CN104698697B - Pixel structure and display panel - Google Patents
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133345—Insulating layers
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
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Abstract
本发明公开了一种像素结构,其包括具有表面的基板、绝缘层以及像素电极。绝缘层定义出第一区以及围绕第一区的第二区。第一区具有第一区顶面而第二区具有第二区顶面。第一区顶面至表面的第一距离小于第二区顶面至表面的第二距离。像素电极由第一区顶面连续地延伸至第二区顶面,其中像素电极具有主干开口以及连通于主干开口的多个狭缝开口。主干开口沿十字形轨迹分布以划分出多个配向区。同一个配向区中的狭缝开口彼此平行而在相邻两个狭缝开口之间定义出像素电极的一个条纹部,且十字形轨迹的交叉处位于第一区中。另提供一种显示面板。
The present invention discloses a pixel structure, which includes a substrate having a surface, an insulating layer and a pixel electrode. The insulating layer defines a first area and a second area surrounding the first area. The first area has a first area top surface and the second area has a second area top surface. The first distance from the top surface of the first area to the surface is less than the second distance from the top surface of the second area to the surface. The pixel electrode extends continuously from the top surface of the first area to the top surface of the second area, wherein the pixel electrode has a trunk opening and a plurality of slit openings connected to the trunk opening. The trunk openings are distributed along a cross-shaped track to divide a plurality of alignment areas. The slit openings in the same alignment area are parallel to each other and define a stripe portion of the pixel electrode between two adjacent slit openings, and the intersection of the cross-shaped track is located in the first area. A display panel is also provided.
Description
技术领域technical field
本发明是有关于一种像素结构以及显示面板,且特别是有关于一种有助于提升光穿透率的像素结构以及应用所述像素结构的显示面板。The present invention relates to a pixel structure and a display panel, and in particular to a pixel structure that helps to improve light transmittance and a display panel using the pixel structure.
背景技术Background technique
目前,市场对于液晶显示面板的性能要求包括高对比(high contrast ratio)、无灰阶反转(no gray scale inversion)、低色偏(low color shift)、高亮度(highluminance)、高色饱和度、快速反应与广视角等特性。目前能够达成广视角要求的技术包括了扭转向列型(Twisted Nematic,TN)液晶搭配广视角膜(wide viewing film)、共平面切换式(In-Plane Switching,IPS)液晶显示面板、边际场切换式(Fringe Field Switching)液晶显示面板与多域垂直配向(Multi-domain Vertical Alignment,MVA)液晶显示面板等。Currently, the performance requirements of the market for LCD panels include high contrast ratio, no gray scale inversion, low color shift, high luminance, and high color saturation. , quick response and wide viewing angle. At present, the technologies that can meet the requirement of wide viewing angle include Twisted Nematic (TN) liquid crystal with wide viewing film (wide viewing film), in-plane switching (In-Plane Switching, IPS) liquid crystal display panel, marginal field switching Type (Fringe Field Switching) liquid crystal display panel, multi-domain vertical alignment (Multi-domain Vertical Alignment, MVA) liquid crystal display panel, etc.
在现有多域垂直配向液晶显示面板中,像素电极会形成多个狭缝开口,藉此控制液晶层的多个液晶分子朝多种方向倾倒,从而达到广视角的目的。然而,液晶分子在非均匀电场的作用下会感受到不同的电场大小与方向,导致部分液晶分子朝非预期的方向倾倒,而在对应像素电极的中间或边缘处产生非期望的错向线(disclination line)以及错向点(disclination node),进而影响显示面板的光穿透率。In the existing multi-domain vertical alignment liquid crystal display panel, the pixel electrodes form a plurality of slit openings, thereby controlling the liquid crystal molecules in the liquid crystal layer to fall in various directions, so as to achieve the purpose of wide viewing angle. However, liquid crystal molecules will experience different electric field magnitudes and directions under the action of a non-uniform electric field, causing some liquid crystal molecules to fall in unexpected directions, and produce undesired dislocation lines ( disclination line) and disclination node, thereby affecting the light transmittance of the display panel.
发明内容Contents of the invention
本发明提供一种像素结构,其有助于提升光穿透率。The invention provides a pixel structure, which helps to improve the light transmittance.
本发明提供一种显示面板,其应用上述像素结构而具有理想的光穿透率。The present invention provides a display panel, which adopts the above-mentioned pixel structure and has ideal light transmittance.
本发明的一种像素结构,其包括基板、绝缘层以及像素电极。基板具有表面。绝缘层配置于基板上而定义出第一区以及第二区且第二区围绕在第一区周边,其中第一区具有第一区顶面而第二区具有第二区顶面。第一区顶面至表面的第一距离小于第二区顶面至表面的第二距离。像素电极配置于基板上,且像素电极的至少部分面积由第一区顶面连续地延伸至第二区顶面,其中像素电极具有主干开口以及连通于主干开口的多个狭缝开口。主干开口沿十字形轨迹分布以划分出多个配向区。同一个配向区中的狭缝开口彼此平行而在相邻两个狭缝开口之间定义出像素电极的一个条纹部,且十字形轨迹的交叉处位于第一区中。A pixel structure of the present invention includes a substrate, an insulating layer and a pixel electrode. The substrate has a surface. The insulating layer is disposed on the substrate to define a first area and a second area, and the second area surrounds the first area, wherein the first area has a top surface of the first area and the second area has a top surface of the second area. A first distance from the top surface of the first region to the surface is smaller than a second distance from the top surface of the second region to the surface. The pixel electrode is arranged on the substrate, and at least part of the area of the pixel electrode extends continuously from the top surface of the first region to the top surface of the second region, wherein the pixel electrode has a trunk opening and a plurality of slit openings connected to the trunk opening. The backbone openings are distributed along a cross-shaped track to define multiple alignment regions. The slit openings in the same alignment area are parallel to each other to define a stripe portion of the pixel electrode between two adjacent slit openings, and the intersection of the cross-shaped tracks is located in the first area.
本发明的一种显示面板,其包括上述的多个像素结构以及液晶层。液晶层的液晶分子由像素结构驱动,且在像素结构驱动下,液晶分子皆向第二区倾倒。A display panel of the present invention includes the above-mentioned plurality of pixel structures and a liquid crystal layer. The liquid crystal molecules in the liquid crystal layer are driven by the pixel structure, and driven by the pixel structure, the liquid crystal molecules are all dumped to the second area.
