CN104671773B - A kind of low dielectric constant microwave dielectric ceramic material and preparation method thereof - Google Patents
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- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 40
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- 239000000843 powder Substances 0.000 claims description 20
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
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- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
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Abstract
本发明公开了一种低介电常数微波介质陶瓷材料及其制备方法,该陶瓷材料的物相包括Li2Mg3SnO6和Mg2SnO4,其中Li2Mg3SnO6的含量为42wt%~95wt%,其余为Mg2SnO4;该陶瓷材料的介电常数为7.8~8.8,介电损耗为0.00007~0.00019,Q×f为72000~123000GHz,谐振频率温度系数为‑40~‑31ppm/℃,采用高温固相反应法制备而成。本发明微波介质陶瓷材料制备方法简单,所用原料丰富、成本低廉,有利于工业化生产,所制得的微波介质陶瓷性能稳定,可作为电子线路基板、介质谐振器、滤波器、高频卫星微波器件基板与微带线的制造材料使用,在电子线路、微波移动通信、卫星通信、雷达系统领域上具有重要应用前景及经济价值。The invention discloses a low dielectric constant microwave dielectric ceramic material and a preparation method thereof. The phase of the ceramic material includes Li 2 Mg 3 SnO 6 and Mg 2 SnO 4 , wherein the content of Li 2 Mg 3 SnO 6 is 42 wt%. ~95wt%, the rest is Mg 2 SnO 4 ; the dielectric constant of the ceramic material is 7.8~8.8, the dielectric loss is 0.00007~0.00019, Q×f is 72000~123000GHz, and the resonant frequency temperature coefficient is ‑40~‑31ppm/ ℃, prepared by high-temperature solid-state reaction method. The preparation method of the microwave dielectric ceramic material of the present invention is simple, the raw materials used are abundant, the cost is low, and it is beneficial to industrial production. The performance of the prepared microwave dielectric ceramic is stable, and it can be used as an electronic circuit substrate, a dielectric resonator, a filter, and a high-frequency satellite microwave device. The use of manufacturing materials for substrates and microstrip lines has important application prospects and economic value in the fields of electronic circuits, microwave mobile communications, satellite communications, and radar systems.
Description
技术领域technical field
本发明属于电子信息材料及其器件技术领域,具体涉及一种低介电常数微波介质陶瓷材料及其制备方法。The invention belongs to the technical field of electronic information materials and devices thereof, and in particular relates to a low dielectric constant microwave dielectric ceramic material and a preparation method thereof.
背景技术Background technique
微波介质陶瓷是指应用于微波频段(300MHz~300GHz)电路中作为介质材料完成一种或多种功能的陶瓷材料。理想微波介质陶瓷具有合适的介电常数(εr)、高品质因数(Q×f)和趋于零的谐振频率温度系数(τf)。用微波介质陶瓷制作的谐振器、滤波器、微波集成电路基片等元器件,在移动通信、无线局域网、军事通信等现代通信技术中得到了广泛应用。此外,随着通信设备运行频率的不断提高,系统损耗和发热量随之增大,系统稳定性逐渐变差。为克服频率拓宽带来的众多问题,亟需开发高Q值和低、中εr(10≤εr≤25)以及近零τf值的微波介质材料。低εr能减小材料与电极之间的交互耦合损耗,并提高信号传输速率,低介电损耗有利于提高器件工作频率的可选择性,近零τf有助于提高器件的频率温度稳定特性。Microwave dielectric ceramics refer to ceramic materials used in microwave frequency (300MHz-300GHz) circuits as dielectric materials to complete one or more functions. Ideal microwave dielectric ceramics have suitable dielectric constant (ε r ), high quality factor (Q×f) and resonant frequency temperature coefficient (τ f ) tending to zero. Components such as resonators, filters, and microwave integrated circuit substrates made of microwave dielectric ceramics have been widely used in modern communication technologies such as mobile communications, wireless local area networks, and military communications. In addition, as the operating frequency of communication equipment continues to increase, system loss and heat generation increase, and system stability gradually deteriorates. In order to overcome many problems caused by frequency broadening, it is urgent to develop microwave dielectric materials with high Q value and low, medium ε r (10≤ε r ≤25) and near zero τ f value. Low ε r can reduce the interaction coupling loss between the material and the electrode, and increase the signal transmission rate. Low dielectric loss is conducive to improving the selectivity of the operating frequency of the device. Near zero τ f helps to improve the frequency and temperature stability of the device. characteristic.
