CN104699141A - Sensor device and method for controlling temperature by same - Google Patents
Sensor device and method for controlling temperature by same Download PDFInfo
- Publication number
- CN104699141A CN104699141A CN201410717734.1A CN201410717734A CN104699141A CN 104699141 A CN104699141 A CN 104699141A CN 201410717734 A CN201410717734 A CN 201410717734A CN 104699141 A CN104699141 A CN 104699141A
- Authority
- CN
- China
- Prior art keywords
- temperature
- voltage
- sensor device
- film
- bleeder circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1917—Control of temperature characterised by the use of electric means using digital means
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
Abstract
The invention provides a sensor device and a method for controlling temperature by the sensor device, and the device can properly control a heater based on results of temperature of a sensor element monitored by a resistor element used for temperature monitoring. In a magnetic sensor device, a switching element is controlled according to comparison results of temperature detection voltage of divided voltage in a bleeder circuit and control target voltage, so as to control power-on of a resistive film (heater) used for heating. Before the magnetic sensor device leaves factory, a process of applying constant voltage control target voltage setting on the bleeder circuit, and a microcomputer calculates temperature detection voltage when the resistive film used for temperature monitoring is in a preset temperature based on environment temperature when applying constant voltage on the bleeder circuit, temperature detection voltage when applying constant voltage on the bleeder circuit, resistance value of a divider resistor, and temperature coefficient of the resistance value of the resistive film used for temperature monitoring, and the calculation result of the temperature detection voltage is set as the control target voltage.
Description
Technical field
The present invention relates to and a kind ofly sensor element is provided with the sensor device of well heater and utilizes the method for described sensor device control temperature.
Background technology
In sensor device, sensor element is utilized to measure the physical quantity of detected object.Such as, in the magnet sensor arrangement with magnetoresistive element, detect the change of magnetic field with the rotation etc. of permanent magnet, and detect (such as, referenced patent documents 1) such as the positions of permanent magnet.
The testing result of sensor changes according to temperature mostly.Such as, for the magnetoresistive element of magnet sensor arrangement or change according to temperature for the resistance value of the sense magnetic film of Hall element.At this, when forming bridgt circuit by sense magnetic film, even if cause resistance change due to temperature variation, as long as such change is equal in each sense magnetic film, then also exporting change can not be produced.But, such as, in magnet sensor arrangement, even if when forming bridgt circuit by sense magnetic film, if temperature changes, then also can metrical error be produced.Although its reason is also not clear and definite, can infer that its reason is: the impact of the stress caused because thermal expansivity is different in device substrate with sense magnetic film is different according to the position of device substrate, or the film quality of sense magnetic film is different according to the position of device substrate.Therefore, well heater and monitoring temperature element are arranged at sensor element by present inventor's research, and based on the monitored results control heater of monitoring temperature element, thus make the temperature remained constant of sensor element.
On the other hand, as the method for serviceability temperature monitoring by element testing temperature, propose following technical scheme: being connected with fixed resistance by thermistor equitemperature monitoring element forms bleeder circuit, by the value (temperature detection voltage) of monitoring temperature element and fixed resistance dividing potential drop and reference voltage (referenced patent document 2) when relatively applying constant voltage to the two ends of bleeder circuit.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2012-118000 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2008-111761 publication
Summary of the invention
Invent technical matters to be solved
But, in the technology described in patent documentation 2, there is following problem: when being utilized dividing potential drop by thermistor equitemperature monitoring element and fixed resistance, the testing result of temperature produces deviation due to the deviation of the resistance value of monitoring temperature element.Particularly when resistive element is used as monitoring temperature element, there is following problem: owing to using the resistive element that the temperature coefficient of resistance value is large, therefore resistance value easily produces deviation.Therefore, even if based on the output control well heater detected via monitoring temperature resistive element, sensor element can not be set as the temperature specified.
In view of above problem, problem of the present invention is to provide a kind of sensor device that suitably can control well heater based on the result of the temperature by monitoring temperature resistive element monitoring sensor element and the method utilizing sensor device control temperature.
The technical scheme that technical solution problem adopts
In order to solve above-mentioned problem, the feature of sensor device involved in the present invention is, comprising: device substrate, and it is provided with sensor element; Monitoring temperature resistive element, it monitors the temperature of described sensor element; Well heater, it heats described sensor element; Bleeder circuit, the divider resistance of described bleeder circuit is electrically connected in series with described monitoring temperature resistive element, and the two ends of described bleeder circuit are applied in constant voltage; Comparer, it is compared in described bleeder circuit by the temperature detection voltage of described monitoring temperature resistive element and described divider resistance dividing potential drop and control objectives voltage; Energising control part, the comparative result that it obtains based on comparing in described comparer controls the energising to described well heater; And microcomputer, its using actual for described monitoring temperature resistive element become preset temperature time described temperature detection voltage export described comparer to as described control objectives voltage.
In sensor device involved in the present invention, if the temperature of sensor element changes, then the resistance value of monitoring temperature resistive element changes, and is also changed in bleeder circuit by the temperature detection voltage of monitoring temperature resistive element and divider resistance dividing potential drop.Therefore, as long as the comparative result detecting voltage and control objectives voltage by energising control part based on C.T. in a comparator and obtain controls the energising to well heater, just the temperature of sensor element can be maintained in the temperature of regulation.At this, by microcomputer, control objectives voltage is exported to comparer, microcomputer using actual for monitoring temperature resistive element become preset temperature time temperature detection voltage export comparer to as control objectives voltage.Therefore, even if the resistance value of monitoring temperature resistive element has deviation, microcomputer also exports temperature detection voltage corresponding for resistance value when becoming preset temperature with monitoring temperature resistive element is actual to comparer as control objectives voltage, even if therefore the resistance value of monitoring temperature resistive element has deviation, the temperature of sensor element also suitably can be controlled.