基于上述,本发明实施例的像素结构利用像素电极的边缘高于中心的设计,使液晶分子在驱动时稳定地向外倾倒,而有助于提升光穿透率,且使应用上述像素结构的显示面板能够具有理想的光穿透率。Based on the above, the pixel structure of the embodiment of the present invention utilizes the design that the edge of the pixel electrode is higher than the center, so that the liquid crystal molecules can be stably tilted outward during driving, which helps to improve the light transmittance, and makes the pixel structure using the above design The display panel can have ideal light transmittance.
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附图式作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.
附图说明Description of drawings
图1A是依照本发明的一实施例的一种像素结构的上视示意图。FIG. 1A is a schematic top view of a pixel structure according to an embodiment of the present invention.
图1B是图1A的像素结构的一实施例的局部放大示意图。FIG. 1B is a partially enlarged schematic diagram of an embodiment of the pixel structure in FIG. 1A .
图1C及图1D分别是沿图1B的剖线I-I、II-II的剖面示意图。FIG. 1C and FIG. 1D are schematic cross-sectional views along the section lines I-I and II-II in FIG. 1B , respectively.
图1E是图1C中区域C的另一实施型态。FIG. 1E is another embodiment of the area C in FIG. 1C .
图2A是图1A的像素结构的另一实施例的局部放大示意图。FIG. 2A is a partially enlarged schematic view of another embodiment of the pixel structure in FIG. 1A .
图2B及图2C分别是沿图2A的剖线III-III、IV-IV的剖面示意图。FIG. 2B and FIG. 2C are schematic cross-sectional views along line III-III and IV-IV in FIG. 2A , respectively.
图3至图10分别是图1A的像素结构在其他实施例中的局部放大示意图。3 to 10 are partial enlarged schematic diagrams of the pixel structure in FIG. 1A in other embodiments, respectively.
图11是依照本发明的一实施例的一种显示面板的剖面示意图。FIG. 11 is a schematic cross-sectional view of a display panel according to an embodiment of the present invention.
其中,附图标记:Among them, reference signs:
10:显示面板10: Display panel
14:液晶层14: Liquid crystal layer
16:对向基板16: opposite substrate
12、100、100A、100B、100C、100D、100E、100F、100G、100H、100I:像素结构12, 100, 100A, 100B, 100C, 100D, 100E, 100F, 100G, 100H, 100I: pixel structure
110:基板110: Substrate
120:绝缘层120: insulating layer
130、130A、130B、130C、130D、130E、130F、130G:像素电极130, 130A, 130B, 130C, 130D, 130E, 130F, 130G: pixel electrodes
132:条纹部132: Stripe department
134、134A、134B、134C:周边连接部134, 134A, 134B, 134C: peripheral connection part
136:角落图案部136: Corner pattern department
138、138A、138B:主干连接部138, 138A, 138B: trunk connection part
A1、A1’:第一区A1, A1': the first area
A11’:中心部A11': Center
A12’:凸出部A12': Protrusion
A2:第二区A2: The second area
A3:交界区A3: Junction area
AA:配向区AA: Alignment Area
AD:主动元件AD: active element
B:交界B: Junction
CE:共用电极层CE: common electrode layer
CH:通道层CH: channel layer
D1:第一距离D1: first distance
D2:第二距离D2: second distance
DE:漏极DE: Drain
DL:数据线DL: data line
E:边缘E: edge
G:间隙G: Gap
GE:栅极GE: Gate
I-I、II-II、III-III、IV-IV:剖线I-I, II-II, III-III, IV-IV: broken lines
IC:内轮廓IC: inner contour
IT、W、W1、W2、W3、W4、W5:宽度IT, W, W1, W2, W3, W4, W5: Width
OC:外轮廓OC: outer contour
PL、PW:分量PL, PW: component
S1:表面S1: surface
SE:源极SE: source
SL:扫描线SL: scan line
SO:狭缝开口SO: slit opening
SUB:透光基板SUB: light-transmitting substrate
T1:第一区顶面T1: the top surface of the first zone
T2:第二区顶面T2: the top surface of the second zone
T3:倾斜面T3: sloped surface
TO:主干开口TO: trunk opening
TP:转折点TP: turning point
U:容置空间U: storage space
X:交叉处X: intersection
θ:夹角θ: included angle
具体实施方式Detailed ways
以下结合附图和具体实施例对本发明进行详细描述,但不作为对本发明的限定。The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments, but not as a limitation of the present invention.
图1A是依照本发明的一实施例的一种像素结构的上视示意图。图1B是图1A的像素结构的一实施例的局部放大示意图。图1C及图1D分别是沿图1B的剖线I-I、II-II的剖面示意图。请参照图1A至图1D,像素结构100包括基板110、绝缘层120以及像素电极130。基板110可以是玻璃基板、硅基板、可挠式塑胶基板或是已知任何可应用于制作显示面板的基板。基板110具有表面S1。绝缘层120以及像素电极130配置于表面S1上,且绝缘层120以及像素电极130不限于与表面S1直接接触。FIG. 1A is a schematic top view of a pixel structure according to an embodiment of the present invention. FIG. 1B is a partially enlarged schematic diagram of an embodiment of the pixel structure in FIG. 1A . FIG. 1C and FIG. 1D are schematic cross-sectional views along the section lines I-I and II-II in FIG. 1B , respectively. Referring to FIGS. 1A to 1D , the pixel structure 100 includes a substrate 110 , an insulating layer 120 and a pixel electrode 130 . The substrate 110 can be a glass substrate, a silicon substrate, a flexible plastic substrate, or any known substrate that can be used in making display panels. The substrate 110 has a surface S1. The insulating layer 120 and the pixel electrode 130 are disposed on the surface S1, and the insulating layer 120 and the pixel electrode 130 are not limited to being in direct contact with the surface S1.
具体地,表面S1上可先制作有其他膜层或构件,才制作绝缘层120以及像素电极130。举例而言,制作像素电极130之前,表面S1上可先形成有扫描线SL、数据线DL以及主动元件AD。扫描线SL与数据线DL彼此交错,且例如是彼此垂直却不相接触。主动元件AD分别与扫描线SL、数据线DL以及像素电极130电性连接。Specifically, other film layers or components may be formed on the surface S1 before the insulating layer 120 and the pixel electrode 130 are formed. For example, before forming the pixel electrode 130, the scan line SL, the data line DL and the active device AD may be formed on the surface S1. The scan lines SL and the data lines DL intersect with each other, and for example, are perpendicular to each other but do not touch each other. The active device AD is electrically connected to the scan line SL, the data line DL and the pixel electrode 130 respectively.
