CN104699141B - Sensor device and method for controlling temperature by same - Google Patents
Sensor device and method for controlling temperature by same Download PDFInfo
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- CN104699141B CN104699141B CN201410717734.1A CN201410717734A CN104699141B CN 104699141 B CN104699141 B CN 104699141B CN 201410717734 A CN201410717734 A CN 201410717734A CN 104699141 B CN104699141 B CN 104699141B
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- temperature
- voltage
- sensor device
- film
- monitoring
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1917—Control of temperature characterised by the use of electric means using digital means
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
Abstract
The invention provides a sensor device and a method for controlling temperature by the sensor device, and the device can properly control a heater based on results of temperature of a sensor element monitored by a resistor element used for temperature monitoring. In a magnetic sensor device, a switching element is controlled according to comparison results of temperature detection voltage of divided voltage in a bleeder circuit and control target voltage, so as to control power-on of a resistive film (heater) used for heating. Before the magnetic sensor device leaves factory, a process of applying constant voltage control target voltage setting on the bleeder circuit, and a microcomputer calculates temperature detection voltage when the resistive film used for temperature monitoring is in a preset temperature based on environment temperature when applying constant voltage on the bleeder circuit, temperature detection voltage when applying constant voltage on the bleeder circuit, resistance value of a divider resistor, and temperature coefficient of the resistance value of the resistive film used for temperature monitoring, and the calculation result of the temperature detection voltage is set as the control target voltage.
Description
Technical field
The present invention relates to a kind of arrange the sensor device of having heaters and using the sensor in sensor element
The method that device controls temperature.
Background technology
In sensor device, using sensor element the physical quantity of detection object is measured.For example, with magnetoresistive element
Magnet sensor arrangement in, detect change of the magnetic field with the rotation etc. of permanent magnet, and detect position of permanent magnet etc. (for example,
Referenced patent document 1).
The testing result of sensor changes according to temperature mostly.For example, for the magnetoresistive element of magnet sensor arrangement
Or for Hall element sense magnetic film resistance value changed according to temperature.Here, constituting bridgt circuit by sense magnetic film
In the case of, even if causing resistance change due to temperature change, so long as change it is each sense magnetic film in it is equal, then also not
Exporting change can be produced.However, in magnet sensor arrangement, for example, even if in the case where bridgt circuit is constituted by sense magnetic film,
If temperature changes, detection error can be also produced.Although its reason also not clearly, can speculate that its reason is：In unit
Part substrate is different according to the position of device substrate with the impact of the stress caused because thermal coefficient of expansion is different in sense magnetic film, or
The film quality of sense magnetic film is different according to the position of device substrate.Therefore, present inventor is studied heater and temperature
Monitoring element is arranged at sensor element, and the monitored results based on monitoring temperature element control heater, so that passing
The temperature of sensor component keeps constant.
On the other hand, as using the monitoring temperature method of element testing temperature, it is proposed that technical scheme below：By heat
The monitoring of quick resistance equitemperature is connected to constitute bleeder circuit with element with fixed resistance, is compared the two ends to bleeder circuit and is applied permanent
By the value (temperature detection voltage) of monitoring temperature element and fixed resistance partial pressure and reference voltage (referenced patent document during pressure
2)。
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2012-118000 publications
Patent document 2：Japanese Unexamined Patent Publication 2008-111761 publications
The content of the invention
Invent technical problem to be solved
However, in the technology described in patent document 2, there is problems with：Used by the monitoring of thermistor equitemperature
, using in the case of partial pressure, the testing result of temperature is due to the deviation of the resistance value of monitoring temperature element for element and fixed resistance
And produce deviation.Particularly in the case where resistive element is used as into monitoring temperature element, there is problems with：Due to using
The big resistive element of the temperature coefficient of resistance value, therefore resistance value is also easy to produce deviation.Therefore, use via monitoring temperature even if being based on
The output control heater that resistive element is detected, sensor element can not be set as the temperature of regulation.
In view of problem above, the problem of the present invention be one kind is provided can be based on being supervised with resistive element by monitoring temperature
Sensor device and utilize sensor device that the result of the temperature of control sensor element is suitably controlled to heater
The method of control temperature.
Solve the technical scheme that technical problem is adopted
In order to solve above-mentioned problem, sensor device involved in the present invention is characterised by, including：Device substrate, its
It is provided with sensor element；Monitoring temperature resistive element, the temperature of its monitoring sensor element；Heater, its heating
The sensor element；Bleeder circuit, the divider resistance of the bleeder circuit and monitoring temperature resistive element series electrical
Connection, and the two ends of the bleeder circuit are applied in constant pressure；Comparator, it will be in the bleeder circuit by the temperature
The temperature detection voltage of monitoring resistive element and the divider resistance partial pressure is compared with control targe voltage；Power control
Portion, its be based on compare in the comparator obtained by the comparative result energization that controls to the heater；And miniature calculating
Machine, its using the monitoring temperature resistive element is actual be changed into preset temperature when the temperature detection voltage as the control
Target voltage is exported to the comparator.
In sensor device involved in the present invention, if the temperature of sensor element changes, monitoring temperature is used
The resistance value of resistive element changes, by monitoring temperature resistive element and the temperature of divider resistance partial pressure in bleeder circuit
Degree detection voltage also changes.Therefore, if by power control portion based on C.T detection voltage in a comparator with
Comparative result obtained by control targe voltage controls the energization to heater, it becomes possible to which the temperature of sensor element is maintained into established practice
Fixed temperature.Here, by microcomputer to comparator output control target voltage, microcomputer is by monitoring temperature electricity consumption
The temperature detection voltage that resistance element is actual when being changed into preset temperature is as control targe voltage output to comparator.Therefore, even if
The resistance value of monitoring temperature resistive element has deviation, and microcomputer also actual with monitoring temperature resistive element will be changed into pre-
If the corresponding temperature detection voltage of resistance value during temperature as control targe voltage output to comparator, even if therefore temperature supervise
The resistance value of control resistive element has deviation, it is also possible to suitably control the temperature of sensor element.