The present invention is effective when to be applied to described monitoring temperature resistive element be the situation of monitoring temperature resistive film.When monitoring temperature uses resistive film with resistive element, the resistance value of monitoring temperature resistive element easily produces deviation.But, in the present invention, even if the resistance value of monitoring temperature resistive element has deviation, microcomputer also exports temperature detection voltage corresponding for resistance value when becoming preset temperature with monitoring temperature resistive element is actual to comparer as control objectives voltage.Therefore, even if the resistance value of monitoring temperature resistive element has deviation, the temperature of sensor element also suitably can be controlled.
In the present invention, preferred described monitoring temperature resistive film is formed at described device substrate.By such structure, can the temperature of suitably monitoring sensor element.
In the present invention, preferred described microcomputer based on environment temperature when described bleeder circuit being applied to described constant voltage, described bleeder circuit applied to described constant voltage time the temperature coefficient of described temperature detection voltage, the resistance value of described divider resistance and the resistance value of described monitoring temperature resistive film calculate described temperature detection voltage when described monitoring temperature resistive film becomes preset temperature, and export the result of calculation of described temperature detection voltage to described comparer as described control objectives voltage.In monitoring temperature resistive element, even if resistance value has deviation, the deviation of the temperature coefficient of resistance value is also minimum.Therefore, as long as constant voltage can be applied to bleeder circuit at a certain temperature obtain temperature detection voltage, just can based on the temperature coefficient of the resistance value of the resistance value of environment temperature at that time, divider resistance and monitoring temperature resistive film, temperature detection voltage when accounting temperature monitoring resistive film becomes the temperature preset accurately.Therefore, as long as export such result of calculation to comparer as control objectives voltage, even if the resistance value of monitoring temperature resistive element has deviation, the temperature of sensor element also suitably can be controlled.
In the present invention, preferred described microcomputer has the Temperature measuring section measuring described environment temperature.By such structure, even if do not use outside thermometer, also control objectives voltage can be calculated.
In the present invention, preferably there is the storer storing described control objectives voltage.
In the present invention, the structure storing the described control objectives voltage determined before described sensor device dispatches from the factory in which memory can be adopted.
In the present invention, the structure storing the described control objectives voltage determined at preassigned time point after described sensor device dispatches from the factory in which memory can also be adopted.
In the present invention, preferred described well heater is the heating electric resistance film being formed at described device substrate.By such structure, can heating sensor element efficiently.
In the present invention, the structure described device substrate and described microcomputer being installed on same circuit board can be adopted.By such structure, can prevent the temperature of environment temperature and sensor element when calculating control objectives voltage from producing large difference.
In the present invention, described sensor element is the magnetoresistive element such as with the magnetoresistive film being formed at described device substrate.
In this case, magnet sensor arrangement can adopt the structure of the magnet with rotation opposed with described magnetoresistive element.
The involved in the present invention feature of the method for sensor device control temperature that utilizes is, arrange as lower component at described sensor device: device substrate, it is provided with sensor element, monitoring temperature resistive element, it monitors the temperature of described sensor element, well heater, it heats described sensor element, bleeder circuit, the divider resistance of described bleeder circuit is electrically connected in series with described monitoring temperature resistive element, and the two ends of described bleeder circuit are applied in constant voltage, comparer, it is compared in described bleeder circuit by the temperature detection voltage of described monitoring temperature resistive element and described divider resistance dividing potential drop and control objectives voltage, energising control part, the comparative result that it obtains based on comparing in described comparer controls the energising to described well heater, and microcomputer, its using actual for described monitoring temperature resistive element become preset temperature time described temperature detection voltage export described comparer to as described control objectives voltage, the described control objectives voltage sets operation utilizing the method for sensor device control temperature to carry out applying described bleeder circuit described constant voltage, in described control objectives voltage sets operation, described microcomputer is based on environment temperature when described bleeder circuit being applied to described constant voltage, described temperature detection voltage when described constant voltage applies to described bleeder circuit, the temperature coefficient of the resistance value of described divider resistance and the resistance value of described monitoring temperature resistive element calculates described temperature detection voltage when described monitoring temperature resistive element becomes preset temperature, and the result of calculation of described temperature detection voltage is defined as described control objectives voltage.
Utilize in the method for sensor device control temperature in involved in the present invention, the structure of carrying out described control objectives voltage sets operation before described sensor device dispatches from the factory can be adopted.
Utilize in the method for sensor device control temperature in involved in the present invention, also can adopt the structure of carrying out described control objectives voltage sets operation after described sensor device dispatches from the factory at preassigned time point.
Invention effect
Utilize in sensor device in involved in the present invention, if the temperature of sensor element changes, then the resistance value of monitoring temperature resistive element changes, and is changed in bleeder circuit by the temperature detection voltage of monitoring temperature resistive element and divider resistance dividing potential drop.Therefore, as long as the comparative result detecting voltage and control objectives voltage by energising control part based on C.T. in a comparator and obtain controls the energising to well heater, just the temperature of sensor element can be maintained in the temperature of regulation.At this, by microcomputer, control objectives voltage is exported to comparer, microcomputer using actual for monitoring temperature resistive element become preset temperature time temperature detection voltage export comparer to as control objectives voltage.Therefore, even if the resistance value of monitoring temperature resistive element has deviation, microcomputer also exports temperature detection voltage corresponding for resistance value when becoming preset temperature with monitoring temperature resistive element is actual to comparer as control objectives voltage, even if therefore the resistance value of monitoring temperature resistive element has deviation, the temperature of sensor element also suitably can be controlled.
Accompanying drawing explanation
Fig. 1 is the key diagram applying magnet sensor arrangement of the present invention.
Fig. 2 is the key diagram applying the device substrate that magnet sensor arrangement of the present invention uses.
Fig. 3 is the key diagram that the Cleaning Principle applied in magnet sensor arrangement of the present invention etc. is shown.
Fig. 4 is the key diagram that the electric structure applying magnet sensor arrangement of the present invention is shown.