如图1A所示,主动元件AD具有栅极GE、、通道层CH、源极SE以及漏极DE,其中栅极GE连接于扫描线SL,源极SE连接于数据线DL而漏极DE连接于像素电极130。主动元件AD中的栅极GE与通道层CH必须分隔开来而不相接触,扫描线SL与数据线DL也必须彼此分隔而不相接触,且像素电极130也不能直接接触于扫描线SL、数据线DL与通道层CH。因此,像素结构100中设置有绝缘层120来实现这些构件之间的分隔。以本实施例而言,绝缘层120不需限定为单一层的结构,而可以是由多个绝缘材料层堆叠而成。举例而言,绝缘层120可包括未绘示的第一绝缘材料层以及第二绝缘材料层,其中第一绝缘材料层设置于栅极GE与通道层CH之间以及扫描线SL与数据线DL之间,而第二绝缘材料层设置于像素电极130与数据线DL之间以及像素电极130与通道层CH之间,但不限于此。在另一实施例中,绝缘层120也可为单一层的结构,且像素结构100中可配置有其他绝缘层。另外,绝缘层120不需限定以单一材料组成,其中构成绝缘层120的绝缘材料可以选自由氧化硅、氮化硅、氮氧化硅、绝缘光阻材料、有机绝缘材料或其他可提供绝缘作用的材料中的其中一者或组合。As shown in Figure 1A, the active device AD has a gate GE, a channel layer CH, a source SE and a drain DE, wherein the gate GE is connected to the scan line SL, the source SE is connected to the data line DL and the drain DE is connected to on the pixel electrode 130 . The gate GE in the active device AD must be separated from the channel layer CH without contact, the scan line SL and the data line DL must also be separated from each other without contact, and the pixel electrode 130 cannot directly contact the scan line SL. , the data line DL and the channel layer CH. Therefore, the insulating layer 120 is disposed in the pixel structure 100 to realize separation between these components. In this embodiment, the insulating layer 120 is not limited to a single-layer structure, but may be formed by stacking multiple insulating material layers. For example, the insulating layer 120 may include a first insulating material layer and a second insulating material layer not shown, wherein the first insulating material layer is disposed between the gate GE and the channel layer CH and the scan line SL and the data line DL between, and the second insulating material layer is disposed between the pixel electrode 130 and the data line DL and between the pixel electrode 130 and the channel layer CH, but not limited thereto. In another embodiment, the insulating layer 120 can also be a single-layer structure, and other insulating layers can be configured in the pixel structure 100 . In addition, the insulating layer 120 is not limited to be composed of a single material, and the insulating material constituting the insulating layer 120 can be selected from silicon oxide, silicon nitride, silicon oxynitride, insulating photoresist material, organic insulating material or other insulating materials. One or a combination of materials.
在制作像素电极130之前,绝缘层120可以被图案化而定义出第一区A1以及围绕在第一区A1周边的第二区A2。在本实施例中,第一区A1与第二区A2的交界B构成一封闭图案。图1B以粗虚线标示出第一区A1与第二区A2的交界B,其中粗虚线以内为第一区A1,而粗虚线以外为第二区A2。所述封闭图案例如为图1B所示的方形图案,亦即,第一区A1与第二区A2的交界B沿着方形图案的轮廓分布。Before forming the pixel electrode 130, the insulating layer 120 may be patterned to define a first area A1 and a second area A2 surrounding the first area A1. In this embodiment, the boundary B between the first area A1 and the second area A2 forms a closed pattern. FIG. 1B shows the boundary B between the first area A1 and the second area A2 with a thick dashed line, wherein the first area A1 is inside the thick dashed line, and the second area A2 is outside the thick dashed line. The closed pattern is, for example, a square pattern as shown in FIG. 1B , that is, the boundary B between the first area A1 and the second area A2 is distributed along the outline of the square pattern.
第一区A1与第二区A2之间具有高低断差。进一步而言,第一区A1具有第一区顶面T1,而第二区A2具有第二区顶面T2。第一区顶面T1以及第二区顶面T2可以为平行于表面S1的平面,且第一区顶面T1至表面S1的第一距离D1小于第二区顶面T2至表面S1的第二距离D2。举例而言,第一距离D1与第二距离D2的差可介于0.3微米至0.9微米之间,且较佳为0.5微米。There is a height difference between the first area A1 and the second area A2. Further, the first area A1 has a top surface T1 of the first area, and the second area A2 has a top surface T2 of the second area. The top surface T1 of the first region and the top surface T2 of the second region may be planes parallel to the surface S1, and the first distance D1 from the top surface T1 of the first region to the surface S1 is smaller than the second distance between the top surface T2 of the second region and the surface S1. distance D2. For example, the difference between the first distance D1 and the second distance D2 may be between 0.3 μm and 0.9 μm, and is preferably 0.5 μm.
在本实施例中,绝缘层120由多层不同材料的绝缘材料层所构成时,绝缘层120在第一区顶面T1的材质与绝缘层120在第二区顶面T2的材质可以为相同或是不同。换言之,绝缘层120由多层不同材料的绝缘材料层所构成,且最顶层的绝缘材料层在第一区A1中局部被减薄而构成第一区顶面T1,则绝缘层120在第一区顶面T1的材质与绝缘层120在第二区顶面T2的材质可以为相同。另外,绝缘层120由多层不同材料的绝缘材料层所构成,且最顶层的绝缘材料层在第一区A1中完全被移除而使次顶层的表面构成第一区顶面T1,则绝缘层120在第一区顶面T1的材质与绝缘层120在第二区顶面T2的材质即可能为不同。In this embodiment, when the insulating layer 120 is composed of multiple insulating material layers of different materials, the material of the insulating layer 120 on the top surface T1 of the first region and the material of the insulating layer 120 on the top surface T2 of the second region may be the same. or different. In other words, the insulating layer 120 is composed of multiple insulating material layers of different materials, and the top insulating material layer is partially thinned in the first region A1 to form the top surface T1 of the first region, then the insulating layer 120 is formed in the first region A1. The material of the top surface T1 of the region may be the same as the material of the insulating layer 120 on the top surface T2 of the second region. In addition, the insulating layer 120 is composed of multiple insulating material layers of different materials, and the top insulating material layer is completely removed in the first region A1 so that the surface of the second top layer constitutes the top surface T1 of the first region, then the insulating The material of the layer 120 on the top surface T1 of the first region may be different from the material of the insulating layer 120 on the top surface T2 of the second region.
