrip line, microwave coupling microstrip line couples a signal to microwave spoke
Gap is penetrated, microwave radiation gap couples a signal to the second level microwave amplification positive first paragraph microwave coupling micro-strip of array chip
Line；
Second level microwave amplification array chip is made up of m × n subelement, and each subelement is integrated with dielectric substrate
First paragraph microwave coupling microstrip line, microwave amplifiercation circuit, second segment microwave coupling microstrip line and microwave radiation gap；In medium base
There are first paragraph microwave coupling microstrip line, microwave amplifiercation circuit and second segment microwave coupling microstrip line in the front of piece；In dielectric substrate
The back side have a microwave radiation gap, microwave radiation gap and second segment microwave coupling microstrip line are into cross orthogonality relation；First paragraph
The microwave radiation gap at microwave coupling microstrip line and the first order microwave amplification array chip back side is into cross orthogonality relation；
The signal that first paragraph microwave coupling microstrip line will be coupled into is transferred to microwave amplifiercation circuit, microwave amplifiercation circuit docking
The signal received exports after being amplified gives second segment microwave coupling microstrip line, and second segment microwave coupling microstrip line couples signal
To microwave radiation gap, microwave radiation gap couples a signal to next stage microwave amplification array chip；
Third level microwave amplification array chip ..., N-1 levels microwave amplification array chip and second level microwave amplify battle array
The structure and transmission means all same of row chip；
It is identical with the structure of second level microwave amplification array chip that N levels microwave amplifies array chip；Transmission means is as follows：
The signal that first paragraph microwave coupling microstrip line will be coupled into is transferred to microwave amplifiercation circuit, microwave amplifiercation circuit docking
The signal received exports after being amplified gives second segment microwave coupling microstrip line, and second segment microwave coupling microstrip line couples signal
To microwave radiation gap, microwave radiation gap couples a signal to the microwave coupling microstrip line of Terahertz frequency multiplication array chip；
The Terahertz frequency multiplication array chip is made up of p × q subelement, and each subelement is integrated with micro- on dielectric substrate
Ripple coupled microstrip line, Terahertz frequency multiplier, Terahertz one divide the power splitters such as M and M terahertz emission gap；
There are microwave coupling microstrip line, Terahertz frequency multiplier and Terahertz one to divide the power splitters such as M in the front of dielectric substrate；
There is M terahertz emission gap at the back side of dielectric substrate, and M terahertz emission gap is divided in the power splitters such as M with Terahertz one
Terahertz coupled microstrip line corresponds and into cross orthogonality relation；
The signal that microwave coupling microstrip line will be coupled into is transferred to Terahertz frequency multiplier, and Terahertz frequency multiplier is by signal frequency multiplication
To Terahertz frequency range, terahertz signal is exported, and the terahertz signal of output is transferred to Terahertz one and divides the power splitters such as M, too
Terahertz signal is divided into M roads coherent signal by the power splitters such as one point of M of hertz, and M roads constant amplitude coherent signal is coupled to it one by one
Corresponding terahertz emission gap；Terahertz emission gap exports terahertz signal.
The terahertz that described main parabolic mirror B and secondary parabolic mirror B ' export Terahertz frequency multiplication array chip
Hereby plane wave signal is converted to the Gaussian beam of focusing, realizes space power synthesis；
The described quasi-optical receiver of superhet Terahertz is located at secondary parabolic mirror B ' focal point, receives main parabola
Speculum B and secondary parabolic mirror B ' focusing synthesis after terahertz signal.