Embodiment
Below, with reference to accompanying drawing, be described applying sensor device of the present invention centered by the magnet sensor arrangement forming magnetic-type rotary encoder.
(structure of magnet sensor arrangement)
Fig. 1 is the key diagram applying magnet sensor arrangement of the present invention, and Fig. 1 (a) and Fig. 1 (b) are stereographic map from the unilateral observation magnet sensor arrangement of axis direction and its exploded view respectively.
Magnet sensor arrangement 10 (rotary encoder) shown in Fig. 1 has: the retainer 6 being fixed on motor shell etc.; The circuit board 50 of retainer 6 is fixed on by screw 61,62 etc.; And being fixed on the magnet 20 of output shaft etc. of motor, magnet 20 rotates around the axis L by magnetic blow out centre.Magnet 20 is opposed with circuit board 50 in the inner side of retainer 6.In the manner, magnet 20 has the magnetizing surface being circumferentially formed with a N pole and a S pole.
In the first surface 50a side opposed with magnet 20 of circuit board 50, in the position opposed with magnet 20, device substrate 40 is installed, in the position adjacent with device substrate 40, Hall element 81,82 is installed.Be formed with sense magnetic film described later at device substrate 40, the center of the sense magnetic film of rounded configuration is arranged on the rotation of magnet.Further, the second surface 50b of the opposition side of the side opposed with magnet 20 of circuit board 50 is provided with microcomputer 9, the amplifier portion 30 be made up of amplifier IC, on-off element 83, comparer 85, storer 99 and connector 59 etc.Circuit board 50 is the printed wiring boards being formed with distribution at phenolic substrate and glass epoxy substrate etc.
(structure of device substrate 40)
Fig. 2 is the key diagram applying the device substrate 40 that magnet sensor arrangement 10 of the present invention uses, Fig. 2 (a), Fig. 2 (b) and Fig. 2 (c) be respectively the planar structure that device substrate 40 is shown key diagram, the key diagram of the cross section structure of device substrate 40 is shown and the key diagram of variation of cross section structure of device substrate 40 is shown.In addition, in Fig. 2 (b) and Fig. 2 (c), schematically illustrate the Rotating fields of magnetoresistive element 4 (sense magnetic film 41-44), monitoring temperature resistive film 47 and heating electric resistance film 48.Further, in Fig. 2 (a), to monitoring temperature resistive film 47 backslash mark, to the positive slash mark of heating electric resistance film 48.
As shown in Fig. 2 (a), the one side 40a of device substrate 40 is configured with the magnetoresistive element 4 (sensor element) with sense magnetic film 41-44 (magnetoresistive film), and sense magnetic film 41-44 is by mutually to turn back and the part extended constitutes the sense magnetic area 45 of circle in the central authorities of device substrate 40.In the manner, device substrate 40 is for having the silicon substrate of the flat shape of quadrilateral.
Distribution part extends integratedly from sense magnetic film 41-44, is provided with ground wire terminal GNDA, the output+A lead-out terminal+A mutually of power supply terminal VccA, A phase of A phase, output-A lead-out terminal-A mutually, ground wire terminal GNDB, the output+B lead-out terminal+B mutually of power supply terminal VccB, B phase of B phase and output-B lead-out terminal-B mutually in the end of distribution part.
Further, the one side 40a of device substrate 40 is formed with monitoring temperature resistive film 47 (temperature-sensitive portion) and heating electric resistance film 48 (well heater).At this, heating electric resistance film 48 is formed closed loop state along the limit of device substrate 40 to be four frame shapes extensions surrounds the whole region forming thoughts magnetic film 41-44.Therefore, heating electric resistance film 48 is formed in the region of in the face of device substrate 40, staggering in direction with sense magnetic film 41-44, therefore not overlapping when overlooking.Further, distribution part 481 side from two opposite edge of heating electric resistance film 48 are divided extend, and is formed with the power supply terminal VccH for powering to heating electric resistance film 48 in the end of distribution part 481.In contrast, the end of distribution part 482 that extends of the opposing party from these two edge are divided and A phase with ground wire terminal GNDA be connected.Therefore, the ground wire terminal GNDA of A phase is also used as the ground wire terminal GNDH relative to heating electric resistance film 48.At this, distribution part 481 and heating electric hinders link position that the link position of film 48 and distribution part 482 and heating electric hinder film 48 to be positioned at relative to feeling magnetic area 45 are point-symmetric position.Therefore, the link position hindering film 48 from distribution part 481 and heating electric to distribution part 482 and heating electric hinder the link position of film 48 right around time the heating electric length that hinder film 48 with the link position hindering film 48 from distribution part 481 and heating electric to the link position left side that distribution part 482 and heating electric hinder film 48 around time heating electric to hinder the length of film 48 equal.
Monitoring temperature resistive film 47 is arranged near an angle in four angles of the heating electric resistance film 48 in the inside region of heating electric resistance film 48, and hinders between film 48 in sense magnetic area 45 and heating electric.Monitoring temperature resistive film 47 is in repeatedly turning back and the flat shape extended.Therefore, even if occupied area is narrow, longer monitoring temperature resistive film 47 also can be formed.At this, although monitoring temperature resistive film 47 divides local overlapping with the wiring part of sense magnetic film 44, but because monitoring temperature resistive film 47 is formed in and the region felt magnetic area 45 and in the face of device substrate 40, stagger in direction, therefore monitoring temperature resistive film 47 is not overlapping with sense magnetic area 45.The power supply terminal VccS of monitoring temperature is formed in an end of monitoring temperature resistive film 47.Further, monitoring temperature with another end of resistive film 47 and B phase with ground wire terminal GNDB be connected.Therefore, the ground wire terminal GNDB of B phase is also used as the ground wire terminal GNDS relative to monitoring temperature resistive film 47.