像素电极130形成于绝缘层120之后,且像素电极130与漏极DE彼此电性连接。如图1C及图1D所示,像素电极130的至少部分面积由第一区顶面T1连续地延伸至第二区顶面T2。具体地,相对凹陷的第一区A1形成一凹陷的容置空间U,像素电极130配置于此容置空间U内,且像素电极130的边缘由此相对凹陷的容置空间U向外延伸至相对凸起的第二区顶面T2。由于第二区顶面T2高于第一区顶面T1,因此位于第二区A2中的像素电极130会高于位于第一区A1中的像素电极130。藉由此架高像素电极130边缘的设计,本实施例像素结构100应用于液晶显示器时可改变驱动时电力线的走向及电力线的区域密度,从而能够控制液晶分子往预定的方向倾倒。以负型液晶为例,负型液晶分子在电场的作用下,其短轴会沿着电场的方向排列。架高像素电极130边缘的设计可使负型液晶分子在驱动时稳定地向外倾倒,从而能够提升液晶效率,并可强化将错向点(disclination node)限定于像素结构100边缘(如交界B的角落)的能力。如此一来,将有助于降低非期望的错向线或错向点在像素结构100的中心区域(例如第一区A1)生成的机率。因此,像素结构100的光穿透率可有效地提升,且应用像素结构100的显示面板可具有理想的光穿透率以及显示品质。The pixel electrode 130 is formed behind the insulating layer 120, and the pixel electrode 130 and the drain DE are electrically connected to each other. As shown in FIG. 1C and FIG. 1D , at least part of the area of the pixel electrode 130 extends continuously from the top surface T1 of the first region to the top surface T2 of the second region. Specifically, the relatively recessed first area A1 forms a recessed accommodating space U, the pixel electrode 130 is disposed in this accommodating space U, and the edge of the pixel electrode 130 extends outward from the relatively recessed accommodating space U to The relatively raised top surface T2 of the second zone. Since the top surface T2 of the second area is higher than the top surface T1 of the first area, the pixel electrode 130 located in the second area A2 is higher than the pixel electrode 130 located in the first area A1. With the design of elevating the edge of the pixel electrode 130, when the pixel structure 100 of this embodiment is applied to a liquid crystal display, the direction of the electric force line and the area density of the electric force line during driving can be changed, so that the liquid crystal molecules can be controlled to fall in a predetermined direction. Taking the negative liquid crystal as an example, under the action of the electric field, the short axes of the negative liquid crystal molecules will be aligned along the direction of the electric field. The design of elevating the edge of the pixel electrode 130 can make the negative-type liquid crystal molecules fall stably outward during driving, thereby improving the efficiency of the liquid crystal, and can strengthen the limitation of the disclination node (disclination node) on the edge of the pixel structure 100 (such as the junction B corner) capabilities. In this way, it will help to reduce the probability of undesired dislocation lines or dislocation points being generated in the central area of the pixel structure 100 (eg, the first region A1 ). Therefore, the light transmittance of the pixel structure 100 can be effectively improved, and the display panel using the pixel structure 100 can have ideal light transmittance and display quality.
在本实施例中,第一区顶面T1以及第二区顶面T2的交界B由一陡峭面构成,但不限于此。图1E是图1C中区域C的另一实施型态。如图1E所示,依据不同的制程方式或制程参数,第一区A1与第二区A2之间可能存在一交界区A3,其中交界区A3具有连接于第一区顶面T1与第二区顶面T2之间的一倾斜面T3,且倾斜面T3与基板110的表面S1的夹角θ例如大于80度,以较佳地稳定液晶倒向。在本实施例中,第一区顶面T1与第二区顶面T2可以视为实质上平行,而倾斜面T3则连接于此两顶面之间。In this embodiment, the boundary B between the top surface T1 of the first region and the top surface T2 of the second region is formed by a steep surface, but it is not limited thereto. FIG. 1E is another embodiment of the area C in FIG. 1C . As shown in Figure 1E, depending on different process methods or process parameters, there may be a junction area A3 between the first area A1 and the second area A2, wherein the junction area A3 has a junction area connected to the top surface T1 of the first area and the second area An inclined surface T3 between the top surfaces T2, and the included angle θ between the inclined surface T3 and the surface S1 of the substrate 110 is, for example, greater than 80 degrees, so as to better stabilize the liquid crystal inversion. In this embodiment, the top surface T1 of the first region and the top surface T2 of the second region can be considered to be substantially parallel, and the inclined surface T3 is connected between the two top surfaces.
请再参照图1B,本实施例的像素电极130具有主干开口TO以及连通于主干开口TO的多个狭缝开口SO。主干开口TO沿十字形轨迹分布,以划分出多个配向区AA(如4个配向区AA)。此外,十字形轨迹的交叉处X位于第一区A1中,且例如位于像素电极130的中心,但不限于此。本实施例以主干开口TO进行配向有助于缩减对应像素电极130中间处的错向线的线宽,从而能够在广视角的优势下兼顾光穿透率。在本实施例中,主干开口TO的宽度IT例如介于2微米至8微米之间,且较佳为4微米。Referring to FIG. 1B again, the pixel electrode 130 of this embodiment has a trunk opening TO and a plurality of slit openings SO connected to the trunk opening TO. The trunk openings TO are distributed along a cross-shaped track to define a plurality of alignment areas AA (for example, four alignment areas AA). In addition, the intersection X of the cross-shaped tracks is located in the first area A1, such as, but not limited to, the center of the pixel electrode 130 . In this embodiment, aligning with the trunk opening TO helps to reduce the line width of the misalignment line corresponding to the middle of the pixel electrode 130 , so that light transmittance can be taken into account while taking advantage of a wide viewing angle. In this embodiment, the width IT of the trunk opening TO is, for example, between 2 micrometers and 8 micrometers, and is preferably 4 micrometers.
