CN104659268A - Top-emitting white light organic light emitting device - Google Patents
Top-emitting white light organic light emitting device Download PDFInfo
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- CN104659268A CN104659268A CN201510029048.XA CN201510029048A CN104659268A CN 104659268 A CN104659268 A CN 104659268A CN 201510029048 A CN201510029048 A CN 201510029048A CN 104659268 A CN104659268 A CN 104659268A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/155—Hole transporting layers comprising dopants
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/156—Hole transporting layers comprising a multilayered structure
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- H—ELECTRICITY
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- H10K50/17—Carrier injection layers
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Abstract
The invention belongs to the field of organic light emitting devices, and particularly relates to a top-emitting white light organic light emitting device containing two or more light emitting layers. The top-emitting white light organic light emitting device adopting a forward-mounted structure is used as a research object, and a spectrum adjustment layer with hole injection and transmission functions is used as an adjustment object; by selection of a material and control of the material thickness, the top-emitting white light organic light emitting device has a specific optical thickness; by adjustment of the optical thickness of the spectrum adjustment layer and limitation to the light emitting layers and other functional layers, the top-emitting white light organic light emitting device adopting the forward-mounted structure is higher in spectral characteristic and efficiency performance.
Description
Technical Field
The invention belongs to the field of organic electroluminescent devices, and particularly relates to a top-emission white-light organic electroluminescent device.
Background
The electroluminescence phenomenon was originally discovered in the thirties of the 20 th century, and the initial luminescent material was ZnS powder, so LED technology was developed and now widely applied to energy-saving light sources. The organic electroluminescence phenomenon is the earliest discovery of Pope et al in 1963, and the organic electroluminescence phenomenon shows that a single-layer crystal of anthracene can emit weak blue light under the driving of a voltage of more than 100V. Until 1987, Rooibos, Dengqing cloud, et al, from Kodak corporation, made organic fluorescent dyes into double-layer devices by vacuum evaporation, the external quantum efficiency reached 1% at a driving voltage less than 10V, so that organic electroluminescent materials and devices have the possibility of practicability, and the research on OLED materials and devices was greatly promoted.
Organic electroluminescent devices (OLEDs) have received much attention as a new generation of technology that can be applied to both display and illumination. In the display field, compared with an LCD (liquid crystal display), the OLED has the advantages of high response speed, wide viewing angle, no need of a backlight source, high contrast, high resolution and the like; in the field of lighting, OLEDs also have many advantages such as presenting a continuous spectrum, high color rendering index, being more energy efficient and environmentally friendly, compared to LEDs (light emitting diodes).
Existing OLEDs are divided into bottom-emitting devices and top-emitting devices according to structure. In the OLED of the bottom emission device structure, light emitted from the substrate side is affected by the TFT array on the substrate, so the aperture ratio of the bottom emission display device is generally low. The OLED of the top-emitting device structure emits light from one side above the substrate, and is not affected by the TFT array on the substrate, so the aperture ratio of the top-emitting display device is generally high, and theoretically can even reach 100%. Therefore, the OLED of the top-emitting device structure has considerable advantages in performance, but the corresponding device structure design thereof also has considerable difficulties.
The existing top emission device structure is a microcavity structure, and due to the existence of the microcavity effect, the spectral dominant wavelength, the spectral width, the color coordinate, the color rendering index, the efficiency and the brightness of the device can be changed along with the existence of the microcavity effect. For monochromatic top-emitting devices, a stronger microcavity effect is desirable because it is with the microcavity effect that higher efficiency and higher color saturation can be achieved. However, for a white top-emitting device, it is desirable that the microcavity effect be as weak as possible, particularly for a white device with more than two light-emitting layers.
