CN104671191A - Micro-nano structure and manufacture method thereof - Google Patents
Micro-nano structure and manufacture method thereof Download PDFInfo
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- CN104671191A CN104671191A CN201310624732.3A CN201310624732A CN104671191A CN 104671191 A CN104671191 A CN 104671191A CN 201310624732 A CN201310624732 A CN 201310624732A CN 104671191 A CN104671191 A CN 104671191A
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Abstract
The invention provides a manufacture method of a micro-nano structure. The method comprises the steps of sequentially superposing N layers of negative glue structure on the upper surface of a substrate, wherein the N layer of negative glue structure is formed on the upper surface of the (N-1) layer of negative glue structure; exposing positions at which reinforcing pins are arranged in advance in the N layers of negative glue structure one time, and forming reinforcing pins in the N layers of negative glue structure; and developing all layers of negative glue structure, wherein N is an integer greater than or equal to 2. The micro-nano structure manufactured by the method has good stability and reliability. The invention also provides the micro-nano structure.
Description
Technical field
The invention belongs to nanometer technique field, relate to a kind of minute mechanical and electrical system and preparation method thereof.
Background technology
Minute mechanical and electrical system (Micro/Nano Electro Mechanical Systems, be called for short MEMS/NEMS) comprise the micron order, the even nano level micro-nano system architecture that are formed by micro-nano technology techniques such as sputtering, photoetching, microplatings, it has the plurality of advantages such as microminiaturization, intellectuality, integrated, compatible high and cost are low, is widely used in the fields such as electronic chip, sensor, bioelectronics and intelligent equipment.
At micro-nano system manufacture view, along with people are to negative adhesive process, the further investigation that particularly can be retained in the negative adhesive process in micro-nano system as part system structure, making multiple layer combination bear plastic structure progressively becomes very important a kind of structure in micro-nano system.
But this multiple layer combination is born plastic structure and be there is the poor problem of bond strength, when making micro-nano system, the thickness bearing every layer of negative glue in plastic structure due to multiple layer combination is not identical, or, even if the thickness of every layer of negative glue is identical, negative also inevitably exist gap between glue-line and negative glue-line, and the drying time of every layer of negative glue-line exists bigger difference, these all can cause the bond strength between negative glue-line and negative glue-line to decline, thus make steadiness and the reliability decrease of whole micro-nano system.
Multiple layer combination is born plastic structure and is adopted multiexposure, multiple exposure, the method of once developing is formed, very complicated structure can be made, there is high-aspect-ratio simultaneously, device architecture easily discharges, processing compatibility is high advantage, it has been widely applied in the fields such as microfluidic device, micro sensing device, passive device.
Summary of the invention
The technical problem to be solved in the present invention is exactly the above-mentioned defect for existing in minute mechanical and electrical system, provides a kind of micro-nano structure and preparation method thereof, and negative bond strength between glue-line and negative glue-line is higher, and the steadiness of micro-nano structure and reliability can be made to improve.
For this reason, the invention provides a kind of preparation method of micro-nano structure, comprise the following steps:
Substrate is provided;
The first negative glue-line is formed at the upper surface of described substrate;
Expose described first negative glue-line, to form the first negative structural adhesive layer on the surface of described substrate, and the position of presetting reinforcing pin in described first negative structural adhesive layer forms unexposed reinforcing pin pattern;
The second negative glue-line is formed at the upper surface of described first negative structural adhesive layer;
Expose described second negative glue-line, to form the second negative structural adhesive layer at the upper surface of described first negative structural adhesive layer, and make the position of presetting reinforcing pin in described second negative structural adhesive layer form unexposed reinforcing pin pattern;
Obtain stacked N layer successively at the upper surface of substrate in this way and bear structural adhesive layer, N bears structural adhesive layer and is formed at the upper surface that N-1 bears structural adhesive layer;
The position of presetting reinforcing pin is born in structural adhesive layer to described N layer and carries out disposable exposure, bear in structural adhesive layer to be formed at described N layer and reinforce pin;
Development treatment is carried out, to form required micro-nano structure to the described negative structural adhesive layer of all each layers;
Wherein, N be more than or equal to 2 integer.