同一个配向区AA中的狭缝开口SO彼此平行而在相邻两个狭缝开口SO之间定义出像素电极130的一个条纹部132。在本实施例中,同一个配向区AA中的条纹部132在排列方向上的宽度W为定值,亦即条纹部132呈等宽的设计,但本发明不限于此。在另一实施例中,条纹部132的宽度W亦可由外而内地逐渐减少,亦即条纹部132的宽度W朝靠近交叉处X的方向逐渐减少。在此架构下,狭缝开口SO的宽度则由外(远离交叉处X)而内(接近交叉处X)地逐渐增加。以下实施例皆适用此改良,便不再赘述。The slit openings SO in the same alignment area AA are parallel to each other, and a stripe portion 132 of the pixel electrode 130 is defined between two adjacent slit openings SO. In this embodiment, the width W of the stripes 132 in the same alignment area AA in the alignment direction is constant, that is, the stripes 132 are designed with equal widths, but the invention is not limited thereto. In another embodiment, the width W of the striped portion 132 may also gradually decrease from outside to inside, that is, the width W of the striped portion 132 gradually decreases toward the intersection X. As shown in FIG. Under this framework, the width of the slit opening SO gradually increases from the outside (farther from the intersection X) to the inside (closer to the intersection X). This improvement is applicable to the following embodiments, and will not be repeated here.
像素电极130可进一步包括周边连接部134。周边连接部134部分位于第一区A1中且部分位于第二区A2中。在本实施例中,周边连接部134位于第一区A1中的宽度W1(即周边连接部134位于第一区A1中的边缘与交界B的水平距离)例如大于0微米且小于或等于4微米。此外,周边连接部134位于第二区A2中的宽度W2(即周边连接部134位于第二区A2中的边缘与交界B的水平距离)例如介于2微米至10微米之间。The pixel electrode 130 may further include a peripheral connection part 134 . The peripheral connection portion 134 is partially located in the first area A1 and partially located in the second area A2. In this embodiment, the width W1 of the peripheral connection portion 134 located in the first area A1 (that is, the horizontal distance between the edge of the peripheral connection portion 134 located in the first area A1 and the junction B) is, for example, greater than 0 μm and less than or equal to 4 μm . In addition, the width W2 of the peripheral connection portion 134 in the second area A2 (ie, the horizontal distance between the edge of the peripheral connection portion 134 in the second area A2 and the boundary B) is, for example, between 2 μm and 10 μm.
条纹部132由主干开口TO向外延伸而连接至周边连接部134。在本实施例中,周边连接部134具有环形图案而条纹部132位于环形图案所环绕的面积内。此外,周边连接部134的外轮廓OC及内轮廓IC(内轮廓由所有条纹部134与周边连接部134的交界连线而成)实质上顺应着(conform to)第一区顶面T1与第二区顶面T2的交界B。因此,本实施例的周边连接部134的外轮廓OC及内轮廓IC亦为方形,例如为正方形,但不限于此。在另一实施例中,像素电极130也可以是长方形,且其长宽比可介于1至1.5之间。此时,周边连接部134的外轮廓OC及内轮廓IC同为长方形。The stripe portion 132 extends outward from the trunk opening TO and is connected to the peripheral connection portion 134 . In this embodiment, the peripheral connection portion 134 has a ring pattern and the stripe portion 132 is located in an area surrounded by the ring pattern. In addition, the outer contour OC and the inner contour IC of the peripheral connecting portion 134 (the inner contour is formed by connecting lines between all the stripe portions 134 and the peripheral connecting portion 134 ) substantially conform to (conform to) the top surface T1 of the first region and the second region. The junction B of the top surface T2 of the second district. Therefore, the outer contour OC and the inner contour IC of the peripheral connection portion 134 in this embodiment are also square, for example, square, but not limited thereto. In another embodiment, the pixel electrode 130 may also be rectangular, and its aspect ratio may be between 1 and 1.5. At this time, the outer contour OC and the inner contour IC of the peripheral connection portion 134 are both rectangular.
图2A是图1A的像素结构的另一实施例的局部放大示意图。图2B及图2C分别是沿图2A的剖线III-III、IV-IV的剖面示意图。请参照图2A至图2C,像素结构100A大致相同于像素结构100,且相同的元件以相同的标号表示,于此不再赘述。像素结构100A与像素结构100的主要差异在于,像素结构100A的第一区A1’的面积具有一中心部A11’以及由中心部A11’向外延伸出去的多个凸出部A12’,且凸出部A12’的延伸轨迹朝向第一区A1’的中心延伸时将中心部A11’划分成上述多个配向区AA。具体地,凸出部A12’例如分别对应主干开口TO的末端且沿着主干开口TO的十字形轨迹延伸出去。凸出部A12’的设置有助于使液晶倒向更为稳定,且能够进一步强化将错向点固定在凸出部A12’与周边连接部134的重叠处的能力,使对应主干开口TO的错向线相对细且相对准直,从而有助于进一步提升光穿透率。在本实施例中,凸出部A12’在垂直其延伸方向上的宽度W3例如大于3微米。FIG. 2A is a partially enlarged schematic view of another embodiment of the pixel structure in FIG. 1A . FIG. 2B and FIG. 2C are schematic cross-sectional views along line III-III and IV-IV in FIG. 2A , respectively. Please refer to FIG. 2A to FIG. 2C , the pixel structure 100A is substantially the same as the pixel structure 100 , and the same elements are denoted by the same reference numerals, and details are not repeated here. The main difference between the pixel structure 100A and the pixel structure 100 is that the area of the first area A1' of the pixel structure 100A has a central part A11' and a plurality of protruding parts A12' extending outward from the central part A11', and the convex When the extension track of the out portion A12 ′ extends toward the center of the first area A1 ′, the central portion A11 ′ is divided into the above-mentioned plurality of alignment areas AA. Specifically, the protrusions A12', for example, respectively correspond to the ends of the trunk opening TO and extend out along the cross-shaped track of the trunk opening TO. The arrangement of the protrusion A12' helps to make the liquid crystal reversing more stable, and can further strengthen the ability to fix the dislocation point at the overlap of the protrusion A12' and the peripheral connection part 134, so that the corresponding trunk opening TO The misalignment lines are relatively thin and collimated, which helps to further improve the light transmittance. In this embodiment, the width W3 of the protrusion A12' in the direction perpendicular to its extension is greater than 3 microns, for example.