In the prior art, many researches have been made to improve the influence of the microcavity effect on the spectrum of the top-emitting device. For example, chinese patent CN101359721A discloses a scheme for adjusting the spectrum of a top-emitting device by a spectrum adjusting layer. The spectrum adjusting layer is a doped electron injection layer or/and a cathode buffer layer in an upright structure or a hole injection layer or/and an anode buffer layer in an inverted structure, and the light-emitting layer involved in the scheme is a single-layer light-emitting layer. The scheme adjusts the spectrum originally emitting single wavelength in the bottom emitting device into the spectrum of two wavelengths, thereby realizing white light, wherein one of the two wavelengths in the spectrum is the intrinsic wavelength emitted by the light emitting layer, and the spectrum in the other long wave direction is the resonance wavelength. Although it is possible to achieve white light by tuning the spectrum of a single light-emitting layer, a single light-emitting layer can generally only use a blue light-emitting layer, which is a material recognized in the OLED art as having the lowest efficiency and the shortest lifetime compared to light-emitting layer materials of other colors. The efficiency of the device is also low, as the resonance wavelength and the eigen wavelength in the resulting spectrum are at different positions. Therefore, even if white light can be realized using this light emitting layer, the efficiency and lifetime of white light will be the worst, and the efficiency and chromaticity of white light will not satisfy the practical requirements at all. Therefore, how to reduce the influence of the microcavity effect on the spectrum of the multi-light-emitting-layer top-emission white light device and how to adjust the microcavity to make the resonance spectrum emitted by the top-emission white light device the same as the intrinsic spectrum emitted by the light-emitting layer, thereby achieving higher efficiency is a technical problem to be solved in the art.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to provide a top emission white organic electroluminescent device, which has more reasonable spectral performance and shows excellent efficiency advantages, in view of the influence of the microcavity effect on the spectrum and thus the influence on the performance of the top emission white organic electroluminescent device in the prior art.
The invention provides a top-emission white light organic electroluminescent device which sequentially comprises a substrate, a reflecting anode, a spectrum adjusting layer, a light emitting layer, an electron transmission layer, an electron injection layer, a transparent cathode and a light coupling-out layer from bottom to top;
the light-emitting layer includes at least a first light-emitting layer and a second light-emitting layer;
the spectrum adjusting layer is made of a material with a hole injection and transmission effect, so that the spectrum adjusting layer has the hole injection and transmission effect;
the optical thickness of the spectrum adjusting layer is 30nm-100 nm;
the optical thickness of the luminescent layer is 25nm-80 nm;
the total optical thickness of the electron transport layer and the electron injection layer is 30nm-100 nm;
the optical thickness is the product of the physical thickness of the film layer and the refractive index coefficient of the material for preparing the film layer;
the spectrum wavelength emitted by the top emission white light organic electroluminescent device is the same as the intrinsic spectrum wavelength emitted by the light emitting layer.
Preferably, the optical thickness of the spectrum adjusting layer is 40nm to 70 nm.
Further, the physical thickness of the spectrum adjusting layer is 10nm-70 nm;
the material for preparing the spectrum adjusting layer is selected from materials with the refractive index of 1.4< n <2.4 and the extinction coefficient of 0-0 < k <0.2 under the wavelength of 400-700 nm.
Preferably, the material for preparing the spectrum adjusting layer is a material with a hole injection transport effect known in the prior art, that is, a material for preparing the hole injection layer and/or the hole transport layer known in the prior art, and specifically may be selected from one or a mixture of several thiophene derivatives, benzothiophene derivatives, indole derivatives, biphenyldiamine derivatives, triarylamine derivatives, dibenzofurans, benzophenanthrene derivatives, and carbazole derivatives.
More preferably, the material for preparing the spectrum adjusting layer comprises a material represented by the following general formula (C):
wherein m and n are independent integers of 0-3, and m + n is more than 0 and less than or equal to 3;
R1、R2independently of each other, is selected from one of substituted or unsubstituted arylamine groups of C4-C40, substituted or unsubstituted carbazole groups of C4-C40, substituted or unsubstituted benzothiophene groups of C4-C40, substituted or unsubstituted benzofuran groups of C4-C40;
l is a bridging group and is selected from a single bond, substituted arylamine of C4-C40, substituted carbazole of C4-C40, substituted benzothiophene of C4-C40, oxygen atom, nitrogen atom or sulfur atom;
R3-R10independently from each other, is selected from H atoms, aliphatic linear chain or branched chain alkyl of C1-C20 or aromatic group of C6-C30, or two adjacent groups are connected to form a ring to form the naphthothiophene derivative.