The quasi-optical power combing of Terahertz and amplifying device, the amplifying device include main parabolic mirror A and secondary parabola
Speculum A ', first order microwave amplification array chip, second level microwave amplification array chip, third level microwave amplification array core
Piece ..., N levels microwave amplification array chip, Terahertz frequency multiplication array chip and main parabolic mirror B and secondary parabola it is anti-
Penetrate mirror B '；
Wherein, first order microwave amplification array chip is made up of m × n subelement, and each subelement is on dielectric substrate
It is integrated with microwave antenna, microwave coupling microstrip line, microwave amplifiercation circuit and microwave radiation gap；In the front of dielectric substrate
There are microwave antenna, microwave amplifiercation circuit and microwave coupling microstrip line；There is microwave radiation gap at the back side of dielectric substrate, it is micro-
Wave radiation gap and microwave coupling microstrip line are into cross orthogonality relation；
The microwave signal launched positioned at the emission source of secondary parabolic mirror A ' focal points passes through secondary parabolic reflector successively
Received after mirror A ' and main parabolic mirror A reflection by microwave antenna, microwave antenna transmits a signal to microwave
Amplifying circuit, microwave amplifiercation circuit exports after being amplified to the signal received gives microwave coupling microstrip line, and microwave coupling is micro-
Band line couples a signal to microwave radiation gap, and microwave radiation gap is coupling a signal to second level microwave amplification array chip just
The first paragraph microwave coupling microstrip line in face；
Second level microwave amplification array chip is made up of m × n subelement, and each subelement is integrated with dielectric substrate
First paragraph microwave coupling microstrip line, microwave amplifiercation circuit, second segment microwave coupling microstrip line and microwave radiation gap；In medium base
There are first paragraph microwave coupling microstrip line, microwave amplifiercation circuit and second segment microwave coupling microstrip line in the front of piece；In dielectric substrate
The back side have a microwave radiation gap, microwave radiation gap and second segment microwave coupling microstrip line are into cross orthogonality relation；First paragraph
The microwave radiation gap at microwave coupling microstrip line and the first order microwave amplification array chip back side is into cross orthogonality relation；
The signal that first paragraph microwave coupling microstrip line will be coupled into is transferred to microwave amplifiercation circuit, microwave amplifiercation circuit docking
The signal received exports after being amplified gives second segment microwave coupling microstrip line, and second segment microwave coupling microstrip line couples signal
To microwave radiation gap, microwave radiation gap couples a signal to next stage microwave amplification array chip；
Third level microwave amplification array chip ..., N-1 levels microwave amplification array chip and second level microwave amplify battle array
The structure and transmission means all same of row chip；
It is identical with the structure of second level microwave amplification array chip that N levels microwave amplifies array chip；Transmission means is as follows：
The signal that first paragraph microwave coupling microstrip line will be coupled into is transferred to microwave amplifiercation circuit, microwave amplifiercation circuit docking
The signal received exports after being amplified gives second segment microwave coupling microstrip line, and second segment microwave coupling microstrip line couples signal
To microwave radiation gap, microwave radiation gap couples a signal to the microwave coupling microstrip line of Terahertz frequency multiplication array chip；
Terahertz frequency multiplication array chip is made up of p × q subelement, and each subelement is integrated with microwave on dielectric substrate
Coupled microstrip line, Terahertz frequency multiplier, Terahertz one divide the power splitters such as M and M terahertz emission gap；
There are microwave coupling microstrip line, Terahertz frequency multiplier and Terahertz one to divide the power splitters such as M in the front of dielectric substrate；
There is M terahertz emission gap at the back side of dielectric substrate, and M terahertz emission gap is divided in the power splitters such as M with Terahertz one
Terahertz coupled microstrip line corresponds and into cross orthogonality relation；
The signal that microwave coupling microstrip line will be coupled into is transferred to Terahertz frequency multiplier, and Terahertz frequency multiplier is by signal frequency multiplication
To Terahertz frequency range, terahertz signal is exported, and the terahertz signal of output is transferred to Terahertz one and divides the power splitters such as M, too
Terahertz signal is divided into M roads coherent signal by the power splitters such as one point of M of hertz, and M roads constant amplitude coherent signal divides M by Terahertz one
It is coupled to and its one-to-one M terahertz emission gap Deng the Terahertz coupled microstrip line in power splitter；Terahertz emission
Gap exports terahertz signal successively after main parabolic mirror B and secondary parabolic mirror B ' reflections by positioned at secondary parabolic
The receiving device of face speculum B ' focal points receives.
Beneficial effect
With synthesizing, loss is small, bears power height, difficult processing compared with the power synthetic technique of routine for device of the invention
Spend the advantages that relatively low, synthesis way is more, working frequency range is wide.