Wherein, N bears unexposed reinforcing pin pattern dimension in structural adhesive layer and is greater than to obtain and equals N-1 and bear unexposed reinforcing pin pattern dimension in structural adhesive layer
Wherein, described substrate is silicon substrate, glass substrate or ceramic substrate.
Wherein, the thickness of every layer of described negative structural adhesive layer is 50 nanometer-500 microns.
Wherein, the thickness of every layer of described negative structural adhesive layer is 1 micron-500 microns.
Wherein, the described N layer thickness of bearing structural adhesive layer is identical.
Wherein, described N layer bears the thickness difference of structural adhesive layer.
Wherein, described reinforcing pin is loop configuration or column construction.
Wherein, the cross sectional shape of described loop configuration is polygonal annular, annular, oval ring; The cross sectional shape of described column construction is polygon, circle or oval.
The present invention also provides a kind of micro-nano structure, comprise substrate and bear structural adhesive layer with the multilayer being stacked in described substrate top surface, bear between structural adhesive layer in described multilayer and be provided with reinforcing pin, in order to reinforce the adhesion between described negative structural adhesive layer, described micro-nano structure is obtained by the preparation method of described micro-nano structure provided by the invention.
The present invention has following beneficial effect:
The preparation method of micro-nano structure provided by the invention once forms stacked N layer at the upper surface of substrate to bear structural adhesive layer, and in every layer of negative structural adhesive layer, form unexposed reinforcing pin pattern, obtained by exposure after all negative structural adhesive layers complete and reinforce pin, finally carry out development treatment, namely obtained by multiexposure, multiple exposure, once development and there is the micro-nano structure that multiple layer combination bears structural adhesive layer.This micro-nano structure can improve bond strength between layers by reinforcing pin, thus improves steadiness and the reliability of whole micro-nano structure.
Micro-nano structure provided by the invention is provided with the reinforcing pin running through all negative structural adhesive layer thickness between negative structural adhesive layer, can improve the bond strength between negative structural adhesive layer by this reinforcing pin, thus improves steadiness and the reliability of whole micro-nano structure.
Accompanying drawing explanation
The flow chart of the preparation method of the micro-nano structure that Fig. 1 provides for the present embodiment;
Fig. 2 a is the sectional view of the embodiment of the present invention after substrate surface arranges the first negative glue-line;
Fig. 2 b is the sectional view of the embodiment of the present invention after substrate surface forms the first negative structural adhesive layer;
Fig. 2 c is the sectional view of the embodiment of the present invention after the first negative structural adhesive layer surface arranges the second negative glue-line;
Fig. 2 d is the sectional view of the embodiment of the present invention after the first negative structural adhesive layer surface forms the second negative structural adhesive layer;
Fig. 2 e is the sectional view of the embodiment of the present invention after the second negative structural adhesive layer surface arranges the 3rd negative glue-line;
Fig. 2 f is the sectional view of the embodiment of the present invention after the second negative structural adhesive layer surface forms the 3rd negative structural adhesive layer;
Fig. 2 g is that embodiment of the present invention exposure forms the sectional view after reinforcing pin;
Fig. 2 h is the schematic cross-section of embodiment of the present invention micro-nano structure;
Fig. 3 is the schematic cross-section of the part-structure of embodiment of the present invention micro-nano structure.
Detailed description of the invention
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, micro-nano structure provided by the invention and preparation method thereof, minute mechanical and electrical system are described in detail.
As shown in Figure 1, the preparation method of micro-nano structure comprises:
Step S1, provides substrate.
Substrate can be silicon substrate, glass substrate or ceramic substrate.
Step S2, forms the first negative glue-line at the upper surface of substrate.
Coating or alternate manner is utilized to form the first negative glue-line 100 at the upper surface of substrate S, as shown in Figure 2 a.The thickness of the first negative glue-line 100 can set arbitrarily according to actual conditions, and the thickness of the negative glue-line 100 of the present embodiment first selects 50 nanometer-500 microns, and from manufacture craft cost, preferably 1 micron-500 microns.
It should be noted that, the present embodiment mentions that the upper surface of substrate S is a relative concept, and the face being positioned at upside is in fig. 2 a upper surface.In fact, the upper surface of substrate S can be considered to the machined surface of substrate S.In like manner, the upper surface hereinafter mentioned also is a relative concept.
