CN104701244B

CN104701244B - Method for filling through hole

Info

Publication number: CN104701244B
Application number: CN201310661878.5A
Authority: CN
Inventors: 刘超
Original assignee: Semiconductor Manufacturing International Shanghai Corp
Current assignee: Semiconductor Manufacturing International Shanghai Corp
Priority date: 2013-12-09
Filing date: 2013-12-09
Publication date: 2018-05-11
Anticipated expiration: 2033-12-09
Also published as: CN104701244A

Abstract

Present invention is disclosed a kind of method for filling through hole, including front-end architecture is provided, formed with through hole in the front-end architecture；First gas, which is passed through, according to the first ratio carries out first set reaction with second gas；It is passed through buffer gas；First gas is passed through according to the second ratio and carries out the second secondary response with second gas, to form metal film.By carrying out between first set reaction and the second secondary response, buffer gas is passed through, can be prevented in the second secondary response, the film layer that reacting gas forms first set reaction causes to damage, it is ensured that the quality of filling, improves yield.

Description

Method for filling through hole

Technical field

The present invention relates to technical field of semiconductors, more particularly to a kind of through hole filling side in through hole manufacturing process Method.

Background technology

With development of requirement of the people to electronic product to directions such as miniaturization, multi-functional, environment-friendly types, people make great efforts to seek Ask and more do electronic system smaller, integrated level is higher and higher, and function the more is done the more more.Thereby produce many new technologies, new material Designed with new, for example, the technology such as Stacked Die Packaging technology and system in package is exactly the Typical Representative of these technologies.The former Abbreviation 3D encapsulation technologies, refer on the premise of package body sizes are not changed, and are stacked in same packaging body in vertical direction The encapsulation technology of two or more chip.

In numerous 3D encapsulation technologies, silicon hole（Through-Silicon Via, abbreviation TSV）Technology is to grind now The hot spot studied carefully, TSV technology have following advantage：Interconnection length can shorten to it is equal with chip thickness, using vertical stacking The logic module of logic module substitution level distribution；RC retardation ratio and inductive effect are substantially reduced, improves digital data transmission speed With the transmission of microwave；Realize the connection of high density, high-aspect-ratio.

But although the introducing of TSV technology brings the progress of technique, how to be filled using this advantage, so as to obtain More preferable effect is obtained, is not well solved still but.As shown in Figure 1, it is to carry out method for filling through hole in the prior art Flow chart.Including：

Step S1, is passed through WF6 and SiH4 gases, and layer of metal film is formed with reaction；

Step S2, changes the ratio of WF6 and SiH4, increases the dosage of WF6, to continuously form layer of metal film.It is however, logical The metal film often formed in S1 is unstable, and the WF6 increased in S2 is easy to impact newly formed metal film simultaneously Damage, react afterwards with other materials, so as to produce addition product, the interconnection line mass resulted in declines, and makes Obtain resistance value to become higher, thus have impact on the yield of product.

The content of the invention

It is an object of the present invention to provide a kind of method for filling through hole, with improve easily lead in the prior art to be formed it is mutual The problem of connection quality is poor.

In order to solve the above technical problems, the present invention provides a kind of method for filling through hole, including：

Front-end architecture is provided, formed with through hole in the front-end architecture；

First gas, which is passed through, according to the first ratio carries out first set reaction with second gas；

It is passed through buffer gas；

First gas is passed through according to the second ratio and carries out the second secondary response with second gas, to form metal film.

Optionally, for the method for filling through hole, the first gas and second gas are WF respectively₆And SiH₄, institute It is identical with the volume of second gas for first gas to state the first ratio.

Optionally, for the method for filling through hole, the duration of the first set reaction is 3-10s.

Optionally, for the method for filling through hole, the buffer gas is SiH₄, the flow of the buffer gas is 10-100sccm, duration 10-30s.

Optionally, it is second gas for the volume of first gas for the method for filling through hole, second ratio Three times of volume.

Optionally, for the method for filling through hole, the duration of second reaction is 5-20s.