Further, the material for preparing the spectrum adjusting layer is selected from the following materials:
wherein Ar is1-Ar21Independently of one another, is a substituted or unsubstituted aryl group having from C6 to C50;
L1-L9independently of one another, are substituted or unsubstituted C6-C50 arylene groups.
Preferably, the material for preparing the spectrum adjusting layer comprises:
further, the spectrum adjusting layer is one or more layers.
The organic electroluminescent device is suitable for devices with multiple luminescent centers, and the luminescent layer further comprises a third luminescent layer.
Spacing layers are independently arranged among the first light-emitting layer, the second light-emitting layer and the third light-emitting layer.
The first light-emitting layer, the second light-emitting layer and the third light-emitting layer are independent of each other and are blue light-emitting layers, green light-emitting layers or red light-emitting layers.
The first light-emitting layer, the second light-emitting layer and the third light-emitting layer are independent of each other and emit fluorescence light or phosphorescence light.
The substrate is glass, plastic, stainless steel or silicon chip.
The reflecting anode is an Ag layer, an Al layer, a Cr layer and a Mo layer; or a double-layer or multi-layer structure of an Ag layer, an Al layer, a Cr layer, a Mo layer and ITO.
The transparent cathode is an Ag layer, an Al layer, or a Mg and Ag doped layer, and then an Ag layer is added.
The top-emission white-light organic electroluminescent device strives to enable the top-emission white-light organic electroluminescent device to have spectral performance close to that of a bottom-emission structure device, and meanwhile, the efficiency advantage of the top-emission device is kept. The top-emitting white light organic electroluminescent device is particularly suitable for adjusting the performance of top-emitting white light OLED devices with double light-emitting centers and three light-emitting centers, and is more beneficial to improving the color rendering index.
The top-emission white-light organic electroluminescent device takes a top-emission white-light organic electroluminescent device with a positive structure as a research object, takes a spectrum adjusting layer with the functions of hole injection and transmission as an adjusting object, and has specific optical thickness through the selection of materials and the control of material thickness; so that the top-emission white organic electroluminescent device shows better spectral characteristics and efficiency performance.
According to the top emission white light organic electroluminescent device, the thickness of the spectrum adjusting layer is controlled, and the luminescent layer and other functional layers are limited, so that the spectrum performance of the bottom emission organic electroluminescent device is achieved, the efficiency of the top emission device is maintained, and the top emission white light organic electroluminescent device has more comprehensive performance advantages. This is because the spectrum emitted by the top-emitting white light device and the intrinsic spectrum emitted by the bottom-emitting white light device are in the same position by the definition of the present invention, so that a better spectral characteristic is achieved while a higher efficiency is achieved.
Drawings
In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the embodiments of the present disclosure taken in conjunction with the accompanying drawings, in which
FIG. 1 is a schematic structural diagram of a top-emitting white light organic electroluminescent device of the front-mounted structure according to the present invention;
FIG. 2 is a graph showing electroluminescence spectra of a bottom emission white light device D1 and top emission white light devices 1-2 and 1-4 in example 1; in the figure, 1 is a blue light emission peak, 2 is a green light emission peak, and 3 is a red light emission peak.
Detailed Description
In view of the excellent performance exhibited by the bottom emission organic electroluminescent device in terms of spectral width, the technical effects of the following embodiments of the present invention are preferably aimed at achieving a spectral width similar to that of the bottom emission organic electroluminescent device.