Step S3, exposes described first negative glue-line, forms the first negative structural adhesive layer at the upper surface of substrate, and the position of presetting reinforcing pin in the first negative structural adhesive layer forms unexposed reinforcing pin pattern.
Mask plate M1 is utilized to block the first negative glue-line 100, then the negative glue-line 100 of UV-irradiation first is used, the first negative structural adhesive layer 100 ' is formed at the upper surface of substrate S, wherein, partially cured by UV-irradiation, do not comprised the pattern preset and reinforce pin by the part of UV-irradiation, in the first negative structural adhesive layer 100 ', namely preset the position reinforcing pin form unexposed reinforcing pin pattern 101, as shown in Figure 2 b.
Step S4, forms the second negative glue-line at the upper surface of the first negative structural adhesive layer.
The second negative glue-line 200 is obtained by coating or alternate manner, as shown in Figure 2 c at the upper surface of the first negative structural adhesive layer 100 '.The thickness of the second negative glue-line 200 can set arbitrarily according to actual conditions.The thickness of the negative glue-line 200 of the present embodiment second selects 50 nanometer-500 microns, and from manufacture craft cost, preferably 1 micron-500 microns.
Step S5, exposure the second negative glue-line, to form the second negative structural adhesive layer at the upper surface of the first negative structural adhesive layer, and makes the position of presetting reinforcing pin in the second negative structural adhesive layer form unexposed reinforcing pin pattern.
Mask plate M2 is utilized to block the second negative glue-line 200, then the negative glue-line 200 of UV-irradiation second is used, the second negative structural adhesive layer 200 ' is formed at the upper surface of the first negative structural adhesive layer 100 ', wherein, partially cured by UV-irradiation, the pattern preset and reinforce pin is not comprised by the part of UV-irradiation, namely in the second negative structural adhesive layer 200 ', preset the position reinforcing pin form unexposed reinforcing pin pattern 201, and, the reinforcing pin pattern 101 being arranged in the first negative structural adhesive layer 100 ' is relative with the position of the reinforcing pin pattern 201 being arranged in the second negative structural adhesive layer 200 ', be connected in the vertical direction with unexposed reinforcing pin pattern 201 in the second negative glue-line 200 to make unexposed reinforcing pin pattern 101 in the first negative glue-line 100, as shown in Figure 2 d.
Step S6, forms the 3rd negative glue-line at the upper surface of the second negative structural adhesive layer.
The 3rd negative glue-line 300 is obtained by coating or alternate manner, as shown in Figure 2 e at the upper surface of the second negative structural adhesive layer 200 '.The thickness of the 3rd negative glue-line 300 can set arbitrarily according to actual conditions, and the thickness of the negative glue-line 300 of the present embodiment the 3rd selects 50 nanometer-500 microns, and from manufacture craft cost, preferably 1 micron-500 microns.
Step S7, exposure the 3rd negative glue-line, forms the 3rd negative structural adhesive layer with the upper surface at the second negative structural adhesive layer, and makes the position of presetting reinforcing pin in the 3rd negative structural adhesive layer form unexposed reinforcing pin pattern.
Mask plate M3 is utilized to block the 3rd negative glue-line 300, then the negative glue-line 300 of UV-irradiation the 3rd is used, the 3rd negative structural adhesive layer 300 ' is formed at the upper surface of the second negative structural adhesive layer 200 ', wherein, partially cured by UV-irradiation, the pattern preset and reinforce pin is not comprised by the part of UV-irradiation, namely in the 3rd negative structural adhesive layer 300 ', preset the position reinforcing pin form unexposed reinforcing pin pattern 301, and, the reinforcing pin pattern 201 being arranged in the second negative structural adhesive layer 200 ' is relative with the position of the reinforcing pin pattern 301 being arranged in the 3rd negative structural adhesive layer 300 ', be connected in the vertical direction with unexposed reinforcing pin pattern 301 in the 3rd negative glue-line 300 to make unexposed reinforcing pin pattern 201 in the second negative glue-line 200, as shown in figure 2f.
Step S8, carrying out disposable exposure to presetting the position reinforcing pin in three layers of negative structural adhesive layer, being formed and reinforcing pin in three layers of negative structural adhesive layer.
