CN114883506A - Perovskite light emitting diode device, preparation method thereof and display device - Google Patents

Perovskite light emitting diode device, preparation method thereof and display device Download PDF

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CN114883506A
CN114883506A CN202210490509.3A CN202210490509A CN114883506A CN 114883506 A CN114883506 A CN 114883506A CN 202210490509 A CN202210490509 A CN 202210490509A CN 114883506 A CN114883506 A CN 114883506A
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layer
electrode
light emitting
perovskite light
emitting diode
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陈学彬
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/156—Hole transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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Abstract

The application discloses a perovskite light-emitting diode device, a preparation method thereof and a display device. The perovskite light emitting diode device comprises a first electrode layer, a second electrode layer and a perovskite light emitting layer arranged between the first electrode layer and the second electrode layer; a hole function layer is arranged between the first electrode layer and the perovskite luminous layer; the hole function layer comprises a first electrode modification layer and a second electrode modification layer; the second electrode modification layer is located on the first electrode layer and the first electrode modification layer. The perovskite light emitting diode device can improve the carbon electrode injection property through a double-layer injection structure, and the perovskite light emitting diode is high-efficient to emit light.

Description

Perovskite light emitting diode device, preparation method thereof and display device
Technical Field
The application relates to the technical field of display, in particular to a perovskite light-emitting diode device, a preparation method thereof and a display device.
Background
In recent years, the performance of light emitting diodes (pelds) prepared based on perovskite materials has approached that of mature OLED and QLED devices through composition optimization, interface modification, carrier transport layer optimization, and structural design, and the preparation of high-resolution perovskite optoelectronic devices using an ink jet printing method (IJP) is considered as a powerful application of pelds.
Carbon electrode materials based on Graphene (GP) and Carbon Nanotubes (CNT) have been widely noticed because of their potential application prospects in flexible devices, however, as electrode materials for perovskite optoelectronic devices, carbon material electrodes have problems of poor morphology of deposited films, poor interfacial properties in contact with perovskites, and the like, leading to a risk of poor carrier injection and transport properties. At present, additives are mainly used for modifying the carbon electrode, but the introduction of the additives can reduce the injection property of carriers and reduce the performance of devices.
Therefore, it is desirable to provide a perovskite light emitting diode device for improving the injection transport property of the carbon electrode to overcome the above technical problems.
Disclosure of Invention
It is an object of the present application to provide a perovskite light emitting diode device to solve the above-mentioned deficiencies of the prior art.
The embodiment of the application provides a perovskite light emitting diode device, which comprises a first electrode layer, a second electrode layer and a perovskite light emitting layer arranged between the first electrode layer and the second electrode layer; a hole function layer is arranged between the first electrode layer and the perovskite luminous layer; the hole function layer comprises a first electrode modification layer and a second electrode modification layer; the second electrode modification layer is located on the first electrode layer and the first electrode modification layer.
Optionally, in some embodiments of the present application, the material of the first electrode modification layer comprises graphdine.
Optionally, in some embodiments of the present application, the material of the second electrode modification layer includes a thiophene-based polymer and a graphdine.
Optionally, in some embodiments herein, the thiophene-based polymer has a chemical formula comprising formula (a) and formula (B):
Figure BDA0003628969550000021
wherein R is 1 、R 2 、R 3 Are each independently selected from C 6 H 11 、C 5 H 9 、C 4 H 7 In (1)One kind of the medicine.
Optionally, in some embodiments herein, the graphyne is selected from one or more of a-graphyne and γ -graphyne.
Optionally, in some embodiments of the present application, the material of the perovskite light-emitting layer comprises MAPbX 3 And/or CsPbX 3 Wherein X represents a halogen atom.
Optionally, in some embodiments herein, the halogen atom is independently selected from one of chlorine, bromine, and iodine.
Optionally, in some embodiments of the present application, the material of the first electrode layer includes one or more of Graphene (GP) and Carbon Nanotubes (CNT).
Optionally, in some embodiments of the present application, a material of the second electrode layer is a transparent conductive oxide.
Optionally, in some embodiments of the present application, the Transparent Conductive Oxide (TCO) is selected from one or more of ITO and IZO.
Optionally, in some embodiments of the present application, the thickness of the second electrode layer is 10 to 50 nm.
Optionally, in some embodiments of the present application, an electron functional layer is disposed between the perovskite light emitting layer and the cathode layer, the electron functional layer comprising an electron transport layer and/or an electron injection layer.