Optionally, for the method for filling through hole, the progress first set reaction, be passed through buffer gas and carry out the Temperature range residing for secondary response is 400-500 DEG C.

Optionally, for the method for filling through hole, after metal film is formed, further include：

Metal derby is formed in through-holes.

Optionally, for the method for filling through hole, the material of the metal derby is tungsten, using WF₆With H₂React shape Into.

Optionally, for the method for filling through hole, further include：

Ensure that the diameter for providing the spray head venthole of gas is less than or equal to 430 μm.

Compared with prior art, it is anti-in progress first set reaction and second in method for filling through hole provided by the invention Between answering, buffer gas is passed through, so as to prevent in the second secondary response, the film layer that reacting gas forms first set reaction Cause to damage, also just prevented the generation of other chain reactions.Compared with prior art, it can be ensured that the quality of filling, prevents shape Into interconnection line bottom form other materials, also allow for resistance value and controlled, improve yield.

Brief description of the drawings

Fig. 1 is the flow chart of method for filling through hole in the prior art；

Fig. 2 is the flow chart of method for filling through hole in the present invention.

Embodiment

The method for filling through hole of the present invention is described in more detail below in conjunction with schematic diagram, which show this hair Bright preferred embodiment, it should be appreciated that those skilled in the art can change invention described herein, and still realize this hair Bright advantageous effects.Therefore, description below is appreciated that for the widely known of those skilled in the art, and is not intended as Limitation of the present invention.

For clarity, whole features of practical embodiments are not described.In the following description, it is not described in detail known function And structure, because they can make the present invention chaotic due to unnecessary details.It will be understood that opening in any practical embodiments In hair, it is necessary to a large amount of implementation details are made to realize the specific objective of developer, such as according to related system or related business Limitation, another embodiment is changed into by one embodiment.Additionally, it should think that this development is probably complicated and expends Time, but it is only to those skilled in the art routine work.

More specifically description is of the invention by way of example referring to the drawings in the following passage.Will according to following explanation and right Book is sought, advantages and features of the invention will become apparent from.It should be noted that attached drawing is using very simplified form and using non- Accurately ratio, only for the purpose of facilitating and clarifying the purpose of the embodiments of the invention.

The core concept of the present invention is, there is provided a kind of method for filling through hole.Inventor has found in long-term work, adopts With the filling process of the prior art, for the through hole with high-aspect-ratio, easily there is yield in obtained product It is low, found through analysing in depth, it is abnormal mainly due to interconnection line, and this is because using the prior art method when reacting gas WF₆Destroy newly formed metal film, and with caused by the substance reaction of other layers.Therefore, it has been recognised by the inventors that should be for the first time After having reacted, take measures to prevent WF excessive in second₆Via bottoms are impacted, then can improve filling quality.

The preferred embodiment of the method for filling through hole is exemplified below, with clear explanation present disclosure, it should be clearly that , present disclosure is not restricted to following embodiments, other pass through the routine techniques hand of those of ordinary skill in the art Section is improved also within the thought range of the present invention.

Based on above-mentioned thought, the present invention provides one kind and is applied to method for filling through hole, including：

Step S101：Front-end architecture is provided, formed with through hole in the front-end architecture；The front-end architecture is, for example, to include Cmos device on substrate is formed, the through hole connects the corresponding construction of the cmos device, is used to be formed in the through hole There is interconnection line, electrically conducted with reaching.

Step S102：First gas, which is passed through, according to the first ratio carries out first set reaction with second gas；In the present embodiment In, utilize WF₆And SiH₄Respectively as first gas and second gas, tungsten is produced by the reaction of the two, as first layer Metal film, so that follow-up tungsten continuously forms on this basis.The first ratio of the present embodiment is first gas and the The volume of two gases is identical, the time of the two sustained response 3-10s, is advisable with being 400-500 DEG C in temperature range, is, for example, Sustained response 5s, temperature is such as 400 DEG C, 425 DEG C, 440 DEG C of selected as.Preferably, before being reacted, can make in advance Obtain SiH₄Preheating is decomposed into Si and H₂, be so conducive to the progress of reaction.