Three layers of stacked negative structural adhesive layer are obtained at the upper surface of substrate S, i.e. the first negative structural adhesive layer 100 ', the second negative structural adhesive layer 200 ' and the 3rd negative structural adhesive layer 300 ' by step S2-S7.Mask plate M4 is utilized to block the 3rd negative glue-line 300, then the negative glue-line 300 of UV-irradiation the 3rd is used, mask plate M4 only allows to expose the pattern reinforcing pin, after exposure, form the reinforcing pin M0 running through the first negative structural adhesive layer 100 ', the second negative structural adhesive layer 200 ' and the 3rd negative structural adhesive layer 300 ' thickness.Because light is more more weak toward its intensity of bottom, there is T-TOP effect, therefore, preferably the first negative structural adhesive layer 100 ' unexposed reinforcing pin pattern dimension is less than the second negative structural adhesive layer 200 ' unexposed reinforcing pin pattern dimension, second negative structural adhesive layer 200 ' unexposed reinforcing pin pattern dimension is less than the 3rd negative structural adhesive layer 300 ' unexposed reinforcing pin pattern dimension, be conducive to reinforcing pin pattern to expose to the sun like this, obtain and intactly reinforce pin M0, as shown in Figure 2 g.
Step S9, bears structural adhesive layer to all each layers and carries out development treatment, the micro-nano structure needed for acquisition.
Carry out development treatment with developer solution, make the first negative structural adhesive layer 100 ', the second negative structural adhesive layer 200 ' and the 3rd negative structural adhesive layer 300 ' form pattern (as microchannel) required separately, as shown in fig. 2h.The preparation method of the present embodiment micro-nano structure is by multiexposure, multiple exposure, and the mode of once developing obtains micro-nano structure, thus in negative structural adhesive layer, obtain the reinforcing pin running through its thickness.
It should be noted that, above-described embodiment micro-nano structure is provided with three layers of negative structural adhesive layer, but the present invention is not limited thereto.In fact, micro-nano structure can comprise two-layer, three layers, four layers, even more multi-layered negative structural adhesive layer.That is, micro-nano structure can comprise N layer and bear structural adhesive layer, and N layer bears the surface that structural adhesive layer is stacked and placed on substrate S successively, and N bears structural adhesive layer and is formed at the upper surface that N-1 bears structural adhesive layer.And preferably N bears unexposed reinforcing pin pattern dimension in structural adhesive layer and is more than or equal to N-1 and bears unexposed reinforcing pin pattern dimension in structural adhesive layer.Wherein, N be more than or equal to 2 integer.
Also it should be noted that, the thickness of every layer of negative structural adhesive layer according to actual needs can be identical, also can be different.Pin reinforced by negative glue is loop configuration or column construction, and the cross sectional shape of loop configuration is polygonal annular, annular or oval ring.The cross sectional shape of column construction is polygon, circle or oval.And the negative glue of loop configuration is reinforced pin and is conducive to strengthening the bond strength that multilayer bears structural adhesive layer, can improve steadiness and the reliability of micro-nano structure.
The preparation method of the micro-nano structure that the present embodiment provides once forms stacked N layer at the upper surface of substrate to bear structural adhesive layer, and in every layer of negative structural adhesive layer, form unexposed reinforcing pin pattern, obtained by exposure after all negative structural adhesive layers complete and reinforce pin, finally carry out development treatment, namely obtained by multiexposure, multiple exposure, once development and there is the micro-nano structure that multiple layer combination bears structural adhesive layer.This micro-nano structure can improve bond strength between layers by reinforcing pin, thus improves steadiness and the reliability of whole micro-nano structure.
The present embodiment also provides a kind of micro-nano structure, as shown in Figure 3, micro-nano structure comprises substrate S and three layers of negative structural adhesive layer C1, C2, C3, bear structural adhesive layer C1, C2, C3 at layer and be provided with the multiple reinforcing pin M0 running through its thickness, in order to improve negative bond strength between structural adhesive layer C1, C2, C3, thus improve steadiness and the reliability of whole micro-nano structure.In fig. 3, illustrate only the microchannel 302 in the second negative structural adhesive layer C2.In fact, in other negative structural adhesive layer, also can microchannel be set.Certainly, other micro-structural except microchannel can also be set in negative structural adhesive layer.