传统的低εr陶瓷主要是由玻璃-陶瓷(微晶玻璃)、玻璃+陶瓷(多相陶瓷)等组成。玻璃陶瓷材料虽然能在较低温度下烧结,但由于大量低熔点玻璃物质的引入,增加了材料的介质损耗,很难在高频下使用。为适应电子元器件向高频、高速方向发展的需要,新型低介电常数(εr<15)、高Q值微波介质陶瓷材料越来越受到国内外材料学者的重视。近年来报道的典型低εr、高Q值材料体系主要包括:M2SiO4(M=Mg、Zn)基、Al2O3基、A4M2O9(A=Co、Mg;B=Nb、Ta)和尖晶石结构M2SnO4(M=Cu、Zn、Ni等)基微波介质陶瓷。Traditional low εr ceramics are mainly composed of glass-ceramics (glass-ceramics), glass+ceramics (multiphase ceramics), etc. Although glass-ceramic materials can be sintered at relatively low temperatures, due to the introduction of a large amount of low-melting glass substances, the dielectric loss of the material is increased, and it is difficult to use at high frequencies. In order to meet the needs of high-frequency and high-speed development of electronic components, new low dielectric constant (ε r <15), high-Q microwave dielectric ceramic materials have attracted more and more attention from domestic and foreign materials scholars. Typical low ε r and high Q value material systems reported in recent years mainly include: M 2 SiO 4 (M=Mg, Zn)-based, Al 2 O 3 -based, A 4 M 2 O 9 (A=Co, Mg; B =Nb, Ta) and spinel structure M 2 SnO 4 (M=Cu, Zn, Ni, etc.) based microwave dielectric ceramics.
发明内容Contents of the invention
本发明所要解决的技术问题是提供一种新型的具有低介电常数和优异微波介电性能的微波介质陶瓷材料及其制备方法。The technical problem to be solved by the present invention is to provide a novel microwave dielectric ceramic material with low dielectric constant and excellent microwave dielectric properties and its preparation method.
解决上述技术问题所采用的技术方案是:该低介电常数微波介质陶瓷材料的物相包括Li2Mg3SnO6和Mg2SnO4,其中Li2Mg3SnO6的含量为42wt%~95wt%,其余为Mg2SnO4;该陶瓷材料的介电常数为7.8~8.8,介电损耗为0.00007~0.00019,Q×f为72000~123000GHz,谐振频率温度系数为-40~-31ppm/℃。The technical solution adopted to solve the above technical problems is: the phase of the low dielectric constant microwave dielectric ceramic material includes Li 2 Mg 3 SnO 6 and Mg 2 SnO 4 , wherein the content of Li 2 Mg 3 SnO 6 is 42wt%-95wt% %, the rest is Mg 2 SnO 4 ; the dielectric constant of the ceramic material is 7.8-8.8, the dielectric loss is 0.00007-0.00019, Q×f is 72000-123000 GHz, and the temperature coefficient of resonance frequency is -40-31ppm/℃.
上述陶瓷材料中Li2Mg3SnO6的含量最佳为52wt%,其余为Mg2SnO4,其介电常数为7.8,介电损耗为0.00007,Q×f为123000GHz,谐振频率温度系数为-32ppm/℃。The optimal content of Li 2 Mg 3 SnO 6 in the above ceramic material is 52wt%, the rest is Mg 2 SnO 4 , its dielectric constant is 7.8, dielectric loss is 0.00007, Q×f is 123000GHz, and the temperature coefficient of resonance frequency is - 32ppm/°C.