The present invention is effective when being applied to that the monitoring temperature resistive element is the situation of monitoring temperature resistive film
's.In the case where monitoring temperature uses resistive film with resistive element, the resistance value of monitoring temperature resistive element is also easy to produce partially
Difference.However, in the present invention, even if the resistance value of monitoring temperature resistive element has deviation, microcomputer also will be with temperature
The corresponding temperature detection voltage of resistance value that monitoring resistive element is actual when being changed into preset temperature is defeated as control targe voltage
Go out to comparator.Therefore, even if the resistance value of monitoring temperature resistive element has deviation, it is also possible to suitably control sensor unit
The temperature of part.
In the present invention, it is preferred to the monitoring temperature resistive film is formed at the device substrate.By such structure,
It is capable of the temperature of suitably monitoring sensor element.
In the present invention, it is preferred to the microcomputer is based on to the environment temperature during bleeder circuit applying constant pressure
Degree, the temperature detection voltage to during the bleeder circuit applying constant pressure, the resistance value of the divider resistance and institute
The temperature coefficient for stating the resistance value of monitoring temperature resistive film is calculated when the monitoring temperature resistive film is changed into preset temperature
The temperature detection voltage, and using the result of calculation of the temperature detection voltage as the control targe voltage output to described
Comparator.In monitoring temperature resistive element, even if resistance value has deviation, the deviation of the temperature coefficient of resistance value is also minimum.
Therefore, as long as can apply constant pressure to obtain temperature detection voltage to bleeder circuit at a certain temperature, it becomes possible to based at that time
Environment temperature, the resistance value of divider resistance and monitoring temperature resistive film resistance value temperature coefficient, accurately count
Calculation monitoring temperature resistive film is changed into temperature detection voltage during predetermined temperature.Therefore, as long as such calculating is tied
Really as control targe voltage output to comparator, even if the resistance value of monitoring temperature resistive element has deviation, it is also possible to suitable
The temperature of locality control sensor element.
In the present invention, it is preferred to the microcomputer has the Temperature measuring section of the measurement environment temperature.By this
The structure of sample, even if not using the thermometer of outside, it is also possible to calculate control targe voltage.
In the present invention, it is preferred to have the memory for storing the control targe voltage.
In the present invention, the institute determined before the sensor device dispatches from the factory that is stored with which memory can be adopted
State the structure of control targe voltage.
In the present invention, it would however also be possible to employ be stored with which memory after the sensor device dispatches from the factory advance
The structure of the control targe voltage that the time point specified determines.
In the present invention, it is preferred to the heater is the heating electric resistance film for being formed at the device substrate.By so
Structure, being capable of efficiently heating sensor element.
In the present invention, the knot that the device substrate and the microcomputer are installed on same circuit board can be adopted
Structure.By such structure, it is prevented from the environment temperature when control targe voltage is calculated and produces with the temperature of sensor element
Big difference.
In the present invention, the sensor element is the magnetic resistance unit for example with the magnetoresistive film for being formed at the device substrate
Part.
In this case, magnet sensor arrangement can adopt the knot of the magnet with rotation opposed with the magnetoresistive element
Structure.
The method of utilization sensor device control temperature involved in the present invention is characterised by, in the sensor device
Such as lower component is set：Device substrate, it is provided with sensor element；Monitoring temperature resistive element, its described sensor of monitoring
The temperature of element；Heater, its described sensor element of heating；Bleeder circuit, the divider resistance of the bleeder circuit with it is described
Monitoring temperature is electrically connected in series with resistive element, and the two ends of the bleeder circuit are applied in constant pressure；Comparator, it will be in institute
State in bleeder circuit by the temperature detection voltage of the monitoring temperature resistive element and the divider resistance partial pressure and control
Target voltage is compared；Power control portion, its be based on compare in the comparator obtained by comparative result control to described
The energization of heater；And microcomputer, its by the monitoring temperature resistive element is actual be changed into preset temperature when institute
Temperature detection voltage is stated as the control targe voltage output to the comparator, the utilization sensor device controls temperature
Method carry out applying the bleeder circuit control targe voltage setting operation of the constant pressure, in the control targe voltage
In setting operation, the microcomputer is based on to the environment temperature during bleeder circuit applying constant pressure, to described point
The temperature detection voltage, the resistance value of the divider resistance and monitoring temperature when volt circuit applies the constant pressure is used
The temperature coefficient calculating monitoring temperature resistive element of the resistance value of resistive element is changed into temperature during preset temperature
Detection voltage, and the result of calculation of the temperature detection voltage is defined as into the control targe voltage.
In the method for utilization sensor device control temperature involved in the present invention, can adopt in sensor dress
Putting carries out the structure that the control targe voltage sets operation before dispatching from the factory.
In the method for utilization sensor device control temperature involved in the present invention, it would however also be possible to employ in the sensor
Device carries out the structure that the control targe voltage sets operation after dispatching from the factory in preassigned time point.
Invention effect
In utilization sensor device involved in the present invention, if the temperature of sensor element changes, temperature prison
The resistance value of control resistive element changes, by monitoring temperature resistive element and divider resistance partial pressure in bleeder circuit
Temperature detection voltage change.Therefore, as long as by power control portion based on C.T detection voltage in a comparator
The energization to heater is controlled with comparative result obtained by control targe voltage, it becomes possible to maintain into the temperature of sensor element
The temperature of regulation.Here, by microcomputer to comparator output control target voltage, microcomputer uses monitoring temperature
The temperature detection voltage that resistive element is actual when being changed into preset temperature is as control targe voltage output to comparator.Therefore, i.e.,
Making the resistance value of monitoring temperature resistive element has deviation, and microcomputer also actual with monitoring temperature resistive element will be changed into
The corresponding temperature detection voltage of resistance value during preset temperature as control targe voltage output to comparator, even if therefore temperature
The resistance value of monitoring resistive element has deviation, it is also possible to suitably control the temperature of sensor element.