The materials used in the following device structures of the present invention include:
example 1
As shown in fig. 1, the top emission white organic electroluminescent device with the front-mounted structure according to the present invention sequentially includes, from bottom to top, a substrate 100, a reflective anode 101, a spectrum adjustment layer 102, a first light emitting layer 103, a second light emitting layer 104, a third light emitting layer 105, an electron transport layer 106, an electron injection layer 107, a semitransparent cathode 108, and a light coupling-out layer 109. Wherein,
the substrate is glass; the reflective anode is an Ag layer; the semitransparent cathode is a Mg and Ag doped layer, and an Ag layer is added behind the semitransparent cathode. The electron transport layer isBphenAnd the electron injection layer is LiF. The light-emitting materials of the first light-emitting layer, the second light-emitting layer and the third light-emitting layer are respectively host-1 doped RD-1, host-2 doped GD-1 and BH-1 doped BD-1, the corresponding doping concentrations are respectively 5 wt%, 15 wt% and 5 wt%, the physical thicknesses of the first light-emitting layer, the second light-emitting layer and the third light-emitting layer are respectively controlled to be 5nm, 5nm and 15nm, and the total optical thickness of the light-emitting layers is 25-80 nm. The first light-emitting layer, the second light-emitting layer and the third light-emitting layer are respectively a red light-emitting layer, a green light-emitting layer and a blue light-emitting layer. The first light-emitting layer and the second light-emitting layer are phosphorescent light-emitting, and the third light-emitting layer is fluorescent light-emitting.
The spectrum adjusting layer is made of compounds 1-6 with hole injection function and compounds 1-7 with hole transmission function, wherein the refractive index of the compounds 1-6 is 1.6(550nm), and the refractive index of the compounds 1-7 is 1.65(550 nm); the spectrum adjusting layer is a double-layer structure formed by compounds 1-6 and compounds 1-7, the physical thicknesses of the spectrum adjusting layer in the following devices 1-1, 1-2 and 1-3 are respectively controlled to be compounds 1-6(6 nm)/compounds 1-7(12nm), compounds 1-6(15.6 nm)/compounds 1-7(15nm) and compounds 1-6(43 nm)/compounds 1-7(18nm), so that the optical thicknesses of the spectrum adjusting layer in each device are respectively 30nm, 50nm and 100 nm.
The organic electroluminescent device described in this example was prepared as follows:
1. cleaning the glass substrate by using a boiling detergent ultrasonic and deionized water ultrasonic method, and drying the glass substrate under an infrared lamp;
2. placing the substrate in a vacuum chamber, and vacuumizing to 1 × 10－5Pa, evaporating and plating an Ag layer on the glass as a reflecting anode, wherein the film thickness is 150 nm;
3. the glass substrate with the reflecting anode is continuously arranged in a vacuum chamber with the vacuum degree of 1 multiplied by 10－5A spectrum adjusting layer is evaporated on the reflecting anode layer film under the condition of Pa, the speed is 0.1nm/s, and the thickness of the evaporated film is determined according to the thickness determined in the embodiment and the comparative example;
4. then evaporating a luminous layer 1, a luminous layer 2 and a luminous layer 3, wherein each luminous layer adopts a double-source co-evaporation method, the speed is 0.1nm/s, and the thickness and the concentration of the evaporated film are determined according to the thickness and the concentration determined in the examples and the comparative examples;
5. then evaporating an electron transport layer, wherein the evaporation rate is 0.2nm/s, and the thickness of the evaporated film is determined according to the thicknesses determined in the embodiment and the comparative example;
6. then continuously evaporating a LiF layer on the electron transport layer, wherein the evaporation rate is 0.01-0.02 nm/s, and the thickness is 0.5 nm;
7. then, a semitransparent cathode is evaporated on the above layer, Mg is doped with Ag, the ratio of 4 to 1 is larger, the total thickness is 5nm, and then a layer of Ag is evaporated, the thickness is 12nm, and the evaporation rate is 0.1 nm/S. In the case of a bottom-emitting device, Al is evaporated on the cathode to a thickness of 150 nm.
The present embodiment is exemplified by a three-emission center top emission white light device, in which,
the device structures of the devices 1-1, 1-2, 1-3 are: glass/Ag (150 nm)/compound 1-6/compound 1-7/luminescent layer 1-1(5 nm)/luminescent layer 1-2(5 nm)/luminescent layer 1-3(15nm)/Bphen (20nm)/LiF (0.5nm)/Mg: Ag (4nm:1nm)/Ag (12nm)/CPL (40 nm).
The device structures of the devices 1-4, 1-5 are: glass/Ag (150 nm)/compound 1-6/compound 1-7/luminescent layer 1-1(5 nm)/luminescent layer 1-2(5 nm)/luminescent layer 1-3(15nm)/Bphen (20nm)/LiF (0.5nm)/Mg: Ag (4nm:1nm)/Ag (12nm)/CPL (40 nm); the total optical thicknesses of compounds 1-6 and compounds 1-7 in devices 1-4 and 1-5, respectively, were controlled to 120nm and 20nm, respectively.