Optionally, in some embodiments of the present application, the material of the electron injection layer is selected from one or more of alkali metal oxide, alkaline earth metal oxide, alkali metal carbonate compound, alkaline earth metal carbonate compound, alkali metal fluoride, alkaline earth metal hydroxide, and alkali metal hydroxide.
Optionally, in some embodiments of the present application, the material of the electron injection layer is selected from ZnO, LiF, Liq, CaF 2 、MgF、NaF、KF、BaF 2 、CsF、CsOH、Cs 2 CO 3 And ZnMgO.
Correspondingly, the embodiment of the application also provides a preparation method of the perovskite light emitting diode device, which comprises the following steps:
providing a substrate base plate;
forming a second electrode layer on the substrate base plate;
forming a perovskite light emitting layer on the second electrode layer;
forming a first electrode modification layer on the perovskite light emitting layer;
forming a second electrode modification layer on the first electrode modification layer;
and forming a first electrode layer on the second electrode modification layer.
Optionally, in some embodiments of the present application, a first electrode modification layer is formed on the perovskite light-emitting layer using a graphdyne ink.
Optionally, in some embodiments of the present application, a second electrode modification layer is formed on the first electrode modification layer using an ink containing a thiophene-based polymer and a graphdine. The preparation of the ink containing the thiophene polymer and the graphdine comprises the following steps: and blending the thiophene polymer and the graphite alkyne powder, adding a solvent, and fully dispersing a solute in an ultrasonic and stirring manner to prepare the ink.
Optionally, in some embodiments herein, the thiophene-based polymer has a chemical formula comprising formula (a) and formula (B):
Figure BDA0003628969550000031
wherein R is 1 、R 2 、R 3 Are each independently selected from C 6 H 11 、C 5 H 9 、C 4 H 7 One kind of (1).
Optionally, in some embodiments herein, the graphyne is selected from one or more of a-graphyne and γ -graphyne.
Optionally, in some embodiments of the present application, the material of the perovskite light-emitting layer comprises MAPbX 3 And/or CsPbX 3 Wherein X represents a halogen atom.
Optionally, in some embodiments of the present application, the material of the first electrode layer includes one or more of graphene and carbon nanotubes.
Optionally, in some embodiments of the present application, a material of the second electrode layer is a transparent conductive oxide. The transparent conductive oxide is selected from one or more of ITO and IZO. The thickness of the second electrode layer is 10-50 nm.
Optionally, in some embodiments of the present application, an electronically functional layer is disposed between the perovskite light emitting layer and the cathode layer. The electron function layer comprises an electron transport layer and/or an electron injection layer.
Optionally, in some embodiments of the present application, the material of the electron injection layer is selected from one or more of alkali metal oxide, alkaline earth metal oxide, alkali metal carbonate compound, alkaline earth metal carbonate compound, alkali metal fluoride, alkaline earth metal hydroxide, and alkali metal hydroxide.
Furthermore, embodiments of the present application also provide a display device including the perovskite light emitting diode device as described above.
The beneficial effect of this application:
the perovskite light emitting diode device provided by the application promotes the carbon electrode injectivity through the double-layer injection structure, and realizes the high-efficiency light emitting of the perovskite light emitting diode. The method can realize gradient hole injection by controlling the proportion of thiophene and thiophene condensed rings in the copolymer and regulating and controlling the doping ratio of the copolymer and the graphite alkyne, improve the hole injection efficiency of the device and enable the device to achieve the optimal luminous efficiency. Meanwhile, the modification layer can improve the injection transmission property of the carbon electrode and improve the efficiency and stability of the device.
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In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a perovskite light emitting diode device provided in an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. In addition, in the description of the present application, the term "including" means "including but not limited to". The terms first, second, third and the like are used merely as labels, and do not impose numerical requirements or an established order. Various embodiments of the invention may exist in a range of versions; it is to be understood that the description in the form of a range is merely for convenience and brevity and should not be construed as an inflexible limitation on the scope of the invention; accordingly, the described range descriptions should be considered to have specifically disclosed all the possible sub-ranges as well as individual numerical values within that range. For example, it is contemplated that the description of a range from 1 to 6 has specifically disclosed sub-ranges such as, for example, from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as individual numbers within a range such as, for example, 1, 2, 3, 4, 5, and 6, as applicable regardless of the range. In addition, whenever a numerical range is indicated herein, it is meant to include any number (fractional or integer) recited within the indicated range.