上述的低介电常数微波介质陶瓷材料的制备方法由下述步骤组成:The preparation method of the above-mentioned low dielectric constant microwave dielectric ceramic material consists of the following steps:
1、混料1. Mixing
将纯度大于99.9%的Li2CO3粉、MgO粉、SnO2粉按摩尔比为1:3:1混合后加入球磨罐中,以氧化锆球为磨球、无水乙醇为研磨介质,充分混合球磨6~10小时,80~100℃干燥。Mix Li 2 CO 3 powder, MgO powder, and SnO 2 powder with a purity greater than 99.9% in a molar ratio of 1:3:1, and then add them to a ball mill jar, use zirconia balls as the grinding balls, and absolute ethanol as the grinding medium. Mix and ball mill for 6-10 hours, and dry at 80-100°C.
2、预烧2. Pre-burning
将步骤1干燥后的混合物在1000~1200℃预烧4~6小时,得到预烧粉。Pre-calcining the dried mixture in step 1 at 1000-1200° C. for 4-6 hours to obtain calcined powder.
3、二次混料3. Secondary mixing
将预烧粉加入球磨罐中,以氧化锆球为磨球、无水乙醇为研磨介质,充分混合球磨6~10小时,80~100℃干燥。Put the calcined powder into a ball mill jar, use zirconia balls as the grinding balls and absolute ethanol as the grinding medium, mix thoroughly and ball mill for 6-10 hours, and dry at 80-100°C.
4、造粒、成型4. Granulation and molding
向步骤3干燥后的预烧粉中加入质量分数为5%的聚乙烯醇水溶液造粒,过80~160目筛,再用粉末压片机压制成圆柱形生坯。Add polyvinyl alcohol aqueous solution with a mass fraction of 5% to the calcined powder dried in step 3 to granulate, pass through a sieve of 80-160 mesh, and then press into a cylindrical green body with a powder tablet press.
5、烧结5. Sintering
将步骤4得到的圆柱形生坯在1320~1400℃烧结2~10小时,得到低介电常数微波介质陶瓷材料。The cylindrical green body obtained in step 4 is sintered at 1320-1400° C. for 2-10 hours to obtain a low dielectric constant microwave dielectric ceramic material.
上述步骤2中,优选将步骤1干燥后的混合物在1000℃预烧4小时。In the above step 2, the dried mixture in step 1 is preferably pre-calcined at 1000° C. for 4 hours.
上述步骤5中,将步骤4得到的圆柱形生坯在1360℃烧结6小时。In step 5 above, the cylindrical green body obtained in step 4 was sintered at 1360° C. for 6 hours.
本发明微波介质陶瓷材料制备方法简单,所用原料丰富、成本低廉,有利于工业化生产,所制得的微波介质陶瓷具有低介电常数和优异微波介电性能,可作为电子线路基板、介质谐振器、滤波器、高频卫星微波器件基板与微带线的制造材料使用,在电子线路、微波移动通信、卫星通信、雷达系统领域上具有重要应用前景及经济价值。The preparation method of the microwave dielectric ceramic material of the present invention is simple, the raw materials used are abundant, the cost is low, and it is beneficial to industrial production. The prepared microwave dielectric ceramic has low dielectric constant and excellent microwave dielectric performance, and can be used as an electronic circuit substrate and a dielectric resonator. , filters, high-frequency satellite microwave device substrates and microstrip line manufacturing materials have important application prospects and economic value in the fields of electronic circuits, microwave mobile communications, satellite communications, and radar systems.
附图说明Description of drawings
图1是实施例1~7制备的低介电常数微波介质陶瓷材料的X射线衍射图。Fig. 1 is the X-ray diffraction pattern of the low dielectric constant microwave dielectric ceramic material prepared in Examples 1-7.