Device substrate 40 has the cross section structure shown in Fig. 2 (b), or has the cross section structure shown in Fig. 2 (c).Specifically, as shown in Fig. 2 (b), first, the 3rd dielectric film 403 one side 40a of device substrate 40 being formed with the first dielectric film 401 be made up of silicon oxide layer, the second dielectric film 402 be made up of silicon oxide layer and being made up of polyimide resin etc.In the manner, sense magnetic film 41-44 is the permalloy film formed by sputtering method etc., and monitoring temperature resistive film 47 and heating electric resistance film 48 are the conducting film that the titanium film etc. formed by sputtering method etc. does not show magnetic resistance effect.
At this, at sense magnetic film 41-44, monitoring temperature with in resistive film 47 and heating electric resistance film 48, sense magnetic film 41-44 is formed in the side (lower layer side) leaning on device substrate 40 most.More particularly, the interlayer that magnetic film 41-44 is formed in device substrate 40 and the first dielectric film 401 is felt.Monitoring temperature resistive film 47 is formed in the interlayer of the first dielectric film 401 and the second dielectric film 402.Heating electric resistance film 48 is formed in the interlayer of device substrate 40 and the first dielectric film 401 in the same manner as sense magnetic film 41-44.Therefore, sense magnetic film 41-44 and heating electric hinder film 48 and are formed in same layer, and feel magnetic film 41-44 and be formed in different layers from monitoring temperature resistive film 47 across the first dielectric film 401.
In the mode shown in Fig. 2 (c), sense magnetic film 41-44 is also formed in the interlayer of device substrate 40 and the first dielectric film 401.Monitoring temperature resistive film 47 is formed in the interlayer of the first dielectric film 401 and the second dielectric film 402.Heating electric resistance film 48 is formed in the interlayer of the first dielectric film 401 and the second dielectric film 402 in the same manner as monitoring temperature resistive film 47.Therefore, sense magnetic film 41-44 hinders film 48 from monitoring temperature resistive film 47 and heating electric and is formed in different layers across the first dielectric film 401, and monitoring temperature resistive film 47 and heating electric hinder film 48 and be formed in same layer.
(detailed construction of magnet sensor arrangement 10)
Fig. 3 is the key diagram that the detection Cleaning Principle applied in magnet sensor arrangement 10 of the present invention etc. is shown, Fig. 3 (a), Fig. 3 (b), Fig. 3 (c) and Fig. 3 (d) are the key diagram of the electric connection structure of the sense magnetic film that A phase is shown respectively, the key diagram of relation between the key diagram that the electric connection structure of the sense magnetic film of B phase is shown, the key diagram of signal exported from magnetoresistive element 4 and the angle position (electric angle) that such signal and magnet 20 is shown.
In the magnetoresistive element 4 illustrated with reference to figure 2, sense magnetic film 41-44 is configured to the sense magnetic film (A phase (SIN) feels magnetic film 41,43 and B phase (COS) feels magnetic film 42,44) of two phases, the sense magnetic film of described two phases has 90 ° of phase differential mutually relative to the phase place of the magnet 20 shown in Fig. 1 (b), and device substrate 40 is configured on the axis L (rotation center axis) at the center by magnet 20 as shown in Figure 1.Then, magnetoresistive element 4 with the magnetic field intensity of the resistance value of each sense magnetic film 41-44 more than saturated sensitive area detect in the face of magnetizing surface, direction occurs towards the rotating magnetic field of change.
A phase is felt magnetic film and is had and feel magnetic film 43 and-A phase (SIN-) with+A phase (SIN+) of the movement of the phase difference detection magnet 20 of 180 ° and feel magnetic film 41, B phase and feel magnetic film and have and feel magnetic film 44 with the+B phase (COS+) of the movement of the phase difference detection magnet 20 of 180 ° and-B phase (COS-) feels magnetic film 42.
+ A feels magnetic film 43 and-A mutually and feels magnetic film 41 mutually and constitute the bridgt circuit shown in Fig. 3 (a), and one end of this bridgt circuit is connected with power supply terminal VccA, and the other end is connected with ground wire terminal GNDA.The point midway feeling magnetic film 43 at+A is mutually provided with the lead-out terminal+A exporting+A phase, and the point midway feeling magnetic film 41 at-A is mutually provided with the lead-out terminal-A exporting-A phase.And, + B feels magnetic film 44 and-B mutually and feels magnetic film 42 mutually and also feel magnetic film 43 and-A with+A mutually to feel magnetic film 41 mutually identical, constitute the bridgt circuit shown in Fig. 3 (b), one end of this bridgt circuit is connected with power supply terminal VccB, and the other end is connected with ground wire terminal GNDB.The point midway feeling magnetic film 44 at+B is mutually provided with the lead-out terminal+B exporting+B phase, and the point midway feeling magnetic film 42 at-B is mutually provided with the lead-out terminal-B exporting-B phase.In addition, in figure 3, for convenience's sake, although describe the power supply terminal VccA of A phase and the power supply terminal VccB of B phase respectively, power supply terminal VccA and the B power supply terminal VccB mutually of A phase also can share.Further, in figure 3, for convenience's sake, although describe the ground wire terminal GNDA of A phase and the ground wire terminal GNDB of B phase respectively, ground wire terminal GNDA and the B ground wire terminal GNDB mutually of A phase also can share.
(the electric structure of magnet sensor arrangement 10)
Fig. 4 is the key diagram that the electric structure applying magnet sensor arrangement 10 of the present invention is shown, Fig. 4 (a) and Fig. 4 (b) is the key diagram of the electric structure that magnet sensor arrangement 10 entirety is shown respectively and the key diagram of the electric structure that temperature controls is shown.