Description of the drawings
Fig. 1 is the explanatory diagram of the magnet sensor arrangement for applying the present invention.
Fig. 2 is the explanatory diagram for applying the device substrate that magnet sensor arrangement of the invention is used.
Fig. 3 is the explanatory diagram for illustrating the Cleaning Principle etc. in the magnet sensor arrangement for applying the present invention.
Fig. 4 is the explanatory diagram of the electric structure for illustrating the magnet sensor arrangement for applying the present invention.
Specific embodiment
Hereinafter, refer to the attached drawing, to applying the present invention centered on constituting the magnet sensor arrangement of magnetic-type rotary encoder
Sensor device illustrate.
(structure of magnet sensor arrangement)
Fig. 1 is the explanatory diagram of the magnet sensor arrangement for applying the present invention, and Fig. 1 (a) and Fig. 1 (b) are respectively from axis side
To unilateral observation magnet sensor arrangement stereogram and its exploded view.
Magnet sensor arrangement 10 (rotary encoder) shown in Fig. 1 has：It is fixed on the retainer 6 of motor shell etc.；It is logical
Cross the circuit board 50 that screw 61,62 etc. is fixed on retainer 6；And it is fixed on the magnet 20 of the output shaft of motor etc., magnet 20
Rotate around the axis L by magnetic blow out centre.Magnet 20 is opposed with circuit board 50 in the inner side of retainer 6.In the manner, magnet
20 have the magnetizing surface for being circumferentially formed with a N poles and a S poles.
In the first surface 50a side opposed with magnet 20 of circuit board 50, unit is installed in the position opposed with magnet 20
Part substrate 40, in the position adjacent with device substrate 40 Hall element 81,82 is provided with.It is formed with device substrate 40 described later
Sense magnetic film, the sense magnetic film of rounded configuration is centrally disposed on the rotation axis of magnet.Also, circuit board 50 and magnet
Microcomputer 9, the amplifier portion being made up of amplifier IC are installed on the second surface 50b of the opposition side of 20 opposed sides
30th, switch element 83, comparator 85, memory 99 and connector 59 etc..Circuit board 50 is in phenolic substrate and glass epoxide
Substrate etc. is formed with the printed wiring board of distribution.
(structure of device substrate 40)
Fig. 2 is to apply the explanatory diagram of device substrate 40 that the magnet sensor arrangement 10 of the present invention is used, Fig. 2 (a), figure
2 (b) and Fig. 2 (c) are respectively the explanatory diagrams of the planar structure for illustrating device substrate 40, illustrate the cross section structure of device substrate 40
Explanatory diagram and illustrate device substrate 40 cross section structure variation explanatory diagram.In addition, in Fig. 2 (b) and Fig. 2 (c), showing
Show to meaning the layer knot of magnetoresistive element 4 (sense magnetic film 41-44), monitoring temperature resistive film 47 and heating electric resistance film 48
Structure.Also, in Fig. 2 (a), to the monitoring temperature backslash wire tag of resistive film 47, the positive oblique line of film 48 is hindered to heating electric
Mark.
As shown in Fig. 2 (a), constituting in one side 40a of device substrate 40 has the magnetic with sense magnetic film 41-44 (magnetoresistive film)
Resistance element 4 (sensor element), sense magnetic film 41-44 is constituted by the part mutually turned back and extend in the central authorities of device substrate 40
Circular sense magnetic area 45.In the manner, device substrate 40 is the silicon substrate of the flat shape with quadrangle.
Distribution part integratedly extends from sense magnetic film 41-44, and the end of distribution part is provided with the power supply terminal of A phases
The ground wire terminal GNDA of VccA, A phase, output+A lead-out terminal+A, output-A mutually lead-out terminal-A mutually, B phases are used
Power supply terminal VccB, B phase ground wire terminal GNDB, output+B lead-out terminal+B and output-B mutually output mutually
Terminal-B.
Also, monitoring temperature resistive film 47 (temperature-sensitive portion) and heating are formed with one side 40a of device substrate 40
With resistive film 48 (heater).Here, heating electric hinders film 48 being constituted with extending in four border shapes along the side of device substrate 40
The state of closed loop surrounds the whole region to form thoughts magnetic film 41-44.Therefore, heating electric resistance film 48 and sense magnetic film 41-44 shapes
Into the region staggered on direction in the face of device substrate 40, therefore do not overlap when overlooking.Also, distribution part 481 from plus
Heat is extended with the side in opposite two rim portion of resistive film 48, is formed with for right in the end of distribution part 481
The power supply terminal VccH of the heating electric resistance power supply of film 48.In contrast, the distribution that the opposing party from this two rim portions extends
The end of part 482 is connected with the ground wire terminal GNDA of A phases.Therefore, the ground wire terminal GNDA of A phases be also act as relative to
Heating electric hinders the ground wire terminal GNDH of film 48.Here, distribution part 481 hinders the link position of film 48 and matches somebody with somebody with heating electric
The link position that line part 482 hinders film 48 with heating electric is located relative to feel the position point-symmetrically of magnetic area 45.Therefore, from
The link position that distribution part 481 hinders film 48 with heating electric hinders the link position of film 48 to distribution part 482 and heating electric
It is right around when the length of heating electric resistance film 48 hinder the link position of film 48 to wiring part with from distribution part 481 and heating electric
Points 482 it is left with the link position that heating electric hinders film 48 around when heating electric hinder the equal length of film 48.