The device structure of the device D1 is a bottom emitting device: glass/ITO (150 nm)/compound 1-6(43 nm)/compound 1-7(18 nm)/luminescent layer 1-1(5 nm)/luminescent layer 1-2(5 nm)/luminescent layer 1-3(15nm)/Bphen (20nm)/LiF (0.5nm)/Al (150 nm).
The thickness in the above device structure is a physical thickness.
The performance of each device was tested and the test data are shown in Table 1 below, and the electroluminescence spectra of the bottom emission white light device D1 and the top emission white light devices 1-2 and 1-4 are shown in FIG. 2.
Table 1 example data for three luminescent center devices
The above data show that, for a top emission white light device with an upright structure of three light emission centers, when the optical thickness x of the spectrum adjustment layer is 30-100nm, the color coordinates of the top emission white light device are very close to the color coordinates of the bottom emission white light device, which indicates that the spectrum emitted by the top emission white light device is almost the same as the intrinsic spectrum emitted by the bottom emission white light device. Especially when the optical thickness thereof is 50nm, there is an advantage in efficiency of the device in addition to the color coordinate of the top emission white light device being close to that of the bottom emission device. When the optical thickness of the spectrum adjusting layer exceeds the range set by the application, the efficiency of the top-emission white light device is greatly reduced, the performance of the device is greatly in a disadvantage, and an extrinsic light-emitting peak appears in the spectrum. In the electroluminescence spectrum chart of fig. 2, the emission peak wavelength in the spectrum of the bottom emission device D1 is substantially the same as that in the spectrum of the devices 1 to 2 (the positions of the emission peaks shown in fig. 1, 2 and 3), while the emission spectrum wavelength of the devices 1 to 4 is different from that of the intrinsic spectrum, and an extrinsic emission peak (circled part in the figure) also appears because the optical thickness of the spectrum adjusting layer exceeds the thickness in the present application, the microcavity effect is strong, a resonant emission peak appears, and the spectrum is broadened, but the efficiency has been greatly reduced.
Example 2
The top emission white organic electroluminescent device of this embodiment is the same as that of embodiment 1, and is of an upright structure, and the difference is only that the top emission white organic electroluminescent device is of a double-light-emitting-center structure, that is, the top emission white organic electroluminescent device only includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer and the second light-emitting layer are a blue light-emitting layer and a yellow light-emitting layer respectively. The first light-emitting layer and the second light-emitting layer are both fluorescent light-emitting. The light-emitting materials of the first light-emitting layer and the second light-emitting layer are respectively BH-1 doped BD-1 and host-3 doped YD-1, the corresponding doping concentrations are respectively 5 wt% and 3 wt%, the physical thicknesses of the first light-emitting layer and the second light-emitting layer are respectively controlled to be 10nm and 20nm, and the total optical thickness of the light-emitting layers is enabled to be within the range of 25nm to 80 nm.
The spectrum adjusting layer is made of material compounds 1-9 with a hole injection effect and material compounds 1-11 with a hole transmission effect, wherein the refractive index of the compounds 1-9 is 1.71(470nm), and the refractive index of the compounds 1-11 is 1.62(470 nm); the spectrum adjusting layer is a double-layer structure formed by compounds 1-9 and compounds 1-11 respectively, and the physical thicknesses of the spectrum adjusting layer in the following devices 2-1, 2-2 and 2-3 are controlled respectively as shown in the following table, so that the optical total thicknesses of the spectrum adjusting layer are respectively 30nm, 50nm and 100 nm.
The method of manufacturing each device described in this example is also the same as in example 1.
The present embodiment is exemplified by a dual-emission center top-emission white light device, wherein,
the device structures of the devices 2-1, 2-2, 2-3 are: glass/Ag (150 nm)/compound 1-9/compound 1-11/light-emitting layer 2-1(10 nm)/light-emitting layer 2-2(20nm)/Bphen (20nm)/LiF (0.5)/Mg: Ag (4nm:1nm)/Ag (12nm)/CPL (40 nm).