The microwave coupling between line and microwave radiation gap, the microwave radiation gap of the prime chip back and rear class core
Between the positive microwave coupling microstrip line of piece, Terahertz coupled microstrip line and the Terahertz that the Terahertz one divides in the power splitters such as M
Between radiating slot by the way of orthogonal coupling transmission signal, so reduce coupling loss, improve efficiency of transmission；
Microwave amplification array chip is integrated with m × n subelement, is easy to realize that each son is single by stable process meanses
The requirement of uniformity between member；
N levels microwave amplification array chip cascade structure realizes microwave signal power space and amplified step by step, both ensure that
Amplify the actual gain of link, improve power output again；
The Terahertz frequency multiplication array chip is integrated with p × q subelement, and each subelement includes the power splitters such as one point of M, and
The M roads coherent terahertz signal after work(point will be waited to be exported coupled to chip back terahertz emission gap, so increase terahertz
Hereby signal radiation gap quantity, improves radiant power；
The main parabolic mirror A and secondary parabolic mirror A ' utilizes the principle that parabolic mirror focuses on by microwave ball
Face ripple signal is converted to microwave planar ripple signal；The main parabolic mirror B and secondary parabolic mirror B ' utilize quasi-optical technique
Terahertz plane wave signal is focused to the terahertz signal of Gaussian beam form by the principle that principle and parabolic mirror focus on,
Space power synthesis is realized, improves the power output of Terahertz frequency range device.
The characteristic of quasi-optical power combing wave beam principle quasi-optical with amplification network integration and parabolic mirror, signal is synthesized
With amplification, with synthesizing, loss is small, it is high to bear power, difficulty of processing is relatively low, synthesis compared with the power synthetic technique of routine
The advantages that way is more, working frequency range is wide.In summary the reason for, this patent be intended to disclose a kind of quasi-optical power combing of Terahertz with
Amplify network.
Reflective type device generally is selected in the design of quasi-optical network, its clear superiority is no absorption loss, simultaneously
Reflection loss very little can even be ignored.Much to power efficiency needs it is very high in the case of, it is quasi-optical to generally select speculum
Network.The speculum of quasi-optical network system generally has two kinds：Ellipsoidal mirror and parabolic mirror.Ellipsoidal mirror pair
Gaussian beam has good control characteristic and is easily achieved conversion without difference characteristic, parabolic mirror and obtains almost plane ripple
Gaussian beam.
Brief description of the drawings
Fig. 1 is the quasi-optical power combing of Terahertz and amplifying device composition schematic diagram of the present invention；
Fig. 2 is the structural representation that the chip of the present invention is fixed by metallic carrier；
Fig. 3 a are the front views of the first order microwave amplification array chip in the embodiment of the present invention；
Fig. 3 b are the rearviews of the first order microwave amplification array chip in the embodiment of the present invention；
Fig. 4 a are the positive structure schematics of the first order microwave amplification array chip in the embodiment of the present invention；
Fig. 4 b are the structure schematic diagrams of the first order microwave amplification array chip in the embodiment of the present invention；
Fig. 5 a are the front views of the second level microwave amplification array chip in the embodiment of the present invention；
Fig. 5 b are the rearviews of the second level microwave amplification array chip in the embodiment of the present invention；
Fig. 6 a are the positive structure schematics of the second level microwave amplification array chip in the embodiment of the present invention；
Fig. 6 b are the structure schematic diagrams of the second level microwave amplification array chip in the embodiment of the present invention；
Fig. 7 a are the front views of the Terahertz frequency multiplication array chip in the embodiment of the present invention；
Fig. 7 b are the rearviews of the Terahertz frequency multiplication array chip in the embodiment of the present invention；
Fig. 8 a are the positive structure schematics of the Terahertz frequency multiplication array chip in the embodiment of the present invention；
Fig. 8 b are the structure schematic diagrams of the Terahertz frequency multiplication array chip in the embodiment of the present invention；
Fig. 9 is assembling schematic diagram of the array chip on radiating carrier in the present invention；
Figure 10 is the process schematic that microwave passes through array chip in the embodiment of the present invention.
Embodiment
The present invention is further illustrated with example below in conjunction with the accompanying drawings.It is noted that the embodiment is considered merely as
Improving eyesight, rather than limitation of the present invention.
Embodiment
As shown in Fig. 1 and Figure 10, a kind of quasi-optical power combing of Terahertz and amplifying device, the device include microwave horn hair
Penetrate antenna, main parabolic mirror A, secondary parabolic mirror A ', first order microwave amplification array chip, the amplification of second level microwave
Array chip, third level microwave amplification array chip, Terahertz frequency multiplication array chip, main parabolic mirror B, secondary parabola are anti-
Penetrate mirror B ' and the quasi-optical receiver of superhet Terahertz；
Microwave horn transmitting antenna is located at secondary parabolic mirror A ' focal point；
The quasi-optical receiver of superhet Terahertz is located at secondary parabolic mirror B ' focal point, receives main parabolic mirror
B and secondary parabolic mirror B ' focusing synthesis after terahertz signal.