Monitoring temperature resistive film 47 is arranged on the heating electric resistance film 48 in the inside region of heating electric resistance film 48
Near an angle in four angles, and between sense magnetic area 45 and heating electric resistance film 48.Monitoring temperature resistive film 47
In the flat shape repeatedly turned back and extend.Therefore, even if occupied area is narrow, it is also possible to form longer monitoring temperature resistance
Film 47.Here, although monitoring temperature is Chong Die with the portion of wiring part branch office of sense magnetic film 44 with resistive film 47, but because monitoring temperature is used
Resistive film 47 is formed in the region staggered on direction in the face of device substrate 40 with sense magnetic area 45, therefore monitoring temperature electricity consumption
Resistance film 47 is not overlap with sense magnetic area 45.The power supply of monitoring temperature is formed with an end of monitoring temperature resistive film 47
Terminal VccS.Also, another end of monitoring temperature resistive film 47 is connected with the ground wire terminal GNDB of B phases.Therefore, B
Ground wire terminal GNDB mutually is also act as the ground wire terminal GNDS relative to monitoring temperature resistive film 47.
Device substrate 40 has the cross section structure shown in Fig. 2 (b), or with the cross section structure shown in Fig. 2 (c).Specifically
For, such as shown in Fig. 2 (b), first, the first insulation being made up of silicon oxide layer is formed with one side 40a of device substrate 40
Film 401, the second dielectric film 402 being made up of silicon oxide layer and the 3rd dielectric film 403 being made up of polyimide resin etc..
In the manner, it is the permalloy film by formation such as sputtering methods to feel magnetic film 41-44, and monitoring temperature is with resistive film 47 and heats
The conducting film that titanium film by formation such as sputtering methods etc. does not show magnetic resistance effect is with resistive film 48.
Here, feeling magnetic film 41-44 with resistive film 47 and heating electric resistance film 48 in sense magnetic film 41-44, monitoring temperature
It is formed in most by the side (lower layer side) of device substrate 40.More specifically, feel magnetic film 41-44 and be formed in device substrate 40 and the
The interlayer of one dielectric film 401.Monitoring temperature resistive film 47 is formed in the interlayer of the first dielectric film 401 and the second dielectric film 402.
Heating electric hinders film 48 and is likewise formed at the interlayer of the dielectric film 401 of device substrate 40 and first with sense magnetic film 41-44.Therefore,
Sense magnetic film 41-44 and heating electric resistance film 48 is formed in same layer, and feel magnetic film 41-44 and monitoring temperature resistive film 47 across
First dielectric film 401 is formed in different layers.
In the mode shown in Fig. 2 (c), the layer that magnetic film 41-44 is also formed in the dielectric film 401 of device substrate 40 and first is felt
Between.Monitoring temperature resistive film 47 is formed in the interlayer of the first dielectric film 401 and the second dielectric film 402.Heating electric hinders film 48
With the interlayer that monitoring temperature resistive film 47 is likewise formed at the first dielectric film 401 and the second dielectric film 402.Therefore, magnetic is felt
Film 41-44 is formed in different layers from monitoring temperature resistive film 47 and heating electric resistance film 48 across the first dielectric film 401,
And monitoring temperature resistive film 47 is formed in same layer with heating electric resistance film 48.
(detailed construction of magnet sensor arrangement 10)
Fig. 3 is to illustrate the explanatory diagram for detecting Cleaning Principle etc. in the magnet sensor arrangement 10 for applying the present invention, Fig. 3
A (), Fig. 3 (b), Fig. 3 (c) and Fig. 3 (d) are respectively the explanatory diagrams of the electric connection structure of the sense magnetic film for illustrating A phases, illustrate B
The explanatory diagram of the electric connection structure of sense magnetic film mutually, from the explanatory diagram of the signal of the output of magnetoresistive element 4 and as illustrating
The explanatory diagram of the relation between the angle position (electric angle) of signal and magnet 20.
In the magnetoresistive element 4 illustrated with reference to Fig. 2, sense magnetic film (A phases (SIN) sense that magnetic film 41-44 is configured to two phases is felt
Magnetic film 41,43 and B phases (COS) sense magnetic film 42,44), the sense magnetic film of described two phases is relative to the magnet 20 shown in Fig. 1 (b)
Phase place mutually have 90 ° of phase differences, device substrate 40 be configured in as shown in Figure 1 the center by magnet 20 axis L (rotation
Central axis) on.Then, magnetic field of the magnetoresistive element 4 with the resistance value of each sense magnetic film 41-44 more than saturation sensitive area is strong
There is the rotating excitation field of the change of direction on direction in the face of magnetizing surface in degree detection.
A phases are felt magnetic film and are had with+A phases (SIN+) the sense magnetic film 43 and-A of the movement of 180 ° of phase difference detection magnet 20
Phase (SIN-) feels magnetic film 41, and B phases are felt magnetic film and had with+B phases (COS+) the sense magnetic of the movement of 180 ° of phase difference detection magnet 20
Film 44 and-B phases (COS-) sense magnetic film 42.
+ A mutually feels magnetic film 43 and-A mutually feels magnetic film 41 and constitutes bridgt circuit shown in Fig. 3 (a), and the one of the bridgt circuit
End is connected with power supply terminal VccA, and the other end is connected with ground wire terminal GNDA.The point midway for mutually feeling magnetic film 43 in+A is provided with
Lead-out terminal+the A of output+A phases, the point midway for mutually feeling magnetic film 41 in-A is provided with the lead-out terminal-A of output-A phases.Also,
+ B mutually feels magnetic film 44 and-B mutually feel magnetic film 42 also mutually feel magnetic film 43 with+A and-A mutually to feel magnetic film 41 identical, constitute Fig. 3 (b)
Shown bridgt circuit, one end of the bridgt circuit is connected with power supply terminal VccB, and the other end is connected with ground wire terminal GNDB.