Step S103：It is passed through buffer gas；The step is mainly the first set reaction for considering to carry out in step s 102 Be easy to due to react it is insufficient caused by first layer metal film quality it is poor, followed by the second secondary response in, Substantial amounts of WF can be passed through₆, so that substantial amounts of WF₆The first layer metal film for enabling to be formed in step S102 is destroyed, therefore, By being passed through buffer gas, the space of through hole is occupied, it becomes possible to effectively prevent WF₆Entrance via bottoms.In the present embodiment In, the buffer gas used is SiH₄, so avoid and introduce the third gas, can effectively play a protective role, and Cost-effective effect can be reached.

Preferably, the flow of the buffer gas is 10-100sccm, and duration 10-30s, temperature range is in 400- 500 DEG C are advisable, such as are passed through the WF that flow is 10sccm₆Continue 20s, reaction temperature is maintained at carrying out first set reaction phase With or close to.

Then step S104 is carried out：First gas, which is passed through, according to the second ratio carries out the second secondary response with second gas, with Form metal film.In this step, second ratio is three times of second gas volume for the volume of first gas, and due to The presence of buffer gas, i.e., effectively block WF₆Into bottom, and can be after stop and WF₆Reaction, so that More metals are continuously formed on first metal film so that the metal film quality of formation is more preferable so that resistance WF₆The ability of impact It is improved, then continuously forms metal derby on this basis and just ensured.In the present embodiment, second reaction continues Time is 5-20s, such as the 10s times, reaction temperature it is identical when being maintained at carrying out first set reaction or close to.

Then, step S105 is further included, after metal film is formed, forms metal derby in through-holes.The material of the metal derby Expect to use WF for tungsten, the present embodiment₆With H₂Reaction is formed.Wherein H₂Can be the product in reaction before, with save into This.

By the further research of inventor, the size for finding to provide the diameter of the spray head venthole of gas can also influence Filling process, especially influences first set reaction and the second secondary response, here, the diameter is limited to less than by the present embodiment In 430 μm, so that coutroi velocity.This limitation can be detected in the periodic maintenance of equipment, and be replaced at any time.

Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art God and scope.In this way, if these modifications and changes of the present invention belongs to the scope of the claims in the present invention and its equivalent technologies Within, then the present invention is also intended to comprising including these modification and variations.

Claims

A kind of 1. method for filling through hole, it is characterised in that including：

Front-end architecture is provided, formed with through hole in the front-end architecture；

According to 1:1 volume ratio is passed through WF₆Gas and SiH₄Gas carries out first set reaction, to be formed on the through-hole wall First layer metal film；

It is passed through buffer gas SiH₄, prevent first layer metal film to be destroyed；

According to 3:1 volume ratio is passed through WF₆Gas and SiH₄Gas carries out the second secondary response, to be formed on the through-hole wall Metal film.
2. method for filling through hole as claimed in claim 1, it is characterised in that the duration of the first set reaction is 3- 10s。
3. method for filling through hole as claimed in claim 1, it is characterised in that the flow of the buffer gas is 10- 100sccm, duration 10-30s.
4. method for filling through hole as claimed in claim 1, it is characterised in that the duration of second secondary response is 5- 20s。
5. the method for filling through hole as described in any one in claim 1-4, it is characterised in that the progress is anti-for the first time Temperature range residing for, should being passed through the second secondary response of buffer gas and progress is 400-500 DEG C.
6. method for filling through hole as claimed in claim 1, it is characterised in that according to 3:1 volume ratio is passed through WF₆Gas with SiH₄Gas carries out the second secondary response, after forming metal film on the through-hole wall, further includes：

Metal derby is formed in through-holes.
7. method for filling through hole as claimed in claim 6, it is characterised in that the material of the metal derby is tungsten, using WF₆With H₂Reaction is formed.
8. method for filling through hole as claimed in claim 1, it is characterised in that further include：

Ensure that the diameter for providing the spray head venthole of gas is less than or equal to 430 μm.