The device structures of the devices 2-4, 2-5 are: glass/Ag (150 nm)/compound 1-9/compound 1-11/light-emitting layer 2-1(10 nm)/light-emitting layer 2-2(20nm)/Bphen (20nm)/LiF (0.5nm)/Mg: Ag (4nm:1nm)/Ag (12nm)/CPL (40 nm). Wherein the total optical thicknesses of the spectrum adjusting layers in the control periods 2-4 and 2-5 are respectively 130nm and 18 nm.
The device structure of the device D2 is a bottom emitting device: glass/ITO/Compound 1-9(14 nm)/Compound 1-11(16 nm)/luminescent layer 2-1(10 nm)/luminescent layer 2-2(20nm)/Bphen (20nm)/LiF (0.5nm)/Al (150 nm).
The thickness in the above device structure is a physical thickness.
The performance of each device is tested, and the test data is shown in table 2 below.
Table 2 example data for dual luminescence center devices
The above data show that, for a top emission white light device with an upright structure of dual emission centers, when the optical thickness x of the spectrum adjustment layer is 30-100nm, the color coordinates of the top emission white light device are very close to the color coordinates of the bottom emission white light device, which indicates that the spectrum emitted by the top emission white light device is almost the same as the intrinsic spectrum emitted by the bottom emission white light device. Especially when the optical thickness is 50nm, the color coordinate of the top emission white light device is close to that of the bottom emission device, and the efficiency of the device is also superior. When the optical thickness of the spectrum adjusting layer is not within the range set by the application, the efficiency of the top-emission white light device is greatly reduced, and the performance of the device is greatly at a disadvantage.
Example 3
The structure and the preparation method of the top emission white organic electroluminescent device in the embodiment are the same as those in the embodiment 2, and are all of a positive structure, and the difference is only that the spectrum adjusting layer is different.
In this embodiment, the spectrum adjusting layer is a single layer, or a double layer, a doped single layer structure, or a doped double layer structure, and the optical thickness of the spectrum adjusting layer is controlled to be 50 nm. The materials selected for the spectrum adjusting layer comprise compounds 1-18 or 1-20, the refractive indexes of the compounds 1-18 or 1-20 are all 1.59(470nm), and specific materials are selected from the following table 3.
The first light-emitting layer and the second light-emitting layer are respectively a blue light-emitting layer and a yellow light-emitting layer. The first light-emitting layer and the second light-emitting layer are both fluorescent light-emitting.
The present embodiment is exemplified by a dual-emission center top-emission white light device, wherein,
the device structures of the devices 3-1, 3-2, 3-3 and 3-4 are all as follows: glass/Ag (150 nm)/spectrum adjusting layer/luminous layer 3-1(10 nm)/luminous layer 3-2(20nm)/Bphen (20nm)/LiF (0.5nm)/Mg: Ag (4nm:1nm)/Ag (12nm))/CPL (40 nm); the individual components are distinguished only in that,
the spectrum adjusting layer of the device 3-1 is a single-layer structure of compounds 1-18;
the spectrum adjusting layer of the device 3-2 is a double-layer structure of a compound 1-18/a compound 1-20;
the spectrum adjusting layer of the device 3-3 is of a doped single-layer structure, namely a single-layer structure formed by doping compounds 1-20 with compounds 1-18, and the mass ratio of the compounds 1-18 to the compounds 1-20 is 2: 1;
the spectrum adjusting layer of the devices 3-4 is a doped double-layer structure, namely a compound 1-18 is doped with HAT (CN)6, and a compound 1-20 respectively form a double-layer structure, wherein the mass ratio of the compound 1-18 to the HAT (CN)6 is 100: 2.
The device structure of device D3 is: glass/ITO/Compound 1-18(31.5 nm)/luminescent layer 3-1(10 nm)/luminescent layer 3-2(20nm)/Bphen (20nm)/LiF (0.5nm)/Al (150 nm).
The performance of each device is tested, and the test data is shown in table 3 below.