具体实施方式detailed description
下面结合附图和实施例对本发明进一步详细说明,但本发明的保护范围不仅限于这些实施例。The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments, but the protection scope of the present invention is not limited to these embodiments.
实施例1Example 1
1、混料1. Mixing
取纯度大于99.9%的Li2CO3粉2.500g(0.033mol)、MgO粉4.012g(0.099mol)、SnO2粉5.023g(0.033mol)混合均匀,将原料混合物与氧化锆球、无水乙醇按质量比为1∶2∶2装入球磨罐中,360转/分钟充分混合球磨8小时,80~100℃干燥12小时。Take 2.500g (0.033mol) of Li2CO3 powder, 4.012g (0.099mol) of MgO powder and 5.023g ( 0.033mol ) of SnO2 powder with a purity greater than 99.9%, and mix them evenly, and mix the raw material mixture with zirconia balls, absolute ethanol Put it into a ball mill tank at a mass ratio of 1:2:2, thoroughly mix and ball mill at 360 rpm for 8 hours, and dry at 80-100°C for 12 hours.
2、预烧2. Pre-burning
将步骤1干燥后的混合物置于氧化铝坩埚内,以2℃/分钟的升温速率升温至1000℃,恒温预烧4小时,得到预烧粉。Put the dried mixture in step 1 into an alumina crucible, raise the temperature to 1000°C at a heating rate of 2°C/min, and pre-fire at a constant temperature for 4 hours to obtain calcined powder.
3、二次混料3. Secondary mixing
将预烧粉与氧化锆球、无水乙醇按质量比为1∶2∶2装入球磨罐中,充分混合球磨8小时,80~100℃干燥12小时。Put calcined powder, zirconia balls, and absolute ethanol in a mass ratio of 1:2:2 into a ball mill jar, mix thoroughly and ball mill for 8 hours, and dry at 80-100°C for 12 hours.
4、造粒、成型4. Granulation and molding
向步骤3干燥后的预烧粉中加入其质量5%的质量分数为5%的聚乙烯醇水溶液造粒,过120目筛,再用粉末压片机在4MPa压强下将其压制成直径为11.5mm、厚度为5.5mm的圆柱形生坯。Add its mass fraction to the calcined powder after step 3 drying and be 5% polyvinyl alcohol aqueous solution to granulate, cross 120 mesh sieves, and then use a powder tablet press to compress it into a diameter of 11.5mm cylindrical green body with a thickness of 5.5mm.
5、烧结5. Sintering
将步骤4得到的圆柱形生坯在1360℃烧结6小时,得到低介电常数微波介质陶瓷材料。The cylindrical green body obtained in step 4 was sintered at 1360° C. for 6 hours to obtain a low dielectric constant microwave dielectric ceramic material.
实施例2Example 2
在实施例1的步骤5中,将圆柱形生坯在1340℃烧结6小时,其他步骤与实施例1相同,得到低介电常数微波介质陶瓷材料。In step 5 of embodiment 1, the cylindrical green body was sintered at 1340° C. for 6 hours, and other steps were the same as in embodiment 1 to obtain a low dielectric constant microwave dielectric ceramic material.
实施例3Example 3
在实施例1的步骤5中,将圆柱形生坯在1320℃烧结6小时,其他步骤与实施例1相同,得到低介电常数微波介质陶瓷材料。In step 5 of embodiment 1, the cylindrical green body was sintered at 1320° C. for 6 hours, and other steps were the same as in embodiment 1 to obtain a low dielectric constant microwave dielectric ceramic material.
实施例4Example 4
在实施例1的步骤5中,将圆柱形生坯在1380℃烧结6小时,其他步骤与实施例1相同,得到低介电常数微波介质陶瓷材料。In Step 5 of Example 1, the cylindrical green body was sintered at 1380° C. for 6 hours, and other steps were the same as in Example 1 to obtain a low dielectric constant microwave dielectric ceramic material.