In the process of research and practice of the prior art, the inventors of the present application found that thiophene organic compounds have excellent performance characteristics as CNT electrode modification layers. On one hand, the thiophene compound can improve the stacking property of the carbon nano tube, so that the carbon nano tube has stronger pi-pi interaction; the Graphyne (GD) has the characteristic of high conductivity as a novel two-dimensional semiconductor material, and after being blended with the thiophene polymer, the thiophene polymer-Graphyne (GD) has the characteristic of adjustable HOMO due to pi-pi interaction between the Graphyne (GD) and the thiophene polymer, and is beneficial to improving the hole injection performance of a device. On the other hand, the thiophene compound can effectively prevent electrons from entering a Carbon Nano Tube (CNT) electrode, and unnecessary carrier recombination is reduced. Moreover, the inventor finds that the hydrophobic property of the thiophene compound modification layer can prevent water vapor from invading, and the stability of the perovskite device is improved. The energy level of molecules can be regulated and controlled by regulating the conjugated length of thiophene, so that the performance of the material can be further regulated and controlled.
The embodiment of the application provides a perovskite light-emitting diode device, a preparation method thereof and a display device. The following are detailed below. It should be noted that the following description of the embodiments is not intended to limit the preferred order of the embodiments.
Referring to fig. 1, a perovskite light emitting diode device 100 includes a first electrode layer 110, a hole function layer 120, a perovskite light emitting layer 130, and a second electrode layer 150. Further, an electron functional layer 140 may be disposed between the perovskite light emitting layer 130 and the second electrode layer 150. Also, the electron function layer 140 may be an electron transport layer and/or an electron injection layer.
Further, the hole function layer 120 includes a first electrode modification layer 121 and a second electrode modification layer 122. The second electrode modification layer 122 is located between the first electrode layer 110 and the first electrode modification layer 121. The hole function layer 120 may include a hole injection layer, and the first electrode modification layer 121 and the second electrode modification layer 122 may be used together as a structure of the hole injection layer.
In this embodiment, the material of the first electrode modification layer 121 includes graphdyne. The material of the second electrode modification layer 122 includes a thiophene polymer and Graphyne (GD). The method can realize effective regulation of the hole injection and transmission capability of the organic-graphite alkyne by regulating and controlling the blending ratio of the polymer and the graphite alkyne. Still further, the grapliine is selected from one or more of alpha-grapliine and gamma-grapliine.
Further, the first electrode layer 110 is a carbon electrode. The material of the carbon electrode includes one or more of Graphene (GP) and Carbon Nanotubes (CNT).
According to the perovskite light emitting diode device, the double-layer electrode modification layer structure is adopted as a hole injection structure, the carbon electrode injection property can be effectively improved by modifying the electrode structure of the carbon electrode, and the stability of the device can be improved.
In the device according to the embodiment of the present application, the first electrode layer 110, the hole function layer 120, the perovskite light emitting layer 130, the electron function layer 140, and the second electrode layer 150 are sequentially stacked on the substrate.
In one embodiment, the second electrode layer 150 is formed on a substrate, the electronic function layer 140 is formed on a side of the second electrode layer 150 facing away from the substrate, the perovskite luminescent layer 130 is formed on a side of the electronic function layer 140 facing away from the second electrode layer 150, the hole function layer 120 is formed on a side of the perovskite luminescent layer 130 facing away from the electronic function layer 140, and the first electrode layer 110 is formed on a side of the hole function layer 120 facing away from the perovskite luminescent layer 130. Further, since the hole function layer 120 includes the first electrode modification layer 121 and the second electrode modification layer 122, in the preparation process, the first electrode modification layer 121 is formed on the side of the perovskite light emitting layer 130 away from the electronic function layer 140, and then the second electrode modification layer 122 is formed on the side of the first electrode modification layer 121 away from the perovskite light emitting layer 130.
In another embodiment, a first electrode layer 110 is formed on a substrate, a hole function layer 120 is formed on a side of the first electrode layer 110 facing away from the substrate, a perovskite light emitting layer 130 is formed on a side of the hole function layer 120 facing away from the first electrode layer 110, an electron function layer 140 is formed on a side of the perovskite light emitting layer 130 facing away from the hole function layer 120, and a second electrode layer 150 is formed on a side of the electron function layer 140 facing away from the perovskite light emitting layer 130. Similarly, since the hole function layer 120 includes the first electrode modification layer 121 and the second electrode modification layer 122, in the preparation process, the second electrode modification layer 122 is formed on the side of the first electrode layer 110 away from the substrate, and then the first electrode modification layer 121 is formed on the side of the second electrode modification layer 122 away from the first electrode layer 110.