As shown in Fig. 4 (a), magnet sensor arrangement 10 has: amplifier portion 30 (the amplifier portion 31,32 of amplifier portion 30 (+A), amplifier portion 30 (-A), amplifier portion 30 (+B), amplifier portion 30 (-B), Hall element), and it amplifies the output from device substrate 40; And microcomputer 9, it has A/D converter section 91 etc., and microcomputer 9 has the signal processing part 92 of rotary angle position and rotating speed etc. based on the input magnet 20 changed through A/D.In magnet sensor arrangement 10, the magnet 20 shown in Fig. 1 revolve turn around time, export sine wave signal sin, cos shown in Fig. 3 (c) of two periodic quantities from magnetoresistive element 4.Therefore, if after amplifying sine wave signal sin, cos by amplifier portion 30 (amplifier portion 30 (+A), 30 (-A), 30 (+B), 30 (-B)), convert digital signal to, and export such digital signal to microcomputer 9, then in microcomputer 9, signal processing part 92 tries to achieve the Lissajous figure shown in Fig. 3 (d).Therefore, as long as obtain θ=tan from sine wave signal sin, cos
-1(sin/cos), with regard to the angular position of known magnet 20.Further, in the manner, Hall element 81,82 is configured with in the position of departing from 90 ° from the rotation center axis (axis L) of magnet 20.Therefore, by the combination of the output of Hall element 81,82, known current location is positioned at which interval of sine wave signal sin, cos.Therefore, magnet sensor arrangement 10 can generate the absolute angular position information of magnet 20 based on the testing result of the testing result of magnetoresistive element 4 and Hall element 81,82, thus can carry out absolute action.
(temperature of magnetoresistive element 4 regulates)
As shown in Fig. 4 (a) and Fig. 4 (b), the resistance variations be configured with in the magnet sensor arrangement 10 of the manner based on monitoring temperature resistive film 47 controls the energising control part of power supply to heating electric resistance film 48.More particularly, in device substrate 40, be connected with the divider resistance 84 be made up of fixed resistance at the power supply terminal VccS of the monitoring temperature of monitoring temperature resistive film 47, the side contrary with the side being connected with monitoring temperature resistive film 47 in divider resistance 84 is connected with the power supply terminal VccS0 of the constant voltage being applied with monitoring temperature.The side contrary with the side being connected with divider resistance 84 in monitoring temperature resistive film 47 is connected with ground wire terminal GND, and monitoring temperature resistive film 47 and divider resistance 84 constitute the bleeder circuit 80 of connecting between power supply terminal VccS0 with ground wire terminal GND.
Be connected with the on-off element 83 of the energising control be made up of bipolar transistor at the power supply terminal VccH of the heating of heating electric resistance film 48, constitute energising control part by on-off element 83.In on-off element 83 be connected with heating electric and hinder the power supply terminal VccH0 that contrary side, the side of film 48 is connected with the constant voltage being applied with heater-driven.The side contrary with the side being connected with on-off element 83 in heating electric resistance film 48 is connected with ground wire terminal GND, and heating electric resistance film 48 is connected between power supply terminal VccH0 with ground wire terminal GND with on-off element 83.
At this, the monitoring temperature terminal of resistive film 47 with the same comparer 85 be made up of operational amplifier in the coupling part of divider resistance 84 is connected, and have input the control objectives voltage V0 becoming threshold value for being switched on or switched off on-off element 83 to another terminal of comparer 85.Therefore, if the temperature of device substrate 40 (magnetoresistive element 4) reduces, then the monitoring temperature resistance value of resistive film 47 reduces, thus can be reduced by the temperature detection voltage of monitoring temperature resistive film 47 with the tie point of divider resistance 84.Now, if temperature detection voltage is lower than the control objectives voltage V0 of another terminal inputing to comparer 85, then comparer 85 output LOW voltage turn on-switch element 83, thus power to heating electric resistance film 48.Therefore, magnetoresistive element 4 (sense magnetic film 41-44) is heated.
In this state, if the temperature of device substrate 40 rises, then the monitoring temperature resistance value of resistive film 47 rises, and monitoring temperature resistive film 47 can rise with the temperature detection voltage of the tie point of divider resistance 84.Now, if temperature detection voltage is higher than the control objectives voltage V0 of another terminal inputing to comparer 85, then comparer 85 output HIGH voltage cut-off switch element 83, thus stop powering to heating electric resistance film 48.Therefore, the temperature of magnetoresistive element 4 (sense magnetic film 41-44) can be maintained in the set point of temperature specified according to control objectives voltage V0 etc.
(setting of control objectives voltage V0)
When carrying out above-mentioned temperature and controlling, control objectives voltage V0 exports comparer 85 to from microcomputer 9.Namely, control objectives voltage sets portion 94 is built-in with in microcomputer 9, and the storer 99 storing control objectives voltage V0 is had in the outer setting of microcomputer 9, after the control objectives voltage V0 read from storer 99 is converted to simulating signal from digital signal by D/A converter section 93 by the control objectives voltage sets portion 94 of microcomputer 9, export comparer 85 to.At this, in the control objectives voltage sets operation implemented before magnet sensor arrangement 10 dispatches from the factory, by each magnet sensor arrangement 10 setup control target voltage V0.
More particularly, because resistive element such as monitoring temperature resistive film 47 grade uses the resistive element that the temperature coefficient of resistance value is larger, therefore different from divider resistance 84, the resistance value of each magnet sensor arrangement 10 (each device substrate 40) easily produces deviation.Particularly in the manner, due to monitoring temperature resistive film 47 is used as monitoring temperature resistive element, therefore, compared with such with divider resistance 84 block resistive element, the resistance value of each magnet sensor arrangement 10 (each device substrate 40) easily produces deviation.Therefore, in the manner, before magnet sensor arrangement 10 dispatches from the factory, temperature detection voltage when becoming preset temperature to each magnet sensor arrangement 10 accounting temperature monitoring resistive film 47 is actual in control objectives voltage sets operation, such result of calculation is defined as control objectives voltage V0, and is stored in storer 99.
And, in the manner, when determining control objectives voltage V0, operational part 96 and Temperature measuring section 97 is made to be built in microcomputer 9, in control objectives voltage sets operation, based on the measurement result of Temperature measuring section 97 and the operation result determination control objectives voltage V0 of operational part 96, and be stored in storer 99.