The micro-nano structure that the present embodiment provides is provided with the reinforcing pin running through all negative structural adhesive layer thickness between negative structural adhesive layer, the bond strength between negative structural adhesive layer can be improved by this reinforcing pin, thus improve steadiness and the reliability of whole micro-nano structure.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a preparation method for micro-nano structure, is characterized in that, comprises the following steps:
Substrate is provided;
The first negative glue-line is formed at the upper surface of described substrate;
Expose described first negative glue-line, to form the first negative structural adhesive layer on the surface of described substrate, and the position of presetting reinforcing pin in described first negative structural adhesive layer forms unexposed reinforcing pin pattern;
The second negative glue-line is formed at the upper surface of described first negative structural adhesive layer;
Expose described second negative glue-line, to form the second negative structural adhesive layer at the upper surface of described first negative structural adhesive layer, and make the position of presetting reinforcing pin in described second negative structural adhesive layer form unexposed reinforcing pin pattern;
Obtain stacked N layer successively at the upper surface of substrate in this way and bear structural adhesive layer, N bears structural adhesive layer and is formed at the upper surface that N-1 bears structural adhesive layer;
The position of presetting reinforcing pin is born in structural adhesive layer to described N layer and carries out disposable exposure, bear in structural adhesive layer to be formed at described N layer and reinforce pin;
Development treatment is carried out to the described negative structural adhesive layer of all each layers;
Wherein, N be more than or equal to 2 integer.
2. the preparation method of micro-nano structure according to claim 1, is characterized in that, N bears unexposed reinforcing pin pattern dimension in structural adhesive layer and is greater than to obtain and equals N-1 and bear unexposed reinforcing pin pattern dimension in structural adhesive layer.
3. the preparation method of micro-nano structure according to claim 1, is characterized in that, described substrate is silicon substrate, glass substrate or ceramic substrate.
4. the preparation method of micro-nano structure according to claim 1, is characterized in that, the thickness of every layer of described negative structural adhesive layer is 50 nanometer-500 microns.
5. the preparation method of micro-nano structure according to claim 4, is characterized in that, the thickness of every layer of described negative structural adhesive layer is 1 micron-500 microns.
6. the preparation method of micro-nano structure according to claim 1, is characterized in that, the thickness that described N layer bears structural adhesive layer is identical.
7. the preparation method of micro-nano structure according to claim 6, is characterized in that, the thickness that described N layer bears structural adhesive layer is different.
8. the preparation method of micro-nano structure according to claim 1, is characterized in that, described reinforcing pin is loop configuration or column construction.
9. the preparation method of micro-nano structure according to claim 8, is characterized in that, the cross sectional shape of described loop configuration is polygonal annular, annular, oval ring; The cross sectional shape of described column construction is polygon, circle or oval.
10. a micro-nano structure, comprise substrate and bear structural adhesive layer with the multilayer being stacked in described substrate top surface, it is characterized in that, bear between structural adhesive layer in described multilayer and be provided with reinforcing pin, in order to reinforce the adhesion between described negative structural adhesive layer, described micro-nano structure is obtained by the preparation method of the micro-nano structure described in claim 1-9 any one.
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Cited By (1)
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| CN106142292A (en) * | 2016-06-29 | 2016-11-23 | 电子科技大学 | A kind of preparation method of the ultra-thin green band being applied to common burning porcelain technology |
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| US20100003623A1 (en) * | 2008-07-03 | 2010-01-07 | United Microelectronics Corp. | Method of patterning multiple photosensitive layers |
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| US20110204523A1 (en) * | 2010-02-19 | 2011-08-25 | International Business Machines Corporation | Method of fabricating dual damascene structures using a multilevel multiple exposure patterning scheme |
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| CN1988130A (en) * | 2005-12-24 | 2007-06-27 | 国际商业机器公司 | Method for fabricating dual damascene structures |
| CN101038440A (en) * | 2006-03-15 | 2007-09-19 | 岛尼尔公司 | Process for fabricating a monolayer or multilayer metal structure in LIGA technology, and structure obtained |
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| US20100003623A1 (en) * | 2008-07-03 | 2010-01-07 | United Microelectronics Corp. | Method of patterning multiple photosensitive layers |
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