以下以图3至图10说明像素结构其他可实施的型态,但本发明不限于所列举的实施例,任何所属技术领域中具有通常知识者,当可将不同实施例的技术加以组合、变更,而其皆落入本案所欲保护的发明。图3至图10分别是图1A的像素结构的其他实施例的局部放大示意图。请先参照图3,像素结构100B大致相同于像素结构100A,且相同的元件以相同的标号表示,于此不再赘述。像素结构100B与像素结构100A的主要差异在于,像素结构100B的像素电极130A更包括角落图案部136。角落图案部136设置于周边连接部134所构成的方形的角落。角落图案部136的设置有助于进一步强化将错向点固定于像素结构100B边缘(对应角落图案部136的位置)的能力,使液晶倒向更为稳定。在本实施例中,角落图案部136的凸出宽度W4(即角落图案部136的边缘至周边连接部134的边缘的最短距离)例如介于1微米至4微米之间。3 to 10 below illustrate other implementable types of pixel structure, but the present invention is not limited to the listed embodiments, anyone with ordinary knowledge in the technical field can combine and change the techniques of different embodiments , and all of them fall into the inventions to be protected in this case. 3 to 10 are partially enlarged schematic diagrams of other embodiments of the pixel structure in FIG. 1A . Please refer to FIG. 3 first, the pixel structure 100B is substantially the same as the pixel structure 100A, and the same components are denoted by the same reference numerals, which will not be repeated here. The main difference between the pixel structure 100B and the pixel structure 100A is that the pixel electrode 130A of the pixel structure 100B further includes a corner pattern portion 136 . The corner pattern portion 136 is disposed at a corner of the square formed by the peripheral connection portion 134 . The disposition of the corner pattern portion 136 helps to further strengthen the ability to fix the dislocation point on the edge of the pixel structure 100B (the position corresponding to the corner pattern portion 136 ), so as to make the liquid crystal reversing more stable. In this embodiment, the protruding width W4 of the corner pattern portion 136 (ie, the shortest distance from the edge of the corner pattern portion 136 to the edge of the peripheral connection portion 134 ) is, for example, between 1 μm and 4 μm.
请参照图4,像素结构100C大致相同于像素结构100,且相同的元件以相同的标号表示,于此不再赘述。像素结构100C与像素结构100的主要差异在于,像素结构100C的第一区顶面T1与第二区顶面T2的交界B沿着一几何图案的轮廓分布。所述几何图案在第一方向D1上的宽度是由中央向外逐渐缩小,且在垂直于第一方向D1的第二方向D2上的宽度是由中央向外逐渐缩小。并且,几何图案的相邻两边缘E在主干开口TO所划分出的四个配向区AA中分别形成一个转折点TP。各边缘E对应主干开口TO的十字型轨迹具有一长一短的分量PL、PW,且分量PL与分量PW的比值PL/PW大于或等于0.0185。Please refer to FIG. 4 , the pixel structure 100C is substantially the same as the pixel structure 100 , and the same elements are denoted by the same reference numerals, which will not be repeated here. The main difference between the pixel structure 100C and the pixel structure 100 is that the boundary B between the top surface T1 of the first region and the top surface T2 of the second region of the pixel structure 100C is distributed along the contour of a geometric pattern. The width of the geometric pattern in the first direction D1 gradually decreases from the center to the outside, and the width in the second direction D2 perpendicular to the first direction D1 gradually decreases from the center to the outside. Moreover, two adjacent edges E of the geometric pattern respectively form a turning point TP in the four alignment areas AA divided by the trunk opening TO. Each edge E corresponds to the cross-shaped track of the trunk opening TO with one long and one short component PL, PW, and the ratio PL/PW of the component PL to the component PW is greater than or equal to 0.0185.
在本实施例中,周边连接部134的外轮廓OC及内轮廓IC皆维持前述方形的设计,且至少部分条纹部132重叠于第一区顶面T1与第二区顶面T2的交界B,且部分条纹部132由第一区顶面T1延伸至第二区顶面T2,但本发明不限于此。如图5所示,像素电极130B的周边连接部134A的内轮廓IC亦可顺应着第一区顶面T1与第二区顶面T2的交界B而具有与上述几何图案实质上相同的轮廓。或者,如图6所示,像素电极130C的周边连接部134B的外轮廓OC及内轮廓IC可共同顺应着第一区顶面T1与第二区顶面T2的交界B而具有与上述几何图案实质上相同的轮廓。在图5及图6的架构下,所有的条纹部132皆位于周边连接部134A、134B的环形图案所环绕的面积内,亦即,所有的条纹部132皆配置于第一区顶面T1上。此外,周边连接部134A、134B重叠且横越第一区顶面T1与第二区顶面T2的交界B。In this embodiment, both the outer contour OC and the inner contour IC of the peripheral connection portion 134 maintain the aforementioned square design, and at least part of the stripe portion 132 overlaps the boundary B between the top surface T1 of the first region and the top surface T2 of the second region, Moreover, part of the stripe portion 132 extends from the top surface T1 of the first region to the top surface T2 of the second region, but the invention is not limited thereto. As shown in FIG. 5 , the inner contour IC of the peripheral connection portion 134A of the pixel electrode 130B may also follow the boundary B between the top surface T1 of the first region and the top surface T2 of the second region, and have substantially the same contour as the above geometric pattern. Alternatively, as shown in FIG. 6 , the outer contour OC and inner contour IC of the peripheral connection portion 134B of the pixel electrode 130C may jointly conform to the boundary B between the top surface T1 of the first region and the top surface T2 of the second region to have the same geometric pattern as above. Essentially the same profile. Under the framework of FIG. 5 and FIG. 6, all the stripe portions 132 are located in the area surrounded by the circular pattern of the peripheral connection portions 134A, 134B, that is, all the stripe portions 132 are arranged on the top surface T1 of the first region . In addition, the peripheral connection portions 134A, 134B overlap and cross the boundary B between the top surface T1 of the first region and the top surface T2 of the second region.
在图4至图6的像素结构100C、110D、100E中,利用周边连接部134B的外轮廓OC、周边连接部134A、134B的内轮廓IC以及交界B的其中至少一者采用轮廓渐变的设计,有助于进一步稳定液晶倒向,从而达到前述提升液晶效率及光穿透率的效果。In the pixel structures 100C, 110D, and 100E in FIGS. 4 to 6 , at least one of the outer contour OC of the peripheral connection portion 134B, the inner contour IC of the peripheral connection portions 134A, 134B, and the boundary B adopts a gradient design, It helps to further stabilize the inversion of the liquid crystal, so as to achieve the above-mentioned effect of improving the efficiency of the liquid crystal and the light transmittance.