+ B mutually feels the lead-out terminal+B that the point midway of magnetic film 44 is provided with output+B phases, and the point midway for mutually feeling magnetic film 42 in-B is arranged
There is the lead-out terminal-B of output-B phases.In addition, in figure 3, for convenience's sake, although describe the power end of A phases respectively
The power supply terminal VccB of sub- VccA and B phases, but the power supply terminal VccB of the power supply terminal VccA and B phases of A phases also may be used
To share.Also, in figure 3, for convenience's sake, although describe the ground wire terminal GNDA and B phase of A phases respectively
Ground wire terminal GNDB, but the ground wire terminal GNDB of the ground wire terminal GNDA and B phases of A phases can also share.
(the electric structure of magnet sensor arrangement 10)
Fig. 4 be illustrate apply the present invention magnet sensor arrangement 10 electric structure explanatory diagram, Fig. 4 (a) and Fig. 4 (b)
Be respectively the electric structure for illustrating the entirety of magnet sensor arrangement 10 explanatory diagram and illustrate temperature control electric structure explanation
Figure.
As shown in Fig. 4 (a), magnet sensor arrangement 10 has：Amplifier portion 30 (amplifier portion 30 (+A), amplifier portion 30
(- A), amplifier portion 30 (+B), amplifier portion 30 (- B), the amplifier portion 31,32 of Hall element), it amplifies from element
The output of substrate 40；And microcomputer 9, it has A/D converter sections 91 etc., and microcomputer 9 has to be changed based on Jing A/D
Signal detection magnet 20 rotary angle position and the signal processing part 92 of rotating speed etc..In magnet sensor arrangement 10, in Fig. 1
When the shown rotation of magnet 20 is turned around, from magnetoresistive element 4 export sine wave signal sin shown in Fig. 3 (c) of two periodic quantities,
cos.Therefore, if amplifying sine wave letter by amplifier portion 30 (amplifier portion 30 (+A), 30 (- A), 30 (+B), 30 (- B))
After number sin, cos, data signal is converted into, and such data signal is exported to microcomputer 9, then in microcomputer
Signal processing part 92 tries to achieve the Lissajous figure shown in Fig. 3 (d) in 9.Therefore, if from sine wave signal sin, cos obtain θ=
tan-1(sin/cos), so that it may know the angular position of magnet 20.Also, in the manner, in the Pivot axle from magnet 20
Line (axis L) deviates 90 ° of position and is configured with Hall element 81,82.Therefore, by the combination of the output of Hall element 81,82,
Understand current location is located at which interval of sine wave signal sin, cos.Therefore, magnet sensor arrangement 10 can be based on magnetic resistance
The testing result of element 4 and the testing result of Hall element 81,82 generate the absolute angular position information of magnet 20, so as to
Enough carry out absolute action.
(temperature adjustment of magnetoresistive element 4)
As shown in Fig. 4 (a) and Fig. 4 (b), constituting in the magnet sensor arrangement 10 of the manner has based on monitoring temperature electricity consumption
The resistance variations of resistance film 47 control the power control portion of the power supply that film 48 is hindered to heating electric.More specifically, in device substrate
In 40, the partial pressure being made up of fixed resistance is connected with the power supply terminal VccS of the monitoring temperature of monitoring temperature resistive film 47
Resistance 84, the side contrary with the side for being connected with monitoring temperature resistive film 47 in divider resistance 84 is connected with and is applied with
The power supply terminal VccS0 of the constant pressure of monitoring temperature.In monitoring temperature resistive film 47 be connected with divider resistance 84
The contrary side in side is connected with ground wire terminal GND, and monitoring temperature resistive film 47 is constituted in power end with divider resistance 84
The bleeder circuit 80 connected between sub- VccS0 and ground wire terminal GND.
The power supply terminal VccH that the heating of film 48 is hindered in heating electric is connected with the energization control being made up of bipolar transistor
The switch element 83 of system, by switch element 83 power control portion is constituted.Using with being connected with to heat in switch element 83
The contrary side in the side of resistive film 48 is connected with the power supply terminal VccH0 of the constant pressure for being applied with heater-driven.In heating
Ground wire terminal GND, heating electric resistance are connected with the side contrary with the side for being connected with switch element 83 in resistive film 48
Film 48 is connected with switch element 83 between power supply terminal VccH0 and ground wire terminal GND.
Here, the coupling part of monitoring temperature resistive film 47 and divider resistance 84 is with the comparison being made up of operational amplifier
One terminal connection of device 85, have input for being switched on or switched off becoming for switch element 83 to another terminal of comparator 85
The control targe voltage V0 of threshold value.Therefore, if the temperature of device substrate 40 (magnetoresistive element 4) is reduced, monitoring temperature resistance
The resistance value of film 47 is reduced, so as to pass through the temperature detection voltage of monitoring temperature resistive film 47 and the tie point of divider resistance 84
Can reduce.Now, if temperature detection voltage is lower than the control targe voltage V0 of another terminal of input to comparator 85, compare
Low-voltage and ON switch element 83 are exported compared with device 85, so as to power to heating electric resistance film 48.Therefore, (the sense magnetic of magnetoresistive element 4
Film 41-44) it is heated.
In this state, if the temperature of device substrate 40 rises, monitoring temperature is risen with the resistance value of resistive film 47,
Monitoring temperature resistive film 47 can rise with the temperature detection voltage of the tie point of divider resistance 84.Now, if temperature detection is electric
Pressure ratio is input into high to the control targe voltage V0 of another terminal of comparator 85, then the output HIGH voltage of comparator 85 and open
Element 83 is closed, so as to stop powering to heating electric resistance film 48.Therefore, the temperature of magnetoresistive element 4 (sense magnetic film 41-44) can be tieed up
Hold into the set point of temperature according to regulations such as control targe voltage V0.