Microwave horn transmitting antenna radiation microwave spherical wave signal transmits to secondary parabolic mirror A ' and main throwing successively
Parabolic mirror A；
The microwave spherical wave signal of feed-in is converted to plane wave letter by main parabolic mirror A and secondary parabolic mirror A '
Number output；
As shown in Fig. 4 (a) and Fig. 4 (b), first order microwave amplification array chip is made up of 4 × 4 subelements, per height
Unit is integrated with microwave antenna, microwave coupling microstrip line, microwave amplifiercation circuit and microwave radiation gap on dielectric substrate；
There are microwave antenna, microwave amplifiercation circuit and microwave coupling microstrip line in the front of dielectric substrate；At the back side of dielectric substrate
There are microwave radiation gap, microwave radiation gap and microwave coupling microstrip line into cross orthogonality relation；
Microwave antenna receives main parabolic mirror A and the microwave planar ripple letter of secondary parabolic mirror A ' feed-ins
Number, microwave amplifiercation circuit is then transmitted a signal to, microwave amplifiercation circuit is exported to micro- after being amplified to the signal received
Ripple coupled microstrip line, microwave coupling microstrip line couple a signal to microwave radiation gap, and microwave radiation gap couples a signal to
The second level microwave amplification positive first paragraph microwave coupling microstrip line of array chip；
Described main parabolic mirror A and the microwave signal frequency of secondary parabolic mirror A ' feed-ins are 83GHz, power
PMWFor 20dBm；
Microwave signal frequency after microwave amplifiercation circuit amplifies is 83GHz, power 25dBm；
As shown in Fig. 6 (a) and Fig. 6 (b), microwave amplification array chip in the second level is made up of 4 × 4 subelements, per height
Unit is integrated with first paragraph microwave coupling microstrip line, microwave amplifiercation circuit, second segment microwave coupling microstrip line on dielectric substrate
With microwave radiation gap；There are first paragraph microwave coupling microstrip line, microwave amplifiercation circuit and second segment micro- in the front of dielectric substrate
Ripple coupled microstrip line；There are microwave radiation gap, microwave radiation gap and second segment microwave coupling micro-strip at the back side of dielectric substrate
Line is into cross orthogonality relation；First paragraph microwave coupling microstrip line and the microwave radiation at the first order microwave amplification array chip back side stitch
Gap is into cross orthogonality relation；
The signal that first paragraph microwave coupling microstrip line will be coupled into is transferred to microwave amplifiercation circuit, microwave amplifiercation circuit docking
The signal received exports after being amplified gives second segment microwave coupling microstrip line, and second segment microwave coupling microstrip line couples signal
To microwave radiation gap, microwave radiation gap couples a signal to next stage microwave amplification array chip；
As shown in Figure 10, the microwave signal frequency after microwave amplifiercation circuit amplifies be 83GHz, power be
30dBm；
Second level microwave amplification array chip is made up of 4 × 4 subelements, and each subelement is integrated with dielectric substrate
First paragraph microwave coupling microstrip line, microwave amplifiercation circuit, second segment microwave coupling microstrip line and microwave radiation gap；In medium base
There are first paragraph microwave coupling microstrip line, microwave amplifiercation circuit and second segment microwave coupling microstrip line in the front of piece；In dielectric substrate
The back side have a microwave radiation gap, microwave radiation gap and second segment microwave coupling microstrip line are into cross orthogonality relation；First paragraph
The microwave radiation gap at microwave coupling microstrip line and the first order microwave amplification array chip back side is into cross orthogonality relation；
The signal that first paragraph microwave coupling microstrip line will be coupled into is transferred to microwave amplifiercation circuit, microwave amplifiercation circuit docking