请参照图7,像素结构100F大致相同于像素结构100,且相同的元件以相同的标号表示,于此不再赘述。像素结构100F与像素结构100的主要差异在于,像素结构100F的周边连接部134C由多个间隙G分隔成多段且各间隙G位于主干开口TO的末端。间隙G使周边连接部134C彼此结构上分离,且间隙G可视为主干开口TO的延伸。亦即,间隙G与主干开口TO同为镂空结构。此外,各配向区AA的其中一条条纹部132朝向主干开口TO延伸出去而连接相邻的配向区AA的其中一条条纹部132。具体地,朝向主干开口TO延伸出去的条纹部132的延伸部分构成多个主干连接部138。主干连接部138位于主干开口TO中,以将各配向区AA的其中一条条纹部132连接至相邻的配向区AA的其中一条条纹部132。此外,主干连接部138不重叠十字形轨迹的交叉处X,亦即主干连接部138暴露出交叉处X。在本实施例中,主干连接部138彼此分离,且条纹部132及主干连接部138相连在一起而形成V字形,但本实施例不用以限定主干连接部138的形状及其连接于条纹部132的方式。如图8的像素电极130E所示,条纹部132及所连接的主干连接部138A亦可形成W字形。或者,图9的像素电极130F所示,位于主干开口TO中的主干连接部138B可彼此连接在一起而形成环绕于交叉处X周围的方形结构。然而,但本发明不限于上述。Please refer to FIG. 7 , the pixel structure 100F is substantially the same as the pixel structure 100 , and the same elements are denoted by the same reference numerals, so details are not repeated here. The main difference between the pixel structure 100F and the pixel structure 100 is that the peripheral connection portion 134C of the pixel structure 100F is divided into multiple sections by a plurality of gaps G, and each gap G is located at the end of the trunk opening TO. The gap G structurally separates the peripheral connection portions 134C from each other, and the gap G can be considered as an extension of the trunk opening TO. That is, the gap G and the trunk opening TO are both hollow structures. In addition, one of the stripes 132 of each alignment area AA extends toward the trunk opening TO to connect one of the stripes 132 of the adjacent alignment area AA. Specifically, the extended portion of the stripe portion 132 extending toward the trunk opening TO constitutes a plurality of trunk connection portions 138 . The trunk connection part 138 is located in the trunk opening TO to connect one of the stripe parts 132 of each alignment area AA to one of the stripe parts 132 of the adjacent alignment area AA. In addition, the trunk connecting portion 138 does not overlap the intersection X of the cross trace, that is, the trunk connecting portion 138 exposes the intersection X. In this embodiment, the backbone connecting portion 138 is separated from each other, and the stripe portion 132 and the backbone connecting portion 138 are connected together to form a V shape, but this embodiment is not intended to limit the shape of the backbone connecting portion 138 and its connection to the stripe portion 132 The way. As shown in the pixel electrode 130E in FIG. 8 , the stripe portion 132 and the connected trunk connection portion 138A may also form a W shape. Alternatively, as shown in the pixel electrode 130F in FIG. 9 , the trunk connecting portions 138B located in the trunk opening TO may be connected together to form a square structure surrounding the intersection X. Referring to FIG. However, the present invention is not limited to the above.
在像素结构100F、100G、100H中,间隙G的设置有助于使液晶倒向更为稳定,且能够进一步强化将错向点固定在对应间隙G位置的能力,从而达到前述提升液晶效率及光穿透率的效果。在这些实施例中,间隙G的宽度W5(即周边连接部134C的相邻两段之间的距离)例如大于1微米且小于或等于8微米。此外,宽度W1例如大于2微米,而宽度W2例如介于2微米至8微米之间。另外,如图10所示,像素结构100I的像素电极130G在图7的架构下进一步包括图3的角落图案部136,以进一步强化将错向点固定于像素结构100I边缘(对应角落图案部136的位置)的能力。图8及图9的像素结构100G、100H亦可同此改良,于此不再赘述。此外,图10中的宽度W1、W2、W4、W5的范围可参照上述,于此不再赘述。In the pixel structures 100F, 100G, and 100H, the setting of the gap G helps to make the liquid crystal inversion more stable, and can further strengthen the ability to fix the dislocation point at the position corresponding to the gap G, so as to achieve the aforementioned improvement of liquid crystal efficiency and optical efficiency. The effect of penetration. In these embodiments, the width W5 of the gap G (ie, the distance between two adjacent segments of the peripheral connection portion 134C) is, for example, greater than 1 micron and less than or equal to 8 microns. In addition, the width W1 is, for example, greater than 2 micrometers, and the width W2 is, for example, between 2 micrometers and 8 micrometers. In addition, as shown in FIG. 10 , the pixel electrode 130G of the pixel structure 100I further includes the corner pattern portion 136 in FIG. 3 under the framework of FIG. location) capability. The pixel structures 100G and 100H in FIG. 8 and FIG. 9 can also be improved in the same way, and will not be repeated here. In addition, the ranges of the widths W1 , W2 , W4 , and W5 in FIG. 10 can be referred to above, and will not be repeated here.
图11是依照本发明的一实施例的一种显示面板的剖面示意图。请参照图11,显示面板10包括多个像素结构12(图11仅示意性绘示出一个)以及液晶层14,其中各像素结构12可采用上述像素结构100、100A、100B、100C、100D、100E、100F、100G、100H、100I的其中一者。FIG. 11 is a schematic cross-sectional view of a display panel according to an embodiment of the present invention. Please refer to FIG. 11 , the display panel 10 includes a plurality of pixel structures 12 (only one is schematically shown in FIG. 11 ) and a liquid crystal layer 14, wherein each pixel structure 12 can adopt the above-mentioned pixel structures 100, 100A, 100B, 100C, 100D, One of 100E, 100F, 100G, 100H, 100I.
显示面板10可进一步包括一对向基板16。对向基板16配置于像素结构12的对向,且液晶层14位于对向基板16与像素结构12之间。此外,对向基板16可包括一透光基板SUB与配置其上的一共用电极层CE。共用电极层CE与像素电极130分别位于液晶层14的相对两侧,且液晶层14的液晶分子LC依据像素电极130与共用电极层CE之间的电场方向而改变其倾倒方向。以液晶分子LC为负型液晶分子为例,负型液晶分子的短轴会沿着电场的方向排列。在像素结构12的驱动下,电场方向由像素电极130指向共用电极层CE(近似垂直电场)。通过上述架高像素电极130边缘的设计,可令液晶分子LC皆向第二区A2倾倒,从而显示面板10可具有良好的光穿透率以及显示品质。The display panel 10 may further include a facing substrate 16 . The opposite substrate 16 is disposed opposite to the pixel structure 12 , and the liquid crystal layer 14 is located between the opposite substrate 16 and the pixel structure 12 . In addition, the opposite substrate 16 may include a transparent substrate SUB and a common electrode layer CE disposed thereon. The common electrode layer CE and the pixel electrode 130 are respectively located on opposite sides of the liquid crystal layer 14 , and the liquid crystal molecules LC of the liquid crystal layer 14 change their tilting direction according to the direction of the electric field between the pixel electrode 130 and the common electrode layer CE. Taking the liquid crystal molecules LC as negative type liquid crystal molecules as an example, the short axis of the negative type liquid crystal molecules will be aligned along the direction of the electric field. Driven by the pixel structure 12 , the direction of the electric field is directed from the pixel electrode 130 to the common electrode layer CE (approximately vertical electric field). Through the above-mentioned design of elevating the edge of the pixel electrode 130 , the liquid crystal molecules LC can all fall to the second area A2 , so that the display panel 10 can have good light transmittance and display quality.