(setting of control targe voltage V0)
When above-mentioned temperature control is carried out, control targe voltage V0 is exported to comparator 85 from microcomputer 9.That is,
Control targe voltage configuration part 94 is built-in with microcomputer 9, and the outside of microcomputer 9 is provided with storage control
The memory 99 of target voltage V0 processed, the control targe voltage configuration part 94 of microcomputer 9 will be from depositing by D/A converter sections 93
The control targe voltage V0 that reservoir 99 reads is converted to after analog signal from data signal, is exported to comparator 85.Here, in magnetic
In the control targe voltage setting operation that sensor device 10 is implemented before dispatching from the factory, by each setting control mesh of magnet sensor arrangement 10
Mark voltage V0.
More specifically, because monitoring temperature is larger using the temperature coefficient of resistance value with the grade of resistive film 47 resistive element
Resistive element, thus it is different from divider resistance 84, and the resistance value of each magnet sensor arrangement 10 (each device substrate 40) is easily produced
Raw deviation.Particularly in the manner, due to by monitoring temperature with resistive film 47 be used as monitoring temperature resistive element, therefore with
Block resistive element is compared as divider resistance 84, and the resistance value of each magnet sensor arrangement 10 (each device substrate 40) is easy
Produce deviation.Therefore, in the manner, before magnet sensor arrangement 10 dispatches from the factory, to every in control targe voltage setting operation
The calculating monitoring temperature of individual magnet sensor arrangement 10 resistive film 47 is actually changed into temperature detection voltage during preset temperature, will so
Result of calculation be defined as control targe voltage V0, and be stored in memory 99.
Also, in the manner, it is determined that during control targe voltage V0, making operational part 96 and Temperature measuring section 97 built-in
In microcomputer 9, in control targe voltage setting operation, the measurement result and operational part 96 based on Temperature measuring section 97
Operation result determine control targe voltage V0, and be stored in memory 99.
Target temperature is being set to into 70 DEG C, the constant pressure of the monitoring temperature applied to the two ends of bleeder circuit 80 is being set to
Vc, by the temperature coefficient of monitoring temperature resistive film 47 α (Ω/DEG C) is set to, and the resistance of divider resistance 84 is set to into the situation of Rc
Under, the content that such control targe voltage sets operation is illustrated.First, it is right before magnet sensor arrangement 10 dispatches from the factory
The two ends of bleeder circuit 80 apply constant pressure Vc of monitoring temperature, detect monitoring temperature resistive film 47 and divider resistance now
The temperature detection voltage Va of 84 tie pointta, also, environment temperature ta now is detected by Temperature measuring section 97.
As a result, operational part 96 obtains the resistance of the monitoring temperature resistive film 47 when temperature is ta by following formula
Value Rsta。
Vata=Rsta×(Vc/(Rsta+Rc))
Rsta=Vata×((Rsta+Rc)/Vc)
Rsta=(Vata×Rc)/(Vc-Vata)
Here, even if magnet sensor arrangement 10 or device substrate 40 are different, the monitoring temperature temperature coefficient α of resistive film 47
Also it is constant, therefore resistance value R of monitoring temperature resistive film 47 of temperature when being 70 DEG C70For Rsta×(1+(α×(70-ta))。
Therefore, operational part 96 can calculate temperature detection voltage Va when temperature is 70 DEG C according to following formula70, thus control targe is electric
Temperature detection voltage Va when temperature is 70 DEG C by pressure configuration part 9470Result of calculation be stored in as control targe voltage V0
In reservoir 99.
Va70=Vc × R70/(R70+Rc)
But, R70=Rsta×(1+(α×(70-ta))
Therefore, after magnet sensor arrangement 10 dispatches from the factory, can in magnet sensor arrangement 10 based on be actually formed
Monitoring temperature controls temperature with the corresponding control targe voltage V0 of resistance value of resistive film 47.
(main efficacy results of the manner)
It is as described above, in the magnet sensor arrangement 10 of the manner, if the temperature of magnetoresistive element 4 changes, temperature
The resistance value of degree monitoring resistive film 47 changes, by monitoring temperature resistive film 47 and partial pressure electricity in bleeder circuit 80
The temperature detection voltage for hindering 84 partial pressures also changes.Therefore, as long as (the power control of switch element 83 for passing through power control
Portion) control to be used to heating based on the C.T detection voltage in comparator 85 and comparative result obtained by control targe voltage V0
The energization of resistive film 48 (heater), it becomes possible to which the temperature of magnetoresistive element 4 is maintained into into the temperature of regulation.Therefore, magnetoresistive element 4
Testing result be difficult to be affected by environment temperature.
Also, in the manner, before magnet sensor arrangement 10 dispatches from the factory, carry out applying bleeder circuit 80 control of constant pressure Va
Target voltage processed sets operation.In such control targe voltage setting operation, microcomputer 9 is based on to bleeder circuit 80
Apply constant pressure Va when environment temperature Ta (temperature of microcomputer 9), to bleeder circuit 80 apply constant pressure Va when temperature inspection
The resistance value and monitoring temperature for surveying voltage and divider resistance 84 calculates temperature with the temperature coefficient α of the resistance value of resistive film 47
Monitoring resistive film 47 is changed into temperature detection voltage during preset temperature (for example, 70 DEG C), and by the meter of the temperature detection voltage
Calculate result and be defined as control targe voltage V0, and be stored in memory 99.Then, after magnet sensor arrangement 10 dispatches from the factory, than
Compared with device 85 by each magnet sensor arrangement 10 set appropriate control targe voltage V0 on the basis of controlling switch element 83
(power control portion).Therefore, even if the resistance value of the monitoring temperature resistive film 47 in each magnet sensor arrangement 10 has deviation,
Also the temperature of magnetoresistive element 4 can suitably be controlled.Particularly in the manner, due to monitoring temperature resistive film 47 being used as
Monitoring temperature resistive element, thus while resistance value is also easy to produce deviation, but as long as passing through the manner, it becomes possible to suitably control
The temperature of magnetoresistive element 4.