Target temperature is being set to 70 DEG C, the constant voltage of the monitoring temperature applied the two ends of bleeder circuit 80 is set to Vc, the temperature coefficient of monitoring temperature resistive film 47 is set to α (Ω/DEG C), when the resistance of divider resistance 84 is set to Rc, the content of such control objectives voltage sets operation is described.First, before magnet sensor arrangement 10 dispatches from the factory, the two ends of bleeder circuit 80 are applied to the constant voltage Vc of monitoring temperature, the detection monitoring temperature now temperature detection voltage Va of resistive film 47 with the tie point of divider resistance 84
ta, and, detect environment temperature ta now by Temperature measuring section 97.
Consequently, operational part 96 obtains the resistance value Rs of the monitoring temperature resistive film 47 when temperature is ta by following formula
ta.
Va
ta＝Rs
ta×(Vc/(Rs
ta+Rc))
Rs
ta＝Va
ta×((Rs
ta+Rc)/Vc)
Rs
ta＝(Va
ta×Rc)/(Vc-Va
ta)
At this, even if magnet sensor arrangement 10 or device substrate 40 difference, the temperature coefficient α of monitoring temperature resistive film 47 is also constant, the resistance value R of the monitoring temperature resistive film 47 when therefore temperature is 70 DEG C
70for Rs
ta× (1+ (α × (70-ta)).Therefore, temperature detection voltage Va when operational part 96 can be 70 DEG C according to following formula accounting temperature
70, temperature detection voltage Va when thus temperature is 70 DEG C by control objectives voltage sets portion 94
70result of calculation be stored in storer 99 as control objectives voltage V0.
Va
70＝Vc×R
70/(R
70+Rc)
But, R
70=Rs
ta× (1+ (α × (70-ta))
Therefore, after magnet sensor arrangement 10 dispatches from the factory, can based on the control objectives voltage V0 control temperature corresponding with the resistance value of the monitoring temperature resistive film 47 that reality is formed in magnet sensor arrangement 10.
(main efficacy results of the manner)
As described above, in the magnet sensor arrangement 10 of the manner, if the temperature of magnetoresistive element 4 changes, then the resistance value of monitoring temperature resistive film 47 changes, and is also changed in bleeder circuit 80 by the temperature detection voltage of monitoring temperature resistive film 47 and divider resistance 84 dividing potential drop.Therefore, as long as the comparative result that the on-off element 83 (energising control part) controlled by energising is obtained based on the detection voltage of C.T. in comparer 85 and control objectives voltage V0 controls to hinder to heating electric the energising of film 48 (well heater), just the temperature of magnetoresistive element 4 can be maintained in the temperature of regulation.Therefore, the testing result of magnetoresistive element 4 is not subject to the impact of environment temperature.
Further, in the manner, before magnet sensor arrangement 10 dispatches from the factory, control objectives voltage sets operation bleeder circuit 80 being applied to constant voltage Va is carried out.In such control objectives voltage sets operation, microcomputer 9 based on the environment temperature Ta (temperature of microcomputer 9) when bleeder circuit 80 being applied to constant voltage Va, bleeder circuit 80 applied to constant voltage Va time temperature detection voltage and the temperature coefficient α accounting temperature monitoring resistive film 47 of the resistance value of divider resistance 84 and the resistance value of monitoring temperature resistive film 47 become preset temperature (such as, 70 DEG C) time temperature detection voltage, and the result of calculation of this temperature detection voltage is defined as control objectives voltage V0, and be stored in storer 99.Then, after magnet sensor arrangement 10 dispatches from the factory, comparer 85 with the suitable control objectives voltage V0 set in each magnet sensor arrangement 10 as benchmark gauge tap element 83 (energising control part).Therefore, even if the resistance value of the monitoring temperature resistive film 47 in each magnet sensor arrangement 10 has deviation, the temperature of magnetoresistive element 4 can also suitably be controlled.Particularly in the manner, due to monitoring temperature resistive film 47 is used as monitoring temperature resistive element, although therefore resistance value easily produces deviation, as long as by the manner, the temperature of magnetoresistive element 4 just suitably can be controlled.
Further, in the manner, because monitoring temperature resistive film 47 and magnetoresistive element 4 are formed at same device substrate 40, therefore, it is possible to suitably monitor the temperature of magnetoresistive element 4.Further, due to the heating electric resistance film 48 being formed at device substrate 40 is used as well heater, therefore, it is possible to heat magnetoresistive element 4 efficiently.
And, because microcomputer 9 has the Temperature measuring section 97 of measures ambient temperature, even if therefore do not use outside thermometer, control objectives voltage V0 also can be calculated.
Further, because device substrate 40 and microcomputer 9 are arranged on same circuit board 50, therefore, it is possible to prevent when setup control target voltage V0, the temperature of environment temperature and magnetoresistive element 4 produces large difference.
Further, because magnet sensor arrangement 10 has the magnet 20 of rotation opposed with magnetoresistive element 4, thus can be rotated along with magnet 20 by air and flow, the heat making heating electric hinder film 48 spreads all over magnetoresistive element 4 equably.Therefore, it is possible to controlled the temperature of magnetoresistive element 4 accurately by heating electric resistance film 48.
(another embodiment)
In the above-described embodiment, although before magnet sensor arrangement 10 dispatches from the factory, carry out control objectives voltage sets operation to set control objectives voltage V0, but also after magnet sensor arrangement 10 dispatches from the factory, control objectives voltage sets operation can be carried out at preassigned time point and carrys out setup control target voltage V0.Such as, also can, after the action of magnet sensor arrangement 10 stops, again the time point of magnet sensor arrangement 10 action be made to carry out control objectives voltage sets operation, thus setup control target voltage V0.
(another other embodiments)
In the above-described embodiment, although as sensor device exemplified with magnet sensor arrangement 10, also other sensor devices such as light sensor arrangement can be applied the present invention to.