综上所述,本发明实施例的像素结构藉由架高像素电极边缘的设计,使液晶分子在驱动时能够稳定地向外倾倒,而有助于提升光穿透率,且使应用上述像素结构的显示面板能够具有理想的光穿透率。To sum up, the pixel structure of the embodiment of the present invention is designed to elevate the edge of the pixel electrode, so that the liquid crystal molecules can be stably tilted outward during driving, which helps to improve the light transmittance, and makes the application of the above pixel The display panel with the structure can have ideal light transmittance.
虽然本发明已以实施例揭露如上,然其并非用以限定本发明,任何所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,故本发明的保护范围当视后附的申请专利范围所界定者为准。Although the present invention has been disclosed as above with the embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention should be defined by the scope of the appended patent application.
Claims (18)
- A kind of 1. dot structure, it is characterised in that including:One substrate, has a surface;One insulating layer, be configured on the substrate and define one first area and one second area and secondth area be centered around this first Area periphery, wherein firstth area are with one first area's top surface and secondth area is with one second area's top surface, and the firstth area top surface One first distance to the surface is less than the secondth area top surface to a second distance on the surface;AndOne pixel electrode, is configured on the substrate, and at least part area of the pixel electrode by the firstth area top surface continuously The secondth area top surface is extended to, the wherein pixel electrode has a trunk opening and is communicated in multiple slits of the trunk opening Opening, the trunk opening are distributed along cross track to mark off multiple orientation areas, and the slit in same orientation area is opened A mouth striped portion parallel to each other and that the pixel electrode is defined between two neighboring slit opening, and the cross track Infall be located in firstth area;Contoured profile of the boundary of the firstth area top surface and the secondth area top surface along a geometrical pattern.
- 2. dot structure according to claim 1, it is characterised in that the wherein court of stripe portion positioned at the respectively orientation area Extended out to the trunk opening and connect a wherein stripe portion in adjacent orientation area.
- 3. dot structure according to claim 2, it is characterised in that the pixel electrode further includes multiple Truck Connection portions, In the trunk opening, the respectively orientation area is extended out towards the trunk opening this wherein a stripe portion is connected to A wherein stripe portion in the adjacent orientation area.
- 4. dot structure according to claim 3, it is characterised in that the not overlapping cross track in the Truck Connection portion Infall.
- 5. dot structure according to claim 2, it is characterised in that the striped portion is overlapped in the firstth area top surface with being somebody's turn to do The boundary of second area's top surface.
- 6. dot structure according to claim 1, it is characterised in that the pixel electrode further includes a peripheral join, portion Divide and be located in firstth area and be partly located in secondth area, and the striped portion is extended by the trunk outward opening and is connected to The peripheral join.
- 7. dot structure according to claim 6, it is characterised in that peripheral join bar with circular pattern Line portion is located in the circular area of the circular pattern.
- 8. dot structure according to claim 6, it is characterised in that the peripheral join is separated into more by multiple gaps Section and respectively the gap is located at the end of the trunk opening.
- 9. dot structure according to claim 6, it is characterised in that the outer contour of the peripheral join is square.
- 10. dot structure according to claim 9, it is characterised in that the pixel electrode further includes corner drafting department and sets In the square corner that the peripheral join is formed.
- 11. dot structure according to claim 6, it is characterised in that the outer contour of the peripheral join is substantially complied with The boundary of the firstth area top surface and the secondth area top surface.
- 12. dot structure according to claim 1, it is characterised in that the geometrical pattern is square pattern.
- 13. dot structure according to claim 1, it is characterised in that width of the geometrical pattern on a first direction It is by being gradually reduced outside mediad, and the width in a second direction is and the first direction by being gradually reduced outside mediad It is vertical with the second direction.
- 14. dot structure according to claim 1, it is characterised in that the area in firstth area have a central part and The multiple protrusions to be stretched out away by the central part, and the center in extension track towards firstth area of the protrusion is prolonged The central part is divided into multiple orientation areas when stretching.
- 15. dot structure according to claim 1, it is characterised in that thickness of the insulating layer in firstth area is less than The thickness in secondth area.
- 16. dot structure according to claim 1, it is characterised in that the difference of first distance and the second distance between Between 0.3 micron to 0.9 micron.
- 17. dot structure according to claim 1, it is characterised in that there are a friendship between firstth area and secondth area Battery limit (BL), the junctional area have the inclined plane being connected between the firstth area top surface and the secondth area top surface, and the inclined plane is with being somebody's turn to do The angle on the surface of substrate is more than 80 degree.
- A kind of 18. display panel, it is characterised in that including:Multiple dot structures as any one of claim 1 to 17;AndOne liquid crystal layer, the liquid crystal molecule of the liquid crystal layer are driven by the dot structure, and under dot structure driving, it is described Liquid crystal molecule is all toppled over to secondth area.
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- 2015-02-11 TW TW104104522A patent/TWI528090B/en not_active IP Right Cessation
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CN1573485A (en) * | 2003-06-17 | 2005-02-02 | Lg.飞利浦Lcd有限公司 | In-plane switching mode liquid crystal display device and method of manufacturing the same |
TW200809350A (en) * | 2006-08-08 | 2008-02-16 | Au Optronics Corp | Polymer stabilized alignment LCD panel |
CN101055379A (en) * | 2007-06-08 | 2007-10-17 | 友达光电股份有限公司 | Liquid crystal display panel, optoelectronic device and manufacturing method thereof |
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CN104698697A (en) | 2015-06-10 |
TWI528090B (en) | 2016-04-01 |
TW201629602A (en) | 2016-08-16 |
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