The signal received exports after being amplified gives second segment microwave coupling microstrip line, and second segment microwave coupling microstrip line couples signal
To microwave radiation gap, microwave radiation gap couples a signal to the microwave coupling microstrip line of Terahertz frequency multiplication array chip；
The described microwave signal frequency after microwave amplifiercation circuit amplifies is 83GHz, power 35dBm；
As shown in Fig. 8 (a) and Fig. 8 (b), Terahertz frequency multiplication array chip is made up of 4 × 4 subelements, each subelement
Microwave coupling microstrip line, the frequency multiplier of Terahertz 3, one point of fourth class power splitter of Terahertz and four terahertzs are integrated with dielectric substrate
Hereby radiating slot, all terahertz emission gaps on Terahertz frequency multiplication array chip form 8 × 8 gap arrays；
There are one point of microwave coupling microstrip line, the frequency multiplier of Terahertz 3 and Terahertz fourth class power splitter in the front of dielectric substrate；
There are four terahertz emission gaps at the back side of dielectric substrate, fourth class power splitter is divided in four terahertz emission gaps with Terahertz one
In Terahertz coupled microstrip line correspond and into cross orthogonality relation；
The signal that microwave coupling microstrip line will be coupled into is transferred to the frequency multiplier of Terahertz 3, and the frequency multiplier of Terahertz 3 is by signal times
Frequently to Terahertz frequency range, frequency multiplication loss Δ P is 15dB, exports 252GHz terahertz signal, and by the 252GHz of output too
Hertz signal is transferred to one point of fourth class power splitter of Terahertz, and terahertz signal is divided into four tunnels by one point of fourth class power splitter of Terahertz
Coherent signal, four tunnel constant amplitude coherent signals are coupled to and its one-to-one terahertz emission gap；Terahertz emission gap is defeated
Go out the Terahertz plane wave signal that power P THz is 20dBm, 20dBm Terahertz plane wave signal transmits to main parabola successively
Speculum B and secondary parabolic mirror B ', main parabolic mirror B and secondary parabolic mirror B ' are by Terahertz plane wave signal
Focus beam is converted to, transmission loss 5dB, realizes space power synthesis, the signal power after synthesis is 15dBm；
Above-mentioned all microwave coupling micro belt line widths are 20 μm, and impedance is 50Ohm.
Microwave amplifiercation circuit in above-mentioned three-level microwave amplification array chip is mesh power amplifying circuit in GaN；
The described frequency multiplier of Terahertz 3 uses GaAs Schottky diodes, and frequency multiplication loss is 15dB；
Compared with no 3 grades of microwaves amplification array chip, the device can improve 15dB Terahertz power amplification.
Above-mentioned first order microwave amplifies array chip, second level microwave amplification array chip, third level microwave amplification battle array
Row chip and Terahertz frequency multiplication array chip are fixed by metallic carrier respectively, as shown in Figure 2；The edge of metallic carrier has
Positioning guide rail groove, the groove of metallic carrier are consistent with the size of array chip；
Shown in front view such as Fig. 3 (a) and Fig. 3 (b) of first order microwave amplification array chip on metallic carrier；
Shown in front view such as Fig. 5 (a) and Fig. 5 (b) of second level microwave amplification array chip on metallic carrier；
Shown in front view such as Fig. 7 (a) and Fig. 7 (b) of Terahertz frequency multiplication array chip on metallic carrier；
Three-level microwave amplifies array chip and Terahertz frequency multiplication array chip by conductive adhesive on radiating carrier, such as
Shown in Fig. 9, radiating carrier uses AlN materials, and radiating carrier can carry out preferable thermal expansion matching and heat transfer with chip.
It the foregoing is only presently preferred embodiments of the present invention, every impartial change made within the scope of the invention as claimed
Change and modify, the covering scope of the claims in the present invention all should be belonged to.