In the above-described embodiment, although employ the resistive film (monitoring temperature resistive film 47 and heating electric resistance film 48) being formed at device substrate 40 as monitoring temperature resistive element and well heater, the structure being equiped with monitoring temperature resistive element and well heater on circuit board 50 also can be adopted.
Label declaration
4 magnetoresistive elements (sensor element);
6 retainers;
9 microcomputers;
10 magnet sensor arrangements (sensor device);
40 device substrates;
41-44 feels magnetic film;
47 monitoring temperatures are with resistive film (monitoring temperature resistive element);
48 heating electrics resistance film (well heater);
50 circuit boards;
84 divider resistances;
80 bleeder circuits;
83 on-off elements (energising control part);
85 comparers;
92 signal processing parts;
94 control objectives voltage sets portions;
96 operational parts;
97 Temperature measuring section;
99 storeies.
Claims (19)
1. a sensor device, is characterized in that, comprising:
Device substrate, it is provided with sensor element;
Monitoring temperature resistive element, it monitors the temperature of described sensor element;
Well heater, it heats described sensor element;
Bleeder circuit, the divider resistance of described bleeder circuit is electrically connected in series with described monitoring temperature resistive element, and the two ends of described bleeder circuit are applied in constant voltage;
Comparer, it is compared in described bleeder circuit by the temperature detection voltage of described monitoring temperature resistive element and described divider resistance dividing potential drop and control objectives voltage;
Energising control part, the comparative result that it obtains based on comparing in described comparer controls the energising to described well heater; And
Microcomputer, its using actual for described monitoring temperature resistive element become preset temperature time described temperature detection voltage export described comparer to as described control objectives voltage.
2. sensor device according to claim 1, is characterized in that,
Described monitoring temperature resistive element is monitoring temperature resistive film.
3. sensor device according to claim 2, is characterized in that,
Described monitoring temperature resistive film is formed at described device substrate.
4. sensor device according to claim 3, is characterized in that,
Described microcomputer based on environment temperature when described bleeder circuit being applied to described constant voltage, described bleeder circuit applied to described constant voltage time the temperature coefficient of described temperature detection voltage, the resistance value of described divider resistance and the resistance value of described monitoring temperature resistive film calculate described temperature detection voltage when described monitoring temperature resistive film becomes preset temperature, and export the result of calculation of described temperature detection voltage to described comparer as described control objectives voltage.
5. sensor device according to claim 4, is characterized in that,
Described microcomputer has the Temperature measuring section measuring described environment temperature.
6. sensor device according to claim 5, is characterized in that,
Described sensor device has the storer storing described control objectives voltage.
7. sensor device according to claim 6, is characterized in that,
Store the described control objectives voltage determined before described sensor device dispatches from the factory in which memory.
8. sensor device according to claim 7, is characterized in that,
Described well heater is the heating electric resistance film being formed at described device substrate.
9. sensor device according to claim 8, is characterized in that,
Described device substrate and described microcomputer are installed on same circuit board.
10. sensor device according to claim 6, is characterized in that,
Store in which memory after described sensor device dispatches from the factory at the described control objectives voltage that preassigned time point is determined.
11. sensor devices according to claim 10, is characterized in that,
Described well heater is the heating electric resistance film being formed at described device substrate.
12. sensor devices according to claim 11, is characterized in that,
Described device substrate and described microcomputer are installed on same circuit board.
13., according to the sensor device in claim 1 to 12 described in any one, is characterized in that,
Described sensor element is the magnetoresistive element with the magnetoresistive film being formed at described device substrate.
14. sensor devices according to claim 13, is characterized in that,
Described sensor device has the magnet of rotation opposed with described magnetoresistive element.
15. sensor devices according to claim 4, is characterized in that,
Described sensor device has the storer storing described control objectives voltage.
16. sensor devices according to claim 15, is characterized in that,
Store the described control objectives voltage determined before described sensor device dispatches from the factory in which memory.
17. 1 kinds of methods utilizing sensor device control temperature, is characterized in that,
Arrange as lower component at described sensor device:
Device substrate, it is provided with sensor element;
Monitoring temperature resistive element, it monitors the temperature of described sensor element;
Well heater, it heats described sensor element;
Bleeder circuit, the divider resistance of described bleeder circuit is electrically connected in series with described monitoring temperature resistive element, and the two ends of described bleeder circuit are applied in constant voltage;
Comparer, it is compared in described bleeder circuit by the temperature detection voltage of described monitoring temperature resistive element and described divider resistance dividing potential drop and control objectives voltage;
Energising control part, the comparative result that it obtains based on comparing in described comparer controls the energising to described well heater; And
Microcomputer, its using described monitoring temperature resistive element is actual become preset temperature time described temperature detection voltage export described comparer to as described control objectives voltage,
The described control objectives voltage sets operation utilizing the method for sensor device control temperature to carry out applying described bleeder circuit described constant voltage,
In described control objectives voltage sets operation, described microcomputer based on environment temperature when described bleeder circuit being applied to described constant voltage, described bleeder circuit applied to described constant voltage time the temperature coefficient of described temperature detection voltage, the resistance value of described divider resistance and the resistance value of described monitoring temperature resistive element calculate described temperature detection voltage when described monitoring temperature resistive element becomes preset temperature, and the result of calculation of described temperature detection voltage is defined as described control objectives voltage.
18. methods utilizing sensor device control temperature according to claim 17, is characterized in that,
Before described sensor device dispatches from the factory, carry out described control objectives voltage sets operation.