In some embodiments herein, the thiophene-based polymer has a chemical formula comprising formula (a) and formula (B):
Figure BDA0003628969550000071
wherein, is the attachment site.
Further, R 1 、R 2 、R 3 Independently selected from but not limited to butyl (C) 4 H 7 ) Pentyl group (C) 5 H 9 ) And hexyl (C) 6 H 11 ) One kind of (1). It can be seen that the 3-position of the thiophene polymer is an alkyl chain, such as R 1 、R 2 、R 3 . Alkyl chain (R) 1 、R 2 、R 3 ) Has the capability of regulating and controlling the molecular energy level, the injectability and the physical parameters of the ink of the polymer.
In the examples of the present application, with an alkyl chain (R) 1 、R 2 、R 3 ) The HOMO of the thiophene polymer gradually decreases with increasing group length. Therefore, the injection transmission property of the carbon nano tube electrode can be effectively improved, the stability of a device is improved, and the adjustability of the injection property of the electrode can be realized. In the embodiment of the application, the energy level and the optical property of the second electrode modification layer can be changed by regulating and controlling the ratio of the thiophene and the thiophene condensed ring.
It can be seen that, in the thiophene polymer, the formula (a) is a structure of a thiophene ring, and the formula (B) is a structure of a thiophene condensed ring, and the energy level and the optical properties of the modification layer can be changed by controlling the ratio of the thiophene ring to the thiophene condensed ring. In practical applications, the number ratio, such as molar ratio, of the thiophene ring structures to the thiophene fused ring structures can be selected according to the required energy level and optical properties.
Further, the number of structures represented by the formula (A) in the thiophene-based polymer and the number of structures represented by the formula (B) in the thiophene-based polymer may be any ratio.
For exampleThe thiophene polymer has a chemical formula comprising:
Figure BDA0003628969550000081
wherein R is 1 、R 2 、R 3 Are each independently selected from C 6 H 11 、C 5 H 9 、C 4 H 7 One kind of (1). In the thiophene polymer, a represents the number of thiophene rings, and b represents the number of thiophene condensed rings, so that the energy levels and optical properties of the thiophene polymer and the modification layer can be changed by regulating the ratio of the thiophene rings to the thiophene condensed rings.
For example, the thiophene polymer may have a chemical formula that includes the structure shown below:
Figure BDA0003628969550000082
in some embodiments of the present application, the material of the perovskite light-emitting layer 130 comprises MAPbX 3 And/or CsPbX 3 Wherein X represents a halogen atom. Further, the halogen atom is independently selected from any one of chlorine (Cl), bromine (Br), and iodine (I).
In some embodiments of the present application, the material of the second electrode layer 150 is a transparent conductive oxide. Further, the Transparent Conductive Oxide (TCO) is selected from one or more of Indium Tin Oxide (ITO) and Indium Zinc Oxide (IZO).
In some embodiments of the present application, the second electrode layer 150 may have a thickness of 10nm, 15nm, 20nm, 25nm, 30nm, 35nm, 40nm, 45nm, or 50 nm.
In some embodiments of the present application, an electron functional layer is disposed between the perovskite light emitting layer 130 and the cathode layer, the electron functional layer comprising an electron transport layer and/or an electron injection layer.
In some embodiments of the present application, a material of the Electron Injection Layer (EIL) may be an inorganic material having a lower vacuum level or an organic material having a lower LUMO, or an organic doping material. Further, the electricityThe material of the sub-injection layer is selected from one or more of alkali metal oxide, alkaline earth metal oxide, alkali metal carbonate compound, alkaline earth metal carbonate compound, alkali metal fluoride, alkaline earth metal hydroxide and alkali metal hydroxide. For example, the material of the electron injection layer is selected from ZnO, LiF, Liq, CaF 2 、MgF、NaF、KF、BaF 2 、CsF、CsOH、Cs 2 CO 3 And ZnMgO.
According to the application, the energy level and the optical property of the organic layer are changed by regulating and controlling the ratio of thiophene and thiophene condensed rings; by regulating and controlling the blending ratio of the thiophene polymer and the graphdiyne, the hole injection and transmission capability of the thiophene polymer-graphdiyne layer can be effectively regulated. The adjustable ink property and the carrier balance injection of the device are realized through the regulation and control of the two modes.
The embodiment of the application also provides a preparation method of the perovskite light-emitting diode device, which is used for preparing the perovskite light-emitting diode device. The perovskite light emitting diode device can be an upright device or an inverted device.