Claims (3)
1. the quasi-optical power combing of Terahertz and amplifying device, it is characterised in that：The amplifying device include main parabolic mirror A and
Secondary parabolic mirror A ', first order microwave amplification array chip, second level microwave amplification array chip, the amplification of third level microwave
Array chip ..., N levels microwave amplification array chip, Terahertz frequency multiplication array chip and main parabolic mirror B and secondary throw
Parabolic mirror B '；
Wherein, first order microwave amplification array chip is made up of m × n subelement, and each subelement integrates on dielectric substrate
Microwave antenna, microwave coupling microstrip line, microwave amplifiercation circuit and microwave radiation gap；Have in the front of dielectric substrate micro-
Ripple reception antenna, microwave amplifiercation circuit and microwave coupling microstrip line；There are microwave radiation gap, microwave spoke at the back side of dielectric substrate
Gap and microwave coupling microstrip line are penetrated into cross orthogonality relation；
The microwave signal launched positioned at the emission source of secondary parabolic mirror A ' focal points passes through secondary parabolic mirror A ' successively
Received after reflection with main parabolic mirror A by microwave antenna, microwave antenna transmits a signal to microwave amplification
Circuit, microwave amplifiercation circuit exports after being amplified to the signal received gives microwave coupling microstrip line, microwave coupling microstrip line
Microwave radiation gap is coupled a signal to, it is positive that microwave radiation gap couples a signal to second level microwave amplification array chip
First paragraph microwave coupling microstrip line；
Second level microwave amplification array chip is made up of m × n subelement, and each subelement is integrated with first on dielectric substrate
Section microwave coupling microstrip line, microwave amplifiercation circuit, second segment microwave coupling microstrip line and microwave radiation gap；In dielectric substrate
There are first paragraph microwave coupling microstrip line, microwave amplifiercation circuit and second segment microwave coupling microstrip line in front；In the back of the body of dielectric substrate
There are microwave radiation gap, microwave radiation gap and second segment microwave coupling microstrip line in face into cross orthogonality relation；First paragraph microwave
The microwave radiation gap at coupled microstrip line and the first order microwave amplification array chip back side is into cross orthogonality relation；
The signal that the first paragraph microwave coupling microstrip line of second level microwave amplification array chip will be coupled into is transferred to microwave amplification
Circuit, microwave amplifiercation circuit exports after being amplified to the signal received gives second segment microwave coupling microstrip line, and second segment is micro-
Ripple coupled microstrip line couples a signal to the microwave radiation gap of second level microwave amplification array chip, and microwave radiation gap will believe
Number coupled to next stage microwave amplification array chip；
Third level microwave amplification array chip ..., N-1 levels microwave amplification array chip and second level microwave amplify array core
The structure and transmission means all same of piece；
It is identical with the structure of second level microwave amplification array chip that N levels microwave amplifies array chip；Transmission means is as follows：
The signal that the first paragraph microwave coupling microstrip line of N levels microwave amplification array chip will be coupled into is transferred to microwave amplification electricity
Road, microwave amplifiercation circuit exports after being amplified to the signal received gives second segment microwave coupling microstrip line, second segment microwave
Coupled microstrip line couples a signal to the microwave radiation gap of N levels microwave amplification array chip, and microwave radiation gap is by signal
Coupled to the microwave coupling microstrip line of Terahertz frequency multiplication array chip；
Terahertz frequency multiplication array chip is made up of p × q subelement, and each subelement is integrated with microwave coupling on dielectric substrate
Microstrip line, Terahertz frequency multiplier, Terahertz one divide the power splitters such as M and M terahertz emission gap；
There are microwave coupling microstrip line, Terahertz frequency multiplier and Terahertz one to divide the power splitters such as M in the front of dielectric substrate；In medium
There are M terahertz emission gap, the terahertz that M terahertz emission gap is divided in the power splitters such as M with Terahertz one in the back side of substrate
Hereby coupled microstrip line corresponds and into cross orthogonality relation；
The signal that the microwave coupling microstrip line of Terahertz frequency multiplication array chip will be coupled into is transferred to Terahertz frequency multiplier, Terahertz
The terahertz signal of output is transferred to Terahertz by signal frequency multiplication to Terahertz frequency range, output terahertz signal by frequency multiplier
The power splitters such as one point of M, Terahertz one divide the power splitters such as M that terahertz signal is divided into M roads coherent signal, M roads constant amplitude coherent letter
Number be coupled to and its one-to-one terahertz emission gap；Terahertz emission gap output terahertz signal passes through main throwing successively
By being connect positioned at the receiving device of secondary parabolic mirror B ' focal points after parabolic mirror B and secondary parabolic mirror B ' reflections
Receive.
2. the quasi-optical power combing of Terahertz according to claim 1 and amplifying device, it is characterised in that：Receiving device is super
The quasi-optical receiver of heterodyne Terahertz.
3. the quasi-optical power combing of Terahertz according to claim 1 and amplifying device, it is characterised in that：Emission source is microwave
Horn launch antenna.
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