Table 3 example data for dual luminescence center devices
The data shows that, for the top emission white light device with the upright structure of the dual-luminescence center, when the optical thickness x of the spectrum adjusting layer is 50nm, the spectrum adjusting layer may be of a single-layer structure or a double-layer structure, where one layer of the double-layer structure may be undoped and the other layer may be doped. The performance of the final display not only has the efficiency advantage of a top-emitting device, but also the spectral performance of the final display is close to the performance of a bottom-emitting device.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.
Claims (10)
1. A top-emitting white organic electroluminescent device, characterized by:
the device comprises a substrate, a reflecting anode, a spectrum adjusting layer, a luminescent layer, an electron transmission layer, an electron injection layer, a transparent cathode and an optical coupling-out layer from bottom to top in sequence;
the light-emitting layer includes at least a first light-emitting layer and a second light-emitting layer;
the spectrum adjusting layer is made of a material with a hole injection and transmission effect, so that the spectrum adjusting layer has the hole injection and transmission effect;
the optical thickness of the spectrum adjusting layer is 30nm-100 nm;
the optical thickness of the luminescent layer is 25nm-80 nm;
the total optical thickness of the electron transport layer and the electron injection layer is 30nm-100 nm;
the optical thickness is the product of the physical thickness of the film layer and the refractive index coefficient of the material for preparing the film layer;
the spectrum wavelength emitted by the top emission white light organic electroluminescent device is the same as the intrinsic spectrum wavelength emitted by the light emitting layer.
2. The top-emitting white organic electroluminescent device of claim 1,
the optical thickness of the spectrum adjusting layer is 40nm-70 nm.
3. The top-emitting white organic electroluminescent device according to claim 1 or 2,
the physical thickness of the spectrum adjusting layer is 10nm-70 nm;
the material for preparing the spectrum adjusting layer is selected from materials with the refractive index of 1.4< n <2.4 and the extinction coefficient of 0-0 < k <0.2 under the wavelength of 400-700 nm.
4. The top-emission white organic electroluminescent device according to any one of claims 1 to 3, wherein the material for preparing the spectrum adjustment layer is selected from one or more of thiophene derivatives, benzothiophene derivatives, indole derivatives, biphenyldiamine derivatives, triarylamine derivatives, dibenzofurans, benzophenanthrene derivatives, and carbazole derivatives.
5. The top-emission white organic electroluminescent device as claimed in claim 4, wherein the material for preparing the spectrum adjustment layer comprises a material represented by the following formula (C):
wherein m and n are independent integers of 0-3, and m + n is more than 0 and less than or equal to 3;
R1、R2independently of each other, is selected from one of substituted or unsubstituted arylamine groups of C4-C40, substituted or unsubstituted carbazole groups of C4-C40, substituted or unsubstituted benzothiophene groups of C4-C40, substituted or unsubstituted benzofuran groups of C4-C40;
l is a bridging group and is selected from a single bond, substituted arylamine of C4-C40, substituted carbazole of C4-C40, substituted benzothiophene of C4-C40, oxygen atom, nitrogen atom or sulfur atom;
R3-R10independently from each other, is selected from H atom, aliphatic straight-chain or branched-chain hydrocarbon group of C1-C20 or aromatic group of C6-C30, or two adjacent groups are connected to form a ring to form the naphthothiophene derivative.
6. The top-emission white organic electroluminescent device according to claim 4, wherein the material for preparing the spectrum adjustment layer is selected from materials having the following structures:
wherein Ar is1-Ar21Independently of one another, is a substituted or unsubstituted aryl group having from C6 to C50;
L1-L9independently of one another, are substituted or unsubstituted C6-C50 arylene groups.
7. The top-emission white organic electroluminescent device according to claim 5 or 6, wherein the material for preparing the spectrum adjustment layer comprises:
8. the top-emission white organic electroluminescent device according to any one of claims 1 to 7, wherein the spectrum-adjusting layer is one or more layers.
9. The top-emission white organic electroluminescent device according to any one of claims 1 to 8, wherein the light-emitting layer further comprises a third light-emitting layer.
10. The top-emission white organic electroluminescent device according to claim 9, wherein the first, second and third light-emitting layers are provided with a spacer layer therebetween independently of each other.
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