In some embodiments of the present application, a method of fabricating a perovskite light emitting diode device includes the steps of:
providing a substrate base plate;
forming a second electrode layer on the substrate base plate;
forming a perovskite light emitting layer on the second electrode layer;
forming a first electrode modification layer on the perovskite light-emitting layer;
forming a second electrode modification layer on the first electrode modification layer;
and forming a first electrode layer on the second electrode modification layer.
With continued reference to fig. 1, a method for fabricating the perovskite light emitting diode device includes the steps of:
providing a substrate base plate;
forming a second electrode layer 150 on the substrate;
forming an electron function layer 140 on the second electrode layer 150;
forming a perovskite light emitting layer 130 on the electron function layer 140;
forming a first electrode modification layer 121 on the perovskite light emitting layer 130;
forming a second electrode modification layer 122 on the first electrode modification layer 121;
the first electrode layer 110 is formed on the second electrode modification layer 122.
Further, a first electrode modification layer 121 is formed on the perovskite luminescent layer 130 using a graphdiyne ink. A second electrode modification layer 122 is formed on the first electrode modification layer 121 using an ink containing a thiophene polymer and a graphyne.
Further, the electron function layer 140 includes an electron transport layer and/or an electron injection layer.
Furthermore, the first electrode layer, the electron injection layer, the perovskite light emitting layer, the first electrode modification layer, the second electrode layer and the like in the perovskite light emitting diode device can be manufactured in an ink-jet printing mode.
In one embodiment, the method for manufacturing the perovskite light emitting diode device comprises the following steps:
providing a substrate, and forming a layer of transparent electrode on the substrate, namely forming a cathode layer;
printing an Electron Injection Layer (EIL) on the cathode layer by ink-jet printing;
printing a perovskite active layer, namely a perovskite luminous layer, on the electron injection layer by ink jet;
printing an organic-graphite alkyne electrode modification layer, namely a first electrode modification layer, on the perovskite luminescent layer by adopting graphite alkyne ink through ink jet;
printing a second electrode modification layer on the first electrode modification layer by adopting ink containing thiophene polymers and graphite alkyne; wherein the preparation of the ink containing the thiophene polymer and the graphdine comprises the following steps: blending a thiophene polymer and graphite alkyne powder, adding a solvent such as dichlorobenzene and the like, fully dispersing a solute in an ultrasonic and stirring manner, and preparing to obtain printing ink;
and printing a CNT electrode on the second electrode modification layer by ink jet to form an anode layer.
In some embodiments of the present application, the step of preparing the second electrode modification layer includes: mixing a thiophene polymer, graphite alkyne and a solvent, stirring, and preparing to obtain printing ink; and then carrying out ink-jet printing by using the printing ink, carrying out vacuum drying to form a film, and annealing (heating) to prepare the second electrode modification layer. Further, agitation may be used both ultrasonically and in agitation to sufficiently disperse the solute to configure the printed ink. Dichlorobenzene may be used as the solvent.
For example, the perovskite light emitting diode device is a bottom-emission ink-jet printing perovskite light emitting diode device structure, and the device bottom-up hierarchical structure can comprise: the device comprises a transparent electrode substrate (TCO substrate), an Electron Injection Layer (EIL), a perovskite luminescent layer, a hole functional layer and a carbon electrode, wherein the light-emitting direction of the device is bottom-emitting light-emitting. Wherein, the transparent electrode (TCO) is manufactured by sputtering/coating photoresist/exposing/developing/striper process; a Hole Injection Layer (HIL), a perovskite luminescent layer and an Electron Injection Layer (EIL) are manufactured by an ink-jet printing method; the carbon electrode is manufactured by solution processing process technologies such as printing and/or spin coating; and a hole functional layer, namely preparing a layer of graphite alkyne ink and printing the graphite alkyne ink on the perovskite layer, and printing the thiophene polymer-graphite alkyne ink on the graphite alkyne layer.
In the examples of the present application, the chemical formula of the thiophene polymer includes formula (a) and formula (B):
Figure BDA0003628969550000111
wherein R is 1 、R 2 、R 3 Are each independently selected from C 6 H 11 、C 5 H 9 、C 4 H 7 One kind of (1). The structure of the thiophene polymer is described in detail above.
The above-mentionedThe graphathpane is selected from one or more of alpha-graphathpane and gamma-graphathpane. The material of the perovskite luminous layer comprises MAPbX 3 And/or CsPbX 3 Wherein X represents a halogen atom.