Also, in the manner, because monitoring temperature resistive film 47 and magnetoresistive element 4 are formed at same device substrate
40, therefore, it is possible to suitably monitor the temperature of magnetoresistive element 4.Also, because the heating electric that will be formed in device substrate 40 hinders
Film 48 is used as heater, therefore, it is possible to efficiently heat magnetoresistive element 4.
Temperature measuring section 97 of the microcomputer 9 with measuring environment temperature is additionally, since, even if therefore not using outside
Thermometer, it is also possible to calculate control targe voltage V0.
Also, because device substrate 40 and microcomputer 9 are arranged on same circuit board 50, therefore, it is possible to prevent
During setting control targe voltage V0, environment temperature produces big difference with the temperature of magnetoresistive element 4.
Also, because magnet sensor arrangement 10 has the magnet 20 with the opposed rotation of magnetoresistive element 4, it is thus possible to by sky
Gas flows as magnet 20 rotates, and the heat for making heating electric resistance film 48 equably spreads all over magnetoresistive element 4.Therefore, it is possible to logical
Cross the temperature that heating electric resistance film 48 accurately controls magnetoresistive element 4.
(another embodiment)
In the above-described embodiment, although before magnet sensor arrangement 10 dispatches from the factory, it is controlled target voltage setting operation
To set control targe voltage V0, but it is also possible to after magnet sensor arrangement 10 dispatches from the factory, controlled in preassigned time point
Target voltage processed sets operation to set control targe voltage V0.For example, it is also possible to the action in magnet sensor arrangement 10 stops
Afterwards, it is controlled target voltage in the time point for making the action of magnet sensor arrangement 10 again and sets operation, so as to sets control targe
Voltage V0.
(another other embodiment)
In the above-described embodiment, although as sensor device exemplified with magnet sensor arrangement 10, but it is also possible to incite somebody to action this
Invention is applied to the other sensors device such as light sensor arrangement.
In the above-described embodiment, although used as monitoring temperature resistive element and heater and be formed at element
The resistive film (monitoring temperature resistive film 47 and heating electric resistance film 48) of substrate 40, but it is also possible to using on circuit board 50
It is equiped with the structure of monitoring temperature resistive element and heater.
Label declaration
4 magnetoresistive elements (sensor element)；
6 retainers；
9 microcomputers；
10 magnet sensor arrangements (sensor device)；
40 device substrates；
41-44 feels magnetic film；
47 monitoring temperatures are with resistive film (monitoring temperature resistive element)；
48 heating electrics resistance film (heater)；
50 circuit boards；
84 divider resistances；
80 bleeder circuits；
83 switch elements (power control portion)；
85 comparators；
92 signal processing parts；
94 control targe voltage configuration parts；
96 operational parts；
97 Temperature measuring sections；
99 memories.
Claims (16)
1. a kind of sensor device, it is characterised in that include：
Device substrate, it is provided with sensor element；
Monitoring temperature resistive element, the temperature of its monitoring sensor element；
Heater, its described sensor element of heating；
Bleeder circuit, the divider resistance of the bleeder circuit is electrically connected in series with the monitoring temperature with resistive element, and institute
The two ends for stating bleeder circuit are applied in constant pressure；
Comparator, its by the bleeder circuit by the monitoring temperature resistive element and the divider resistance partial pressure
Temperature detection voltage is compared with control targe voltage；
Power control portion, its be based on compare in the comparator obtained by the comparative result energization that controls to the heater；
And
Microcomputer, its by the monitoring temperature resistive element is actual be changed into preset temperature when the temperature detection voltage
As the control targe voltage output to the comparator,
The monitoring temperature resistive element is monitoring temperature resistive film,
The monitoring temperature resistive film is formed at the device substrate,
The microcomputer is applied based on environment temperature when applying the constant pressure to the bleeder circuit, to the bleeder circuit
Plus the temperature detection voltage during constant pressure, the resistance value of the divider resistance and the monitoring temperature resistive film
The temperature coefficient calculating monitoring temperature resistive film of resistance value is changed into temperature detection voltage during preset temperature, and will
The result of calculation of the temperature detection voltage is as the control targe voltage output to the comparator.
2. sensor device according to claim 1, it is characterised in that
The microcomputer has the Temperature measuring section of the measurement environment temperature.
3. sensor device according to claim 2, it is characterised in that
The sensor device has the memory of the storage control targe voltage.
4. sensor device according to claim 3, it is characterised in that
Be stored with which memory the control targe voltage determined before the sensor device dispatches from the factory.
5. sensor device according to claim 4, it is characterised in that
The heater is the heating electric resistance film for being formed at the device substrate.
6. sensor device according to claim 5, it is characterised in that
The device substrate is installed on same circuit board with the microcomputer.
7. sensor device according to claim 3, it is characterised in that
Be stored with which memory after the sensor device dispatches from the factory the control determined in preassigned time point
Target voltage.
8. sensor device according to claim 7, it is characterised in that
The heater is the heating electric resistance film for being formed at the device substrate.
9. sensor device according to claim 8, it is characterised in that
The device substrate is installed on same circuit board with the microcomputer.
10. sensor device as claimed in any of claims 1 to 9, it is characterised in that
The sensor element is the magnetoresistive element with the magnetoresistive film for being formed at the device substrate.
11. sensor devices according to claim 10, it is characterised in that
The sensor device has the magnet of rotation opposed with the magnetoresistive element.
12. sensor devices according to claim 1, it is characterised in that
The sensor device has the memory of the storage control targe voltage.
13. sensor devices according to claim 12, it is characterised in that
Be stored with which memory the control targe voltage determined before the sensor device dispatches from the factory.