实施例5Example 5
在实施例1的步骤5中,将圆柱形生坯在1400℃烧结6小时,其他步骤与实施例1相同,得到低介电常数微波介质陶瓷材料。In Step 5 of Example 1, the cylindrical green body was sintered at 1400° C. for 6 hours, and other steps were the same as in Example 1 to obtain a low dielectric constant microwave dielectric ceramic material.
实施例6Example 6
在实施例1的步骤5中,将圆柱形生坯在1360℃烧结2小时,其他步骤与实施例1相同,得到低介电常数微波介质陶瓷材料。In Step 5 of Example 1, the cylindrical green body was sintered at 1360° C. for 2 hours, and other steps were the same as in Example 1 to obtain a low dielectric constant microwave dielectric ceramic material.
实施例7Example 7
在实施例1的步骤5中,将圆柱形生坯在1360℃烧结10小时,其他步骤与实施例1相同,得到低介电常数微波介质陶瓷材料。In Step 5 of Example 1, the cylindrical green body was sintered at 1360° C. for 10 hours, and other steps were the same as in Example 1 to obtain a low dielectric constant microwave dielectric ceramic material.
发明人将实施例1~7制备的低介电常数微波介质陶瓷材料采用RagukuD/Max2550型(Japan)X射线衍射仪进行表征,结果见图1。由图1可见,所制备的低介电常数微波介质陶瓷材料的物相组成为Li2Mg3SnO6和Mg2SnO4,各物相的质量百分含量见表1。The inventors characterized the low dielectric constant microwave dielectric ceramic materials prepared in Examples 1-7 using a Raguku D/Max2550 (Japan) X-ray diffractometer, and the results are shown in FIG. 1 . It can be seen from Figure 1 that the phase composition of the prepared low dielectric constant microwave dielectric ceramic material is Li 2 Mg 3 SnO 6 and Mg 2 SnO 4 , and the mass percentage of each phase is shown in Table 1.
表1本发明微波介质陶瓷材料的物相组成The phase composition of table 1 microwave dielectric ceramic material of the present invention
发明人将实施例1~7制备的陶瓷材料研磨抛光后加工成直径为9~10mm、高5mm的圆柱,用矢量网络分析仪、闭腔谐振法配合高低温温箱测试陶瓷微波介电性能。结果见表2。The inventor ground and polished the ceramic materials prepared in Examples 1-7 and processed them into cylinders with a diameter of 9-10 mm and a height of 5 mm, and tested the microwave dielectric properties of the ceramics with a vector network analyzer, closed-cavity resonance method and high-low temperature oven. The results are shown in Table 2.
表2本发明微波介质陶瓷材料的介电性能和烧结特性Table 2 Dielectric properties and sintering properties of microwave dielectric ceramic material of the present invention
由表2可见,实施例1~7制备的微波介质陶瓷材料具有低介电常数、超低损耗及高Q×f值,谐振频率温度系数在-40~-31ppm/℃之间,其烧结温度范围宽(1320~1400℃)且性能稳定,是一种新型的具有低介电常数和优异的微波介电性能的微波介质陶瓷材料。It can be seen from Table 2 that the microwave dielectric ceramic materials prepared in Examples 1-7 have low dielectric constant, ultra-low loss and high Q×f value, the temperature coefficient of resonance frequency is between -40~-31ppm/℃, and the sintering temperature Wide range (1320~1400℃) and stable performance, it is a new type of microwave dielectric ceramic material with low dielectric constant and excellent microwave dielectric properties.
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CN106187158A (en) * | 2016-07-19 | 2016-12-07 | 桂林理工大学 | Temperature stable ultra-low dielectric constant microwave dielectric ceramic Li2MgSnO4 with high quality factor |
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