The material of the first electrode layer includes one or more of graphene and carbon nanotubes. The material of the second electrode layer is transparent conductive oxide. The transparent conductive oxide is selected from one or more of ITO and IZO. The thickness of the second electrode layer is 10-50 nm.
The material of the electron injection layer is selected from one or more of alkali metal oxide, alkaline earth metal oxide, alkali metal carbonate compound, alkaline earth metal carbonate compound, alkali metal fluoride, alkaline earth metal hydroxide and alkali metal hydroxide.
Embodiments of the present application also provide a display device comprising a perovskite light emitting diode device as described above.
In conclusion, the perovskite light-emitting diode device uses the double-layer electrode modification layer, so that the carbon electrode has better injection capacity, the perovskite light-emitting diode can efficiently emit light, and the stability of the device can be improved. The application can be applied to related products such as perovskite displays.
In the foregoing embodiments, the descriptions of the respective embodiments have respective emphasis, and for parts that are not described in detail in a certain embodiment, reference may be made to related descriptions of other embodiments.
The perovskite light emitting diode device, the preparation method thereof and the display device provided by the embodiments of the present application are described in detail above, and the principles and embodiments of the present application are explained herein by applying specific examples, and the description of the above embodiments is only used to help understanding the method and the core concept of the present application; meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.

Claims (10)

1. A perovskite light emitting diode device comprising a first electrode layer, a second electrode layer, and a perovskite light emitting layer disposed between the first electrode layer and the second electrode layer; a hole function layer is arranged between the first electrode layer and the perovskite luminous layer; the hole function layer comprises a first electrode modification layer and a second electrode modification layer; the second electrode modification layer is located on the first electrode layer and the first electrode modification layer.
2. The perovskite light emitting diode device of claim 1, wherein the material of the first electrode modification layer comprises graphdine; the material of the second electrode modification layer comprises a thiophene polymer and graphyne.
3. The perovskite light emitting diode device of claim 2, wherein the thiophene-based polymer has a chemical formula comprising formula (a) and formula (B):
Figure FDA0003628969540000011
wherein R is 1 、R 2 、R 3 Are each independently selected from C 6 H 11 、C 5 H 9 、C 4 H 7 To (3) is provided.
4. The perovskite light emitting diode device of claim 2 or 3, wherein the grapliyne is selected from one or more of a-grapliyne and γ -grapliyne;
the material of the perovskite luminous layer comprises MAPbX 3 And/or CsPbX 3 Wherein X represents a halogen atom.
5. The perovskite light emitting diode device of claim 1, wherein the material of the first electrode layer comprises one or more of graphene and carbon nanotubes; and/or
The material of the second electrode layer is transparent conductive oxide; and/or
The thickness of the second electrode layer is 10-50 nm; and/or
An electronic function layer is arranged between the perovskite luminous layer and the cathode layer, and the electronic function layer comprises an electron transmission layer and/or an electron injection layer.
6. The perovskite light emitting diode device of claim 1, wherein the transparent conductive oxide is selected from one or more of ITO, IZO;
the material of the electron injection layer is selected from one or more of alkali metal oxide, alkaline earth metal oxide, alkali metal carbonate compound, alkaline earth metal carbonate compound, alkali metal fluoride, alkaline earth metal hydroxide and alkali metal hydroxide.
7. A method of making a perovskite light emitting diode device, comprising the steps of:
providing a substrate base plate;
forming a second electrode layer on the substrate;
forming a perovskite light emitting layer on the second electrode layer;
forming a first electrode modification layer on the perovskite light emitting layer;
forming a second electrode modification layer on the first electrode modification layer;
and forming a first electrode layer on the second electrode modification layer.
8. The method of making a perovskite light emitting diode device as claimed in claim 7 wherein a first electrode modification layer is formed on the perovskite light emitting layer using a graphite alkyne ink;
and forming a second electrode modification layer on the first electrode modification layer by adopting ink containing thiophene polymers and graphyne.
9. The method of making a perovskite light emitting diode device as claimed in claim 8, wherein the thiophene-based polymer has a chemical formula comprising formula (a) and formula (B):
Figure FDA0003628969540000021
wherein R is 1 、R 2 、R 3 Are each independently selected from C 6 H 11 、C 5 H 9 、C 4 H 7 One kind of (1).
10. A display device comprising the perovskite light emitting diode device as claimed in any one of claims 1 to 6.
CN202210490509.3A 2022-05-06 2022-05-06 Perovskite light emitting diode device, preparation method thereof and display device Pending CN114883506A (en)

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