The method that a kind of 14. utilization sensor devices control temperature, it is characterised in that
In the sensor device, such as lower component is set：
Device substrate, it is provided with sensor element；
Monitoring temperature resistive element, the temperature of its monitoring sensor element；
Heater, its described sensor element of heating；
Bleeder circuit, the divider resistance of the bleeder circuit is electrically connected in series with the monitoring temperature with resistive element, and institute
The two ends for stating bleeder circuit are applied in constant pressure；
Comparator, its by the bleeder circuit by the monitoring temperature resistive element and the divider resistance partial pressure
Temperature detection voltage is compared with control targe voltage；
Power control portion, its be based on compare in the comparator obtained by the comparative result energization that controls to the heater；
And
Microcomputer, its by the monitoring temperature resistive element is actual be changed into preset temperature when the temperature detection electricity
Press as the control targe voltage output to the comparator,
The method of the utilization sensor device control temperature carries out applying the bleeder circuit control targe of the constant pressure
Voltage sets operation,
In control targe voltage setting operation, the microcomputer is based on and applies the constant pressure to the bleeder circuit
When environment temperature, to the bleeder circuit apply the constant pressure when the temperature detection voltage, the divider resistance electricity
The temperature coefficient of the resistance value of resistance and the monitoring temperature resistive element calculates the monitoring temperature and is become with resistive element
For preset temperature when the temperature detection voltage, and the result of calculation of the temperature detection voltage is defined as into the control mesh
Mark voltage.
The method that 15. utilization sensor devices according to claim 14 control temperature, it is characterised in that
Before the sensor device dispatches from the factory, the control targe voltage setting operation is carried out.
16. the method that utilization sensor device according to claim 14 controls temperature, it is characterised in that
After the sensor device dispatches from the factory, in preassigned time point the control targe voltage setting operation is carried out.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-249798 | 2013-12-03 | ||
| JP2013249798A JP6344908B2 (en) | 2013-12-03 | 2013-12-03 | Sensor device and temperature control method in sensor device |
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| CN104699141A CN104699141A (en) | 2015-06-10 |
| CN104699141B true CN104699141B (en) | 2017-05-17 |
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| JP (1) | JP6344908B2 (en) |
| KR (1) | KR101661813B1 (en) |
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| CN106998201B (en) * | 2016-01-22 | 2020-06-09 | 清华大学 | Optical identification switch device |
| CN106152251A (en) * | 2016-08-15 | 2016-11-23 | 珠海格力电器股份有限公司 | gear control method, circuit and electric heater |
| CN106196269B (en) * | 2016-08-16 | 2019-03-08 | 珠海格力电器股份有限公司 | The control circuit and control method of electric heater |
| CN111591043A (en) * | 2020-05-14 | 2020-08-28 | 上海世麦智能科技有限公司 | Stepping motor speed control method based on thermal printer and thermal printer |
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| US4216371A (en) * | 1978-03-03 | 1980-08-05 | Compagnie D'electronique Et De Piezoelectricite C.E.P.E. | Device for heat regulation of an enclosure particularly for oscillating piezoelectric crystal, and enclosure comprising such a device |
| CN1548934A (en) * | 2003-05-07 | 2004-11-24 | 刘正洪 | Temperature sensor, its temperature detecting circuit and method |
| CN1695066A (en) * | 2002-11-29 | 2005-11-09 | 雅马哈株式会社 | Magnetic sensor and temperature dependency characteristic compensation method for the same |
| CN102257383A (en) * | 2008-12-22 | 2011-11-23 | 罗伯特·博世有限公司 | Sensor array comprising a temperature probe |
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| JPH02298814A (en) * | 1989-05-13 | 1990-12-11 | Aisan Ind Co Ltd | Rotational angle sensor |
| JP2869910B2 (en) * | 1992-08-28 | 1999-03-10 | 株式会社村田製作所 | Magnetic sensor device |
| JP3185424B2 (en) * | 1992-12-22 | 2001-07-09 | カシオ電子工業株式会社 | Temperature control device |
| KR100698414B1 (en) | 2005-05-27 | 2007-03-23 | 야마하 가부시키가이샤 | Magnetic sensor and temperature dependency characteristic compensation method for the same |
| JP2008111761A (en) | 2006-10-31 | 2008-05-15 | Sanyo Electric Co Ltd | Temperature detector |
| JP5780744B2 (en) | 2010-12-03 | 2015-09-16 | 日本電産サンキョー株式会社 | Rotary encoder |
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2013
- 2013-12-03 JP JP2013249798A patent/JP6344908B2/en active Active
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2014
- 2014-11-21 TW TW103140501A patent/TWI545302B/en not_active IP Right Cessation
- 2014-12-01 CN CN201410717734.1A patent/CN104699141B/en active Active
- 2014-12-01 KR KR1020140169589A patent/KR101661813B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4216371A (en) * | 1978-03-03 | 1980-08-05 | Compagnie D'electronique Et De Piezoelectricite C.E.P.E. | Device for heat regulation of an enclosure particularly for oscillating piezoelectric crystal, and enclosure comprising such a device |
| CN1695066A (en) * | 2002-11-29 | 2005-11-09 | 雅马哈株式会社 | Magnetic sensor and temperature dependency characteristic compensation method for the same |
| CN1548934A (en) * | 2003-05-07 | 2004-11-24 | 刘正洪 | Temperature sensor, its temperature detecting circuit and method |
| CN102257383A (en) * | 2008-12-22 | 2011-11-23 | 罗伯特·博世有限公司 | Sensor array comprising a temperature probe |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104699141A (en) | 2015-06-10 |
| KR101661813B1 (en) | 2016-09-30 |
| JP2015105934A (en) | 2015-06-08 |
| KR20150064684A (en) | 2015-06-11 |
| TWI545302B (en) | 2016-08-11 |
| TW201534868A (en) | 2015-09-16 |
| JP6344908B2 (en) | 2018-06-20 |
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