19. methods utilizing sensor device control temperature according to claim 17, is characterized in that,
After described sensor device dispatches from the factory, carry out described control objectives voltage sets operation at preassigned time point.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013249798A JP6344908B2 (en) | 2013-12-03 | 2013-12-03 | Sensor device and temperature control method in sensor device |
| JP2013-249798 | 2013-12-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104699141A true CN104699141A (en) | 2015-06-10 |
| CN104699141B CN104699141B (en) | 2017-05-17 |
Family
ID=53346367
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410717734.1A Active CN104699141B (en) | 2013-12-03 | 2014-12-01 | Sensor device and method for controlling temperature by same |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6344908B2 (en) |
| KR (1) | KR101661813B1 (en) |
| CN (1) | CN104699141B (en) |
| TW (1) | TWI545302B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106998201A (en) * | 2016-01-22 | 2017-08-01 | 清华大学 | Light identification switch device |
| CN111591043A (en) * | 2020-05-14 | 2020-08-28 | 上海世麦智能科技有限公司 | Stepping motor speed control method based on thermal printer and thermal printer |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106152251A (en) * | 2016-08-15 | 2016-11-23 | 珠海格力电器股份有限公司 | gear control method, circuit and electric heater |
| CN106196269B (en) * | 2016-08-16 | 2019-03-08 | 珠海格力电器股份有限公司 | The control circuit and control method of electric heater |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4216371A (en) * | 1978-03-03 | 1980-08-05 | Compagnie D'electronique Et De Piezoelectricite C.E.P.E. | Device for heat regulation of an enclosure particularly for oscillating piezoelectric crystal, and enclosure comprising such a device |
| JPH0677558A (en) * | 1992-08-28 | 1994-03-18 | Murata Mfg Co Ltd | Magnetic sensor |
| CN1548934A (en) * | 2003-05-07 | 2004-11-24 | 刘正洪 | Temperature sensor, its temperature detecting circuit and method |
| CN1695066A (en) * | 2002-11-29 | 2005-11-09 | 雅马哈株式会社 | Magnetic sensor and temperature dependency characteristic compensation method for the same |
| CN102257383A (en) * | 2008-12-22 | 2011-11-23 | 罗伯特·博世有限公司 | Sensor array comprising a temperature probe |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02298814A (en) * | 1989-05-13 | 1990-12-11 | Aisan Ind Co Ltd | Rotational angle sensor |
| JP3185424B2 (en) * | 1992-12-22 | 2001-07-09 | カシオ電子工業株式会社 | Temperature control device |
| KR100698414B1 (en) | 2005-05-27 | 2007-03-23 | 야마하 가부시키가이샤 | Magnetic sensor and temperature dependency characteristic compensation method for the same |
| JP2008111761A (en) | 2006-10-31 | 2008-05-15 | Sanyo Electric Co Ltd | Temperature detector |
| JP5780744B2 (en) | 2010-12-03 | 2015-09-16 | 日本電産サンキョー株式会社 | Rotary encoder |
-
2013
- 2013-12-03 JP JP2013249798A patent/JP6344908B2/en active Active
-
2014
- 2014-11-21 TW TW103140501A patent/TWI545302B/en not_active IP Right Cessation
- 2014-12-01 KR KR1020140169589A patent/KR101661813B1/en active IP Right Grant
- 2014-12-01 CN CN201410717734.1A patent/CN104699141B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4216371A (en) * | 1978-03-03 | 1980-08-05 | Compagnie D'electronique Et De Piezoelectricite C.E.P.E. | Device for heat regulation of an enclosure particularly for oscillating piezoelectric crystal, and enclosure comprising such a device |
| JPH0677558A (en) * | 1992-08-28 | 1994-03-18 | Murata Mfg Co Ltd | Magnetic sensor |
| CN1695066A (en) * | 2002-11-29 | 2005-11-09 | 雅马哈株式会社 | Magnetic sensor and temperature dependency characteristic compensation method for the same |
| CN1548934A (en) * | 2003-05-07 | 2004-11-24 | 刘正洪 | Temperature sensor, its temperature detecting circuit and method |
| CN102257383A (en) * | 2008-12-22 | 2011-11-23 | 罗伯特·博世有限公司 | Sensor array comprising a temperature probe |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106998201A (en) * | 2016-01-22 | 2017-08-01 | 清华大学 | Light identification switch device |
| CN106998201B (en) * | 2016-01-22 | 2020-06-09 | 清华大学 | Optical identification switch device |
| CN111591043A (en) * | 2020-05-14 | 2020-08-28 | 上海世麦智能科技有限公司 | Stepping motor speed control method based on thermal printer and thermal printer |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201534868A (en) | 2015-09-16 |
| TWI545302B (en) | 2016-08-11 |
| KR101661813B1 (en) | 2016-09-30 |
| JP2015105934A (en) | 2015-06-08 |
| JP6344908B2 (en) | 2018-06-20 |
| KR20150064684A (en) | 2015-06-11 |
| CN104699141B (en) | 2017-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20200092951A1 (en) | Two-wire layered heater system | |
| CN104699141A (en) | Sensor device and method for controlling temperature by same | |
| US5485747A (en) | Method of measurement of relative humidity, in particular in radiosondes, and humidity detectors that make use of the method | |
| US9664575B2 (en) | Self-calibrating resistive flexure sensor | |
| CA2887288A1 (en) | System method and apparatus for humidity sensor temperature compensation | |
| CN105074392A (en) | Magnetism-sensor device and rotary encoder | |
| JP3460749B2 (en) | Detector | |
| JPH0797113B2 (en) | Wind direction and wind speed measurement method and device | |
| US8118481B2 (en) | Fluid detector | |
| US10352747B2 (en) | Thermal air flow-rate sensor | |
| JP2004347590A (en) | Measuring element for flow sensors | |
| CN104567940B (en) | Sensor device | |
| JP6619974B2 (en) | Encoder | |
| CN107807253A (en) | Anemometry device and air-quantity measuring device | |
| CN108351261A (en) | Abnormal temperature detection circuit | |
| JP5521498B2 (en) | Wind speed sensor | |
| RU2169908C2 (en) | Device measuring level of liquid | |
| FI100739B (en) | Procedure for measuring the relative humidity, especially in radios and humidity sensors for applying the method | |
| JPH0478616A (en) | Wind speed detection device of air conditioner for car | |
| JPH1123335A (en) | Detecting apparatus for flow rate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |