CN104678132A - Ka frequency band base plate integrated magnetic coupling near field probe - Google Patents
Ka frequency band base plate integrated magnetic coupling near field probe Download PDFInfo
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- CN104678132A CN104678132A CN201310628600.8A CN201310628600A CN104678132A CN 104678132 A CN104678132 A CN 104678132A CN 201310628600 A CN201310628600 A CN 201310628600A CN 104678132 A CN104678132 A CN 104678132A
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Abstract
The invention relates to the technical field of field distribution detection, on-line debugging and fault diagnosis of a Ka frequency band circuit, in particular to a magnetic coupling near field probe. A Ka frequency band base plate integrated magnetic coupling near field probe comprises a first circuit base plate, a second circuit base plate, a first metal structure element, a second metal structure element and a connector. The probe has the advantages that the magnetic coupling probe based on double-layer metal medium base plates is adopted, a PCB (printed circuit board) process is adopted for being matched with simple machining process manufacturing, the manufacturing is simple, the cost is low, the size is small, and the transmission performance is good. The probe does not need plastic sleeve protection, the direct handheld operation can be realized, a special test frame is not needed, and the short circuit danger is avoided. The probe is suitable for being used for Ka frequency band circuit magnetic field measurement, the demand on the space is small, the adaptability is high, and the data measurement is more stable.
Description
Technical field
The present invention relates to the field distribution detection of Ka band circuitry, on-line debugging and fault diagnosis technology field, particularly relate to a kind of magnetic coupling near field probe.
Background technology
In circuit design field, near field probe is usually used in the EMC testing and diagnosing of circuit, reduces interference that EMC/EMI problem brings and spuious, the duty of decision circuitry.Usual magnetic probe is used for the frequency range of 1-6GHz, and the electric coupling probe based on concentric cable can be used for the frequency range of 1-20GHz, and Ka frequency range probe uses waveguide probe usually.
EMC magnetic probe and electric probe frequency of operation lower, protection plastic jacket can produce loss.Waveguide probe volume is comparatively large, is not suitable for millimetre-wave circuit test and uses.
Summary of the invention
The technical problem to be solved in the present invention:
For the demand of millimeter wave modular debugging, invent the substrate integrated magnetic coupling near field probe adapting to millimetre-wave circuit near field measurement, met module interference requirement little, simple to operate simultaneously.
Technical scheme of the present invention:
Ka frequency range substrate integrated magnetic coupling near field probe, adopts medium substrate to substitute concentric cable or waveguide, and on substrate, integrated magnetic coupling probe, transits to connector by co-planar waveguide and strip line.
Ka frequency range substrate integrated magnetic coupling near field probe, this probe comprises the first circuit substrate and second circuit substrate, the first hardware, the second hardware and connector.
First circuit substrate is T-shaped double-level-metal dielectric-slab, the vertical section in T-shaped double-level-metal dielectric-slab front etches wire from feed face to coupling surface, wire is followed successively by strip line, co-planar waveguide, transition segment, narrow feeder line and metallization coupling throughhole from top to bottom, and the metallic member of wire both sides, T-shaped double-level-metal dielectric-slab front is the ground of wire; T-shaped double-level-metal dielectric-slab reverse side above coupling surface etches T-shaped terminal, T-shaped terminal bottom for metallization coupling throughhole, the metallic member above T-shaped double-level-metal dielectric-slab reverse side T-shaped terminal is the ground of wire; Wire is communicated with the two row metalized ground through holes of the ground of T-shaped double-level-metal dielectric-slab reverse side by wire both sides on the ground in T-shaped double-level-metal dielectric-slab front.
Second circuit substrate is rectangular double-layer metal medium plate, and the size of rectangular double-layer metal medium plate is consistent with T-shaped double-level-metal dielectric-slab horizontal segment, and the left and right sides, rectangular double-layer metal medium plate front is etched to the ground of the first circuit substrate wire; Rectangular double-layer metal medium plate reverse side is the ground of the first circuit substrate wire, and the ground in rectangular double-layer metal medium plate front is communicated with two row's metalized ground through holes of the ground of rectangular double-layer metal medium plate reverse side by wire both sides.
Rectangular double-layer metal medium plate front is covered in the front of T-shaped double-level-metal dielectric-slab horizontal segment, first hardware is pressed together on rectangular double-layer metal medium plate reverse side, second hardware is pressed together on T-shaped double-level-metal dielectric-slab horizontal segment reverse side, the flange of connector is arranged on the first hardware and the second hardware, and the inner wire of connector is crimped on wire upper end.
Connector adopts coaxial connector.
Beneficial effect of the present invention:
The present invention adopts the magnetic coupling probe based on double-level-metal medium substrate to adopt PCB technology to coordinate simple mechanical processing technique manufacture, and manufacture simple cost low, volume is little, and transmission performance is good.Probe is protected without the need to plastic jacket, can direct hand-held, does not need special test frame, does not have the danger of short circuit.Be suitable for the magnetic-field measurement of Ka band circuitry, little to space requirement, strong adaptability, measurement data is more stable.
Accompanying drawing explanation
Fig. 1 is Ka frequency range substrate integrated magnetic coupling near field probe patterns.In Fig. 1,1 is the first circuit substrate, and 2 is second circuit substrate, and 3 is the first hardware, and 4 is the second hardware, and 5 is connector.
Fig. 2 is the first circuit substrate figure.In Fig. 2,6 is feed face, and 7 is coupling surface, and 8 is strip line, and 9 is co-planar waveguide, and 10 is transition segment, and 11 is narrow feeder line, and 12 is metallization coupling throughhole, and 13 is ground, and 14 is T-shaped terminal, and 15 is metalized ground through hole.
Fig. 3 is second circuit substrate figure.
Embodiment
Ka frequency range substrate integrated magnetic coupling near field probe, adopts medium substrate to substitute concentric cable or waveguide, and on substrate, integrated magnetic coupling probe, transits to connector by co-planar waveguide and strip line.
Ka frequency range substrate integrated magnetic coupling near field probe, this probe comprises the first circuit substrate and second circuit substrate, the first hardware, the second hardware and connector.
First circuit substrate is T-shaped double-level-metal dielectric-slab, T-shaped double-level-metal dielectric-slab thickness is the microwave-medium plate of thickness 0.254mm-0.508mm, the vertical section in T-shaped double-level-metal dielectric-slab front etches wire from feed face to coupling surface, wire is followed successively by strip line, co-planar waveguide, transition segment, narrow feeder line and metallization coupling throughhole from top to bottom, the width of strip line, co-planar waveguide ensures that conductor characteristic impedance is 50 ohm, retains certain interval between metallization coupling throughhole edge and coupling surface.The metallic member of wire both sides, T-shaped double-level-metal dielectric-slab front is the ground of wire, and the ground of co-planar waveguide part will be tried one's best near wire; T-shaped double-level-metal dielectric-slab reverse side above coupling surface etches T-shaped terminal, T-shaped terminal bottom for metallization coupling throughhole, the metallic member above T-shaped double-level-metal dielectric-slab reverse side T-shaped terminal is the ground of wire; The two row metalized ground through holes of wire on the ground in T-shaped double-level-metal dielectric-slab front and the ground of T-shaped double-level-metal dielectric-slab reverse side by wire both sides are communicated with, and metalized ground through hole should edge closely.
Second circuit substrate is rectangular double-layer metal medium plate, rectangular double-layer metal medium plate thickness is consistent with T-shaped double-level-metal dielectric-slab with type, the size of rectangular double-layer metal medium plate is consistent with T-shaped double-level-metal dielectric-slab horizontal segment, and the left and right sides, rectangular double-layer metal medium plate front is etched to the ground of the first circuit substrate wire; Rectangular double-layer metal medium plate reverse side is the ground of the first circuit substrate wire, the ground in rectangular double-layer metal medium plate front is communicated with two row's plated-through holes of the ground of rectangular double-layer metal medium plate reverse side by wire both sides, and metalized ground through hole should near the edge on the ground in rectangular double-layer metal medium plate front.
Connector adopts coaxial connector, and this connector can work in Ka frequency range.
Rectangular double-layer metal medium plate front is covered in the front of T-shaped double-level-metal dielectric-slab horizontal segment, first hardware is pressed together on rectangular double-layer metal medium plate reverse side, second hardware is pressed together on T-shaped double-level-metal dielectric-slab horizontal segment reverse side, by screw pressing between first hardware and the second hardware, the flange of connector is arranged on the first hardware and the second hardware, the flange of connector is installed by screw, and the inner wire of connector is crimped on wire upper end.
Example:
First circuit substrate and second circuit substrate adopt Rogers5880 sheet material, thickness 0.508mm, strip line length 6mm, width 0.8mm, co-planar waveguide length 5.8mm, width 1mm, transition segment length 1.2mm, width 0.25mm, metallization coupling throughhole diameter 0.3mm, metallization coupling throughhole edge is to coupling surface distance 0.3mm, vertical section width 0.25mm, length 0.2mm, the horizontal section length 0.7mm of T-shaped terminal, broadband 0.3mm, the spacing apart from conduction band ground is 0.15mm.Connector uses 2.92mm series connector.
Probe is placed on tested microstrip line can obtain coupled signal, and within the scope of 20 ~ 30GHz, coupling amount is between-17 ~-15dB.
Claims (2)
1.Ka frequency range substrate integrated magnetic coupling near field probe, is characterized in that, this probe comprises the first circuit substrate and second circuit substrate, the first hardware, the second hardware and connector;
First circuit substrate is T-shaped double-level-metal dielectric-slab, the vertical section in T-shaped double-level-metal dielectric-slab front etches wire from feed face to coupling surface, wire is followed successively by strip line, co-planar waveguide, transition segment, narrow feeder line and metallization coupling throughhole from top to bottom, and the metallic member of wire both sides, T-shaped double-level-metal dielectric-slab front is the ground of wire; T-shaped double-level-metal dielectric-slab reverse side above coupling surface etches T-shaped terminal, T-shaped terminal bottom for metallization coupling throughhole, the metallic member above T-shaped double-level-metal dielectric-slab reverse side T-shaped terminal is the ground of wire; Wire is communicated with the two row metalized ground through holes of the ground of T-shaped double-level-metal dielectric-slab reverse side by wire both sides on the ground in T-shaped double-level-metal dielectric-slab front;
Second circuit substrate is rectangular double-layer metal medium plate, and the size of rectangular double-layer metal medium plate is consistent with T-shaped double-level-metal dielectric-slab horizontal segment, and the left and right sides, rectangular double-layer metal medium plate front is etched to the ground of the first circuit substrate wire; Rectangular double-layer metal medium plate reverse side is the ground of the first circuit substrate wire, and the ground in rectangular double-layer metal medium plate front is communicated with two row's metalized ground through holes of the ground of rectangular double-layer metal medium plate reverse side by wire both sides;
Rectangular double-layer metal medium plate front is covered in the front of T-shaped double-level-metal dielectric-slab horizontal segment, first hardware is pressed together on rectangular double-layer metal medium plate reverse side, second hardware is pressed together on T-shaped double-level-metal dielectric-slab horizontal segment reverse side, the flange of connector is arranged on the first hardware and the second hardware, and the inner wire of connector is crimped on wire upper end.
2. the integrated magnetic coupling near field of Ka frequency range substrate as claimed in claim 1 probe, is characterized in that, connector adopts coaxial connector.
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CN201310628600.8A CN104678132A (en) | 2013-11-27 | 2013-11-27 | Ka frequency band base plate integrated magnetic coupling near field probe |
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CN201310628600.8A CN104678132A (en) | 2013-11-27 | 2013-11-27 | Ka frequency band base plate integrated magnetic coupling near field probe |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110470917A (en) * | 2019-07-22 | 2019-11-19 | 西安电子科技大学 | A kind of high temperature resistant electric-field probe applied to high temperature and high speed plasma internal electric field distribution measuring |
CN110568386A (en) * | 2019-07-22 | 2019-12-13 | 西安电子科技大学 | High-temperature-resistant magnetic field probe applied to high-temperature high-speed plasma internal magnetic field distribution measurement |
CN112886169A (en) * | 2021-03-29 | 2021-06-01 | 电子科技大学 | Rectangular waveguide-to-coaxial converter |
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CN1095483A (en) * | 1994-03-15 | 1994-11-23 | 吉林大学 | Microwave probe for coplanar integrated circuit chip |
JP2006194765A (en) * | 2005-01-14 | 2006-07-27 | Molex Inc | High frequency probe device |
CN2869870Y (en) * | 2005-06-22 | 2007-02-14 | 湖南科技大学 | Electric-field probe for electromagnetic compatibility near-field detection |
CN102810704A (en) * | 2012-08-06 | 2012-12-05 | 哈尔滨工业大学 | Full-mode double-ridge substrate integrated waveguide in balanced microstrip line transition |
CN202797223U (en) * | 2011-09-27 | 2013-03-13 | 上海无线电设备研究所 | Stripline and coaxial connector conversion structure |
CN102981028A (en) * | 2012-11-02 | 2013-03-20 | 财团法人台湾电子检验中心 | Near-field electromagnetic probe |
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2013
- 2013-11-27 CN CN201310628600.8A patent/CN104678132A/en active Pending
Patent Citations (6)
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CN1095483A (en) * | 1994-03-15 | 1994-11-23 | 吉林大学 | Microwave probe for coplanar integrated circuit chip |
JP2006194765A (en) * | 2005-01-14 | 2006-07-27 | Molex Inc | High frequency probe device |
CN2869870Y (en) * | 2005-06-22 | 2007-02-14 | 湖南科技大学 | Electric-field probe for electromagnetic compatibility near-field detection |
CN202797223U (en) * | 2011-09-27 | 2013-03-13 | 上海无线电设备研究所 | Stripline and coaxial connector conversion structure |
CN102810704A (en) * | 2012-08-06 | 2012-12-05 | 哈尔滨工业大学 | Full-mode double-ridge substrate integrated waveguide in balanced microstrip line transition |
CN102981028A (en) * | 2012-11-02 | 2013-03-20 | 财团法人台湾电子检验中心 | Near-field electromagnetic probe |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110470917A (en) * | 2019-07-22 | 2019-11-19 | 西安电子科技大学 | A kind of high temperature resistant electric-field probe applied to high temperature and high speed plasma internal electric field distribution measuring |
CN110568386A (en) * | 2019-07-22 | 2019-12-13 | 西安电子科技大学 | High-temperature-resistant magnetic field probe applied to high-temperature high-speed plasma internal magnetic field distribution measurement |
CN110568386B (en) * | 2019-07-22 | 2022-01-25 | 西安电子科技大学 | High-temperature-resistant magnetic field probe for measuring magnetic field distribution in high-temperature high-speed plasma |
CN112886169A (en) * | 2021-03-29 | 2021-06-01 | 电子科技大学 | Rectangular waveguide-to-coaxial converter |
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Application publication date: 20150603 |